Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Addresses: [Liu, Quanlong; Zhao, Chunwang; Li, Jijun; Xing, Yongming] Inner Mongolia Univ Technol, Coll Sci, Hohhot, Peoples R China.

[Su, Shaojian] Huaqiao Univ, Coll Informat Sci & Engn, Xiamen, Peoples R China.

[Cheng, Buwen] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing, Peoples R China.

Reprint Address: Zhao, CW (reprint author), Inner Mongolia Univ Technol, Coll Sci, Hohhot, Peoples R China.

E-mail Addresses: zhaocw@imut.edu.cn

ISSN: 1932-6203

Record 310 of 495

Title: Strain-driven synthesis of self-catalyzed branched GaAs nanowires

Author(s): Zha, GW (Zha, Guowei); Li, MF (Li, Mifeng); Yu, Y (Yu, Ying); Wang, LJ (Wang, Lijuan); Xu, JX (Xu, Jianxing); Shang, XJ (Shang, Xiangjun); Ni, HQ (Ni, Haiqiao); Niu, ZC (Niu, Zhichuan)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 16 Article Number: 163115 DOI: 10.1063/1.4803028 Published: APR 22 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We report the strain-driven synthesis of self-catalyzed branched GaAs nanowires (NWs). Decoration of facets with branches is achieved as NWs elongate or with the insertion of InAs. The hemisphere tip shaped branches on the backbone implies identical Vapor-Liquid-Solid growth mechanism. We present the homogeneous gallium-droplets (GDs) nucleation on the GaAs {110} side facets in the form of GaAs quantum-rings, specifying the role of GDs in branching. Structural characterization revealed strain defects at the crotch between the backbones and branches of the NWs. The evolution mechanism of self-catalyzed branched NWs is discussed and finally nano-trees with hyper-branches are demonstrated. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4803028]

Addresses: [Zha, Guowei; Li, Mifeng; Yu, Ying; Wang, Lijuan; Xu, Jianxing; Shang, Xiangjun; Ni, Haiqiao; Niu, Zhichuan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Niu, ZC (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: zcniu@semi.ac.cn

ISSN: 0003-6951

Record 311 of 495

Title: Anomalous electron trajectory in topological insulators

Author(s): Shi, LK (Shi, Li-kun); Zhang, SC (Zhang, Shou-cheng); Chang, K (Chang, Kai)

Source: PHYSICAL REVIEW B Volume: 87 Issue: 16 Article Number: 161115 DOI: 10.1103/PhysRevB.87.161115 Published: APR 22 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We present a general theory about electron orbital motions in topological insulators. An in-plane electric field drives spin-up and spin-down electrons bending to opposite directions, and skipping orbital motions, a counterpart of the integer quantum Hall effect, are formed near the boundary of the sample. The accompanying Zitterbewegung can be found and controlled by tuning external electric fields. Ultrafast flipping electron spin leads to a quantum side jump in the topological insulator, and a snake-orbit motion in two-dimensional electron gas with spin-orbit interactions. This feature provides a way to control electron orbital motion by manipulating electron spin. DOI: 10.1103/PhysRevB.87.161115

Addresses: [Shi, Li-kun; Chang, Kai] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

[Zhang, Shou-cheng] Stanford Univ, Dept Phys, Stanford, CA 94305 USA.

Reprint Address: Shi, LK (reprint author), Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: kchang@semi.ac.cn

ISSN: 1098-0121
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Record 312 of 495

Title: High power buried sampled grating distributed feedback quantum cascade lasers

Author(s): Zhang, JC (Zhang, J. C.); Liu, FQ (Liu, F. Q.); Yao, DY (Yao, D. Y.); Zhuo, N (Zhuo, N.); Wang, LJ (Wang, L. J.); Liu, JQ (Liu, J. Q.); Wang, ZG (Wang, Z. G.)

