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Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure


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[Liang, Jiran] Tianjin Univ, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China.

Reprint Address: Hu, ZG (reprint author), E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Dept Elect Engn, Shanghai 200241, Peoples R China.

E-mail Addresses: zghu@ee.ecnu.edu.cn

ISSN: 0022-3727
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Record 412 of 495

Title: Scattering due to large cluster embedded in quantum wells

Author(s): Liu, CB (Liu, Changbo); Zhao, GJ (Zhao, Guijuan); Liu, GP (Liu, Guipeng); Song, YF (Song, Yafeng); Zhang, H (Zhang, Heng); Jin, DD (Jin, Dongdong); Li, ZW (Li, Zhiwei); Liu, XL (Liu, Xianglin); Yang, SY (Yang, Shaoyan); Zhu, QS (Zhu, Qinsheng); Wang, ZG (Wang, Zhanguo)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 5 Article Number: 052105 DOI: 10.1063/1.4782218 Published: FEB 4 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Two dimensional electron gas mobility limited by the scattering of large cluster is studied. From this study, we find that the scattering caused by conduction band offset between host well and multiple mini-quantum well (mini-QW) series aligned along the QW channel, i.e., quantum pits, can be treated as a variable in our calculation. The results show that the mobility increases with increasing barrier height, which is opposite to the well-known interface roughness scattering mobility. To make the calculation simple, the InxGa1-xN/InyGa1-yN QW double-heterostructure is selected to along (11 (2) over bar0) non-polarized direction, along which the barrier and well are both flat. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4782218]

Addresses: [Liu, Changbo; Zhao, Guijuan; Liu, Guipeng; Song, Yafeng; Zhang, Heng; Jin, Dongdong; Li, Zhiwei; Liu, Xianglin; Yang, Shaoyan; Zhu, Qinsheng; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Liu, CB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: liuchb@semi.ac.cn; qszhu@semi.ac.cn

ISSN: 0003-6951


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Record 413 of 495

Title: Ultrathin Terahertz Planar Elements

Author(s): Hu, D (Hu, Dan); Wang, XK (Wang, Xinke); Feng, SF (Feng, Shengfei); Ye, JS (Ye, Jiasheng); Sun, WF (Sun, Wenfeng); Kan, Q (Kan, Qiang); Klar, PJ (Klar, Peter J.); Zhang, Y (Zhang, Yan)

Source: ADVANCED OPTICAL MATERIALS Volume: 1 Issue: 2 Pages: 186-191 DOI: 10.1002/adom.201200044 Published: FEB 2013

Times Cited in Web of Science: 6

Total Times Cited: 6

Abstract: Various ultrathin planar optical elements, including cylindrical lens, spherical lens, and phase holograms, are designed based on the interface phase modulation of antenna resonances in the terahertz (THz) range. The focusing and imaging performance of the lenses and image-reconstruction ability of the pure phase holograms are demonstrated experimentally. In contrast to conventional bulky optical elements where curve surfaces are used to control the light propagation, the manipulations of light propagation for these thin planar optical elements are achieved through designed arrays of complementary V-shaped antennas in the planar gold films with a thickness of 100 nm (1/4000th of the wavelength of the illuminating light). The adoption of the complementary V-shaped antennas makes the optical elements have double functions: light propagation manipulation and filtering, which improves the performance of the optical elements by blocking the disturbance from the direct transmission. This research is a significant step towards the reduction of the THz elements size and, therefore, to the development of micro-integrated THz systems and to other applications where the compaction is necessary. The approach used here can be expanded to multifarious optical elements in different wave bands.

Addresses: [Hu, Dan; Wang, Xinke; Feng, Shengfei; Ye, Jiasheng; Sun, Wenfeng; Zhang, Yan] Capital Normal Univ, Dept Phys, Beijing Key Lab Terahertz Spect & Imaging, Beijing 100048, Peoples R China.

[Hu, Dan; Wang, Xinke; Feng, Shengfei; Ye, Jiasheng; Sun, Wenfeng; Zhang, Yan] Minist Educ, Key Lab Terahertz Optoelect, Beijing 100048, Peoples R China.

