Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Addresses: [Li Liang; Zhao De-Gang; Jiang De-Sheng; Liu Zong-Shun; Chen Ping; Wu Liang-Liang; Le Ling-Cong; Yang Hui] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Wang Hui; Yang Hui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

Reprint Address: Zhao, DG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: dgzhao@semi.ac.cn

ISSN: 0256-307X
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Record 424 of 495

Title: Two New Methods to Improve the Lithography Precision for SU-8 Photoresist on Glass Substrate

Author(s): Mao, X (Mao, Xu); Yang, JL (Yang, Jinling); Ji, A (Ji, An); Yang, FH (Yang, Fuhua)

Source: JOURNAL OF MICROELECTROMECHANICAL SYSTEMS Volume: 22 Issue: 1 Pages: 124-130 DOI: 10.1109/JMEMS.2012.2219295 Published: FEB 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: This paper introduces two novel approaches to effectively eliminate the influence of scattering light from the wafer chuck and enhance the lithography precision of SU-8 photoresist on glass substrate. The first method is based on the fact that Si wafer can partially reflect ultraviolet (UV) light, and the second one employs materials that have low optical transparency and can achieve complete absorption of the near-UV light penetrating through the SU-8 photoresist and the glass substrate. The SU-8 structures produced by these two methods have much better profiles than those fabricated by the conventional process, and the linewidth deviation is smaller than 1 mu m. The two routines have advantages of simplicity and low cost, therefore are applicable to batch fabrication, and can significantly enhance the performance of microelectromechanical systems devices. These two methods were adopted to perform SU-8-based low-temperature bonding at wafer level and with high precision. The bonding shear strengths reach 2-26 MPa when the bonding temperature varied from 60 degrees C to 140 degrees C.

Addresses: [Mao, Xu; Yang, Jinling; Ji, An] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Mao, Xu; Yang, Jinling; Ji, An; Yang, Fuhua] State Key Lab Transducer Technol, Shanghai 200050, Peoples R China.

Reprint Address: Mao, X (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: maoxu@semi.ac.cn; jlyang@semi.ac.cn; jian@semi.ac.cn; fhyang@semi.ac.cn

ISSN: 1057-7157
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Record 425 of 495

Title: Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure

Author(s): Yu, GH (Yu, Guohao); Wang, Y (Wang, Yue); Cai, Y (Cai, Yong); Dong, ZH (Dong, Zhihua); Zeng, CH (Zeng, Chunhong); Zhang, BS (Zhang, Baoshun)

Source: IEEE ELECTRON DEVICE LETTERS Volume: 34 Issue: 2 Pages: 217-219 DOI: 10.1109/LED.2012.2235405 Published: FEB 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: Anovel double-gate AlGaN/GaN HEMT, in which an additional top-gate covers the adjacent regions of a normal gate, was proposed and fabricated for the first time to compare the dynamic characteristics of AlGaN/GaN HEMTs with a source field plate (SFP) and a gate field plate (GFP). During the dynamic characterization, the device was configured in two operation modes: One is the SFP mode with the top gate biased at 0 V, and the other is the GFP mode applying the gate pulse signal on the top gate at the same time. Compared with an AlGaN/GaN HEMT without field plates, both GFP and SFP much improve the dynamic performances. Compared with the SFP, the GFP shows better dynamic performances with a similar to 34% reduction of switch-on delay time and similar to 6% reduction of dynamic ON-state resistance. Studying the dynamic characteristics and applying negative voltage on the top gate during the OFF state, the mechanism differences between the GFP and the SFP are discussed in detail.

Addresses: [Yu, Guohao; Wang, Yue; Cai, Yong; Dong, Zhihua; Zeng, Chunhong; Zhang, Baoshun] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

[Yu, Guohao; Wang, Yue] Univ Chinese Acad Sci, Beijing 100049, Peoples R China.

[Yu, Guohao] Chinese Acad Sci, Inst Semicond, Beijing 10008, Peoples R China.

