Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

ISSN: 0741-3106
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Record 385 of 495

Title: High response solar-blind ultraviolet photodetector based on Zr0.5Ti0.5O2 film

Author(s): Zhang, M (Zhang, Min); Gu, XH (Gu, Xuehui); Lv, KB (Lv, Kaibo); Dong, W (Dong, Wei); Ruan, SP (Ruan, Shengping); Chen, Y (Chen, Yu); Zhang, HF (Zhang, Haifeng)

Source: APPLIED SURFACE SCIENCE Volume: 268 Pages: 312-316 DOI: 10.1016/j.apsusc.2012.12.084 Published: MAR 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this letter, high response solar-blind Zr0.5Ti0.5O2 ultraviolet detectors with Au and Pt electrodes were fabricated. The stability and photoelectric characteristics of the devices at different temperature and relative humidity were studied. The detectors covered the whole solar-blind spectrum range and responded mainly in 200-290 nm. At 5 V bias, 25 degrees C and 33% RH, the dark current of the detector with Pt electrodes was only 17 pA. Under the radiation of 250 nm UV light, a high responsivity of 620 mA/W was obtained for Pt electrodes device. Moreover, the detector also exhibited a fast response time: the rise and fall time were 424.1 and 154 ms, respectively. (C) 2012 Elsevier B.V. All rights reserved.

Addresses: [Zhang, Min; Gu, Xuehui; Lv, Kaibo; Dong, Wei; Ruan, Shengping] Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China.

[Chen, Yu] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Zhang, Haifeng] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA.

Reprint Address: Ruan, SP (reprint author), Jilin Univ, State Key Lab Integrated Optoelect, 2699 Qianjin St, Changchun 130012, Peoples R China.

E-mail Addresses: rsp1226@gmail.com; chenyu@semi.ac.cn

ISSN: 0169-4332

Record 386 of 495

Title: 2013 3rd issue of SCIENCE CHINA Technological Sciences 11431 (Special Topic on Optoelectronic Technology and Its Applications(537-628)

Author(s): Zhu, NH (Zhu NingHua); Su, YK (Su YiKai); Liu, JG (Liu JianGuo)

Source: SCIENCE CHINA-TECHNOLOGICAL SCIENCES Volume: 56 Issue: 3 Pages: 537-537 DOI: 10.1007/s11431-012-5111-3 Published: MAR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Addresses: [Zhu NingHua; Liu JianGuo] Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.

[Su YiKai] Shanghai Jiao Tong Univ, Ctr Optoelect Mat & Devices, Shanghai, Peoples R China.

Reprint Address: Zhu, NH (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.

ISSN: 1674-7321
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Record 387 of 495

Title: Output characteristics of square and circular resonator microlasers connected with two output waveguides

Author(s): Huang, YZ (Huang YongZhen); Lu, XM (Lu XiaoMeng); Lin, JD (Lin JianDong); Du, Y (Du Yun)

Source: SCIENCE CHINA-TECHNOLOGICAL SCIENCES Volume: 56 Issue: 3 Pages: 538-542 DOI: 10.1007/s11431-013-5130-8 Published: MAR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Square and circular resonator microlasers connected with two output waveguides are investigated for correlation of output powers from the two output ports. The square resonator microlasers with two output waveguides connected at the midpoint of one side and one vertex are fabricated and tested by measuring the output power versus injection current and the laser spectra of the two ports. The laser spectra indicated that the output power correlation between the two output ports is very weak because of different lasing modes in different ports of the square microlaser. Circular resonator microlaser with two output waveguides can realize single mode operation and has good output correlation from the two ports. So the output power from one port of the circular microlasers can be monitored by that of another port.

