Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Reprint Address: Chen, D (reprint author), HUST, WNLO, Wuhan 430074, Peoples R China.

E-mail Addresses: dichen@mall.hust.edu.cn; gzshen@semi.ac.cn

ISSN: 1936-0851

Record 235 of 495

Title: The numerical-aperture-dependent optical contrast and thickness determination of ultrathin flakes of two-dimensional atomic crystals: A case of graphene multilayers

Author(s): Han, WP (Han Wen-Peng); Shi, YM (Shi Yan-Meng); Li, XL (Li Xiao-Li); Luo, SQ (Luo Shi-Qiang); Lu, Y (Lu Yan); Tan, PH (Tan Ping-Heng)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 11 Article Number: 110702 DOI: 10.7498/aps.62.110702 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The optical and electronic properties of two-dimensional atomic crystals including graphene are closely dependent on their layer numbers (or thickness). It is a fundamental issue to fast and accurately identify the layer number of multilayer flakes of two-dimensional atomic crystals before further research and application in optoelectronics. In this paper, we discuss in detail the application of transfer matrix method to simulate the optical contrast of ultrathin flakes of two-dimensional atomic crystals and further to identify their thickness, where numerical aperture of microscope objective is considered. The importance of numerical aperture in the thickness determination is confirmed by the experiments on the graphene flakes. Furthermore, two lasers with different wavelengths can be serviced as light sources for the thickness identification of flakes of two-dimensional atomic crystals with a size close to the diffraction limit of the microscope objective. The transfer matrix method is found to be very useful for the optical-contrast calculation and thickness determination of flakes of two-dimensional atomic crystals on multilayer dielectric substrate.

Addresses: [Han Wen-Peng; Shi Yan-Meng; Li Xiao-Li; Luo Shi-Qiang; Lu Yan; Tan Ping-Heng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Tan, PH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: phtan@semi.ac.cn

ISSN: 1000-3290

Record 236 of 495

Title: Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect

Author(s): Li, YM (Li Ya-Ming); Liu, Z (Liu Zhi); Xue, CL (Xue Chun-Lai); Li, CB (Li Chuan-Bo); Cheng, BW (Cheng Bu-Wen); Wang, QM (Wang Qi-Ming)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 11 Article Number: 114208 DOI: 10.7498/aps.62.114208 Published: JUN 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: We present a novel GeSi electro-absorption (EA) modulator design on a silicon-on-insulator platform. The GeSi EA modulator is constructed based on the Franz-Keldysh (FK) effect. The light is evanescent-coupled into the GeSi absorption layer from the rib Si waveguide. A contnet of 1.19% Si in SiGe absorption layer is chosen for C (1528-1560 nm) band operation. Simulation shows a high (3 dB) bandwidth of similar to 64 GHz and extinction ratio of 8.8 dB. Especially the insertion loss is as low as 2.7 dB.

Addresses: [Li Ya-Ming; Liu Zhi; Xue Chun-Lai; Li Chuan-Bo; Cheng Bu-Wen; Wang Qi-Ming] Chinese Acad Sci, Inst Semicond, Inst State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Cheng, BW (reprint author), Chinese Acad Sci, Inst Semicond, Inst State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: cbw@red.semi.ac.cn

ISSN: 1000-3290

Record 237 of 495

Title: Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials

Author(s): Zhang, BQ (Zhang Bai-Qiang); Zheng, ZS (Zheng Zhong-Shan); Yu, F (Yu Fang); Ning, J (Ning Jin); Tang, HM (Tang Hai-Ma); Yang, ZA (Yang Zhi-An)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 11 Article Number: 117303 DOI: 10.7498/aps.62.117303 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Nitrogen ions implanted into the buried oxide layer can increase the total dose radiation hardness of silicon on insulator (SOT) materials. However, the obvious increase in positive charge density in the buried layer with high dose of nitrogen implantation leads to a negative effect on the technology of nitrogen implantation into buried oxide. In order to suppress the increase in positive charge density in the nitrogen-implanted buried layer, co-implantation of nitrogen and fluorine is used to implant fluorine into the nitrogen-implanted buried layer. High-frequency voltage-capacitance (C-V) technique is used to characterize the positive charge density in the buried layer. Results show that, in most cases, using the co-implantation of nitrogen and fluorine can significantly reduce the positive charge density in the nitrogen-implanted buried layer. At the same time, it is also found that further increase of the positive charge density induced by fluorine implantation in the nitrogen-implanted buried layer can occur in particular cases. It is proposed that the decrease in the positive charge density in the fluorine and nitrogen-implanted buried layer is due to the introduction of electron traps into the buried layer through fluorine implantation.

