Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Author(s): Li, YC (Li, Yanchen); Yu, S (Yu, Sheng); Meng, XQ (Meng, Xianquan); Liu, YH (Liu, Yihe); Zhao, YH (Zhao, Yonghe); Liu, FQ (Liu, Feng Qi); Wang, ZG (Wang, Zhanguo)

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 46 Issue: 21 Article Number: 215101 DOI: 10.1088/0022-3727/46/21/215101 Published: MAY 29 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The optical and magnetic properties of Eu-doped GaN prepared by ion implantation were reported and the effect of magnetic field on the photoluminescence (PL) behaviour was studied. The PL spectra show that the samples exhibit strong emission at around 622.0 nm. Magnetic measurement reveals ferromagnetic ordering at room temperature. There was an obvious correlation between the PL intensity and the external magnetic field. When external magnetic field of 1000 Oe was applied to the sample, a decrease of roughly 24% in the peak intensity at 622 nm was observed. The mechanics of the magnetic ordering-modulated light emission of rare-earth-doped GaN films is discussed. It may have applications in producing magneto-optical devices.

Addresses: [Li, Yanchen; Yu, Sheng; Meng, Xianquan; Liu, Yihe; Zhao, Yonghe] Wuhan Univ, Key Lab Artificial Micro & Nano Struct, Minist Educ, Wuhan 430072, Hubei, Peoples R China.

[Li, Yanchen; Yu, Sheng; Meng, Xianquan; Liu, Yihe; Zhao, Yonghe] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China.

[Meng, Xianquan; Liu, Feng Qi; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Li, YC (reprint author), Wuhan Univ, Key Lab Artificial Micro & Nano Struct, Minist Educ, Wuhan 430072, Hubei, Peoples R China.

E-mail Addresses: mengxq@whu.edu.cn

ISSN: 0022-3727

Record 261 of 495

Title: Ultrafine Sulfur Nanoparticles in Conducting Polymer Shell as Cathode Materials for High Performance Lithium/Sulfur Batteries

Author(s): Chen, HW (Chen, Hongwei); Dong, WL (Dong, Weiling); Ge, J (Ge, Jun); Wang, CH (Wang, Changhong); Wu, XD (Wu, Xiaodong); Lu, W (Lu, Wei); Chen, LW (Chen, Liwei)

Source: SCIENTIFIC REPORTS Volume: 3 Article Number: 1910 DOI: 10.1038/srep01910 Published: MAY 29 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: We report the synthesis of ultrafine S nanoparticles with diameter 10 similar to 20 nm via a membrane-assisted precipitation technique. The S nanoparticles were then coated with conducting poly (3,4-ethylenedioxythiophene) (PEDOT) to form S/PEDOT core/shell nanoparticles. The ultrasmall size of S nanoparticles facilitates the electrical conduction and improves sulfur utilization. The encapsulation of conducting PEDOT shell restricts the polysulfides diffusion, alleviates self-discharging and the shuttle effect, and thus enhances the cycling stability. The resulting S/PEDOT core/shell nanoparticles show initial discharge capacity of 1117 mAh g(-1) and a stable capacity of 930 mAh g(-1) after 50 cycles.

Addresses: [Chen, Hongwei; Dong, Weiling; Ge, Jun; Wang, Changhong; Wu, Xiaodong; Lu, Wei; Chen, Liwei] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion SINANO, i LAB, Suzhou 215123, Peoples R China.

[Chen, Hongwei] Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China.

[Dong, Weiling] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang, Changhong] Univ Sci & Technol China, Nano Sci & Technol Inst, Suzhou 215123, Peoples R China.

Reprint Address: Chen, LW (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion SINANO, i LAB, Suzhou 215123, Peoples R China.

E-mail Addresses: lwchen2008@sinano.ac.cn

ISSN: 2045-2322
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Record 262 of 495

Title: Interplay between edge and bulk states in silicene nanoribbon

Author(s): An, XT (An, Xing-Tao); Zhang, YY (Zhang, Yan-Yang); Liu, JJ (Liu, Jian-Jun); Li, SS (Li, Shu-Shen)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 21 Article Number: 213115 DOI: 10.1063/1.4808367 Published: MAY 27 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: We investigate the interplay between the edge and bulk states, induced by the Rashba spin-orbit coupling, in a zigzag silicene nanoribbon in the presence of an external electric field. The interplay can be divided into two kinds, one is the interplay between the edge and bulk states with opposite velocities, and the other is that with the same velocity direction. The former can open small direct spin-dependent subgaps. A spin-polarized current can be generated in the nanoribbon as the Fermi energy is in the subgaps. While the later can give rise to the spin precession in the nanoribbon. Therefore, the zigzag silicene nanoribbon can be used as an efficient spin filter and spin modulation device. (C) 2013 AIP Publishing LLC.

