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Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure


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Reprint Address: Zhang, P (reprint author), Xi An Jiao Tong Univ, Dept Nucl Sci & Technol, Xian 710049, Peoples R China.

E-mail Addresses: pengzhang@xjtu.edu.cn; zhang_ping@iapcm.ac.cn

ISSN: 0021-8979
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Record 447 of 495

Title: Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes

Author(s): Zhang, YY (Zhang, Yiyun); Zheng, HY (Zheng, Haiyang); Guo, EQ (Guo, Enqing); Cheng, Y (Cheng, Yan); Ma, J (Ma, Jun); Wang, LC (Wang, Liancheng); Liu, ZQ (Liu, Zhiqiang); Yi, XY (Yi, Xiaoyan); Wang, GH (Wang, Guohong); Li, JM (Li, Jinmin)

Source: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 1 Article Number: 014502 DOI: 10.1063/1.4772669 Published: JAN 7 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Light extraction efficiency (LEE) droop as an important factor contributing to the efficiency droop of InGaN-based light-emitting diodes (LEDs) has been demonstrated and investigated in detail. The LEE droop effect is induced by the spatial dependence of the extraction efficiency of photons inside of the LED devices and the aggravating crowding effect of the injection electrons around n-type electrodes as injection current increases. A current blocking layer is introduced to alleviate the LEE droop effect. And the light output power of the LEDs is also improved by 43% at an injection current of 350 mA. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772669]

Addresses: [Zhang, Yiyun; Guo, Enqing; Cheng, Yan; Ma, Jun; Wang, Liancheng; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Guohong; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

[Zhang, Yiyun] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China.

[Zheng, Haiyang] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

Reprint Address: Yi, XY (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: spring@semi.ac.cn

ISSN: 0021-8979


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Record 448 of 495

Title: First-principles study on strontium titanate for visible light photocatalysis

Author(s): Liu, HF (Liu, Hongfei); Dong, HF (Dong, Huafeng); Meng, XQ (Meng, Xiuqing); Wu, FM (Wu, Fengmin)

Source: CHEMICAL PHYSICS LETTERS Volume: 555 Pages: 141-144 DOI: 10.1016/j.cplett.2012.11.005 Published: JAN 3 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Density functional calculations have been performed on the electronic structure of donor-acceptor (V-N, Nb-N, Cr-C and Mo-C) co-doped SrTiO3 to improve their photocatalytic activity in visible light region. By analyzing the electronic structure of pure and co-doped SrTiO3, we propose that the Mo-C co-doped system is promising materials for the visible light photocatalyst. It is found that the doping of Mo-C complex may shift the valence band edge up significantly, while keeping the conduction band edge almost unchanged. The calculated defect binding energies indicate that the co-doped systems are energetically favorable than their respective mono-doped systems. (C) 2012 Elsevier B. V. All rights reserved.

Addresses: [Liu, Hongfei; Dong, Huafeng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Meng, Xiuqing; Wu, Fengmin] Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua 321004, Peoples R China.

Reprint Address: Liu, HF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: liuhf@semi.ac.cn

ISSN: 0009-2614
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Record 449 of 495

Title: Optimum design of cam curve of zoom system based on Zemax

Author(s): Gao, YH (Gao, Yuhan); Yang, ZQ (Yang, Zhiqing); Zhao, WX (Zhao, Weixing); Jiang, B (Jiang, Bo); Li, DM (Li, Dongmei); Li, MS (Li, Mingshan)

Source: OPTIK Volume: 124 Issue: 23 Pages: 6358-6362 DOI: 10.1016/j.ijleo.2013.05.042 Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Cam curve design is an indispensable step for a zoom system design. A novel method of designing cam curve based on Zemax is presented in this article. By utilizing Zemax programming language (ZPL) to create a program, which can accurately produce the data and shape of a cam curve, and obtain the curve fitting equation of the cam curve by using least squares method. Meanwhile, the program can figure out the continuous change of MTF during the whole zooming process, which helps us to evaluate the optical performance and imaging characters at any focal length for a zoom system. It can improve the efficiency and accuracy of a zoom system design, which has significant value for engineering application. (C) 2013 Elsevier GmbH. All rights reserved.

