1. A multi-channel fully differential programmable integrated circuit for neural recording application
Gui, Yun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Xu; Wang, Yuan; Liu, Ming; Pei, Weihua; Liang, Kai; Huang, Suibiao; Li, Bin; Chen, Hongda Source: Journal of Semiconductors, v 34, n 10, October 2013
Database: Compendex
2. Electronic structural Moiré pattern effects on MoS 2/MoSe2 2D heterostructures
Kang, Jun (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Li, Jingbo; Li, Shu-Shen; Xia, Jian-Bai; Wang, Lin-Wang Source: Nano Letters, v 13, n 11, p 5485-5490, November 13, 2013
Database: Compendex
3. 1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure
Wang, Huolei (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China); Mi, Junping; Zhou, Xuliang; Meriggi, Laura; Steer, Matthew; Cui, Bifeng; Chen, Weixi; Pan, Jiaoqing; Ding, Ying Source: Optics Letters, v 38, n 22, p 4868-4871, November 15, 2013
Database: Compendex
4. High delay precision based on dynamic phase-shift for range-gated laser imaging technology
Cui, Wei (Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Fan, Song-Tao; Wang, Xin-Wei; Zhou, Yan Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8905, 2013, International Symposium on Photoelectronic Detection and Imaging 2013: Laser Sensing and Imaging and Applications
Database: Compendex
5. The application of camera calibration in range-gated 3-D imaging technology
Liu, Xiao-Quan (Optoelectronic System Laboratory, Institute of Semiconductor, CAS, Beijing 100083, China); Wang, Xian-Wei; Zhou, Yan Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8905, 2013, International Symposium on Photoelectronic Detection and Imaging 2013: Laser Sensing and Imaging and Applications
Database: Compendex
6. Atomic layer deposition of BiFeO3 thin films using β-diketonates and H2O
Zhang, Feng (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Sun, Guosheng; Zhao, Wanshun; Wang, Lei; Zheng, Liu; Liu, Shengbei; Liu, Bin; Dong, Lin; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping Source: Journal of Physical Chemistry C, v 117, n 46, p 24579-24585, November 21, 2013
Database: Compendex
7. GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition
Xu, Kun (Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124, China); Xu, Chen; Xie, Yiyang; Deng, Jun; Zhu, Yanxu; Guo, Weiling; Mao, Mingming; Xun, Meng; Chen, Maoxing; Zheng, Lei; Sun, Jie Source: Applied Physics Letters, v 103, n 22, November 25, 2013
Database: Compendex
8. Temperature dependence of electronic behaviors in n-type multiple-channel junctionless transistors
Ma, Liuhong (Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Han, Weihua; Wang, Hao; Li, Xiaoming; Yang, Fuhua Source: Journal of Applied Physics, v 114, n 12, 2013
Database: Compendex
9. Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced lightextraction of light-emitting diodes
Du, Chengxiao (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wei, Tongbo; Zheng, Haiyang; Wang, Liancheng; Geng, Chong; Yan, Qingfeng; Wang, Junxi; Li, Jinmin Source: Optics Express, v 21, n 21, p 25373-25380, October 21, 2013
Database: Compendex
10. First-principles study of electronic and magnetic properties of FeC13-based graphite intercalation compounds
Li, Yan (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yue, Qu Source: Physica B: Condensed Matter, v 425, p 72-77, 2013
Database: Compendex
11. Design of a high-speed silicon electro-optical modulator based on an add-drop micro-ring resonator
Cao, Tong-Tong (State Key Laboratory on Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Li-Bin; Fei, Yong-Hao; Cao, Yan-Mei; Lei, Xun; Chen, Shao-Wu Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 19, 2013 Language: Chinese
Database: Compendex
