Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Addresses: [Yu, Jinling; Cheng, Shuying; Lai, Yunfeng] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian Province, Peoples R China.

[Yu, Jinling; Cheng, Shuying; Lai, Yunfeng] Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Fuzhou 350108, Fujian Province, Peoples R China.

[Chen, Yonghai] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Yu, JL (reprint author), Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Fujian Province, Peoples R China.

E-mail Addresses: jlyu@semi.ac.cn; yhchen@semi.ac.cn

ISSN: 1386-9477

Record 373 of 495

Title: Splitting of electromagnetically induced transparency window and appearing of gain due to radio frequency field

Author(s): Li, XL (Li Xiao-Li); Shang, YX (Shang Ya-Xuan); Sun, J (Sun Jiang)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 6 Article Number: 064202 DOI: 10.7498/aps.62.064202 Published: MAR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Two resonant radio frequency fields are added to lambda three-level system in this paper. By discussing the behaviors of probing field absorption profiles under the effect of different Rabi frequencies of two radio frequency fields, the splitting of electromagnetically induced transparency (EIT) can be seen and the overlapping between EIT and gain can be obtained. The results show that the two radio frequency fields have different control functions on the system. The radio frequency field which interacts with hyperfine levels of ground state plays a role in the splitting of EIT, but the radio frequency field which interacts with hyperfine levels of excited state does not work on it. In addition only when the Rabi frequency of radio frequency field interacting with hyperfine levels of ground state is greater than with hyperfine levels of excited state, can the new features about the overlapping between EIT and gain be obtained.

Addresses: [Li Xiao-Li; Shang Ya-Xuan; Sun Jiang] Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China.

[Li Xiao-Li] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Li, XL (reprint author), Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China.

E-mail Addresses: xiaolixiaoli001@yahoo.com.cn

ISSN: 1000-3290
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Record 374 of 495

Title: High efficiency and high power continuous-wave semiconductor terahertz lasers at similar to 3.1 THz

Author(s): Liu, JQ (Liu, Junqi); Chen, JY (Chen, Jianyan); Wang, T (Wang, Tao); Li, YF (Li, Yanfang); Liu, FQ (Liu, Fengqi); Li, L (Li, Lu); Wang, LJ (Wang, Lijun); Wang, ZG (Wang, Zhanguo)

Source: SOLID-STATE ELECTRONICS Volume: 81 Pages: 68-71 DOI: 10.1016/j.sse.2013.01.014 Published: MAR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Continuous-wave operation of semiconductor terahertz quantum cascade lasers at similar to 3.1 THz based on a bound-to-continuum transition design is described. The material physics and device performance is analyzed in detail. With good injection efficiency in the upper single isolated radiative state and efficient extraction from the lower radiative state, the maximum operating temperature is in excess of 90 K in pulsed and 70 K in continuous-wave mode. The peak power of 112.5 mW was obtained at 10 K in pulsed mode, indicating similar to 36 photons per injected electron for 120 periods of active region. In continuous-wave operation, collected power of 62 mW and 22 photons per electron was also achieved at 10 K. (C) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Liu, Junqi; Chen, Jianyan; Wang, Tao; Li, Yanfang; Liu, Fengqi; Li, Lu; Wang, Lijun; Wang, Zhanguo] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Liu, Junqi; Chen, Jianyan; Wang, Tao; Li, Yanfang; Liu, Fengqi; Wang, Lijun; Wang, Zhanguo] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

[Li, Yanfang] Inst Appl Phys & Computat Math, Beijing 100088, Peoples R China.

Reprint Address: Liu, JQ (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: jqliu@semi.ac.cn; fqliu@red.semi.ac.cn

ISSN: 0038-1101

Record 375 of 495

Title: EIT and MOLLOW Spectrum in N-Type Four-Level System

Author(s): Li, XL (Li Xiao-li); Meng, XD (Meng Xu-dong); Yang, ZC (Yang Zi-cai); Sun, J (Sun Jiang)

Source: SPECTROSCOPY AND SPECTRAL ANALYSIS Volume: 33 Issue: 3 Pages: 590-594 DOI: 10.3964/j.issn.1000-0593(2013)03-0590-05 Published: MAR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: An N-type four level system where two coupling fields interact with two separate optical transitions was constructed in the present paper. By discussing the behaviors of probing field absorption profiles under the effect of different Rabi frequencies of two coupling fields, EIT, Mollow and Autler-Townes doublet can be seen and mutual transformation between them can be obtained. Multiple transition channels in the system were found and the results show that the system can be divided into several subsystems according to the transition channels. Quantum interference between different transition channels can be realized through different dividing methods, so three nonlinear effects with different generating conditions and physical nature can be seen in the system.

