Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Times Cited in Web of Science: 3

Total Times Cited: 3

Abstract: We demonstrate a technique of generating a binary phase coded microwave pulse based on two cascaded polarization modulators (PolMs). The first PolM (PolM1) followed by an optical band-pass filter is used to generate two phase-locked and polarization orthogonal optical frequencies. The second PolM (PolM2) aims to change their polarization states. A polarizer attached to the output of PolM2 allows only one of the two optical frequencies passing, or combines them with positive/negative phase difference. By changing the voltage level of the electrical modulation signal applied to PolM2, a series of binary phase coded microwave pulses is directly generated from a continuous wave microwave signal in the optical domain. In the proposed system, the precise amplitude control or amplification of the modulation signal are avoided. The waveform of the generated pulse is very stable. For a proof-of-concept experiment, a series of 25-GHz pulses with similar to 2.08-ns pulse duration and similar to 10.24-ns repetition time is generated. The pulses are phase coded by a 13-bit Barker code.

Addresses: [Wang, Li Xian; Li, Wei; Wang, Hui; Zheng, Jian Yu; Liu, Jian Guo; Zhu, Ning Hua] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Wang, LX (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: lxwang@semi.ac.cn; liwei05@semi.ac.cn; whui@semi.ac.cn; jyzheng@semi.ac.cn; jgliu@semi.ac.cn; nhzhu@semi.ac.cn

ISSN: 1041-1135

Record 348 of 495

Title: High Performance Surface Grating Distributed Feedback Quantum Cascade Laser

Author(s): Zhang, JC (Zhang, Jinchuan); Liu, FQ (Liu, Fengqi); Wang, LJ (Wang, Lijun); Chen, JY (Chen, Jianyan); Zhai, SQ (Zhai, Shenqiang); Liu, JQ (Liu, Junqi); Wang, ZG (Wang, Zhanguo)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 7 Pages: 686-689 DOI: 10.1109/LPT.2013.2248081 Published: APR 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We report on the development of lambda similar to 4.7 mu m continuous-wave (CW) operation of surface grating distributed feedback (DFB) quantum cascade lasers (QCLs). A high wall plug efficiency (WPE) of 7% is obtained at 15 degrees C from a single facet producing over 0.85 W of CW output power. The threshold current density of DFB QCL is as low as 1.19 kA/cm at 15 degrees C and 2.29 kA/cm at 90 degrees C in CW mode. Single-mode operation with side mode suppression ratio above 25 dB is observed in the working temperature of 15 degrees-95 degrees C.

Addresses: [Zhang, Jinchuan; Liu, Fengqi; Wang, Lijun; Chen, Jianyan; Zhai, Shenqiang; Liu, Junqi; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Zhang, Jinchuan; Liu, Fengqi; Wang, Lijun; Chen, Jianyan; Zhai, Shenqiang; Liu, Junqi; Wang, Zhanguo] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Zhang, JC (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: fqliu@semi.ac.cn; ljwang@semi.ac.cn

ISSN: 1041-1135
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Record 349 of 495

Title: Continuous blood separation utilizing spiral filtration microchannel with gradually varied width and micro-pillar array

Author(s): Geng, ZX (Geng, Zhaoxin); Ju, YR (Ju, Yanrui); Wang, W (Wang, Wei); Li, ZH (Li, Zhihong)

Source: SENSORS AND ACTUATORS B-CHEMICAL Volume: 180 Special Issue: SI Pages: 122-129 DOI: 10.1016/j.snb.2012.06.064 Published: APR 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: A microfluidic separation device that uses the cross flow and the centrifugation effect to separate human plasma from whole blood has been designed, fabricated and evaluated. The chip mainly consists of a spiral channel divided into inner and outer microchannels by micropillar arrays, which are employed to filter blood cells and plasma. The major feature of this chip is that the width of the inner channel decreases gradually from the inlet Lathe outlet in order to increase the separation efficiency. Clogging and jamming in this filtration structure are efficiently alleviated. The performances of the separation device have been investigated theoretically and experimentally. Due to high purity of plasma and compact structure, this device can be used as either a plasma extraction device solely, or a pretreatment component that is integrated with other microfluidic device for point-of-care diagnostics. (C) 2012 Elsevier B.V. All rights reserved.

