Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

[Zheng, Haiyang] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

[Zhang, Yiyun] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China.

[Rao, Liqiang] China Ship Res Acad, Huanding Energy Servicesenterprise, Beijing 102200, Peoples R China.

Reprint Address: Wang, LC (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: wanglc@semi.ac.cn

ISSN: 2046-2069
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Record 471 of 495

Title: Thermoelectric devices based on one-dimensional nanostructures

Author(s): Qi, YY (Qi, Yangyang); Wang, Z (Wang, Zhen); Zhang, ML (Zhang, Mingliang); Yang, FH (Yang, Fuhua); Wang, XD (Wang, Xiaodong)

Source: JOURNAL OF MATERIALS CHEMISTRY A Volume: 1 Issue: 20 Pages: 6110-6124 DOI: 10.1039/c3ta01594g Published: 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Compared with the bulk, one-dimensional (1D) nanostructural materials exhibit enhanced thermoelectric performance. The figures of merit for most bulk materials used in practical devices are close to 1. However, the values for 1D nanostructural materials have reached 2.5 from experiments and could exceed 10 from theoretical simulations. This review discusses popular thermoelectric materials and devices based on 1D nanostructures, including preparation of nanostructures and fabrication of thermoelectric devices. Measurement approaches and the related devices for testing the thermal conductivity of 1D nanostructures were presented. Three potentially hot topics associated with thermoelectric properties of 1D nanostructures were discussed.

Addresses: [Qi, Yangyang; Wang, Zhen; Zhang, Mingliang; Yang, Fuhua; Wang, Xiaodong] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

Reprint Address: Qi, YY (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

E-mail Addresses: zhangml@semi.ac.cn; xdwang@semi.ac.cn

ISSN: 2050-7488

Record 472 of 495

Title: Synthesis of WO3 nanostructures and their ultraviolet photoresponse properties

Author(s): Huo, NJ (Huo, Nengjie); Yang, SX (Yang, Shengxue); Wei, ZM (Wei, Zhongming); Li, JB (Li, Jingbo)

Source: JOURNAL OF MATERIALS CHEMISTRY C Volume: 1 Issue: 25 Pages: 3999-4007 DOI: 10.1039/c3tc30527a Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Tungsten oxide (WO3) nanostructures such as nanowires, nanorod bundles and nanotube bundles are synthesized by a facile hydrothermal method. The ultraviolet (UV) photoresponse characteristics of devices containing these WO3 nanostructures are investigated for the first time and new photosensitive mechanisms involving both photo-generated electron-hole pairs and reversible electrochemical reactions are proposed. We find that h-WO3 nanowires with large specific surface areas and fewer defects exhibit excellent UV photoresponse properties with switch ratios (defined as I-photo/I-dark) as high as 60, which is due to the existing large tunnels serving as channels and intercalation sites for mobile ions and active electrochemical reactions, and our findings provide a new family and more selectivity for UV photosensitive nanomaterials in the future.

Addresses: [Huo, Nengjie; Yang, Shengxue; Wei, Zhongming; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Huo, NJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: shengxueyang@semi.ac.cn; jbli@semi.ac.cn

ISSN: 2050-7526

Record 473 of 495

Title: High-performance energy-storage devices based on WO3 nanowire arrays/carbon cloth integrated electrodes

Author(s): Gao, LN (Gao, Lina); Wang, XF (Wang, Xianfu); Xie, Z (Xie, Zhong); Song, WF (Song, Weifeng); Wang, LJ (Wang, Lijing); Wu, X (Wu, Xiang); Qu, FY (Qu, Fengyu); Chen, D (Chen, Di); Shen, GZ (Shen, Guozhen)

Source: JOURNAL OF MATERIALS CHEMISTRY A Volume: 1 Issue: 24 Pages: 7167-7173 DOI: 10.1039/c3ta10831g Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Ordered WO3 nanowire arrays on carbon cloth (WNCC) conductive substrates are successfully prepared by a facile hydrothermal method. The as-prepared samples were characterized by XRD, SEM and TEM and directly functionalized as supercapacitor (SC) and lithium-ion battery (LIB) electrodes without using any ancillary materials such as carbon black or binder. The unique structural features endow them with excellent electrochemical performance. The SCs demonstrate high specific capacitance of 521 F g(-1) at 1 A g(-1) and 5.21 F cm(-2) at 10 A cm(-2) and excellent cyclic performance with nearly 100% capacity retention after 2000 cycles at a current density of 3 A g(-1). All-solid-state SCs based on the integrated electrodes are also presented, exhibiting high flexibility without obvious performance declination at different bending states. A high capacity of 662 mA h g(-1) after 140 cycles at a 0.28 C rate and excellent rate capabilities are also obtained for LIBs due to the unique structures of the integrated electrodes.

