Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Addresses: [Cai, Jiang-Tao] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Abliz, Ahmad] Xinjiang Normal Univ, Sch Phys & Elect Engn, Urumqi 830054, Peoples R China.

Reprint Address: Cai, JT (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jtcai@semi.ac.cn; exmetjan@yahoo.com

ISSN: 0378-4371
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Record 273 of 495

Title: Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

Author(s): Chen, G (Chen, G.); Li, ZL (Li, Z. L.); Wang, XQ (Wang, X. Q.); Huang, CC (Huang, C. C.); Rong, X (Rong, X.); Sang, LW (Sang, L. W.); Xu, FJ (Xu, F. J.); Tang, N (Tang, N.); Qin, ZX (Qin, Z. X.); Sumiya, M (Sumiya, M.); Chen, YH (Chen, Y. H.); Ge, WK (Ge, W. K.); Shen, B (Shen, B.)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 19 Article Number: 192109 DOI: 10.1063/1.4807131 Published: MAY 13 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 mu m) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 mu m by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m(2) which gave rise to blueshift of the ISBT wavelength and thus partially compensated its redshift with increasing well thickness. (C) 2013 AIP Publishing LLC.

Addresses: [Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Xu, F. J.; Tang, N.; Qin, Z. X.; Shen, B.] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China.

[Sang, L. W.; Sumiya, M.] Natl Inst Mat Sci NIMS, Opt & Elect Mat Unit, Tsukuba, Ibaraki 3050044, Japan.

[Chen, Y. H.] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Ge, W. K.] Tsinghua Univ, Dept Phys, Beijing 100871, Peoples R China.

Reprint Address: Chen, G (reprint author), Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China.

E-mail Addresses: wangshi@pku.edu.cn; bshen@pku.edu.cn

ISSN: 0003-6951
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Record 274 of 495

Title: Anomalous circular photogalvanic effect of the spin-polarized two-dimensional electron gas in Mg0.2Zn0.8O/ZnO heterostructures at room temperature

Author(s): Duan, JX (Duan, J. X.); Tang, N (Tang, N.); Ye, JD (Ye, J. D.); Mei, FH (Mei, F. H.); Teo, KL (Teo, K. L.); Chen, YH (Chen, Y. H.); Ge, WK (Ge, W. K.); Shen, B (Shen, B.)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 19 Article Number: 192405 DOI: 10.1063/1.4805079 Published: MAY 13 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A spin-related photocurrent with swirly distribution and anomalous dependence of the total spin-related photocurrent on the incident angle were observed on spin-polarized two-dimensional gas in a Mg0.2Zn0.8O/ZnO heterostructure under illumination of circular polarized light at room temperature. The ferromagnetic two-dimensional Rashba model was adopted to interpret the results. It is demonstrated that a radial spin current induced by the gradient of the spin-polarized electron density is the origin of the anomalousness. This spin current only exists in spin polarized systems. (C) 2013 AIP Publishing LLC.

Addresses: [Duan, J. X.; Tang, N.; Mei, F. H.; Ge, W. K.; Shen, B.] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China.

[Ye, J. D.] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China.

[Ye, J. D.] Australia Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia.

[Teo, K. L.] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore.

[Chen, Y. H.] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Ge, W. K.] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

Reprint Address: Duan, JX (reprint author), Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China.

E-mail Addresses: ntang@pku.edu.cn; bshen@pku.edu.cn

ISSN: 0003-6951
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Record 275 of 495

Title: 19 mu m quantum cascade infrared photodetectors

Author(s): Zhai, SQ (Zhai, Shen-Qiang); Liu, JQ (Liu, Jun-Qi); Wang, XJ (Wang, Xue-Jiao); Zhuo, N (Zhuo, Ning); Liu, FQ (Liu, Feng-Qi); Wang, ZG (Wang, Zhan-Guo); Liu, XH (Liu, Xi-Hui); Li, N (Li, Ning); Lu, W (Lu, Wei)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 19 Article Number: 191120 DOI: 10.1063/1.4807030 Published: MAY 13 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Two InP based InGaAs/InAlAs photovoltaic quantum cascade detectors operating at peak wavelengths of 18 mu m and 19 mu m using different electronic transport mechanisms are reported. A longitudinal optical phonon extraction stair combined with energy mini-steps are employed for electron transport, which suppresses the leakage current and results in high device resistance. Altogether, this quantum design leads to 15K peak responsivity of 2.34mA/W and Johnson noise limited detectivity of 1 x 10(11) Jones at 18 mu m. (C) 2013 AIP Publishing LLC.

Addresses: [Zhai, Shen-Qiang; Liu, Jun-Qi; Wang, Xue-Jiao; Zhuo, Ning; Liu, Feng-Qi; Wang, Zhan-Guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

[Liu, Xi-Hui; Li, Ning; Lu, Wei] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China.