Addresses: [An, Xing-Tao] Hebei Univ Sci & Technol, Sch Sci, Shijiazhuang 050018, Hebei, Peoples R China.

[An, Xing-Tao; Zhang, Yan-Yang; Li, Shu-Shen] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

[Zhang, Yan-Yang] Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China.

[Liu, Jian-Jun] Shijiazhuang Univ, Dept Phys, Shijiazhuang 050035, Peoples R China.

Reprint Address: An, XT (reprint author), Hebei Univ Sci & Technol, Sch Sci, Shijiazhuang 050018, Hebei, Peoples R China.

E-mail Addresses: anxingtao@semi.ac.cn

ISSN: 0003-6951
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Record 263 of 495

Title: Helicity dependent photocurrent enabled by unpolarized radiation in a GaAs/Al0.3Ga0.7As two-dimensional electron system

Author(s): Ma, H (Ma, Hui); Jiang, CY (Jiang, Chongyun); Liu, Y (Liu, Yu); Yu, JL (Yu, Jinling); Chen, YH (Chen, Yonghai)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 21 Article Number: 212103 DOI: 10.1063/1.4808348 Published: MAY 27 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: We report the experimental observation of photo-assisted generation of helicity dependent photocurrents (PA-HDPC) in a GaAs/Al0.3Ga0.7As two-dimensional electron gas, which is distinct from the circular photogalvanic effect (CPGE). The PA-HDPC is generated under suppressed configuration of CPGE with the illumination of an obliquely incident unpolarized radiation in the system of C-2v point group symmetry. We suggest that the PA-HDPC originates from spin-orbit coupling as well as the CPGE. The unpolarized assisted radiation, instead of the circularly polarized radiation, imposes an asymmetric distribution of the spin-polarized carriers in the system and results in a helicity dependent photocurrent. (C) 2013 AIP Publishing LLC.

Addresses: [Ma, Hui] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Ma, H (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: mahui@semi.ac.cn; yhchen@semi.ac.cn

ISSN: 0003-6951
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Record 264 of 495

Title: Magnetic Silicon Nanotube: Role of Encapsulated Europium Atoms

Author(s): Li, J (Li, Jing); Wang, J (Wang, Jing); Zhao, HY (Zhao, Hui-Yan); Liu, Y (Liu, Ying)

Source: JOURNAL OF PHYSICAL CHEMISTRY C Volume: 117 Issue: 20 Pages: 10764-10769 DOI: 10.1021/jp401090p Published: MAY 23 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A europium-encapsulating silicon nanotube, Eu-2@Si-30, has been predicted by density functional theory. Electronic structure analysis shows that in Si Si chemical bonds there exist sp(2)-like hybridizations induced by the europium atoms, and the hybridizations evidently enhance the stability of the silicon nanotube. Moreover, the nanotube of Eu-2@Si-30, with D-sh symmetry, retains a high spin moment of 10 mu(B). On the basis of the Eu2Si30 Tube, a stable magnetic silicon nanotube (SiNT) was obtained, and it is found to be metallic. Similar to the predictions and speculation of Daedalus, the new magnetic SiNT may have potential applications in the fields of spintronics and high-density magnetic storage.

Addresses: [Li, Jing; Wang, Jing; Zhao, Hui-Yan; Liu, Ying] Hebei Normal Univ, Dept Phys, Shijiazhuang 050024, Hebei, Peoples R China.

[Li, Jing; Wang, Jing; Zhao, Hui-Yan; Liu, Ying] Hebei Normal Univ, Hebei Adv Thin Film Lab, Shijiazhuang 050024, Hebei, Peoples R China.

[Wang, Jing; Zhao, Hui-Yan; Liu, Ying] Natl Key Lab Mat Simulat & Design, Beijing 100083, Peoples R China.