Addresses: [Gao, Lina; Wang, Xianfu; Xie, Zhong; Song, Weifeng; Chen, Di; Shen, Guozhen] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China.

[Gao, Lina; Wang, Lijing; Wu, Xiang; Qu, Fengyu] Harbin Normal Univ, Coll Chem & Chem Engn, Harbin 150025, Peoples R China.

[Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Gao, LN (reprint author), Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China.

E-mail Addresses: wuxiang05@gmail.com; qufengyu@hrbnu.edu.cn; gzshen@semi.ac.cn

ISSN: 2050-7488

Record 474 of 495

Title: High performance thin film transistors based on regioregular poly(3-dodecylthiophene)-sorted large diameter semiconducting single-walled carbon nanotubes

Author(s): Wang, C (Wang, Chao); Qian, L (Qian, Long); Xu, WY (Xu, Wenya); Nie, SH (Nie, Shuhong); Gu, WB (Gu, Weibing); Zhang, JH (Zhang, Jianhui); Zhao, JW (Zhao, Jianwen); Lin, J (Lin, Jian); Chen, Z (Chen, Zheng); Cui, Z (Cui, Zheng)

Source: NANOSCALE Volume: 5 Issue: 10 Pages: 4156-4161 DOI: 10.1039/c3nr34304a Published: 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: In this work, a simple and rapid method to selectively sort semiconducting-SWCNTs (sc-SWCNTs) with large diameters using regioregular poly(3-dodecylthiophene) (rr-P3DDT) is presented. The absorption spectra and Raman spectra demonstrated that metallic species of arc discharge SWCNTs were effectively removed after interaction with rr-P3DDT in toluene with the aid of sonication and centrifugation. The sorted sc-SWCNT inks have been directly used to fabricate thin film transistors (TFTs) by dip-coating, drop-casting and inkjet printing. TFTs with an effective mobility of similar to 34 cm(2) V-1 s(-1) and on-off ratios of similar to 10(7) have been achieved by dip coating and drop casting the ink on SiO2/Si substrates with pre-patterned interdigitated gold electrode arrays. The printed devices also showed excellent electrical properties with a mobility of up to 6.6 cm(2) V-1 s(-1) and on-off ratios of up to 10(5). Printed inverters based on the TFTs have been constructed on glass substrates, showing a maximum voltage gain of 112 at a V-dd of -5 V. This work paves the way for making printable logic circuits for real applications.

Addresses: [Wang, Chao; Qian, Long; Xu, Wenya; Nie, Shuhong; Gu, Weibing; Zhang, Jianhui; Zhao, Jianwen; Lin, Jian; Chen, Zheng; Cui, Zheng] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Printable Elect Res Ctr, SEID, Suzhou 215123, Jiangsu, Peoples R China.

[Wang, Chao] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang, Chao] Univ Chinese Acad Sci, Beijing 100049, Peoples R China.

Reprint Address: Zhao, JW (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Printable Elect Res Ctr, SEID, 398 Ruoshui Rd,Suzhou Ind Pk, Suzhou 215123, Jiangsu, Peoples R China.