Reprint Address: Zhai, SQ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jqliu@semi.ac.cn; fqliu@semi.ac.cn

ISSN: 0003-6951
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Record 276 of 495

Title: Surface plasmon resonance sensor based on spectral interferometry: numerical analysis

Author(s): Zhang, YF (Zhang, Yunfang); Li, H (Li, Hui); Duan, JY (Duan, Jingyuan); Shi, AC (Shi, Ancun); Liu, YL (Liu, Yuliang)

Source: APPLIED OPTICS Volume: 52 Issue: 14 Pages: 3253-3259 DOI: 10.1364/AO.52.003253 Published: MAY 10 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this paper, we introduce a numerical simulation of a phase detecting surface plasmon resonance (SPR) scheme based on spectral interference. Based on the simulation, we propose a method to optimize various aspects of SPR sensors, which enables better performance in both measurement range (MR) and sensitivity. In the simulation, four parameters including the spectrum of the broadband light source, incident angle, Au film thickness, and refractive index of the prism coupler are analyzed. The results show that it is a good solution for better performance to use a warm white broadband (625-800 nm) light source, a divergence angle of the collimated incident light less than 0.02 degrees, and an optimized 48 nm thick Au film when a visible broadband light source is used. If a near-IR light source is used, however, the Au film thickness should be somewhat thinner according the specific spectrum. In addition, a wider MR could be obtained if a prism coupler with higher refractive index is used. With all the parameters appropriately set, the SPR MR could be extended to 0.55 refractive index units while keeping the sensitivity at a level of 10(-8). (c) 2013 Optical Society of America

Addresses: [Zhang, Yunfang; Li, Hui; Duan, Jingyuan; Shi, Ancun; Liu, Yuliang] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

Reprint Address: Duan, JY (reprint author), Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

E-mail Addresses: zhangyf10@semi.ac.cn

ISSN: 1559-128X

Record 277 of 495

Title: GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

Author(s): Li, J (Li, Jie); Guo, H (Guo, Hao); Liu, J (Liu, Jun); Tang, J (Tang, Jun); Ni, HQ (Ni, Haiqiao); Shi, YB (Shi, Yunbo); Xue, CY (Xue, Chenyang); Niu, ZC (Niu, Zhichuan); Zhang, WD (Zhang, Wendong); Li, MF (Li, Mifeng); Yu, Y (Yu, Ying)

Source: NANOSCALE RESEARCH LETTERS Volume: 8 Article Number: 218 DOI: 10.1186/1556-276X-8-218 Published: MAY 8 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 x 10(-9) m(2)/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.

Addresses: [Li, Jie; Guo, Hao; Liu, Jun; Tang, Jun; Shi, Yunbo; Xue, Chenyang; Zhang, Wendong] North Univ China, Minist Educ, Key Lab Instrumentat Sci & Dynam Measurement, Taiyuan 030051, Shanxi, Peoples R China.

[Li, Jie; Guo, Hao; Liu, Jun; Tang, Jun; Shi, Yunbo; Xue, Chenyang; Zhang, Wendong] North Univ China, Sci & Technol Elect Test & Measurement Lab, Taiyuan 030051, Shanxi, Peoples R China.

[Ni, Haiqiao; Niu, Zhichuan; Li, Mifeng; Yu, Ying] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Tang, J (reprint author), North Univ China, Minist Educ, Key Lab Instrumentat Sci & Dynam Measurement, Taiyuan 030051, Shanxi, Peoples R China.

E-mail Addresses: tangjun@nuc.edu.cn

ISSN: 1931-7573

Record 278 of 495

Title: Multilayer silver nanoparticles for light trapping in thin film solar cells

Author(s): Shi, YP (Shi, Yanpeng); Wang, XD (Wang, Xiaodong); Liu, W (Liu, Wen); Yang, TS (Yang, Tianshu); Xu, R (Xu, Rui); Yang, FH (Yang, Fuhua)

Source: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 17 Article Number: 176101 DOI: 10.1063/1.4803676 Published: MAY 7 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this paper, a systematic design and analysis of thin film crystalline silicon solar cells incorporated with a new style of multilayer silver (Ag) nanoparticles (NPs) array is presented. Using numerical simulations, we showed that multilayer Ag NPs provide better light trapping than single layer Ag NPs when the Ag NPs are located on the rear of the solar cell. Furthermore, Ag NP double layers on the rear achieved the best light absorption enhancement for solar cells. Ag NP double layers showed a 6.65% increase in intergraded quantum efficiency across the solar spectrum compared with single layer structures. The parasitic absorption occurring in Ag NP bottom layers was also discussed. (C) 2013 AIP Publishing LLC.