[Hu, Dan; Zhang, Yan] Harbin Inst Technol, Dept Phys, Harbin 150001, Peoples R China.

[Kan, Qiang] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

[Klar, Peter J.] Univ Giessen, Inst Expt Phys 1, D-35392 Giessen, Germany.

Reprint Address: Zhang, Y (reprint author), Capital Normal Univ, Dept Phys, Beijing Key Lab Terahertz Spect & Imaging, Beijing 100048, Peoples R China.

E-mail Addresses: yzhang@mail.cnu.edu.cn

ISSN: 2195-1071


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Record 414 of 495

Title: Low-Temperature Performance of Accumulation-Mode p-Channel Wrap-Gated FinFETs

Author(s): Zhang, YB (Zhang, Yanbo); Du, YD (Du, Yandong); Chen, YK (Chen, Yankun); Li, XM (Li, Xiaoming); Yang, X (Yang, Xiang); Han, WH (Han, Weihua); Yang, FH (Yang, Fuhua)

Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 13 Issue: 2 Pages: 804-807 DOI: 10.1166/jnn.2013.6074 Published: FEB 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this work, accumulation-mode (AM) p-channel wrap-gated FinFETs and AM p-channel planar FETs are fabricated using top-down strategies, and compared in performance at temperatures from 6 K to 295 K. The threshold voltage variation of the AM wrap-gated FinFET is slightly larger than that of the AM planar FET. The drain current and the peak transconductance in the AM wrap-gated FinFET are larger than those in the AM planar FET, and those differences are temperature dependent. We attribute those to the body current enhancement in the AM wrap-gated FinFET as temperature increases. The subthreshold swings (SS) of both types of the FETs improve with temperature decreasing and get lower than 10 mV/dec at 6 K. The higher SS in the AM wrap-gated FinFET is likely due to a high interface state density at the fin sidewalls arising from the fin patterning induced defects.

Addresses: [Zhang, Yanbo; Du, Yandong; Chen, Yankun; Li, Xiaoming; Yang, Xiang; Han, Weihua; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China.

[Zhang, Yanbo] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China.

[Yang, Fuhua] State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Han, WH (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China.

ISSN: 1533-4880
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Record 415 of 495

Title: Formation and Characterization of Multilayer GeSi Nanowires on Miscut Si (001) Substrates

Author(s): Gong, H (Gong, Hua); Chen, PX (Chen, Peixuan); Ma, YJ (Ma, Yingjie); Wang, LJ (Wang, Lijun); Rastelli, A (Rastelli, Armando); Schmidt, OG (Schmidt, Oliver G.); Zhong, ZY (Zhong, Zhenyang)

Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 13 Issue: 2 Pages: 834-838 DOI: 10.1166/jnn.2013.5979 Published: FEB 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A multilayer of GeSi nanowires separated with Si spacers was readily self-assembled on miscut Si (001) substrates with 8 degrees off toward < 110 >. The nanowires oriented along the miscut direction were very small and compactly arranged on the vicinal surface. Systematic photoluminescence (PL) spectroscopy studies were carried out on the GeSi nanowires. With increasing excitation power, a sublinear power dependent PL intensity and a blue-shift of similar to 7 meV/decade with nearly constant full width of half maximum (FWHM) of PL peaks from multilayer GeSi nanowires was observed. These results indicated a typical type-II band alignment of GeSi nanowires/Si. The blue-shift was attributed to band bending effect with the increase of photon-generated carriers. The nearly independent FWHM of PL peaks with the excitation power was explained in terms of the formation of mini-band due to strong coupling of holes in closely neighboring nanowires. An activation energy of similar to 12 meV was extracted from the temperature-dependent intensity of PL peaks of the nanowires, which was assigned to be the exciton binding energy around the nanowires. Based on Raman spectra, the Ge content in GeSi nanowires was estimated to be similar to 61%.

Addresses: [Gong, Hua; Ma, Yingjie; Zhong, Zhenyang] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China.

[Gong, Hua; Ma, Yingjie; Zhong, Zhenyang] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China.

[Chen, Peixuan; Rastelli, Armando; Schmidt, Oliver G.] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany.

[Wang, Lijun] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhong, ZY (reprint author), Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China.