12. Nanotetrapods: Quantum dot hybrid for bulk heterojunction solar cells
Tan, Furui (Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Kaifeng 475004, China); Qu, Shengchun; Li, Fumin; Jiang, Qiwei; Chen, Chong; Zhang, Weifeng; Wang, Zhanguo Source: Nanoscale Research Letters, v 8, n 1, p 1-8, 2013
Database: Compendex
13. High power buried sampled grating distributed feedback quantum cascade lasers
Zhang, J.C. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Liu, F.Q.; Yao, D.Y.; Zhuo, N.; Wang, L.J.; Liu, J.Q.; Wang, Z.G. Source: Journal of Applied Physics, v 113, n 15, April 2013
Database: Compendex
14. Number-resolved master equation approach to quantum transport under the self-consistent Born approximation
Liu, Yu (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Jin, Jinshuang; Li, Jun; Li, Xinqi; Yan, Yijing Source: Science China: Physics, Mechanics and Astronomy, v 56, n 10, p 1866-1873, October 2013
Database: Compendex
15. A low-power column-parallel ADC for high-speed CMOS image sensor
Han, Ye (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Quanliang; Shi, Cong; Liu, Liyuan; Wu, Nanjian Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8908, 2013, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications
Database: Compendex
16. Rechargeable mg-ion batteries based on WSe2 nanowire cathodes
Liu, Bin (Wuhan National Laboratory for Optoelectronics (WNLO), College of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China); Luo, Tao; Mu, Guangyuan; Wang, Xianfu; Chen, Di; Shen, Guozhen Source: ACS Nano, v 7, n 9, p 8051-8058, September 24, 2013
Database: Compendex
17. High efficient GaN-based laser diodes with tunnel junction
Feng, M.X. (Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, China); Liu, J.P.; Zhang, S.M.; Jiang, D.S.; Li, Z.C.; Zhou, K.; Li, D.Y.; Zhang, L.Q.; Wang, F.; Wang, H.; Chen, P.; Liu, Z.S.; Zhao, D.G.; Sun, Q.; Yang, H. Source: Applied Physics Letters, v 103, n 4, July 22, 2013
Database: Compendex
18. Designment of a novel optical streak camera with ultrahigh temporal resolution
Wei, Huiyue (Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China); Xu, Tao; Wang, Feng; Peng, Xiaoshi; Wei, Xin; Liu, Shenye Source: Guangxue Xuebao/Acta Optica Sinica, v 33, n 8, p 0823003, August 2013 Language: Chinese
Database: Compendex
19. Low-threshold, high SMSR tunable external cavity quantum cascade laser around 4.7 μ m
Tan, S. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, J.C.; Zhuo, N.; Wang, L.J.; Liu, F.Q.; Yao, D.Y.; Liu, J.Q.; Wang, Z.G. Source: Optical and Quantum Electronics, v 45, n 11, p 1147-1155, 2013
Database: Compendex
20. N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array
Wang, Liancheng (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Ma, Jun; Liu, Zhiqiang; Yi, Xiaoyan; Yuan, Guodong; Wang, Guohong Source: Journal of Applied Physics, v 114, n 13, 2013
Database: Compendex
21. Electronic structure of twisted bilayer graphene
Wu, Jiang-Bin (The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Xin; Tan, Ping-Heng; Feng, Zhi-Hong; Li, Jia Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 15, August 5, 2013 Language: Chinese
Database: Compendex
22. Two-band finite difference method for the bandstructure calculation with nonparabolicity effects in quantum cascade lasers
Ma, Xunpeng (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Kangwen; Zhang, Zuyin; Hu, Haifeng; Wang, Qing; Wei, Xin; Song, Guofeng Source: Journal of Applied Physics, v 114, n 6, August 14, 2013
Database: Compendex
23. From the ZnO hollow cage clusters to zno nanoporous phases: A first-principles bottom-up prediction
Liu, Zhifeng (College of Physics, Chongqing University, Chongqing 401331, China); Wang, Xinqiang; Cai, Jiangtao; Liu, Gaobin; Zhou, Ping; Wang, Kan; Zhu, Hengjiang Source: Journal of Physical Chemistry C, v 117, n 34, p 17633-17643, August 29, 2013