Addresses: [Li Xiao-li; Yang Zi-cai; Sun Jiang] Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China.

[Li Xiao-li] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Meng Xu-dong] Hebei North Univ, Dept Phys, Zhangjiakou 075000, Peoples R China.

Reprint Address: Li, XL (reprint author), Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China.

E-mail Addresses: xiaolixiaoli001@yahoo.com.cn

ISSN: 1000-0593

Record 376 of 495

Title: Raman Spectra Analysis of GaN : Er Films Prepared by Ion Implantation

Author(s): Tao, DY (Tao Dong-yan); Liu, C (Liu Chao); Yin, CH (Yin Chun-hai); Zeng, YP (Zeng Yi-ping)

Source: SPECTROSCOPY AND SPECTRAL ANALYSIS Volume: 33 Issue: 3 Pages: 699-703 DOI: 10.3964/j.issn.1000-0593(2013)03-0699-05 Published: MAR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: U-, n- and p-GaN Er films were prepared by ion implantation method. Three carrier types of samples were studied by Raman spectra analysis. After Er+ ion implantation into GaN samples, new Raman peaks at wavenumber of 293, 362 (sic) 670 cm(-1) appeared, where 293 cm(-1) was considered as disordered activation of Raman scattering (DARS), 362 and 670 cm(-1) may be associated with GaN lattice defects formed after ion implantation. The E-2 (high) characteristic peak moves to the high frequency before and after GaN Er samples annealing at 800 degrees C, indicating that GaN lattice is under the compressive stress. The Lorenz fitting was used to analysed the occurrences of A(1) (LO) peak in different samples which is composed of the uncoupled mode LO and the plasmon coupling mode LPP+, qualitatively pointing out the carrier concentration variation of a series of GaN : Er samples.

Addresses: [Tao Dong-yan; Liu Chao; Yin Chun-hai; Zeng Yi-ping] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Liu, C (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: dongyantao@semi.ac.cn; cliu@semi.ac.cn

ISSN: 1000-0593

Record 377 of 495

Title: Multiwall Nanotubes, Multilayers, and Hybrid Nanostructures: New Frontiers for Technology and Raman Spectroscopy

Author(s): Bonaccorso, F (Bonaccorso, Francesco); Tan, PH (Tan, Ping-Heng); Ferrari, AC (Ferrari, Andrea C.)

Source: ACS NANO Volume: 7 Issue: 3 Pages: 1838-1844 DOI: 10.1021/nn400758r Published: MAR 2013

Times Cited in Web of Science: 3

Total Times Cited: 3

Abstract: Technological progress is determined, to a great extent, by developments in material science. Breakthroughs can happen when a new type of material or new combinations of known materials with different dimensionality and functionality are created. Multi layered structures, being planar or concentric, are now emerging as major players at the forefront of research. Raman spectroscopy Is a well-established characterization technique for carbon nanomaterials and is being developed for layered materials. In this Issue of ACS Nano, Hirschmann et al. investigate triple-wall carbon nanotubes via resonant Raman spectroscopy, showing how a wealth of Information can be derived about these complex structures. The next challenge Is to tackle hybrid heterostructures, consisting of different planar or concentric materials, arranged "on demand" to achieve targeted properties.

Addresses: [Bonaccorso, Francesco; Ferrari, Andrea C.] Univ Cambridge, Cambridge Graphene Ctr, Cambridge CB3 0FA, England.

[Tan, Ping-Heng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Ferrari, AC (reprint author), Univ Cambridge, Cambridge Graphene Ctr, 9 JJ Thomson Ave, Cambridge CB3 0FA, England.