Addresses: [Huang YongZhen; Lu XiaoMeng; Lin JianDong; Du Yun] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Huang, YZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: yzhuang@semi.ac.cn

ISSN: 1674-7321

Record 388 of 495

Title: InP based DFB laser array integrated with MMI coupler

Author(s): Zhu, HL (Zhu HongLiang); Ma, L (Ma Li); Liang, S (Liang Song); Zhang, C (Zhang Can); Wang, BJ (Wang BaoJun); Zhao, LJ (Zhao LingJuan); Wang, W (Wang Wei)

Source: SCIENCE CHINA-TECHNOLOGICAL SCIENCES Volume: 56 Issue: 3 Pages: 573-578 DOI: 10.1007/s11431-012-5118-9 Published: MAR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The techniques used for the fabrication of photonic integrated circuit (PIC) chip are introduced briefly. Then a four channel DFB laser array integrated with MMI coupler and semiconductor optical amplifier (SOA) fabricated with butt-joint technique, varied ridge width and holographic exposure techniques is reported.

Addresses: [Zhu HongLiang; Ma Li; Liang Song; Zhang Can; Wang BaoJun; Zhao LingJuan; Wang Wei] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Ma Li] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China.

Reprint Address: Zhu, HL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: zhuhl@red.semi.ac.cn

ISSN: 1674-7321
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Record 389 of 495

Title: Development of silicon photonic devices for optical interconnects

Author(s): Xiao, X (Xiao Xi); Li, ZY (Li ZhiYong); Chu, T (Chu Tao); Xu, H (Xu Hao); Li, XY (Li XianYao); Nemkova, A (Nemkova, Anastasia); Kang, X (Kang Xiong); Yu, YD (Yu YuDe); Yu, JZ (Yu JinZhong)

Source: SCIENCE CHINA-TECHNOLOGICAL SCIENCES Volume: 56 Issue: 3 Pages: 586-593 DOI: 10.1007/s11431-012-5120-2 Published: MAR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Silicon photonic devices based on complementary-metal-oxide-semiconductor (CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration, high speed modulation and switching, and efficient off-chip optical coupling. This paper presents the recent progress on fast silicon optical modulation, wavelength-insensitive optical switching and efficient optical coupling techniques in our group. Several CMOS-compatible silicon optical couplers with different structures have been developed, showing the highest coupling efficiency of 65%. Broadband silicon-based optical switches with sub-nanosecond switching on-off time are experimentally realized. Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s(-1).

Addresses: [Xiao Xi; Li ZhiYong; Chu Tao; Xu Hao; Li XianYao; Nemkova, Anastasia; Kang Xiong; Yu YuDe; Yu JinZhong] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Yu, JZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: jzyu@semi.ac.cn

ISSN: 1674-7321

Record 390 of 495

Title: Fast tunable and broadband microwave sweep-frequency source based on photonic technology

Author(s): Zhu, NH (Zhu NingHua); Du, YX (Du YuanXin); Wu, XM (Wu XuMing); Zheng, JY (Zheng JianYu); Wang, H (Wang Hui); Liu, JG (Liu JianGuo)

Source: SCIENCE CHINA-TECHNOLOGICAL SCIENCES Volume: 56 Issue: 3 Pages: 612-616 DOI: 10.1007/s11431-012-5117-x Published: MAR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A high-speed broadband tunable microwave source utilizing the wavelength tunable characteristics of distributed Bragg reflector (DBR) laser is proposed and demonstrated. The wavelength tuning of the laser is achieved instantaneously by controlling the voltage of the phase section of the DBR laser. By means of optical delay self-heterodyne technology, the microwave signal with the property of frequency broadband tuning is generated. Sweep speeds of 5 and 40 mu s of the sweep-frequency source prototype were achieved and the maximum tuning range was up to 38.45 GHz.

Addresses: [Zhu NingHua; Du YuanXin; Wu XuMing; Zheng JianYu; Wang Hui; Liu JianGuo] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Liu, JG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: jgliu@semi.ac.cn

ISSN: 1674-7321

Record 391 of 495

Title: Dual current injection tunable SBG semiconductor laser with asymmetric p equivalent phase shift

Author(s): Zhou, YT (Zhou, Yating); Hou, J (Hou, Jie); Chen, XF (Chen, Xiangfei)