Database: Compendex
24. Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization
Li, Hongjian (R and D Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Panpan; Kang, Junjie; Li, Zhi; Zhang, Yiyun; Liang, Meng; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Wang, Guohong Source: Applied Physics Express, v 6, n 9, September 2013
Database: Compendex
25. A 10-bit column-parallel cyclic ADC for high-speed CMOS image sensors
Han, Ye (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Quanliang; Shi, Cong; Wu, Nanjian Source: Journal of Semiconductors, v 34, n 8, August 2013
Database: Compendex
26. Photonic MMW-UWB signal generation via DPMZM-based frequency up-conversion
Li, Wei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Li Xian; Zheng, Jian Yu; Li, Ming; Zhu, Ning Hua Source: IEEE Photonics Technology Letters, v 25, n 19, p 1875-1878, 2013
Database: Compendex
27. Single phase modulator for binary phase-coded microwave signals generation
Li, Wei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Li Xian; Li, Ming; Zhu, Ning Hua Source: IEEE Photonics Technology Letters, v 25, n 19, p 1867-1870, 2013
Database: Compendex
28. MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers
Zhang, Tiancheng (National Key Laboratory on High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China); Ni, Qinfei; Liu, Xuezhen; Yu, Bin; Wang, Yuxia; Zhang, Yu; Ma, Xunpeng; Wang, Yongbin; Xu, Yun Source: Key Engineering Materials, v 552, p 389-392, 2013, Advances in Optics Manufacture
Database: Compendex
29. Double-layer anti-reflection coating containing a nanoporous anodic aluminum oxide layer for GaAs solar cells
Yang, Tianshu (Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Xiaodong; Liu, Wen; Shi, Yanpeng; Yang, Fuhua Source: Optics Express, v 21, n 15, p 18207-18215, July 29, 2013
Database: Compendex
30. Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure
Wang, Juan (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Wang, Guo-Wei; Xu, Ying-Qiang; Xing, Jun-Liang; Xiang, Wei; Tang, Bao; Zhu, Yan; Ren, Zheng-Wei; He, Zhen-Hong; Niu, Zhi-Chuan Source: Journal of Applied Physics, v 114, n 1, July 7, 2013
Database: Compendex
31. InAs-mediated growth of vertical InSb nanowires on Si substrates
Li, Tianfeng (Department of Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, China); Gao, Lizhen; Lei, Wen; Guo, Lijun; Pan, Huayong; Yang, Tao; Chen, Yonghai; Wang, Zhanguo Source: Nanoscale Research Letters, v 8, n 1, 2013
Database: Compendex
32. A sphere-cut-splice crossover for the evolution of cluster structures
Chen, Zhanghui (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Jiang, Xiangwei; Li, Jingbo; Li, Shushen Source: Journal of Chemical Physics, v 138, n 21, June 7, 2013
Database: Compendex
33. Ab initio theoretical and photoemission studies on formation of 4H-SiC(0 0 0 1)/SiO2 interface
Zheng, Liu (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Sun, Guosheng; Zhang, Feng; Liu, Shengbei; Liu, Bin; Dong, Lin; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping Source: Applied Surface Science, v 280, p 500-503, September 1, 2013
Database: Compendex
34. Flexible asymmetric supercapacitors based upon Co9S8 nanorod//Co3O4@RuO2 nanosheet arrays on carbon cloth
Xu, Jing (Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China); Wang, Qiufan; Wang, Xiaowei; Xiang, Qingyi; Liang, Bo; Chen, Di; Shen, Guozhen Source: ACS Nano, v 7, n 6, p 5453-5462, June 25, 2013
Database: Compendex
35. Spontaneous quasi-periodic current self-oscillations in a weakly coupled GaAs/(Al,Ga)As superlattice at room temperature
