Database: Compendex
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Database: Compendex 173. Broadband optical beam power splitter for wavelength dependent light circuits on silicon substrates Li, Zhiyong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Xing, Jiejiang; Yang, Biao; Yu, Yude Source: 2013 International Conference on Optoelectronics and Microelectronics, ICOM 2013, p 177-179, 2013, 2013 International Conference on Optoelectronics and Microelectronics, ICOM 2013 Database: Compendex 174. Demonstration of a vertical pin Ge-on-Si photodetector on a wet-etched Si recess Fang, Qing (Institute of Microelectronics, ASTAR (Agency of Science and Technology Research), 117685 Singapore, Singapore); Jia, Lianxi; Song, Junfeng; Lim, Andy E. J.; Tu, Xiaoguang; Luo, Xianshu; Yu, Mingbin; Lo, Guoqiang Source: Optics Express, v 21, n 20, p 23325-23330, October 7, 2013 Database: Compendex 175. Single-crystalline metal germanate nanowire-carbon textiles as binder-free, self-supported anodes for high-performance lithium storage Li, Wenwu (Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China); Wang, Xianfu; Liu, Bin; Xu, Jing; Liang, Bo; Luo, Tao; Luo, Sijun; Chen, Di; Shen, Guozhen Source: Nanoscale, v 5, n 21, p 10291-10299, November 7, 2013 Database: Compendex 176. Environmentally stable/self-powered ultraviolet photodetectors with high sensitivity Yang, Shengxue (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Tongay, Sefaattin; Li, Shu-Shen; Xia, Jian-Bai; Wu, Junqiao; Li, Jingbo Source: Applied Physics Letters, v 103, n 14, 2013 Database: Compendex 177. Theoretical study of transport property in InAsSb quantum well heterostructures Zhang, Yang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zhang, Yuwei; Guan, Min; Cui, Lijie; Wang, Chengyan; Zeng, Yiping Source: Journal of Applied Physics, v 114, n 15, October 21, 2013 Database: Compendex 178. Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth Li, Zengcheng (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Liu, Jianping; Feng, Meixin; Zhou, Kun; Zhang, Shuming; Wang, Hui; Li, Deyao; Zhang, Liqun; Zhao, Degang; Jiang, Desheng; Wang, Huaibing; Yang, Hui Source: Applied Physics Letters, v 103, n 15, October 7, 2013 Database: Compendex 179. Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness Le, L.C. (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Zhao, D.G.; Jiang, D.S.; Li, L.; Wu, L.L.; Chen, P.; Liu, Z.S.; Yang, J.; Li, X.J.; He, X.G.; Zhu, J.J.; Wang, H.; Zhang, S.M.; Yang, H. Source: Journal of Applied Physics, v 114, n 14, October 14, 2013 Database: Compendex 180. Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate stack technology for In0.7Ga0.3As and Ge1-xSnx CMOS Gong, Xiao (Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore, Singapore); Han, Genquan; Liu, Bin; Wang, Lanxiang; Wang, Wei; Yang, Yue; Kong, Eugene Yu-Jin; Su, Shaojian; Xue, Chunlai; Cheng, Buwen; Yeo, Yee-Chia Source: IEEE Transactions on Electron Devices, v 60, n 5, p 1640-1648, 2013 Database: Compendex 181. Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field Yue, Qu (College of Science, National University of Defense Technology, Changsha 410073, China); Shao, Zhengzheng; Chang, Shengli; Li, Jingbo Source: Nanoscale Research Letters, v 8, n 1, p 1-7, 2013 Database: Compendex 182. Design and fabrication of a high-performance evanescently coupled waveguide photodetector Liu, Shao-Qing (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yang, Xiao-Hong; Liu, Yu; Li, Bin; Han, Qin Source: Chinese Physics B, v 22, n 10, October 2013 Database: Compendex 183. