Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Addresses: [Liu, Xingfang; Sun, Guosheng; Liu, Bin; Yan, Guoguo; Guan, Min; Zhang, Yang; Zhang, Feng; Dong, Lin; Zheng, Liu; Liu, Shengbei; Tian, Lixin; Wang, Lei; Zhao, Wanshun; Zeng, Yiping] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Chen, Yu; Zeng, Yiping] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

Reprint Address: Liu, XF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: liuxf@mail.semi.ac.cn; gshsun@red.semi.ac.cn; liubin2010@semi.ac.cn; ggyan@semi.ac.cn; guanmin@red.semi.ac.cn; zhang_yang@mail.semi.ac.cn; fzhang@semi.ac.cn; chenyu@semi.ac.cn; donglin09@semi.ac.cn; liuero@semi.ac.cn; liushengbei@semi.ac.cn; tianlixin@semi.ac.cn; wangl@semi.ac.cn; zwshuke@semi.ac.cn; ypzeng@red.semi.ac.cn

ISSN: 1996-1944
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Record 335 of 495

Title: Temperature-dependent emission shift and carrier dynamics in deep ultraviolet AlGaN/AlGaN quantum wells

Author(s): Zeng, JP (Zeng, Jianping); Li, W (Li, Wei); Yan, JC (Yan, Jianchang); Wang, JX (Wang, Junxi); Cong, PP (Cong, Peipei); Li, JM (Li, Jinmin); Wang, WY (Wang, Weiying); Jin, P (Jin, Peng); Wang, ZG (Wang, Zhanguo)

Source: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS Volume: 7 Issue: 4 Pages: 297-300 DOI: 10.1002/pssr.201307004 Published: APR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Radiative and nonradiative processes in deep ultraviolet (DUV) AlGaN/AlGaN multiple quantum wells (MQWs) grown by LP-MOCVD have been studied by means of deep ultraviolet time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy. As the temperature is increased, the peak energy of DUV-AlGaN/AlGaN MQWs PL emission (E-p) exhibits a similarly anti-S-shaped behavior (blueshift - accelerated redshift - decelerated redshift): E-p increases in the temperature range of 5.9-20 K and decreases for 20-300 K, involving an accelerated redshift for 20-150 K and an opposite decelerated redshift for 150-300 K with temperature increase. Especially at high temperature as 300 K, the slope of the E-p redshift tends towards zero. This temperature-induced PL shift is strongly affected by the change in carrier dynamics with increasing temperature. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Addresses: [Zeng, Jianping; Yan, Jianchang; Wang, Junxi; Cong, Peipei; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D Ctr, Beijing 100083, Peoples R China.

[Li, Wei; Wang, Weiying; Jin, Peng; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Zeng, JP (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: zengjp@semi.ac.cn

ISSN: 1862-6254
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Record 336 of 495

Title: Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors

Author(s): Cao, ZF (Cao Zhi-Fang); Lin, ZJ (Lin Zhao-Jun); Lu, YJ (Lu Yuan-Jie); Luan, CB (Luan Chong-Biao); Wang, ZG (Wang Zhan-Guo)

Source: CHINESE PHYSICS B Volume: 22 Issue: 4 Article Number: 047102 DOI: 10.1088/1674-1056/22/4/047102 Published: APR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Rectangular Schottky drain AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate contact areas and conventional AlGaN/AlN/GaN HFETs as control were both fabricated with same size. It was found there is a significant difference between Schottky drain AlGaN/AlN/GaN HFETs and the control group both in drain series resistance and in two-dimensional electron gas (2DEG) electron mobility in the gate-drain channel. We attribute this to the different influence of Ohmic drain contacts and Schottky drain contacts on the strained AlGaN barrier layer. For conventional AlGaN/AlN/GaN HFETs, annealing drain Ohmic contacts gives rise to a strain variation in the AlGaN barrier layer between the gate contacts and the drain contacts, and results in strong polarization Coulomb field scattering in this region. In Schottky drain AlGaN/AlN/GaN HFETs, the strain in the AlGaN barrier layer is distributed more regularly.

