Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Addresses: [AlMulla, Mohammad; Liu, Jia-Ming] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA.

[Qi, Xiao-Qiong] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: AlMulla, M (reprint author), Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA.

E-mail Addresses: almulla@ucla.edu; qixiaqiong2002@yahoo.com.cn

ISSN: 1077-260X
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Record 186 of 495

Title: Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer

Author(s): Feng, MX (Feng, Mei-Xin); Liu, JP (Liu, Jian-Ping); Zhang, SM (Zhang, Shu-Ming); Jiang, DS (Jiang, De-Sheng); Li, ZC (Li, Zeng-Cheng); Li, DY (Li, De-Yao); Zhang, LQ (Zhang, Li-Qun); Wang, F (Wang, Feng); Wang, H (Wang, Hui); Yang, H (Yang, Hui)

Source: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Volume: 19 Issue: 4 Article Number: 1500705 DOI: 10.1109/JSTQE.2012.2237015 Published: JUL-AUG 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Effects of an inserted InGaN interlayer between active region and p-AlGaN electron blocking layer on electrical and optical characteristics of GaN-based blue laser diodes are numerically investigated. It is found that the inserted InGaN interlayer reduces the barrier height for hole injection into multiple quantum wells. Moreover, it is found that the background electron concentration of the undoped InGaN plays a critical role in the LD performance. A background electron concentration higher than 1 x 10(17) cm(-3) may induce undesired electron-hole recombination in this layer. In addition, we have calculated the dependences of optical confinement factor and internal absorption loss (IAL) on location, In composition, and thickness of the InGaN layer. A significant increase in OCF and a decrease in IAL are obtained by inserting the InGaN layer.

Addresses: [Feng, Mei-Xin; Liu, Jian-Ping; Zhang, Shu-Ming; Li, Zeng-Cheng; Li, De-Yao; Zhang, Li-Qun; Wang, Feng; Wang, Hui; Yang, Hui] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

[Feng, Mei-Xin; Liu, Jian-Ping; Zhang, Shu-Ming; Li, Zeng-Cheng; Li, De-Yao; Zhang, Li-Qun; Wang, Feng; Wang, Hui; Yang, Hui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

[Feng, Mei-Xin; Jiang, De-Sheng] Chinese Acad Sci, Inst Semicond, Beijing 100803, Peoples R China.

Reprint Address: Feng, MX (reprint author), Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

E-mail Addresses: jpliu2010@sinano.ac.cn; smzhang2010@sinano.ac.cn

ISSN: 1077-260X

Record 187 of 495

Title: Mode Analysis for Unidirectional Emission AlGaInAs/InP Octagonal Resonator Microlasers

Author(s): Zou, LX (Zou, Ling-Xiu); Lv, XM (Lv, Xiao-Meng); Huang, YZ (Huang, Yong-Zhen); Long, H (Long, Heng); Xiao, JL (Xiao, Jin-Long); Yao, QF (Yao, Qi-Feng); Lin, JD (Lin, Jian-Dong); Du, Y (Du, Yun)

Source: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Volume: 19 Issue: 4 Article Number: 1501808 DOI: 10.1109/JSTQE.2013.2244566 Published: JUL-AUG 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: We investigate mode characteristics for octagonal resonator microlasers directly connecting an output waveguide. The threshold current of 8 mA at 286 K and single-transverse-mode operation are realized for an octagonal resonator microlaser with a side length of 10.8 mu m and a 2-mu m-wide vertex output waveguide. The laser spectra of multiple longitudinal modes with mode wavelength intervals of 7-8 nm are observed accompanied with three weak, higher order transverse modes. Furthermore, blueshift of mode wavelength versus the injection current around the threshold current and the far-field patterns are measured and discussed. In addition, the mode characteristics of the octagonal microresonators are simulated by the two-dimensional finite-difference time-domain technique. Two sets of high-Q longitudinal modes are observed experimentally and numerically, for the octagonal resonators with the output waveguide connected to the vertex and the midpoint of one side of the resonators, respectively.

