Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Addresses: [Wu, Shujie; Chen, Yonghai; Yu, Jinling; Gao, Hansong; Jiang, Chongyun] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Wu, Shujie; Chen, Yonghai; Yu, Jinling; Gao, Hansong; Jiang, Chongyun] Chinese Acad Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Inst Semicond, Beijing 100083, Peoples R China.

[Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Ma, Wenquan] Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China.

Reprint Address: Chen, YH (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yhchen@semi.ac.cn

ISSN: 1931-7573

Record 211 of 495

Title: Controlling edge state transport in a HgTe topological insulator by superlattice effect

Author(s): Lin, LZ (Lin, L. -Z.); Cheng, F (Cheng, F.); Zhang, LB (Zhang, L. B.); Zhang, D (Zhang, D.); Yang, W (Yang, Wen)

Source: PHYSICAL REVIEW B Volume: 87 Issue: 24 Article Number: 245311 DOI: 10.1103/PhysRevB.87.245311 Published: JUN 24 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We investigate theoretically the edge state transport in a HgTe topological insulator under periodic electrical modulation. We find constructive interference of the backscattering amplitudes, leading to the formation of superlattice minigaps and hence complete suppression of the edge state transmission. Consequently, the edge channel can be switched on/off by appropriately tuning the modulation amplitude via gate voltages, even for wide Hall bar with a small finite size effect. We also find efficient conversion between spin-up and spin-down edge channels by the gate-induced Rashba spin-orbit interaction.

Addresses: [Lin, L. -Z.; Zhang, D.] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

[Cheng, F.] Changsha Univ Sci & Technol, Dept Phys & Elect Sci, Changsha 410004, Hunan, Peoples R China.

[Zhang, L. B.] Hunan Normal Univ, Dept Phys, Changsha 410012, Hunan, Peoples R China.

[Yang, Wen] Beijing Computat Sci Res Ctr, Beijing 100089, Peoples R China.

Reprint Address: Lin, LZ (reprint author), Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: lzlin@semi.ac.cn; wenyang@csrc.ac.cn

ISSN: 1098-0121
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Record 212 of 495

Title: The fabrication of GaN-based nanorod light-emitting diodes with multilayer graphene transparent electrodes

Author(s): Li, Z (Li, Zhi); Kang, JJ (Kang, Junjie); Zhang, YY (Zhang, Yiyun); Liu, ZQ (Liu, Zhiqiang); Wang, LC (Wang, Liancheng); Lee, X (Lee, Xiao); Li, X (Li, Xiao); Yi, XY (Yi, Xiaoyan); Zhu, HW (Zhu, Hongwei); Wang, GH (Wang, Guohong)

Source: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 23 Article Number: 234302 DOI: 10.1063/1.4811224 Published: JUN 21 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: GaN-based nanorod light-emitting diodes (LEDs) with multilayer graphene (MLG) transparent electrodes have been fabricated. Two types of nano-LEDs with graphene on and under the metal pads are fabricated and their performances are investigated. And LEDs with graphene on the metal-pads exhibiting lower forward voltage and higher electroluminescence intensity are obtained. Using scanning electron microscope and Raman spectroscopy, we have demonstrated that graphene transferred after the metal deposition remains intact and has much less damages than graphene under the metal during the fabrication of LEDs with nanorods. (C) 2013 AIP Publishing LLC.

Addresses: [Li, Zhi; Kang, Junjie; Zhang, Yiyun; Liu, Zhiqiang; Wang, Liancheng; Yi, Xiaoyan; Wang, Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

[Lee, Xiao; Li, Xiao; Zhu, Hongwei] Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China.

[Lee, Xiao; Zhu, Hongwei] Tsinghua Univ, CNMM, Beijing 100084, Peoples R China.