Addresses: [Gao, Yuhan; Yang, Zhiqing; Jiang, Bo; Li, Dongmei; Li, Mingshan] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Zhao, Weixing] Nanjing Optotek Corp, Nanjing 210001, Jiangsu, Peoples R China.

Reprint Address: Gao, YH (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: gaoyuhan@126.com

ISSN: 0030-4026
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Record 450 of 495

Title: Polarization properties of Rayleigh backscattering with a high degree of coherence in single-mode fibers

Author(s): Xu, TW (Xu, Tuanwei); Ren, MZ (Ren, Meizhen); Li, F (Li, Fang)

Source: OPTIK Volume: 124 Issue: 24 Pages: 6790-6794 DOI: 10.1016/j.ijleo.2013.05.098 Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The state and degree of polarization (SOP, DOP) of Rayleigh backscattering (RB) are analyzed by using Jones calculus for the case the source coherent length is larger than the fiber length. It shows that the SOP of RB is the same as the SOP of input light, and the fiber disturbance does not influence the SOP of RB. The DOP of RB is also the same as that of input light. The corresponding experiments have been carried out, and the results agree well with all the predictions. (C) 2013 Elsevier GmbH. All rights reserved.

Addresses: [Xu, Tuanwei; Ren, Meizhen; Li, Fang] Chinese Acad Sci, Optoelect Syst Lab, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Xu, TW (reprint author), Chinese Acad Sci, Optoelect Syst Lab, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: xutuanwei@semi.ac.cn

ISSN: 0030-4026


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Record 451 of 495

Title: Improved open-circuit voltage of silicon nanowires solar cells by surface passivation

Author(s): Yang, P (Yang, Ping); Zeng, XB (Zeng, Xiangbo); Xie, XB (Xie, Xiaobing); Zhang, XD (Zhang, Xiaodong); Li, H (Li, Hao); Wang, ZG (Wang, Zhanguo)

Source: RSC ADVANCES Volume: 3 Issue: 47 Pages: 24971-24974 DOI: 10.1039/c3ra42823k Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The surface recombination at the surface of silicon nanowires (SiNWs) deteriorates the performance of SiNWs solar cells and thus the reduction of the SiNWs surface recombination becomes a crucial issue. In this paper, we observe an improved SiNW surface passivation by hydrogenated amorphous silicon (a-Si:H). The results show that a thicker i-layer results in a higher open-circuit voltage V-oc. That can be ascribed to the better passivation by thicker intrinsic a-Si:H. The dark current-voltage data reveal that the reverse leakage current and the diode ideality factor at high forward bias decrease monotonically with increasing the thickness of i-layer. Moreover, for the first time, we observe that the lower V-oc is associated with the capacitance-voltage (C-V) curve shifting toward higher positive voltage. We propose that the shift of the curve is related to the capacitance affected by the surface states. Finally we prove that the improvement in the NW solar cell performance, especially the V-oc, can be attributed to the reduction of the surface states on SiNWs.

Addresses: [Yang, Ping; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Zeng, Xiangbo; Xie, Xiaobing; Zhang, Xiaodong; Li, Hao] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Zeng, XB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: xbzeng@semi.ac.cn

ISSN: 2046-2069
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Record 452 of 495

Title: Enhanced Light Emission of InGaN Light-Emitting-Diodes by Nanosphere Lithography Generated Photonic Crystals with Different Geometries

Author(s): Zheng, HY (Zheng, Haiyang); Wu, K (Wu, Kui)

Source: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Volume: 2 Issue: 11 Pages: R241-R244 DOI: 10.1149/2.021311jss Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: This paper has proposed a simple, low-cost and high-throughput method to fabricate the pillar, cone and volcano photonic crystal (PhC) light-emitting diodes (LEDs) on the p-GaN surface using self-assembled nanosphere lithography (NSL) process to improve the light emission of InGaN-based light-emitting diodes (LEDs). A monolayer of self-assembled nanospheres has served as an etching mask for pattern transfer to the p-GaN layer, resulting in hexagonal PhC arrays with different geometrical patterns. Among the different patterns, LEDs with volcano PhC structures have exhibited the best optical property. At inject current of 350 mA, the light output power (LOP) of the volcano PhC LEDs has been enhanced by 43%, compared to that of the conventional LEDs. The volcano PhC LEDs have also exhibited emission divergence angle reduction of 19.8 degrees with respect to the conventional ones. Their emission characteristics and mechanisms have been further investigated with finite-difference time-domain (FDTD) simulations. (C) 2013 The Electrochemical Society. All rights reserved.

