Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Addresses: [Wan Xiao-Jia; Wang Xiao-Liang; Xiao Hong-Ling; Wang Cui-Mei; Feng Chun; Deng Qing-Wen; Qu Shen-Qi] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Wang Xiao-Liang] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China.

[Wang Xiao-Liang; Zhang Jing-Wen; Hou Xun] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Peoples R China.

[Cai Shu-Jun; Feng Zhi-Hong] Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China.

Reprint Address: Wang, XL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: xlwang@semi.ac.cn

ISSN: 0256-307X
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Record 285 of 495

Title: AlGaN/GaN/InGaN/GaN DH-HEMTs with GaN channel layer grown at high temperature

Author(s): Zhang, L (Zhang, Lu); Wang, XL (Wang, Xiaoliang); Xiao, HL (Xiao, Hongling); Chen, H (Chen, Hong); Feng, C (Feng, Chun); Shen, GD (Shen, Guangdi); Wang, ZG (Wang, Zhanguo); Hou, X (Hou, Xun)

Source: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS Volume: 62 Issue: 2 Article Number: DOI: 10.1051/epjap/2013120390 Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The AlGaN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) sample has been grown by MOCVD on (0 0 0 1) sapphire substrate. The structure features a 7 nm In0.046Ga0.954N interlayer determined by Rutherford backscattering (RBS). Since the polarization field in the InGaN interlayer is opposite to it in the AlGaN layer, an additional potential barrier is introduced between the two-dimensional electron gas (2DEG) channel and buffer, leading to enhanced carrier confinement and improved buffer isolation. The GaN layers between the AlGaN layer and InGaN interlayer are divided into two layers consisting of GaN channel layer which provides high mobility 2DEG grown at 1070 degrees C and GaN spacer layer grown at the same temperature as InGaN interlayer (800 degrees C) to prevent indium diffusion. RBS measurement confirms that the 3 nm GaN spacer layer isolates the InGaN interlayer well and free from diffusion. Hall measurement has been performed, the mobility as high as 1552 cm(2)/V s at room temperature is obtained and the sheet carrier density is 1.55 x 10(13) cm(-2). The average sheet resistance is 331 Omega/sq, respectively. The mobility obtained in this paper is about 20% higher than similar structures reported.

Addresses: [Zhang, Lu; Shen, Guangdi] Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100022, Peoples R China.

[Zhang, Lu; Wang, Xiaoliang; Xiao, Hongling; Chen, Hong; Feng, Chun; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang, Xiaoliang; Hou, Xun] Xi An Jiao Tong Univ, Xian 710049, Peoples R China.

Reprint Address: Zhang, L (reprint author), Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100022, Peoples R China.

E-mail Addresses: xlwang@semi.ac.cn

ISSN: 1286-0042

Record 286 of 495

Title: Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN

Author(s): Yin, CM (Yin, Chunming); Yuan, HT (Yuan, Hongtao); Wang, XQ (Wang, Xinqiang); Liu, ST (Liu, Shitao); Zhang, S (Zhang, Shan); Tang, N (Tang, Ning); Xu, FJ (Xu, Fujun); Chen, ZY (Chen, Zhuoyu); Shimotani, H (Shimotani, Hidekazu); Iwasa, Y (Iwasa, Yoshihiro); Chen, YH (Chen, Yonghai); Ge, WK (Ge, Weikun); Shen, B (Shen, Bo)

Source: NANO LETTERS Volume: 13 Issue: 5 Pages: 2024-2029 DOI: 10.1021/nl400153p Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Electrically manipulating electron spins based on Rashba spin-orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices.

Addresses: [Yin, Chunming; Wang, Xinqiang; Liu, Shitao; Zhang, Shan; Tang, Ning; Xu, Fujun; Shen, Bo] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China.

[Yuan, Hongtao; Chen, Zhuoyu; Shimotani, Hidekazu; Iwasa, Yoshihiro] Univ Tokyo, Quantum Phase Elect Ctr, Tokyo 1138656, Japan.