Reprint Address: Liu, ZQ (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: lzq@semi.ac.cn; hongweizhu@tsinghua.edu.cn

ISSN: 0021-8979

Record 213 of 495

Title: Growth temperature dependent structural and magnetic properties of epitaxial Co2FeAl Heusler alloy films

Author(s): Qiao, S (Qiao, Shuang); Nie, SH (Nie, Shuaihua); Zhao, JH (Zhao, Jianhua); Zhang, XH (Zhang, Xinhui)

Source: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 23 Article Number: 233914 DOI: 10.1063/1.4811688 Published: JUN 21 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: The structural and magnetic properties of a series of Co2FeAl Heusler alloy films grown on GaAs(001) substrate by molecular beam epitaxy have been studied. The epitaxial Co2FeAl films with an ordered L-21 structure have been successfully obtained at growth temperature of 433 K, with an in-plane cubic magnetic anisotropy superimposed with an unusual uniaxial magnetic anisotropy. With increasing growth temperature, the ordered L-21 structure degrades. Meanwhile, the uniaxial anisotropy decreases and eventually disappears above 673 K. The interfacial bonding between As and Co or Fe atom is suggested to be responsible for the additional uniaxial anisotropy. (C) 2013 AIP Publishing LLC.

Addresses: [Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Zhang, XH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: xinhuiz@semi.ac.cn

ISSN: 0021-8979

Record 214 of 495

Title: Design and experimental verification for optical module of optical vector-matrix multiplier

Author(s): Zhu, WW (Zhu, Weiwei); Zhang, L (Zhang, Lei); Lu, YY (Lu, Yangyang); Zhou, P (Zhou, Ping); Yang, L (Yang, Lin)

Source: APPLIED OPTICS Volume: 52 Issue: 18 Pages: 4412-4418 DOI: 10.1364/AO.52.004412 Published: JUN 20 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Optical computing is a new method to implement signal processing functions. The multiplication between a vector and a matrix is an important arithmetic algorithm in the signal processing domain. The optical vector-matrix multiplier (OVMM) is an optoelectronic system to carry out this operation, which consists of an electronic module and an optical module. In this paper, we propose an optical module for OVMM. To eliminate the cross talk and make full use of the optical elements, an elaborately designed structure that involves spherical lenses and cylindrical lenses is utilized in this optical system. The optical design software package ZEMAX is used to optimize the parameters and simulate the whole system. Finally, experimental data is obtained through experiments to evaluate the overall performance of the system. The results of both simulation and experiment indicate that the system constructed can implement the multiplication between a matrix with dimensions of 16 by 16 and a vector with a dimension of 16 successfully. (C) 2013 Optical Society of America

Addresses: [Zhu, Weiwei; Zhang, Lei; Lu, Yangyang; Zhou, Ping; Yang, Lin] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Yang, L (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: oip@semi.ac.cn

ISSN: 1559-128X

Record 215 of 495

Title: TiO2 modified FeS Nanostructures with Enhanced Electrochemical Performance for Lithium-Ion Batteries

Author(s): Wang, XF (Wang, Xianfu); Xiang, QY (Xiang, Qingyi); Liu, B (Liu, Bin); Wang, LJ (Wang, Lijing); Luo, T (Luo, Tao); Chen, D (Chen, Di); Shen, GZ (Shen, Guozhen)

Source: SCIENTIFIC REPORTS Volume: 3 Article Number: 2007 DOI: 10.1038/srep02007 Published: JUN 18 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Anatase TiO2 modified FeS nanowires assembled by numerous nanosheets were synthesized by using a typical hydrothermal method. The carbon-free nanocoated composite electrodes exhibit improved reversible capacity of 510 mAh g(-1) after 100 discharge/charge cycles at 200 mA g(-1), much higher than that of the pristine FeS nanostructures, and long-term cycling stability with little performance degradation even after 500 discharge/charge cycles at current density of 400 mA g(-1). Full batteries fabricated using the FeS@ TiO2 nanostructures anode and the LiMn2O4 nanowires cathode with excellent stability, and good rate capacities could also be achieved. The enhanced electrochemical performance of the composite electrodes can be attributed to the improved conductively of the integrated electrodes and the enhanced kinetics of lithium insertion/extraction at the electrode/electrolyte interface because of the incorporation of anatase TiO2 phase.

