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Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure


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[Chen, Y. H.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Yu, JL (reprint author), Fuzhou Univ, Coll Phys & Informat Engn, Inst Micro Nano Devices & Solar Cells, Fuzhou 350108, Fujian Province, Peoples R China.

E-mail Addresses: jlyu@semi.ac.cn; yhchen@semi.ac.cn

ISSN: 0021-8979
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Record 174 of 495

Title: Mechanical and Electronic Properties of Graphyne and Its Family under Elastic Strain: Theoretical Predictions

Author(s): Yue, Q (Yue, Qu); Chang, SL (Chang, Shengli); Kang, J (Kang, Jun); Qin, SQ (Qin, Shiqiao); Li, JB (Li, Jingbo)

Source: JOURNAL OF PHYSICAL CHEMISTRY C Volume: 117 Issue: 28 Pages: 14804-14811 DOI: 10.1021/jp4021189 Published: JUL 18 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Using the first-principles calculations, we investigate the mechanical and electronic properties of graphyne and its family under strain. It is found that the in-plane stiffness decreases with increasing the number of acetylenic linkages, which can be characterized by a simple scaling law. The band gap of the graphyne family is found to be modified by applying strain through various approaches. While homogeneous tensile strain leads to an increase in the band gap, the homogeneous compressive strain as well as uniaxial tensile and compressive strains within the imposed range induce a reduction in it. Both graphyne and graphyne-3 under different tensile strains possess direct gaps at either M or S point of Brillouin zone, whereas the band gaps of graphdiyne and graphyne-4 are always direct and located at the G point, irrespective of strain types. Our study suggests a potential direction for fabrication of novel strain-tunable nanoelectronic and optoelectronic devices.

Addresses: [Yue, Qu; Chang, Shengli; Qin, Shiqiao] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China.

[Kang, Jun; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Li, JB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jbli@semi.ac.cn

ISSN: 1932-7447
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Record 175 of 495

Title: Linear optical pulse compression based on temporal zone plates

Author(s): Li, B (Li, Bo); Li, M (Li, Ming); Lou, S (Lou, Shuqin); Azana, J (Azana, Jose)

Source: OPTICS EXPRESS Volume: 21 Issue: 14 Pages: 16814-16830 DOI: 10.1364/OE.21.016814 Published: JUL 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We propose and demonstrate time-domain equivalents of spatial zone plates, namely temporal zone plates, as alternatives to conventional time lenses. Both temporal intensity zone plates, based on intensity-only temporal modulation, and temporal phase zone plates, based on phase-only temporal modulation, are introduced and studied. Temporal zone plates do not exhibit the limiting tradeoff between temporal aperture and frequency bandwidth (temporal resolution) of conventional linear time lenses. As a result, these zone plates can be ideally designed to offer a time-bandwidth product (TBP) as large as desired, practically limited by the achievable temporal modulation bandwidth (limiting the temporal resolution) and the amount of dispersion needed in the target processing systems (limiting the temporal aperture). We numerically and experimentally demonstrate linear optical pulse compression by using temporal zone plates based on linear electro-optic temporal modulation followed by fiber-optics dispersion. In the pulse-compression experiment based on temporal phase zone plates, we achieve a resolution of similar to 25.5 ps over a temporal aperture of similar to 5.77 ns, representing an experimental TBP larger than 226 using a phase-modulation amplitude of only similar to 0.8 pi rad. We also numerically study the potential of these devices to achieve temporal imaging of optical waveforms and present a comparative analysis on the performance of different temporal intensity and phase zone plates. (C) 2013 Optical Society of America

Addresses: [Li, Bo; Li, Ming; Azana, Jose] Inst Natl Rech Sci Energie Mat & Telecommun, Montreal, PQ H5A 1K6, Canada.

[Li, Bo; Lou, Shuqin] Beijing Jiaotong Univ, Sch Elect & Informat Engn, Beijing 10004, Peoples R China.

[Li, Ming] Chinese Acad Sci, Inst Semiconductors, Beijing 100083, Peoples R China.

Reprint Address: Li, B (reprint author), Inst Natl Rech Sci Energie Mat & Telecommun, Montreal, PQ H5A 1K6, Canada.