Addresses: [Zou, Ling-Xiu; Lv, Xiao-Meng; Huang, Yong-Zhen; Long, Heng; Xiao, Jin-Long; Yao, Qi-Feng; Lin, Jian-Dong; Du, Yun] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zou, LX (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: zoulingxiu@semi.ac.cn; lvxiaomeng@semi.ac.cn; yzhuang@semi.ac.cn; longheng@semi.ac.cn; jlxiao@mail.semi.ac.cn; qifengyao@semi.ac.cn; linjiandong@semi.ac.cn; duyun@semi.ac.cn

ISSN: 1077-260X

Record 188 of 495

Title: Texture Evolution and Grain Competition in NiGe Film on Ge(001)

Author(s): Huang, W (Huang, Wei); Tang, MR (Tang, Mengrao); Wang, C (Wang, Chen); Li, C (Li, Cheng); Li, J (Li, Jun); Chen, SY (Chen, Songyan); Xue, CL (Xue, Chunlai); Lai, HK (Lai, Hongkai)

Source: APPLIED PHYSICS EXPRESS Volume: 6 Issue: 7 Article Number: 075505 DOI: 10.7567/APEX.6.075505 Published: JUL 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: To understand the agglomeration mechanism of NiGe films grown on Ge(001), texture structures of NiGe films are revealed by X-ray pole figure measurement. Two preferred epitaxial orientations of the NiGe grains are identified to be NiGe(4 (5) over bar4) II Ge(001) NiGe[(1) over bar 01] II Ge[110] and NiGe(130) II Ge(001) NiGe[002] II Ge[110]. The component of the first epitaxial alignment becomes dominating and the latter diminishing with increasing annealing temperature. The NiGe grains of the second epitaxial alignment are unstable and diminishing at high temperature due to the relatively higher interface/surface energy. The competition of grains with various epitaxial orientations has made a significant contribution to film agglomeration. (C) 2013 The Japan Society of Applied Physics

Addresses: [Huang, Wei; Tang, Mengrao; Wang, Chen; Li, Cheng; Li, Jun; Chen, Songyan; Lai, Hongkai] Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China.

[Xue, Chunlai] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Huang, W (reprint author), Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China.

E-mail Addresses: weihuang@xmu.edu.cn

ISSN: 1882-0778
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Record 189 of 495

Title: Pyramid Array InGaN/GaN Core-Shell Light Emitting Diodes with Homogeneous Multilayer Graphene Electrodes

Author(s): Kang, JJ (Kang, Junjie); Li, Z (Li, Zhi); Li, HJ (Li, Hongjian); Liu, ZQ (Liu, Zhiqiang); Li, X (Li, Xiao); Yi, XY (Yi, Xiaoyan); Ma, P (Ma, Ping); Zhu, HW (Zhu, Hongwei); Wang, GH (Wang, Guohong)

Source: APPLIED PHYSICS EXPRESS Volume: 6 Issue: 7 Article Number: 072102 DOI: 10.7567/APEX.6.072102 Published: JUL 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Pyramid array InGaN/GaN core-shell light-emitting diodes (LEDs) were fabricated by using a highly homogeneous multilayer graphene transparent conducting electrode. This novel electrode exhibited excellent optical, structural, and electrical properties. In this design, graphene connected each pyramid array as a top window electrode. The current-driven pyramid array InGaN/GaN core-shell LED was operated at a low current injection and exhibited bright electroluminescence. Our results suggest that graphene offers excellent current spreading and transparent conductive properties for nano- or microscale devices. (c) 2013 The Japan Society of Applied Physics

Addresses: [Kang, Junjie; Li, Zhi; Li, Hongjian; Liu, Zhiqiang; Yi, Xiaoyan; Ma, Ping; Wang, Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

[Li, Xiao; Zhu, Hongwei] Tsinghua Univ, Dept Mech Engn, Key Lab Adv Mfg Mat Proc Technol, Beijing 100084, Peoples R China.

Reprint Address: Kang, JJ (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

ISSN: 1882-0778

Record 190 of 495

Title: Photoinduced Spin Precession in Fe/GaAs(001) Heterostructure with Low Power Excitation

Author(s): Yuan, HC (Yuan, Haochen); Gao, HX (Gao, Haixia); Gong, Y (Gong, Yu); Lu, J (Lu, Jun); Zhang, XH (Zhang, Xinhui); Zhao, JH (Zhao, Jianhua); Ren, YH (Ren, Yuhang); Zhao, HB (Zhao, Haibin); Chen, LY (Chen, Liangyao)