Reprint Address: Yu, GH (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

E-mail Addresses: ycai2008@sinano.ac.cn

ISSN: 0741-3106

Record 426 of 495

Title: CMOS-Compatible Vertical Grating Coupler With Quasi Mach-Zehnder Characteristics

Author(s): Zhang, ZY (Zhang, Zanyun); Zhang, Z (Zhang, Zan); Huang, BJ (Huang, Beiju); Cheng, CT (Cheng, Chuantong); Chen, HD (Chen, Hongda)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 3 Pages: 224-227 DOI: 10.1109/LPT.2012.2234099 Published: FEB 1 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: A vertical grating coupler on silicon-on-insulator substrates has been designed and demonstrated. The light from a vertical fiber can be coupled in and split equally into two arms with the fiber placed in the grating center. An optical combiner is used to collect the transmission from the two arms. The measured peak coupling efficiency is 37%. Our device can also function like a Mach-Zehnder interferometer. In a device with an arm difference of 30 mu m, the normalized transmission spectra of 20-nm free spectral range and more than 12-dB extinction ratio at 1567 nm are obtained.

Addresses: [Zhang, Zanyun; Zhang, Zan; Huang, Beiju; Cheng, Chuantong; Chen, Hongda] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhang, ZY (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: zhangzanyun@semi.ac.cn; Zhangzan@semi.ac.cn; bjhuang@semi.ac.cn; chengchuantong@semi.ac.cn; hdchen@semi.ac.cn

ISSN: 1041-1135

Record 427 of 495

Title: Various Correlations in a Two-Qubit Heisenberg XXZ Spin System Both in Thermal Equilibrium and Under the Intrinsic Decoherence

Author(s): Cai, JT (Cai, Jiang-Tao); Abliz, A (Abliz, Ahmad); Li, SS (Li, Shu-Shen)

Source: INTERNATIONAL JOURNAL OF THEORETICAL PHYSICS Volume: 52 Issue: 2 Pages: 576-588 DOI: 10.1007/s10773-012-1362-9 Published: FEB 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this paper we discuss various correlations measured by the concurrence (C), classical correlation (CC), quantum discord (QD), and geometric measure of discord (GMD) in a two-qubit Heisenberg XXZ spin system in the presence of external magnetic field and Dzyaloshinskii-Moriya (DM) anisotropic antisymmetric interaction. Based on the analytically derived expressions for the correlations for the cases of thermal equilibrium and the inclusion of intrinsic decoherence, we discuss and compare the effects of various system parameters on the correlations in both cases. We also found that there is not a definite ordering of these quantities in thermal equilibrium, whereas there is a descending order of the CC, C, GMD and QD under the intrinsic decoherence with a nonnull B when the initial state is vertical bar Psi(2) (0)> = 1/root 2(vertical bar 00 > + vertical bar 11 >).

Addresses: [Cai, Jiang-Tao; Li, Shu-Shen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Abliz, Ahmad] Xinjiang Normal Univ, Sch Phys & Elect Engn, Urumqi 830054, Peoples R China.

Reprint Address: Cai, JT (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jtcai@semi.ac.cn

ISSN: 0020-7748
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Record 428 of 495

Title: Anisotropic characteristics and morphological control of silicon nanowires fabricated by metal-assisted chemical etching

Author(s): Liu, K (Liu, Kong); Qu, SC (Qu, Shengchun); Zhang, XH (Zhang, Xinhui); Wang, ZG (Wang, Zhanguo)

Source: JOURNAL OF MATERIALS SCIENCE Volume: 48 Issue: 4 Pages: 1755-1762 DOI: 10.1007/s10853-012-6936-7 Published: FEB 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: Low-cost fabrication methods enabling the morphological control of silicon nanowires are of great importance in many device application fields. A top-down fabrication method, metal-assisted chemical etching, is proved to be a feasible solution. In this paper, some novel approaches based on metal-assisted chemical etching, alkaline solution etching, and electrochemical anodic etching are presented for fabricating micro-and nano-structures, which reveal the anisotropic characteristics of metal-assisted chemical etching in silicon. A new model is proposed to explain the motility behavior of Ag particles in metal-assisted chemical etching of silicon. It is shown that Ag particle forms a self-electrophoresis unit and migrates into Si substrate along [100] direction independently. Diameter and length control of silicon nanowires are achieved by varying Ag deposition and etching durations of metal-assisted chemical etching, respectively, which provide a facilitation to achieve high-aspect-ratio silicon nanowires at room temperature in a short period. These results show a potential simple method to microstructure silicon for devices application, such as solar cells and sensors.