E-mail Addresses: bo.li@emt.inrs.ca

ISSN: 1094-4087


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Record 176 of 495

Title: Electro-Optic Directed XNOR Logic Gate Based on U-Shaped Waveguides and Microring Resonators

Author(s): Zhu, WW (Zhu, Weiwei); Tian, YH (Tian, Yonghui); Zhang, L (Zhang, Lei); Yang, L (Yang, Lin)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 14 Pages: 1305-1308 DOI: 10.1109/LPT.2013.2263786 Published: JUL 15 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: We report an electro-optic directed logic gate based on two U-shaped waveguides and two microring resonators, which can implement the XNOR operation. Two electrical signals representing the two operands of the operation are applied to the PIN diodes embedded around the two microring resonators, which are modulated through the plasma dispersion effect. The result of the XNOR operation is obtained at the output port as optical signal. The operation at the speed of 100 Mb/s is demonstrated.

Addresses: [Zhu, Weiwei; Tian, Yonghui; Zhang, Lei; Yang, Lin] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Zhu, WW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: zhuweiwei@semi.ac.cn; tianyh@semi.ac.cn; zhanglei@semi.ac.cn; oip@semi.ac.cn

ISSN: 1041-1135


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Record 177 of 495

Title: Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition

Author(s): Luo, S (Luo, Shuai); Ji, HM (Ji, Hai-Ming); Yang, XG (Yang, Xiao-Guang); Yang, T (Yang, Tao)

Source: JOURNAL OF CRYSTAL GROWTH Volume: 375 Pages: 100-103 DOI: 10.1016/j.jcrysgro.2013.04.024 Published: JUL 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The impact of a double-cap procedure using two growth temperatures on the optical characteristics of InAs/InGaAsP/InP quantum dots (QDs) grown by metal-organic chemical vapor deposition has been investigated. With a combination of optimized thickness of the first cap layer and elevated growth temperature for the second cap layer, it is found that the photoluminescence (PL) linewidth of QDs can be significantly reduced from 124 meV to 87 meV at room temperature (RT). This reduction in PL linewidth is likely to be due to the enhanced As/P exchange reaction and indium migration at high growth temperature, which lead to a more uniform QD height distribution. Moreover, the uniformity of the PL peak intensity and peak energy on the wafer surface is evidently improved due to the higher material quality achieved when an elevated temperature is used for the SCL growth. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Luo, Shuai; Ji, Hai-Ming; Yang, Xiao-Guang; Yang, Tao] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Yang, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: tyang@semi.ac.cn

ISSN: 0022-0248


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Record 178 of 495

Title: Dispersion Relation of Bloch Modes in Corrugated Metallic Thin Film With Square-Lattice Nanowell Array

Author(s): Wang, ZZ (Wang, Zhenzhen); Wang, CX (Wang, Chunxia); Kan, Q (Kan, Qiang); Chen, HD (Chen, Hongda)

Source: JOURNAL OF LIGHTWAVE TECHNOLOGY Volume: 31 Issue: 14 Pages: 2314-2320 DOI: 10.1109/JLT.2013.2262114 Published: JUL 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The optical properties of plasmonic crystal consisting of corrugated metallic thin film with square-lattice nanowell array are theoretically investigated. The dispersion relationship and mode behaviors of surface plasmon polariton (SPP) Bloch modes around the Gamma point in the first Brillouin zone are calculated using rigorous coupled wave analysis method. We found that these properties are relevant to the Bloch-mode excitation of the top surface of metal layer by free-space illumination. We have also studied the influence of the patterned silicon substrate on the excitation of SPP Bloch mode and found that with the increase of gold film thickness, the proportion of energy coupling to the silicon substrate becomes smaller, which would increase the coupling efficiency of SPP mode.