Addresses: [Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.

[Wang Zhan-Guo] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Lin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.

E-mail Addresses: linzj@sdu.edu.cn

ISSN: 1674-1056
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Record 337 of 495

Title: Influence of strain and electric field on the properties of silicane

Author(s): Cheng, G (Cheng Gang); Liu, PF (Liu Peng-Fei); Li, ZT (Li Zi-Tao)

Source: CHINESE PHYSICS B Volume: 22 Issue: 4 Article Number: 046201 DOI: 10.1088/1674-1056/22/4/046201 Published: APR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We investigate the influence of strain and electric field on the properties of a silicane sheet. Some elastic parameters of silicane, such as an in-plane stiffness of 52.55 N/m and a Poisson's ratio of 0.24, are obtained by calculating the strain energy. Compared with silicene, silicane is softer because of its relatively weaker Si-Si bonds. The band structure of silicane is tunable by a uniform tensile strain, with the increase of which the band gap decreases monotonously. Moreover, silicane undergoes an indirect-direct gap transition under a small strain, and a semiconductor-metal transition under a large strain. The electric field can change the Si-H bond length of silicane significantly. When a strong field is applied, the H atom at the high potential side becomes desorbed, while the H atom at the low potential side keeps bonded. So an external electric field can help to produce single-side hydrogenated silicene from silicane. We believe this study will be helpful for the application of silicane in the future.

Addresses: [Cheng Gang; Liu Peng-Fei; Li Zi-Tao] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Cheng, G (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: Chenggang@semi.ac.cn

ISSN: 1674-1056

Record 338 of 495

Title: InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration

Author(s): Li, XK (Li Xin-Kun); Jin, P (Jin Peng); Liang, DC (Liang De-Chun); Wu, J (Wu Ju); Wang, ZG (Wang Zhan-Guo)

Source: CHINESE PHYSICS B Volume: 22 Issue: 4 Article Number: 048102 DOI: 10.1088/1674-1056/22/4/048102 Published: APR 2013

Times Cited in Web of Science: 1

Total Times Cited: 2

Abstract: With a chirped InAs/GaAs SML-QD (quantum dot) structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970 nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800 mA, an output power of 18.5 mW, and the single Gaussian-like emission spectrum centered at 972 nm with a full width at half maximum of 18 nm are obtained.

Addresses: [Jin Peng] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Jin, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: pengjin@semi.ac.cn

ISSN: 1674-1056
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Record 339 of 495

Title: Spin-polarized injection into a p-type GaAs layer from a Co2MnAl injector

Author(s): Yuan, SP (Yuan Si-Peng); Shen, C (Shen Chao); Zheng, HZ (Zheng Hou-Zhi); Liu, Q (Liu Qi); Wang, LG (Wang Li-Guo); Meng, KK (Meng Kang-Kang); Zhao, JH (Zhao Jian-Hua)

Source: CHINESE PHYSICS B Volume: 22 Issue: 4 Article Number: 047202 DOI: 10.1088/1674-1056/22/4/047202 Published: APR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Electric luminescence and its circular polarization in a Co2MnAl injector-based light emitting diode (LED) has been detected at the transition of e-A(C)(0), where injected spin-polarized electrons recombine with bound holes at carbon acceptors. A spin polarization degree of 24.6% is obtained at 77 K after spin-polarized electrons traverse a distance of 300 nm before they recombine with holes bound at neutral carbon acceptors in a p(+)-GaAs layer. The large volume of the p(+)-GaAs layer can facilitate the detection of weak electric luminescence (EL) from e-A(C)(0) emission without being quenched at higher bias as in quantum wells. Moreover, unlike the interband electric luminescence in the p(+)-GaAs layer, where the spin polarization of injected electrons is destroyed by a very effective electron-hole exchange scattering (BAP mechanism), the spin polarization of injected electrons seems to survive during their recombination with holes bound at carbon acceptors.