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN Wu, L.L. (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Zhao, D.G.; Jiang, D.S.; Chen, P.; Le, L.C.; Li, L.; Liu, Z.S.; Zhang, S.M.; Zhu, J.J.; Wang, H.; Zhang, B.S.; Yang, H. Source: Semiconductor Science and Technology, v 28, n 10, October 2013 Database: Compendex 184. Enhanced optical absorption in nanohole-textured silicon thin-film solar cells with rear-located metal particles Chen, Yankun (Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Han, Weihua; Yang, Fuhua Source: Optics Letters, v 38, n 19, p 3973-3975, October 1, 2013 Database: Compendex 185. Boron nitride nanopores: Highly sensitive DNA single-molecule detectors Liu, Song (State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China); Lu, Bo; Zhao, Qing; Li, Ji; Gao, Teng; Chen, Yubin; Zhang, Yanfeng; Liu, Zhongfan; Fan, Zhongchao; Yang, Fuhua; You, Liping; Yu, Dapeng Source: Advanced Materials, v 25, n 33, p 4549-4554, September 6, 2013 Database: Compendex 186. Poly(3,4-ethylenedioxythiophene) (PEDOT) as interface material for improving electrochemical performance of microneedles array-based dry electrode Chen, Yuanfang (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Pei, Weihua; Chen, Sanyuan; Wu, Xian; Zhao, Shanshan; Wang, Huan; Chen, Hongda Source: Sensors and Actuators, B: Chemical, v 188, p 747-756, 2013 Database: Compendex 187. RF characteristic of MESFET on H-terminated DC arc jet CVD diamond film Liu, J.L. (School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China); Li, C.M.; Zhu, R.H.; Guo, J.C.; Chen, L.X.; Wei, J.J.; Hei, L.F.; Wang, J.J.; Feng, Z.H.; Guo, H.; Lv, F.X. Source: Applied Surface Science, v 284, p 798-803, November 1, 2013 Database: Compendex 188. A high average power single-stage picosecond double-clad fiber amplifier Sun, W. (Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yu, H.J.; Zhang, L.; Yan, S.L.; Dong, Z.Y.; Han, Z.H.; Hou, W.; Li, J.M.; Lin, X.C. Source: Laser Physics, v 23, n 9, September 2013 Database: Compendex 189. Low temperature operating In2-xNixO 3 sensors with high response and good selectivity for NO2 gas Chen, Yu (State Key Laboratory on Integrated Optoelectronics, Changchun 130012, China); Zhu, Linghui; Feng, Caihui; Liu, Juan; Li, Chao; Wen, Shanpeng; Ruan, Shengping Source: Journal of Alloys and Compounds, v 581, p 653-658, 2013 Database: Compendex 190. Study on proton irradiation induced defects in GaN thick film Zhang, Ming-Lan (College of Information Engineering, Hebei University of Technology, Tianjin 300401, China); Yang, Rui-Xia; Li, Zhuo-Xin; Cao, Xing-Zhong; Wang, Bao-Yi; Wang, Xiao-Hui Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 11, June 5, 2013 Language: Chinese Database: Compendex 191. Numerical computation of pyramidal quantum dots with band non-parabolicity Gong, Liang (Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, Ministry of Education, NanKai University, Tianjin 300457, China); Shu, Yong-Chun; Xu, Jing-Jun; Wang, Zhan-Guo Source: Superlattices and Microstructures, v 61, p 81-90, 2013 Database: Compendex 192. Kinetic mechanism of ZnO hexagonal single crystal slices on GaN/sapphire by a layer-by-layer growth mode Jia, Guozhi (Tianjin Institute of Urban Construction, Tianjin 300384, China); Lu, Xucen; Hao, Bingxue; Wang, Xionglong; Li, Yumei; Yao, Jianghong Source: RSC Advances, v 3, n 31, p 12826-12830, August 21, 2013 Database: Compendex 193. Cooling rate dependent lattice rotation in ge on insulators formed by rapid melt growth Wen, J.J. (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Z.; L. Li, L.; Li, C.; L. Xue, C.; Zuo, Y.H.; Li, C.B.; Wang, Q.M.; Cheng, B.W. Source: ECS Solid State Letters, v 2, n 9, p P73-P75, 2013 Database: Compendex 194. Linear optical pulse compression based on temporal zone plates Li, Bo (Institut National de la Recherche Scientifique - Energie, Matériaux et Télécommunications, Montréal, QC H5A 1K6, Canada); Li, Ming; Lou, Shuqin; Aza?a, José Source: Optics Express, v 21, n 14, p 16814-16830, July 15, 2013 Database: Compendex 195. Femtosecond laser pulse induced ultrafast demagnetization in Fe/GaAs thin films Gong, Y. (Physics and Astronomy, Hunter College of the City University of New York, New York, NY 10065, United States); Kutayiah, A.R.; Cevher, Z.; Zhang, X.H.; Zhao; Ren, Y.H. Source: IEEE Transactions on Magnetics, v 49, n 7, p 3199-3202, 2013 Database: Compendex 196. Ag@SiO2 core-shell nanoparticles on silicon nanowire arrays as ultrasensitive and ultrastable substrates for surface-enhanced Raman scattering Zhang, Chang Xing (State Key Laboratory of Chemical Resource Engineering, School of Science, Beijing University of Chemical Technology, Beijing 100029, China); Su, Lei; Chan, Yu Fei; Wu, Zheng Long; Zhao, Yong Mei; Xu, Hai Jun; Sun, Xiao Ming Source: Nanotechnology, v 24, n 33, August 23, 2013 Database: Compendex 197. Preparation and photoluminescence properties of reverse type-I ZnO/PbS core/shell nanorods He, Zhaohui (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Meng, Xiuqing Source: Journal of Materials Science: Materials in Electronics, v 24, n 9, p 3365-3370, September 2013 Database: Compendex 198. Effect of MoO3-doped PTCDA as buffer layer on the performance of CuPc/C60 solar cells Guan, Min (Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Cao, Guohua; Chu, Xinbo; Zhang, Yang; Liu, Xingfang; Zeng, Yiping Source: Physica Status Solidi (A) Applications and Materials Science, v 210, n 6, p 1178-1182, June 2013 Database: Compendex 199. Helicity dependent photocurrent enabled by unpolarized radiation in a GaAs/Al0.3Ga0.7As two-dimensional electron system Ma, Hui (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, China); Jiang, Chongyun; Liu, Yu; Yu, Jinling; Chen, Yonghai Source: Applied Physics Letters, v 102, n 21, 2013 Database: Compendex 200. Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating Tongay, Sefaattin (Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States); Zhou, Jian; Ataca, Can; Liu, Jonathan; Kang, Jeong Seuk; Matthews, Tyler S.; You, Long; Li, Jingbo; Grossman, Jeffrey C.; Wu, Junqiao Source: Nano Letters, v 13, n 6, p 2831-2836, June 12, 2013 Database: Compendex 201. Silicon-on-insulator-based adiabatic splitter with simultaneous tapering of velocity and coupling Xing, Jiejiang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Xiong, Kang; Xu, Hao; Li, Zhiyong; Xiao, Xi; Yu, Jinzhong; Yu, Yude Source: Optics Letters, v 38, n 13, p 2221-2223, July 1, 2013 Database: Compendex 202. Electro-optical response analysis of a 40 Gb/s silicon mach-zehnder optical modulator Ding, Jianfeng (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences (CAS), Beijing 100083, China); Ji, Ruiqiang; Zhang, Lei; Yang, Lin Source: Journal of Lightwave Technology, v 31, n 14, p 2434-2440, 2013, 0b00006481d60bcb Database: Compendex 203. Dislocation scattering in ZnMgO/ZnO heterostructures Sang, Ling (Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yang, Shao Yan; Liu, Gui Peng; Zhao, Gui Juan; Liu, Chang Bo; Gu, Cheng Yan; Wei, Hong Yuan; Liu, Xiang Lin; Zhu, Qin Sheng; Wang, Zhan Guo Source: IEEE Transactions on Electron Devices, v 60, n 6, p 2077-2079, 2013 Database: Compendex 204. Four distributed feedback laser array integrated with multimode- interference and semiconductor optical amplifier Ma, Li (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhu, Hong-Liang; Liang, Song; Zhao, Ling-Juan; Chen, Ming-Hua Source: Chinese Physics B, v 22, n 5, May 2013 Database: Compendex 205. Sensitive refractive index sensing with good operation angle