Addresses: [Wang, Zhenzhen; Wang, Chunxia; Kan, Qiang; Chen, Hongda] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Wang, ZZ (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: cxwang@semi.ac.cn

ISSN: 0733-8724


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Record 179 of 495

Title: Electro-Optical Response Analysis of a 40 Gb/s Silicon Mach-Zehnder Optical Modulator

Author(s): Ding, JF (Ding, Jianfeng); Ji, RQ (Ji, Ruiqiang); Zhang, L (Zhang, Lei); Yang, L (Yang, Lin)

Source: JOURNAL OF LIGHTWAVE TECHNOLOGY Volume: 31 Issue: 14 Pages: 2434-2440 DOI: 10.1109/JLT.2013.2262522 Published: JUL 15 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: We demonstrate a 40 Gbit/s silicon Mach-Zehnder optical modulator driven by a differential voltage of 0.36 Vpp. The energy efficiency is as low as 32.4 fJ/bit which is near the power efficiency of the ring modulator. We analyze the relationship between the electrical bandwidth and the electro-optical (EO) bandwidth based on the electrical S parameter measurement. Because of the nonlinear response, the electro-optical bandwidths in the small-signal tests are is slightly different when the modulator is biased at different transmission points. But the EO response is much different when the optical phase change is large enough to cover the nonlinear and linear regions at the same time. The nonlinearity can greatly improve the EO response in large-signal test. In our experiment, the rise/fall (20%-80%) time decreases from 13 ps to 10 ps as the driving amplitude increases from 5 V to 6 V under the same reverse bias of 3 V.

Addresses: [Ding, Jianfeng; Ji, Ruiqiang; Zhang, Lei; Yang, Lin] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Ding, JF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: oip@semi.ac.cn

ISSN: 0733-8724


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Record 180 of 495

Title: Multi-channel DFB laser arrays fabricated by SAG technology

Author(s): Zhang, C (Zhang, Can); Liang, S (Liang, Song); Zhu, HL (Zhu, Hongliang); Ma, L (Ma, Li); Wang, BJ (Wang, Baojun); Ji, C (Ji, Chen); Wang, W (Wang, Wei)

Source: OPTICS COMMUNICATIONS Volume: 300 Pages: 230-235 DOI: 10.1016/j.optcom.2013.03.012 Published: JUL 15 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: Selective area growth (SAG) of multi-quantum well materials (MQW) has been carried out for the fabrication of monolithically integrated DFB laser arrays. The effects of different growth conditions on the control of MQW emission wavelengths are studied in view of achieving uniformly spaced array wavelengths. It is found that SAG of MQWs at a lower reactor pressure and with a wider opening of the SAG masks shows better control of both the optical properties of the MQW materials and the emission wavelengths of lasers. Through optimizing the SAG conditions, a rather good control of the emission wavelengths of DFB lasers is obtained, with less than 0.1 nm wavelength deviations from its corresponding fitted value. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Zhang, Can; Liang, Song; Zhu, Hongliang; Ma, Li; Wang, Baojun; Ji, Chen; Wang, Wei] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Liang, S (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: liangsong@semi.ac.cn

ISSN: 0030-4018


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Record 181 of 495

Title: Ferromagnetic Interfacial Interaction and the Proximity Effect in a Co2FeAl/(Ga,Mn)As Bilayer

Author(s): Nie, SH (Nie, S. H.); Chin, YY (Chin, Y. Y.); Liu, WQ (Liu, W. Q.); Tung, JC (Tung, J. C.); Lu, J (Lu, J.); Lin, HJ (Lin, H. J.); Guo, GY (Guo, G. Y.); Meng, KK (Meng, K. K.); Chen, L (Chen, L.); Zhu, LJ (Zhu, L. J.); Pan, D (Pan, D.); Chen, CT (Chen, C. T.); Xu, YB (Xu, Y. B.); Yan, WS (Yan, W. S.); Zhao, JH (Zhao, J. H.)

