Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Addresses: [Zhao Zhuan; Li Zong; Li Jiong] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Div Nanobiomed, Suzhou 215123, Peoples R China.

[Zhao Zhuan] Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China.

[Zhao Zhuan; Li Zong] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China.

[Li Zong] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Li, J (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Div Nanobiomed, Suzhou 215123, Peoples R China.

E-mail Addresses: jli2006@sinano.ac.cn

ISSN: 1001-6538
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Record 198 of 495

Title: Electron mobility limited by surface and interface roughness scattering in AlxGa1-xN/GaN quantum wells

Author(s): Wang, JX (Wang Jian-Xia); Yang, SY (Yang Shao-Yan); Wang, J (Wang Jun); Liu, GP (Liu Gui-Peng); Li, ZW (Li Zhi-Wei); Li, HJ (Li Hui-Jie); Jin, DD (Jin Dong-Dong); Liu, XL (Liu Xiang-Lin)

Source: CHINESE PHYSICS B Volume: 22 Issue: 7 Article Number: 077305 DOI: 10.1088/1674-1056/22/7/077305 Published: JUL 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.

Addresses: [Wang Jian-Xia; Yang Shao-Yan; Wang Jun; Liu Gui-Peng; Li Zhi-Wei; Li Hui-Jie; Jin Dong-Dong; Liu Xiang-Lin] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Yang, SY (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: jxwang2009@semi.ac; sh-yyang@semi.ac.cn

ISSN: 1674-1056

Record 199 of 495

Title: Tuning Properties of External Cavity Violet Semiconductor Laser

Author(s): Lv, XQ (Lv Xue-Qin); Chen, SW (Chen Shao-Wei); Zhang, JY (Zhang Jiang-Yong); Ying, LY (Ying Lei-Ying); Zhang, BP (Zhang Bao-Ping)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 7 Article Number: 074204 DOI: 10.1088/0256-307X/30/7/074204 Published: JUL 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A tunable grating-coupled external cavity (EC) laser is realized by employing a GaN-based laser diode as the gain device. A tuning range of 4.47 nm from 403.82 to 408.29 nm is achieved. Detailed investigations reveal that the injection current strongly influences the performance of the EC laser. Below the free-running lasing threshold, EC laser works stably. While above the free-running lasing threshold, a Fabry-Perot (F-P) resonance peak in the emission spectrum and a smooth kink in the output power-injection current characteristic curve are observed, suggesting the competition between the inner F-P cavity resonance and EC resonance. Furthermore, the tuning range is found to be asymmetric and occurs predominantly on the longer wavelength side. This is interpreted in terms of the asymmetric gain distribution of GaN-based quantum well material.

Addresses: [Lv Xue-Qin] Xiamen Univ, Pen Tung Sah Inst Micronano Sci & Technol, Xiamen 361005, Peoples R China.

[Chen Shao-Wei] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China.

[Zhang Jiang-Yong; Ying Lei-Ying; Zhang Bao-Ping] Xiamen Univ, Dept Elect Engn, Xiamen 361005, Peoples R China.

[Lv Xue-Qin] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhang, BP (reprint author), Xiamen Univ, Dept Elect Engn, Xiamen 361005, Peoples R China.

E-mail Addresses: bzhang@xmu.edu.cn

ISSN: 0256-307X
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Record 200 of 495

Title: Advanced rechargeable lithium-ion batteries based on bendable ZnCo2O4-urchins-on-carbon-fibers electrodes

Author(s): Liu, B (Liu, Bin); Wang, XF (Wang, Xianfu); Liu, BY (Liu, Boyang); Wang, QF (Wang, Qiufan); Tan, DS (Tan, Dongsheng); Song, WF (Song, Weifeng); Hou, XJ (Hou, Xiaojuan); Chen, D (Chen, Di); Shen, GZ (Shen, Guozhen)

