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Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure


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E-mail Addresses: fzhang@semi.ac.cn

ISSN: 0021-8979
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Record 435 of 495

Title: Quantum spin Hall effect induced by electric field in silicene

Author(s): An, XT (An, Xing-Tao); Zhang, YY (Zhang, Yan-Yang); Liu, JJ (Liu, Jian-Jun); Li, SS (Li, Shu-Shen)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 4 Article Number: 043113 DOI: 10.1063/1.4790147 Published: JAN 28 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric field due to the buckled structure of the silicene. A bulk gap is opened by the staggered potential and gapless edge states appear in the gap by tuning the two kinds of Rashba spin-orbit couplings properly. Furthermore, the gapless edge states are spin-filtered and are insensitive to the non-magnetic disorder. These results prove that the quantum spin Hall effect can be induced by an external electric field in silicene, which may have certain practical significance in applications for future spintronics device. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790147]

Addresses: [An, Xing-Tao] Hebei Univ Sci & Technol, Sch Sci, Shijiazhuang 050018, Hebei, Peoples R China.

[An, Xing-Tao; Zhang, Yan-Yang; Li, Shu-Shen] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

[Zhang, Yan-Yang] Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China.

[Liu, Jian-Jun] Shijiazhuang Univ, Dept Phys, Shijiazhuang 050035, Peoples R China.

Reprint Address: An, XT (reprint author), Hebei Univ Sci & Technol, Sch Sci, Shijiazhuang 050018, Hebei, Peoples R China.

E-mail Addresses: yanyang@semi.ac.cn

ISSN: 0003-6951
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Record 436 of 495

Title: Generation of Pure Bulk Valley Current in Graphene

Author(s): Jiang, YJ (Jiang, Yongjin); Low, T (Low, Tony); Chang, K (Chang, Kai); Katsnelson, MI (Katsnelson, Mikhail I.); Guinea, F (Guinea, Francisco)

Source: PHYSICAL REVIEW LETTERS Volume: 110 Issue: 4 Article Number: 046601 DOI: 10.1103/PhysRevLett.110.046601 Published: JAN 23 2013

Times Cited in Web of Science: 10

Total Times Cited: 10

Abstract: The generation of valley current is a fundamental goal in graphene valleytronics but no practical ways of its realization are known yet. We propose a workable scheme for the generation of bulk valley current in a graphene mechanical resonator through adiabatic cyclic deformations of the strains and a chemical potential in the suspended region. The accompanied strain gauge fields can break the spatial mirror symmetry of the problem within each of the two inequivalent valleys, leading to a finite valley current due to quantum pumping. An all-electrical measurement configuration is designed to detect the novel state with pure bulk valley currents. DOI: 10.1103/PhysRevLett.110.046601

Addresses: [Jiang, Yongjin] Zhejiang Normal Univ, Ctr Stat & Theoret Condensed Matter Phys, Jinhua 321004, Peoples R China.

[Jiang, Yongjin] Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Peoples R China.

[Jiang, Yongjin; Chang, Kai] Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China.

[Low, Tony] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA.

[Chang, Kai] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

[Katsnelson, Mikhail I.] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands.

[Guinea, Francisco] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain.

Reprint Address: Jiang, YJ (reprint author), Zhejiang Normal Univ, Ctr Stat & Theoret Condensed Matter Phys, Jinhua 321004, Peoples R China.

E-mail Addresses: jyj@zjnu.cn; kchang@semi.ac.cn

ISSN: 0031-9007


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Record 437 of 495

Title: Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well

Author(s): Jin, DD (Jin, Dong-Dong); Jiang, C (Jiang, Chao); Li, GD (Li, Guo-Dong); Zhang, LW (Zhang, Liu-Wan); Yang, T (Yang, Tao); Liu, XL (Liu, Xiang-Lin); Yang, SY (Yang, Shao-Yan); Zhu, QS (Zhu, Qin-Sheng); Wang, ZG (Wang, Zhan-Guo)