polarization tolerance using a plasmonic split-ring resonator array with broken symmetry Liu, Jie-Tao (Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China); Xu, Bin-Zong; Xu, Yun; Wei, Xin; Song, Guo-Feng Source: Journal of Physics D: Applied Physics, v 46, n 19, May 15, 2013 Database: Compendex 206. Optical transition of the charged excitons in InAs single quantum dots Li, Wen-Sheng (College of Chemical Engineering, Tongliao Professional Education College, Tongliao 028000, China); Sun, Bao-Quan Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 4, February 20, 2013 Language: Chinese Database: Compendex 207. Sulfur-doped black silicon formed by metal-assist chemical etching and ion implanting Liu, Kong (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Sciences, Beijing, 100083, China); Qu, Shengchun; Zhang, Xinhui; Tan, Furui; Bi, Yu; Lu, Shudi; Wang, Zhanguo Source: Applied Physics A: Materials Science and Processing, p 1-4, 2013 Article in Press Database: Compendex 208. Tailoring magnetism of multifunctional MnxGa films with giant perpendicular anisotropy Zhu, L.J. (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Pan, D.; Nie, S.H.; Lu, J.; Zhao, J.H. Source: Applied Physics Letters, v 102, n 13, April 1, 2013 Database: Compendex 209. Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth Wen, Juanjuan (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Zhi; Li, Leliang; Li, Chong; Xue, Chunlai; Zuo, Yuhua; Li, Chuanbo; Wang, Qiming; Cheng, Buwen Source: Journal of Applied Physics, v 113, n 14, April 14, 2013 Database: Compendex 210. Raman spectra analysis of GaN:Er films prepared by ion implantation Tao, Dong-Yan (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Chao; Yin, Chun-Hai; Zeng, Yi-Ping Source: Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis, v 33, n 3, p 699-703, March 2013 Language: Chinese Database: Compendex 211. Optical anisotropy and blue-shift phenomenon in tetragonal BiFeO 3 Dong, Huafeng (Department of Physics, Tsinghua University, Beijing 100084, China); Liu, Hongfei; Wang, Shanying Source: Journal of Physics D: Applied Physics, v 46, n 13, April 3, 2013 Database: Compendex 212. Spin and orbital splitting in ferromagnetic contacted single wall carbon nanotube devices Wang, K.Y. (SKLSM, Institute of Semiconductors, P. O. Box 912, Beijing 100083, China); Blackburn, A.M.; Wang, H.F.; Wunderlich, J.; Williams, D.A. Source: Applied Physics Letters, v 102, n 9, March 4, 2013 Database: Compendex 213. Electron spin dynamics of ferromagnetic Ga1-x Mnx As across the insulator-to-metal transition Yue, Han (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zhao, Chunbo; Gao, Haixia; Wang, Hailong; Yu, Xuezhe; Zhao, Jianhua; Zhang, Xinhui Source: Applied Physics Letters, v 102, n 10, March 11, 2013 Database: Compendex 214. A lower power reconfigurable multi-band transceiver for short-range communication Zhang, Lingwei (Institute of Microelectronics, Tsinghua University, Beijing 100084, China); Chi, Baoyong; Qi, Nan; Liu, Liyuan; Jiang, Hanjun; Wang, Zhihua Source: Journal of Semiconductors, v 34, n 3, March 2013 Database: Compendex 215. Ultra-compact and fabrication-tolerant polarization rotator based on a bend asymmetric-slab waveguide Cao, Tongtong (State Key Laboratory on Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Chen, Shaowu; Fei, Yonghao; Zhang, Libin; Xu, Qing-Yang Source: Applied Optics, v 52, n 5, p 990-996, February 10, 2013 Database: Compendex 216. Annealing effect on magnetic anisotropy in ultrathin (Ga,Mn)As Li, Yan-Yong (State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Hua-Feng; Cao, Yu-Fei; Wang, Kai-You Source: Chinese Physics B, v 22, n 2, February 2013 Database: Compendex 217. Electron