E-mail Addresses: jwzhao2011@sinano.ac.cn; zcui2009@sinano.ac.cn

ISSN: 2040-3364

Record 475 of 495

Title: Laser beam shaping with an ellipsoidal lens

Author(s): Luo, DX (Luo, Daxin); Zhao, BQ (Zhao, Baiqin); Chen, XL (Chen, Xuelei)

Source: OPTIK Volume: 124 Issue: 7 Pages: 565-569 DOI: 10.1016/j.ijleo.2011.12.023 Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: This paper presents a semiconductor laser beam shaping system that can collimate the irradiance profile effectively by using an ellipsoidal lens. Geometrical optics analysis based on the ray tracing method is done and the formulas to calculate the shape of ellipsoidal lens are given. Both the theoretical and experimental result show that the laser beam system works effectively; the divergence angle is reduced to less than 1 in the fast-axial direction. By using epoxy resin, this shaper collimates a semiconductor laser beam and packages the laser diode (LD) at the same time, which simplifies the manufacturing process and greatly reduces the LD volume. Because of the small volume, low-cost, high rigidity and easy fabrication, the shaper is of great value in the field of semiconductor laser diode applications. (c) 2012 Elsevier GmbH. All rights reserved.

Addresses: [Luo, Daxin; Zhao, Baiqin; Chen, Xuelei] Chinese Acad Sci, Inst Semicond, Beijing 100190, Peoples R China.

Reprint Address: Luo, DX (reprint author), Inst Semicond, 1 621,Jia 35, Beijing 100083, Peoples R China.

E-mail Addresses: luodaxin@gmail.com

ISSN: 0030-4026

Record 476 of 495

Title: Far infrared response of silicon nanowire arrays

Author(s): Fobelets, K (Fobelets, K.); Li, CB (Li, C. B.); Coquillat, D (Coquillat, D.); Arcade, P (Arcade, P.); Teppe, F (Teppe, F.)

Source: RSC ADVANCES Volume: 3 Issue: 13 Pages: 4434-4439 DOI: 10.1039/c3ra22880k Published: 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: The reflection, transmission and absorbance spectra of silicon nanowire arrays ( NWAs), as a function of the length of the nanowires, are investigated in a wavelength range of 15 mu m < lambda < 200 mu m, using Fourier transform infrared spectroscopy in vacuum. The NWAs are fabricated using metal-assisted electroless chemical etching. The wire length is varied between 20 mu m and 140 mu m, which is of the same order of magnitude as the wavelength, and their spectra are compared to bulk Si. At high frequencies the absorbance spectra of the NWAs show molecular resonances due to adsorption of molecules involved in the fabrication process but also due to the oxide quality that wraps the nanowires and changes as a function of nanowire length. Transmission characteristics show an increasing shift in absorption band edge towards the far infrared for longer wires and a transition from specular to diffuse reflection at a nanowire length of approximately 60 mu m.

Addresses: [Fobelets, K.; Li, C. B.] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7 2AZ, England.

[Li, C. B.] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Coquillat, D.; Arcade, P.; Teppe, F.] Univ Montpellier 2, CNRS, UMR 5221, Lab Charles Coulomb, F-34950 Montpellier, France.

Reprint Address: Fobelets, K (reprint author), Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, Exhibit Rd, London SW7 2AZ, England.

E-mail Addresses: k.fobelets@imperial.ac.uk

ISSN: 2046-2069

Record 477 of 495

Title: Fiber Bragg grating soil-pressure sensor based on dual L-shaped levers

Author(s): Li, F (Li, Feng); Du, YL (Du, Yanliang); Zhang, WT (Zhang, Wentao); Li, F (Li, Fang)

Source: OPTICAL ENGINEERING Volume: 52 Issue: 1 Article Number: 014403 DOI: 10.1117/1.OE.52.1.014403 Published: JAN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A fiber Bragg grating (FBG) soil-pressure sensor based on dual L-shaped levers is proposed and demonstrated. Using dual L-shaped levers, the deformation of the diaphragm, which experiences the soil pressure, will be transferred to the longitudinal strain of the FBG. The theoretical analysis on the sensitivity of the proposed sensor is given. The sensor has been calibrated in the laboratory. Experimental results show a good agreement with theoretical expectations. Furthermore, this soil-pressure sensor has been installed in an earth dam in Beijing, China. Drifting of the FBG wavelength has been collected in rainy days from May to July 2012. It has been found that the earth dam has an obvious change of internal stress in the rainstorm. (C) 2013 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.OE.52.1.014403]

Addresses: [Li, Feng; Zhang, Wentao; Li, Fang] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

[Li, Feng; Du, Yanliang] Shijiazhuang Tiedao Univ, Struct Hlth Monitoring & Control Inst, Shijiazhuang, Peoples R China.

