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Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure


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Addresses: [Zhang, Feng; Sun, Guosheng; Zhao, Wanshun; Wang, Lei; Zeng, Liu; Liu, Shengbei; Liu, Bin; Dong, Lin; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Zhang, F (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: fzhang@semi.ac.cn

ISSN: 1932-7447


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Record 14 of 495

Title: Absorption enhancement using nanoneedle array for solar cell

Author(s): Zhang, X (Zhang, Xu); Sun, XH (Sun, Xiao-Hong); Jiang, LD (Jiang, Liu-Di)

Source: APPLIED PHYSICS LETTERS Volume: 103 Issue: 21 Article Number: 211110 DOI: 10.1063/1.4832216 Published: NOV 18 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A theoretical analysis of light trapping properties of Gallium arsenide (GaAs) nanoneedle arrays (NNAs) solar cells is presented. The effect of geometric parameters on the optical absorption of NNAs has been analyzed by using rigorous coupled wave analysis algorithm and finite element method. Compared with nanowire arrays and thin-film layer counterpart, higher light absorption efficiency can be achieved in GaAs NNAs, due to the graded refractive index of NNAs that incident light can be coupled into the NNAs efficiently. The absorption profiles at different wavelength and angle-dependant optical properties of NNAs are also evaluated. Meanwhile, the short-circuit current of GaAs NNAs for various lengths at fixed filling factor is obtained. (C) 2013 AIP Publishing LLC.

Addresses: [Zhang, Xu; Sun, Xiao-Hong] Zhengzhou Univ, Henan Key Lab Laser & Optoelect Informat Technol, Zhengzhou 450052, Henan, Peoples R China.

[Sun, Xiao-Hong] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Jiang, Liu-Di] Univ Southampton, Fac Engn & Environm, Engn Mat Res Grp, Southampton SO17 1BJ, Hants, England.

Reprint Address: Zhang, X (reprint author), Zhengzhou Univ, Henan Key Lab Laser & Optoelect Informat Technol, Zhengzhou 450052, Henan, Peoples R China.

E-mail Addresses: zhangxubetter@gmail.com

ISSN: 0003-6951


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Record 15 of 495

Title: Low cross-talk 2 x 2 silicon electro-optic switch matrix with a double-gate configuration

Author(s): Xing, JJ (Xing, Jiejiang); Li, ZY (Li, Zhiyong); Yu, YD (Yu, Yude); Yu, JZ (Yu, Jinzhong)

Source: OPTICS LETTERS Volume: 38 Issue: 22 Pages: 4774-4776 DOI: 10.1364/OL.38.004774 Published: NOV 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this study, a low cross-talk 2 x 2 silicon electro-optic switch matrix based on a double-gate configuration is proposed and experimentally demonstrated. The switch matrix consists of four Mach-Zehnder-based 2 x 2 switching elements with 400 mu m long modulation arms. Low cross-talk values of -31 and -43 dB are, respectively, obtained for the "cross" and "bar" states over a 40 nm wide wavelength range around 1550 nm. The values for the total steady-state power consumption of the "cross" and "bar" states are 40.8 and 19.1 mW, respectively. (C) 2013 Optical Society of America

Addresses: [Xing, Jiejiang; Li, Zhiyong; Yu, Yude; Yu, Jinzhong] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Yu, YD (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yudeyu@semi.ac.cn

ISSN: 0146-9592


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Record 16 of 495

Title: Widely tunable single-bandpass microwave photonic filter based on polarization processing of a nonsliced broadband optical source

Author(s): Wang, H (Wang, Hui); Zheng, JY (Zheng, Jian Yu); Li, W (Li, Wei); Wang, LX (Wang, Li Xian); Li, M (Li, Ming); Xie, L (Xie, Liang); Zhu, NH (Zhu, Ning Hua)

Source: OPTICS LETTERS Volume: 38 Issue: 22 Pages: 4857-4860 DOI: 10.1364/OL.38.004857 Published: NOV 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We propose a new scheme of microwave photonic filter (MPF) based on the polarization processing of a broadband optical source (BOS), which features single-bandpass response and a wide span of operation bandwidth. The BOS is orthogonally polarized by a polarization division multiplexing emulator (PDME) with a tunable time delay between the two polarization states and incident at +/- 45 degrees to one principle axis of a polarization modulator (PolM). The PDME cascades a PolM, and a polarizer realizes a microwave modulation making the phase of the carrier able to be tuned while +/- 1st sidebands remain unchanged, which after propagating in a dispersive medium results in a tunable single-bandpass response in the RF domain. We experimentally verify the MPF. By adjusting the time delay and the optical spectrum bandwidth, the passband center frequency is continuously tuned from DC to 20 GHz and the 3 dB passband bandwidth changes while the optical spectrum bandwidth ranges from 1 to 4 nm. (C) 2013 Optical Society of America