Addresses: [Zhang Bai-Qiang; Tang Hai-Ma; Yang Zhi-An] Univ Jinan, Sch Phys & Technol, Jinan 250022, Peoples R China.

[Zheng Zhong-Shan; Yu Fang] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China.

[Ning Jin] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Yang, ZA (reprint author), Univ Jinan, Sch Phys & Technol, Jinan 250022, Peoples R China.

E-mail Addresses: zszheng513@163.com

ISSN: 1000-3290

Record 238 of 495

Title: Study on proton irradiation induced defects in GaN thick film

Author(s): Zhang, ML (Zhang Ming-Lan); Yang, RX (Yang Rui-Xia); Li, ZX (Li Zhou-Xin); Cao, XZ (Cao Xing-Zhong); Wang, BY (Wang Bao-Yi); Wang, XH (Wang Xiao-Hui)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 11 Article Number: 117103 DOI: 10.7498/aps.62.117103 Published: JUN 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Proton-irradiation-induced defects threaten seriously the stable performance of GaN-based devices in harsh environments, such as outer space. It is therefore urgent to understand the behaviors of proton-irradiation-induced defects for improving the radiation tolerance of GaN-based devices. Positron annihilation spectroscopy (PAS) has been used to study proton-induced defects in GaN grown by HYPE. The result shows that V-Ga is the main defects and no (VGaVN) or (VGaVN)(2) is formed in 5 MeV proton-irradiated GaN. Photoluminescence (PL) spectrum is carried out at 10K. After irradiation, the band edge shows a blue-shift, but the donor-acceptor pair (DAP) emission band and its LO-phonon replicas is kept at the original position. The intensity of yellow luminescence (YL) band is decreased, which means that the origin of YL band has no relation with V-Ga. The increased FWHM of GaN (0002) peak in proton-irradiated GaN indicates a degradation of crystal quality.

Addresses: [Zhang Ming-Lan; Yang Rui-Xia] Hebei Univ Technol, Colleage Informat Engn, Tianjin 300401, Peoples R China.

[Zhang Ming-Lan; Wang Xiao-Hui] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci Inst, Beijing 100083, Peoples R China.

[Li Zhou-Xin; Cao Xing-Zhong; Wang Bao-Yi] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China.

Reprint Address: Zhang, ML (reprint author), Hebei Univ Technol, Colleage Informat Engn, Tianjin 300401, Peoples R China.

E-mail Addresses: zhml@hebut.edu.cn

ISSN: 1000-3290

Record 239 of 495

Title: Photonic-Assisted Ultrawideband Pulse Generator With Tunable Notch Filtering Based on Polarization-to-Intensity Conversion

Author(s): Zheng, JY (Zheng, Jianyu); Zhu, NH (Zhu, Ninghua); Wang, H (Wang, Hui); Du, YX (Du, Yuanxin); Wang, LX (Wang, Lixian); Liu, JG (Liu, Jianguo)