Source: NANO RESEARCH Volume: 6 Issue: 7 Pages: 525-534 DOI: 10.1007/s12274-013-0329-3 Published: JUL 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: A novel class of ZnCo2O4-urchins-on-carbon-fibers matrix has been designed, characterized, and used to fabricate high-performance energy storage devices. We obtained a reversible lithium storage capacity of 1180 mA center dot h/g even after 100 cycles, demonstrating the highreversible capacity and excellent cycle life of the as-prepared samples. Tested as fast-charging batteries, these electrodes exhibited a considerable capacity of 750 mA center dot h/g at an exceptionally high rate of 20 C (18 A/g), with an excellent cycle life (as long as 100 cycles), which are the best high-rate results reported at such a high charge/discharge current density for ZnCo2O4-based anode materials in lithium rechargeable batteries. Such attractive properties may be attributed to the unique structure of the binder-free ZnCo2O4-urchins-on-carbon-fibers matrix. Full batteries were also developed by combining the ZnCo2O4 anodes with commercial LiCoO2 cathodes, which showed flexible/wearable and stable features for use as very promising future energy storage units.

Addresses: [Liu, Bin; Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Liu, Bin; Wang, Xianfu; Liu, Boyang; Wang, Qiufan; Tan, Dongsheng; Song, Weifeng; Hou, Xiaojuan; Chen, Di] Huazhong Univ Sci & Technol HUST, WNLO, Wuhan 430074, Peoples R China.

[Liu, Bin; Wang, Xianfu; Liu, Boyang; Wang, Qiufan; Tan, Dongsheng; Song, Weifeng; Hou, Xiaojuan; Chen, Di] Huazhong Univ Sci & Technol HUST, Coll Opt & Elect Informat, Wuhan 430074, Peoples R China.

Reprint Address: Shen, GZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: dichen@mail.hust.edu.cn; gzshen@semi.ac.cn

ISSN: 1998-0124

Record 201 of 495

Title: The output power and beam divergence behaviors of tapered terahertz quantum cascade lasers

Author(s): Li, YF (Li, YanFang); Wang, J (Wang, Jian); Yang, N (Yang, Ning); Liu, JQ (Liu, Junqi); Wang, T (Wang, Tao); Liu, FQ (Liu, Fengqi); Wang, ZG (Wang, Zhanguo); Chu, WD (Chu, Weidong); Duan, SQ (Duan, Suqing)

Source: OPTICS EXPRESS Volume: 21 Issue: 13 Pages: 15998-16006 DOI: 10.1364/OE.21.015998 Published: JUL 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We report on Terahertz quantum cascade lasers with tapered waveguide structure operating at similar to 103 mu m. The tapered waveguide effect on the output power and the laser beam divergence are experimentally studied with the tapered angle ranging from 0 degrees to 8 degrees. It is found that the peak output power of the devices with same length reaches the maximum at about 5 degrees similar to 6 degrees tapered angle. Meanwhile, the horizontal divergence angle of the laser beam can be greatly reduced. The existence of such optimal tapered angle is explained by the finite-element simulation with the consideration of the self-focusing effect for the devices with larger tapered angle. (C) 2013 Optical Society of America

Addresses: [Li, YanFang; Yang, Ning; Liu, Junqi; Wang, Tao; Liu, Fengqi; Wang, Zhanguo; Chu, Weidong; Duan, Suqing] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Li, YanFang; Yang, Ning; Liu, Junqi; Wang, Tao; Liu, Fengqi; Wang, Zhanguo; Chu, Weidong; Duan, Suqing] Inst Appl Phys & Computat Math, Beijing 100088, Peoples R China.

[Wang, Jian] Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R China.

Reprint Address: Yang, N (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: yang_ning@iapcm.ac.cn; jqliu@semi.ac.cn

ISSN: 1094-4087

Record 202 of 495

Title: Analysis of vertical radiation loss and far-field pattern for microcylinder lasers with an output waveguide

Author(s): Lv, XM (Lv, Xiao-Meng); Huang, YZ (Huang, Yong-Zhen); Yang, YD (Yang, Yue-De); Long, H (Long, Heng); Zou, LX (Zou, Ling-Xiu); Yao, QF (Yao, Qi-Feng); Jin, X (Jin, Xin); Xiao, JL (Xiao, Jin-Long); Du, Y (Du, Yun)

Source: OPTICS EXPRESS Volume: 21 Issue: 13 Pages: 16069-16074 DOI: 10.1364/OE.21.016069 Published: JUL 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Vertical radiation loss and far-field pattern are investigated for microcylinder lasers by 3D FDTD simulation and experimentally. The numerical results show that an output waveguide connected to the microcylinder resonator can result in additional vertical radiation loss for high Q coupled modes and affect the far field pattern. The vertical radiation loss can be controlled by adjusting the up cladding layer thickness. Furthermore, two lobes of vertical far-field patterns are observed for a 15-mu m-radius microcylinder laser connected with an output waveguide, which confirms the vertical radiation loss. (C)2013 Optical Society of America