Addresses: [Wang, Hui; Zheng, Jian Yu; Li, Wei; Wang, Li Xian; Li, Ming; Xie, Liang; Zhu, Ning Hua] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Xie, L (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: xiel@semi.ac.cn

ISSN: 0146-9592


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Record 17 of 495

Title: 1.06-mu m InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure

Author(s): Wang, HL (Wang, Huolei); Mi, JP (Mi, Junping); Zhou, XL (Zhou, Xuliang); Meriggi, L (Meriggi, Laura); Steer, M (Steer, Matthew); Cui, BF (Cui, Bifeng); Chen, WX (Chen, Weixi); Pan, JQ (Pan, Jiaoqing); Ding, Y (Ding, Ying)

Source: OPTICS LETTERS Volume: 38 Issue: 22 Pages: 4868-4871 DOI: 10.1364/OL.38.004868 Published: NOV 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: InGaAs/GaAs multiple quantum well (MQW)-depleted optical thyristor lasers operating at 1.06 mu m with a waveguide-type PiNiN structure is presented for the first time. The optical thyristor lasers clearly show nonlinear S-shaped current-voltage and lasing characteristics. The measured switching voltage and current are 5 V and 1 mA, respectively. The holding voltage and current are 2.6 V and 3.6 mA, respectively. A relatively high output light power of 30 mW per facet at room temperature is achieved. The lasing wavelength is 1.055 mu m at a bias current of 80 mA at 25 degrees C. (C) 2013 Optical Society of America

Addresses: [Wang, Huolei; Mi, Junping; Zhou, Xuliang; Pan, Jiaoqing] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Meriggi, Laura; Steer, Matthew; Ding, Ying] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland.

[Cui, Bifeng] Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China.

[Chen, Weixi] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China.

[Chen, Weixi] Peking Univ, Sch Phys, Beijing 100871, Peoples R China.

Reprint Address: Pan, JQ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: jqpan@semi.ac.cn

ISSN: 0146-9592


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Record 18 of 495

Title: Enhanced trion emission from colloidal quantum dots with photonic crystals by two-photon excitation

Author(s): Xu, XS (Xu, Xingsheng)

Source: SCIENTIFIC REPORTS Volume: 3 Article Number: 3228 DOI: 10.1038/srep03228 Published: NOV 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: For colloidal quantum dots, the ongoing biggest problem is their fluorescence blinking. Until now, there is no generally accepted model for this fluorescence blinking. Here, two-photon excited fluorescence from CdSe/ZnS nanocrystals on silicon nitride photonic crystals is studied using a femtosecond laser. From analysis of the spectra and decay processes, most of the relative trion efficiency is larger than 10%, and the largest relative trion efficiency reaches 46.7%. The photonic crystals enhance the trion emission of CdSe/ZnS nanocrystals, where the enhancement is due to the coupling of the trion emission to the leaky mode of the photonic crystal slab. Moreover, the photonic crystals enhance the Auger-assisted trapping efficiency of electrons/holes to surface states, and then enhance the efficiency of the generations of charge separation and DC electric field, which modifies the trion spectrum. Therefore, a model is present for explaining the mechanism of fluorescence blinking including the effect of the environment.

Addresses: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Xu, XS (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: xsxu@semi.ac.cn

ISSN: 2045-2322


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Record 19 of 495

Title: 16-Channel Fiber Laser Sensing System Based on Phase Generated Carrier Algorithm

Author(s): Fang, GS (Fang, Gaosheng); Xu, TW (Xu, Tuanwei); Li, F (Li, Fang)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 22 DOI: 10.1109/LPT.2013.2282400 Published: NOV 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A 16-channel fiber laser sensing system based on four wavelength and four space division multiplexing and phase generated carrier (PGC) algorithm is proposed. Through introducing dc block and normalization technology, the influence of light intensity and fringe visibility is decreased. A point-bypoint calculation is adopted during PGC processing and we realized 16 channels real-time synchronous demodulation with high performance and stability based on PC and LabView. The wavelength shift resolution of the system is 6 x 10(-7)pm/root Hz, the linearity is >99.9%, and the dynamic range is 115 dB at 10 Hz and 98 dB at 100 Hz. For multichannel demodulation, the amplitude consistency is >96% and crosstalk less than -60 dB has been obtained; the correlation coefficient between the real signal and demodulated signal is >98%.