Source: IEEE PHOTONICS JOURNAL Volume: 5 Issue: 3 Article Number: 7900909 DOI: 10.1109/JPHOT.2013.2259584 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A photonic approach to generating ultrawideband (UWB) pulses with tunable band-rejection behavior and a chirp-free property, which is based on a nonlinear operated polarization-to-intensity converter, is proposed and demonstrated. As an initial phase shift of the incident light phi(0) = pi, a high-order UWB pulse fully satisfied the indoor mask regulated by the Federal Communications Commission was synthesized by a pair of polarity-inverted and doublet-like pulses at the output port of the polarization beam combiner. Moreover, the notch band will occur dynamically on the power spectra of the UWB signals from 3 to 16 GHz through adjusting the relative delay time between both doublet-like pulses from 333 to 62.5 ps due to the effect of microwave photonic filtering, which means that the spectrum-overlay-induced interference between UWB and other narrow-band communication systems could be real-time averted. In addition, the polarity switch of the synthesized UWB pulse could be implemented by adjusting angle alpha between the x-axis component of modulated light and the principal axis of the arm of transverse electric mode by the polarization controller.

Addresses: [Zheng, Jianyu; Zhu, Ninghua; Wang, Hui; Du, Yuanxin; Wang, Lixian; Liu, Jianguo] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Liu, JG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: jgliu@semi.ac.cn

ISSN: 1943-0655

Record 240 of 495

Title: Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating

Author(s): Tongay, S (Tongay, Sefaattin); Zhou, J (Zhou, Jian); Ataca, C (Ataca, Can); Liu, J (Liu, Jonathan); Kang, JS (Kang, Jeong Seuk); Matthews, TS (Matthews, Tyler S.); You, L (You, Long); Li, JB (Li, Jingbo); Grossman, JC (Grossman, Jeffrey C.); Wu, JQ (Wu, Junqiao)

Source: NANO LETTERS Volume: 13 Issue: 6 Pages: 2831-2836 DOI: 10.1021/nl4011172 Published: JUN 2013

Times Cited in Web of Science: 4

Total Times Cited: 4

Abstract: In the monolayer limit, transition metal dichalcogenides become direct-bandgap, light-emitting semiconductors. The quantum yield of light emission is low and extremely sensitive to the substrate used, while the underlying physics remains elusive. In this work, we report over 100 times modulation of light emission efficiency of these two-dimensional semiconductors by physical adsorption of O-2 and/or H2O molecules, while inert gases do not cause such effect. The O-2 and/or H2O pressure acts quantitatively as an instantaneously reversible "molecular gating" force, providing orders of magnitude broader control of carrier density and light emission than conventional electric field gating. Physi-sorbed O-2 and/or H2O molecules electronically deplete n-type materials such as MoS2 and MoSe2, which weakens electrostatic screening that would otherwise destabilize excitons, leading to the drastic enhancement in photoluminescence. In p-type materials such as WSe2, the molecular physisorption results in the opposite effect Unique and universal in two-dimensional semiconductors, the effect offers a new mechanism for modulating electronic interactions and implementing optical devices.

Addresses: [Tongay, Sefaattin; Zhou, Jian; Liu, Jonathan; Kang, Jeong Seuk; Matthews, Tyler S.; Wu, Junqiao] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA.

[Ataca, Can; Grossman, Jeffrey C.] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA.

[You, Long] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA.

[Li, Jingbo] Chinese Acad Sci, Inst Semiconduct, Beijing 100083, Peoples R China.

[Wu, Junqiao] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.

Reprint Address: Wu, JQ (reprint author), Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA.

E-mail Addresses: wuj@berkeley.edu

ISSN: 1530-6984

Record 241 of 495

Title: Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

Author(s): Li, JJ (Li, Jijun); Zhao, CW (Zhao, Chunwang); Xing, YM (Xing, Yongming); Su, SJ (Su, Shaojian); Cheng, BW (Cheng, Buwen)

Source: MATERIALS Volume: 6 Issue: 6 Pages: 2130-2142 DOI: 10.3390/ma6062130 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type of misfit dislocation at the interface was determined to be 60 dislocation and 90 full-edge dislocation. The full-field strains at the Ge/Si heterostructure interface were mapped by using the geometric phase analysis (GPA) and peak pairs analysis (PPA), respectively. The effect of the mask size on the GPA and PPA results was analyzed in detail. For comparison, the theoretical strain fields of the misfit dislocations were also calculated by the Peierls-Nabarro and Foreman dislocation models. The results showed that the optimal mask sizes in GPA and PPA were approximately three tenths and one-tenth of the reciprocal lattice vector, respectively. The Foreman dislocation model with an alterable factor a = 4 can best describe the strain field of the misfit dislocation at the Ge/Si heterostructure interface.

