Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

[Wang, Xiaoliang; Zhang, Jingwen; Hou, Xun] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China.

Reprint Address: Lin, DF (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: xlwang@semi.ac.cn

ISSN: 1286-0042

Record 483 of 495

Title: Structural, elastic, electronic and dynamical properties of Ba2MgWO6 double perovskite under pressure from first principles

Author(s): Shi, LW (Shi, Liwei); Wu, L (Wu, L.); Duan, YF (Duan, Y. F.); Hu, J (Hu, J.); Yang, XQ (Yang, X. Q.); Tang, G (Tang, G.); Hao, LZ (Hao, L. Z.)

Source: EUROPEAN PHYSICAL JOURNAL B Volume: 86 Issue: 1 Article Number: 9 DOI: 10.1140/epjb/e2012-30584-1 Published: JAN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Ab initio calculations within the framework of density-functional theory employing the local density approximation have been performed to study the structural, elastic, electronic and dynamical properties for cubic double perovskite Ba2MgWO6 under hydrostatic pressure. The calculated ground-state properties and compression curve are in good agreement with the available experimental results. Pressure-induced enhancements of elastic constants, aggregate elastic moduli, elastic wave velocities and Debye temperature are observed, without any softening behaviors. Upon compression, the fundamental indirect energy gap E-g(Gamma-X) first increases slightly and then monotonically decreases. A linear-response approach is adopted to derive the full phonon-dispersion curves and phonon density of states. Evolution with pressure of the zone-center phonon frequencies for Raman-and infrared-active modes is analyzed. A pressure-induced soft optically silent T-1g phonon mode is identified near the Gamma point, signifying a structural dynamical instability. Our calculated results reveal that, when the pressure is high enough, besides bond shortening, the W-O-Mg bond becomes nonlinear, resulting in octahedral tilting distortion and thus a slight departure from the ideal cubic symmetry.

Addresses: [Shi, Liwei; Wu, L.; Duan, Y. F.; Hu, J.; Yang, X. Q.; Tang, G.] China Univ Min & Technol, Sch Sci, Dept Phys, Xuzhou 221116, Peoples R China.

[Shi, Liwei; Wu, L.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Hao, L. Z.] China Univ Petr, Fac Sci, Qingdao 266555, Peoples R China.

Reprint Address: Shi, LW (reprint author), China Univ Min & Technol, Sch Sci, Dept Phys, Xuzhou 221116, Peoples R China.

E-mail Addresses: liweishi@semi.ac.cn

ISSN: 1434-6028

Record 484 of 495

Title: XOR/XNOR directed logic circuit based on coupled-resonator-induced transparency

Author(s): Tian, YH (Tian, Yonghui); Zhang, L (Zhang, Lei); Xu, QF (Xu, Qianfan); Yang, L (Yang, Lin)

Source: LASER & PHOTONICS REVIEWS Volume: 7 Issue: 1 Pages: 109-113 DOI: 10.1002/lpor.201200036 Published: JAN 2013

Times Cited in Web of Science: 4

Total Times Cited: 4

Abstract: The coupled-resonator-induced transparency (CRIT) effect in parallel-coupled double microring resonators (MRRs) has been widely studied, and various applications based on the CRIT have been demonstrated. As an application of the CRIT, we propose and demonstrate a directed logic circuit that can implement the XOR and XNOR operations. Two electrical signals applied to the two MRRs represent the two operands of the logical operations, and the operational results are represented by the output optical signal. As a proof-of-concept, the thermo-optic modulating scheme is employed with an operational speed of 10 kbps.

Addresses: [Tian, Yonghui; Zhang, Lei; Yang, Lin] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Xu, Qianfan] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA.