[Yuan, Hongtao; Chen, Zhuoyu; Shimotani, Hidekazu; Iwasa, Yoshihiro] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan.

[Chen, Yonghai] Chinese Acad Sci, Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Ge, Weikun] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

Reprint Address: Wang, XQ (reprint author), Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China.

E-mail Addresses: wangshi@pku.edu.cn; bshen@pku.edu.cn

ISSN: 1530-6984

Record 287 of 495

Title: Four distributed feedback laser array integrated with multimode-interference and semiconductor optical amplifier

Author(s): Ma, L (Ma Li); Zhu, HL (Zhu Hong-Liang); Liang, S (Liang Song); Zhao, LJ (Zhao Ling-Juan); Chen, MH (Chen Ming-Hua)

Source: CHINESE PHYSICS B Volume: 22 Issue: 5 Article Number: 054211 DOI: 10.1088/1674-1056/22/5/054211 Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Monolithic integration of four 1.55-mu m-range InGaAsP/InP distributed feedback (DFB) lasers using varied ridge width with a 4 x 1-multimode-interference (MMI) optical combiner and a semiconductor optical amplifier (SOA) is demonstrated. The average output power and the threshold current are 1.8 mW and 35 mA, respectively, when the injection current of the SOA is 100 mA, with a side mode suppression ratio (SMSR) exceeding 40 dB. The four channels have a 1-nm average channel spacing and can operate separately or simultaneously.

Addresses: [Ma Li; Zhu Hong-Liang; Liang Song; Zhao Ling-Juan] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Ma Li; Chen Ming-Hua] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China.

Reprint Address: Zhu, HL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: zhuhl@red.semi.ac.cn

ISSN: 1674-1056
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Record 288 of 495

Title: Optimized geometry and electronic structure of graphyne-like silicyne nanoribbons

Author(s): Pei, Y (Pei Yang); Wu, HB (Wu Hai-Bin)

Source: CHINESE PHYSICS B Volume: 22 Issue: 5 Article Number: 057303 DOI: 10.1088/1674-1056/22/5/057303 Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Silicyne, a silicon allotrope, which is closely related to silicene and has graphyne-like structure, is theoretically investigated in this work. Its optimized geometry and electronic band structure are calculated by means of the first-principles frozen-core projector-augmented wave method implemented in the Vienna ab initio simulation package (VASP). We find that the lattice parameter is 9.5 angstrom, the silicon chain between hexagons is composed of disilynic linkages (-Si equivalent to Si-) rather than cumulative linkages (=Si=Si=), and the binding energy is -3.41 eV per atom. The band structure is calculated by adopting the generalized gradient approximation and hybrid functionals. The band gap produced by the HSE06 functional is 0.73 eV, which is nearly triple that by the generalized gradient approximation of Perdew-Burke-Ernzerhof functional.

Addresses: [Pei Yang; Wu Hai-Bin] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Pei, Y (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: ypei@semi.ac.cn

ISSN: 1674-1056

Record 289 of 495

Title: The single-longitudinal-mode operation of a ridge waveguide laser based on two-dimensional photonic crystals

Author(s): Wang, HY (Wang Hua-Yong); Xu, XS (Xu Xing-Sheng)

Source: CHINESE PHYSICS B Volume: 22 Issue: 5 Article Number: 054205 DOI: 10.1088/1674-1056/22/5/054205 Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: An electrically driven, single-longitudinal-mode GaAs based photonic crystal (PC) ridge waveguide (RWG) laser emitting at around 850 nm is demonstrated. The single-longitudinal-mode lasing characteristic is achieved by introducing the PC to the RWG laser. The triangle PC is etched on both sides of the ridge by photolithography and inductive coupled plasma (ICP) etching. The lasing spectra of the RWG lasers with and without the PC are studied, and the result shows that the PC purifies the longitudinal mode. The power per facet versus current and current-voltage characteristics have also been studied and compared.