Addresses: [Fang, Gaosheng; Xu, Tuanwei; Li, Fang] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

Reprint Address: Fang, GS (reprint author), Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

E-mail Addresses: fanggaosheng@semi.ac.cn; xutuanwei@semi.ac.cn; lifang@semi.ac.cn

ISSN: 1041-1135


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Record 20 of 495

Title: Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers

Author(s): Peng, EC (Peng, Enchao); Wang, XL (Wang, Xiaoliang); Xiao, HL (Xiao, Hongling); Wang, CM (Wang, Cuimei); Yin, HB (Yin, Haibo); Chen, H (Chen, Hong); Feng, C (Feng, Chun); Jiang, LJ (Jiang, Lijuan); Hou, X (Hou, Xun); Wang, ZG (Wang, Zhanguo)

Source: JOURNAL OF CRYSTAL GROWTH Volume: 383 Pages: 25-29 DOI: 10.1016/j.jcrysgro.2013.07.017 Published: NOV 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: High electron mobility transistors (HEMTs) structures with GaN, Al0.025Ga0.975N and Al0.04Ca0.96N high resistivity (HR) buffers were grown on sapphire by metal organic chemical vapor deposition (MOCVD). The structural and electrical properties of these three samples were investigated and compared. By increasing Al composition of AlGaN buffer, full width at half maximum (FWHM) values of (0002) and (10-12) x-ray rocking curves for buffer increase, indicating higher threading dislocation density. Room temperature noncontact Hall measurements were performed, and the measured 2DEG mobility was 1828 cm(2)/V s for GaN buffer, 1728 m(2)/V s for Al0.025Ga0.975N buffer, and 1649 cm(2)/V s for Al0.04Ga0.96N buffer, respectively. Combining the theoretical calculation with the experiments, it was demonstrated that the decrease of mobility was attributed to higher dislocation density in sample with higher Al composition of AlGaN buffer. Devices were fabricated and it was found that the double heterojunction (DH) HEMT with Al0.025Ga0.975N buffer could effectively reduce the buffer leakage current. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Peng, Enchao; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Wang, Xiaoliang; Hou, Xun] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China.

Reprint Address: Wang, XL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: xlwang@semi.ac.cn

ISSN: 0022-0248
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Record 21 of 495

Title: Design of an all-optical switch and arbitrary proportion of energy output beam splitter

Author(s): Qing-Hua, L (Qing-Hua, Liao); Xuan, Z (Xuan, Zhang); Shu-Wen, C (Shu-Wen, Chen); Ping, H (Ping, Hu); Tian-Bao, Y (Tian-Bao, Yu); Yong-Zhen, H (Yong-Zhen, Huang)

Source: PHYSICS LETTERS A Volume: 377 Issue: 38 Pages: 2561-2563 DOI: 10.1016/j.physleta.2013.07.058 Published: NOV 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Based on the Kerr effect of photonic crystal, we design a simple structure of all-optical switch, which can be controlled by the pump intensity. At the same time, the structure can also realize the free control of energy output. It has low insertion loss and crosstalk. Numerical simulation results embody its high efficiency. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Qing-Hua, Liao; Xuan, Zhang; Shu-Wen, Chen; Ping, Hu; Tian-Bao, Yu] Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R China.

[Yong-Zhen, Huang] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Qing-Hua, L (reprint author), Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R China.

E-mail Addresses: lqhua@ncu.edu.cn

ISSN: 0375-9601
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Record 22 of 495

Title: Impact of ammonia on the electrical properties of p-type Si nanowire arrays

Author(s): Li, CB (Li, Chuanbo); Zhang, CQ (Zhang, Chunqian); Fobelets, K (Fobelets, Kristel); Zheng, J (Zheng, Jun); Xue, CL (Xue, Chunlai); Zuo, YH (Zuo, Yuhua); Cheng, BW (Cheng, Buwen); Wang, QM (Wang, Qiming)

Source: JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 17 Article Number: 173702 DOI: 10.1063/1.4827184 Published: NOV 7 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The electrical properties of vertically upstanding p-type silicon nanowires arrays in the ambience of NH3 are studied. It is found that, the introducing of ammonia lowers their conductivity. By investigating the absorption and desorption processes of ammonia on nanowires (NW) surfaces, the current modulations of Si NWAs are interpreted in terms of band bending at the NW edge due to injections of negative carriers from ammonia. (c) 2013 AIP Publishing LLC.

Addresses: [Li, Chuanbo; Zhang, Chunqian; Zheng, Jun; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Fobelets, Kristel] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7 2AZ, England.