Addresses: [Geng, Zhaoxin; Ju, Yanrui; Wang, Wei; Li, Zhihong] Peking Univ, Inst Microelect, Natl Key Lab Nano Micro Fabricat Technol, Beijing 100871, Peoples R China.

[Geng, Zhaoxin] Minzu Univ China, Sch Informat Engn, Beijing 100081, Peoples R China.

[Geng, Zhaoxin] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Li, ZH (reprint author), Peking Univ, Inst Microelect, Natl Key Lab Nano Micro Fabricat Technol, Beijing 100871, Peoples R China.

E-mail Addresses: Zhhli@ime.pku.edu.cn

ISSN: 0925-4005

Record 350 of 495

Title: Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates

Author(s): Dong, L (Dong, Lin); Sun, GS (Sun, Guosheng); Yu, J (Yu, Jun); Zheng, L (Zheng, Liu); Liu, XF (Liu, Xingfang); Zhang, F (Zhang, Feng); Yan, GG (Yan, Guoguo); Li, XG (Li, Xiguang); Wang, ZG (Wang, Zhanguo)

Source: APPLIED SURFACE SCIENCE Volume: 270 Pages: 301-306 DOI: 10.1016/j.apsusc.2013.01.018 Published: APR 1 2013

Times Cited in Web of Science: 3

Total Times Cited: 3

Abstract: In situ etching and epitaxial growth have been performed on 4H-SiC 4 degrees off-axis substrates with 100 mm diameter. In situ etching process optimizations lead to obtain step-bunching free epilayer surfaces with roughnesses of 0.2 nm and 0.8 nm, which were grown on the substrates with and without chemical mechanical polishing, respectively. Yet the epilayer surfaces free of step-bunching are more likely to suffer from various types of morphological defects than the ones with step-bunching. An increase in chlorine/silicon ratio during epitaxy can effectively suppress the appearance of defects on the step-bunching free epilayer surfaces. Using optimized epitaxial processes, we can obtain the total morphological defects density lower than 1 cm(-2) on 4H-SiC epilayers with surface roughness of 0.2 nm. (c) 2013 Elsevier B.V. All rights reserved.

Addresses: [Dong, Lin; Sun, Guosheng; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Sun, Guosheng; Yu, Jun; Li, Xiguang] Tianyu Semicond Technol Co Ltd, Dongguan 523000, Peoples R China.

Reprint Address: Dong, L (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: donglin09@semi.ac.cn

ISSN: 0169-4332
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Record 351 of 495

Title: Implementation of wavelength reusing upstream service based on distributed intensity conversion in ultrawideband-over-fiber system

Author(s): Zheng, JY (Zheng, Jianyu); Wang, H (Wang, Hui); Wang, LX (Wang, Lixian); Zhu, NH (Zhu, Ninghua); Liu, JG (Liu, Jianguo); Wang, SL (Wang, Sunlong)

Source: OPTICS LETTERS Volume: 38 Issue: 7 Pages: 1167-1169 Published: APR 1 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: We propose and demonstrate a simple scheme for generating the ultrawideband (UWB) signals and reusing the wavelength for upstream service simultaneously by using a distributed polarization modulation-to-intensity modulation convertor. Through adjusting the static phase difference between transverse electric and transverse magnetic modes of the optical carrier (OC) and the angle between the polarization direction of the OC and the principal axis of the polarizers, the UWB doublet-like signals were generated. Meanwhile, the error-free transmission of the upstream signals with bit rate of 1.25 Gbit/s over 10 km fiber is achieved. The power penalty resulting from the interference of downstream signals is less than 0.3 dB. (C) 2013 Optical Society of America

Addresses: [Zheng, Jianyu; Wang, Hui; Wang, Lixian; Zhu, Ninghua; Liu, Jianguo; Wang, Sunlong] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 10083, Peoples R China.

Reprint Address: Liu, JG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 10083, Peoples R China.