Reprint Address: Yang, L (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: oip@semi.ac.cn

ISSN: 1863-8880
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Record 485 of 495

Title: Ag nanoparticles preparation and their light trapping performance

Author(s): Bai, YM (Bai YiMing); Wang, J (Wang Jun); Yin, ZG (Yin ZhiGang); Chen, NF (Chen NuoFu); Zhang, XW (Zhang XingWang); Fu, Z (Fu Zhen); Yao, JX (Yao JianXi); Li, N (Li Ning); He, HY (He HaiYang); Guli, MN (Guli MiNa)

Source: SCIENCE CHINA-TECHNOLOGICAL SCIENCES Volume: 56 Issue: 1 Pages: 109-114 DOI: 10.1007/s11431-012-5010-7 Published: JAN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Ag nanoparticles were fabricated on Si substrates by radio-frequency magnetron sputtering and thermal annealing treatments. It was found that Ag nanoparticles are ellipsoid at low annealing temperature, but the axis ratio decreases with the increase of annealing temperature, and a shape transformation from ellipsoid to sphere occurs when the temperature increases to a critical point. The experimental results showed that the surface plasmon resonances depend greatly on the nanoparticles'shape and size, which is in accordance with the theoretical calculation based on discrete dipole approximation. The results of forward-scattering efficiency (FSE) and light trapping spectrum (LTS) showed that Ag nanoparticles annealed at 400 degrees C could strongly enhance the light harvest than those annealed at 300 and 500 degrees C, and that the LTS peak intensity of the former is 1.7 and 1.5 times stronger than those of the later two samples, respectively. The conclusions obtained in this paper showed that Ag ellipsoid nanoparticles with appropriate size is more favorable for enhancing the light trapping.

Addresses: [Bai YiMing; Chen NuoFu; Yao JianXi; Li Ning; He HaiYang; Guli MiNa] N China Elect Power Univ, Sch Renewable Energy Engn, Beijing 102206, Peoples R China.

[Bai YiMing; Chen NuoFu; Yao JianXi; Guli MiNa] New & Renewable Energy Beijing Key Lab, Beijing 102206, Peoples R China.

[Bai YiMing; Yin ZhiGang; Chen NuoFu; Zhang XingWang; Fu Zhen] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang Jun] Chinese Acad Sci, Natl Engn Res Ctr Optoelect Devices, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Bai, YM (reprint author), N China Elect Power Univ, Sch Renewable Energy Engn, Beijing 102206, Peoples R China.

E-mail Addresses: ymbai@semi.ac.cn

ISSN: 1674-7321
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Record 486 of 495

Title: High Efficiency Grating Coupler for Coupling between Single-Mode Fiber and SOI Waveguides

Author(s): Zhang, C (Zhang Can); Sun, JH (Sun Jing-Hua); Xiao, X (Xiao Xi); Sun, WM (Sun Wei-Min); Zhang, XJ (Zhang Xiao-Jun); Chu, T (Chu Tao); Yu, JZ (Yu Jin-Zhong); Yu, YD (Yu Yu-De)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 1 Article Number: 014207 DOI: 10.1088/0256-307X/30/1/014207 Published: JAN 2013

Times Cited in Web of Science: 3

Total Times Cited: 3

Abstract: A high efficiency grating coupler between single-mode fiber and silicon-on-insulator waveguide is designed by a formula method. Over 78.5% coupling efficiency (>-1.05dB) with 3dB bandwidth about 50nm for one grating coupler is obtained experimentally and this result is the highest one as far as we know. This grating coupler is CMOS compatible which needs only one etch-step and is designed for a standard SOI chip without any Bragg reflector or bottom reflector.

Addresses: [Zhang Can; Sun Jing-Hua; Sun Wei-Min; Zhang Xiao-Jun] Harbin Engn Univ, Coll Sci, Harbin 150001, Peoples R China.

[Zhang Can; Xiao Xi; Chu Tao; Yu Jin-Zhong; Yu Yu-De] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Yu, YD (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: yudeyu@semi.ac.cn

ISSN: 0256-307X
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Record 487 of 495

Title: The thermal properties of AlGaAs/GaAs laser diode bars analyzed by the transient thermal technique

Author(s): Qiao, YB (Qiao, Yanbin); Feng, SW (Feng, Shiwei); Xiong, C (Xiong, Cong); Ma, XY (Ma, Xiaoyu); Zhu, H (Zhu, Hui); Guo, CS (Guo, Chunsheng); Wei, GH (Wei, Guanghua)

Source: SOLID-STATE ELECTRONICS Volume: 79 Pages: 192-195 DOI: 10.1016/j.sse.2012.07.007 Published: JAN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The thermal properties of AlGaAs/GaAs laser diode bars have been analyzed in detail by transient thermal technique based on the diode forward voltage method on the vertical and horizontal thermal conduction paths, respectively. On the vertical thermal conduction path, it is found that the steady-state temperature rise of the central emitter among operated emitters has a linear relationship with the logarithm of the total operating current. The time constant determined for chip decreases with the total operating current, while the time constant determined for solder/heat sink interface and package remains almost constant. In addition, the effective thermal diffusivity of chip increases with total operating current. On the horizontal thermal conduction path, the time constant varies linearly with the distance increasing, and the effective thermal diffusivity remains almost constant. The results suggest that the thermal crosstalk between emitters increases with the total operating current. (C) 2012 Elsevier Ltd. All rights reserved.