Addresses: [Lv, Xiao-Meng; Huang, Yong-Zhen; Yang, Yue-De; Long, Heng; Zou, Ling-Xiu; Yao, Qi-Feng; Jin, Xin; Xiao, Jin-Long; Du, Yun] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Lv, XM (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yzhuang@semi.ac.cn

ISSN: 1094-4087

Record 203 of 495

Title: Theoretical investigation of a highly efficient nanograting for outcoupling XUV

Author(s): Yang, YY (Yang, Ying-Ying); Yu, HJ (Yu, Hai-Juan); Zhang, L (Zhang, Ling); Lin, XC (Lin, Xue-Chun)

Source: LASER PHYSICS LETTERS Volume: 10 Issue: 7 Article Number: 075302 DOI: 10.1088/1612-2011/10/7/075302 Published: JUL 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A highly efficient nano-periodical blazed grating is fully theoretically investigated for outcoupling extreme ultraviolet (XUV) radiation. Rigorous coupled-wave analysis (RCWA) with the S matrix method is employed to optimize the parameters of the grating. The grating is designed to be etched on the top layers of an IR reflector, performing as a highly reflective mirror for IR light and a highly efficient outcoupler for XUV. The diffraction efficiency of the -1 order of this XUV outcoupler is greater than 20% in the range near 60 nm, which allows high-resolution spectroscopy of the 1s-2s transition in He+ at around 60 nm with extreme precision. The theoretical calculations are consistent with the experimental data.

Addresses: [Yang, Ying-Ying; Yu, Hai-Juan; Zhang, Ling; Lin, Xue-Chun] Chinese Acad Sci, Lab Solid State Laser Sources, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Yang, YY (reprint author), Chinese Acad Sci, Lab Solid State Laser Sources, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: yangyy@semi.ac.cn; xclin@semi.ac.cn

ISSN: 1612-2011

Record 204 of 495

Title: Tunable DFB fiber laser based on photo-thermal effects

Author(s): Zhao, Q (Zhao, Q.); Wang, YJ (Wang, Y. J.); Xu, TW (Xu, T. W.); Dai, X (Dai, X.); Li, F (Li, F.); Qu, Y (Qu, Y.)

Source: LASER PHYSICS LETTERS Volume: 10 Issue: 7 Article Number: 075105 DOI: 10.1088/1612-2011/10/7/075105 Published: JUL 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A novel DFB fiber laser frequency tuning method involving introduction of a photo-thermal light resource into an optical fiber laser system is proposed. A theoretical analysis has been made and experiments have been done. The test results show that the static and dynamic frequency tuning range is about 112 MHz/100 mA and the tuning rate is more than 2 kHz. This method gives a simple way of achieving both relatively high dynamic tuning range and high tuning speed.

Addresses: [Zhao, Q.; Dai, X.; Qu, Y.] Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Jilin, Peoples R China.

[Zhao, Q.; Wang, Y. J.; Xu, T. W.; Dai, X.; Li, F.] Chinese Acad Sci, Optoelect Syst Lab, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhao, Q (reprint author), Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Jilin, Peoples R China.

E-mail Addresses: zqhero9494@163.com; wyj@semi.ac.cn; xutuanwei@semi.ac.cn; daixing@semi.ac.cn; lifang@semi.ac.cn; quyi@cust.edu.cn

ISSN: 1612-2011
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Record 205 of 495

Title: Silicon-on-insulator-based adiabatic splitter with simultaneous tapering of velocity and coupling

Author(s): Xing, JJ (Xing, Jiejiang); Xiong, K (Xiong, Kang); Xu, H (Xu, Hao); Li, ZY (Li, Zhiyong); Xiao, X (Xiao, Xi); Yu, JZ (Yu, Jinzhong); Yu, YD (Yu, Yude)

Source: OPTICS LETTERS Volume: 38 Issue: 13 Pages: 2221-2223 DOI: 10.1364/OL.38.002221 Published: JUL 1 2013