Addresses: [Zheng, Haiyang; Wu, Kui] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

[Wu, Kui] Tsinghua Univ, Dept Elect Engn, Tsinghua Natl Lab Informat Sci & Technol, Key Lab Integrated Optoelect, Beijing 100084, Peoples R China.

Reprint Address: Zheng, HY (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: zhy168@semi.ac.cn

ISSN: 2162-8769
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Record 453 of 495

Title: Synthesis, properties, and top-gated metal-oxide-semiconductor field-effect transistors of p-type GaSb nanowires

Author(s): Xu, GW (Xu, Guangwei); Huang, SY (Huang, Shaoyun); Wang, XY (Wang, Xiaoye); Yu, B (Yu, Bin); Zhang, H (Zhang, Hui); Yang, T (Yang, Tao); Xu, HQ (Xu, H. Q.); Dai, L (Dai, Lun)

Source: RSC ADVANCES Volume: 3 Issue: 43 Pages: 19834-19839 DOI: 10.1039/c3ra43127d Published: 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: High-quality GaSb nanowires (NWs) have been synthesized via chemical vapor deposition. The as-synthesized NWs have a zinc-blende structure with growth direction along a < 011 > direction. Raman spectrum of the GaSb NWs consists of two peaks, corresponding to the LO and TO phonon modes, respectively. The temperature dependence of the photoluminescence spectra shows a blue-shift as the temperature decreases from 300 to 13 K. The electrical properties of the GaSb NWs are investigated over a wide range of temperatures from 25 mK to 291 K. The results show that the GaSb NWs exhibit excellent p-type transistor performance at low temperatures (<40 K). The room-temperature hole density and mobility were found to be similar to 2.2 x 10(18) cm(-3) and similar to 14.2 cm(2) V-1 s(-1), respectively. The Schottky contact characteristics were observed and the barrier height was found to be similar to 14 meV. Our results show that the GaSb NWs could be used as building blocks for emerging p-type nanoelectronic devices in extremely low temperature environments.

Addresses: [Xu, Guangwei; Yu, Bin; Zhang, Hui; Dai, Lun] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China.

[Xu, Guangwei; Yu, Bin; Zhang, Hui; Dai, Lun] Peking Univ, Sch Phys, Beijing 100871, Peoples R China.

[Huang, Shaoyun; Yang, Tao] Peking Univ, Dept Elect, Beijing 100871, Peoples R China.

[Huang, Shaoyun; Xu, H. Q.] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China.

[Wang, Xiaoye; Yang, Tao] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China.

[Xu, H. Q.] Lund Univ, Div Solid State Phys, S-22100 Lund, Sweden.

Reprint Address: Xu, HQ (reprint author), Peking Univ, Dept Elect, Beijing 100871, Peoples R China.

E-mail Addresses: Hongqi.Xu@.f.lth.se; lundai@pku.edu.cn

ISSN: 2046-2069
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Record 454 of 495

Title: Single-crystalline metal germanate nanowire-carbon textiles as binder-free, self-supported anodes for high-performance lithium storage

Author(s): Li, WW (Li, Wenwu); Wang, XF (Wang, Xianfu); Liu, B (Liu, Bin); Xu, J (Xu, Jing); Liang, B (Liang, Bo); Luo, T (Luo, Tao); Luo, SJ (Luo, Sijun); Chen, D (Chen, Di); Shen, GZ (Shen, Guozhen)