Addresses: [Qiao, Yanbin; Feng, Shiwei; Xiong, Cong; Zhu, Hui; Guo, Chunsheng; Wei, Guanghua] Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing, Peoples R China.

[Ma, Xiaoyu] Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, Beijing 100083, Peoples R China.

Reprint Address: Feng, SW (reprint author), Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing, Peoples R China.

E-mail Addresses: shwfeng@bjut.edu.cn

ISSN: 0038-1101
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Record 488 of 495

Title: Automatic Morphological Measurement of the Quantum Dots Based on Marker-Controlled Watershed Algorithm

Author(s): Xu, LL (Xu, Lulu); Lu, HX (Lu, Huaxiang)

Source: IEEE TRANSACTIONS ON NANOTECHNOLOGY Volume: 12 Issue: 1 Pages: 51-56 DOI: 10.1109/TNANO.2012.2229467 Published: JAN 2013

Times Cited in Web of Science: 0

Total Times Cited: 1

Abstract: In the field of material growth, the quantum dot (QD) image analysis is a fundamental tool. The main challenge is that such study is used to be made by nonautomatic procedures which are time consuming and subjective. We aim to implement an algorithm of automatic analysis of the QDs images. In this frame, efficient QDs segmentation is prerequisite. In this paper, a fast and robust method for the visual segmentation of QDs image based on marker-controlled watershed transform is proposed. According to the foreground markers and the boundary of the coarse partition, the watershed transform is utilized to accurately separate QDs. A next process is then implemented to filter the possible attached substrates based on the area-height distribution of the extracted QDs. Finally, almost all the QDs can be accurately and robustly extracted and thus their properties can be measured. The experimental results show that the proposed approach gives a good tradeoff between the easy usability and efficiency, execution time, and segmentation quality.

Addresses: [Xu, Lulu; Lu, Huaxiang] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Xu, LL (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: ll2lovely@semi.ac.cn; luhx@semi.ac.cn

ISSN: 1536-125X

Record 489 of 495

Title: Enhancement of the Curie temperature of ferromagnetic semiconductor (Ga,Mn)As

Author(s): Wang, HL (Wang HaiLong); Chen, L (Chen Lin); Zhao, JH (Zhao JianHua)

Source: SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY Volume: 56 Issue: 1 Special Issue: SI Pages: 99-110 DOI: 10.1007/s11433-012-4959-3 Published: JAN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this review article, we review the progress made in the past several years mainly regarding the efforts devoted to increasing the Curie temperature (T (C)) of (Ga,Mn)As, which is most widely considered as the prototype ferromagnetic semiconductor. Heavy Mn doping, nanostructure engineering and post-growth annealing which increase T (C) are described in detail.

Addresses: [Wang HaiLong; Chen Lin; Zhao JianHua] Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhao, JH (reprint author), Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: jhzhao@red.semi.ac.cn

ISSN: 1674-7348

Record 490 of 495

Title: Analysis of solar cells fabricated from UMG-Si purified by a novel metallurgical method

Author(s): Chen, T (Chen, Teng); Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Liu, T (Liu, Tong); Wang, J (Wang, Jun); Xie, H (Xie, Hui)

Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 28 Issue: 1 Article Number: 015024 DOI: 10.1088/0268-1242/28/1/015024 Published: JAN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this work, solar cells fabricated from 100% upgraded metallurgical grade (UMG) silicon refined by a novel metallurgical route have been investigated. Compared with Siemens mc-Si solar cells, the UMG mc-Si solar cells fabricated in the same process present higher open voltages and fill factors, together with low initial light-induced degradation due to the material properties. By secondary ion mass spectroscopy measurements, the UMG mc-Si solar cells show shallower and better single-side abrupt junctions, resulting in higher photoelectric conversion in the wave band from 400 nm to 750 nm as external quantum efficiency measurements demonstrated. Although higher impurity content limits the minority carrier diffusion length, leading to lower shot-circuit current density, the average efficiency of the UMG-Si solar cells fabricated in standard production line is up to 16.55%, close to 16.69% of the reference solar cells. Furthermore, by an additional phosphorous gettering process, the mean efficiency of the UMG-Si solar cells increases to 16.68%, and the reverse characteristics of the corresponding cells have been significantly improved.