Times Cited in Web of Science: 4

Total Times Cited: 4

Abstract: We propose and experimentally demonstrate a 2 x 2 3 dB adiabatic splitter based on silicon-on-insulator technology, with simultaneous tapering of the phase velocity and coupling. The advantages of the proposed splitter are indicated by analyzing the effective index evolution of the system modes and comparing them with the simulated performances. The experimental results are in good agreement with the simulations. Over the 100 nm wavelength range measured, the output uniformity is better than 0.2 dB. A low and flat excess loss of about 0.3 dB per splitter is obtained, with a variation below 0.2 dB. (C) 2013 Optical Society of America

Addresses: [Xing, Jiejiang; Xiong, Kang; Xu, Hao; Li, Zhiyong; Xiao, Xi; Yu, Jinzhong; Yu, Yude] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Yu, YD (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yudeyu@semi.ac.cn

ISSN: 0146-9592

Record 206 of 495

Title: A high power picosecond Nd:YVO4 master oscillator power amplifier system pumped by 880 nm diodes

Author(s): Yan, S (Yan, S.); Yan, X (Yan, X.); Yu, H (Yu, H.); Zhang, L (Zhang, L.); Guo, L (Guo, L.); Sun, W (Sun, W.); Hou, W (Hou, W.); Lin, X (Lin, X.)

Source: LASER PHYSICS Volume: 23 Issue: 7 Article Number: 075302 DOI: 10.1088/1054-660X/23/7/075302 Published: JUL 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We present a high power 880 nm diode-pumped passively mode-locked Nd:YVO4 oscillator, followed by an 880 nm diode-pumped Nd:YVO4 amplifier. In the oscillator, a maximum power of 8.7 W was obtained with a repetition rate of 63 MHz and pulse duration of 32 ps, corresponding to an optical efficiency of 36%. The beam quality factors M-2 were measured to be M-x(2) = 1.2 and M-y(2) = 1.19, respectively. The amplifier generated up to 19.1 W output power with the pulse width and repetition rate remaining unaltered after amplification.

Addresses: [Yan, S.; Yan, X.; Yu, H.; Zhang, L.; Guo, L.; Sun, W.; Hou, W.; Lin, X.] Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing 100083, Peoples R China.

Reprint Address: Yan, S (reprint author), Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing 100083, Peoples R China.

E-mail Addresses: xclin@semi.ac.cn

ISSN: 1054-660X

Record 207 of 495

Title: ULTRAFAST ELECTRON SPIN DYNAMICS OF AS-GROWN Ga1-xMnxAs WITH APPROPRIATE Mn DOPING

Author(s): Yue, H (Yue, Han)

Source: MODERN PHYSICS LETTERS B Volume: 27 Issue: 16 Article Number: 1350124 DOI: 10.1142/S0217984913501248 Published: JUN 30 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The electron spin dynamics in the as-grown Ga1-xMnxAs films with appropriate Mn doping of x similar to 2-5% is studied using time-resolved magneto-optical Kerr effect measurements. Due to the existence of Mn interstitials, the s-d exchange scattering is found to play an important role for the as-grown Ga1-xMnxAs, and compete with p-d exchange coupling to dominate the electron spin relaxation process. The contribution of electron-electron Coulomb scattering to the electron spin dynamics for the as-grown Ga1-xMnxAs appears to be as important as that of the annealed ones. Our findings are fundamentally important for better understanding the electron spin dynamics in Ga1-xMnxAs for its future spintronic applications.

Addresses: Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Yue, H (reprint author), Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yuehan@semi.ac.cn

ISSN: 0217-9849

Record 208 of 495

Title: Shape designing for light extraction enhancement bulk-GaN light-emitting diodes

Author(s): Sun, B (Sun, Bo); Zhao, LX (Zhao, Lixia); Wei, TB (Wei, Tongbo); Yi, XY (Yi, Xiaoyan); Liu, ZQ (Liu, Zhiqiang); Wang, GH (Wang, Guohong); Li, JM (Li, Jinmin)

Source: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 24 Article Number: 243104 DOI: 10.1063/1.4812464 Published: JUN 28 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Light extraction efficiency enhancement of bulk GaN light-emitting diodes (LEDs) in the shape of truncated-pyramid has been investigated. Compared with the reference LEDs, an enhancement of up to 46% on the light output power from rectangle-shaped LEDs chip with the inclination angle (similar to 44 degrees) has been observed. Compared with the common triangle-shaped and hexagon-shaped LEDs, large size of conventional rectangular LEDs shaped with truncated-pyramid shows more obvious enhancement in light extraction efficiency. In addition, the ray-tracing simulations results show that light extraction efficiency was influenced not only by inclination angle but also by dimension size. (C) 2013 AIP Publishing LLC.