Addresses: [Yuan Si-Peng; Shen Chao; Zheng Hou-Zhi; Liu Qi; Wang Li-Guo; Meng Kang-Kang; Zhao Jian-Hua] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Zheng, HZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: hzzheng@red.semi.ac.cn

ISSN: 1674-1056

Record 340 of 495

Title: A High Sensitivity Index Sensor Based on Magnetic Plasmon Resonance in Metallic Grating with Very Narrow Slits

Author(s): Xu, BZ (Xu Bin-Zong); Liu, JT (Liu Jie-Tao); Hu, HF (Hu Hai-Feng); Wang, LN (Wang Li-Na); Wei, X (Wei Xin); Song, GF (Song Guo-Feng)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 4 Article Number: 040702 DOI: 10.1088/0256-307X/30/4/040702 Published: APR 2013

Times Cited in Web of Science: 1

Total Times Cited: 2

Abstract: The index sensing characteristics of metallic deep gratings are numerically investigated. The concept is based on magnetic polariton resonance, which is very sensitive to changes in the refractive index of the surrounding medium. We numerically demonstrate that the sensitivity and figure of merit of the magnetic plasmon mode can be tailored by adjusting the depth and width of the slits. The highest sensitivity of 1542nm per refractive index unit with a good figure of merit of 12.3 is obtained. The angle-insensitive property with a high signal intensity of this system could be useful for the future design and application of wide-range sensitive plasmonic index sensors.

Addresses: [Xu Bin-Zong; Liu Jie-Tao; Hu Hai-Feng; Wang Li-Na; Wei Xin; Song Guo-Feng] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Song, GF (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: sgf@red.semi.ac.cn

ISSN: 0256-307X

Record 341 of 495

Title: High Quality Pseudomorphic In-0.24 GaAs/GaAs Multi-Quantum-Well and Large-Area Transmission Electro-Absorption Modulators

Author(s): Yang, XH (Yang Xiao-Hong); Liu, SQ (Liu Shao-Qing); Ni, HQ (Ni Hai-Qiao); Li, MF (Li Mi-Feng); Li, L (Li Liang); Han, Q (Han Qin); Niu, ZC (Niu Zhi-Chuan)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 4 Article Number: 046102 DOI: 10.1088/0256-307X/30/4/046102 Published: APR 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The good quality of 200 pairs of highly strained In0.24GaAs/GaAs multi-quantum-well (MQW) structure is demonstrated by the x-ray diffraction and photoluminescence curves. Large-area modulators based on the pseudomorphic In0.24GaAs/GaAs MQW are designed and fabricated successfully, where the diameters are not less than 3 mm and the working wavelength is extended to 1064 nm. The single pass modulation depth is demonstrated to be 0.34 at 1064 nm at a reverse voltage of 80 V.

Addresses: [Yang Xiao-Hong; Liu Shao-Qing; Li Liang; Han Qin] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Ni Hai-Qiao; Li Mi-Feng; Niu Zhi-Chuan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Yang, XH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: xhyang@red.semi.ac.cn

ISSN: 0256-307X
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Record 342 of 495

Title: Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire

Author(s): Yu, Y (Yu, Ying); Li, MF (Li, Mi-Feng); He, JF (He, Ji-Fang); He, YM (He, Yu-Ming); Wei, YJ (Wei, Yu-Jia); He, Y (He, Yu); Zha, GW (Zha, Guo-Wei); Shang, XJ (Shang, Xiang-Jun); Wang, J (Wang, Juan); Wang, LJ (Wang, Li-Juan); Wang, GW (Wang, Guo-Wei); Ni, HQ (Ni, Hai-Qiao); Lu, CY (Lu, Chao-Yang); Niu, ZC (Niu, Zhi-Chuan)

Source: NANO LETTERS Volume: 13 Issue: 4 Pages: 1399-1404 DOI: 10.1021/nl304157d Published: APR 2013

Times Cited in Web of Science: 3

Total Times Cited: 3

Abstract: We report a new type of single InAs quantum dot (QD) embedded at the junction of gold-free branched GaAs/AlGaAs nanowire (NW) grown on silicon substrate. The photoluminescence intensity of such QD is similar to 20 times stronger than that from randomly distributed QD grown on the facet of straight NW. Sharp excitonic emission is observed at 4.2 K with a line width of 101 mu eV and a vanishing two-photon emission probability of g(2)(0) = 0.031(2). This new nanostructure may open new ways for designing novel quantum optoelectronic devices.