Addresses: [Wang, Xianfu; Xiang, Qingyi; Liu, Bin; Wang, Lijing; Luo, Tao; Chen, Di] HUST, WNLO, Wuhan 430074, Peoples R China.

[Wang, Xianfu; Xiang, Qingyi; Liu, Bin; Wang, Lijing; Luo, Tao; Chen, Di] HUST, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China.

[Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Shen, GZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: dichen@mail.hust.edu.cn; gzshen@semi.ac.cn

ISSN: 2045-2322

Record 216 of 495

Title: 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

Author(s): Dong, P (Dong, Peng); Yan, JC (Yan, Jianchang); Wang, JX (Wang, Junxi); Zhang, Y (Zhang, Yun); Geng, C (Geng, Chong); Wei, TB (Wei, Tongbo); Cong, PP (Cong, Peipei); Zhang, YY (Zhang, Yiyun); Zeng, JP (Zeng, Jianping); Tian, YD (Tian, Yingdong); Sun, LL (Sun, Lili); Yan, QF (Yan, Qingfeng); Li, JM (Li, Jinmin); Fan, SF (Fan, Shunfei); Qin, ZX (Qin, Zhixin)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 24 Article Number: 241113 DOI: 10.1063/1.4812237 Published: JUN 17 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 mu m due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03mW at 20mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency. (C) 2013 AIP Publishing LLC.

Addresses: [Dong, Peng; Yan, Jianchang; Wang, Junxi; Zhang, Yun; Wei, Tongbo; Cong, Peipei; Zhang, Yiyun; Zeng, Jianping; Tian, Yingdong; Sun, Lili; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

[Geng, Chong; Yan, Qingfeng] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China.

[Fan, Shunfei; Qin, Zhixin] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China.

Reprint Address: Yan, JC (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: yanjc@semi.ac.cn

ISSN: 0003-6951

Record 217 of 495

Title: Spontaneous quasi-periodic current self-oscillations in a weakly coupled GaAs/(Al,Ga)As superlattice at room temperature

Author(s): Huang, YY (Huang, Yuyang); Li, W (Li, Wen); Ma, WQ (Ma, Wenquan); Qin, H (Qin, Hua); Grahn, HT (Grahn, Holger T.); Zhang, YH (Zhang, Yaohui)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 24 Article Number: 242107 DOI: 10.1063/1.4811358 Published: JUN 17 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We have experimentally observed spontaneous quasi-periodic current self-oscillations at room temperature in a doped, weakly coupled GaAs/(Al,Ga)As superlattice (SL) with 50 periods, 7 nm well width, and 4 nm barrier width. The mole fraction of the aluminum in the barrier has been chosen to be 0.45 so that the direct barrier at the Gamma point is as high as possible and thermal carrier leakage through the X valley is as small as possible. A spectral analysis of the current self-oscillations, which are observed under DC voltage bias alone, demonstrates that spontaneous quasi-periodic oscillation modes coexist with periodic ones. (C) 2013 AIP Publishing LLC.

Addresses: [Huang, Yuyang; Li, Wen; Qin, Hua; Zhang, Yaohui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

[Ma, Wenquan] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Grahn, Holger T.] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany.

Reprint Address: Huang, YY (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, 398 Ruoshui Rd, Suzhou 215123, Peoples R China.