Reprint Address: Li, CB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: cbli@semi.ac.cn

ISSN: 0021-8979
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Record 23 of 495

Title: Metal to semiconductor transition in metallic transition metal dichalcogenides

Author(s): Li, Y (Li, Yan); Tongay, S (Tongay, Sefaattin); Yue, Q (Yue, Qu); Kang, J (Kang, Jun); Wu, JQ (Wu, Junqiao); Li, JB (Li, Jingbo)

Source: JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 17 Article Number: 174307 DOI: 10.1063/1.4829464 Published: NOV 7 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We report on tuning the electronic and magnetic properties of metallic transition metal dichalcogenides (mTMDCs) by 2D to 1D size confinement. The stability of the mTMDC monolayers and nanoribbons is demonstrated by the larger binding energy compared to the experimentally available semiconducting TMDCs. The 2D MX2 (M = Nb, Ta; X = S, Se) monolayers are non-ferromagnetic metals and mechanically softer compared to their semiconducting TMDCs counterparts. Interestingly, mTMDCs undergo metal-to-semiconductor transition when the ribbon width approaches to similar to 13 angstrom and similar to 7 angstrom for zigzag and armchair edge terminations, respectively; then these ribbons convert back to metal when the ribbon widths further decrease. Zigzag terminated nanoribbons are ferromagnetic semiconductors, and their magnetic properties can also be tuned by hydrogen edge passivation, whereas the armchair nanoribbons are non-ferromagnetic semiconductors. Our results display that the mTMDCs offer a broad range of physical properties spanning from metallic to semiconducting and non-ferromagnetic to ferromagnetic that is ideal for applications where stable narrow bandgap semiconductors with different magnetic properties are desired. (c) 2013 AIP Publishing LLC.

Addresses: [Li, Yan; Kang, Jun; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.

[Tongay, Sefaattin; Wu, Junqiao] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA.

[Yue, Qu] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China.

Reprint Address: Li, Y (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: jbli@semi.ac.cn

ISSN: 0021-8979


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Record 24 of 495

Title: Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

Author(s): Peng, EC (Peng, Enchao); Wang, XL (Wang, Xiaoliang); Xiao, HL (Xiao, Hongling); Wang, CM (Wang, Cuimei); Yin, HB (Yin, Haibo); Chen, H (Chen, Hong); Feng, C (Feng, Chun); Jiang, LJ (Jiang, Lijuan); Hou, X (Hou, Xun); Wang, ZG (Wang, Zhanguo)

Source: JOURNAL OF ALLOYS AND COMPOUNDS Volume: 576 Pages: 48-53 DOI: 10.1016/j.jallcom.2013.04.085 Published: NOV 5 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Peng, Enchao; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Wang, Xiaoliang; Hou, Xun] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China.

Reprint Address: Peng, EC (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: ecpeng@semi.ac.cn

ISSN: 0925-8388
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Record 25 of 495

Title: Design of polarization-independent adiabatic splitters fabricated on silicon-on-insulator substrates

Author(s): Xing, JJ (Xing, Jiejiang); Li, ZY (Li, Zhiyong); Yu, YD (Yu, Yude); Yu, JZ (Yu, Jinzhong)

Source: OPTICS EXPRESS Volume: 21 Issue: 22 Pages: 26729-26734 DOI: 10.1364/OE.21.026729 Published: NOV 4 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A novel design for a polarization-independent SOI-based 2 x 2 3-dB adiabatic splitter with sub-micron-scale dimensions is proposed and modeled. To achieve slow and smooth mode evolution, a structure with simultaneous tapering of velocity and coupling is used. To reduce the adiabatic region length by adjusting the gap separation, the coupling strengths of TE and TM polarizations as a function of the gap value are analyzed. For both polarizations, a high uniformity within +/- 0.2dB over a broad bandwidth from 1520 to 1650 nm is achieved with a 300-mu m-long adiabatic region. (C)2013 Optical Society of America

Addresses: [Xing, Jiejiang; Li, Zhiyong; Yu, Yude; Yu, Jinzhong] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Yu, YD (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yudeyu@semi.ac.cn

ISSN: 1094-4087


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Record 26 of 495

Title: High bandwidth surface-illuminated InGaAs/InP uni-travelling- carrier photodetector

Author(s): Li, C (Li Chong); Xue, CL (Xue Chun-Lai); Li, CB (Li Chuan-Bo); Liu, Z (Liu Zhi); Cheng, BW (Cheng Bu-Wen); Wang, QM (Wang Qi-Ming)

Source: CHINESE PHYSICS B Volume: 22 Issue: 11 Article Number: 118503 DOI: 10.1088/1674-1056/22/11/118503 Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Uni-traveling-carrier photodiodes (UTC-PDs) with ultrafast response and high saturation output are reported. A gradient doping layer and a narrow InP cliff layer were introduced to enhance the saturation and bandwidth characteristics. We measured the dark current, photo response, bandwidth, and saturation current of the fabricated UTC devices. For a 15-mu m-diameter device, the dark current was 3.5 nA at a reverse bias of 1 V, and the 3-dB bandwidth was 17.2 GHz at a reverse bias of 5 V, which are comparable to the theoretically values. The maximum responsivity at 1.55 mu m was 0.32 A/W. The saturation output current was over 19.0 mA without bias.

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