Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

E-mail Addresses: tyang@semi.ac.cn

ISSN: 0256-307X

Record 247 of 495

Title: Continuous-Wave Operation of Terahertz Quantum Cascade Lasers at 3.2 THz

Author(s): Wang, T (Wang Tao); Liu, JQ (Liu Jun-Qi); Chen, JY (Chen Jian-Yan); Liu, YH (Liu Ying-Hui); Liu, FQ (Liu Feng-Qi); Wang, LJ (Wang Li-Jun); Wang, ZG (Wang Zhan-Guo)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 6 Article Number: 064201 DOI: 10.1088/0256-307X/30/6/064201 Published: JUN 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: We demonstrate continuous-wave (cw) operation of terahertz (THz) quantum cascade lasers emitting at 3.2 THz based on bound-to-continuum active region and semi-insulating surface-plasmon waveguide design. Optical power of 62mW with a threshold current density of 285 A/cm(2) is obtained at 10K from a 130-mu m-wide and 1.5-mm-long laser in cw operation. Maximum cw operation temperature is up to 60 K. In pulsed mode, peak optical power more than 100mW at 10K and 2.1mW at 85K are observed from a 230-mu m-wide and 2-mm-long device.

Addresses: [Wang Tao; Liu Jun-Qi; Chen Jian-Yan; Liu Ying-Hui; Liu Feng-Qi; Wang Li-Jun; Wang Zhan-Guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Liu, JQ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: jqliu@semi.ac.cn; fqliu@red.semi.ac.cn

ISSN: 0256-307X

Record 248 of 495

Title: Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates

Author(s): Emelyanov, EA (Emelyanov, E. A.); Kokhanenko, AP (Kokhanenko, A. P.); Pchelyakov, OP (Pchelyakov, O. P.); Loshkarev, ID (Loshkarev, I. D.); Seleznev, VA (Seleznev, V. A.); Putyato, MA (Putyato, M. A.); Semyagin, BR (Semyagin, B. R.); Preobrazhenskii, VV (Preobrazhenskii, V. V.); Niu, ZC (Niu, Zhicuan); Ni, HQ (Ni, Haiqiao)

Source: RUSSIAN PHYSICS JOURNAL Volume: 56 Issue: 1 Pages: 55-61 DOI: 10.1007/s11182-013-9994-7 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Using the method of molecular-beam epitaxy, GaAs films are grown on Si substrates tilted from the (001) plane by 6A degrees to the [110] direction. The GaAs films are grown both on Si surfaces terminated by arsenic atoms and on pseudo-morphic GaP/Si layers. The layers of GaAs are nucleated by the method of atomic-layer epitaxy at low temperatures. The resulting structures are found to differ in crystallographic orientation of the GaAs film with respect to the film tilt direction. The structures thus grown are examined by the methods of x-ray diffraction analysis and atomic force microscopy.

Addresses: [Emelyanov, E. A.; Pchelyakov, O. P.; Loshkarev, I. D.; Seleznev, V. A.; Putyato, M. A.; Semyagin, B. R.; Preobrazhenskii, V. V.] SB RAS, Rzhanov Inst Semicond Phys, Novosibirsk, Russia.

[Kokhanenko, A. P.] Natl Res Tomsk State Univ, Tomsk, Russia.

[Niu, Zhicuan; Ni, Haiqiao] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Emelyanov, EA (reprint author), SB RAS, Rzhanov Inst Semicond Phys, Novosibirsk, Russia.

E-mail Addresses: kokh@elefot.tsu.ru

ISSN: 1064-8887

Record 249 of 495

Title: Hybrid III-V/silicon single mode laser with periodic microstructures (vol 38, pg 842, 2013)

Author(s): Zhang, YJ (Zhang, Yejin); Qu, HW (Qu, Hongwei); Wang, HL (Wang, Hailing); Zhang, SRGL (Zhang, Siriguleng); Ma, SD (Ma, Shaodong); Qi, AY (Qi, Aiyi); Feng, ZG (Feng, Zhigang); Peng, HL (Peng, Hongling); Zheng, WH (Zheng, Wanhua)

Source: OPTICS LETTERS Volume: 38 Issue: 11 Pages: 1902-1902 DOI: 10.1364/OL.38.001902 Published: JUN 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Addresses: [Zhang, Yejin; Qu, Hongwei; Wang, Hailing; Zhang, Siriguleng; Ma, Shaodong; Qi, Aiyi; Feng, Zhigang; Peng, Hongling; Zheng, Wanhua] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing, Peoples R China.