Source: PHYSICAL REVIEW LETTERS Volume: 111 Issue: 2 Article Number: 027203 DOI: 10.1103/PhysRevLett.111.027203 Published: JUL 9 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The magnetic properties of a Co2FeAl/(Ga,Mn)As bilayer epitaxied on GaAs (001) are studied both experimentally and theoretically. Unlike the common antiferromagnetic interfacial interaction existing in most ferromagnet-magnetic semiconductor bilayers, a ferromagnetic interfacial interaction in the Co2FeAl/(Ga,Mn)As bilayer is observed from measurements of magnetic hysteresis and x-ray magnetic circular dichroism. The Mn ions in a 1.36 nm thick (Ga,Mn) As layer remain spin polarized up to 400 K due to the magnetic proximity effect. The minor loops of the Co2FeAl/(Ga,Mn)As bilayer shift with a small ferromagnetic interaction field of +24 Oe and -23 Oe at 15 K. The observed ferromagnetic interfacial coupling is supported by ab initio density functional calculations. These findings may provide a viable pathway for designing room-temperature semiconductor spintronic devices through magnetic proximity effect.

Addresses: [Nie, S. H.; Lu, J.; Meng, K. K.; Chen, L.; Zhu, L. J.; Pan, D.; Zhao, J. H.] Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.

[Chin, Y. Y.; Lin, H. J.; Chen, C. T.] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan.

[Liu, W. Q.; Xu, Y. B.] Univ York, Dept Elect, York YO10 5DD, N Yorkshire, England.

[Tung, J. C.; Guo, G. Y.] Natl Chengchi Univ, Grad Inst Appl Phys, Taipei 11605, Taiwan.

[Guo, G. Y.] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan.

[Yan, W. S.] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China.

Reprint Address: Guo, GY (reprint author), Natl Chengchi Univ, Grad Inst Appl Phys, Taipei 11605, Taiwan.

E-mail Addresses: gyguo@phys.ntu.edu.tw; jhzhao@red.semi.ac.cn

ISSN: 0031-9007
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Record 182 of 495

Title: Anisotropic current-controlled magnetization reversal in the ferromagnetic semiconductor (Ga,Mn)As

Author(s): Li, YY (Li, Yuanyuan); Cao, YF (Cao, Y. F.); Wei, GN (Wei, G. N.); Li, YY (Li, Yanyong); Ji, Y (Ji, Y.); Wang, KY (Wang, K. Y.); Edmonds, KW (Edmonds, K. W.); Campion, RP (Campion, R. P.); Rushforth, AW (Rushforth, A. W.); Foxon, CT (Foxon, C. T.); Gallagher, BL (Gallagher, B. L.)

Source: APPLIED PHYSICS LETTERS Volume: 103 Issue: 2 Article Number: 022401 DOI: 10.1063/1.4813085 Published: JUL 8 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be sensitive to the orientation of the current with respect to the crystalline axes. The dependence of the spin-orbit effective magnetic field on the direction and magnitude of the current is determined from the shifts in the magnetization switching angle. We find that the strain induced effective magnetic field is about three times as large as the Rashba induced magnetic field in our GaMnAs devices. (C) 2013 AIP Publishing LLC.

Addresses: [Li, Yuanyuan; Cao, Y. F.; Wei, G. N.; Li, Yanyong; Ji, Y.; Wang, K. Y.] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

[Edmonds, K. W.; Campion, R. P.; Rushforth, A. W.; Foxon, C. T.; Gallagher, B. L.] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England.

Reprint Address: Li, YY (reprint author), Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: kywang@semi.ac.cn

ISSN: 0003-6951
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Record 183 of 495

Title: Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

Author(s): Wang, J (Wang, Juan); Wang, GW (Wang, Guo-Wei); Xu, YQ (Xu, Ying-Qiang); Xing, JL (Xing, Jun-Liang); Xiang, W (Xiang, Wei); Tang, B (Tang, Bao); Zhu, Y (Zhu, Yan); Ren, ZW (Ren, Zheng-Wei); He, ZH (He, Zhen-Hong); Niu, ZC (Niu, Zhi-Chuan)

Source: JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 1 Article Number: 013704 DOI: 10.1063/1.4811443 Published: JUL 7 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: InAs/AlSb deep quantum well (QW) structures with high electron mobility were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates. AlSb and Al0.75Ga0.25Sb buffer layers were grown to accommodate the lattice mismatch (7%) between the InAs/AlSb QW active region and GaAs substrate. Transmission electron microscopy shows abrupt interface and atomic force microscopy measurements display smooth surface morphology. Growth conditions of AlSb and Al0.75Ga0.25Sb buffer were optimized. Al0.75Ga0.25Sb is better than AlSb as a buffer layer as indicated. The sample with optimal Al0.75Ga0.25Sb buffer layer shows a smooth surface morphology with root-mean-square roughness of 6.67 angstrom. The electron mobility has reached as high as 27 000 cm(2)/Vs with a sheet density of 4.54 x 10(11)/cm(2) at room temperature. (C) 2013 AIP Publishing LLC.