[Li, Jing] Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Liu, Y (reprint author), Hebei Normal Univ, Dept Phys, Shijiazhuang 050024, Hebei, Peoples R China.

E-mail Addresses: yliu@hebtu.edu.cn

ISSN: 1932-7447
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Record 265 of 495

Title: Shock-induced brittle cracking in HVPE-GaN processed by laser lift-off techniques

Author(s): Su, XJ (Su, X. J.); Xu, K (Xu, K.); Xu, Y (Xu, Y.); Ren, GQ (Ren, G. Q.); Zhang, JC (Zhang, J. C.); Wang, JF (Wang, J. F.); Yang, H (Yang, H.)

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 46 Issue: 20 Article Number: 205103 DOI: 10.1088/0022-3727/46/20/205103 Published: MAY 22 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A study on brittle cracking in GaN films processed by laser lift-off is presented. Two kinds of cracks were found in the N-polar face of GaN after the laser lift-off process, namely perpendicular cracks along the {1-1 0 0} planes and lateral cracks along the (0 0 0-1) plane, respectively. Single-shot laser damage is studied to understand the cracking mechanism. The damage morphology indicates that the GaN material on the edge of the laser ablation area experiences three loading modes: shear stress P-S, longitudinal compressive stress P-L and transverse tensile stress P-T. Under shock P-L, lateral cracks likely appear and extend from the illuminated region along the interface in mode I. Furthermore, two different kinds of perpendicular cracks were found, namely shear cracks (PC I) and deflection cracks (PC II). A strong P-S gives rise to PC I while a cooperative action of P-L and P-T results in PC II. In addition, there exist a critical effective spot size d(Pth) and a critical ratio of the laser spot size d(L) to the effective spot size d(P), when cracks occur over them.

Addresses: [Su, X. J.; Xu, K.; Ren, G. Q.; Zhang, J. C.; Wang, J. F.; Yang, H.] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

[Yang, H.] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Xu, K.; Xu, Y.; Zhang, J. C.; Wang, J. F.; Yang, H.] Suzhou Nanowin Sci & Technol Co Ltd, Suzhou 215123, Peoples R China.

Reprint Address: Su, XJ (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

E-mail Addresses: kxu2006@sinano.ac.cn

ISSN: 0022-3727

Record 266 of 495

Title: Why twisting angles are diverse in graphene Moire patterns?

Author(s): Jiang, JW (Jiang, Jin-Wu); Wang, BS (Wang, Bing-Shen); Rabczuk, T (Rabczuk, Timon)

Source: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 19 Article Number: 194304 DOI: 10.1063/1.4805036 Published: MAY 21 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The interlayer energy of the twisting bilayer graphene is investigated by the molecular mechanics method using both the registry-dependent potential and the Lennard-Jones potential. Both potentials show that the interlayer energy is independent of the twisting angle theta, except in the two boundary regions theta approximate to 0 degrees or 60 degrees, where the interlayer energy is proportional to the square of the twisting arc length. The calculation results are successfully interpreted by a single atom model. An important information from our findings is that, from the energy point of view, there is no preference for the twisting angle in the experimental bilayer graphene samples, which actually explains the diverse twisting angles in the experiment. (C) 2013 AIP Publishing LLC.

Addresses: [Jiang, Jin-Wu; Rabczuk, Timon] Bauhaus Univ Weimar, Inst Struct Mech, D-99423 Weimar, Germany.

[Wang, Bing-Shen] Chinese Acad Sci, State Key Lab Semicond Superlattice & Microstruct, Beijing 100083, Peoples R China.

[Wang, Bing-Shen] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Rabczuk, Timon] Korea Univ, Sch Civil Environm & Architectural Engn, Seoul, South Korea.

Reprint Address: Jiang, JW (reprint author), Bauhaus Univ Weimar, Inst Struct Mech, Marienstr 15, D-99423 Weimar, Germany.