Addresses: [Liu, Kong; Qu, Shengchun; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Zhang, Xinhui] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Qu, SC (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: liukong@semi.ac.cn; qsc@semi.ac.cn

ISSN: 0022-2461
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Record 429 of 495

Title: Long-range-ordered Ag nanodot arrays grown on GaAs substrate using nanoporous alumina mask

Author(s): Liu, W (Liu, Wen); Wang, XD (Wang, Xiaodong); Xu, R (Xu, Rui); Wang, XF (Wang, Xiaofeng); Cheng, KF (Cheng, Kaifang); Ma, HL (Ma, Huili); Yang, FH (Yang, Fuhua); Li, JM (Li, Jinmin)

Source: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Volume: 16 Issue: 1 Pages: 160-164 DOI: 10.1016/j.mssp.2012.05.008 Published: FEB 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: With more and more attention given to the plasmonic nanostructures enhancing light trapping of solar cells, the fabrication of metal nanostructures becomes more and more important. In this work, we fabricated porous anodic alumina on SiO2/GaAs substrate and obtained periodic Ag nanodots with hemispherical shape by electron beam evaporation. During the experiments, it was found that the properties of barrier layers of porous anodic alumina fabricated on SiO2/GaAs and SiO2/Si substrates after pore-widening are different. The through-hole porous anodic alumina film on SiO2/GaAs substrate cannot be obtained after a long pore-widening process. The additional Ar ion bombardment against the samples was needed in our experiments to get the through-hole porous anodic alumina films on SiO2/GaAs substrate. (C) 2012 Elsevier Ltd. All rights reserved.

Addresses: [Liu, Wen; Wang, Xiaodong; Xu, Rui; Wang, Xiaofeng; Cheng, Kaifang; Ma, Huili; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

[Yang, Fuhua] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Li, Jinmin] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Wang, XD (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

E-mail Addresses: liuwen519@semi.ac.cn; xdwang@semi.ac.cn; xurui@semi.ac.cn; wangxiaofeng@semi.ac.cn; chengkaifang@semi.ac.cn; mahuili@semi.ac.cn; fhyang@semi.ac.cn; jmli@semi.ac.cn

ISSN: 1369-8001

Record 430 of 495

Title: DESIGN OF NOVEL COMPOSITE BEAM SPLITTER WITH DIRECTIONAL COUPLERS AND RING RESONATORS USING PHOTONIC CRYSTAL

Author(s): Liao, QH (Liao, Qinghua); Guo, H (Guo, Hao); Yu, TB (Yu, Tianbao); Huang, YZ (Huang, Yongzhen)

Source: MODERN PHYSICS LETTERS B Volume: 27 Issue: 3 Article Number: 1350019 DOI: 10.1142/S021798491350019X Published: JAN 30 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We propose and analyze a novel multiway high efficiency composite beam splitter based on propagation properties of the light waves in directional coupler (DC) and ring resonator. The spectral transmittance and splitting properties of the beam splitter have been numerically simulated and analyzed using the plane wave expansion (PWE) method and finite difference time domain (FDTD) method. By simply adjusting the symmetrical coupling rods in the ring resonators, inducing the redistribution of the power of the optical field, equipartition or free distribution of the light field energy can be achieved. It was shown that the novel composite beam splitter has a large separating angle, a high beam transmittance, and high flexibility. Furthermore, this beam splitter can be easily extended to the structure with more light output channels. These features of the proposed composite beam splitter make it a promising candidate in optical communication applications.

Addresses: [Liao, Qinghua; Guo, Hao; Yu, Tianbao] Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R China.

[Huang, Yongzhen] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Liao, QH (reprint author), Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R China.