Reprint Address: Zheng, WH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing, Peoples R China.

E-mail Addresses: whzheng@semi.ac.cn

ISSN: 0146-9592
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Record 250 of 495

Title: The magnetic switching process in MBE-grown Co2MnAl Heusler alloy film

Author(s): Qiao, S (Qiao, Shuang); Gao, HX (Gao, Haixia); Nie, SH (Nie, Shuaihua); Zhao, JH (Zhao, Jianhua); Zhang, XH (Zhang, Xinhui)

Source: SOLID STATE COMMUNICATIONS Volume: 163 Pages: 33-36 DOI: 10.1016/j.ssc.2013.03.027 Published: JUN 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Single-crystalline Co2MnAl Heusler alloy film has been successfully grown on GaAs (001) substrate by molecular-beam epitaxy (MBE). The complex multistep magnetic switchings with single, double, and triple loops, deriving from the in-plane uniaxial magnetic anisotropy superimposed with a cubic anisotropy, have been observed experimentally. All switching processes are revealed to be mediated by the sweeping of 90 degrees and 180 degrees domain walls, and can be explained successfully based on the domain energetics. Theoretical calculation of hard axis orientation using free energy density shows excellent agreement with the experimental result. (c) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Qiao, Shuang; Gao, Haixia; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui] Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhang, XH (reprint author), Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: xinhuiz@semi.ac.cn

ISSN: 0038-1098

Record 251 of 495

Title: Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature

Author(s): Hu, SX (Hu, Shaoxu); Han, PD (Han, Peide); Mi, YH (Mi, Yanhong); Xing, YP (Xing, Yupeng); Liang, P (Liang, Peng); Fan, YJ (Fan, Yujie)

Source: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Volume: 16 Issue: 3 Pages: 987-991 DOI: 10.1016/j.mssp.2013.02.008 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Selenium-hyperdoped silicon was prepared by ion implantation at 100 eV to a dose of 6 x 10(15) Se/cm(2), followed by furnace annealing at 500-900 degrees C for 30 min. A phase transition from amorphous to crystalline was observed for the sample annealed at 600 degrees C. Carrier density in the Se doping layer gradually increases with the annealing temperature and a high carrier/donor ratio of 7.5% was obtained at 900 degrees C. The effects of annealing temperature on the rectifying behavior and external quantum efficiency of n(+)p junctions formed on Se-hyperdoped silicon were also investigated. We found that 700 degrees C was the optimal annealing temperature for improving the crystallinity, below-bandgap absorption, junction rectification and external quantum efficiency of Se-doped samples. (C) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Hu, Shaoxu; Han, Peide; Mi, Yanhong; Xing, Yupeng; Liang, Peng; Fan, Yujie] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Hu, SX (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: hushaoxu@semi.ac.cn

ISSN: 1369-8001

Record 252 of 495

Title: Photoluminescence properties of porous InP filled with ferroelectric polymers

Author(s): Jia, CH (Jia, C. H.); Chen, YH (Chen, Y. H.); Jiang, YC (Jiang, Y. C.); Liu, FQ (Liu, F. Q.); Qu, SC (Qu, S. C.); Zhang, WF (Zhang, W. F.); Wang, ZG (Wang, Z. G.)

Source: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Volume: 111 Issue: 3 Pages: 695-699 DOI: 10.1007/s00339-013-7717-0 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Photoluminescence properties of porous InP are found to be strongly affected by infilling ferroelectric polymers. Based on the temperature- and excitation-power-dependent photoluminescence, the intensity suppression and blue shift of the near-band-edge emission are supposed to result from the passivation of surface states by introducing ferroelectric polymers. On the other hand, the significant enhancement of deep-level emission is caused by the increased concentration of phosphorus vacancies due to ion exchange when infilling the ferroelectric polymers into porous InP. The surface passivation of porous InP by ferroelectric polymers is useful for improving the performances of InP-based electronic and optoelectronic devices.