E-mail Addresses: jgliu@semi.ac.cn

ISSN: 0146-9592

Record 352 of 495

Title: Structural, morphological and magnetic characteristics of Tb-implanted GaN and AlGaN films

Author(s): Gao, XG (Gao, Xingguo); Liu, C (Liu, Chao); Yin, CH (Yin, Chunhai); Tao, DY (Tao, Dongyan); Yang, C (Yang, Cheng); Man, BY (Man, Baoyuan)

Source: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS Volume: 178 Issue: 6 Pages: 349-353 DOI: 10.1016/j.mseb.2012.12.005 Published: APR 1 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Diluted-magnetic GaN:Tb and AlGaN:Tb films have been fabricated by implanting Tb+ ions into c-plane (0 0 0 1) GaN and AlGaN films and a subsequent annealing process. The structural, morphological and magnetic characteristics of the samples have been investigated by means of X-ray diffraction (XRD), atomic force microscopy (AFM) and superconducting quantum interference device (SQUID), respectively. The XRD and AFM analyses show that the annealing process can effectively recover the crystalline degradation caused by implantation. According to the SQUID analysis, both the GaN:Tb and the AlGaN:Tb films exhibit clear room-temperature ferromagnetism. It is very interesting to find the saturation magnetization value of the AlGaN:Tb sample is almost two times that of GaN:Tb sample. The possible origin of the ferromagnetism of the samples was discussed briefly. (C) 2012 Elsevier B.V. All rights reserved.

Addresses: [Gao, Xingguo; Yang, Cheng; Man, Baoyuan] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China.

[Gao, Xingguo] Shandong Polytech Univ, Sch Sci, Jinan 250353, Peoples R China.

[Liu, Chao; Yin, Chunhai; Tao, Dongyan] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Liu, C (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: cliu@semi.ac.cn; byman@sdnu.edu.cn

ISSN: 0921-5107

Record 353 of 495

Title: Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy

Author(s): Guo, XL (Guo, Xiaolu); Ma, WQ (Ma, Wenquan); Huang, JL (Huang, Jianliang); Zhang, YH (Zhang, Yanhua); Wei, Y (Wei, Yang); Cui, K (Cui, Kai); Cao, YL (Cao, Yulian); Li, Q (Li, Qiong)

Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 28 Issue: 4 Article Number: 045004 DOI: 10.1088/0268-1242/28/4/045004 Published: APR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We investigate the background doping level, mobility and conductivity of the absorber layer using the type-II InAs/GaSb structure grown by molecular beam epitaxy for the mid, long and very long wavelength (MW, LW and VLW) bands between 77 K and room temperature. It is found that the conduction of the absorber layer changes from p-to n-type when increasing temperature. The transition temperature occurs at 210, 140 and 85 K and the electron activation energy is 106, 71 and 32 meV for the MW, LW and VLW samples, respectively. The conduction change with respect to temperature is attributed to different activation energy between the residual electrons in the InAs layer and the residual holes in the GaSb layer. The detailed trend of the electrical properties is also discussed.

Addresses: [Guo, Xiaolu; Ma, Wenquan; Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Cui, Kai; Cao, Yulian; Li, Qiong] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Guo, XL (reprint author), Chinese Acad Sci, Inst Semicond, Qinghua East Rd A 35, Beijing 100083, Peoples R China.

E-mail Addresses: wqma@semi.ac.cn

ISSN: 0268-1242

Record 354 of 495

Title: Dual-beam optically injected semiconductor laser for radio-over-fiber downlink transmission with tunable microwave subcarrier frequency

Author(s): Liu, YP (Liu, Yuping); Qi, XQ (Qi, Xiaoqiong); Xie, L (Xie, Liang)

Source: OPTICS COMMUNICATIONS Volume: 292 Pages: 117-122 DOI: 10.1016/j.optcom.2012.11.008 Published: APR 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We propose a downlink broadcast transmission scheme of radio-over-fiber (RoF) system based on period-one (P1) dynamic of dual-beam optically injected semiconductor laser with tunable microwave subcarrier frequency. The transmission performance of 2.5 Gb/s data in a 60 GHz RoF system is demonstrated through numerical simulations. It is found that the proposed transmission scheme can easily generate a single-sideband (SSB) optical modulation by adjusting the injection strength level of two master lasers (ML), which is favorable to reduce the fading effect due to chromatic dispersion. Furthermore, influences of the pulse amplitudes and duty cycles of the downlink data on the transmission properties are investigated. It is observed that the oscillation of the relative power at the base station induced by fiber dispersion does not vary apparently with the modulation parameters. Once the SSB spectrum is generated by dual-beam optical injection, the downlink transmission performance of the proposed RoF system keeps good stability and reliability. (C) 2012 Elsevier B.V. All rights reserved.