Source: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 3 Article Number: 033701 DOI: 10.1063/1.4775790 Published: JAN 21 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We suggest a new theoretical model to study the anisotropic scattering effect of the elongated quantum dots embedded in the GaAs/InGaAs double hetero-junction quantum well on the two-dimensional electron gas (2DEG). The elongated quantum dot (QD) with geometry which differs from ball-shaped quantum dot having isotropic cross section is assumed to be ellipsoid in the present calculation. The results show that the scattering in the direction parallel to the ellipsoid orientation (having small cross section) is weaker than that in the direction perpendicular to the ellipsoid orientation (having larger cross section) for the elongated QD when the mobile 2DEG is confined within the channel plane. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775790]

Addresses: [Jin, Dong-Dong; Yang, Tao; Liu, Xiang-Lin; Yang, Shao-Yan; Zhu, Qin-Sheng; Wang, Zhan-Guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Jin, Dong-Dong; Zhang, Liu-Wan] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

[Jiang, Chao; Li, Guo-Dong] Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China.

Reprint Address: Jin, DD (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: ddjin2009@semi.ac.cn; qszhu@semi.ac.cn

ISSN: 0021-8979


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Record 438 of 495

Title: Conformal coating of parylene for surface anti-adhesion in polydimethylsiloxane (PDMS) double casting technique

Author(s): Chen, YF (Chen, Yuanfang); Pei, WH (Pei, Weihua); Tang, RY (Tang, Rongyu); Chen, SY (Chen, Sanyuan); Chen, HD (Chen, Hongda)

Source: SENSORS AND ACTUATORS A-PHYSICAL Volume: 189 Pages: 143-150 DOI: 10.1016/j.sna.2012.09.024 Published: JAN 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: As a simple method to fabricate a high quality copy of master, PDMS double casting technique has been more and more popular in microfluidics chips and bioMEMS application. In this work, the method in which conformal coating of parylene C serves as a demolding anti-adhesion layer in PDMS double casting technique was proposed. First casting was carried out onto master mold to generate negative PDMS mold and second casting was done onto negative PDMS mold likewise to generate positive PDMS replica with the same structure as master mold. Microstructures with aspect ratio from 4:1 to 20:1 and sharp angle from 5 degrees to 40 degrees were successfully obtained by using this new method. Experiments show replicas remain high fidelity to their masters. This new method of surface anti-adhesive treatment is environment friendly. Moreover, a single coating of parylene C can make the treated mold keep its anti-adhesive property for long lifecycle regardless of the number of replica molding cycles. (C) 2012 Elsevier B.V. All rights reserved.

Addresses: [Chen, Yuanfang; Pei, Weihua; Tang, Rongyu; Chen, Sanyuan; Chen, Hongda] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Pei, WH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: peiwh@semi.ac.cn

ISSN: 0924-4247


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Record 439 of 495

Title: A hybrid silicon single mode laser with a slotted feedback structure

Author(s): Zhang, YJ (Zhang, Yejin); Qu, HW (Qu, Hongwei); Wang, HL (Wang, Hailing); Zhang, SGL (Zhang, Siriguleng); Liu, L (Liu, Lei); Ma, SD (Ma, Shaodong); Zheng, WH (Zheng, Wanhua)

Source: OPTICS EXPRESS Volume: 21 Issue: 1 Pages: 877-883 Published: JAN 14 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: In this paper, a III-V/Silicon hybrid single mode laser operating at a long wavelength for photonic integration circuit is presented. The InGaAlAs gain structure is bonded onto a patterned silicon-on insulator wafer directly. The novel mode selected mechanism based on a slotted silicon waveguide is applied, which only need standard photolithography in the whole technological process. The side mode suppression ratio of larger than 20dB is obtained from experiments. (C) 2013 Optical Society of America

Addresses: [Zhang, Yejin] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Zhang, YJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: yjzhang@semi.ac.cn; whzheng@semi.ac.cn

ISSN: 1094-4087


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Record 440 of 495

Title: Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate

Author(s): Li, TF (Li, Tianfeng); Gao, LZ (Gao, Lizhen); Lei, W (Lei, Wen); Guo, LJ (Guo, Lijun); Yang, T (Yang, Tao); Chen, YH (Chen, Yonghai); Wang, ZG (Wang, Zhanguo)