E-mail Addresses: acf26@eng.cam.ac.uk

ISSN: 1936-0851
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Record 378 of 495

Title: High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy

Author(s): Su, SJ (Su Shao-Jian); Zhang, DL (Zhang Dong-Liang); Zhang, GZ (Zhang Guang-Ze); Xue, CL (Xue Chun-Lai); Cheng, BW (Cheng Bu-Wen); Wang, QM (Wang Qi-Ming)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 5 Article Number: 058101 DOI: 10.7498/aps.62.058101 Published: MAR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: As a new group-IV semiconductor alloy, Ge1-xSnx is a very promising material for applications in photonic and microelectronic devices. In this work, high-quality germanium-tin (Ge1-xSnx) alloys are grown on Ge(001) substrates by molecular beam epitaxy, with x = 1.5%, 2.4%, 2.8%, 5.3%, and 14%. The Ge1-xSnx alloys are characterized by high resolution X-ray diffraction (HR-XRD), Rutherford backscattering spectra (RBS), and transmission electron micrograph (TEM). For the samples with Sn composition x <= 5.3%, the Ge1-xSnx alloys each exhibit a very high crystalline quality. The ratio of channel yield to random yield (chi(min)) in the RBS spectrum is only about 5%, and the full width at half maximum (FWHM) of the Ge1-xSnx peak in HR-XRD curve is 100 ''. For the sample with x = 14%, the crystalline quality of the alloy is degraded and FWHM is 264.6 ''.

Addresses: [Su Shao-Jian] Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021, Peoples R China.

[Zhang Dong-Liang; Zhang Guang-Ze; Xue Chun-Lai; Cheng Bu-Wen; Wang Qi-Ming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Cheng, BW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: cbw@semi.ac.cn

ISSN: 1000-3290
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Record 379 of 495

Title: Topology identification of uncertain nonlinearly coupled complex networks with delays based on anticipatory synchronization

Author(s): Che, YQ (Che, Yanqiu); Li, RX (Li, Ruixue); Han, CX (Han, Chunxiao); Cui, SG (Cui, Shigang); Wang, J (Wang, Jiang); Wei, XL (Wei, Xile); Deng, B (Deng, Bin)

Source: CHAOS Volume: 23 Issue: 1 Article Number: 013127 DOI: 10.1063/1.4793541 Published: MAR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: This paper presents an adaptive anticipatory synchronization based method for simultaneous identification of topology and parameters of uncertain nonlinearly coupled complex dynamical networks with time delays. An adaptive controller is proposed, based on Lyapunov stability theorem and Barbalat's Lemma, to guarantee the stability of the anticipatory synchronization manifold between drive and response networks. Meanwhile, not only the identification criteria of network topology and system parameters are obtained but also the anticipatory time is identified. Numerical simulation results illustrate the effectiveness of the proposed method. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793541]

Addresses: [Che, Yanqiu; Li, Ruixue; Han, Chunxiao; Cui, Shigang] Tianjin Univ Technol & Educ, Tianjin Key Lab Informat Sensing & Intelligent Co, Tianjin 300222, Peoples R China.

[Che, Yanqiu] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang, Jiang; Wei, Xile; Deng, Bin] Tianjin Univ, Sch Elect Engn & Automat, Tianjin 300072, Peoples R China.

Reprint Address: Che, YQ (reprint author), Tianjin Univ Technol & Educ, Tianjin Key Lab Informat Sensing & Intelligent Co, Tianjin 300222, Peoples R China.

E-mail Addresses: yqche@tju.edu.cn

ISSN: 1054-1500

Record 380 of 495

Title: High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical Interconnection

Author(s): Li, C (Li, Chong); Xue, CL (Xue, Chunlai); Liu, Z (Liu, Zhi); Cheng, BW (Cheng, Buwen); Li, CB (Li, Chuanbo); Wang, QM (Wang, Qiming)

Source: IEEE TRANSACTIONS ON ELECTRON DEVICES Volume: 60 Issue: 3 Pages: 1183-1187 DOI: 10.1109/TED.2013.2241066 Published: MAR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this paper, we report efficient high-speed top-illuminated p-i-n photodiodes with high responsivity fabricated from germanium (Ge) films grown directly on silicon-on-insulator substrates. The devices were characterized with respect to their dark current, responsivity, and 3-dB bandwidth (BW) in the near infrared. For a 20-mu m-diameter device at room temperature, the dark current densities were approximately 38.3 mA/cm(2) at -1 V. The responsivity (R) at 1.55 mu m was 0.30 A/W, corresponding to a quantum efficiency of 24%. The 3-dB BW of the detector with 20-mu m diameter is as high as 23.3 GHz.