Huang, Yuyang (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, No. 398, Ruoshui Rd, 215123 Suzhou, China); Li, Wen; Ma, Wenquan; Qin, Hua; Grahn, Holger T.; Zhang, Yaohui Source: Applied Physics Letters, v 102, n 24, June 17, 2013
Database: Compendex
36. Numerical study of radial temperature distribution in the AlN sublimation growth system
Li, Huijie (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Liu, Xianglin; Feng, Yuxia; Wei, Hongyuan; Yang, Shaoyan Source: Crystal Research and Technology, v 48, n 5, p 321-327, May 2013
Database: Compendex
37. The single-longitudinal-mode operation of a ridge waveguide laser based on two-dimensional photonic crystals
Wang, Hua-Yong (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xu, Xing-Sheng Source: Chinese Physics B, v 22, n 5, May 2013
Database: Compendex
38. Development of silicon photonic devices for optical interconnects
Xiao, Xi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Zhiyong; Chu, Tao; Xu, Hao; Li, Xianyao; Nemkova, Anastasia; Kang, Xiong; Yu, Yude; Yu, Jinzhong Source: Science China Technological Sciences, v 56, n 3, p 586-593, March 2013
Database: Compendex
39. Output characteristics of square and circular resonator microlasers connected with two output waveguides
Huang, Yongzhen (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Lü, Xiaomeng; Lin, Jiandong; Du, Yun Source: Science China Technological Sciences, v 56, n 3, p 538-542, March 2013
Database: Compendex
40. Shock-induced brittle cracking in HVPE-GaN processed by laser lift-off techniques
Su, X.J. (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China); Xu, K.; Xu, Y.; Ren, G.Q.; Zhang, J.C.; Wang, J.F.; Yang, H. Source: Journal of Physics D: Applied Physics, v 46, n 20, May 22, 2013
Database: Compendex
41. Single InAs quantum dot coupled to different "environments" in one wafer for quantum photonics
Yu, Ying (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Shang, Xiang-Jun; Li, Mi-Feng; Zha, Guo-Wei; Xu, Jian-Xing; Wang, Li-Juan; Wang, Guo-Wei; Ni, Hai-Qiao; Dou, Xiuming; Sun, Baoquan; Niu, Zhi-Chuan Source: Applied Physics Letters, v 102, n 20, May 20, 2013
Database: Compendex
42. 32-site microelectrode modified with Pt black for neural recording fabricated with thin-film silicon membrane
Chen, SanYuan (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Pei, WeiHua; Zhao, Hui; Gui, Qiang; Tang, RongYu; Chen, YuanFang; Fang, XiaoLei; Hong, Bo; Gao, XiaoRong; Chen, HongDa Source: Science China Information Sciences, p 1-7, 2013
Article in Press
Database: Compendex
43. A 0.6-V to 1-V Audio ΔΣ modulator in 65 nm CMOS with 90.2 dB SNDR at 0.6-V
Liu, Liyuan (Tsinghua University, Beijing 100084, China); Li, Dongmei; Wang, Zhihua Source: VLSI Design, v 2013, 2013
Database: Compendex
44. Characteristics of GaN-based high-voltage LEDs compared to traditional high power LEDs
Zhan, Teng (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Yang; Ma, Jun; Tian, Ting; Li, Jing; Liu, Zhiqiang; Yi, Xiaoyan; Guo, Jinxia; Wang, Guohong; Li, Jinmin Source: IEEE Photonics Technology Letters, v 25, n 9, p 844-847, 2013
Database: Compendex
45. Feed-through cancellation of a MEMS filter using the difference method and analysis of the induced notch
Han, Guowei (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Si, Chaowei; Ning, Jin; Zhong, Weiwei; Sun, Guosheng; Zhao, Yongmei; Yang, Fuhua Source: Journal of Semiconductors, v 34, n 4, April 2013
Database: Compendex
46. DFB laser array monolithically integrated with MMI combiner and SOA
Ma, Li (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhu, Hong-Liang; Liang, Song; Wang, Bao-Jun; Zhang, Can; Zhao, Ling-Juan; Bian, Jing; Chen, Ming-Hua Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 24, n 3, p 424-428, March 2013 Language: Chinese
Database: Compendex
47. Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy
Su, X.J. (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China); Xu, K.; Ren, G.Q.; Wang, J.F.; Xu, Y.; Zeng, X.H.; Zhang, J.C.; Cai, D.M.; Zhou, T.F.; Liu, Z.H.; Yang, H. Source: Journal of Crystal Growth, v 372, p 43-48, 2013
Database: Compendex
48. Electron transport in a HgTe quantum spin Hall bar with periodic electric modulations
Lin, Liang-Zhong (SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, China); Cheng, F.; Zhang, D.; Lou, Wen-Kai; Zhang, Le-Bo Source: Solid State Communications, v 161, p 34-37, May 2013
Database: Compendex
49. EIT and MOLLOW spectrum in N-type four-level system
Li, Xiao-Li (College of Physical Science and Technology, Hebei University, Baoding 071002, China); Meng, Xu-Dong; Yang, Zi-Cai; Sun, Jiang Source: Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis, v 33, n 3, p 590-594, March 2013 Language: Chinese
Database: Compendex
50. Wavelength and mode-spacing tunable dual-mode distributed bragg reflector laser
Yu, Liqiang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China); Lu, Dan; Zhao, Lingjuan; Li, Yan; Ji, Chen; Pan, Jiaoqing; Zhu, Hongliang; Wang, Wei Source: IEEE Photonics Technology Letters, v 25, n 6, p 576-579, 2013
Database: Compendex
51. Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell
Li, Zhidong (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Xiao, Hongling; Wang, Xiaoliang; Wang, Cuimei; Deng, Qingwen; Jing, Liang; Ding, Jieqin; Hou, Xun Source: Physica B: Condensed Matter, v 414, p 110-114, April 1, 2013
Database: Compendex
52. Modulating lateral modes of semiconductor laser by photonic crystal structures
Zhang, Jianxin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Lei; Chen, Wei; Qu, Hongwei; Zheng, Wanhua Source: Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, v 42, n 1, p 69-72, January 2013 Language: Chinese
Database: Compendex
53. PDECO: Parallel differential evolution for clusters optimization
Chen, Zhanghui (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Jiang, Xiangwei; Li, Jingbo; Li, Shushen; Wang, Linwang Source: Journal of Computational Chemistry, v 34, n 12, p 1046-1059, May 5, 2013
Database: Compendex
54. Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar
Cheng, Fang (Department of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410004, China); Lin, L.Z.; Zhang, L.B.; Zhou, Guanghui Source: Journal of Applied Physics, v 113, n 5, February 7, 2013
Database: Compendex
55. Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching
Ma, Jun (Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Liancheng; Liu, Zhiqiang; Yuan, Guodong; Ji, Xiaoli; Ma, Ping; Wang, Junxi; Yi, Xiaoyan; Wang, Guohong; Li, Jinmin Source: Optics Express, v 21, n 3, p 3547-3556, February 11, 2013
Database: Compendex
56. Pattern classification neural network model based on homologue connectedness
Yang, Guo-Wei (Nanchang Hangkong University, Key Laboratory of Jiangxi Province for Image Processing and Pattern Recognition, Nanchang, Jiangxi 330063, China); Wang, Shou-Jue; Wei, Cheng-Bing; Cao, Wen-Yi Source: Tien Tzu Hsueh Pao/Acta Electronica Sinica, v 41, n 1, p 52-55, January 2013 Language: Chinese
Database: Compendex
57. XOR/XNOR directed logic circuit based on coupled-resonator-induced transparency
Tian, Yonghui (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Lei; Xu, Qianfan; Yang, Lin Source: Laser and Photonics Reviews, v 7, n 1, p 109-113, January 2013
Database: Compendex
58. Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes
Zhang, Yiyun (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zheng, Haiyang; Guo, Enqing; Cheng, Yan; Ma, Jun; Wang, Liancheng; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Guohong; Li, Jinmin Source: Journal of Applied Physics, v 113, n 1, January 7, 2013 |