E-mail Addresses: timon.rabczuk@uni-weimar.de

ISSN: 0021-8979
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Record 267 of 495

Title: Intrinsic photoinduced anomalous Hall effect in insulating GaAs/AlGaAs quantum wells at room temperature

Author(s): Yu, JL (Yu, J. L.); Chen, YH (Chen, Y. H.); Liu, Y (Liu, Y.); Jiang, CY (Jiang, C. Y.); Ma, H (Ma, H.); Zhu, LP (Zhu, L. P.); Qin, XD (Qin, X. D.)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 20 Article Number: 202408 DOI: 10.1063/1.4807742 Published: MAY 20 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The photocurrent spectra of the inter-band photoinduced anomalous Hall effect (PAHE) in insulating GaAs/AlGaAs quantum wells have been observed at room temperature. The PAHE current changes linearly with the varied longitudinal electric fields. The anomalous Hall conductivity corresponding to excitonic state 1HH-1E (the first valence subband of heavy hole to the first conduction) has the same sign with that of excitonic state 1LH-1E (the first valence subband of light hole to the first conduction), while under uniaxial strain along the < 110 > axes, they have different signs. The PAHE current of 1HH-1E decreases linearly, but that of 1LH-1E increases linearly with shear strain. The linearly dependence of the PAHE current on uniaxial strain along the < 110 > axes suggests that the dominant mechanism is intrinsic, which has not yet been confirmed in our previous work. (C) 2013 AIP Publishing LLC.

Addresses: [Yu, J. L.; Chen, Y. H.; Liu, Y.; Jiang, C. Y.; Ma, H.; Zhu, L. P.; Qin, X. D.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Yu, JL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jlyu@semi.ac.cn; yhchen@semi.ac.cn

ISSN: 0003-6951

Record 268 of 495

Title: Single InAs quantum dot coupled to different "environments" in one wafer for quantum photonics

Author(s): Yu, Y (Yu, Ying); Shang, XJ (Shang, Xiang-Jun); Li, MF (Li, Mi-Feng); Zha, GW (Zha, Guo-Wei); Xu, JX (Xu, Jian-Xing); Wang, LJ (Wang, Li-Juan); Wang, GW (Wang, Guo-Wei); Ni, HQ (Ni, Hai-Qiao); Dou, XM (Dou, Xiuming); Sun, BQ (Sun, Baoquan); Niu, ZC (Niu, Zhi-Chuan)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 20 Article Number: 201103 DOI: 10.1063/1.4807502 Published: MAY 20 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Self assembled small InAs quantum dots (SQDs) were formed in various densities and environments using gradient InAs deposition on a non-rotating GaAs substrate. Two SQD environments (SQD I and SQD II) were characterized. SQD I featured SQDs surrounded by large QDs, and SQD II featured individual SQDs in the wetting layer (WL). Micro-photoluminescence of single QDs embedded in a cavity under various excitation powers and electric fields gave insight into carrier transport processes. Potential fluctuations of the WL in SQD II, induced by charge redistribution, show promise for charge-tunable QD devices; SQD I shows higher luminescence intensity as a single-photon source. (C) 2013 AIP Publishing LLC.

Addresses: [Yu, Ying; Shang, Xiang-Jun; Li, Mi-Feng; Zha, Guo-Wei; Xu, Jian-Xing; Wang, Li-Juan; Wang, Guo-Wei; Ni, Hai-Qiao; Dou, Xiuming; Sun, Baoquan; Niu, Zhi-Chuan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Yu, Y (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: zcniu@semi.ac.cn

ISSN: 0003-6951

Record 269 of 495

Title: Mach-Zehnder-based five-port silicon router for optical interconnects

Author(s): Li, XY (Li, Xianyao); Xiao, X (Xiao, Xi); Xu, H (Xu, Hao); Li, ZY (Li, Zhiyong); Chu, T (Chu, Tao); Yu, JZ (Yu, Jinzhong); Yu, YD (Yu, Yude)

Source: OPTICS LETTERS Volume: 38 Issue: 10 Pages: 1703-1705 DOI: 10.1364/OL.38.001703 Published: MAY 15 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: We propose and fabricate a five-port silicon optical router based on Mach-Zehnder interferometer switches. Only 10 switching elements and five low-loss waveguide crossings are required in our design. Through thermal control of the switching network, we successfully demonstrate 20 possible I/O paths of the five-port optical router at a data transmission rate of 32 Gb/s. The results here show great potential for application in ultrahigh-capacity optical interconnects. (C) 2013 Optical Society of America

Addresses: [Li, Xianyao; Xiao, Xi; Xu, Hao; Li, Zhiyong; Chu, Tao; Yu, Jinzhong; Yu, Yude] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Yu, YD (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yudeyu@semi.ac.cn