Addresses: [Liu, Yuping; Qi, Xiaoqiong; Xie, Liang] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Qi, XQ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: xqqi@semi.ac.cn

ISSN: 0030-4018

Record 355 of 495

Title: Chemical trends of magnetic interaction in Mn-doped III-V semiconductors

Author(s): Peng, HW (Peng, Haowei); Li, JB (Li, Jingbo); Wei, SH (Wei, Su-Huai)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 12 Article Number: 122409 DOI: 10.1063/1.4799164 Published: MAR 25 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The trends of magnetic coupling strength in Mn-doped III-V semiconductors are explained using a physically transparent band-coupling model, based on first-principles calculations. According to this model, the stability of the ferromagnetism in Mn-doped III-V semiconductors should increase with both the strength of p-d coupling and an effective coupling range parameter, alpha. However, these two quantities counteract to each other, i.e., increased p-d coupling strength means a decreased alpha value. Therefore, this competition will lead to the non-monotonic variation of ferromagnetic interaction in Mn-doped common-cation III-V semiconductors as the anion becomes heavier. Our results suggest that Mn-doped GaAs and AlAs are optimal materials for high T-C spintronics, in good agreement with experimental observations. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799164]

Addresses: [Peng, Haowei; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Wei, Su-Huai] Natl Renewable Energy Lab, Golden, CO 80401 USA.

Reprint Address: Peng, HW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jbli@semi.ac.cn

ISSN: 0003-6951
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Record 356 of 495

Title: Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors

Author(s): Deng, HX (Deng, Hui-Xiong); Wei, SH (Wei, Su-Huai); Li, SS (Li, Shu-Shen); Li, JB (Li, Jingbo); Walsh, A (Walsh, Aron)

Source: PHYSICAL REVIEW B Volume: 87 Issue: 12 Article Number: 125203 DOI: 10.1103/PhysRevB.87.125203 Published: MAR 21 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Amorphous semiconductors are known to give rise to greatly reduced conductivity relative to their crystalline counterparts, which makes the recent development of amorphous oxide semiconductors with high electron mobility unexpected. Using first-principles molecular dynamics and electronic structure simulations, we have analyzed the electronic and optical properties of covalent and ionic oxide amorphous semiconductors. We observe that in covalent systems, amorphization introduces deep defect states inside the gap, resulting in a substantial deterioration of electrical conductivity. In contrast, in ionic systems, such as the transparent conducting oxide ZnO, amorphization does not create deep carrier-recombination centers, so the oxides still exhibit good conductivity and visible transparency relative to the crystalline phases. The origin of the conductivity imbalance between covalent and ionic amorphous semiconductors can be explained using a band coupling mechanism. DOI: 10.1103/PhysRevB.87.125203

Addresses: [Deng, Hui-Xiong; Wei, Su-Huai] Natl Renewable Energy Lab, Golden, CO 80401 USA.

[Li, Shu-Shen; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Walsh, Aron] Univ Bath, Ctr Sustainable Chem Technol, Bath BA2 7AY, Avon, England.

[Walsh, Aron] Univ Bath, Dept Chem, Bath BA2 7AY, Avon, England.

Reprint Address: Deng, HX (reprint author), Natl Renewable Energy Lab, Golden, CO 80401 USA.

ISSN: 1098-0121

Record 357 of 495

Title: Pseudomagnetoexcitons in strained graphene bilayers without external magnetic fields

Author(s): Wang, ZG (Wang, Zhigang); Fu, ZG (Fu, Zhen-Guo); Zheng, FW (Zheng, Fawei); Zhang, P (Zhang, Ping)