Addresses: [Yu, Ying; Li, Mi-Feng; He, Ji-Fang; Zha, Guo-Wei; Shang, Xiang-Jun; Wang, Juan; Wang, Li-Juan; Wang, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[He, Yu-Ming; Wei, Yu-Jia; He, Yu; Lu, Chao-Yang] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China.

[He, Yu-Ming; Wei, Yu-Jia; He, Yu; Lu, Chao-Yang] Univ Sci & Technol China, Dept Modern Phys, Hefei 230026, Anhui, Peoples R China.

Reprint Address: Niu, ZC (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: zcniu@semi.ac.cn

ISSN: 1530-6984

Record 343 of 495

Title: All Zinc-Blende GaAs/(Ga,Mn)As Core-Shell Nanowires with Ferromagnetic Ordering

Author(s): Yu, XZ (Yu, Xuezhe); Wang, HL (Wang, Hailong); Pan, D (Pan, Dong); Zhao, JH (Zhao, Jianhua); Misuraca, J (Misuraca, Jennifer); von Molnar, S (von Molnar, Stephan); Xiong, P (Xiong, Peng)

Source: NANO LETTERS Volume: 13 Issue: 4 Pages: 1572-1577 DOI: 10.1021/nl304740k Published: APR 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Combining self-catalyzed vapor liquid solid growth of GaAs nanowires and low-temperature molecular-beam epitaxy of (Ga,Mn)As, we successfully synthesized all zinc-blende (ZB) GaAs/(Ga,Mn)As core-shell nanowires on Si(111) substrates. The ZB GaAs nanowire cores are first fabricated at high temperature by utilizing the Ga droplets as the catalyst and controlling the triple phase line nucleation, then the (Ga,Mn)As shells are epitazially grown on the side facets of the GaAs core at low temperature. The growth window for the pure phase GaAs/(Ga,Mn)As core shell nanowires is found to be very narrow. Both high-resolution transmission electron microscopy and scanning electron microscopy observations confirm that all-ZB GaAs/(Ga,Mn)As core-shell nanowires with smooth side surface are obtained when the Mn concentration is not more than 2% and the growth temperature is 245 degrees C or below. Magnetic measurements with different applied field directions provide strong evidence for ferromagnetic ordering in the all-ZB GaAs/(Ga,Mn)As nanowires. The hybrid nanowires offer an attractive platform to explore spin transport and device concepts in fully epitaxial all-semiconductor nanospintronic structures.

Addresses: [Yu, Xuezhe; Wang, Hailong; Pan, Dong; Zhao, Jianhua] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Misuraca, Jennifer; von Molnar, Stephan; Xiong, Peng] Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA.

Reprint Address: Zhao, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: jhzhao@red.semi.ac.cn

ISSN: 1530-6984
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Record 344 of 495

Title: Modulation of Thermal Conductivity in Kinked Silicon Nanowires: Phonon Interchanging and Pinching Effects

Author(s): Jiang, JW (Jiang, Jin-Wu); Yang, N (Yang, Nuo); Wang, BS (Wang, Bing-Shen); Rabczuk, T (Rabczuk, Timon)

Source: NANO LETTERS Volume: 13 Issue: 4 Pages: 1670-1674 DOI: 10.1021/nl400127q Published: APR 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: We perform molecular dynamics simulations to investigate the reduction of the thermal conductivity by kinks in silicon nanowires. The reduction percentage can be as high as 70% at room temperature. The temperature dependence of the reduction is also calculated. By calculating phonon polarization vectors, two mechanisms are found to be responsible for the reduced thermal conductivity: (1) the interchanging effect between the longitudinal and transverse phonon modes and (2) the pinching effect, that is, a new type of localization, for the twisting and transverse phonon modes in the kinked silicon nanowires. Our work demonstrates that the phonon interchanging and pinching effects, induced by kinking, are brand-new and effective ways in modulating heat transfer in nanowires, which enables the kinked silicon nanowires to be a promising candidate for thermoelectric materials.

