Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Addresses: [Yu, Tianbao; Li, Sizhong; Wang, Tongbiao; Liao, Qinghua; Xu, Xuming] Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R China.

[Yu, Tianbao] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Liu, Nianhua] Nanchang Univ, Inst Adv Study, Nanchang 330031, Peoples R China.

Reprint Address: Yu, TB (reprint author), Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R China.

E-mail Addresses: yutianbao@ncu.edu.cn; lsz214@163.com; nhliu@ncu.edu.cn; tbwang@ncu.edu.cn; lqliao@ncu.edu.cn; ncxmxcn@ncu.edu.cn

ISSN: 1041-1135

Record 162 of 495

Title: High-brightness diode laser arrays integrated with a phase shifter designed for single-lobe far-field pattern

Author(s): Liu, L (Liu, Lei); Zhang, JX (Zhang, Jianxin); Ma, SD (Ma, Shaodong); Qi, AY (Qi, Aiyi); Qu, HW (Qu, Hongwei); Zhang, YJ (Zhang, Yejin); Zheng, WH (Zheng, Wanhua)

Source: OPTICS LETTERS Volume: 38 Issue: 15 Pages: 2770-2772 DOI: 10.1364/OL.38.002770 Published: AUG 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: High-brightness, edge-emitting diode laser arrays integrated with a phase shifter have been designed and fabricated at a wavelength of about 910 nm. Stable out-of-phase mode is generated through coupling evanescently and converted to be nearly in-phase by the phase modulation from the phase shifter. With a very simple manufacture process, stable single-lobe far-field pattern is achieved in the slow axis when the continuous wave output power exceeds 460 mW/facet, and the divergence angle is only 2.7 times the diffraction-limited value. Such device shows a promising future for high-brightness application with low cost and easy fabrication. (C) 2013 Optical Society of America

Addresses: [Liu, Lei; Zhang, Jianxin; Ma, Shaodong; Qi, Aiyi; Qu, Hongwei; Zhang, Yejin; Zheng, Wanhua] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Zheng, WH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: whzheng@semi.ac.cn

ISSN: 0146-9592

Record 163 of 495

Title: Investigation of EEG abnormalities in the early stage of Parkinson's disease

Author(s): Han, CX (Han, Chun-Xiao); Wang, J (Wang, Jiang); Yi, GS (Yi, Guo-Sheng); Che, YQ (Che, Yan-Qiu)

Source: COGNITIVE NEURODYNAMICS Volume: 7 Issue: 4 Pages: 351-359 DOI: 10.1007/s11571-013-9247-z Published: AUG 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The objective of the present study was to investigate brain activity abnormalities in the early stage of Parkinson's disease (PD). To achieve this goal, eyes-closed resting state electroencephalography (EEG) signals were recorded from 15 early-stage PD patients and 15 age-matched healthy controls. The AR Burg method and the wavelet packet entropy (WPE) method were used to characterize EEG signals in different frequency bands between the groups, respectively. In the case of the AR Burg method, an increase of relative powers in the delta- and theta-band, and a decrease of relative powers in the alpha- and beta-band were observed for patients compared with controls. For the WPE method, EEG signals from patients showed significant higher entropy over the global frequency domain. Furthermore, WPE in the gamma-band of patients was higher than that of controls, while WPE in the delta-, theta-, alpha- and beta-band were all lower. All of these changes in EEG dynamics may represent early signs of cortical dysfunction, which have potential use as biomarkers of PD in the early stage. Our findings may be further used for early intervention and early diagnosis of PD.

Addresses: [Han, Chun-Xiao; Che, Yan-Qiu] Tianjin Univ Technol & Educ, Tianjin Key Lab Informat Sensing & Intelligent Co, Tianjin 300222, Peoples R China.

[Han, Chun-Xiao] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang, Jiang; Yi, Guo-Sheng] Tianjin Univ, Sch Elect & Automat Engn, Tianjin 300072, Peoples R China.

Reprint Address: Wang, J (reprint author), Tianjin Univ, Sch Elect & Automat Engn, 92 Weijin Rd, Tianjin 300072, Peoples R China.