Source: NANOSCALE RESEARCH LETTERS Volume: 8 Article Number: 27 DOI: 10.1186/1556-276X-8-27 Published: JAN 14 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs were grown by metalorganic chemical vapor deposition on Si (111) substrates without external catalyst and showed a zinc-blende crystal structure. The single NWs were studied for different polarization excitation of the incident laser beam relative to the NW axis. The transverse optical (TO) mode exhibits maximum intensity when both the incident and analyzed light polarizations are parallel to the NW axis. The TO mode of InAs NWs is found to act like a nearly perfect dipole antenna, which can be attributed to the one-dimensional NW geometry and Raman selection rules.

Addresses: [Li, Tianfeng; Gao, Lizhen; Guo, Lijun] Henan Univ, Dept Phys, Sch Phys & Elect, Kaifeng 475004, Peoples R China.

[Li, Tianfeng; Yang, Tao; Chen, Yonghai; Wang, Zhanguo] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Lei, Wen] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia.

Reprint Address: Guo, LJ (reprint author), Henan Univ, Dept Phys, Sch Phys & Elect, Kaifeng 475004, Peoples R China.

E-mail Addresses: juneguo@henu.edu.cn

ISSN: 1931-7573


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Record 441 of 495

Title: Control of epitaxial relationships of ZnO/SrTiO3 heterointerfaces by etching the substrate surface

Author(s): Jia, CH (Jia, Caihong); Chen, YH (Chen, Yonghai); Liu, XL (Liu, Xianglin); Yang, SY (Yang, Shaoyan); Zhang, WF (Zhang, Weifeng); Wang, ZG (Wang, Zhanguo)

Source: NANOSCALE RESEARCH LETTERS Volume: 8 Article Number: 23 DOI: 10.1186/1556-276X-8-23 Published: JAN 10 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Wurtzite ZnO thin films with different epitaxial relationships are obtained on as-received and etched (001), (011), and (111) SrTiO3 (STO) by metal-organic chemical vapor deposition (MOCVD). ZnO films exhibit nonpolar (1120) orientation with in-plane orientation relationship of < 0001 >(ZnO)//< 110 >(STO) on as-received (001) STO, and polar c-axis growth with < 1100 >(ZnO)//< 110 >(STO) on etched (001) STO substrates. ZnO films change from polar (0001) to semipolar (1012) oriented on as-received and etched (011) STO. On as-received and etched (111) STO, ZnO films show the same growing direction of polar (0001), but different in-plane orientations with 30A degrees rotation. The change of epitaxial relationship of ZnO films on as-received and etched (001), (011), and (111) STO substrates is accompanied with the increase of lattice mismatch, decrease of bond density, and increase of substrate surface roughness. In other words, the epitaxial relationships of ZnO/STO heterointerfaces can be controlled by etching the substrates. These results show that polar, nonpolar, and semipolar ZnO films for different applications can be grown epitaxially on STO substrates by MOCVD.

Addresses: [Jia, Caihong; Chen, Yonghai; Liu, Xianglin; Yang, Shaoyan; Wang, Zhanguo] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Jia, Caihong; Zhang, Weifeng] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004, Peoples R China.

[Jia, Caihong; Zhang, Weifeng] Henan Univ, Sch Phys & Elect, Kaifeng 475004, Peoples R China.

