Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Source: OPTICS EXPRESS Volume: 21 Issue: 7 Pages: 8844-8855 DOI: 10.1364/OE.21.008844 Published: APR 8 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A lateral cavity photonic crystal surface emitting laser (LC-PCSEL) with airholes of cone-like shape etched near to the active layer is fabricated. It employs only a simple commercial epitaxial wafer without DBR and needs no wafer bonding technique. Surface emitting lasing action at 1575 nm with power of 1.8 mW is observed at room temperature, providing potential values for mass production of electrically driven PCSELs with low cost. Additionally, Fano resonance is utilized to analyze aperture equivalence of PC, and energy distribution in simplified laser structure is simulated to show oscillation and transmission characteristics of laser. (c) 2013 Optical Society of America

Addresses: [Wang, Yufei; Qu, Hongwei; Zhou, Wenjun; Qi, Aiyi; Zhang, Jianxin; Liu, Lei; Zheng, Wanhua] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Wang, YF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: whzheng@semi.ac.cn

ISSN: 1094-4087

Record 323 of 495

Title: Anomalous Raman spectra and thickness-dependent electronic properties of WSe2

Author(s): Sahin, H (Sahin, H.); Tongay, S (Tongay, S.); Horzum, S (Horzum, S.); Fan, W (Fan, W.); Zhou, J (Zhou, J.); Li, J (Li, J.); Wu, J (Wu, J.); Peeters, FM (Peeters, F. M.)

Source: PHYSICAL REVIEW B Volume: 87 Issue: 16 Article Number: 165409 DOI: 10.1103/PhysRevB.87.165409 Published: APR 5 2013

Times Cited in Web of Science: 6

Total Times Cited: 6

Abstract: Typical Raman spectra of transition-metal dichalcogenides (TMDs) display two prominent peaks, E-2g and A(1g), that are well separated from each other. We find that these modes are degenerate in bulk WSe2 yielding one single Raman peak in contrast to other TMDs. As the dimensionality is lowered, the observed peak splits in two. In contrast, our ab initio calculations predict that the degeneracy is retained even for WSe2 monolayers. Interestingly, for minuscule biaxial strain, the degeneracy is preserved, but once the crystal symmetry is broken by a small uniaxial strain, the degeneracy is lifted. Our calculated phonon dispersion for uniaxially strained WSe2 shows a good match to the measured Raman spectrum, which suggests that uniaxial strain exists in WSe2 flakes, possibly induced during the sample preparation and/or as a result of the interaction between WSe2 and the substrate. Furthermore, we find that WSe2 undergoes an indirect-to-direct band-gap transition from bulk to monolayers, which is ubiquitous for semiconducting TMDs. These results not only allow us to understand the vibrational and electronic properties of WSe2, but also point to effects of the interaction between the monolayer TMDs and the substrate on the vibrational and electronic properties. DOI: 10.1103/PhysRevB.87.165409

Addresses: [Sahin, H.; Horzum, S.; Peeters, F. M.] Univ Antwerp, Dept Phys, B-2020 Antwerp, Belgium.

[Tongay, S.; Fan, W.; Zhou, J.; Wu, J.] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA.

[Horzum, S.] Ankara Univ, Dept Engn Phys, Fac Engn, TR-06100 Ankara, Turkey.

[Li, J.] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wu, J.] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.

Reprint Address: Sahin, H (reprint author), Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium.

E-mail Addresses: hasan.sahin@ua.ac.be; tongay@berkeley.edu

ISSN: 1098-0121

Record 324 of 495

Title: Optical anisotropy and blue-shift phenomenon in tetragonal BiFeO3

Author(s): Dong, HF (Dong, Huafeng); Liu, HF (Liu, Hongfei); Wang, SY (Wang, Shanying)

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 46 Issue: 13 Article Number: 135102 DOI: 10.1088/0022-3727/46/13/135102 Published: APR 3 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We study the uniaxial optical anisotropy of tetragonal BiFeO3 using first-principles density-functional theory and the Heyd-Scuseria-Ernzerhof hybrid functional in the near infrared to near ultraviolet range, and compare the results with related experiment and theory. It is found that the dielectric function is overall blue shifted compared with that of rhombohedral BiFeO3, and the charge transfer excitations are similar to 0.3 eV higher than those of the rhombohedral counterpart, which is caused by the symmetry breaking of FeO6 octahedral. Furthermore, it is a negative uniaxial crystal and shows significant birefringence.