E-mail Addresses: cxhan@tju.edu.cn; jiangwang@tju.edu.cn

ISSN: 1871-4080

Record 164 of 495

Title: Monolithically Integrated 4-Channel-Selectable Light Sources Fabricated by the SAG Technology

Author(s): Zhang, C (Zhang, Can); Zhu, HL (Zhu, Hongliang); Liang, S (Liang, Song); Han, LS (Han, Liangshun); Wang, W (Wang, Wei)

Source: IEEE PHOTONICS JOURNAL Volume: 5 Issue: 4 Article Number: 1400407 DOI: 10.1109/JPHOT.2013.2271733 Published: AUG 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The monolithic integration of four 1.5-mu m InGaAsP/InP distributed feedback (DFB) lasers with a 4 x 1 multimode-interference (MMI) optical combiner using the selective area growth and butt-joint regrowth technologies is proposed and demonstrated. A dry-etching stop layer is grown to guarantee the etching depth of MMI. The four channels could match the ITU wavelength grid of 200-GHz well with a simple integrated thin-film heater, covering the wavelength range of 1552.3-1556.3 nm. The average output power of LD is 2.8 mW with a 150-mA current, and the threshold current is 20-22 mA at 25 degrees C. The four channels can operate separately or simultaneously.

Addresses: [Zhang, Can; Zhu, Hongliang; Liang, Song; Han, Liangshun; Wang, Wei] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Zhu, HL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: zhangcan537@semi.ac.cn; zhuhl@semi.ac.cn

ISSN: 1943-0655

Record 165 of 495

Title: A III-V/silicon hybrid racetrack ring single-mode laser with periodic microstructures

Author(s): Zhang, YJ (Zhang, Yejin); Wang, HL (Wang, Hailing); Qu, HW (Qu, Hongwei); Zhang, S (Zhang, Siriguleng); Ma, SD (Ma, Shaodong); Peng, HL (Peng, Hongling); Feng, ZG (Feng, Zhigang); Zheng, WH (Zheng, Wanhua)

Source: OPTICS COMMUNICATIONS Volume: 301 Pages: 112-115 DOI: 10.1016/j.optcom.2013.03.026 Published: AUG 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this paper, a III-V/silicon hybrid single-mode on-chip laser is presented. The mode-selection mechanism of the hybrid mode laser is based on a racetrack resonator with periodic microstructures. The laser only needs standard photolithography in the whole fabrication process. Better mode characteristics can be realized comparing to simple runway ring laser. Output power of 0.3 mW and the side-mode suppression ratio of larger than 20 dB in continuous-wave are obtained from experiments. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Zhang, Yejin; Wang, Hailing; Qu, Hongwei; Zhang, Siriguleng; Ma, Shaodong; Peng, Hongling; Feng, Zhigang; Zheng, Wanhua] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Zheng, WH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: whzheng@semi.ac.cn

ISSN: 0030-4018

Record 166 of 495

Title: Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells

Author(s): Liu, CB (Liu, Changbo); Yang, SY (Yang, Shaoyan); Shi, K (Shi, Kai); Liu, GP (Liu, Guipeng); Zhang, H (Zhang, Heng); Jin, DD (Jin, Dongdong); Gu, CY (Gu, Chengyan); Zhao, GJ (Zhao, Guijuan); Sang, L (Sang, Ling); Liu, XL (Liu, Xianglin); Zhu, QS (Zhu, Qinsheng); Wang, ZG (Wang, Zhanguo)

Source: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Volume: 52 Pages: 150-154 DOI: 10.1016/j.physe.2013.04.009 Published: AUG 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A modified quantum dots (QDs) structure model is developed in this study. Compared with the traditional model, the gradual composition transition at the interface between the QDs and matrix is taken into account in the modified model. Two dimensional electron gas (2DEG) mobility limited by QDs scattering is studied based on the modified model. The result is compared with the one based on the traditional model. It is found that the contribution of the gradual composition transition region to the electron mobility is too significant to be negligible, especially in the case of high 2DEG density or small QDs radius. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Liu, Changbo; Yang, Shaoyan; Shi, Kai; Liu, Guipeng; Zhang, Heng; Jin, Dongdong; Gu, Chengyan; Zhao, Guijuan; Sang, Ling; Liu, Xianglin; Zhu, Qinsheng; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Liu, Changbo; Yang, Shaoyan; Shi, Kai; Liu, Guipeng; Zhang, Heng; Jin, Dongdong; Gu, Chengyan; Zhao, Guijuan; Sang, Ling; Liu, Xianglin; Zhu, Qinsheng; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Liu, CB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: liuchb@semi.ac.cn; sh-yyang@semi.ac.cn