ISSN: 1533-4880


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Record 416 of 495

Title: Polystyrene-Microsphere-Assisted Patterning of ZnO Nanostructures: Growth and Characterization

Author(s): Dong, JJ (Dong, J. J.); Zhang, XW (Zhang, X. W.); Zhang, SG (Zhang, S. G.); Tan, HR (Tan, H. R.); Yin, ZG (Yin, Z. G.); Gao, Y (Gao, Y.); Wang, JX (Wang, J. X.)

Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 13 Issue: 2 Pages: 1101-1105 DOI: 10.1166/jnn.2013.5980 Published: FEB 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: In this work, periodic arrays of various ZnO nanostructures were fabricated on both Si and GaN substrates via a facile hydrothermal process. To realize the site-specific growth, two kinds of masks were introduced. The polystyrene (PS) microsphere self-assembled monolayer (SAM) was employed as the mask to create a patterned seed layer to guide the growth of ZnO nanostructures. However, the resulting ZnO nanostructures are non-equidistant, and the diameter of the ZnO nanostructures is uncontrollable. As an alternative, TiO2 sol was used to replicate the PS microsphere SAM, and the inverted SAM (ISAM) mask was obtained by extracting the PS microspheres with toluene. By using the ISAM mask, the hexagonal periodic array of ZnO nanostructures with high uniformity were readily produced. Furthermore, the effect of the underlying substrates on the morphology of ZnO nanostructures has been investigated. It is found that the highly ordered and vertically aligned ZnO nanorods epitaxially grow on the GaN substrate, while the ZnO nanoflowers on Si substrates are random oriented.

Addresses: [Dong, J. J.; Zhang, X. W.; Zhang, S. G.; Tan, H. R.; Yin, Z. G.; Gao, Y.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Wang, J. X.] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol R&D Ctr, Beijing 100083, Peoples R China.

Reprint Address: Zhang, XW (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

ISSN: 1533-4880


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Record 417 of 495

Title: Optical transition of the charged excitons in InAs single quantum dots

Author(s): Li, WS (Li Wen-Sheng); Sun, BQ (Sun Bao-Quan)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 4 Article Number: 047801 DOI: 10.7498/aps.62.047801 Published: FEB 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Quantum dot (QD) samples studied in the experiment are grown by molecular-beam epitaxy on semi-insulating GaAs substrates. The photoluminescences (PLs) of the excitons in a single QD are measured at 5 K. The PL spectra of the excitons, biexcitons and charged excitons are identified by measuring and analyzing both PL peaks of the circular and linear polarization and power-dependent PL properties. The charged exciton emissions can be tuned by applying a bias voltage, i.e., negatively charged excitons are changed into positively charged excitons by changing the voltage from 1.0 to -1.0 V. It is shown that the electron-spin will slowly relax compared with that of the hole when they relax from wetting layer into the QD.

Addresses: [Li Wen-Sheng] Tongliao Profess Educ Coll, Coll Chem Engn, Tongliao 028000, Peoples R China.

[Sun Bao-Quan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Sun, BQ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: bqsun@semi.ac.cn

ISSN: 1000-3290
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Record 418 of 495

Title: Highly nonlinear property and threshold voltage of Sc2O3 doped ZnO-Bi2O3-based varistor ceramics

Author(s): Xu, D (Xu Dong); Wu, JT (Wu Jieting); Jiao, L (Jiao Lei); Xu, HX (Xu Hongxing); Zhang, PM (Zhang Peimei); Yu, RH (Yu Renhong); Cheng, XN (Cheng Xiaonong)

Source: JOURNAL OF RARE EARTHS Volume: 31 Issue: 2 Pages: 158-163 DOI: 10.1016/S1002-0721(12)60251-8 Published: FEB 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: A series of ZnO-Bi2O3-based varistor ceramics doped with 0-0.4 mol.% Sc2O3 were prepared by high-energy ball milling and sintered at temperatures between 1000 and 1150 degrees C. X-ray diffractometry (XRD) and scanning electron microscopy (SEM) were applied to characterize the phases and microstructure of the varistor ceramics. A DC parameter instrument for varistor ceramics was applied to investigate the electronic properties and V-I characteristics. The results showed that there were no changes in crystal structure with Sc2O3-doped varistor ceramics and that the average size of ZnO grain increased first and then decreased. The best electronic characteristics of the varistor ceramics prepared by high-energy ball milling were found in 0.3 mol.% Sc2O3-doped ZnO-Bi2O3-based ceramics sintered at 1000 degrees C, which exhibited a threshold voltage of 821 V/mm, nonlinear coefficient of 62.1 and leakage current of 0.16 mu A.