Addresses: [Wang, Juan; Wang, Guo-Wei; Xu, Ying-Qiang; Xing, Jun-Liang; Xiang, Wei; Tang, Bao; Zhu, Yan; Ren, Zheng-Wei; He, Zhen-Hong; Niu, Zhi-Chuan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Wang, J (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: zcniu@semi.ac.cn

ISSN: 0021-8979


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Record 184 of 495

Title: Fabrication of SU8-based chip suitable for genomic sequencing

Author(s): Han, WJ (Han Wei-Jing); Wei, QQ (Wei Qing-Quan); Li, YT (Li Yun-Tao); Zhou, XG (Zhou Xiao-Guang); Yu, YD (Yu Yu-De)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 14 Article Number: 148701 DOI: 10.7498/aps.62.148701 Published: JUL 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: DNA sequencing technology has markedly advanced the development of biological and medicinal sciences. High-throughput pyrosequencing instruments that combine the pyrosequencing with microfabricated high-density picoliter reactors have been proved to be suitable for de novo sequencing and metagenome sequencing. In the present work, we report on an alternative sequencing chip consisting of hundreds of thousands of picoliter sized honeycombed SU8 reaction vessels on a fiber-optic slide by lithography technique for high-throughput pyrosequencing instruments. Highly reproducible fabrication process of SU8 sequencing chip is achieved through the improvement on SU8 film thickness uniformity and relaxation of SU8 residual stress during fabrication. To achieve the optical isolation required for SU8 reaction wells, metal film is selectively deposited on the side walls of the reaction vessels by reformating vacuum coating. With the metal coating, the average value of optical cross talking between SU8 reaction vessels is reduced from 25% to 1%. The SU8 sequencing chip demonstrates an excellent light transmission characteristic and meets the need of pyrosequencing application.

Addresses: [Han Wei-Jing; Wei Qing-Quan; Li Yun-Tao; Zhou Xiao-Guang; Yu Yu-De] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Han Wei-Jing; Wei Qing-Quan; Li Yun-Tao; Zhou Xiao-Guang; Yu Yu-De] Chinese Acad Sci, Inst Semicnductorss, Joint Lab Bioinformat Acquisit & Sensing Technol, Beijing Inst Genom, Beijing 100083, Peoples R China.

Reprint Address: Yu, YD (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: yudeyu@semi.ac.cn

ISSN: 1000-3290
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Record 185 of 495

Title: Dynamics Maps and Scenario Transitions for a Semiconductor Laser Subject to Dual-Beam Optical Injection

Author(s): AlMulla, M (AlMulla, Mohammad); Qi, XQ (Qi, Xiao-Qiong); Liu, JM (Liu, Jia-Ming)

Source: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Volume: 19 Issue: 4 Article Number: 1501108 DOI: 10.1109/JSTQE.2013.2239611 Published: JUL-AUG 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Compared with single-beam injection, dual-beam optical injection increases the complexity and enriches the nonlinear dynamics of a semiconductor laser. The nonlinear dynamics of a dual-beam optically injected semiconductor laser system under various operating conditions are numerically studied by comprehensive comparisons of the output spectra of single-beam injection and dual-beam injection. Complete mapping of the different scenarios induced by dual-beam optical injection is shown for various combinations of detuning frequencies and injection strengths of the two injection beams. Complex dual-beam injection dynamics are mapped, and the dynamics in different scenarios are linked through transitional regions. Characteristics of the transition from one scenario to another are traced and analyzed by comparing the resonance frequency of each dual-beam injection optical spectrum with that of the dominant single-beam injection optical spectrum. Two different types of chaos, each following a period-doubling route, are identified in two different scenarios.

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