ISSN: 1386-9477
--------------------------------------------------------------------------------

Record 167 of 495

Title: Double-layer anti-reflection coating containing a nanoporous anodic aluminum oxide layer for GaAs solar cells

Author(s): Yang, TS (Yang, Tianshu); Wang, XD (Wang, Xiaodong); Liu, W (Liu, Wen); Shi, YP (Shi, Yanpeng); Yang, FH (Yang, Fuhua)

Source: OPTICS EXPRESS Volume: 21 Issue: 15 Pages: 18207-18215 DOI: 10.1364/OE.21.018207 Published: JUL 29 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Multilayer anti-reflection (AR) coatings can be used to improve the efficiency of Gallium Arsenide (GaAs) solar cells. We propose an alternate method to obtain optical thin films with specified refractive indices, which is using a self-assembled nanoporous anodic aluminum oxide (AAO) template as an optical thin film whose effective refractive index can be tuned by pore-widening. Different kinds of double-layer AR coatings each containing an AAO layer were designed and investigated by finite difference time domain (FDTD) method. We demonstrate that a gimel /4n - gimel /4n AR coating consisting of a TiO2 layer and an AAO layer whose effective refractive index is 1.32 realizes a 96.8% light absorption efficiency of the GaAs solar cell under AM1.5 solar spectrum (400 nm-860 nm). We also have concluded some design principles of the double-layer AR coating containing an AAO layer for GaAs solar cells. (C) 2013 Optical Society of America

Addresses: [Yang, Tianshu; Wang, Xiaodong; Liu, Wen; Shi, Yanpeng; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

Reprint Address: Yang, FH (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

E-mail Addresses: xdwang@semi.ac.cn; fhyang@semi.ac.cn

ISSN: 1094-4087

Record 168 of 495

Title: InAs-mediated growth of vertical InSb nanowires on Si substrates

Author(s): Li, TF (Li, Tianfeng); Gao, LZ (Gao, Lizhen); Lei, W (Lei, Wen); Guo, LJ (Guo, Lijun); Pan, HY (Pan, Huayong); Yang, T (Yang, Tao); Chen, YH (Chen, Yonghai); Wang, ZG (Wang, Zhanguo)

Source: NANOSCALE RESEARCH LETTERS Volume: 8 Article Number: 333 DOI: 10.1186/1556-276X-8-333 Published: JUL 24 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but with pyramid-shaped InSb. The indium-droplet-ended nanowires are longer than the other group of nanowires. For both groups of InSb nanowires, InAs layers play an important role in their formation by serving as a template for growing InSb nanowires. The results presented in this work suggest a useful approach to grow catalyst-free InSb nanowires on Si substrates, which is significant for their device applications.

Addresses: [Li, Tianfeng; Gao, Lizhen; Guo, Lijun] Henan Univ, Sch Phys & Elect, Dept Phys, Kaifeng 475004, Peoples R China.

[Li, Tianfeng; Yang, Tao; Chen, Yonghai; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Lei, Wen] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia.

[Pan, Huayong] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China.

[Pan, Huayong] Peking Univ, Dept Elect, Beijing 100871, Peoples R China.

Reprint Address: Guo, LJ (reprint author), Henan Univ, Sch Phys & Elect, Dept Phys, Kaifeng 475004, Peoples R China.