Addresses: [Li, Chong; Xue, Chunlai; Liu, Zhi; Cheng, Buwen; Li, Chuanbo; Wang, Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Li, C (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: chli@semi.ac.cn; clxue@semi.ac.cn; zhiliu@semi.ac.cn; cbw@semi.ac.cn; cbli@semi.ac.cn; qmwang@semi.ac.cn

ISSN: 0018-9383

Record 381 of 495

Title: High Response in aTellurium-Supersaturated Silicon Photodiode

Author(s): Wang, XY (Wang Xi-Yuan); Huang, YG (Huang Yong-Guang); Liu, DW (Liu De-Wei); Zhu, XN (Zhu Xiao-Ning); Zhu, HL (Zhu Hong-Liang)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 3 Article Number: 036101 DOI: 10.1088/0256-307X/30/3/036101 Published: MAR 2013

Times Cited in Web of Science: 0

Total Times Cited: 1

Abstract: Single crystalline silicon supersaturated with tellurium are formed by ion implantation followed by excimer nanosecond pulsed laser melting (PLM). The lattice damaged by ion implantation is restored during the PLM process, and dopants are effectively activated. The hyperdoped layer exhibits high and broad optical absorption from 400 to 2500 nm. The n(+)p photodiodes fabricated from these materials show high response (6.9A/W at 1000 nm) with reverse bias 12V at room temperature. The corresponding cut-off wavelength is 1258 nm. The amount of gain and extended cut-off wavelength both increase with increasing reverse bias voltage; above 100% external quantum efficiency is observed even at a reverse bias of 1 V. The cut-off wavelength with 0V bias is shorter than the commercial silicon detector. This implies that the Burstein-Moss shift is due to hyperdoping. The amount of the extended cut-off wavelength increases with increasing reverse bias voltage, suggesting existence of the Franz-Keldysh effect.

Addresses: [Wang Xi-Yuan; Huang Yong-Guang; Liu De-Wei; Zhu Xiao-Ning; Zhu Hong-Liang] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Liu De-Wei] Zhengzhou Univ Light Ind, Dept Technol & Phys, Zhengzhou 450002, Peoples R China.

Reprint Address: Huang, YG (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yghuang@red.semi.ac.cn

ISSN: 0256-307X
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Record 382 of 495

Title: The Generation of a Compact Azimuthally Polarized Vertical-Cavity Surface Emitting Laser Beam with Radial Slits

Author(s): Xu, BZ (Xu Bin-Zong); Liu, JT (Liu Jie-Tao); Cai, LK (Cai Li-Kang); Hu, HF (Hu Hai-Feng); Wang, Q (Wang Qing); Wei, X (Wei Xin); Song, GF (Song Guo-Feng)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 3 Article Number: 034206 DOI: 10.1088/0256-307X/30/3/034206 Published: MAR 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: We propose the simple and efficient generation of a compact azimuthally polarized laser beam. Radial slits with annular distribution are patterned onto the output facet of a standard vertical-cavity surface emitting laser. Due to the polarization modulation of the surface plasmon polariton mode excited by the radial slits, a compact azimuthally polarized laser beam at 850 nm is experimentally demonstrated. The finite-difference time-domain method is introduced to analyze the polarization characteristics of the transmitted light through the radial slit, which agrees well with our experimental results.