Addresses: [Li, Jijun; Zhao, Chunwang; Xing, Yongming] Inner Mongolia Univ Technol, Coll Sci, Hohhot 010051, Peoples R China.

[Su, Shaojian] Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021, Peoples R China.

[Cheng, Buwen] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Zhao, CW (reprint author), Inner Mongolia Univ Technol, Coll Sci, Hohhot 010051, Peoples R China.

E-mail Addresses: lijjtom@yahoo.com.cn; zhaocw@imut.edu.cn; xym@imut.edu.cn; sushaojian@hqu.edu.cn; cbw@red.semi.ac.cn

ISSN: 1996-1944

Record 242 of 495

Title: Double Plasmon-Induced Transparency in Hybrid Waveguide-Plasmon System and Its Application for Localized Plasmon Resonance Sensing with High Figure of Merit

Author(s): Liu, JT (Liu, Jietao); Xu, BZ (Xu, Binzong); Zhang, J (Zhang, Jing); Song, GF (Song, Guofeng)

Source: PLASMONICS Volume: 8 Issue: 2 Pages: 995-1001 DOI: 10.1007/s11468-013-9501-6 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We demonstrate multispectral sharp plasmon-induced transparency response in a hybrid waveguide-plasmon system. By using the classical mechanical model of coupled damped harmonic oscillators, a clear and intuitive interpretation of the construction of the double-electromagnetically induced transparency (EIT)-like phenomenon is provided. High figure of merit up to 28.8 of the system for localized plasmon resonance refractive index sensing is obtained. Narrow polarization-independent double EIT-like spectral response is constructed, which provides an efficient tool for possible applications on slow light, enhanced nonlinear effect, nanoplasmonic functional devices, and integrated optical circuit.

Addresses: [Liu, Jietao; Xu, Binzong; Zhang, Jing; Song, Guofeng] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Song, GF (reprint author), Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: sgf@semi.ac.cn

ISSN: 1557-1955

Record 243 of 495

Title: Tunable Omnidirectional Broadband Band-Stop Filter in Symmetric Hybrid Plasmonic Structures

Author(s): Liu, JT (Liu, Jietao); Zhang, J (Zhang, Jing); Cai, LK (Cai, Likang); Xu, BZ (Xu, Binzong); Song, GF (Song, Guofeng)

Source: PLASMONICS Volume: 8 Issue: 2 Pages: 1101-1108 DOI: 10.1007/s11468-013-9515-0 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We numerically investigate a symmetric hybrid waveguide-plasmon system composed of a periodic metallic nanowires pairs array embedded in symmetric dielectric sandwich layers for band-stop filtering in the optical frequency range. The proposed symmetric system shows an omnidirectional broadband absorption enhancement with flat band-stop transmission induced by the coupling and hybridization of photonic and plasmonic modes. The transmission stop band bandwidth ranging from 80 to 585 nm is observed. The bandwidth of the proposed system can be further manipulated by tailoring their geometrics for potential applications in plasmonic-assisted broadband optical filtering.

Addresses: [Liu, Jietao; Zhang, Jing; Cai, Likang; Xu, Binzong; Song, Guofeng] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Song, GF (reprint author), Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: sgf@semi.ac.cn

ISSN: 1557-1955

Record 244 of 495

Title: Effect of MoO3-doped PTCDA as buffer layer on the performance of CuPc/C60 solar cells

Author(s): Guan, M (Guan, Min); Cao, GH (Cao, Guohua); Chu, XB (Chu, Xinbo); Zhang, Y (Zhang, Yang); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping)

Source: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Volume: 210 Issue: 6 Pages: 1178-1182 DOI: 10.1002/pssa.201228597 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The long-term performance stability of organic solar cells (OSCs), as well as their high power-conversion efficiency, is necessary for their practical use. A stable OSC with the structure of ITO/buffer/donor/acceptor/cathode is presented. A thin layer of MoO3-doped PTCDA (molar ratio 1:1) is adopted as the buffer in CuPc/C60 organic heterojunction photovoltaic (PV) solar cells, resulting in four to five times longer lifetime. The CT complex of buffer layer plays a decisive role in improving the stability and abnormal efficiency changes.

