Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Addresses: [Kong, Xin; Wei, Ke; Liu, Guoguo; Liu, Xinyu] Chinese Acad Sci, Inst Microelect, Microwave Devices & Integrated Circuits Dept, Beijing 100029, Peoples R China.

[Wang, Cuimei; Wang, Xiaoliang] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Liu, XY (reprint author), Chinese Acad Sci, Inst Microelect, Microwave Devices & Integrated Circuits Dept, Beijing 100029, Peoples R China.

E-mail Addresses: xyliu@ime.ac.cn

ISSN: 1882-0778
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Record 297 of 495

Title: Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well

Author(s): Li, HJ (Li, Hongjian); Li, PP (Li, Panpan); Kang, JJ (Kang, Junjie); Li, Z (Li, Zhi); Zhang, YY (Zhang, Yiyun); Li, ZC (Li, Zhicong); Li, J (Li, Jing); Yi, XY (Yi, Xiaoyan); Li, JM (Li, Jinmin); Wang, GH (Wang, Guohong)

Source: APPLIED PHYSICS EXPRESS Volume: 6 Issue: 5 Article Number: 052102 DOI: 10.7567/APEX.6.052102 Published: MAY 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: InGaN-based green light-emitting diodes (LEDs) with low-indium-composition shallow quantum well (SQW) inserted before the InGaN emitting layer are investigated theoretically and experimentally. Numerical simulation results show an increase of the overlap of electron-hole wave functions and a reduction of electrostatic field within the active region of the SQW LED, compared to those of the conventional LED. Photoluminescence (PL) measurements exhibit reduced full width at half maximum (FWHM) and increased PL intensity for the SQW LED. A 28.9% enhancement of output power at 150 mA for SQW LED chips of 256 x 300 mu m(2) size is achieved. (c) 2013 The Japan Society of Applied Physics

Addresses: [Li, Hongjian; Li, Panpan; Kang, Junjie; Li, Zhi; Zhang, Yiyun; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Li, Jinmin; Wang, Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D Ctr, Beijing 100083, Peoples R China.

[Zhang, Yiyun] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China.

Reprint Address: Li, HJ (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: semi_lihongjian@126.com

ISSN: 1882-0778
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Record 298 of 495

Title: Electron transport in a HgTe quantum spin Hall bar with periodic electric modulations

Author(s): Lin, LZ (Lin, Liang-Zhong); Cheng, F (Cheng, F.); Zhang, D (Zhang, D.); Lou, WK (Lou, Wen-Kai); Zhang, LB (Zhang, Le-Bo)

Source: SOLID STATE COMMUNICATIONS Volume: 161 Pages: 34-37 DOI: 10.1016/j.ssc.2013.02.023 Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We theoretically investigate the electron transport through a quantum spin Hall bar in the presence of periodic potential modulations. We find that the edge states show different behaviors for the periodic electric potential modulation in the proposed structures. The backscattering process can be controlled by tuning the electric potential modulation. Crown Copyright (C) 2013 Published by Elsevier Ltd. All rights reserved.

Addresses: [Lin, Liang-Zhong; Zhang, D.; Lou, Wen-Kai] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

[Cheng, F.] Changsha Univ Sci & Technol, Dept Phys & Elect Sci, Changsha 410004, Hunan, Peoples R China.

[Zhang, Le-Bo] Hunan Normal Univ, Dept Phys, Changsha 410012, Hunan, Peoples R China.

Reprint Address: Lin, LZ (reprint author), Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: lzlin@semi.ac.cn

ISSN: 0038-1098

Record 299 of 495

Title: Low-Temperature Quantum Transport Characteristics in Single n-Channel Junctionless Nanowire Transistors

Author(s): Li, XM (Li, Xiaoming); Han, WH (Han, Weihua); Ma, LH (Ma, Liuhong); Wang, H (Wang, Hao); Zhang, YB (Zhang, Yanbo); Yang, FH (Yang, Fuhua)

Source: IEEE ELECTRON DEVICE LETTERS Volume: 34 Issue: 5 Pages: 581-583 DOI: 10.1109/LED.2013.2250898 Published: MAY 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: A single n-channel junctionless nanowire transistor is fabricated and characterized for low-temperature quantum transport behavior. Transfer characteristics exhibit current oscillations below flat-band voltage (V-FB) up to temperature 75 K, possibly due to cotunneling through unintentional quantum dots. Furthermore, regular current steps are observed above VFB, that is, each current plateau corresponds to a fully populated subband. Experimental result of transconductance peaks indicates that the subband energy spacing in the 1-D channel agrees well with theoretical prediction.