Source: NANOSCALE Volume: 5 Issue: 21 Pages: 10291-10299 DOI: 10.1039/c3nr03530a Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Single-crystalline metal germanate nanowires, including SrGe4O9, BaGe4O9, and Zn2GeO4 were successfully grown on carbon textile via a simple low-cost hydrothermal method on a large scale. The as-grown germanate nanowires-carbon textiles were directly used as binder-free anodes for lithium-ion batteries, which exhibited highly reversible capacity in the range of 900-1000 mA h g(-1) at 400 mA g(-1), good cyclability (no obvious capacity decay even after 100 cycles), and excellent rate capability with a capacity of as high as 300 mA h g(-1) even at 5 A g(-1). Such excellent electrochemical performance can be ascribed to the three-dimensional interconnected conductive channels composed of the flexible carbon microfibers, which not only serve as the current collector but also buffer the volume change of the active material upon cycling. Additionally, the one-dimensional nanostructures grown directly on the carbon microfibers also ensure fast charge carrier (e(-) and Li+) transport, large surface areas, better permeabilities, and more active sites, which also contributed to the improved electrochemical performance.

Addresses: [Li, Wenwu; Wang, Xianfu; Liu, Bin; Xu, Jing; Liang, Bo; Luo, Tao; Luo, Sijun; Chen, Di] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China.

[Li, Wenwu; Liang, Bo; Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Chen, D (reprint author), Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China.

E-mail Addresses: dichen@mail.hust.edu.cn; gzshen@semi.ac.cn

ISSN: 2040-3364
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Record 455 of 495

Title: Low-cost multiple-walled carbon nanotubes absorber for passively Q-switched and mode-locked Nd:YVO4 laser

Author(s): Wang, YG (Wang, Yong Gang); Zhang, L (Zhang, Ling); Lin, XC (Lin, Xue Chun)

Source: OPTIK Volume: 124 Issue: 20 Pages: 4465-4467 DOI: 10.1016/j.ijleo.2013.03.014 Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A low-cost multiple-walled carbon nanotubes/polyvinyl alcohol (MWCNTs/PVA) absorber was fabricated by the characteristics of high viscosity in large molecule PVA aqueous solution and vertical evaporation technique. Sandwich structured MWCNT/PVA absorber was constructed by a piece of MWCNT absorber, a piece of round quartz and a piece of reflective mirror. We exploited it to realize Q-switched mode locking operation in a diode-pumped Nd:YVO4 laser. The maximum average output power is about 630 mW. (C) 2013 Elsevier GmbH. All rights reserved.

Addresses: [Wang, Yong Gang] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China.

[Zhang, Ling; Lin, Xue Chun] Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing, Peoples R China.

Reprint Address: Wang, YG (reprint author), Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China.

E-mail Addresses: chinawygxjw@hotmail.com

ISSN: 0030-4026
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Record 456 of 495

Title: Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2

Author(s): Zhao, WJ (Zhao, Weijie); Ghorannevis, Z (Ghorannevis, Zohreh); Amara, KK (Amara, Kiran Kumar); Pang, JR (Pang, Jing Ren); Toh, M (Toh, Minglin); Zhang, X (Zhang, Xin); Kloc, C (Kloc, Christian); Tan, PH (Tan, Ping Heng); Eda, G (Eda, Goki)

Source: NANOSCALE Volume: 5 Issue: 20 Pages: 9677-9683 DOI: 10.1039/c3nr03052k Published: 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Thickness is one of the fundamental parameters that define the electronic, optical, and thermal properties of two-dimensional (2D) crystals. Phonons in molybdenum disulfide (MoS2) were recently found to exhibit unique thickness dependence due to the interplay between short and long range interactions. Here we report Raman spectra of atomically thin sheets of WS2 and WSe2, isoelectronic compounds of MoS2, in the mono-to few-layer thickness regime. We show that, similar to the case of MoS2, the characteristic A(1g) and E-2g(1) modes exhibit stiffening and softening with increasing number of layers, respectively, with a small shift of less than 3 cm(-1) due to large mass of the atoms. Thickness dependence is also observed in a series of multiphonon bands arising from overtone, combination, and zone edge phonons, whose intensity exhibit significant enhancement in excitonic resonance conditions. Some of these multiphonon peaks are found to be absent only in monolayers. These features provide a unique fingerprint and rapid identification for monolayer flakes.

Addresses: [Zhao, Weijie; Ghorannevis, Zohreh; Eda, Goki] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore.