Source: PHYSICAL REVIEW B Volume: 87 Issue: 12 Article Number: 125418 DOI: 10.1103/PhysRevB.87.125418 Published: MAR 18 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We propose a strained graphene double-layer (SGDL) system for detecting pseudomagnetoexcitons (PME) in the absence of external magnetic fields. The carriers in each graphene layer experience different strong pseudomagnetic fields (PMFs) due to strain engineering, which give rise to Landau quantization. The pseudo-Landau levels of electron-hole pairs under inhomogeneous PMFs in the SGDL are obtained analytically in the absence of Coulomb interactions. Based on the derived optical absorption selection rule for PMEs, we interpret the optical absorption spectra as indicating the formation of Dirac-type PMEs. We also predict that in the presence of inhomogeneous PMFs, the superfluidity-normal phase-transition temperature of PMEs is greater than that under homogeneous PMFs. DOI: 10.1103/PhysRevB.87.125418

Addresses: [Wang, Zhigang; Fu, Zhen-Guo; Zheng, Fawei; Zhang, Ping] Inst Appl Phys & Computat Math, LCP, Beijing 100088, Peoples R China.

[Fu, Zhen-Guo] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

[Zhang, Ping] Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China.

Reprint Address: Zhang, P (reprint author), Inst Appl Phys & Computat Math, LCP, POB 8009, Beijing 100088, Peoples R China.

E-mail Addresses: zhang_ping@iapcm.ac.cn

ISSN: 1098-0121

Record 358 of 495

Title: Wavelength and Mode-Spacing Tunable Dual-Mode Distributed Bragg Reflector Laser

Author(s): Yu, LQ (Yu, Liqiang); Lu, D (Lu, Dan); Zhao, LJ (Zhao, Lingjuan); Li, Y (Li, Yan); Ji, C (Ji, Chen); Pan, JQ (Pan, Jiaoqing); Zhu, HL (Zhu, Hongliang); Wang, W (Wang, Wei)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 6 Pages: 576-579 DOI: 10.1109/LPT.2013.2243723 Published: MAR 15 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: In this letter, we report a novel mode-beating distributed Bragg reflector (DBR) laser with dual-mode output. Both the working wavelengths and mode spacing of the dual-mode laser can be tuned when the currents injected into the DBR laser are adjusted. The tuning ranges of the laser wavelength and mode-beating frequency are [1527.20 nm, 1531.04 nm] and [91.88 GHz, 94.02 GHz], respectively. A fourth harmonic injection locking is also demonstrated to achieve a synchronized RF output at 93.23 GHz. The phase noise of the RF output is measured by using the down-conversion method. A single sideband phase noise of 96.92 dBc/Hz with 1-MHz offset at a down-converted frequency of 13.23 GHz is achieved.

Addresses: [Yu, Liqiang; Lu, Dan; Zhao, Lingjuan; Ji, Chen; Pan, Jiaoqing; Zhu, Hongliang; Wang, Wei] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Li, Yan] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China.

Reprint Address: Yu, LQ (reprint author), Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: yuliqiang10@semi.ac.cn; ludan@semi.ac.cn; ljzhao@semi.ac.cn; liyan1980@bupt.edu.cn; chenji@semi.ac.cn; jqpan@semi.ac.cn; zhuhl@red.semi.ac.cn; wwang@semi.ac.cn

ISSN: 1041-1135
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Record 359 of 495

Title: Hybrid III -V/silicon single-mode laser with periodic microstructures

Author(s): Zhang, YJ (Zhang, Yejin); Qu, HW (Qu, Hongwei); Wang, HL (Wang, Hailing); Zhang, SRGL (Zhang, Siriguleng); Ma, SD (Ma, Shaodong); Qi, AY (Qi, Aiyi); Feng, ZG (Feng, Zhigang); Peng, HL (Peng, Hongling); Zheng, WH (Zheng, Wanhua)

Source: OPTICS LETTERS Volume: 38 Issue: 6 Pages: 842-844 Published: MAR 15 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: In this Letter, a III-V/silicon hybrid single-mode laser operating at C band for photonic integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned silicon-on insulator through wafer to wafer directly. The mode selected mechanism based on a hybrid III-V/silicon straight cavity with periodic microstructures is applied, which only need low cost i-line projection photolithography in the whole technological process. At room temperature, we obtain 0.62 mW output power in continuous-wave. The side mode suppression ratio of larger than 20 dB is obtained from experiments. Over 10,000 h lifetime can be reached. (C) 2013 Optical Society of America