Addresses: [Jia, C. H.; Zhang, W. F.] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004, Peoples R China.

[Jia, C. H.; Zhang, W. F.] Henan Univ, Sch Phys & Elect, Kaifeng 475004, Peoples R China.

[Jia, C. H.; Chen, Y. H.; Jiang, Y. C.; Liu, F. Q.; Qu, S. C.; Wang, Z. G.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Chen, YH (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yhchen@red.semi.ac.cn

ISSN: 0947-8396

Record 253 of 495

Title: Stable p- and n-type doping of few-layer graphene/graphite

Author(s): Meng, XQ (Meng, Xiuqing); Tongay, S (Tongay, Sefaattin); Kang, J (Kang, Jun); Chen, ZH (Chen, Zhanghui); Wu, FM (Wu, Fengmin); Li, SS (Li, Shu-Shen); Xia, JB (Xia, Jian-Bai); Li, JB (Li, Jingbo); Wu, JQ (Wu, Junqiao)

Source: CARBON Volume: 57 Pages: 507-514 DOI: 10.1016/j.carbon.2013.02.028 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: ZnMg and NbCl5 were intercalated in graphite and the presence of such molecules between the graphene sheets results in n- and p-type doping, respectively. The doping effect is confirmed by Hall and Raman measurements and the intercalation process is monitored by scanning tunneling microscopy. After intercalation the carrier concentration increase almost an order of magnitude and reaches values as high as 10(19)and 10(18) cm(-3) for p- and n-type doping, respectively. For higher intercalation times, the intercalated graphite turns back to be as ordered as pristine one as evidenced by the reduction in the D peak in Raman measurements. Intercalation compounds show remarkable stability allowing us to permanently tune the physical properties of few-layer graphite. Our study has provided a new route to produce stable and functional graphite intercalation compounds and the results can be applied to other graphitic structures such as few-layer graphene on SiC. (C) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Meng, Xiuqing; Wu, Fengmin; Li, Jingbo] Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua 321004, Peoples R China.

[Tongay, Sefaattin; Wu, Junqiao] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA.

[Kang, Jun; Chen, Zhanghui; Li, Shu-Shen; Xia, Jian-Bai; Li, Jingbo] Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Li, JB (reprint author), Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua 321004, Peoples R China.

E-mail Addresses: jbli@semi.ac.cn

ISSN: 0008-6223

Record 254 of 495

Title: A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance

Author(s): Yu, GH (Yu, Guohao); Cai, Y (Cai, Yong); Wang, Y (Wang, Yue); Dong, ZH (Dong, Zhihua); Zeng, CH (Zeng, Chunhong); Zhao, DS (Zhao, Desheng); Qin, H (Qin, Hua); Zhang, BS (Zhang, Baoshun)

Source: IEEE ELECTRON DEVICE LETTERS Volume: 34 Issue: 6 Pages: 747-749 DOI: 10.1109/LED.2013.2259213 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this letter, a double-gate AlGaN/GaN high electron mobility transistor operated in a synchronized switching mode is demonstrated, and improved dynamic performances are obtained. The additional gate sits on top of the conventional gate and stretches 2/4 mu m to the source/drain electrodes, respectively. A positive voltage pulse is applied to the top gate and is synchronized with the ON-OFF switching pulse applied to the conventional gate. Such a double-gate driving method significantly improves the dynamic performances of the device. Moreover, it allows us to investigate the dynamic ON-resistance in the drift region in detail.

Addresses: [Yu, Guohao; Cai, Yong; Wang, Yue; Dong, Zhihua; Zeng, Chunhong; Zhao, Desheng; Qin, Hua; Zhang, Baoshun] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

[Yu, Guohao; Wang, Yue] Univ Chinese Acad Sci, Beijing 100049, Peoples R China.

[Yu, Guohao] Chinese Acad Sci, Inst Semicond, Beijing 10008, Peoples R China.