[Amara, Kiran Kumar; Pang, Jing Ren; Eda, Goki] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore.

[Zhao, Weijie; Ghorannevis, Zohreh; Eda, Goki] Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore.

[Toh, Minglin; Kloc, Christian] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore.

[Zhang, Xin; Tan, Ping Heng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Eda, G (reprint author), Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore.

E-mail Addresses: g.eda@nus.edu.sg

ISSN: 2040-3364


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Record 457 of 495

Title: GaN-Based Light Emitting Diodes with Hybrid Micro-Nano Patterned Sapphire Substrate

Author(s): Cheng, Y (Cheng, Yan); Wang, LC (Wang, Liancheng); Zhang, YY (Zhang, Yiyun); Zheng, HY (Zheng, Haiyang); Ma, J (Ma, Jun); Yi, XY (Yi, Xiaoyan); Wang, GH (Wang, Guohong); Li, JM (Li, Jinmin)

Source: ECS SOLID STATE LETTERS Volume: 2 Issue: 11 Pages: Q93-Q97 DOI: 10.1149/2.007311ssl Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: GaN-based light emitting diodes (LEDs) have been fabricated with hybrid micro-nano patterned sapphire substrate (MNPSS). Random nano pattern distributed on the spacing and inclined surface of the micro pattern was realized utilizing standard photolithography, nickel etching mask and inductively coupled plasma (ICP) etching techniques. Both surface morphology and X-ray diffraction (XRD) results showed that MNPSS and conventional MPSS had similar effect on the crystalline quality of the epilayers. Furthermore, light output powers (LOP) of LEDs with MNPSS was increased considerably compared with conventional planar sapphire substrate (CPSS) and was even higher than that of LEDs employing micro patterned sapphire substrate (MPSS), indicating more superior performance of GaN-based LEDs was obtained by employing the hybrid micro-nano pattern. (C) 2013 The Electrochemical Society. All rights reserved.

Addresses: [Cheng, Yan; Wang, Liancheng; Zhang, Yiyun; Zheng, Haiyang; Ma, Jun; Yi, Xiaoyan; Wang, Guohong; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting, Beijing 100083, Peoples R China.

Reprint Address: Cheng, Y (reprint author), Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting, Beijing 100083, Peoples R China.

E-mail Addresses: chengyan@semi.ac.cn

ISSN: 2162-8742


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Record 458 of 495

Title: SnO2-microtube-assembled cloth for fully flexible self-powered photodetector nanosystems

Author(s): Hou, XJ (Hou, Xiaojuan); Liu, B (Liu, Bin); Wang, XF (Wang, Xianfu); Wang, ZR (Wang, Zhuoran); Wang, QF (Wang, Qiufan); Chen, D (Chen, Di); Shen, GZ (Shen, Guozhen)

Source: NANOSCALE Volume: 5 Issue: 17 Pages: 7831-7837 DOI: 10.1039/c3nr02300a Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Integrating an energy conversion or storage device with photodetectors into a self-powered system provides a promising route to future devices aimed at reduced size, low weight and high flexibility. We reported here the fabrication of a fully flexible self-powered photodetector nanosystem by integrating a flexible SnO2-cloth-based ultraviolet photodetector with a flexible SnO2-cloth-based lithium-ion battery. The flexible SnO2-cloth-based ultraviolet photodetectors showed fast response to ultraviolet light with excellent flexibility and stability. Using SnO2-on-carbon-cloth as the binder-free anode and commercial LiCoO2/Al foil as the cathode, a flexible full lithium-ion battery was assembled, exhibiting a reversible capacity of 550 mA h g(-1) even after 60 cycles at a current density of 200 mA g(-1) in a potential window of 2-3.8 V. When integrated with and driven by the flexible full battery, the fully flexible self-powered photodetector nanosystem exhibits comparable performance with an analogous externally powered device. Such an integrated nanosystem could serve as a wireless detecting system in large areas, as required in applications such as environmental sensing and biosensing.

Addresses: [Hou, Xiaojuan; Liu, Bin; Wang, Xianfu; Wang, Zhuoran; Wang, Qiufan; Chen, Di] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China.

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