Addresses: [Dong, Huafeng; Wang, Shanying] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

[Dong, Huafeng; Liu, Hongfei] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Dong, HF (reprint author), Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

E-mail Addresses: hfdong@semi.ac.cn; sywang@mail.tsinghua.edu.cn

ISSN: 0022-3727
--------------------------------------------------------------------------------

Record 325 of 495

Title: Influence of growth conditions on the lateral grain size of AIN film grown by metal-organic chemical vapor deposition

Author(s): Wu, LL (Wu Liang-Liang); Zhao, DG (Zhao De-Gang); Li, L (Li Liang); Le, LC (Le Ling-Cong); Chen, P (Chen Ping); Liu, ZS (Liu Zong-Shun); Jiang, DS (Jiang De-Sheng)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 8 Article Number: 086102 DOI: 10.7498/aps.62.086102 Published: APR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this paper, we investigate the effect of growth conditions on the quality of AN film grown by metal-organic chemical vapor deposition. We test and analyze the influence of different growth conditions, such as nitridation time, growth time of AN buffer layer and the flow rate of carrier gas, on the lateral grain size of AN film. It is found that the redution of nitridation time, the increase of growth time of AN buffer layer, and the reduction of the flow rate of carrier gas can enhance the lateral growth of AN film and coalescence of islands and increase the lateral grain size of AN film. So the quality of AN film is improved.

Addresses: [Wu Liang-Liang; Zhao De-Gang; Li Liang; Le Ling-Cong; Chen Ping; Liu Zong-Shun; Jiang De-Sheng] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Zhao, DG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: dgzhao@red.semi.ac.cn

ISSN: 1000-3290

Record 326 of 495

Title: A Chirped Subwavelength Grating With Both Reflection and Transmission Focusing

Author(s): Lv, XM (Lv, Xiaomin); Qiu, WB (Qiu, Weibin); Wang, JX (Wang, Jia-Xian); Ma, YH (Ma, Yuhui); Zhao, J (Zhao, Jing); Li, MK (Li, Mengke); Yu, HY (Yu, Hongyan); Pan, JQ (Pan, Jiaoqing)

Source: IEEE PHOTONICS JOURNAL Volume: 5 Issue: 2 Article Number: 2200907 DOI: 10.1109/JPHOT.2013.2252333 Published: APR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A planar lens composed of a chirped subwavelength grating (CSG) structure with high numerical aperture (NA) was designed and analyzed in this paper. The reflectivity, transmission, and phase were calibrated as a function of the grating dimension using rigorous coupled wave analysis, while the focusing properties were numerically simulated by finite-element method. The designed CSG focused the reflected and transmitted waves that have approximately the same power ratios simultaneously. Numerical aperture values of the planar lens as high as 0.91 and 0.92 were obtained for normal incidence of TM and TE polarization light, respectively.

Addresses: [Lv, Xiaomin; Qiu, Weibin; Wang, Jia-Xian; Ma, Yuhui; Zhao, Jing] Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021, Peoples R China.

[Li, Mengke; Yu, Hongyan; Pan, Jiaoqing] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Qiu, WB (reprint author), Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021, Peoples R China.

E-mail Addresses: wbqiu@hqu.edu.cn; wangjx@hqu.edu.cn

ISSN: 1943-0655
--------------------------------------------------------------------------------

Record 327 of 495

Title: Photonic Generation of Chirp-Free Phase-Coded Microwave With Accurate pi Phase Shift and Large Continuous Operating Bandwidth

Author(s): Wang, H (Wang, Hui); Zheng, JY (Zheng, Jianyu); Wang, LX (Wang, Lixian); Liu, JG (Liu, Jianguo); Xie, L (Xie, Liang); Zhu, NH (Zhu, Ninghua)

Source: IEEE PHOTONICS JOURNAL Volume: 5 Issue: 2 Article Number: 5500306 DOI: 10.1109/JPHOT.2013.2248706 Published: APR 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: This paper presents a novel approach to generate a binary phase-coded microwave signal with accurate pi phase shift and large continuous operating bandwidth. In the system, the phase-coding modulation with an accurate pi phase shift has been realized by the joint use of two cascaded polarization modulators (PolMs). The generation of phase-coded microwave signals at 10 GHz, 18 GHz, and 28 GHz has been experimentally demonstrated, which verifies the proposed technique positively. Since there is no use of any optical filters and fiber Bragg gratings (FBGs), this system is rather simple and free from the optical bandwidth limitation problem with operating in a continuous microwave bandwidth as large as limited only by the PolMs (from dc to 40 GHz).