E-mail Addresses: juneguo@henu.edu.cn

ISSN: 1931-7573

Record 169 of 495

Title: Experimental investigation of quantum Simpson's paradox

Author(s): Li, YL (Li, Yu-Long); Tang, JS (Tang, Jian-Shun); Wang, YT (Wang, Yi-Tao); Wu, YC (Wu, Yu-Chun); Han, YJ (Han, Yong-Jian); Li, CF (Li, Chuan-Feng); Guo, GC (Guo, Guang-Can); Yu, Y (Yu, Ying); Li, MF (Li, Mi-Feng); Zha, GW (Zha, Guo-Wei); Ni, HQ (Ni, Hai-Qiao); Niu, ZC (Niu, Zhi-Chuan)

Source: PHYSICAL REVIEW A Volume: 88 Issue: 1 Article Number: 015804 DOI: 10.1103/PhysRevA.88.015804 Published: JUL 24 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The well-known Simpson's paradox, or Yule-Simpson (YS) effect, is often encountered in social-science and medical-science statistics. It occurs when the correlations present in different groups are reversed if the groups are combined. Simpson's paradox also exists in quantum measurements. In this Brief Report, we experimentally realized two analogous effects: the quantum-classical YS effect and the quantum-quantum YS effect in the quantum-dot system. We also compared the probability of obtaining those two effects under identical quantum measurements and found that the quantum-quantum YS effect is more likely to occur than the quantum-classical YS effect.

Addresses: [Li, Yu-Long; Tang, Jian-Shun; Wang, Yi-Tao; Wu, Yu-Chun; Han, Yong-Jian; Li, Chuan-Feng; Guo, Guang-Can] Univ Sci & Technol China, CAS, Key Lab Quantum Informat, Hefei 230026, Peoples R China.

[Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan] Chinese Acad Sci, SKLSM, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Li, CF (reprint author), Univ Sci & Technol China, CAS, Key Lab Quantum Informat, Hefei 230026, Peoples R China.

E-mail Addresses: cfli@ustc.edu.cn

ISSN: 1050-2947
--------------------------------------------------------------------------------

Record 170 of 495

Title: High efficient GaN-based laser diodes with tunnel junction

Author(s): Feng, MX (Feng, M. X.); Liu, JP (Liu, J. P.); Zhang, SM (Zhang, S. M.); Jiang, DS (Jiang, D. S.); Li, ZC (Li, Z. C.); Zhou, K (Zhou, K.); Li, DY (Li, D. Y.); Zhang, LQ (Zhang, L. Q.); Wang, F (Wang, F.); Wang, H (Wang, H.); Chen, P (Chen, P.); Liu, ZS (Liu, Z. S.); Zhao, DG (Zhao, D. G.); Sun, Q (Sun, Q.); Yang, H (Yang, H.)

Source: APPLIED PHYSICS LETTERS Volume: 103 Issue: 4 Article Number: 043508 DOI: 10.1063/1.4816598 Published: JUL 22 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: High-efficient GaN-based laser diodes (LDs) with tunnel junction are designed by replacing conventional p-type AlGaN cladding layers and p-type GaN contact with lower-resistant n-type AlGaN cladding layers and n-type GaN contact. In addition, the characteristics of the LDs with tunnel junction are numerically investigated by using the commercial software LASTIP. It is found that the performance of these LDs is greatly improved. As a comparison, the absorption loss and non-radiative recombination are greatly reduced. The threshold current and series resistance are decreased by 12% and 59%, respectively, and the slope efficiency is raised up by 22.3%. At an injection current of 120 mA, the output power and wall-plug-efficiency are increased by 34% and 79%, respectively. (C) 2013 AIP Publishing LLC.

Addresses: [Feng, M. X.; Liu, J. P.; Zhang, S. M.; Li, Z. C.; Zhou, K.; Li, D. Y.; Zhang, L. Q.; Wang, F.; Wang, H.; Sun, Q.; Yang, H.] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

[Feng, M. X.; Liu, J. P.; Zhang, S. M.; Li, Z. C.; Zhou, K.; Li, D. Y.; Zhang, L. Q.; Wang, F.; Wang, H.; Sun, Q.; Yang, H.] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

[Feng, M. X.; Jiang, D. S.; Chen, P.; Liu, Z. S.; Zhao, D. G.] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Liu, JP (reprint author), Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

E-mail Addresses: jpliu2010@sinano.ac.cn; smzhang2010@sinano.ac.cn

ISSN: 0003-6951

Record 171 of 495

Title: Surface emitting quantum cascade lasers operating in continuous-wave mode above 70 degrees C at lambda similar to 4.6 mu m