Addresses: [Chen, Teng; Zhao, Youwen; Dong, Zhiyuan; Liu, Tong; Wang, Jun; Xie, Hui] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Chen, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: zhaoyw@semi.ac.cn

ISSN: 0268-1242

Record 491 of 495

Title: Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

Author(s): Ji, D (Ji, Dong); Lu, YW (Lu, Yanwu); Liu, B (Liu, Bing); Liu, GP (Liu, Guipeng); Zhu, QS (Zhu, Qinsheng); Wang, ZG (Wang, Zhanguo)

Source: SOLID STATE COMMUNICATIONS Volume: 153 Issue: 1 Pages: 53-57 DOI: 10.1016/j.ssc.2012.10.010 Published: JAN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Influences of the dielectric layer-induced interfacial charges on two-dimensional electron gases (2DEGs) are theoretical calculated in thin-barrier Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors (HEMTs). A decrease of 2DEG mobilities limited by three main scattering mechanisms, including misfit dislocation, threading dislocation and interface roughness scatterings, is observed with increasing value of the density of interfacial charges. The results in this article can be used to design structures to generate higher mobility in Al2O3/AlGaN/GaN double heterojunction HEMTs. (C) 2012 Elsevier Ltd. All rights reserved.

Addresses: [Ji, Dong; Lu, Yanwu; Liu, Bing] Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R China.

[Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Lu, YW (reprint author), Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R China.

E-mail Addresses: ywlu@bjtu.edu.cn

ISSN: 0038-1098
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Record 492 of 495

Title: A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-mu A threshold current and 80-mV SET voltage

Author(s): Fu, YC (Fu, Yingchun); Wang, XF (Wang, Xiaofeng); Zhang, JY (Zhang, Jiayong); Wang, XD (Wang, Xiaodong); Chang, C (Chang, Chun); Ma, HL (Ma, Huili); Cheng, KF (Cheng, Kaifang); Chen, XG (Chen, Xiaogang); Song, ZT (Song, Zhitang); Feng, SL (Feng, Songlin); Ji, A (Ji, An); Yang, FH (Yang, Fuhua)

Source: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Volume: 110 Issue: 1 Pages: 173-177 DOI: 10.1007/s00339-012-7083-3 Published: JAN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this paper,we fabricate a lateral phase change memory device composed of a Ge2Sb2Te5 nanowire (GST NW) fully confined in a tungsten electrode nanogap. A SiNx spacer is used not only as etch mask for the fabrication of the GST NW, but also as sacrificial layer for the lift-off process, which makes it feasible to fully confine the GST NW in the metal electrode nanogap. Electrical characterization shows that the device has unprecedentedly low threshold current and SET voltage of only 16 mu A and 80 mV, respectively.

Addresses: [Fu, Yingchun; Wang, Xiaofeng; Zhang, Jiayong; Wang, Xiaodong; Chang, Chun; Ma, Huili; Cheng, Kaifang; Ji, An; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

[Fu, Yingchun; Zhang, Jiayong; Ma, Huili; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Chen, Xiaogang; Song, Zhitang; Feng, Songlin] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China.

Reprint Address: Yang, FH (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

E-mail Addresses: ycfu@semi.ac.cn; fhyang@semi.ac.cn

ISSN: 0947-8396

Record 493 of 495

Title: Directed XOR/XNOR Logic Gates Using U-to-U Waveguides and Two Microring Resonators

Author(s): Tian, YH (Tian, Yonghui); Zhang, L (Zhang, Lei); Yang, L (Yang, Lin)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 1 Pages: 18-21 DOI: 10.1109/LPT.2012.2227307 Published: JAN 1 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: We propose and demonstrate a directed optical logic circuit, which can perform the XOR and XNOR logical operations based on U-to-U waveguides and two microring resonators. Compared to the previous structure, no waveguide crossings exist in the proposed circuit, which is beneficial to reduce the insertion loss and crosstalk of the device. Two electrical signals representing the two operands of the logical operation are employed to modulate two microring resonators through the thermo-optic effect, respectively. The operation result is represented by the output optical signal. For proof of principle, XOR and XNOR operations at 10 kb/s are demonstrated.