Reprint Address: Chen, YH (reprint author), Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yhchen@red.semi.ac.cn

ISSN: 1931-7573


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Record 442 of 495

Title: Au-Decorated Silicene: Design of a High-Activity Catalyst toward CO Oxidation

Author(s): Li, C (Li, Chong); Yang, SX (Yang, Shengxue); Li, SS (Li, Shu-Shen); Xia, JB (Xia, Jian-Bai); Li, JB (Li, Jingbo)

Source: JOURNAL OF PHYSICAL CHEMISTRY C Volume: 117 Issue: 1 Pages: 483-488 DOI: 10.1021/jp310746m Published: JAN 10 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: First-principles calculations have been performed to study Au-decorated silicene (Au/silicene) as a high-activity catalyst for CO oxidation. The high binding strength of the Au/silicene system and the high diffusion-energy barrier of Au adsorbates, as well as the assisted Coulomb repulsion effect, jointly prevent the formation of Au clusters. Au/silicene transfers many more electrons to O-2 than to CO, thus facilitating CO oxidation first by the Langmuir-Hinshelwood (LH) mechanism (CO + O-2 -> OOCO -> CO2 + O) and then by Eley-Rideal (ER) mechanism (CO + O -> CO2). The two reaction processes have quite low catalytic energy barriers of 0.34 and 0.32 eV, respectively. The underlying mechanism of high catalytic oxidation of CO can be attributed to electronic-state hybridization among Au d orbitals and CO and O-2 2 pi* antibonding states around the Fermi energy. These findings enrich the applications of Si-based materials to the high-activity catalytic field.

Addresses: [Li, Chong; Yang, Shengxue; Li, Shu-Shen; Xia, Jian-Bai; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Yang, SX (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: shengxueyang@semi.ac.cn; jbli@semi.ac.cn

ISSN: 1932-7447


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Record 443 of 495

Title: Band offsets and heterostructures of two-dimensional semiconductors

Author(s): Kang, J (Kang, Jun); Tongay, S (Tongay, Sefaattin); Zhou, J (Zhou, Jian); Li, JB (Li, Jingbo); Wu, JQ (Wu, Junqiao)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 1 Article Number: 012111 DOI: 10.1063/1.4774090 Published: JAN 7 2013

Times Cited in Web of Science: 12

Total Times Cited: 12

Abstract: The band offsets and heterostructures of monolayer and few-layer transition-metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te) are investigated from first principles calculations. The band alignments between different MX2 monolayers are calculated using the vacuum level as reference, and a simple model is proposed to explain the observed chemical trends. Some of the monolayers and their heterostructures show band alignments suitable for potential applications in spontaneous water splitting, photovoltaics, and optoelectronics. The strong dependence of the band offset on the number of layers also implicates a possible way of patterning quantum structures with thickness engineering. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4774090]

Addresses: [Kang, Jun; Li, Jingbo] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Tongay, Sefaattin; Zhou, Jian; Wu, Junqiao] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA.

[Wu, Junqiao] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.

Reprint Address: Li, JB (reprint author), Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jbli@semi.ac.cn; wuj@berkeley.edu

ISSN: 0003-6951


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Record 444 of 495

Title: Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer

Author(s): Li, HJ (Li, Hongjian); Kang, JJ (Kang, Junjie); Li, PP (Li, Panpan); Ma, J (Ma, Jun); Wang, H (Wang, Hui); Liang, M (Liang, Meng); Li, ZC (Li, Zhicong); Li, J (Li, Jing); Yi, XY (Yi, Xiaoyan); Wang, GH (Wang, Guohong)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 1 Article Number: 011105 DOI: 10.1063/1.4773558 Published: JAN 7 2013

Times Cited in Web of Science: 4

Total Times Cited: 4

Abstract: A hole injection layer (HIL) is designed in GaN-based light emitting diodes (LEDs) between multiple quantum wells and p-AlGaN electron blocking layer (EBL). Based on numerical simulation by APSYS, the band diagram is adjusted by HIL, leading to the improved hole-injection efficiency. The designed HIL is a p-GaN buffer layer grown at low temperature (LT_pGaN) on last quantum barrier before p-AlGaN EBL. The output power of the fabricated GaN-based LED device with LT_pGaN HIL is enhanced by 128% at 100 A/cm(2), while the efficiency droop is reduced by 33% compared to the conventional LED. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773558]

Addresses: [Li, Hongjian; Kang, Junjie; Li, Panpan; Ma, Jun; Liang, Meng; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Wang, Guohong] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang, Hui] YangZhou ZhongKe Semicond Lighting Co Ltd, Yangzhou 225009, Jiangsu, Peoples R China.