Addresses: [Wang Hua-Yong; Xu Xing-Sheng] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Xu, XS (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: xsxu@semi.ac.cn

ISSN: 1674-1056

Record 290 of 495

Title: High sensitivity Hall devices with AlSb/InAs quantum well structures

Author(s): Zhang, Y (Zhang Yang); Zhang, YW (Zhang Yu-Wei); Wang, CY (Wang Cheng-Yan); Guan, M (Guan Min); Cui, LJ (Cui Li-Jie); Li, YY (Li Yi-Yang); Wang, BQ (Wang Bao-Qiang); Zhu, ZP (Zhu Zhan-Ping); Zeng, YP (Zeng Yi-Ping)

Source: CHINESE PHYSICS B Volume: 22 Issue: 5 Article Number: 057106 DOI: 10.1088/1674-1056/22/5/057106 Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: AlSb/InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an InAs channel. It is found that electron mobility as high as 19050 cm(2).V-1.s(-1) has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the AlSb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films.

Addresses: [Zhang Yang] Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Zhang Yang; Zhang Yu-Wei; Wang Cheng-Yan; Guan Min; Cui Li-Jie; Li Yi-Yang; Wang Bao-Qiang; Zhu Zhan-Ping; Zeng Yi-Ping] Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhang, Y (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: zhang_yang@semi.ac.cn

ISSN: 1674-1056
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Record 291 of 495

Title: Multi-walled carbon nanotube as a saturable absorber for a passively mode-locked Nd:YVO4 laser

Author(s): Lin, XC (Lin, Xue Chun); Zhang, L (Zhang, Ling); Tsang, YH (Tsang, Yuen H.); Wang, YG (Wang, Yong Gang); Yu, HJ (Yu, Hai Juan); Yan, SL (Yan, Shi Lian); Sun, W (Sun, Wei); Yang, YY (Yang, Ying Ying); Han, ZH (Han, Zehua); Hou, W (Hou, Wei)

Source: LASER PHYSICS LETTERS Volume: 10 Issue: 5 Article Number: 055805 DOI: 10.1088/1612-2011/10/5/055805 Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Within the family of carbon nanotubes, multi-walled carbon nanotube material has the advantages of low-cost and high laser damage threshold. Therefore, in principle, it is more suitable for high power laser applications. In this letter, a high power continuous wave mode-locking Nd:YVO4 laser using a multi-walled carbon nanotube absorber has been successfully demonstrated. An average output power as high as 1.4 W has been achieved with a slope efficiency of 24%. The repetition rate and pulse width of the mode-locked laser were 68 MHz and 15.5 ps, respectively. The calculated pulse energy and peak power were 20.6 nJ and 1.33 kW, respectively.

Addresses: [Lin, Xue Chun; Zhang, Ling; Yu, Hai Juan; Yan, Shi Lian; Sun, Wei; Yang, Ying Ying; Han, Zehua; Hou, Wei] Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing 100083, Peoples R China.

[Tsang, Yuen H.] HongKong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China.

[Tsang, Yuen H.] HongKong Polytech Univ, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China.

[Wang, Yong Gang] Chinese Acad Sci, Xian Inst Opt & Precis Mech, China State Key Lab Transient Opt & Photon, Xian, Peoples R China.

Reprint Address: Lin, XC (reprint author), Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing 100083, Peoples R China.

E-mail Addresses: Yuen.Tsang@polyu.edu.hk; chinawygxjw@opt.ac.cn

ISSN: 1612-2011
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Record 292 of 495

Title: Improvement of the surface quality of semi-insulating InP substrates through a novel etching and cleaning method

Author(s): Liu, JM (Liu, Jingming); Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Yang, FY (Yang, Fengyun); Wang, FH (Wang, Fenghua); Cao, KW (Cao, Kewei); Liu, T (Liu, Tong); Xie, H (Xie, Hui); Chen, T (Chen, Teng)

Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Volume: 31 Issue: 3 Article Number: 031404 DOI: 10.1116/1.4798309 Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Residual impurities and contamination on semi-insulating (SI) InP wafers are detrimental for epitaxial growth and device performance, especially because residual silicon on an SI-InP wafer surface is electrically active and generates an n-type conduction layer at the interface between the epilayer and the InP substrate. In order to reduce the concentration of Si and improve surface quality, the authors investigate a wet-chemical cleaning process for ready-to-use InP substrates. A novel and practical cleaning process was developed by adding an alkaline solution to the conventional acidic cleaning process. Time-of-flight secondary mass spectrometry, a very powerful analysis technique to characterize surfaces and investigate any organic and inorganic contamination present on the InP surface, was used after the samples were etched under different cleaning processes. The results show that the novel etching process effectively reduces the Si contamination. (C) 2013 American Vacuum Society.

Addresses: [Liu, Jingming; Zhao, Youwen; Dong, Zhiyuan; Yang, Fengyun; Wang, Fenghua; Cao, Kewei; Liu, Tong; Xie, Hui; Chen, Teng] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Liu, JM (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912,A35,Qinghua East Rd, Beijing 100083, Peoples R China.

E-mail Addresses: liujm10@semi.ac.cn

ISSN: 0734-2101

Record 293 of 495

Title: Perpendicularly magnetized MnxGa films: promising materials for future spintronic devices, magnetic recording and permanent magnets

Author(s): Zhu, LJ (Zhu, Lijun); Zhao, JH (Zhao, Jianhua)

Source: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Volume: 111 Issue: 2 Pages: 379-387 DOI: 10.1007/s00339-013-7608-4 Published: MAY 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: In this article, we review the recent progress in synthesis, characterization and related spintronic devices of tetragonal MnxGa alloys with L1(0) or D0(22) ordering. After a brief introduction to the growing demands for perpendicularly magnetized materials and the prospective candidate of MnxGa, we focus on lattice structures and synthesis of MnxGa bulks, and epitaxial growth, structural characterization and magnetic properties of MnxGa films. Then we discuss effective ways to tailor and improve the structure and magnetism for possible applications in spintronics, magnetic recording and permanent magnets. Finally, we outline the recent progress in spin polarization, magnetic damping, magneto-optical and magneto-transport behaviors and thermal and chemical stability of MnxGa films and related spintronic devices like magnetic tunneling junctions, spin valves and spin injectors into semiconductors.

Addresses: [Zhu, Lijun; Zhao, Jianhua] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Zhao, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jhzhao@red.semi.ac.cn

ISSN: 0947-8396

Record 294 of 495

Title: Numerical study of radial temperature distribution in the AlN sublimation growth system

Author(s): Li, HJ (Li, Huijie); Liu, XL (Liu, Xianglin); Feng, YX (Feng, Yuxia); Wei, HY (Wei, Hongyuan); Yang, SY (Yang, Shaoyan)

Source: CRYSTAL RESEARCH AND TECHNOLOGY Volume: 48 Issue: 5 Pages: 321-327 DOI: 10.1002/crat.201300064 Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A large radial temperature gradient in the AlN sublimation growth system would lead to non-uniform growth rate along the radial direction and introduce thermal stress in the as grown crystal. In this paper, we have numerically studied the radial thermal uniformity in the crucible of a AlN sublimation growth system. The temperature difference on the source top surface is insignificant while the radial temperature gradient on the lid surface is too large to be neglected. The simulation results showed that the crucible material with a large thermal conductivity is beneficial to obtain a uniform temperature distribution on the lid surface. Moreover, it was found that the temperature gradient on the lid surface decreases with increased lid thickness and decreased top window size.