Reprint Address: Li, F (reprint author), Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

E-mail Addresses: zhangwt@semi.ac.cn

ISSN: 0091-3286
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Record 478 of 495

Title: Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

Author(s): Zhao, WJ (Zhao, Weijie); Ghorannevis, Z (Ghorannevis, Zohreh); Chu, LQ (Chu, Leiqiang); Toh, ML (Toh, Minglin); Kloc, C (Kloc, Christian); Tan, PH (Tan, Ping-Heng); Eda, G (Eda, Goki)

Source: ACS NANO Volume: 7 Issue: 1 Pages: 791-797 DOI: 10.1021/nn305275h Published: JAN 2013

Times Cited in Web of Science: 19

Total Times Cited: 19

Abstract: Geometrical confinement effect in exfoliated sheets of layered materials leads to significant evolution of energy dispersion in mono- to few-layer thickness regime. Molybdenum disulfide (MoS2) was recently found to exhibit indirect-to-direct gap transition when the thickness is reduced to a single monolayer. Emerging photoluminescence (PL) from monolayer MoS2 opens up opportunities for a range of novel optoelectronic applications of the material. Here we report differential reflectance and PL spectra of mono- to few-layer WS2 and WSe2 that indicate that the band structure of these materials undergoes similar indirect-to-direct gap transition when thinned to a single monolayer. The transition is evidenced by distinctly enhanced PL peak centered at 630 and 750 nm in monolayer WS2 and WSe2, respectively. Few-layer flakes are found to exhibit comparatively strong indirect gap emission along with direct gap hot electron emission, suggesting high quality of synthetic crystals prepared by a chemical vapor transport method. Fine absorption and emission features and their thickness dependence suggest a strong effect of Se p-orbitals on the d electron band structure as well as interlayer coupling in WSe2.

Addresses: [Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang; Eda, Goki] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore.

[Eda, Goki] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore.

[Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang; Eda, Goki] Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore.

[Toh, Minglin; Kloc, Christian] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore.

[Tan, Ping-Heng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Eda, G (reprint author), Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore.

E-mail Addresses: g.eda@nus.edu.sg

ISSN: 1936-0851

Record 479 of 495

Title: The measurement of magneto-optical Kerr effect of ultrathin films in a pulsed magnetic field

Author(s): Chen, X (Chen, Xi); Qian, X (Qian, Xuan); Meng, KK (Meng, Kangkang); Zhao, JH (Zhao, Jianhua); Ji, Y (Ji, Yang)

Source: MEASUREMENT Volume: 46 Issue: 1 Pages: 52-56 DOI: 10.1016/j.measurement.2012.05.014 Published: JAN 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: A Kerr rotation measurement system in a pulsed magnetic field (up to 11 T) was built to study magnetic properties of several ultrathin films. Our result shows that the Kerr rotation angle increases with the increasing wavelength of the incident light, while the difference between the spectras of Fe and CoFeAl is attributed to plasma resonance. We also studied the dynamic properties of the magnetic films: while ferromagnetic materials (Fe, CoFeAl, MnAs and CoMnAl) show quasi-static behavior in the time-scale of a few 100 mu s, diamagnetic material GaAs shows time-dependent hysteresis. Crown Copyright (C) 2012 Published by Elsevier Ltd. All rights reserved.

Addresses: [Chen, Xi; Qian, Xuan; Meng, Kangkang; Zhao, Jianhua; Ji, Yang] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

Reprint Address: Ji, Y (reprint author), Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jiyang@semi.ac.cn

ISSN: 0263-2241

Record 480 of 495

Title: Improved performance of dye-sensitized solar cells with TiO2 nanocrystal/nanowires double-layered films as photoelectrode

Author(s): Meng, XQ (Meng, Xiuqing); Wang, Y (Wang, Yan); Wang, ML (Wang, Meili); Tu, JL (Tu, Jielei); Wu, FM (Wu, Fengmin)

Source: RSC ADVANCES Volume: 3 Issue: 10 Pages: 3304-3308 DOI: 10.1039/c2ra23430k Published: 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: A double-layered (DL) photoanode is fabricated based on TiO2 nanowire (NW) arrays coated by TiO2 nanocrystal (NC) films on their top. The highest efficiency of the obtained double-layered photoanode cells is similar to 4.67% with 8 mu m-long NW arrays and 6 mu m-thick NC films. This efficiency is much higher than that of the devices with the pure TiO2 NC films or the pure TiO2 NW arrays as electrodes due to the synergistic effect of the dye adsorption and the rapid electron transport of NWs/NC structure.