Addresses: [Guan, Min; Chu, Xinbo] Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Cao, Guohua] Henan Polytech Univ, Sch Phys & Chem, Jiaozuo 454000, Peoples R China.

[Zhang, Yang; Liu, Xingfang; Zeng, Yiping] Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Guan, M (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: guanmin@semi.ac.cn; ghcao@hpu.edu.cn; ypzeng@semi.ac.cn

ISSN: 1862-6300

Record 245 of 495

Title: The Growth and Fabrication of InGaN/GaN Multi-Quantum Well Solar Cells on Si(111) Substrates

Author(s): Li, ZD (Li Zhi-Dong); Xiao, HL (Xiao Hong-Ling); Wang, XL (Wang Xiao-Liang); Wang, CM (Wang Cui-Mei); Deng, QW (Deng Qing-Wen); Jing, L (Jing Liang); Ding, JQ (Ding Jie-Qin); Wang, ZG (Wang Zhan-Guo); Hou, X (Hou Xun)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 6 Article Number: 068402 DOI: 10.1088/0256-307X/30/6/068402 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si (111) substrate is demonstrated, and an InGaN/GaNMQWs solar cell device is fabricated. Photo response measurement of the solar cell devices shows that the fill factor FF = 49.4%, open circuit voltage V-oc = 0.32 V, and short circuit current J(sc) = 0.07mA/cm(2), under AM 1.5 G illumination. In order to analyze the influence of material quality on the performance of solar cells, XRD, SEM and Raman scattering experiments are carried out. It is found that insertion of a proper top AlN layer can effectively improve the material quality, and therefore enhance the photovoltaic performance of the fabricated device.

Addresses: [Li Zhi-Dong; Xiao Hong-Ling; Wang Xiao-Liang; Wang Cui-Mei; Deng Qing-Wen; Jing Liang; Ding Jie-Qin; Wang Zhan-Guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Li Zhi-Dong; Xiao Hong-Ling; Wang Xiao-Liang; Wang Cui-Mei; Deng Qing-Wen; Jing Liang; Ding Jie-Qin; Wang Zhan-Guo] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

[Wang Xiao-Liang] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China.

[Wang Xiao-Liang; Hou Xun] Xi An Jiao Tong Univ, Xian 710049, Peoples R China.

Reprint Address: Xiao, HL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: hlxiao@semi.ac.cn

ISSN: 0256-307X
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Record 246 of 495

Title: InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition

Author(s): Luo, S (Luo Shuai); Ji, HM (Ji Hai-Ming); Gao, F (Gao Feng); Yang, XG (Yang Xiao-Guang); Liang, P (Liang Ping); Zhao, LJ (Zhao Ling-Juan); Yang, T (Yang Tao)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 6 Article Number: 068101 DOI: 10.1088/0256-307X/30/6/068101 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We demonstrate InAs/InGaAsP/InP quantum dot (QD) lasers grown by metalorganic chemical vapor deposition. The active region of the lasers consists of five layers of InAs QDs. Ridge waveguide lasers with 6 mu m width have been fabricated by standard optical lithography and wet etching. Under continuous wave operation at room temperature, a low threshold current density of 447 A/cm(2) per QD layer is achieved for a QD laser with a cavity length of 2 mm. Moreover, the lasing redshifts from 1.61 mu m to 1.645 mu m as the cavity length increases from 1.5 mm to 4 mm. A high characteristic temperature of up to 88 K is obtained in the temperature range between 10 degrees C and 40 degrees C.

Addresses: [Luo Shuai; Ji Hai-Ming; Gao Feng; Yang Xiao-Guang; Liang Ping; Zhao Ling-Juan; Yang Tao] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Yang, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.