Addresses: [Wang, Hui; Zheng, Jianyu; Wang, Lixian; Liu, Jianguo; Xie, Liang; Zhu, Ninghua] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Xie, L (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: xiel@semi.ac.cn

ISSN: 1943-0655

Record 328 of 495

Title: Enhanced performance of GaN-based light-emitting diodes with graphene/Ag nanowires hybrid films

Author(s): Li, Z (Li, Zhi); Kang, JJ (Kang, Junjie); Liu, ZQ (Liu, Zhiqiang); Du, CX (Du, Chengxiao); Lee, X (Lee, Xiao); Li, X (Li, Xiao); Wang, LC (Wang, Liancheng); Yi, XY (Yi, Xiaoyan); Zhu, HW (Zhu, Hongwei); Wang, GH (Wang, Guohong)

Source: AIP ADVANCES Volume: 3 Issue: 4 Article Number: 042134 DOI: 10.1063/1.4803647 Published: APR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Incorporating Ag nanowires with graphene resulted in improved electrical conductivity and enhanced contact properties between graphene and p-GaN. The graphene/AgNWs hybrid films exhibited high transmittance and lower sheet resistance compared to bare graphene. The specific contact resistance between graphene and p-GaN reduced nearly an order of magnitude with the introduction of AgNWs. As a result, light emitting diodes based on the hybrid films showed 44% lower forward voltage and 2-fold higher light output power. The enhanced performance was attributed to the bridging by AgNWs of cracks, grain boundaries in graphene and the reduction of Schottky barrier height at graphene/p-GaN interface. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4803647]

Addresses: [Li, Zhi; Kang, Junjie; Liu, Zhiqiang; Du, Chengxiao; Wang, Liancheng; Yi, Xiaoyan; Wang, Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

[Lee, Xiao; Li, Xiao; Zhu, Hongwei] Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China.

[Lee, Xiao; Zhu, Hongwei] Tsinghua Univ, Ctr Nano & Micro Mech, Beijing 100084, Peoples R China.

Reprint Address: Li, Z (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: lzq@semi.ac.cn; hongweizhu@tsinghua.edu.cn

ISSN: 2158-3226

Record 329 of 495

Title: X-ray probe of GaN thin films grown on InGaN compliant substrates

Author(s): Xu, XQ (Xu, Xiaoqing); Li, Y (Li, Yang); Liu, JM (Liu, Jianming); Wei, HY (Wei, Hongyuan); Liu, XL (Liu, Xianglin); Yang, SY (Yang, Shaoyan); Wang, ZG (Wang, Zhanguo); Wang, HH (Wang, Huanhua)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 13 Article Number: 132104 DOI: 10.1063/1.4799279 Published: APR 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: GaN thin films grown on InGaN compliant substrates were characterized by several X-ray technologies: X-ray reciprocal space mapping (RSM), grazing incidence X-ray diffraction (GIXRD), and X-ray photoemission spectrum (XPS). Narrow Lorentz broadening and stress free state were observed for GaN grown on InGaN compliant substrate, while mosaic structure and large tensile stress were observed at the presence of residual indium atoms. RSM disclosed the mosaicity, and the GIXRD was conducted to investigate the depth dependences of crystal quality and strain states. XPS depth profile of indium contents indicated that residual indium atoms deteriorated the crystal quality of GaN not only by producing lattice mismatch at the interface of InGaN and GaN but also by diffusing into GaN overlayers. Accordingly, two solutions were proposed to improve the efficiency of self-patterned lateral epitaxial overgrowth method. This research goes a further step in resolving the urgent substrate problem in GaN fabrication. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799279]

Addresses: [Xu, Xiaoqing; Liu, Jianming; Wei, Hongyuan; Liu, Xianglin; Yang, Shaoyan; Wang, Zhanguo] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Li, Yang] Univ Sci & Technol Beijing, Dept Mat Sci, Beijing 100083, Peoples R China.