Source: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS Volume: 55 Issue: 3 Pages: 692-696 DOI: 10.1002/mop.27357 Published: MAR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: An asymmetric p equivalent phase shift sampled Bragg grating (SBG) semiconductor, which is consisted of two section with the same length but different sampling duty cycle 0.4 and 0.6, is investigated experimentally. By increasing the two injected currents of the studied laser from 15 mA to 120 mA, the lasing wavelength can be tuned by 2.1 nm. Combining selecting appropriate sampling period, the lasing wavelength of the laser can be tuned to meet the ITU-T standard. Because of high yield and low cost, this type of SBG laser is very beneficial for designing and fabricating monolithically integrated wideband multiwavelength laser array for photonic integrated circuits in next generation fiber-optic system. (C) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:692696, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27357

Addresses: [Zhou, Yating] Changzhou Inst Technol, Sch Sci, Changzhou 213002, Peoples R China.

[Zhou, Yating; Chen, Xiangfei] Nanjing Univ, Coll Engn & Appl Sci, Nanjing, Jiangsu, Peoples R China.

[Hou, Jie] Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.

Reprint Address: Zhou, YT (reprint author), Changzhou Inst Technol, Sch Sci, Changzhou 213002, Peoples R China.

E-mail Addresses: zhou-yating@163.com

ISSN: 0895-2477

Record 392 of 495

Title: Analysis of Mode Coupling and Threshold Gain Control for Nanocircular Resonators Confined by Isolation and Metallic Layers

Author(s): Yao, QF (Yao, Qi-Feng); Huang, YZ (Huang, Yong-Zhen); Zou, LX (Zou, Ling-Xiu); Lv, XM (Lv, Xiao-Meng); Lin, JD (Lin, Jian-Dong); Yang, YD (Yang, Yue-De)

Source: JOURNAL OF LIGHTWAVE TECHNOLOGY Volume: 31 Issue: 5 Pages: 786-792 DOI: 10.1109/JLT.2012.2234437 Published: MAR 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Mode coupling and the control of mode Q factor and threshold gain are analyzed for nanocircular resonators confined by isolation and metallic layers based on solving eigenvalue equation for multiple-layer structure circular resonators. For nanocircular resonators only confined by a metallic layer, the metallic layer can enhance the mode confinement for transverse magnetic (TM) whispering-gallery modes (WGMs) and result in high Q TM WGMs. But transverse electric (TE) WGMs can form hybrid modes of surface plasmon polaritons and dielectric modes, with the mode Q factors limited by the metallic layer absorption. By introducing a low index isolation layer between the resonator and the metallic layer, we can greatly enhance the mode Q factors for TE WGMs. However, the mode coupling between different radial modes and the variation of the optical confinement factor in the active layer can result in the oscillation of the mode Q factor and threshold gain versus the isolation layer thickness. The optimization of the isolation layer thickness is important to enhance the mode Q factor and the optical confinement factor for realizing low threshold gain.

Addresses: [Yao, Qi-Feng; Huang, Yong-Zhen; Zou, Ling-Xiu; Lv, Xiao-Meng; Lin, Jian-Dong; Yang, Yue-De] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Yao, QF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: qifengyao@semi.ac.cn; yzhuang@semi.ac.cn; zoulingxiu@semi.ac.cn; lvxiaomeng@semi.ac.cn; linjiandong@semi.ac.cn; yyd@semi.ac.cn

ISSN: 0733-8724

Record 393 of 495

Title: P-type reduced graphene oxide membranes induced by iodine doping

Author(s): Wang, Z (Wang, Zhi); Wang, WZ (Wang, Wenzhong); Wang, ML (Wang, Meili); Meng, XQ (Meng, Xiuqing); Li, JB (Li, Jingbo)

Source: JOURNAL OF MATERIALS SCIENCE Volume: 48 Issue: 5 Pages: 2284-2289 DOI: 10.1007/s10853-012-7006-x Published: MAR 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Reduced graphene oxide membranes with electrical conductivity of 201 S/cm were successfully fabricated by a simple hydriodic acid reducing method. It has been shown that the obtained graphene oxide membranes exhibit a p-type conductive property with a hole carrier concentration of 3.66 x 10(17) cm(-2) and a mobility of 13.7 cm(2)/Vs. The p-type conductive property was mainly attributed to iodine atom adsorption on C atom layer, supported by the energy dispersive X-ray spectrometry and the first-principles calculations based on the density functional theory. The Bader method was used to analyze charge density of each atom. It has been shown that 0.38 electrons per unit cell are transferred to I atom from the C atom layer which leaves a lot of holes.