Addresses: [Sun, Bo; Zhao, Lixia; Wei, Tongbo; Yi, Xiaoyan; Liu, Zhiqiang; Wang, Guohong; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

[Sun, Bo] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

Reprint Address: Sun, B (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: lxzhao@semi.ac.cn; tbwei@semi.ac.cn

ISSN: 0021-8979
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Record 209 of 495

Title: Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar n-Type GaN

Author(s): Wang, LC (Wang, Liancheng); Liu, ZQ (Liu, Zhiqiang); Guo, EQ (Guo, Enqing); Yang, H (Yang, Hua); Yi, XY (Yi, Xiaoyan); Wang, GH (Wang, Guohong)

Source: ACS APPLIED MATERIALS & INTERFACES Volume: 5 Issue: 12 Pages: 5797-5803 DOI: 10.1021/am401354z Published: JUN 26 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The electrical characteristics of metallization contacts to flat (F-sample, without wet-etching roughed) and wet-etching roughed (R-sample) N-polar (Nitrogen-polar) n-GaN have been investigated. R-sample shows higher contact resistance (R-c) to Al/Ti/Au (similar to 2.5 x 10(-5) Omega.cm(2)) and higher Schottky barriers height (SBH, similar to 0.386 eV) to Ni/Au, compared with that of F-sample (similar to 1.3 x 10(-6) Omega.cm(2), similar to 0.154 eV). Reasons accounting for this discrepancy has been detail investigated and discussed: for R-sample, wet-etching process caused surface state and spontaneous polarization variation will degraded its electrical characteristics. Metal on R-sample shows smoother morphology, however, the effect of metal deposition state on electrical characteristics is negligible. Metallization contact area for both samples has also been further considered. Electrical characteristics of metallization contact to both samples show degradation upon annealing. The VLED chip (1 mm x 1 mm), which was fabricated on the basis of a hybrid scheme, coupling the advantage of F- and R-sample, shows the lowest forward voltage (2.75 V@350 mA) and the highest light output power.

Addresses: [Wang, Liancheng; Liu, Zhiqiang; Guo, Enqing; Yang, Hua; Yi, Xiaoyan; Wang, Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

Reprint Address: Wang, LC (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: wanglc@semi.ac.cn; spring@semi.ac.cn

ISSN: 1944-8244

Record 210 of 495

Title: In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces

Author(s): Wu, SJ (Wu, Shujie); Chen, YH (Chen, Yonghai); Yu, JL (Yu, Jinling); Gao, HS (Gao, Hansong); Jiang, CY (Jiang, Chongyun); Huang, JL (Huang, Jianliang); Zhang, YH (Zhang, Yanhua); Wei, Y (Wei, Yang); Ma, WQ (Ma, Wenquan)

Source: NANOSCALE RESEARCH LETTERS Volume: 8 Article Number: 298 DOI: 10.1186/1556-276X-8-298 Published: JUN 25 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The in-plane optical anisotropy (IPOA) in InAs/GaSb superlattices has been studied by reflectance difference spectroscopy (RDS) at different temperatures ranging from 80 to 300 K. We introduce alternate GaAs- and InSb-like interfaces (IFs), which cause the symmetry reduced from D (2d) to C (2v) . IPOA has been observed in the (001) plane along [110] and [10] axes. RDS measurement results show strong anisotropy resonance near critical point (CP) energies of InAs and GaSb. The energy positions show red shift and RDS intensity decreases with the increasing temperature. For the superlattice sample with the thicker InSb-like IFs, energy positions show red shift, and the spectra exhibit stronger IPOA. The excitonic effect is clearly observed by RDS at low temperatures. It demonstrates that biaxial strain results in the shift of the CP energies and IPOA is enhanced by the further localization of the carriers in InSb-like IFs.