Reprint Address: Yu, GH (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

E-mail Addresses: ycai2008@sinano.ac.cn

ISSN: 0741-3106

Record 255 of 495

Title: 540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier

Author(s): Cui, K (Cui, Kai); Ma, WQ (Ma, Wenquan); Zhang, YH (Zhang, Yanhua); Huang, JL (Huang, Jianliang); Wei, Y (Wei, Yang); Cao, YL (Cao, Yulian); Guo, XL (Guo, Xiaolu); Li, Q (Li, Qiong)

Source: IEEE ELECTRON DEVICE LETTERS Volume: 34 Issue: 6 Pages: 759-761 DOI: 10.1109/LED.2013.2258135 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We report on a memory structure that only makes use of holes as the storage charges based on type-II GaSb/GaAs quantum dots (QDs) using an AlGaAs barrier. The C-V measurements confirm existence of quantum states in the GaSb dots and reveal the applied bias voltage range for the write/erase process by charging/discharging the QDs. A large hole activation energy value of 540 meV is obtained for the device measured by deep level transient spectroscopy. Our results indicate that type-II GaSb/GaAs QD system is a promising candidate for future memory devices.

Addresses: [Cui, Kai; Ma, Wenquan; Zhang, Yanhua; Huang, Jianliang; Wei, Yang; Cao, Yulian; Guo, Xiaolu; Li, Qiong] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Cui, K (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: wqma@semi.ac.cn

ISSN: 0741-3106

Record 256 of 495

Title: Tunable Distributed Feedback Quantum Cascade Lasers by a Sampled Bragg Grating

Author(s): Zhuo, N (Zhuo, Ning); Zhang, JC (Zhang, Jinchuan); Liu, FQ (Liu, Fengqi); Wang, LJ (Wang, Lijun); Tan, S (Tan, Song); Yan, FL (Yan, Fangliang); Liu, JQ (Liu, Junqi); Wang, ZG (Wang, Zhanguo)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 11 Pages: 1039-1042 DOI: 10.1109/LPT.2013.2257716 Published: JUN 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A novel complex-coupled distributed feedback quantum cascade laser emitting around lambda similar to 4.7 mu m is demonstrated by a sampled Bragg grating (SBG). The key superiorities are to utilize the +1st-order (positive first order) transmission of the SBG for laser single-mode operation, and use conventional holographic exposure combined with the optical photolithography technology to fabricate the sampled grating, which lead to improved flexibility, repeatability, and cost-effectiveness. Selective single-mode lasing with a mean side mode suppression ratio above 20 dB and wavelength coverage range of 87 nm is achieved by changing the sampling period.

Addresses: [Zhuo, Ning; Zhang, Jinchuan; Liu, Fengqi; Wang, Lijun; Tan, Song; Yan, Fangliang; Liu, Junqi; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Zhuo, Ning; Zhang, Jinchuan; Liu, Fengqi; Wang, Lijun; Tan, Song; Yan, Fangliang; Liu, Junqi; Wang, Zhanguo] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Zhuo, N (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: zhangjinchuan@semi.ac.cn; fqliu@semi.ac.cn

ISSN: 1041-1135
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Record 257 of 495

Title: Dislocation Scattering in ZnMgO/ZnO Heterostructures

Author(s): Sang, L (Sang, Ling); Yang, SY (Yang, Shao Yan); Liu, GP (Liu, Gui Peng); Zhao, GJ (Zhao, Gui Juan); Liu, CB (Liu, Chang Bo); Gu, CY (Gu, Cheng Yan); Wei, HY (Wei, Hong Yuan); Liu, XL (Liu, Xiang Lin); Zhu, QS (Zhu, Qin Sheng); Wang, ZG (Wang, Zhan Guo)

Source: IEEE TRANSACTIONS ON ELECTRON DEVICES Volume: 60 Issue: 6 Pages: 2077-2079 DOI: 10.1109/TED.2013.2255599 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The role of dislocation scattering in electron mobility in ZnMgO/ZnO heterostructures was studied. It was found that dislocation scattering was dominant in the low-electron concentration region. The total low-temperature mobility was calculated by considering dislocation scattering and interface-roughness scattering (IRS) together. The sheet density of dis-locations was chosen as N-dis = 1.5 x 10(8) cm(-2) and the IRS parameters were Delta = 5.206 and Lambda = 30 angstrom. We obtained a good fit between our calculated results and experimental data reported in the works referenced.