Addresses: [Li, Xiaoming; Han, Weihua; Ma, Liuhong; Wang, Hao; Zhang, Yanbo; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China.

Reprint Address: Li, XM (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China.

E-mail Addresses: weihua@semi.ac.cn

ISSN: 0741-3106

Record 300 of 495

Title: Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

Author(s): Wang, LX (Wang, Lanxiang); Su, SJ (Su, Shaojian); Wang, W (Wang, Wei); Gong, X (Gong, Xiao); Yang, Y (Yang, Yue); Guo, PF (Guo, Pengfei); Zhang, GZ (Zhang, Guangze); Xue, CL (Xue, Chunlai); Cheng, BW (Cheng, Buwen); Han, GQ (Han, Genquan); Yeo, YC (Yeo, Yee-Chia)

Source: SOLID-STATE ELECTRONICS Volume: 83 Pages: 66-70 DOI: 10.1016/j.sse.2013.01.031 Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: High-mobility strained Ge0.958Sn0.042 p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide [(NH4)(2)S] surface passivation were demonstrated. A similar to 10 nm thick fully-strained single crystalline GeSn layer was epitaxially grown on Ge (1 0 0) substrate as the channel layer. (NH4)(2)S surface passivation was performed for the GeSn surface, followed by gate stack formation. Ge0.958Sn0.042 p-MOSFETs with (NH4)(2)S passivation show decent electrical characteristics and a peak effective mobility of 509 cm(2)/V s, which is the highest reported peak mobility obtained for GeSn channel p-MOSFETs so far. (c) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Wang, Lanxiang; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Han, Genquan; Yeo, Yee-Chia] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore.

[Wang, Lanxiang; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Han, Genquan; Yeo, Yee-Chia] Natl Univ Singapore, NUS Grad Sch Integrat Sci & Engn NGS, Singapore 117576, Singapore.

[Su, Shaojian; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Han, GQ (reprint author), Natl Univ Singapore, Dept Elect & Comp Engn, 10 Kent Ridge Crescent, Singapore 119260, Singapore.

E-mail Addresses: hangenquan@ieee.org; yeo@ieee.org

ISSN: 0038-1101

Record 301 of 495

Title: n-Si-p-Si1-xGex nanowire arrays for thermoelectric power generation

Author(s): Xu, B (Xu, Bin); Li, CB (Li, Chuanbo); Myronov, M (Myronov, Maksym); Fobelets, K (Fobelets, Kristel)

Source: SOLID-STATE ELECTRONICS Volume: 83 Pages: 107-112 DOI: 10.1016/j.sse.2013.01.038 Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The output power of a discrete assembly of n-Si-p-Si1-xGex (0 <= x <= 0.4) thermoelectric generators is measured as a function of load resistance. The influence of Ge content and nanowire structures on the performance of thermoelectric devices is evaluated in measurements around room temperature. The nanowire arrays are etched using a metal induced local oxidation and etching process, based on self-assembled Ag nanoparticles and HF. The use of nanowires and SiGe with dimensions smaller than 30 mu m, is beneficial for an improvement of, at least, a factor of 10 in the output power. However, better performance improvements can be obtained by optimising the thermal and electrical contact resistances at the interfaces. Optimisation of the electrical contact results in a performance boost by a factor of 25. (c) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Xu, Bin; Li, Chuanbo; Fobelets, Kristel] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7 2AZ, England.

[Li, Chuanbo] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Myronov, Maksym] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England.

Reprint Address: Li, CB (reprint author), Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, Exhibit Rd, London SW7 2AZ, England.