E-mail Addresses: lqhua@ncu.edu.cn

ISSN: 0217-9849
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Record 431 of 495

Title: High-Q modes in defected microcircular resonator confined by metal layer for unidirectional emission

Author(s): Yao, QF (Yao, Qi-Feng); Huang, YZ (Huang, Yong-Zhen); Lin, JD (Lin, Jian-Dong); Lv, XM (Lv, Xiao-Meng); Zou, LX (Zou, Ling-Xiu); Long, H (Long, Heng); Yang, YD (Yang, Yue-De); Xiao, JL (Xiao, Jin-Long)

Source: OPTICS EXPRESS Volume: 21 Issue: 2 Pages: 2165-2170 Published: JAN 28 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Defected circular resonators laterally confined by a metal layer with a flat side as an emitting window are numerically investigated based on the boundary element method for realizing unidirectional emission microlasers. The results indicate that Fabry-Perot (FP) modes become high Q confined modes in the defected circular resonator with a metallic layer. The mode coupling between the FP mode and chaotic-like mode can result in high Q confined mode for unidirectional emission with a narrow far field pattern. (C) 2013 Optical Society of America

Addresses: [Yao, Qi-Feng; Huang, Yong-Zhen; Lin, Jian-Dong; Lv, Xiao-Meng; Zou, Ling-Xiu; Long, Heng; Yang, Yue-De; Xiao, Jin-Long] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Yao, QF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yzhuang@semi.ac.cn

ISSN: 1094-4087

Record 432 of 495

Title: High-harmonic and single attosecond pulse generation using plasmonic field enhancement in ordered arrays of gold nanoparticles with chirped laser pulses

Author(s): Yang, YY (Yang, Ying-Ying); Scrinzi, A (Scrinzi, Armin); Husakou, A (Husakou, Anton); Li, QG (Li, Qian-Guang); Stebbings, SL (Stebbings, Sarah L.); Sussmann, F (Suessmann, Frederik); Yu, HJ (Yu, Hai-Juan); Kim, S (Kim, Seungchul); Ruhl, E (Ruehl, Eckart); Herrmann, J (Herrmann, Joachim); Lin, XC (Lin, Xue-Chun); Kling, MF (Kling, Matthias F.)

Source: OPTICS EXPRESS Volume: 21 Issue: 2 Pages: 2195-2205 Published: JAN 28 2013

Times Cited in Web of Science: 6

Total Times Cited: 6

Abstract: Coherent XUV sources, which may operate at MHz repetition rate, could find applications in high-precision spectroscopy and for spatio-time-resolved measurements of collective electron dynamics on nanostructured surfaces. We theoretically investigate utilizing the enhanced plasmonic fields in an ordered array of gold nanoparticles for the generation of high-harmonic, extreme-ultraviolet (XUV) radiation. By optimization of the chirp of ultrashort laser pulses incident on the array, our simulations indicate a potential route towards the temporal shaping of the plasmonic near-field and, in turn, the generation of single attosecond pulses. The inherent effects of inhomogeneity of the local fields on the high-harmonic generation are analyzed and discussed. While taking the inhomogeneity into account does not affect the optimal chirp for the generation of a single attosecond pulse, the cut-off energy of the high-harmonic spectrum is enhanced by about a factor of two. (C) 2013 Optical Society of America

Addresses: [Yang, Ying-Ying; Yu, Hai-Juan; Lin, Xue-Chun] Chinese Acad Sci, Inst Semicond, Lab Solid State Laser Sources, Beijing 100083, Peoples R China.

[Scrinzi, Armin] Univ Munich, D-80333 Munich, Germany.

[Husakou, Anton; Herrmann, Joachim] Max Born Inst Nonlinear Opt & Short Pulse Spect, D-12489 Berlin, Germany.

[Li, Qian-Guang] Univ Xiaogan, Hubei Engn Univ, Dept Phys, Xiaogan 432000, Peoples R China.

[Stebbings, Sarah L.; Suessmann, Frederik; Kling, Matthias F.] Max Planck Inst Quantum Opt, D-85748 Garching, Germany.

[Kim, Seungchul] POSTECH, Max Planck Ctr Attosecond Sci MPC AS, Pohang 790784, Kyungbuk, South Korea.