Source: APPLIED PHYSICS EXPRESS Volume: 6 Issue: 7 Article Number: 073008 DOI: 10.7567/APEX.6.073008 Published: JUL 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Pronounced spin precessions are observed in Fe films grown on n-doped GaAs(001) with a tailored Schottky interface under low-energy ultrafast laser excitation, more than two orders of magnitude smaller than typically required in heat-induced excitation. Pump wavelength dependence of the precession amplitude shows that the fast drift of the optically excited free carriers in the narrow depletion layer of GaAs is the key mechanism to generate the significant transient magnetic field triggering spin precessions. (C) 2013 The Japan Society of Applied Physics

Addresses: [Yuan, Haochen; Zhao, Haibin; Chen, Liangyao] Fudan Univ, Shanghai Ultra Precis Opt Mfg Engn Res Ctr, Shanghai 200433, Peoples R China.

[Yuan, Haochen; Zhao, Haibin; Chen, Liangyao] Fudan Univ, Key Lab Micro & Nano Photon Struct, Minist Educ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China.

[Gao, Haixia; Lu, Jun; Zhang, Xinhui; Zhao, Jianhua] Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Gong, Yu; Ren, Yuhang] CUNY Hunter Coll, Dept Phys & Astron, New York, NY 10065 USA.

Reprint Address: Ren, YH (reprint author), CUNY Hunter Coll, Dept Phys & Astron, New York, NY 10065 USA.

E-mail Addresses: yre@hunter.cuny.edu; hbzhao@fudan.edu.cn

ISSN: 1882-0778
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Record 191 of 495

Title: Femtosecond Laser Pulse Induced Ultrafast Demagnetization in Fe/GaAs Thin Films

Author(s): Gong, Y (Gong, Y.); Kutayiah, AR (Kutayiah, A. R.); Cevher, Z (Cevher, Z.); Zhang, XH (Zhang, X. H.); Zhao, JH (Zhao, J. H.); Ren, YH (Ren, Y. H.)

Source: IEEE TRANSACTIONS ON MAGNETICS Volume: 49 Issue: 7 Pages: 3199-3202 DOI: 10.1109/TMAG.2013.2240271 Published: JUL 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: As the magnetic storage density approaches 1 TB/in(2), a grand challenge is looming as how to read/write such a huge amount of data within a reasonable time. In this study, we demonstrate femtosecond demagnetization in 10-nm epitaxially grown Fe thin films by applying low-energy femtosecond laser pulses. We used time-resolved pump-probe Magneto Kerr Effect spectroscopy to record ultrafast laser induced demagnetization and its recovery. The demagnetization time was found to be 70 fs from the time-resolved hysteresis loops. The time scale is much shorter than the phonon thermalization time. Our results show that the demagnetization can be completed before electron-phonon equilibration is achieved, and therefore indicate the feasibility of ultrafast optical control of demagnetization responses for next generation femtosecond-switching magnetic storage devices.

Addresses: [Gong, Y.; Kutayiah, A. R.; Cevher, Z.; Ren, Y. H.] CUNY, Hunter Coll, New York, NY 10065 USA.

[Gong, Y.; Cevher, Z.; Ren, Y. H.] CUNY, Grad Ctr, New York, NY 10016 USA.

[Zhang, X. H.; Zhao, J. H.] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Gong, Y (reprint author), CUNY, Hunter Coll, New York, NY 10065 USA.

E-mail Addresses: ygong@hunter.cuny.edu

ISSN: 0018-9464

Record 192 of 495

Title: The research of the perpendicular magnetic anisotropy in CoFeB/AlOx/Ta and AlOx/CoFeB/Ta structures

Author(s): Chen, X (Chen Xi); Liu, HF (Liu Hou-Fang); Han, XF (Han Xiu-Feng); Ji, Y (Ji Yang)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 13 Article Number: 137501 DOI: 10.7498/aps.62.137501 Published: JUL 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The perpendicular magnetic anisotropy (PMA) of the CoFeB/AlOx/Ta structure and the AlOx/CoFeB/Ta structure with different thicknesses of both CoFeB and AlOx is studied. Magnetization curves show that the CoFeB/AlOx/Ta structure has a clear perpendicular magnetic easy axis while the AlOx/CoFeB/Ta structure does not. The cause of the asymmetrical phenomenon in the symmetric structures is analyzed. Dependence of the perpendicular coercivities on the thicknesses of CoFeB and AlOx shows that both of them can affect the strength of the PMA originating from the interfacial interaction. This work will be meaningful for the fabrication of the AlOx-based perpendicular magnetic tunnel junctions.