[Wang, Huanhua] Chinese Acad Sci, Beijing Synchrotron Radiat Facil, Inst High Energy Phys, Beijing 100049, Peoples R China.

Reprint Address: Xu, XQ (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: xxq@semi.ac.cn; xlliu@semi.ac.cn; sh-yyang@semi.ac.cn

ISSN: 0003-6951

Record 330 of 495

Title: Tailoring magnetism of multifunctional MnxGa films with giant perpendicular anisotropy

Author(s): Zhu, LJ (Zhu, L. J.); Pan, D (Pan, D.); Nie, SH (Nie, S. H.); Lu, J (Lu, J.); Zhao, JH (Zhao, J. H.)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 13 Article Number: 132403 DOI: 10.1063/1.4799344 Published: APR 1 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: We report wide-range composition and annealing effects on magnetic properties of MnxGa films grown on GaAs (001) by molecular-beam epitaxy. We obtained single-crystalline MnxGa films in a surprisingly wide composition range from x = 0.76 to 2.6. We show that the magnetism could be effectively tailored by adjusting composition and annealing. Especially, when 0.76 <= x <= 1.75, MnxGa films simultaneously show magnetization from 130 to 450 emu/cc, perpendicular anisotropy from 8.6 to 21 Merg/cc, intrinsic coercivity from 4.38 to 20.1 kOe, normal coercivity to 3.6 kOe, energy product up to 3.4 MGOe, and thermal-stability up to at least 350 degrees C in contact with GaAs. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799344]

Addresses: [Zhu, L. J.; Pan, D.; Nie, S. H.; Lu, J.; Zhao, J. H.] Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhao, JH (reprint author), Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jhzhao@red.semi.ac.cn

ISSN: 0003-6951

Record 331 of 495

Title: Enhanced Light Emission of Light-Emitting Diodes with Silicon Oxide Nanobowls Photonic Crystal without Electrical Performance Damages

Author(s): Du, CX (Du, Chengxiao); Geng, C (Geng, Chong); Zheng, HY (Zheng, Haiyang); Wei, TB (Wei, Tongbo); Chen, Y (Chen, Yu); Zhang, YY (Zhang, Yiyun); Wu, K (Wu, Kui); Yan, QF (Yan, Qingfeng); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin)

Source: JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 52 Issue: 4 Article Number: 040207 DOI: 10.7567/JJAP.52.040207 Published: APR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Unencapsulated GaN-based light-emitting diodes (LEDs) with two-dimensional (2D) hexagonal closely-packed silicon oxide nanobowls photonic crystal (PhC) on the indium tin oxide (ITO) transparent conductive layer were fabricated by using polystyrene spheres and sol-gel process. Compared to conventional LEDs with planar ITO layers, the light output power of 600-nm-lattice PhC LEDs was improved by 25.6% at an injection current of 20 mA. Furthermore, electrical performance of the PhC LEDs was damage-free via this chemical technique. (C) 2013 The Japan Society of Applied Physics

Addresses: [Du, Chengxiao; Zheng, Haiyang; Wei, Tongbo; Chen, Yu; Zhang, Yiyun; Wu, Kui; Wang, Junxi; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

[Geng, Chong; Yan, Qingfeng] Tsinghua Univ, Dept Chem, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.

[Chen, Yu] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.

Reprint Address: Du, CX (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: tbwei@semi.ac.cn; chenyu@semi.ac.cn

ISSN: 0021-4922

Record 332 of 495

Title: Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate

Author(s): Liu, Z (Liu Zhi); Li, YM (Li Ya-Ming); Xue, CL (Xue Chun-Lai); Cheng, BW (Cheng Bu-Wen); Wang, QM (Wang Qi-Ming)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 7 Article Number: 076108 DOI: 10.7498/aps.62.076108 Published: APR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Four-bilayer Ge quantum dots (QDs) with Si spacers were epitaxially grown on Si(001) substrates by means of ultrahigh vacuum chemical vapor deposition. In two samples, Ge QDs were in situ doped with phosphorus or boron, separately. Surface morphology and room temperature photoluminescence (PL) of multilayer Ge/Si QDs wer studied. Compared with the undoped Ge QDs, phosphorus-doping did not change the morphology of Ge QDs, enhanced PL wer observed from the phosphorus-doped Ge QDs. But reduction of Ge QDs density and PL intensity wer observed from the boron-doped Ge QDs. The intensity enhancement of PL could be attributed to the sufficient supply of electrons in Ge QDs for radiative recombination.