Addresses: [Shi, Yanpeng; Wang, Xiaodong; Liu, Wen; Yang, Tianshu; Xu, Rui; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

Reprint Address: Shi, YP (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

E-mail Addresses: xdwang@semi.ac.cn; fhyang@semi.ac.cn

ISSN: 0021-8979

Record 279 of 495

Title: Observation of photo darkening in self assembled InGaAs/GaAs quantum dots

Author(s): Zhang, HY (Zhang, Hongyi); Chen, YH (Chen, Yonghai); Zhou, XL (Zhou, Xiaolong); Jia, YA (Jia, Yanan); Ye, XL (Ye, Xiaoling); Xu, B (Xu, Bo); Wang, ZG (Wang, Zhanguo)

Source: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 17 Article Number: 173508 DOI: 10.1063/1.4803683 Published: MAY 7 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous laser irradiation. The time constants varied from tens of minutes to several hours, depending on the applied laser power. Based on the spectral evolution, it was concluded that the observed phenomenon should originate from laser induced structural damage and a sustained increase of non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay dynamics at different laser powers, it is argued that there should exist other processes that hinder PL degradation at a high laser power. (C) 2013 AIP Publishing LLC.

Addresses: [Zhang, Hongyi] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Zhang, HY (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: hyzhang@semi.ac.cn

ISSN: 0021-8979
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Record 280 of 495

Title: Elastic properties of tetragonal BiFeO3 from first-principles calculations

Author(s): Dong, HF (Dong, Huafeng); Chen, CQ (Chen, Changqing); Wang, SY (Wang, Shanying); Duan, WH (Duan, Wenhui); Li, JB (Li, Jingbo)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 18 Article Number: 182905 DOI: 10.1063/1.4804641 Published: MAY 6 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Multiferroic BiFeO3 can exist in tetragonal G-type and C-type antiferromagnetic phases with a giant c/a ratio and polarizability. In this letter, the elastic constants cij's of these tetragonal BiFeO3 phases are studied as the function of pressure using first-principles density-functional theory. We find that, except for c(44), the predicted c(ij)'s decrease with decreasing pressure (or increasing volume). When the volume is less than 11 angstrom(3)/atom (or greater than 17 angstrom(3)/atom), the c(44) of these tetragonal phases tend to zero and the structures become unstable. The tetragonal phases are predicted to be softer than the rhombohedral antiferromagnetic phase. Other elastic properties, including bulk modulus, shear modulus, Young's modulus, Poisson's ratio, and elastic anisotropy ratios are also investigated. (C) 2013 AIP Publishing LLC.

Addresses: [Dong, Huafeng; Wang, Shanying; Duan, Wenhui] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

[Dong, Huafeng; Li, Jingbo] Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.

[Chen, Changqing] Tsinghua Univ, Dept Engn Mech, AML, Beijing 100084, Peoples R China.

[Chen, Changqing] Tsinghua Univ, CNMM, Beijing 100084, Peoples R China.

Reprint Address: Dong, HF (reprint author), Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

E-mail Addresses: jbli@semi.ac.cn

ISSN: 0003-6951
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Record 281 of 495

Title: Saturation of the junction voltage in GaN-based laser diodes

Author(s): Feng, MX (Feng, M. X.); Liu, JP (Liu, J. P.); Zhang, SM (Zhang, S. M.); Liu, ZS (Liu, Z. S.); Jiang, DS (Jiang, D. S.); Li, ZC (Li, Z. C.); Wang, F (Wang, F.); Li, DY (Li, D. Y.); Zhang, LQ (Zhang, L. Q.); Wang, H (Wang, H.); Yang, H (Yang, H.)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 18 Article Number: 183509 DOI: 10.1063/1.4804384 Published: MAY 6 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Saturation of the junction voltage in GaN-based laser diodes (LDs) is studied. It is found that there is a bump above the lasing transition in the I(dV/dI)-I curve, instead of a dip as that for GaAs-based LDs. The bump in I(dV/dI)-I curve moves to higher currents along with the lasing threshold. A model considering ambipolar conduction and electron overflow into p-AlGaN cladding layer due to poor carrier confinement in active region is used to explain the anomaly. The characteristic temperature of GaN-based LD is obtained by fitting threshold currents determined from I(dV/dI)-I curves. Moreover, it is found that GaN-based LDs show characteristics with a nonlinear series resistance, which may be due to the electron overflow into p-AlGaN cladding layer and the enhanced activation of Mg acceptors. (C) 2013 AIP Publishing LLC.