Addresses: [Chen Xi; Ji Yang] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Liu Hou-Fang; Han Xiu-Feng] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.

Reprint Address: Ji, Y (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: jiyang@semi.ac.cn

ISSN: 1000-3290
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Record 193 of 495

Title: Raman spectra of monoand bi-layer graphenes with ion-induced defects-and its dispersive frequency on the excitation energy

Author(s): Li, QQ (Li Qiao-Qiao); Han, WP (Han Wen-Peng); Zhao, WJ (Zhao Wei-Jie); Lu, Y (Lu Yan); Zhang, X (Zhang Xin); Tan, PH (Tan Ping-Heng); Feng, ZH (Feng Zhi-Hong); Li, J (Li Jia)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 13 Article Number: 137801 DOI: 10.7498/aps.62.137801 Published: JUL 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Raman spectroscopy has become a key way for characterizing and studying disorder in graphene, due to its nondestructive, rapid and sensitive technique. In this paper, ion implantation is used to produce the structural defects in single-layer graphene (SLG) and bi-layer graphene (BLG). The first-and second-order modes of ion-implanted SLG and BLG and their physical origins were studied by Raman spectroscopy. The dependence of dispersive frequency of first-and second-order modes in SLG and BLG on the excitation energy was discussed in detail. Results show that the similar to 2450 cm(-1) peak is the combination mode of the D mode at similar to 1350 cm(-1) and the D '' mode at similar to 1150 cm(-1).

Addresses: [Li Qiao-Qiao; Han Wen-Peng; Zhao Wei-Jie; Lu Yan; Zhang Xin; Tan Ping-Heng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Feng Zhi-Hong; Li Jia] Hebei Semicond Res Inst, Sci & Technol ASIC Lab, Shijiazhuang 050051, Peoples R China.

Reprint Address: Tan, PH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: phtan@semi.ac.cn

ISSN: 1000-3290
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Record 194 of 495

Title: Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

Author(s): Zeng, ZQ (Zeng, Zhaoquan); Morgan, TA (Morgan, Timothy A.); Fan, DS (Fan, Dongsheng); Li, C (Li, Chen); Hirono, Y (Hirono, Yusuke); Hu, X (Hu, Xian); Zhao, YF (Zhao, Yanfei); Lee, JS (Lee, Joon Sue); Wang, J (Wang, Jian); Wang, ZMM (Wang, Zhiming M.); Yu, SQ (Yu, Shuiqing); Hawkridge, ME (Hawkridge, Michael E.); Benamara, M (Benamara, Mourad); Salamo, GJ (Salamo, Gregory J.)

Source: AIP ADVANCES Volume: 3 Issue: 7 Article Number: 072112 DOI: 10.1063/1.4815972 Published: JUL 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Addresses: [Zeng, Zhaoquan; Morgan, Timothy A.; Fan, Dongsheng; Li, Chen; Hirono, Yusuke; Hu, Xian; Wang, Zhiming M.; Yu, Shuiqing; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J.] Univ Arkansas, Arkansas Inst Nanoscale Mat Sci & Engn, Fayetteville, AR 72701 USA.

[Fan, Dongsheng; Yu, Shuiqing] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA.

[Zhao, Yanfei; Wang, Jian] Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China.

[Lee, Joon Sue; Wang, Jian] Penn State Univ, Ctr Nanoscale Sci, University Pk, PA 16802 USA.

[Lee, Joon Sue; Wang, Jian] Penn State Univ, Dept Phys, University Pk, PA 16802 USA.

[Wang, Zhiming M.] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China.

[Wang, Zhiming M.] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

Reprint Address: Wang, J (reprint author), Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China.

E-mail Addresses: jianwangphysics@pku.edu.cn; zhmwang@semi.ac.cn

ISSN: 2158-3226

Record 195 of 495

Title: Selectable infiltrating large hollow core photonic band-gap fiber

Author(s): Liu, JG (Liu JianGuo); Du, YX (Du YuanXin); Zhu, NH (Zhu NingHua); Liu, FM (Liu FengMei)

Source: CHINESE SCIENCE BULLETIN Volume: 58 Issue: 21 Special Issue: SI Pages: 2606-2610 DOI: 10.1007/s11434-012-5549-5 Published: JUL 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: A selectable infiltrating large hollow core photonic band-gap fiber is fabricated with simple arc discharge technique. The offset, discharge duration, arc current and discharge times are optimized for selected sealing side air-holes but leave the central large air-hole partially open. The collapse length of the PCF is shortened by increasing the number of discharges and offset with discharge duration and arc current kept at a relatively low level. Light with the wavelength located at the photonic band-gap can still propagate while the central hollow air-hole is infiltrated with a kind of oil with refractive index of 1.30. The selectable infiltrating large hollow core photonic band-gap fiber has potential application for implementing novel lasers, sensors and tunable optoelectronic devices.