Addresses: [Meng, Xiuqing; Wu, Fengmin] Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua 321004, Peoples R China.

[Wang, Yan; Wang, Meili] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Tu, Jielei] Yunnan Normal Univ, Solar Energy Res Inst, Kunming 650092, Yunnan Province, Peoples R China.

Reprint Address: Meng, XQ (reprint author), Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua 321004, Peoples R China.

ISSN: 2046-2069
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Record 481 of 495

Title: Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping

Author(s): Wang, LC (Wang, Liancheng); Zhang, YY (Zhang, Yiyun); Li, X (Li, Xiao); Guo, EQ (Guo, Enqing); Liu, ZQ (Liu, Zhiqiang); Yi, XY (Yi, Xiaoyan); Zhu, HW (Zhu, Hongwei); Wang, GH (Wang, Guohong)

Source: RSC ADVANCES Volume: 3 Issue: 10 Pages: 3359-3364 DOI: 10.1039/c2ra22170e Published: 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: Electrical characteristics of p-, n-GaN/graphene junctions before and after nitric acid doping have been investigated. Acid treatment can significantly improve the junction conductance in both cases, which is advantageous for the light emitting diode (LED) to reduce the operating voltage. GaN-based vertical LEDs incorporating graphene as transparent electrodes are further assembled and tested, showing significant improvement in forward electrical characteristics and light output power upon acid modification.

Addresses: [Wang, Liancheng; Zhang, Yiyun; Guo, Enqing; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

[Li, Xiao; Zhu, Hongwei] Tsinghua Univ, Dept Mech Engn, Key Lab Adv Mfg Mat Proc Technol, Beijing 100084, Peoples R China.

[Zhu, Hongwei] Tsinghua Univ, CNMM, Beijing 100084, Peoples R China.

Reprint Address: Wang, LC (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: spring@semi.ac.cn; hongweizhu@tsinghua.edu.cn

ISSN: 2046-2069

Record 482 of 495

Title: High performance AlGaN/GaN power switch with Si3N4 insulation

Author(s): Lin, DF (Lin, Defeng); Wang, XL (Wang, Xiaoliang); Xiao, HL (Xiao, Hongling); Kang, H (Kang, He); Wang, CM (Wang, Cuimei); Jiang, LJ (Jiang, Lijuan); Feng, C (Feng, Chun); Chen, H (Chen, Hong); Deng, QW (Deng, Qingwen); Bi, Y (Bi, Yang); Zhang, JW (Zhang, Jingwen); Hou, X (Hou, Xun)

Source: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS Volume: 61 Issue: 1 Article Number: 10101 DOI: 10.1051/epjap/2012120366 Published: JAN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We report the fabrication of AlGaN/GaN high electron mobility transistors (MIS-HEMTs) with a high breakdown voltage by employing a metal-insulator-semiconductor (MIS) gate structure using Si3N4 insulator. The Si3N4 films were deposited by plasma enhanced chemical vapor deposition (PECVD) as the surface passivation, interlayer films and the gate dielectric. In comparison with Schottky-gate HEMTs, the gate leakage currents of MIS-HEMTs exhibited three orders of magnitude reduction. With similar device structures, the off-state breakdown voltage of MIS-HEMTs was 1050 V with a specific on-resistance of 4.0 m Omega cm(2), whereas the breakdown voltage and specific on-resistance of SG-HEMTs were 740 V and 4.4 m Omega cm(2), respectively. In addition, the MIS-HEMTs exhibited little current slump in the pulsed measurements and possessed faster switch speed than Si MOSFET. We demonstrate that AlGaN/GaN MIS-HEMTs are promising not only for microwave applications but also for high power switching applications.

Addresses: [Lin, Defeng; Wang, Xiaoliang; Xiao, Hongling; Kang, He; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Chen, Hong; Deng, Qingwen; Bi, Yang] Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.

[Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Chen, Hong] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.