Addresses: [Feng, M. X.; Liu, J. P.; Zhang, S. M.; Li, Z. C.; Wang, F.; Li, D. Y.; Zhang, L. Q.; Wang, H.; Yang, H.] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

[Feng, M. X.; Liu, J. P.; Zhang, S. M.; Li, Z. C.; Wang, F.; Li, D. Y.; Zhang, L. Q.; Wang, H.; Yang, H.] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

[Feng, M. X.; Liu, Z. S.; Jiang, D. S.; Yang, H.] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Liu, JP (reprint author), Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

E-mail Addresses: jpliu2010@sinano.ac.cn; smzhang2010@sinano.ac.cn

ISSN: 0003-6951

Record 282 of 495

Title: Multibistability and self-pulsation in nonlinear high-Q silicon microring resonators considering thermo-optical effect

Author(s): Zhang, LB (Zhang, Libin); Fei, YH (Fei, Yonghao); Cao, TT (Cao, Tongtong); Cao, YM (Cao, Yanmei); Xu, QY (Xu, Qingyang); Chen, SW (Chen, Shaowu)

Source: PHYSICAL REVIEW A Volume: 87 Issue: 5 Article Number: 053805 DOI: 10.1103/PhysRevA.87.053805 Published: MAY 6 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Optical bistability (BI) and self-pulsation (SP) in high-Q silicon microring resonators (MRRs) induced by thermo-optical (TO) effect and other nonlinear effects are theoretically studied with coupled mode theory and linear stability analysis method. It is found that the boundaries for both BI and SP are mainly restricted by two counteracting effects: free carrier dispersion effect and TO effect. If the refractive index changes of a MRR caused by these two effects are on the same order of magnitude, the output power will exhibit much more complicated dependence on the input power and wavelength, namely, input-power-dependent multi-BI and multi-SP regions will exist at certain input wavelength range. The controllability of multi-BI and multi-SP phenomena by the input power and input wavelength could be very useful in all-optical nonlinear devices.

Addresses: [Zhang, Libin; Fei, Yonghao; Cao, Tongtong; Cao, Yanmei; Xu, Qingyang; Chen, Shaowu] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Zhang, LB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: swchen@semi.ac.cn

ISSN: 1050-2947

Record 283 of 495

Title: PDECO: Parallel differential evolution for clusters optimization

Author(s): Chen, ZH (Chen, Zhanghui); Jiang, XW (Jiang, Xiangwei); Li, JB (Li, Jingbo); Li, SS (Li, Shushen); Wang, LW (Wang, Linwang)

Source: JOURNAL OF COMPUTATIONAL CHEMISTRY Volume: 34 Issue: 12 Pages: 1046-1059 DOI: 10.1002/jcc.23235 Published: MAY 5 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: The optimization of the atomic and molecular clusters with a large number of atoms is a very challenging topic. This article proposes a parallel differential evolution (DE) optimization scheme for large-scale clusters. It combines a modified DE algorithm with improved genetic operators and a parallel strategy with a migration operator to address the problems of numerous local optima and large computational demanding. Results of LennardJones (LJ) clusters and Gupta-potential Co clusters show the performance of the algorithm surpasses those in previous researches in terms of successful rate, convergent speed, and global searching ability. The overall performance for large or challenging LJ clusters is enhanced significantly. The average number of local minimizations per hit of the global minima for Co clusters is only about 34% of that in previous methods. Some global optima for Co are also updated. We then apply the algorithm to optimize the Pt clusters with Gupta potential from the size 3 to 130 and analyze their electronic properties by density functional theory calculation. The clusters with 13, 38, 54, 75, 108, and 125 atoms are extremely stable and can be taken as the magic numbers for Pt systems. It is interesting that the more stable structures, especially magic-number ones, tend to have a larger energy gap between the highest occupied molecular orbital and the lowest unoccupied molecular orbital. It is also found that the clusters are gradually close to the metal bulk from the size N > 80 and Pt38 is expected to be more active than Pt75 in catalytic reaction. (c) 2013 Wiley Periodicals, Inc.

Addresses: [Chen, Zhanghui; Jiang, Xiangwei; Li, Jingbo; Li, Shushen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Wang, Linwang] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.

Reprint Address: Chen, ZH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jbli@semi.ac.cn

ISSN: 0192-8651
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Record 284 of 495

Title: The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy

Author(s): Wan, XJ (Wan Xiao-Jia); Wang, XL (Wang Xiao-Liang); Xiao, HL (Xiao Hong-Ling); Wang, CM (Wang Cui-Mei); Feng, C (Feng Chun); Deng, QW (Deng Qing-Wen); Qu, SQ (Qu Shen-Qi); Zhang, JW (Zhang Jing-Wen); Hou, X (Hou Xun); Cai, SJ (Cai Shu-Jun); Feng, ZH (Feng Zhi-Hong)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 5 Article Number: 057101 DOI: 10.1088/0256-307X/30/5/057101 Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction is determined to be 0.13 +/- 0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of similar to 0.22 eV is obtained. The results indicate that the Al0.17Ga0.83N/GaN heterojunction exhibits a type-I band alignment.