Addresses: [Liu JianGuo; Du YuanXin; Zhu NingHua] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Liu FengMei] Haidian Maternal & Child Hlth Hosp, Beijing 100080, Peoples R China.

Reprint Address: Liu, JG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: jgliu@semi.ac.cn

ISSN: 1001-6538
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Record 196 of 495

Title: High-sensitive and temperature-self-calibrated tilted fiber grating biological sensing probe

Author(s): Liu, F (Liu Fu); Guo, T (Guo Tuan); Liu, JG (Liu JianGuo); Zhu, XY (Zhu XiaoYang); Liu, Y (Liu Yu); Guan, BO (Guan BaiOu); Albert, J (Albert, Jacques)

Source: CHINESE SCIENCE BULLETIN Volume: 58 Issue: 21 Special Issue: SI Pages: 2611-2615 DOI: 10.1007/s11434-013-5724-3 Published: JUL 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: High sensitivity biological sample measurement has been achieved by using a 10A degrees tilted fiber Bragg grating sensing probe. Human acute leukemia cells with different intracellular densities were clearly discriminated by identifying their slight refraction index (RI) perturbations in the range from 1.3342 to 1.3344, combining with a temperature self-calibration property. We studied the relationship between the intracellular density of cells (S50 and S60) and their RIs, the experimental results provide a potential way to verify the hypothesis for "density alteration in non-physiological cells (DANCE)".

Addresses: [Liu Fu; Guo Tuan; Guan BaiOu] Jinan Univ, Inst Photon Technol, Guangzhou 510632, Guangdong, Peoples R China.

[Liu JianGuo] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Zhu XiaoYang; Liu Yu] Jinan Univ, Sch Med, Dept Biochem, Guangzhou 510632, Guangdong, Peoples R China.

[Albert, Jacques] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada.

Reprint Address: Guo, T (reprint author), Jinan Univ, Inst Photon Technol, Guangzhou 510632, Guangdong, Peoples R China.

E-mail Addresses: tuanguo@jnu.edu.cn

ISSN: 1001-6538
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Record 197 of 495

Title: Tween-modified suspension array for sensitive biomolecular detection

Author(s): Zhao, ZA (Zhao Zhuan); Li, Z (Li Zong); Li, J (Li Jiong)

Source: CHINESE SCIENCE BULLETIN Volume: 58 Issue: 21 Special Issue: SI Pages: 2628-2633 DOI: 10.1007/s11434-012-5299-4 Published: JUL 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Suspension arrays are attracting increasing interest for detecting and quantifying proteins, nucleic acids and other biomolecules. Among various suspension arrays, sillica-based suspension arrays which benefit from low fluorescence background and material stability have been widely used. Sillica-based suspension arrays are often manufactured with the popular aldehyde-aminosilane chemistry for the attachment of a variety of biomolecules. One drawback of this immobilization strategies is the relatively high array particles lost efficiency when washed by centrifugation. Due to this shortcoming, it is low reproductivity and limited in multiplex assay. Herein we report a novel method to fabricate Tween-coated suspension sillica particles, which could achieve good-reproductivity and the low limit of detection. Tween surfactants, each containing hydrophilic ethylene glycol head groups and a hydrophobic alkyl tail, prevent silica particles from being adsorbed onto the centrifuge tube wall and make beads resuspended well. Also, Tween with low fluorescence background could reduce non-specific protein adsorption. Also Tween surfactants are economic and facile agent. In this study, we demonstrate the preparation of the protein array to substantiate the applicability of our approach. Under the optimized experiment conditions, the limit of detection of our Tween-modified particles is as low as 50 pg/mL, which is sufficiently low for the current methods. We believe that the proposed method could provide a perspective on the improvement of self-encoded silica particle arrays.