Addresses: [Liu Zhi; Li Ya-Ming; Xue Chun-Lai; Cheng Bu-Wen; Wang Qi-Ming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Cheng, BW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: cbw@red.semi.ac.cn

ISSN: 1000-3290

Record 333 of 495

Title: The generation of MHz isolated XUV attosecond pulses by plasmonic enhancement in a tailored symmetric Ag cross nanoantenna with a few-cycle laser

Author(s): Yang, YY (Yang, Ying-Ying); Li, QG (Li, Qian-Guang); Yu, HJ (Yu, Hai-Juan); Lin, XC (Lin, Xue-Chun)

Source: LASER PHYSICS Volume: 23 Issue: 4 Article Number: 045301 DOI: 10.1088/1054-660X/23/4/045301 Published: APR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Within a few-cycle laser, the generation of MHz isolated extreme ultraviolet (XUV) attosecond pulses via nanoplasmonic field enhancement in silver nanostructures is theoretically investigated. Numerical techniques are employed to optimize nanoantennas and attain plasmonic field enhancement factors up to 270. In a volume of 15 x 15 x 30 nm(-3) in the nanoantenna, the intensity could be enhanced to 10(14) W cm(-2) for high harmonic generation (HHG). Optimal conditions for the production of MHz isolated attosecond pulses of 140 attosecond duration via HHG have been identified. These findings open up the possibility for the development of a compact source of ultrashort XUV pulses with MHz repetition rates. Moreover, asymmetric cross HHG is proposed to control the polarizations, select the wavelengths by varying the ratio of silver nanoantennas and generate XUV pulses in both polarized directions.

Addresses: [Yang, Ying-Ying; Yu, Hai-Juan; Lin, Xue-Chun] Chinese Acad Sci, Inst Semicond, Lab Solid State Laser Sources, Beijing 100083, Peoples R China.

[Li, Qian-Guang] Hubei Engn Univ, Dept Phys, Xiaogan 432000, Peoples R China.

Reprint Address: Yang, YY (reprint author), Chinese Acad Sci, Inst Semicond, Lab Solid State Laser Sources, Beijing 100083, Peoples R China.

E-mail Addresses: yangyy@semi.ac.cn; xclin@semi.ac.cn

ISSN: 1054-660X
--------------------------------------------------------------------------------

Record 334 of 495

Title: Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene-Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources

Author(s): Liu, XF (Liu, Xingfang); Sun, GS (Sun, Guosheng); Liu, B (Liu, Bin); Yan, GG (Yan, Guoguo); Guan, M (Guan, Min); Zhang, Y (Zhang, Yang); Zhang, F (Zhang, Feng); Chen, Y (Chen, Yu); Dong, L (Dong, Lin); Zheng, L (Zheng, Liu); Liu, SB (Liu, Shengbei); Tian, LX (Tian, Lixin); Wang, L (Wang, Lei); Zhao, WS (Zhao, Wanshun); Zeng, YP (Zeng, Yiping)

Source: MATERIALS Volume: 6 Issue: 4 Pages: 1543-1553 DOI: 10.3390/ma6041543 Published: APR 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: We report a new method for growing hexagonal columnar nanograin structured silicon carbide (SiC) thin films on silicon substrates by using graphene-graphitic carbon nanoflakes (GGNs) templates from solid carbon sources. The growth was carried out in a conventional low pressure chemical vapor deposition system (LPCVD). The GGNs are small plates with lateral sizes of around 100 nm and overlap each other, and are made up of nanosized multilayer graphene and graphitic carbon matrix (GCM). Long and straight SiC nanograins with hexagonal shapes, and with lateral sizes of around 200-400 nm are synthesized on the GGNs, which form compact SiC thin films.