E-mail Addresses: cbli@semi.ac.cn; k.fobelets@imperial.ac.uk

ISSN: 0038-1101

Record 302 of 495

Title: Mode analysis for metal-coated nanocavity by three-dimensional S-matrix method

Author(s): Yao, QF (Yao, Qi-Feng); Huang, YZ (Huang, Yong-Zhen); Yang, YD (Yang, Yue-De); Zou, LX (Zou, Ling-Xiu); Lv, XM (Lv, Xiao-Meng); Long, H (Long, Heng); Xiao, JL (Xiao, Jin-Long); Guo, CC (Guo, Chu-Cai)

Source: JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS Volume: 30 Issue: 5 Pages: 1335-1341 DOI: 10.1364/JOSAB.30.001335 Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Three-dimensional scattering matrix method is proposed to investigate mode characteristics for metal-coated nanocavities, with the vertical waveguide structure of an active region confined by upper and lower cladding layers. For a nanocavity with radius of 800 nm, Q factors of well-confined modes with wavelength around 1550 nm first decrease with the increase of the metallic layer thickness due to the metallic absorption and the increase of radiation loss as the metallic layer thickness is less than 10 nm, and then rise with the increase of the metallic layer. However, for a weak confined nanocavity with a radius of 500 nm, the mode Q factor increases with the metallic layer thickness first, reaches a maximum value at an optimal metallic thickness, then decrease with the further increase of the metallic layer. For nanocavities confined by a thick metallic layer, the Q factors approach constants limited by the metallic absorption. However, mode field patterns, including the vertical field distributions, are affected by the metallic layer, which not only influences the metallic layer absorption but also the optical confinement factor in the active region. (C) 2013 Optical Society of America

Addresses: [Yao, Qi-Feng; Huang, Yong-Zhen; Yang, Yue-De; Zou, Ling-Xiu; Lv, Xiao-Meng; Long, Heng; Xiao, Jin-Long; Guo, Chu-Cai] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Huang, YZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yzhuang@semi.ac.cn

ISSN: 0740-3224

Record 303 of 495

Title: The quantification of quantum nonlocality by characteristic function

Author(s): Wen, W (Wen Wei)

Source: SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY Volume: 56 Issue: 5 Pages: 947-951 DOI: 10.1007/s11433-013-5045-1 Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We propose a way to measure the strength of quantum nonlocal correlation (QNC) based on the characteristic function, which is defined as a response function under the local quantum measurement in a composite system. It is found that the strength of QNC based on the characteristic function is a half-positive-definite function and does not change under any LU operation. Generally, we give a new definition for quantum entanglement using the strength function. Furthermore, we also give a separability-criterion for 2 x m-dimensional mixed real matrix. This paper proposes an alternative way for QNC further research.

Addresses: Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Wen, W (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: chuxiangzi@semi.ac.cn

ISSN: 1674-7348

Record 304 of 495

Title: Carrier-Induced Silicon Bragg Grating Filters With a p-i-n Junction

Author(s): Fang, Q (Fang, Qing); Song, JF (Song, Jun Feng); Tu, XG (Tu, Xiaoguang); Jia, LX (Jia, Lianxi); Luo, XS (Luo, Xianshu); Yu, MB (Yu, Mingbin); Lo, GQ (Lo, Guo Qiang)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 9 Pages: 810-812 DOI: 10.1109/LPT.2013.2252611 Published: MAY 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this letter, we present a carrier-induced silicon waveguide Bragg grating filter with a p-i-n junction. The carrier-induced Bragg grating is formed on the rib silicon waveguide by ion implantation technology. The bandwidth and the extinction ratio of the filter are 0.3 nm and 14 dB, respectively. It can be tuned by both forward and reverse biases. The central wavelength shifting rates under forward and reverse biases are 1.35 and 0.52 pm/V, respectively. The extinction ratio can also be tuned. At the forward bias of 1.5 V, the extinction ratio is reduced from 14 to 5 dB.

Addresses: [Fang, Qing; Song, Jun Feng; Tu, Xiaoguang; Jia, Lianxi; Luo, Xianshu; Yu, Mingbin; Lo, Guo Qiang] Agcy Sci Technol & Res, Inst Microelect, Singapore 117685, Singapore.

[Fang, Qing; Tu, Xiaoguang; Jia, Lianxi; Luo, Xianshu; Yu, Mingbin; Lo, Guo Qiang] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

[Song, Jun Feng] Jilin Univ, Coll Elect Sci & Engn, Changchun 100015, Jilin, Peoples R China.