Reprint Address: Li, HJ (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: lihongjian@yzzkled.com

ISSN: 0003-6951
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Record 445 of 495

Title: Electron spin dynamics study of bulk p-GaAs: The screening effect

Author(s): Zhao, CB (Zhao, Chunbo); Yan, TF (Yan, Tengfei); Ni, HQ (Ni, Haiqiao); Niu, ZC (Niu, Zhichuan); Zhang, XH (Zhang, Xinhui)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 1 Article Number: 012406 DOI: 10.1063/1.4775683 Published: JAN 7 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this work, the electron spin dynamics of bulk p-GaAs doped with Be grown by molecular beam epitaxy is investigated by using the time-resolved magneto-optical Kerr rotation technique. The spin relaxation/dephasing times T-1 and T-2* are systematically investigated as a function of hole doping density and photo-excitation density as well as temperature. The complex hole doping density dependence of spin relaxation times T-1 and T-2* is observed experimentally, which agrees well with predictions of the kinetic spin Bloch equation theory published previously [J. Jiang and M. Wu, Phys. Rev. B 79, 125206 (2009)]. D'yakonov-Perel's mechanism [M. Dyakonov and V. Perel, Sov. Phys. Solid State 13, 3023 (1972)] is discussed to dominate the electron spin relaxation process in p-GaAs, with the effect of hole screening proven to play an important role. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775683]

Addresses: [Zhao, Chunbo; Yan, Tengfei; Ni, Haiqiao; Niu, Zhichuan; Zhang, Xinhui] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Zhao, CB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: xinhuiz@semi.ac.cn

ISSN: 0003-6951


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Record 446 of 495

Title: First-principles study of atomic hydrogen adsorption and initial hydrogenation of Zr(0001) surface

Author(s): Zhang, P (Zhang, Peng); Wang, SX (Wang, Shuangxi); Zhao, J (Zhao, Jian); He, CH (He, Chaohui); Zhao, YL (Zhao, Yaolin); Zhang, P (Zhang, Ping)

Source: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 1 Article Number: 013706 DOI: 10.1063/1.4772675 Published: JAN 7 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The atomic hydrogen adsorption on Zr(0001) surface is systematically investigated by using density functional theory within the generalized gradient approximation and a supercell approach. The coverage dependence of the adsorption structures and energetics is studied in detail for a wide range from 0.11 to 2.0 monolayer. At low coverage of 0 < Theta <= 1.0, the most stable adsorption site is identified as the on-surface hcp site followed by the fcc site, and the adsorption energy gradually increases with the coverage, thus, indicating the higher stability of on-surface adsorption and the tendency to form H clusters. The origin of this stability is carefully analyzed by the projected density of states and the charge distribution showing the Zr-H chemical bonding with a mixed ionic/covalent feature during the surface hydrogenation. In addition, the minimum energy paths as well as the activation barriers of the on-surface diffusion and the penetration from on-surface sites to subsurface sites are also calculated. At high coverage of 1.0 < Theta <= 2.0, it is found that the co-adsorption configuration with 1.0 monolayer H residing on the surface hcp sites and the remaining (Theta - 1) monolayer H occupying the sub-surface octahedral sites is most energetically favorable. The electronic structure properties of the resultant H-Zr-H sandwich structures at the coverage range of 1.0 < Theta <= 2.0 reveal the similar characteristics to the bulk hydride ZrH2, providing a detailed microscopic understanding for the Zr surface hydrogenation phenomenon. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772675]

Addresses: [Zhang, Peng; He, Chaohui; Zhao, Yaolin] Xi An Jiao Tong Univ, Dept Nucl Sci & Technol, Xian 710049, Peoples R China.

[Wang, Shuangxi] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Zhao, Jian] China Univ Min & Technol, State Key Lab Geomech & Deep Underground Engn, Beijing 100083, Peoples R China.

[Zhang, Ping] Inst Appl Phys & Computat Math, LCP, Beijing 100088, Peoples R China.

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