Source: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 15 Article Number: 153101 DOI: 10.1063/1.4801906 Published: APR 21 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: A novel index-coupled distributed feedback quantum cascade laser emitting at lambda similar to 4.8 mu m is demonstrated by a sampled grating. The coupling coefficient can be almost controlled arbitrarily according to the duty cycle of sampled grating. The additional supermodes caused by the sampled grating can be strongly suppressed by choosing a small sampling period, so that the supermodes are shifted apart from the gain curve. Single-mode emission without any significant disadvantages compared with uniform grating is achieved. Especially, this powerful approach presented here can be applied to achieve the performance with high power and low threshold simultaneously. (C) 2013 AIP Publishing LLC

Addresses: [Zhang, J. C.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Zhang, JC (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: fqliu@semi.ac.cn

ISSN: 0021-8979
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Record 313 of 495

Title: Spin transport and accumulation in the persistent photoconductor Al0.3Ga0.7As

Author(s): Misuraca, J (Misuraca, Jennifer); Kim, JI (Kim, Joon-Il); Lu, J (Lu, Jun); Meng, KK (Meng, Kangkang); Chen, L (Chen, Lin); Yu, XZ (Yu, Xuezhe); Zhao, JH (Zhao, Jianhua); Xiong, P (Xiong, Peng); von Molnar, S (von Molnar, Stephan)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 15 Article Number: 152408 DOI: 10.1063/1.4802259 Published: APR 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel material in situ via photodoping. Hanle effect measurements are completed at various carrier densities, and the measurements yield spin lifetimes on the order of nanoseconds, an order of magnitude smaller than in bulk GaAs. These measurements illustrate that this methodology can be used to obtain a detailed description of how spin lifetimes depend on carrier density in semiconductors across the metal-insulator transition. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802259]

Addresses: [Misuraca, Jennifer; Kim, Joon-Il; Xiong, Peng; von Molnar, Stephan] Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA.

[Lu, Jun; Meng, Kangkang; Chen, Lin; Yu, Xuezhe; Zhao, Jianhua] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Misuraca, J (reprint author), Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA.

E-mail Addresses: jm05h@my.fsu.edu

ISSN: 0003-6951
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Record 314 of 495

Title: Perpendicularly magnetized tau-MnAl (001) thin films epitaxied on GaAs

Author(s): Nie, SH (Nie, S. H.); Zhu, LJ (Zhu, L. J.); Lu, J (Lu, J.); Pan, D (Pan, D.); Wang, HL (Wang, H. L.); Yu, XZ (Yu, X. Z.); Xiao, JX (Xiao, J. X.); Zhao, JH (Zhao, J. H.)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 15 Article Number: 152405 DOI: 10.1063/1.4801932 Published: APR 15 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: Perpendicularly magnetized s-MnAl films have been epitaxied on GaAs (001) by molecular-beam epitaxy. Crystalline quality and magnetic properties of the samples were strongly dependent on growth temperature. The highest coercivity of 10.7 kOe, saturation magnetization of 361.4 emu/cm(3), perpendicular magnetic anisotropy constant of 13.65 Merg/cm(3), and magnetic energy product of 4.44 MGOe were achieved. These tunable magnetic properties make MnAl films valuable as excellent and cost-effective alternative for not only high density perpendicular magnetic recording storage and spintronics devices but also permanent magnets. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4801932]

Addresses: [Nie, S. H.; Zhu, L. J.; Lu, J.; Pan, D.; Wang, H. L.; Yu, X. Z.; Xiao, J. X.; Zhao, J. H.] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Zhao, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jhzhao@red.semi.ac.cn

ISSN: 0003-6951

Record 315 of 495

Title: PEDOT/MWCNT composite film coated microelectrode arrays for neural interface improvement

Author(s): Chen, SY (Chen, Sanyuan); Pei, WH (Pei, Weihua); Gui, Q (Gui, Qiang); Tang, RY (Tang, Rongyu); Chen, YF (Chen, Yuanfang); Zhao, SS (Zhao, Shanshan); Wang, H (Wang, Huan); Chen, HD (Chen, Hongda)