Reprint Address: Fang, Q (reprint author), Agcy Sci Technol & Res, Inst Microelect, Singapore 117685, Singapore.

E-mail Addresses: fangq@ime.a-star.edu.sg; Songjf@ime.a-star.edu.sg; tux@ime.a-star.edu.sg; jialx@ime.a-star.edu.sg; luox@ime.a-star.edu.sg; mingbin@ime.a-star.edu.sg; logq@ime.a-star.edu.sg

ISSN: 1041-1135

Record 305 of 495

Title: Characteristics of GaN-Based High-Voltage LEDs Compared to Traditional High Power LEDs

Author(s): Zhan, T (Zhan, Teng); Zhang, Y (Zhang, Yang); Ma, J (Ma, Jun); Tian, T (Tian, Ting); Li, J (Li, Jing); Liu, ZQ (Liu, Zhiqiang); Yi, XY (Yi, Xiaoyan); Guo, JX (Guo, Jinxia); Wang, GH (Wang, Guohong); Li, JM (Li, Jinmin)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 9 Pages: 844-847 DOI: 10.1109/LPT.2013.2251878 Published: MAY 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this letter, GaN-based high-voltage light-emitting diodes (HV-LEDs) arrays with 16 microchips connected in series are fabricated. The light output power-current-voltage (LOP-I-V) characteristic of HV-LEDs is measured. Under input power of 1.1 W, the LOP of HV-LEDs is enhanced by 11.9% compared to traditional high power light-emitting diodes (THP-LEDs) with the same chip size. Due to the reduced metal shadow effect and better current spread, the HV-LEDs exhibit higher light extraction efficiency under the same current density, which is simulated by a 3-D ray tracing method. As a result, the luminous efficiency of HV-LEDs is 21.6% higher than that of THP-LEDs under input power of 1.1 W. Furthermore, the efficiency droop of HV-LEDs is reduced to half of that of THP-LEDs.

Addresses: [Zhan, Teng; Zhang, Yang; Ma, Jun; Tian, Ting; Li, Jing; Liu, Zhiqiang; Yi, Xiaoyan; Guo, Jinxia; Wang, Guohong; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

Reprint Address: Zhan, T (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: zhanteng10@semi.ac.cn; zhangy@semi.ac.cn; majun@semi.ac.cn; tianting@semi.ac.cn; lijing2006@semi.ac.cn; lzq@semi.ac.cn; spring@semi.ac.cn; guojinxia@semi.ac.cn; ghwang@red.semi.ac.cn; jmli@red.semi.ac.cn

ISSN: 1041-1135

Record 306 of 495

Title: High Efficiency Broadband Polarization Converter Based on Tapered Slot Waveguide

Author(s): Fei, YH (Fei, Yonghao); Zhang, LB (Zhang, Libin); Cao, TT (Cao, Tongtong); Cao, YM (Cao, Yanmei); Chen, SW (Chen, Shaowu)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 9 Pages: 879-881 DOI: 10.1109/LPT.2013.2254706 Published: MAY 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A novel high efficiency broadband polarization converter based on an adiabatic tapered vertical slot waveguide is proposed and analyzed. Unlike previously reported tapered polarization converters, this device converts the first-order TM/TE mode into the first-order TE/TM mode. The structure utilizes a vertical slot waveguide, which only needs a one-mask etching process. The bandwidth is ultrawide, similar to 100 nm (1500-1600 nm) with a conversion efficiency of > 98%. The total length of the polarization converter is 116 mu m, and its minimum fabrication tolerance is acceptable for modern nanofabrication technology.