ISSN: 0146-9592

Record 270 of 495

Title: Sensitive refractive index sensing with good operation angle polarization tolerance using a plasmonic split-ring resonator array with broken symmetry

Author(s): Liu, JT (Liu, Jie-Tao); Xu, BZ (Xu, Bin-Zong); Xu, Y (Xu, Yun); Wei, X (Wei, Xin); Song, GF (Song, Guo-Feng)

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 46 Issue: 19 Article Number: 195104 DOI: 10.1088/0022-3727/46/19/195104 Published: MAY 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A localized plasmon resonance sensor consisting of an asymmetric split-ring resonator array sustaining highly localized field energy with high refractive index sensitivity and good figure of merit is demonstrated and investigated. In the proposed 3-cut split-ring resonator structure with broken symmetry, a highly tunable transmission with a large modulation depth and a narrow resonance linewidth is obtained, which shows polarization-insensitive and angle-independent properties. Numerical calculation results show that a high sensitivity of up to 1006 nm/RIU and a figure of merit of 9.7 can be reached. This plasmonic index sensor is practically obtainable, and is expected to have potential applications for high-sensitivity convenient and efficient detection.

Addresses: [Liu, Jie-Tao; Xu, Bin-Zong; Xu, Yun; Wei, Xin; Song, Guo-Feng] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Liu, JT (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: sgf@semi.ac.cn

ISSN: 0022-3727

Record 271 of 495

Title: Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy

Author(s): Zhou, K (Zhou, Kun); Liu, JP (Liu, Jianping); Zhang, SM (Zhang, Shuming); Li, ZC (Li, Zengcheng); Feng, MX (Feng, Meixin); Li, DY (Li, Deyao); Zhang, LQ (Zhang, Liqun); Wang, F (Wang, Feng); Zhu, JJ (Zhu, Jianjun); Yang, H (Yang, Hui)

Source: JOURNAL OF CRYSTAL GROWTH Volume: 371 Pages: 7-10 DOI: 10.1016/j.jcrysgro.2013.01.029 Published: MAY 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Hillocks on c-plane homoepitaxial GaN epilayers were investigated. They were observed on epilayers grown on [1 (1) over bar 00] direction miscut free-standing GaN substrates with miscut angle not larger than 0.2 degrees and were absent when substrate miscut angle increased to 0.4 degrees. Atomic force microscopy (AFM) and cathodoluminescence measurements reveal a close correlation between hillocks and dislocation clusters, while hillocks are absent on layers grown on GaN substrate free of dislocation clusters. We believe that the hillocks originate from spiral growth around dislocation clusters. Larger strain induced by dislocation accumulation may be responsible for the hillock formation around dislocation clusters. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Zhou, Kun; Li, Zengcheng; Feng, Meixin; Yang, Hui] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Zhou, Kun; Liu, Jianping; Zhang, Shuming; Li, Zengcheng; Feng, Meixin; Li, Deyao; Zhang, Liqun; Wang, Feng; Zhu, Jianjun; Yang, Hui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

[Zhou, Kun; Liu, Jianping; Zhang, Shuming; Li, Zengcheng; Feng, Meixin; Li, Deyao; Zhang, Liqun; Wang, Feng; Zhu, Jianjun; Yang, Hui] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

Reprint Address: Liu, JP (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

E-mail Addresses: jpliu2010@sinano.ac.cn

ISSN: 0022-0248

Record 272 of 495

Title: Tripartite correlations in a Heisenberg XXZ spin ring in thermal equilibrium

Author(s): Cai, JT (Cai, Jiang-Tao); Abliz, A (Abliz, Ahmad)

Source: PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS Volume: 392 Issue: 10 Pages: 2607-2614 DOI: 10.1016/j.physa.2013.01.041 Published: MAY 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Tripartite correlations are investigated at length by various witnesses such as tripartite negativity, genuine tripartite entanglement, total tripartite correlations and genuine tripartite correlations. Their behaviors following various tunable system parameters as well as their connections with quantum phase transitions (QPTs) in a three-qubit Heisenberg XXZ spin ring with three-spin interaction in thermal equilibrium are discussed. The results show that these tripartite correlation witnesses can faithfully detect the critical points associated with QPTs at zero temperature limit in this model. In addition, total tripartite correlations and genuine tripartite correlations can even signal critical points with respect to anisotropy Delta at finite low temperatures. (C) 2013 Elsevier B.V. All rights reserved.