Addresses: [Wang, Zhi; Wang, Meili; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Wang, Wenzhong] Minzu Univ China, Sch Sci, Beijing 100081, Peoples R China.

[Meng, Xiuqing] Zhejiang Normal Univ, Jinhua 321004, Zhejiang, Peoples R China.

Reprint Address: Wang, Z (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: zhiwang@semi.ac.cn; jbli@semi.ac.cn

ISSN: 0022-2461

Record 394 of 495

Title: In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy

Author(s): Yu, JL (Yu, J. L.); Chen, YH (Chen, Y. H.); Bo, X (Bo, X.); Jiang, CY (Jiang, C. Y.); Ye, XL (Ye, X. L.); Wu, SJ (Wu, S. J.); Gao, HS (Gao, H. S.)

Source: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 8 Article Number: 083504 DOI: 10.1063/1.4790577 Published: FEB 28 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In-plane optical anisotropy (IPOA) in modulation-doped (001) GaAs/AlGaAs quantum wells (QWs) has been studied by reflectance difference spectroscopy (RDS). By changing the position of the delta-doping layer, we introduce an asymmetric potential into the quantum well system, which results in an additional IPOA. Compared to symmetrically doped and undoped structure, the asymmetrically doped QWs exhibit larger IPOA, which is clearly demonstrated both by the RDS results measured at 80 K and the linear extrapolation of the RDS signal under uniaxial strain measured at room temperature. Numerical calculations within the envelope function framework show that the asymmetric potential induced by asymmetrically doping will introduce additional hole-mixing coefficients. This work demonstrates that the IPOA of QWs can be tailored by changing the delta-doping position. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790577]

Addresses: [Yu, J. L.; Chen, Y. H.; Bo, X.; Jiang, C. Y.; Ye, X. L.; Wu, S. J.; Gao, H. S.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Yu, J. L.] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian Province, Peoples R China.

[Yu, J. L.] Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Fuzhou 350108, Fujian Province, Peoples R China.

Reprint Address: Yu, JL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yhchen@semi.ac.cn

ISSN: 0021-8979

Record 395 of 495

Title: High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization

Author(s): Xiao, X (Xiao, Xi); Xu, H (Xu, Hao); Li, XY (Li, Xianyao); Li, ZY (Li, Zhiyong); Chu, T (Chu, Tao); Yu, YD (Yu, Yude); Yu, JZ (Yu, Jinzhong)

Source: OPTICS EXPRESS Volume: 21 Issue: 4 Pages: 4116-4125 Published: FEB 25 2013

Times Cited in Web of Science: 5

Total Times Cited: 5

Abstract: We demonstrate a high-speed silicon Mach-Zehnder modulator (MZM) with low insertion loss, based on the carrier depletion effect in a lateral PN junction. A 1.9 dB on-chip insertion loss and a V pi L pi < 2 V.cm were achieved in an MZM with a 750 mu m-long phase shifter by properly choosing the doping concentration and precisely locating the junction. High-speed modulations up to 45-60 Gbit/s have been demonstrated with an additional 1.6 dB optical loss, indicating a total insertion loss of 3.5 dB. A high extinction ratio of 7.5 dB was also realized at the bit rate of 50 Gbit/s with an acceptable insertion loss of 6.5 dB. (C)2013 Optical Society of America

Addresses: [Xiao, Xi; Xu, Hao; Li, Xianyao; Li, Zhiyong; Chu, Tao; Yu, Yude; Yu, Jinzhong] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Xiao, X (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yudeyu@semi.ac.cn

ISSN: 1094-4087

Record 396 of 495

Title: Anomalous electron collimation in HgTe quantum wells with inverted band structure

Author(s): Zou, YL (Zou, Y. L.); Zhang, LB (Zhang, L. B.); Song, JT (Song, J. T.)