Addresses: [Xu Dong; Wu Jieting; Jiao Lei; Xu Hongxing; Zhang Peimei; Yu Renhong; Cheng Xiaonong] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China.

[Xu Dong] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Xu Dong] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China.

[Xu Dong] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China.

[Xu Dong] Jiangsu Univ, Changzhou Engn Res Inst, Changzhou 213000, Peoples R China.

[Zhang Peimei; Yu Renhong] Changzhou Ming Errui Ceram Co Ltd, Changzhou 213102, Peoples R China.

Reprint Address: Xu, D (reprint author), Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China.

E-mail Addresses: frank@ujs.edu.cn

ISSN: 1002-0721
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Record 419 of 495

Title: Radial n-i-p structure silicon nanowire-based solar cells on flexible stainless steel substrates

Author(s): Xie, XB (Xie, Xiaobing); Zeng, XB (Zeng, Xiangbo); Yang, P (Yang, Ping); Li, H (Li, Hao); Li, JY (Li, Jingyan); Zhang, XD (Zhang, Xiaodong); Wang, QM (Wang, Qiming)

Source: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Volume: 210 Issue: 2 Pages: 341-344 DOI: 10.1002/pssa.201228595 Published: FEB 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Radial n-i-p structure silicon nanowires-(SiNWs) based solar cells on flexible stainless steel substrates have been fabricated by plasma-enhanced chemical vapor deposition (PECVD). The highest open-circuit voltage (V-oc) and short-circuit current density (J(sc)) for AM 1.5 illumination were 0.62 V and 13.36 mA cm(-2), respectively, at a maximum power conversion efficiency of 3.56%. The optical reflectance of the SiNWs solar cells over a broad rang of wavelengths (300-1000 nm) is reduced by similar to 80% in average compared to planar silicon thin film cells. The external quantum efficiency (EQE) measurements show that the EQE response of SiNWs solar cells is improved greatly in the wavelength range of 550-750 nm compared to corresponding planar silicon thin film solar cells. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Addresses: [Xie, Xiaobing; Zeng, Xiangbo; Yang, Ping; Li, Hao; Li, Jingyan; Zhang, Xiaodong; Wang, Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Xie, XB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: xbxie@semi.ac.cn

ISSN: 1862-6300


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Record 420 of 495

Title: Vertical cavity surface emitting laser transverse mode and polarization control by elliptical hole photonic crystal

Author(s): Cao, T (Cao Tian); Xu, C (Xu Chen); Xie, YY (Xie Yi-Yang); Kan, Q (Kan Qiang); Wei, SM (Wei Si-Min); Mao, MM (Mao Ming-Ming); Chen, HD (Chen Hong-Da)

Source: CHINESE PHYSICS B Volume: 22 Issue: 2 Article Number: 024205 DOI: 10.1088/1674-1056/22/2/024205 Published: FEB 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The polarization of traditional photonic crystal (PC) vertical cavity surface emitting laser (VCSEL) is uncontrollable, resulting in the bit error increasing easily. Elliptical hole photonic crystal can control the transverse mode and polarization of VCSEL efficiently. We analyze the far field divergence angle, and birefringence of elliptical hole PC VCSEL. When the ratio of minor axis to major axis b/a = 0.7, the PC VCSEL can obtain single mode and polarization. According to the simulation results, we fabricate the device successfully. The output power is 1.7 mW, the far field divergence angle is less than 10 degrees, and the side mode suppression ratio is over 30 dB. The output power in the Y direction is 20 times that in the X direction.

Addresses: [Cao Tian; Xu Chen; Xie Yi-Yang; Wei Si-Min; Mao Ming-Ming] Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China.