Source: SENSORS AND ACTUATORS A-PHYSICAL Volume: 193 Pages: 141-148 DOI: 10.1016/j.sna.2013.01.033 Published: APR 15 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: High-performance electrode materials play a crucial role at the interface of implantable neural electrode. To realize bidirectional transduction between neural tissue and neural microelectrodes, the electrode material must satisfy the function of stimulating and recording. As the number and density of electrode increase, tiny electrodes with high performance are needed in future bioengineering study. In this study, a method of electrochemically co-deposited poly(3,4-ethylenedioxythiophene)/multi-walled carbon nanotube (PEDOT/MWCNT) onto microelectrode arrays with 8 channels was investigated. After modification, the impedance, charge transfer ability and frequency response characteristic were improved simultaneously. Compared with bare golden electrode, the coated microelectrodes with a surface area of 615 mu m(2) exhibited a particularly high safe charge injection limit of 7.74 mC/cm(2) and low impedance of 12 k Omega at 1 kHz. In vivo inferior colliculus implantation of rats revealed that the composite film coated microelectrodes showed higher signal to noise ratio recordings >15 dB compared to 6 dB SNR of bare gold microelectrodes. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Chen, Sanyuan; Pei, Weihua; Gui, Qiang; Tang, Rongyu; Chen, Yuanfang; Zhao, Shanshan; Wang, Huan; Chen, Hongda] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Pei, WH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: peiwh@semi.ac.cn

ISSN: 0924-4247

Record 316 of 495

Title: Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing

Author(s): Kang, J (Kang, Jun); Tongay, S (Tongay, Sefaattin); Li, JB (Li, Jingbo); Wu, JQ (Wu, Junqiao)

Source: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 14 Article Number: 143703 DOI: 10.1063/1.4799126 Published: APR 14 2013

Times Cited in Web of Science: 2

Total Times Cited: 2

Abstract: The stability and band bowing effects of two-dimensional transition metal dichalcogenide alloys MX2(1-x)X'(2x) (M = Mo, W, and X, X' = S, Se, Te) are investigated by employing the cluster expansion method and the special quasi-random structure approach. It is shown that for (S, Se) alloys, there exist stable ordered alloy structures with concentration x equal to 1/3, 1/2, and 2/3, which can be explained by the small lattice mismatch between the constituents and a large additional charge exchange, while no ordered configuration exists for (Se, Te) and (S, Te) alloys at 0K. The calculated phase diagrams indicate that complete miscibility in the alloys can be achieved at moderate temperatures. The bowing in lattice constant for the alloys is quite small, while the bowing in band gap, and more so in band edge positions, is much more significant. By decomposing the formation of alloy into multiple steps, it is found that the band bowing is the joint effect of volume deformation, chemical difference, and a low-dimensionality enhanced structure relaxation. The direct band gaps in these alloys continuously tunable from 1.8 eV to 1.0 eV, along with the moderate miscibility temperatures, make them good candidates for two-dimensional optoelectronics. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799126]

Addresses: [Kang, Jun; Tongay, Sefaattin; Li, Jingbo; Wu, Junqiao] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Kang, Jun; Wu, Junqiao] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.

[Tongay, Sefaattin; Wu, Junqiao] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA.

Reprint Address: Kang, J (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jbli@semi.ac.cn; wuj@berkeley.edu

ISSN: 0021-8979

Record 317 of 495

Title: Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth

Author(s): Wen, JJ (Wen, Juanjuan); Liu, Z (Liu, Zhi); Li, LL (Li, Leliang); Li, C (Li, Chong); Xue, CL (Xue, Chunlai); Zuo, YH (Zuo, Yuhua); Li, CB (Li, Chuanbo); Wang, QM (Wang, Qiming); Cheng, BW (Cheng, Buwen)