Source: JOURNAL OF PHYSICS-CONDENSED MATTER Volume: 25 Issue: 7 Article Number: 075801 DOI: 10.1088/0953-8984/25/7/075801 Published: FEB 20 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We investigate the electron collimation behavior in HgTe quantum wells (QWs) with a magnetic-electric barrier induced by a ferromagnetic metal stripe. We find that electrons can transmit perfectly through the magnetic-electric barrier at some specific incidence angles. These angles can be controlled by the tuning gate voltage, local magnetic field and Fermi energy of incident electrons in QWs with appropriate barrier length. This collimation feature can be used to construct momentum filters in HgTe QWs and has potential application in nanodevices.

Addresses: [Zou, Y. L.] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China.

[Zhang, L. B.] Chinese Acad Sci, SKLSM, Inst Semicond, Beijing 100083, Peoples R China.

[Song, J. T.] Hebei Normal Univ, Dept Phys, Shijiazhuang 050024, Hebei, Peoples R China.

[Song, J. T.] Hebei Normal Univ, Hebei Adv Thin Film Lab, Shijiazhuang 050024, Hebei, Peoples R China.

Reprint Address: Zou, YL (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China.

E-mail Addresses: lbzhang@semi.ac.cn

ISSN: 0953-8984
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Record 397 of 495

Title: Improving the optical absorption of BiFeO3 for photovoltaic applications via uniaxial compression or biaxial tension

Author(s): Dong, HF (Dong, Huafeng); Wu, ZG (Wu, Zhigang); Wang, SY (Wang, Shanying); Duan, WH (Duan, Wenhui); Li, JB (Li, Jingbo)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 7 Article Number: 072905 DOI: 10.1063/1.4793397 Published: FEB 18 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: First-principles computations are employed to investigate the electronic structures and optical absorption of rhombohedral BiFeO3 under uniaxial compression and biaxial tension. We find that the bandgap of BiFeO3 is reduced under uniaxial compression, and it can be tuned to the ideal value for photovoltaic applications; furthermore, the indirect-to-direct bandgap transition occurs, which would lead to much enhanced optical absorption near the band edge. Similar results are found for biaxial tensile strain. Strong optical absorption is critical to build efficient solar cells based on ferroelectric thin films; strain engineering is thus a practical route towards realizing this scheme, in which no junction is needed to separate charge carriers. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793397]

Addresses: [Dong, Huafeng; Wang, Shanying; Duan, Wenhui] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

[Dong, Huafeng; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Wu, Zhigang] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA.

Reprint Address: Dong, HF (reprint author), Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

E-mail Addresses: zhiwu@mines.edu; jbli@semi.ac.cn

ISSN: 0003-6951

Record 398 of 495

Title: Observation of circular dichroism in (001)-oriented P-I-N InGaAs/GaAs quantum wells without magnetic field

Author(s): Yu, JL (Yu, J. L.); Chen, YH (Chen, Y. H.); Liu, Y (Liu, Y.); Jiang, CY (Jiang, C. Y.); Ma, H (Ma, H.); Zhu, LP (Zhu, L. P.); Qin, XD (Qin, X. D.)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 7 Article Number: 072404 DOI: 10.1063/1.4793211 Published: FEB 18 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The (001)-oriented P-I-N InGaAs/GaAs quantum wells (QWs) are studied by means of helicity dependent spin photocurrent. We have observed an unexpected circular dichroism effect along [001] direction in the QWs without an applied magnetic field. The circular polarization rate can be linearly tuned by the applied DC current flowing along [001] direction, and its value is enhanced more than one order in an InGaAs/GaAs vertical-cavity surface-emitting laser with distributed Bragg reflectors than that in a common InGaAs/GaAs QWs. This experiment indicates a type of spin-splitting in (001)-grown P-I-N InGaAs/GaAs quantum wells induced by space inversion asymmetry introduced by residual strain which is previously overlooked. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793211]