Addresses: [Sang, Ling; Yang, Shao Yan; Liu, Gui Peng; Zhao, Gui Juan; Liu, Chang Bo; Gu, Cheng Yan; Wei, Hong Yuan; Liu, Xiang Lin; Zhu, Qin Sheng; Wang, Zhan Guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Sang, L (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

E-mail Addresses: lingsang@semi.ac.cn; sh-yyang@semi.ac.cn; liugp@semi.ac.cn; gjzhao@semi.ac.cn; liuchb@semi.ac.cn; chygu@semi.ac.cn; why@semi.ac.cn; xlliu@semi.ac.cn; qszhu@semi.ac.cn; zgwang@red.semi.ac.cn

ISSN: 0018-9383

Record 258 of 495

Title: Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy

Author(s): Su, XJ (Su, X. J.); Xu, K (Xu, K.); Ren, GQ (Ren, G. Q.); Wang, JF (Wang, J. F.); Xu, Y (Xu, Y.); Zeng, XH (Zeng, X. H.); Zhang, JC (Zhang, J. C.); Cai, DM (Cai, D. M.); Zhou, TF (Zhou, T. F.); Liu, ZH (Liu, Z. H.); Yang, H (Yang, H.)

Source: JOURNAL OF CRYSTAL GROWTH Volume: 372 Pages: 43-48 DOI: 10.1016/j.jcrysgro.2013.03.018 Published: JUN 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A detailed study on electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy is presented. There are two distinctive regions with non-homogeneous electrical and optical properties in N-face of GaN revealed by wet etching, Raman and cathodoluminescence. One region exclusively exhibited stronger donor-acceptor pair emission and higher carrier concentration due to impurity incorporation. A strong red-shift of near band edge emission of similar to 24 meV was also observed owing to additional carrier concentration. Furthermore, the activation energy difference of the etching process between the two regions is similar to 0.12 eV. The distinctive etching topography was probably due to the difference of surface potentials related to the level of carrier concentration in GaN. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Su, X. J.; Xu, K.; Ren, G. Q.; Wang, J. F.; Xu, Y.; Zeng, X. H.; Zhang, J. C.; Cai, D. M.; Zhou, T. F.; Liu, Z. H.; Yang, H.] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

[Su, X. J.; Xu, K.] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Xu, K.; Ren, G. Q.; Wang, J. F.; Xu, Y.; Zhang, J. C.; Cai, D. M.] Suzhou Nanowin Sci & Technol Co Ltd, Suzhou 215123, Peoples R China.

Reprint Address: Xu, K (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

E-mail Addresses: kxu2006@sinano.ac.cn

ISSN: 0022-0248

Record 259 of 495

Title: Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping

Author(s): Yang, XG (Yang, Xiaoguang); Wang, KF (Wang, Kefan); Gu, YX (Gu, Yongxian); Ni, HQ (Ni, Haiqiao); Wang, XD (Wang, Xiaodong); Yang, T (Yang, Tao); Wang, ZG (Wang, Zhanguo)

Source: SOLAR ENERGY MATERIALS AND SOLAR CELLS Volume: 113 Pages: 144-147 DOI: 10.1016/j.solmat.2013.02.005 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: This paper reports on significantly improved efficiency of InAs/GaAs quantum dot (QD) solar cells by directly doping Si into InAs QDs during the QD growth. The devices which contain five stacked QDs in their i-regions were grown using molecular beam epitaxy. It is shown that using appropriate Si-doing, the open-circuit voltage of the device can be increased to 0.84 V. This is dramatically higher than the value of 0.67 V obtained in undoped device using the same structure. Moreover, the efficiency of corresponding device is improved from 11.3% to 17.0%. This improvement in efficiency is attributed to greatly reduced energy loss in the devices that results from the reduction of the defect density in the stacked InAs/GaAs QD layers due to the doping. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Yang, Xiaoguang; Wang, Kefan; Gu, Yongxian; Yang, Tao; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Ni, Haiqiao] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Wang, Xiaodong] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

Reprint Address: Yang, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: tyang@semi.ac.cn

ISSN: 0927-0248

Record 260 of 495

Title: The effect of magnetic ordering on light emitting intensity of Eu-doped GaN