Addresses: [Fei, Yonghao; Zhang, Libin; Cao, Tongtong; Cao, Yanmei; Chen, Shaowu] Chinese Acad Sci, State Key Lab Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Fei, YH (reprint author), Chinese Acad Sci, State Key Lab Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: feiyonghao@semi.ac.cn; zhanglibin@semi.ac.cn; ttcao@semi.ac.cn; ymeicao@semi.ac.cn; swchen@semi.ac.cn

ISSN: 1041-1135

Record 307 of 495

Title: Surface plasmon resonance enhanced ellipsometric analysis for monitoring of cobalt electrochemical reaction in solution

Author(s): Wang, ZZ (Wang, Zhenzhen); Liu, W (Liu, Wei); Wang, CX (Wang, Chunxia); Kan, Q (Kan, Qiang); Chen, S (Chen, She); Chen, HD (Chen, Hongda)

Source: SENSORS AND ACTUATORS B-CHEMICAL Volume: 181 Pages: 221-226 DOI: 10.1016/j.snb.2013.01.044 Published: MAY 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Cobalt-based ion selective electrode (ISE) is one of the key methods for phosphate detection. In this paper, surface plasmon resonance (SPR) enhanced ellipsometric analysis method has been used to monitor the electrochemical reaction process at Co ISE sensor surface and the mass consumption of sensitive electrode membranes. An Au-Co bilayer film is designed as optical detection interface. In order to obtain detectable reflection intensity variation with Co thickness, Au film and Co film thickness are optimized at TM polarization state. According to the calculation results, 50 nm Au film is formed on glass substrate by electron beam evaporation. Then cobalt film with thickness of about 20 nm is grown on gold film by electrochemical deposition method. Ellipsometric measurements were performed at SPR angle 59. The consuming process of Co film reacting with dissolved oxygen in deionized water has been obtained by monitoring the change of reflection intensity. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Wang, Zhenzhen; Wang, Chunxia; Kan, Qiang; Chen, Hongda] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Wang, Zhenzhen] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

[Liu, Wei; Chen, She] Chinese Acad Sci, Inst Mech, Dept Natl Micrograv Lab, Beijing 100083, Peoples R China.

Reprint Address: Wang, CX (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: cxwang@semi.ac.cn

ISSN: 0925-4005

Record 308 of 495

Title: Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

Author(s): Ji, D (Ji, Dong); Lu, YW (Lu, Yanwu); Liu, B (Liu, Bing); Liu, GP (Liu, Guipeng); Zhu, QS (Zhu, Qinsheng); Wang, ZG (Wang, Zhanguo)

Source: THIN SOLID FILMS Volume: 534 Pages: 655-658 DOI: 10.1016/j.tsf.2013.03.028 Published: MAY 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The two-dimensional electron gas (2DEG) mobility limited by dielectric and barrier thickness fluctuations (TF) scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors (HEMTs) is calculated. Calculation shows that thickness fluctuation scattering is the main limitation in Al2O3/AlGaN/GaN double heterojunction HEMTs with thin Al2O3 layer thicknesses. In addition, a study of 2DEG mobility as a function of 2DEG density, n(s), shows that TF scattering acts as the main limitation when ns exceeds 2 x 10(12) cm(-2). The results may be used to design HEMTs to obtain higher 2DEG mobilities by modulating the dielectric layer and barrier thicknesses or 2DEG density. (C) 2013 Elsevier B. V. All rights reserved.

Addresses: [Ji, Dong; Lu, Yanwu; Liu, Bing] Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R China.

[Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Lu, YW (reprint author), Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R China.

E-mail Addresses: ywlu@bjtu.edu.cn

ISSN: 0040-6090
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Record 309 of 495

Title: Strain Field Mapping of Dislocations in a Ge/Si Heterostructure

Author(s): Liu, QL (Liu, Quanlong); Zhao, CW (Zhao, Chunwang); Su, SJ (Su, Shaojian); Li, JJ (Li, Jijun); Xing, YM (Xing, Yongming); Cheng, BW (Cheng, Buwen)

Source: PLOS ONE Volume: 8 Issue: 4 Article Number: e62672 DOI: 10.1371/journal.pone.0062672 Published: APR 23 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HRTEM). The dislocations at the Ge/Si interface were identified to be 90 degrees full-edge dislocations, which are the most efficient way for obtaining a fully relaxed Ge film. The only defect found in the Ge epitaxial film was a 60 degrees dislocation. The nanoscale strain field of the dislocations was mapped by geometric phase analysis technique from the HRTEM image. The strain field around the edge component of the 60 degrees dislocation core was compared with those of the Peierls-Nabarro and Foreman dislocation models. Comparison results show that the Foreman model with a = 1.5 can describe appropriately the strain field around the edge component of a 60 degrees dislocation core in a relaxed Ge film on a Si substrate.