Addresses: [Xu Bin-Zong; Liu Jie-Tao; Cai Li-Kang; Hu Hai-Feng; Wang Qing; Wei Xin; Song Guo-Feng] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Song, GF (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: sgf@red.semi.ac.cn

ISSN: 0256-307X

Record 383 of 495

Title: Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation

Author(s): Gong, X (Gong, Xiao); Han, GQ (Han, Genquan); Bai, F (Bai, Fan); Su, SJ (Su, Shaojian); Guo, PF (Guo, Pengfei); Yang, Y (Yang, Yue); Cheng, R (Cheng, Ran); Zhang, DL (Zhang, Dongliang); Zhang, GZ (Zhang, Guangze); Xue, CL (Xue, Chunlai); Cheng, BW (Cheng, Buwen); Pan, JS (Pan, Jisheng); Zhang, Z (Zhang, Zheng); Tok, ES (Tok, Eng Soon); Antoniadis, D (Antoniadis, Dimitri); Yeo, YC (Yeo, Yee-Chia)

Source: IEEE ELECTRON DEVICE LETTERS Volume: 34 Issue: 3 Pages: 339-341 DOI: 10.1109/LED.2012.2236880 Published: MAR 2013

Times Cited in Web of Science: 5

Total Times Cited: 5

Abstract: In this letter, we report the first study of the dependence of carrier mobility anddrive current I-Dsat of Ge0.958Sn0.042 p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) on surface orientations. Compressively strained Ge0.958Sn0.042 channels were grown on (100) and (111) Ge substrates. Sub-400 degrees C Si2H6 treatment was introduced for the passivation of the GeSn surface prior to gate stack formation. Source/drain series resistance and subthreshold swing S were found to be independent of surface orientation. The smallest reported S of 130 mV/decade for GeSn pMOSFETs is achieved. The (111)oriented device demonstrates 13% higher IDsat over the (100)oriented one at a V-GS-V-TH of -0.6 V and V-DS of -0.9 V. We also found that GeSn pMOSFETs with (111) surface orientation show 18% higher hole mobility than GeSn pMOSFETs with (100) orientation.

Addresses: [Gong, Xiao; Han, Genquan; Bai, Fan; Guo, Pengfei; Yang, Yue; Cheng, Ran; Yeo, Yee-Chia] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore.

[Su, Shaojian] Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021, Peoples R China.

[Zhang, Dongliang; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Pan, Jisheng] Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 117602, Singapore.

[Pan, Jisheng; Tok, Eng Soon] Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore.

[Zhang, Zheng] Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 117602, Singapore.

[Antoniadis, Dimitri] MIT, Microsyst Technol Lab, Cambridge, MA 02139 USA.

Reprint Address: Gong, X (reprint author), Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore.

E-mail Addresses: hangenquan@ieee.org; yeo@ieee.org

ISSN: 0741-3106

Record 384 of 495

Title: Ultraviolet Detector Based on SrZr0.1Ti0.9O3 Film

Author(s): Zhang, M (Zhang, Min); Chen, Y (Chen, Yu); Zhang, HF (Zhang, Haifeng); Chen, WY (Chen, Weiyou); Lv, KB (Lv, Kaibo); Ruan, SP (Ruan, Shengping)

Source: IEEE ELECTRON DEVICE LETTERS Volume: 34 Issue: 3 Pages: 420-422 DOI: 10.1109/LED.2012.2236072 Published: MAR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this letter, a nanocrystalline SrZr0.1Ti0.9O3 thin film was synthesized by sol-gel method and characterized by means of X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and UV-visible absorption spectra. Interdigitated Au electrodes were deposited on the film to fabricate metal-semiconductor-metal ultraviolet photodetector. At 5-V bias, the dark current of the device was 41 pA. Under the irradiation of 260-nm UV light, peak responsivity of 94 mA/W was achieved, which was higher than that of pure SrTiO3-based photodetectors. The higher responsivity of the SrZr0.1Ti0.9O3 device may be due to the introduction of zirconia, which would induce more oxygen vacancies. The UV/visible rejection ratio R-260 nm/R-380 nm was more than three orders of magnitude, indicating excellent sensitivity. The rise time and fall time of the device were 3.8 and 565 ms, respectively.

Addresses: [Zhang, Min; Chen, Yu; Zhang, Haifeng; Chen, Weiyou; Lv, Kaibo; Ruan, Shengping] Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China.

[Zhang, Min; Chen, Yu; Zhang, Haifeng; Chen, Weiyou; Lv, Kaibo; Ruan, Shengping] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhang, M (reprint author), Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China.

E-mail Addresses: chenyu@semi.ac.cn; rsp1226@gmail.com