Addresses: [Jiang, Jin-Wu; Rabczuk, Timon] Bauhaus Univ Weimar, Inst Struct Mech, D-99423 Weimar, Germany.

[Yang, Nuo] Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China.

[Wang, Bing-Shen] Chinese Acad Sci, State Key Lab Semicond Superlattice & Microstruct, Beijing 100083, Peoples R China.

[Wang, Bing-Shen] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Jiang, JW (reprint author), Bauhaus Univ Weimar, Inst Struct Mech, Marienstr 15, D-99423 Weimar, Germany.

E-mail Addresses: jinwu.jiang@uni-weimar.de; imyangnuo@tongji.edu.cn

ISSN: 1530-6984
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Record 345 of 495

Title: Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell

Author(s): Li, ZD (Li, Zhidong); Xiao, HL (Xiao, Hongling); Wang, XL (Wang, Xiaoliang); Wang, CM (Wang, Cuimei); Deng, QW (Deng, Qingwen); Jing, L (Jing, Liang); Ding, JQ (Ding, Jieqin); Hou, X (Hou, Xun)

Source: PHYSICA B-CONDENSED MATTER Volume: 414 Pages: 110-114 DOI: 10.1016/j.physb.2013.01.026 Published: APR 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this study, potential efficiency of InGaN/Si mechanically stacked two-junction solar cell is theoretically investigated by optimizing the band gap and thickness of the top InGaN cell. Results show that the optimum conversion efficiency is 35.2% under AM 1.5G spectral illuminations, with the bandgap and thickness of top InGaN solar cell are 2.0eV and 600 nm, respectively. The results and discussion would be helpful in designing and fabricating high efficiency InGaN/Si mechanically stacked solar cell in experiment. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Li, Zhidong; Xiao, Hongling; Wang, Xiaoliang; Wang, Cuimei; Deng, Qingwen; Jing, Liang; Ding, Jieqin] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Wang, Xiaoliang] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing, Peoples R China.

[Hou, Xun] Xi An Jiao Tong Univ, Xian 710049, Peoples R China.

Reprint Address: Xiao, HL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: hlxiao@semi.ac.cn

ISSN: 0921-4526

Record 346 of 495

Title: Slotted Hybrid III-V/Silicon Single-Mode Laser

Author(s): Zhang, YJ (Zhang, Yejin); Wang, HL (Wang, Hailing); Qu, HW (Qu, Hongwei); Zhang, SL (Zhang, Siriguleng); Zheng, WH (Zheng, Wanhua)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 7 Pages: 655-658 DOI: 10.1109/LPT.2013.2248082 Published: APR 1 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: In this letter, a III-V/silicon hybrid single-mode laser operating at L band for photonic integrated circuits is presented. The AlGaInAs gain structure is bonded onto a patterned silicon-on insulator wafer directly. The novel mode-selection mechanism based on a slotted silicon waveguide is applied, which only needs i-line projection photolithography in the whole fabrication process. At room temperature, we obtain 0.85 and 3.5 mW output power in continuous-wave and pulse-wave regimes, respectively. The side-mode suppression ratio of larger than 25 dB is obtained from experiments.

Addresses: [Zhang, Yejin; Wang, Hailing; Qu, Hongwei; Zhang, Siriguleng; Zheng, Wanhua] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Zhang, YJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: yjzhang@semi.ac.cn; hlwang@sina.com; quhongwei@sina.com; zhangsi@sina.com; whuazheng@sina.com

ISSN: 1041-1135

Record 347 of 495

Title: Photonic Generation of Phase Coded Microwave Pulses Using Cascaded Polarization Modulators

Author(s): Wang, LX (Wang, Li Xian); Li, W (Li, Wei); Wang, H (Wang, Hui); Zheng, JY (Zheng, Jian Yu); Liu, JG (Liu, Jian Guo); Zhu, NH (Zhu, Ning Hua)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 7 Pages: 678-681 DOI: 10.1109/LPT.2013.2249060 Published: APR 1 2013