Addresses: [Li, Huijie; Liu, Xianglin; Feng, Yuxia; Wei, Hongyuan; Yang, Shaoyan] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Li, HJ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: hjli2009@semi.ac.cn

ISSN: 0232-1300

Record 295 of 495

Title: Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS

Author(s): Gong, X (Gong, Xiao); Han, GQ (Han, Genquan); Liu, B (Liu, Bin); Wang, LX (Wang, Lanxiang); Wang, W (Wang, Wei); Yang, Y (Yang, Yue); Kong, EYJ (Kong, Eugene Yu-Jin); Su, SJ (Su, Shaojian); Xue, CL (Xue, Chunlai); Cheng, BW (Cheng, Buwen); Yeo, YC (Yeo, Yee-Chia)

Source: IEEE TRANSACTIONS ON ELECTRON DEVICES Volume: 60 Issue: 5 Pages: 1640-1648 DOI: 10.1109/TED.2013.2255057 Published: MAY 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: We report a novel common gate-stack solution for In0.7Ga0.3As n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) and Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs), featuring sub-400 degrees C Si2H6 passivation, sub-1.75-nm capacitance equivalent thickness (CET), and single TaN metal gate. By incorporating Si2H6 passivation, an ultrathin SiO2/Si interfacial layer is formed between the high-k gate dielectric and the high mobility InGaAs and GeSn channels. The In0.7Ga0.3As nMOSFET and Ge0.97Sn0.03 pMOSFET show drive currents of similar to 143 and similar to 69 mu A/mu m, respectively, at vertical bar VDS vertical bar and vertical bar VGS-VTH vertical bar of 1V for a gate length L-G of 4 mu m. At an inversion carrier density N-inv of 10(13) cm(-2), In0.7Ga0.3 As nMOSFETs and Ge0.97Sn0.03 pMOSFETs show electron and hole mobilities of similar to 495 and similar to 230 cm(2)/V.s, respectively. At Ninv of 4 x 1012 cm-2, electron and hole mobility values of similar to 705 and similar to 346 cm(2)/V.s are achieved. Symmetric V-TH is realized by choosing a metal gate with midgap work function, and CET of less than 1.75nm is demonstrated with a gate-leakage current density (JG) of less than 10(-4)A/cm(2) at a gate bias of V-TH +/- 1V. Using this gate-stack, a Ge0.95Sn0.05 pMOSFET with the shortest L-G of 200nm is also realized. Drive current of similar to 680 mu A/mu m is achieved at V-DS of -1.5V and V-GS - V-TH of -2V, with peak intrinsic transconductance G(m,int) of similar to 492 mu S/mu m at V-DS of -1.1V.

Addresses: [Gong, Xiao; Han, Genquan; Liu, Bin; Wang, Lanxiang; Wang, Wei; Yang, Yue; Kong, Eugene Yu-Jin; Yeo, Yee-Chia] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore.

[Su, Shaojian] Huaqiao Univ, Xiamen 361021, Peoples R China.

[Xue, Chunlai; Cheng, Buwen] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Gong, X (reprint author), Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore.

E-mail Addresses: g0801802@nus.edu.sg; hangenquan@ieee.org; liubin@nus.edu.sg; lanxiang@nus.edu.sg; elewwei@nus.edu.sg; yue_yang@nus.edu.sg; eugkong@gmail.com; sushao-jian@hqu.edu.cn; clxue@semi.ac.cn; cbw@semi.ac.cn; yeo@ieee.org

ISSN: 0018-9383

Record 296 of 495

Title: Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier

Author(s): Kong, X (Kong, Xin); Wei, K (Wei, Ke); Liu, GG (Liu, Guoguo); Liu, XY (Liu, Xinyu); Wang, CM (Wang, Cuimei); Wang, XL (Wang, Xiaoliang)

Source: APPLIED PHYSICS EXPRESS Volume: 6 Issue: 5 Article Number: 051201 DOI: 10.7567/APEX.6.051201 Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: An ultrathin AlN layer is inserted between the GaN channel and buffer in the fabrication of deep-submicrometer AlGaN/GaN high-electron-mobility transistors (HEMTs). The wide bandgap of AlN establishes a high back barrier and thus enhances the confinement of two-dimensional electron gas under high drain bias voltages. Owning to the effective suppression of short-channel effects in the device with a highly scaled gate length, the fabricated AlN back barrier HEMTs show better pinch-off quality, lower subthreshold current, lower drain-induced barrier lowering factor, and better high-frequency response than the reference device without an AlN back barrier. (C) 2013 The Japan Society of Applied Physics