E-mail Addresses: yhzhang2006@sinano.ac.cn

ISSN: 0003-6951

Record 218 of 495

Title: Bidirectional grating coupler based optical modulator for low-loss Integration and low-cost fiber packaging

Author(s): Zhang, ZY (Zhang, Zanyun); Huang, BJ (Huang, Beiju); Zhang, Z (Zhang, Zan); Cheng, CT (Cheng, Chuantong); Chen, HD (Chen, Hongda)

Source: OPTICS EXPRESS Volume: 21 Issue: 12 Pages: 14202-14214 DOI: 10.1364/OE.21.014202 Published: JUN 17 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We proposed and demonstrated a novel optical modulator based on a bidirectional grating coupler designed for perfectly vertical fiber coupling. The grating functions as the fiber coupler and 3-dB splitter. To observe the interference, an arm difference of 30 mu m is introduced. As a result of the high coupling efficiency and near perfect split ratio of the grating coupler, this device exhibits a low on-chip insertion loss of 5.4dB (coupling loss included) and high on-off extinction ratio more than 20dB. The modulation efficiency is estimated to be within 3-3.84V.cm. In order to investigate the fiber misalignment tolerance of this modulator, misalignment influence of the static characteristics is analyzed. 10Gb/s Data transmission experiments of this device are performed with different fiber launch positions. The energy efficiency is estimated to be 8.1pJ/bit. (C) 2013 Optical Society of America

Addresses: [Zhang, Zanyun; Huang, Beiju; Zhang, Zan; Cheng, Chuantong; Chen, Hongda] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Huang, Beiju] Tsinghua Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China.

Reprint Address: Zhang, ZY (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: bjhuang@semi.ac.cn

ISSN: 1094-4087
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Record 219 of 495

Title: Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method

Author(s): Yuan, LJ (Yuan, Lijun); Tao, L (Tao, Li); Yu, HY (Yu, Hongyan); Chen, WX (Chen, Weixi); Lu, D (Lu, Dan); Li, YP (Li, Yanping); Ran, GZ (Ran, Guangzhao); Pan, JQ (Pan, Jiaoqing)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 12 Pages: 1180-1183 DOI: 10.1109/LPT.2013.2262265 Published: JUN 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A 1.55-mu m InGaAsP-Si hybrid laser operating at 10 degrees C under continuous-wave operation is fabricated using a selective-area metal-bonding method with AuGeNi/Au on InGaAsP gain structure as both cathode and bonding metal and AuSn on silicon-on-insulator (SOI) as bonding metal. The maximum single-facet output power is 9 mW. The slope efficiency of the hybrid laser is 0.04 W/A, four times that of the laser before bonding. A semi-insulating InP:Fe buried heterostructure laser is flip-chip bonded onto an SOI waveguide. The light generated in the active area is evanescently coupled into the silicon waveguide. The simplicity and flexibility of the fabrication process and high yield make the hybrid laser a promising light source.

Addresses: [Yuan, Lijun; Yu, Hongyan; Lu, Dan; Pan, Jiaoqing] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Tao, Li; Chen, Weixi; Li, Yanping; Ran, Guangzhao] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China.

[Tao, Li; Chen, Weixi; Li, Yanping; Ran, Guangzhao] Peking Univ, Sch Phys, Beijing 100871, Peoples R China.

Reprint Address: Yuan, LJ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: ljyuan@semi.ac.cn; taolipku@pku.edu.cn; hyyu09@semi.ac.cn; wxchen@pku.edu.cn; ludan@semi.ac.cn; lyphlj@163.com; rangz@pku.edu.cn; jqpan@semi.ac.cn

ISSN: 1041-1135

Record 220 of 495

Title: Ordered silicon nanowires prepared by template-assisted morphological design and metal-assisted chemical etching

Author(s): Liu, K (Liu, Kong); Qu, SC (Qu, Shengchun); Tan, FR (Tan, Furui); Bi, Y (Bi, Yu); Lu, SD (Lu, Shudi); Wang, ZG (Wang, Zhanguo)