Addresses: [Tian, Yonghui; Zhang, Lei; Yang, Lin] Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Tian, YH (reprint author), Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: tianyh@semi.ac.cn; zhanglei@semi.ac.cn; lyang@semi.ac.cn

ISSN: 1041-1135

Record 494 of 495

Title: Polarization division multiplexed photonic radio-frequency channelizer using an optical comb

Author(s): Wang, LX (Wang, Li Xian); Zhu, NH (Zhu, Ning Hua); Li, W (Li, Wei); Wang, H (Wang, Hui); Zheng, JY (Zheng, Jian Yu); Liu, JG (Liu, Jian Guo)

Source: OPTICS COMMUNICATIONS Volume: 286 Pages: 282-287 DOI: 10.1016/j.optcom.2012.08.054 Published: JAN 1 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: A polarization division multiplexed photonic radio-frequency (RF) channelizer based on an optical comb is proposed and numerically investigated. A flat optical comb with nine lines is generated using two cascaded Mach-Zehnder modulators. The input broadband signal is simultaneously multicast by the optical comb and its frequency-shifted duplicate. These two combs are polarization multiplexed, spectrally sliced by a Fabry-Perot etalon (FPE), polarization de multiplexed and then channelized by wavelength division multiplexers (WDMs). The key advantage of the proposed approach is that it releases the trade-off between the measurement range and accuracy of a conventional optical comb based channelizer by a factor of 2. The impact of the polarization misalignment, the capability of monitoring multi-frequency RF signals with different powers and the reconfigurability of the system are also evaluated. (C) 2012 Elsevier B.V. All rights reserved.

Addresses: [Wang, Li Xian; Zhu, Ning Hua; Li, Wei; Wang, Hui; Zheng, Jian Yu; Liu, Jian Guo] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Wang, LX (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: lxwang@semi.ac.cn

ISSN: 0030-4018

Record 495 of 495

Title: Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for silicon solar cells

Author(s): Fan, YJ (Fan, Yujie); Han, PD (Han, Peide); Liang, P (Liang, Peng); Xing, YP (Xing, Yupeng); Ye, Z (Ye, Zhou); Hu, SX (Hu, Shaoxu)

Source: APPLIED SURFACE SCIENCE Volume: 264 Pages: 761-766 DOI: 10.1016/j.apsusc.2012.10.117 Published: JAN 1 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: In this paper, a series of comparative etching experiments on preparing inverted pyramids of silicon solar cells have been carried out using tetramethyl ammonium hydroxide (TMAH) and potassium hydroxide (KOH) at different etchant concentrations and temperatures on a patterned (1 0 0) Si. These experiment results show that TMAH solution has higher undercut rate and lower (1 0 0) plane etch rate than KOH solution, and the (1 1 1)/(1 0 0) etch rate ratio of TMAH is two to three times that of KOH solution. Additionally, etch rate of SiO2 mask is an order of magnitude lower in TMAH than in KOH. Besides, surface morphology analysis indicates that TMAH etching can obtain much higher quality inverted pyramids of sharp vertex, smooth (1 1 1) sidewall and uncontaminated surface than KOH etching, which makes TMAH etching samples show better antireflection properties. Finally, the minimum reflectivity of TMAH etching sample low as 1.8% is obtained for inverted pyramids covered with SiO2 reflectivity coating. So the study reveals that TMAH is more attractive for the preparation of inverted pyramids than KOH. (C) 2012 Elsevier B. V. All rights reserved.

Addresses: [Fan, Yujie; Han, Peide; Liang, Peng; Xing, Yupeng; Ye, Zhou; Hu, Shaoxu] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Fan, YJ (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, 35A Qinghua E Rd, Beijing 100083, Peoples R China.

E-mail Addresses: fanyujie@semi.ac.cn

ISSN: 0169-4332