[Ruehl, Eckart] Free Univ Berlin, Inst Chem & Biochem Phys & Theoret Chem, D-14195 Berlin, Germany.

[Kling, Matthias F.] Kansas State Univ, Dept Phys, JR Macdonald Lab, Manhattan, KS 66506 USA.

Reprint Address: Yang, YY (reprint author), Chinese Acad Sci, Inst Semicond, Lab Solid State Laser Sources, Beijing 100083, Peoples R China.

E-mail Addresses: yangyy@semi.ac.cn; kling@phys.ksu.edu

ISSN: 1094-4087
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Record 433 of 495

Title: Electronic structure and optical properties of InAs/GaSb/AlSb/GaSb superlattice

Author(s): Lang, XL (Lang, Xiao-Li); Xia, JB (Xia, Jian-Bai)

Source: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 4 Article Number: 043715 DOI: 10.1063/1.4780704 Published: JAN 28 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The electronic structure and optical properties of InAs/GaSb/AlSb/GaSb superlattice (M-structure) are investigated in the framework of eight-band effective-mass theory, with the interface potential considered. The calculated energy gaps agree excellently with the experimental results. Via calculations, we find that the electronic structure of M-structure strongly depends on the geometrical structure of superlattice. The electron effective mass increases notably with the thickness of GaSb and AlSb layers, and AlSb layer is more favorable to obtain large electron effective mass than GaSb layer. Increased thickness of AlSb layer also leads to larger variation range of valence band maximum (VBM) and so M-structure has more tunable VBM than InAs/GaSb superlattice. Also the VBM of M-structure rises considerably with the increment of GaSb layer thickness and is almost independent of InAs layer thickness. We further find that M-structure has no remarkable superior optical absorption coefficient over InAs/GaSb superlattice. However, with larger electron effective mass and more tunable valence band maximum compared with InAs/GaSb superlattice, M-structure can be used as barrier in InAs/GaSb superlattice infrared detector to reduce the dark current. And the quantum efficiency of infrared photodiodes will not depend on the bias voltage when the M-structure is appropriately doped and carefully designed based on the dependence of its electronic structure on the superlattice geometry. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4780704]

Addresses: [Lang, Xiao-Li; Xia, Jian-Bai] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Lang, XL (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: langxiaoli@semi.ac.cn; xiajb@semi.ac.cn

ISSN: 0021-8979

Record 434 of 495

Title: Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC

Author(s): Zhang, F (Zhang, Feng); Sun, GS (Sun, Guosheng); Zheng, L (Zheng, Liu); Liu, SB (Liu, Shengbei); Liu, B (Liu, Bin); Dong, L (Dong, Lin); Wang, L (Wang, Lei); Zhao, WS (Zhao, Wanshun); Liu, XF (Liu, Xingfang); Yan, GG (Yan, Guoguo); Tian, LX (Tian, Lixin); Zeng, YP (Zeng, Yiping)

Source: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 4 Article Number: 044112 DOI: 10.1063/1.4789380 Published: JAN 28 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Al2O3 films were prepared by atomic layer deposition using trimethylaluminum and H2O at 250 degrees C on 4H-SiC substrates and annealed at 1000 degrees C in N-2. The as-deposited and annealed Al2O3 films were measured and analyzed near the Al2O3/SiC interfaces by using an X-ray photoelectron spectroscopy (XPS) with etching processing. The XPS results showed that as-deposited Al2O3 films were O-rich and converted to anhydride Al2O3 films after annealed at 1000 degrees C in N-2. Si suboxides were found both at as-deposited and annealed Al2O3/SiC interfaces. Energy band shift between Al2O3 and 4H-SiC was found after annealing. The conduction band offsets of as-grown and annealed Al2O3/SiC were 1.90 and 1.53 eV, respectively. These results demonstrated that Al2O3 can be a good candidate to be applied in SiC metal-oxide-semiconductor devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789380]

Addresses: [Zhang, Feng; Sun, Guosheng; Zeng, Yiping] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Zhang, Feng; Sun, Guosheng; Zheng, Liu; Liu, Shengbei; Liu, Bin; Dong, Lin; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping] Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Zhang, F (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.