[Xie Yi-Yang; Kan Qiang; Chen Hong-Da] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Xu, C (reprint author), Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China.

E-mail Addresses: xuchen58@bjut.edu.cn

ISSN: 1674-1056
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Record 421 of 495

Title: 0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP(1-y)buffers

Author(s): Ji, L (Ji Lian); Lu, SL (Lu Shu-Long); Jiang, DS (Jiang De-Sheng); Zhao, YM (Zhao Yong-Ming); Tan, M (Tan Ming); Zhu, YQ (Zhu Ya-Qi); Dong, JR (Dong Jian-Rong)

Source: CHINESE PHYSICS B Volume: 22 Issue: 2 Article Number: 026802 DOI: 10.1088/1674-1056/22/2/026802 Published: FEB 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Single-junction, lattice-mismatched In0.69Ga0.31As thermophotovoltaic (TPV) devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition (MOCVD). Compositionally undulating step-graded InAsyP1-y buffer layers with a lattice mismatch of similar to 1.2% are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate. With an optimized buffer thickness, the In0.69Ga0.31As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion. High-performance single-junction devices are demonstrated, with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm(2), which are measured under the standard solar simulator of air mass 1.5-global (AM 1.5 G).

Addresses: [Ji Lian; Lu Shu-Long; Zhao Yong-Ming; Tan Ming; Zhu Ya-Qi; Dong Jian-Rong] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215125, Peoples R China.

[Jiang De-Sheng] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Lu, SL (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215125, Peoples R China.

E-mail Addresses: sllu2008@sinano.ac.cn

ISSN: 1674-1056
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Record 422 of 495

Title: Annealing effect on magnetic anisotropy in ultrathin (Ga, Mn)As

Author(s): Li, YY (Li Yan-Yong); Wang, HF (Wang Hua-Feng); Cao, YF (Cao Yu-Fei); Wang, KY (Wang Kai-You)

Source: CHINESE PHYSICS B Volume: 22 Issue: 2 Article Number: 027504 DOI: 10.1088/1674-1056/22/2/027504 Published: FEB 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm ultrathin Ga0.94Mn0.06As devices by measuring the angle-dependent planar Hall resistance (PHR). Obvious hysteresis loops were observed during the magnetization reversal through the clockwise and counterclockwise rotations under low magnetic fields (below 1000 Gs, 1 Gs = 10(-4) T), which can be explained by competition between Zeeman energy and magnetic anisotropic energy. It is found that the uniaxial anisotropy is dominant in the whole measured ferromagnetic range for both the as-grown ultrathin Ga0.94Mn0.06As and the annealed one. The cubic anisotropy changes more than the uniaxial anisotropy in the measured temperature ranges after annealing. This gives a useful way to tune the magnetic anisotropy of ultrathin (Ga,Mn)As devices.

Addresses: [Li Yan-Yong; Wang Hua-Feng; Cao Yu-Fei; Wang Kai-You] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Wang, KY (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: kywang@semi.ac.cn

ISSN: 1674-1056


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Record 423 of 495

Title: The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar Cells

Author(s): Li, L (Li Liang); Zhao, DG (Zhao De-Gang); Jiang, DS (Jiang De-Sheng); Liu, ZS (Liu Zong-Shun); Chen, P (Chen Ping); Wu, LL (Wu Liang-Liang); Le, LC (Le Ling-Cong); Wang, H (Wang Hui); Yang, H (Yang Hui)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 2 Article Number: 028801 DOI: 10.1088/0256-307X/30/2/028801 Published: FEB 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: An InGaN/GaN p-i-n solar cell inserted with a 5-nm low-temperature (LT) GaN interlayer between the p-GaN cap layer and the InGaN i-layer is grown on a c-plane sapphire substrate by metal organic chemical vapor deposition. The effects of the LT GaN interlayer on the performance of the InGaN/GaN solar cells are investigated. It is found that the LT-GaN interlayer prevents the extension of threading dislocations from the InGaN layer to the p-GaN layer and improves the crystal quality of both the p-GaN cap layer and the InGaN i-layer, ultimately leading to an increasing external quantum efficiency and photocurrent density of the InGaN/GaN solar cells.

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