Author(s): Yao, DY (Yao, Dan-Yang); Zhang, JC (Zhang, Jin-Chuan); Liu, FQ (Liu, Feng-Qi); Zhuo, N (Zhuo, Ning); Yan, FL (Yan, Fang-Liang); Wang, LJ (Wang, Li-Jun); Liu, JQ (Liu, Jun-Qi); Wang, ZG (Wang, Zhan-Guo)

Source: APPLIED PHYSICS LETTERS Volume: 103 Issue: 4 Article Number: 041121 DOI: 10.1063/1.4816722 Published: JUL 22 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We demonstrate surface emitting distributed feedback (DFB) quantum cascade lasers for very high temperature continuous-wave (cw) operation at lambda similar to 4.6 mu m. A second-order DFB grating beneath the waveguide provides efficient vertical outcoupling. cw operation is reported up to a temperature of 75 degrees C. Total output power of 105 mW is obtained with a record low threshold current density of 0.85 kA/cm(2) at 10 degrees C. Single-lobed far-field radiation pattern with a low divergence angle of about 0.17 degrees x 18.7 degrees is achieved. Robust single-mode emission with a side-mode suppression ratio about 30 dB is continuously tunable by the heat sink temperature and injection current. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4816722]

Addresses: [Yao, Dan-Yang] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Yao, DY (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: zhangjinchuan@semi.ac.cn; fqliu@semi.ac.cn

ISSN: 0003-6951
--------------------------------------------------------------------------------

Record 172 of 495

Title: Electron energy and angle distribution of GaAs photocathodes

Author(s): Chen, ZH (Chen, Zhanghui); Jiang, XW (Jiang, Xiangwei); Li, JB (Li, Jingbo); Li, SS (Li, Shushen); Wang, LW (Wang, Linwang)

Source: JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 3 Article Number: 033523 DOI: 10.1063/1.4816045 Published: JUL 21 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A precise Monte Carlo model is developed to investigate the electron energy and angle distribution of the transmission-mode GaAs (100) photocathode at room temperature. Both distributions are important for high-quality electron sources. The results show that the energy loss (0.1309 eV) and the angle-dependent energy distribution curves fit well with experimental data. It is found that 65.24% of the emission electrons come from Gamma valley, 33.62% from L valley, and 1.15% from X valley. The peak of the energy distribution curve is contributed by both Gamma and L-valley electrons, while the high-energy part is contributed by Gamma-valley electrons rather than L electrons, which is different from previous inference and can be attributed to the narrow energy range of L-valley electrons. However, L-valley electrons have a larger angular spread than Gamma-valley electrons and lead to the spread of the emission cone. The further simulation indicates that increasing the hole concentration or the thickness of the first activation layer can improve the angle distribution, but the energy distribution will turn to be slightly more dispersive. Temperature effect on the two distributions is also analyzed. The energy distribution curve moves towards the higher energy while the angle distribution curve moves towards the lower value when the temperature declines. (C) 2013 AIP Publishing LLC.

Addresses: [Chen, Zhanghui; Jiang, Xiangwei; Li, Jingbo; Li, Shushen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Wang, Linwang] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.

Reprint Address: Chen, ZH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jbli@semi.ac.cn

ISSN: 0021-8979
--------------------------------------------------------------------------------

Record 173 of 495

Title: Investigation anisotropic mode splitting induced by electro-optic birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser

Author(s): Yu, JL (Yu, J. L.); Cheng, SY (Cheng, S. Y.); Lai, YF (Lai, Y. F.); Chen, YH (Chen, Y. H.)

Source: JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 3 Article Number: 033511 DOI: 10.1063/1.4813619 Published: JUL 21 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The mode splitting induced by electro-optic birefringence in an P-I-N InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser (VCSEL) has been studied by photocurrent difference spectroscopy (PCDS) at room temperature. The mode splitting, anisotropic broadening width, and the anisotropic integrated area of the two orthogonal polarized modes for a VCSEL device are determined. The mode splitting changes linearly with the injected current, which agree very well with theoretical calculations using a Jones matrix approach. It is demonstrated that the PCDS is a powerful tool to study the cavity anisotropy of a VCSEL device.

Addresses: [Yu, J. L.; Cheng, S. Y.; Lai, Y. F.] Fuzhou Univ, Coll Phys & Informat Engn, Inst Micro Nano Devices & Solar Cells, Fuzhou 350108, Fujian Province, Peoples R China.