Source: MATERIALS LETTERS Volume: 101 Pages: 96-98 DOI: 10.1016/j.matlet.2013.03.086 Published: JUN 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We reported a metal-assisted chemical etching approach to manufacture well-aligned silicon nanowires (SiNWs). Highly ordered gold (Au) mesh was achieved via vacuum evaporation on anodized aluminum oxide (AAO). It was revealed that the diameter and length of SiNWs could be controlled by adjusting the size of holes in Au mesh and etching duration, respectively. We found that the SiNWs fabricated by etching for 5 min were vertically oriented to form an array, while longer etching duration led to bunched SiNWs. The resulting SiNWs, which exhibited smooth side walls, uniform diameter, and high aspect ratio, were proved to grow along the [100] crystal direction of silicon. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Liu, Kong; Qu, Shengchun; Tan, Furui; Bi, Yu; Lu, Shudi; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Qu, SC (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: qsc@semi.ac.cn

ISSN: 0167-577X

Record 221 of 495

Title: Identifying different mechanisms of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two dimensional electron gas by photo-modulation technique

Author(s): Ma, H (Ma, Hui); Jiang, CY (Jiang, Chongyun); Liu, Y (Liu, Yu); Zhu, LP (Zhu, Laipan); Qin, XD (Qin, Xudong); Chen, YH (Chen, Yonghai)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 23 Article Number: 232402 DOI: 10.1063/1.4810913 Published: JUN 10 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We investigate the circular photogalvanic effect (CPGE) excited by sub-bandgap radiation in a GaAs/Al0.3Ga0.7As two dimensional electron gas and tune its amplitude by synchronously imposing an above-bandgap unpolarized light at normal incidence. With this photo-modulation technique, we identify two microscopic mechanisms of CPGE according to the dramatic change of apparent Rashba and Dresselhaus effects. We suggest the optical transitions to be Franz-Keldysh and intraband regime, respectively. Both regimes coexist in conventional CPGE and the intraband regime dominates at sufficient modulation power. (C) 2013 AIP Publishing LLC.

Addresses: [Ma, Hui] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Ma, H (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: mahui@semi.ac.cn; yhchen@semi.ac.cn

ISSN: 0003-6951
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Record 222 of 495

Title: Enhanced photoluminescence from porous silicon nanowire arrays

Author(s): Zhang, CQ (Zhang, Chunqian); Li, CB (Li, Chuanbo); Liu, Z (Liu, Zhi); Zheng, J (Zheng, Jun); Xue, CL (Xue, Chunlai); Zuo, YH (Zuo, Yuhua); Cheng, BW (Cheng, Buwen); Wang, QM (Wang, Qiming)

Source: NANOSCALE RESEARCH LETTERS Volume: 8 Article Number: 277 DOI: 10.1186/1556-276X-8-277 Published: JUN 9 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The enhanced room-temperature photoluminescence of porous Si nanowire arrays and its mechanism are investigated. Over 4 orders of magnitude enhancement of light intensity is observed by tuning their nanostructures and surface modification. It is concluded that the localized states related to Si-O bonds and self-trapped excitations in the nanoporous structures are attributed to the strong light emission.

Addresses: [Zhang, Chunqian; Li, Chuanbo; Liu, Zhi; Zheng, Jun; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Li, CB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: cbli@semi.ac.cn

ISSN: 1931-7573

Record 223 of 495

Title: Electron scattering in GaAs/InGaAs quantum wells subjected to an in-plane magnetic field

Author(s): Jin, DD (Jin, Dong-Dong); Yang, SY (Yang, Shao-Yan); Zhang, LW (Zhang, Liu-Wan); Li, HJ (Li, Hui-jie); Zhang, H (Zhang, Heng); Wang, JX (Wang, Jian-xia); Yang, T (Yang, Tao); Liu, XL (Liu, Xiang-Lin); Zhu, QS (Zhu, Qin-Sheng); Wang, ZG (Wang, Zhan-Guo)

Source: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 21 Article Number: 213711 DOI: 10.1063/1.4809763 Published: JUN 7 2013