Source: JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 14 Article Number: 143107 DOI: 10.1063/1.4801805 Published: APR 14 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Room temperature photoluminescence (PL) was observed along 50 mu m long Ge strips on insulator on bulk Si substrates fabricated by rapid melt growth. The PL peaks evidently exhibited a redshift from the origin to the end of the Ge strip because of the shrinkage of the direct bandgap of Ge. Moreover, PL intensities increased along the direction of lateral epitaxial growth primarily because of the decrease in the energy difference between the direct and indirect gaps of Ge. The change in the Ge band structure, which facilitated changes in PL peaks and intensities, was found to have resulted from the variation of tensile strain ratios and Si fractions along Ge strips. Furthermore, the PL intensity at the end of the strip was one magnitude higher than that of bulk Ge, which indicates the high quality of Ge-on-insulator structures. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4801805]

Addresses: [Wen, Juanjuan; Liu, Zhi; Li, Leliang; Li, Chong; Xue, Chunlai; Zuo, Yuhua; Li, Chuanbo; Wang, Qiming; Cheng, Buwen] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Wen, JJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: cbw@semi.ac.cn

ISSN: 0021-8979

Record 318 of 495

Title: Multi-channel DFB laser array fabricated by SAG with optimized epitaxy conditions

Author(s): Zhang, C (Zhang, Can); Liang, S (Liang, Song); Ma, L (Ma, Li); Han, LS (Han, Liangshun); Zhu, HL (Zhu, Hongliang)

Source: CHINESE OPTICS LETTERS Volume: 11 Issue: 4 Article Number: 041401 DOI: 10.3788/COL201311.041401 Published: APR 10 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Selective area growth (SAG) is performed to fabricate monolithically integrated distributed feedback (DFB) laser array by adjusting the width of a SiO2 mask. A strain-compensated-barrier structure is adopted to reduce the accumulated strain and improve the quality of multi-quantum well materials. Varying the strip width of the SAG masks, the DFB laser array with an average channel spacing of 1.47 nm is demonstrated by a conventional holographic method with constant-pitch grating. The threshold current from 14 to 18 mA and over 35-dB side mode suppression ratio (SMSR) are obtained for all DFB lasers in the array.

Addresses: [Zhang, Can; Liang, Song; Ma, Li; Han, Liangshun; Zhu, Hongliang] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China.

Reprint Address: Liang, S (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China.

E-mail Addresses: liangsong@semi.ac.cn

ISSN: 1671-7694

Record 319 of 495

Title: Wavelength evolution of long-period fiber gratings in a water environment

Author(s): Zhao, Q (Zhao, Qiang); Qu, Y (Qu, Yi); Wang, YJ (Wang, Yong-Jie); Li, F (Li, Fang)

Source: APPLIED OPTICS Volume: 52 Issue: 11 Pages: 2478-2483 DOI: 10.1364/AO.52.002478 Published: APR 10 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In a water environment, wavelength evolution behavior of long-period fiber gratings (LPFGs) written in H-2-loaded fibers after annealing is studied. The phenomena that wavelength shifts in the longer wavelength direction and then in the shorter wavelength direction is observed. A shift of the grating resonance peak (LP05) of as much as 2.5 nm is found. A water-mediated model that water molecules induce the second diffusion of the remaining H-2 in the fiber and a diffusion-reaction mechanism that water molecules penetrate into fiber internal structures are proposed and are combined to explain the wavelength evolution process. Both the calculated balance point time according to the model, and the qualitative analysis according to the mechanism, correspond well with the experimental results. This research indicates that wavelength variation has to be considered or prevented when H-2-loaded LPFGs are used in a water environment. (C) 2013 Optical Society of America

Addresses: [Zhao, Qiang; Qu, Yi] Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Jilin, Peoples R China.

[Zhao, Qiang; Wang, Yong-Jie; Li, Fang] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

Reprint Address: Zhao, Q (reprint author), Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Jilin, Peoples R China.

E-mail Addresses: zqhero9494@163.com; quyi@cust.edu.cn

ISSN: 1559-128X
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Record 320 of 495

Title: Hierarchical silicon nanowires-carbon textiles matrix as a binder-free anode for high-performance advanced lithium-ion batteries

Author(s): Liu, B (Liu, Bin); Wang, XF (Wang, Xianfu); Chen, HT (Chen, Haitian); Wang, ZR (Wang, Zhuoran); Chen, D (Chen, Di); Cheng, YB (Cheng, Yi-Bing); Zhou, CW (Zhou, Chongwu); Shen, GZ (Shen, Guozhen)

Source: SCIENTIFIC REPORTS Volume: 3 Article Number: 1622 DOI: 10.1038/srep01622 Published: APR 9 2013

Times Cited in Web of Science: 3

Total Times Cited: 3

Abstract: Toward the increasing demands of portable energy storage and electric vehicle applications, the widely used graphite anodes with significant drawbacks become more and more unsuitable. Herein, we report a novel scaffold of hierarchical silicon nanowires-carbon textiles anodes fabricated via a facile method. Further, complete lithium-ion batteries based on Si and commercial LiCoO2 materials were assembled to investigate their corresponding across-the-aboard performances, demonstrating their enhanced specific capacity (2950 mAh g(-1) at 0.2 C), good repeatability/ rate capability (even >900 mAh g(-1) at high rate of 5 C), long cycling life, and excellent stability in various external conditions (curvature, temperature, and humidity). Above results light the way to principally replacing graphite anodes with silicon-based electrodes which was confirmed to have better comprehensive performances.

Addresses: [Liu, Bin; Wang, Xianfu; Wang, Zhuoran; Chen, Di; Shen, Guozhen] Huazhong Univ Sci & Technol, WNLO, Wuhan 430074, Peoples R China.

[Liu, Bin; Wang, Xianfu; Wang, Zhuoran; Chen, Di; Shen, Guozhen] Huazhong Univ Sci & Technol, Coll Opt & Elect Informat, Wuhan 430074, Peoples R China.

[Cheng, Yi-Bing] Monash Univ, Fac Engn, Clayton, Vic 3800, Australia.

[Chen, Haitian; Zhou, Chongwu] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA.

[Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Zhou, CW (reprint author), Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA.

E-mail Addresses: chongwuz@usc.edu; gzshen@semi.ac.cn

ISSN: 2045-2322

Record 321 of 495

Title: High-responsivity GeSn short-wave infrared p-i-n photodetectors

Author(s): Zhang, DL (Zhang, Dongliang); Xue, CL (Xue, Chunlai); Cheng, BW (Cheng, Buwen); Su, SJ (Su, Shaojian); Liu, Z (Liu, Zhi); Zhang, X (Zhang, Xu); Zhang, GZ (Zhang, Guangze); Li, CB (Li, Chuanbo); Wang, QM (Wang, Qiming)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 14 Article Number: 141111 DOI: 10.1063/1.4801957 Published: APR 8 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Surface-illuminated GeSn p-i-n photodetectors (PDs) with Ge0.964Sn0.036 active layer on Ge substrate were fabricated. Photodetection up to 1.95 mu m is achieved with a responsivity of 0.13 A/W. High responsivities of 0.56 and 0.71 A/W were achieved under a reverse bias voltage of 3V at 1640 and 1790 nm, respectively. A low dark current of 1.08 mu A was obtained at a reverse bias of 1V with a diameter of 150 mu m, which corresponds to a current density of 6.1mA/cm(2). This value is among the lowest dark current densities reported among GeSn PDs. (C) 2013 AIP Publishing LLC

Addresses: [Zhang, Dongliang; Xue, Chunlai; Cheng, Buwen; Liu, Zhi; Zhang, Xu; Zhang, Guangze; Li, Chuanbo; Wang, Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Su, Shaojian] Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021, Fujian Province, Peoples R China.

Reprint Address: Xue, CL (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: clxue@semi.ac.cn

ISSN: 0003-6951
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Record 322 of 495

Title: Lateral cavity photonic crystal surface emitting laser based on commercial epitaxial wafer

Author(s): Wang, YF (Wang, Yufei); Qu, HW (Qu, Hongwei); Zhou, WJ (Zhou, Wenjun); Qi, AY (Qi, Aiyi); Zhang, JX (Zhang, Jianxin); Liu, L (Liu, Lei); Zheng, WH (Zheng, Wanhua)