spin dynamics study of bulk p-GaAs: The screening effect Zhao, Chunbo (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yan, Tengfei; Ni, Haiqiao; Niu, Zhichuan; Zhang, Xinhui Source: Applied Physics Letters, v 102, n 1, January 7, 2013 Database: Compendex 218. Ag nanoparticles preparation and their light trapping performance Bai, Yiming (School of Renewable Energy Engineering, North China Electric Power University, Beijing 102206, China); Wang, Jun; Yin, Zhigang; Chen, Nuofu; Zhang, Xingwang; Fu, Zhen; Yao, Jianxi; Li, Ning; He, Haiyang; Guli, Mina Source: Science China Technological Sciences, v 56, n 1, p 109-114, January 2013, Special Topic on NanoScience and Technology Database: Compendex 219. Fiber optic 3-component seismometer Jiang, Dongshan (Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Science, No. 35, Qing hua East Road, Hai dian District Beijing, 100083, China); Zhang, Wentao; Li, Fang Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8924, 2013, Fourth Asia Pacific Optical Sensors Conference Database: Compendex 220. Low temperature Sn-rich Au - Sn wafer-level bonding Fang, Zhiqiang (Research Center of Engineering for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Mao, Xu; Yang, Jinling; Yang, Fuhua Source: Journal of Semiconductors, v 34, n 10, October 2013 Database: Compendex 221. Recent progress in perpendicularly magnetized Mn-based binary alloy films Zhu, Li-Jun (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Nie, Shuai-Hua; Zhao, Jian-Hua Source: Chinese Physics B, v 22, n 11, November 2013 Database: Compendex 222. High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector Li, Chong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xue, Chun-Lai; Li, Chuan-Bo; Liu, Zhi; Cheng, Bu-Wen; Wang, Qi-Ming Source: Chinese Physics B, v 22, n 11, November 2013 Database: Compendex 223. Enhanced 1524-nm emission from ge quantum dots in a modified photonic crystal L3 cavity Zhang, Yong (Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China); Zeng, Cheng; Li, Danping; Huang, Zengzhi; Li, Kezheng; Yu, Jinzhong; Li, Juntao; Xu, Xuejun; Maruizumi, Takuya; Xia, Jinsong Source: IEEE Photonics Journal, v 5, n 5, 2013 Database: Compendex 224. Photovoltaic performance optimization of methyl 4-[6,6]-C61-benzoate based polymer solar cells with thermal annealing approach Chi, Dan (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Chao; Qu, Shengchun; Zhang, Zhi-Guo; Li, Yongjun; Li, Yuliang; Wang, Jizheng; Wang, Zhanguo Source: Synthetic Metals, v 181, p 117-122, 2013 Database: Compendex 225. AlGaN/GaN Schottky diode fabricated by au free process Jia, Lifang (Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academic of Science, Beijing 100083, China); Yan, Wei; Fan, Zhongchao; He, Zhi; Wang, Xiaodong; Wang, Guohong; Yang, Fuhua Source: IEEE Electron Device Letters, v 34, n 10, p 1235-1237, 2013 Database: Compendex 226. Structural, morphological and magnetic properties of AlGaN thin films co-implanted with Cr and Sm ions Gao, Xingguo (School of Science, Shandong Polytechnic University, Jinan 250353, China); Liu, Chao; Yin, Chunhai; Sun, Lili; Tao, Dongyan; Yang, Cheng; Man, Baoyuan Source: Journal of Magnetism and Magnetic Materials, v 343, p 65-68, 2013 Database: Compendex 227. High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions Zheng, Liu (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Feng; Liu, Sheng-Bei; Dong, Lin; Liu, Xing-Fang; Fan, Zhong-Chao; Liu, Bin; Yan, Guo-Guo; Wang, Lei; Zhao, Wan-Shun; Sun, Guo-Sheng; He, Zhi; Yang, Fu-Hua Source: Chinese Physics B, v 22, n 9, September 2013 Database: Compendex 228. Polarization properties of Rayleigh backscattering with a high degree of coherence in single-mode fibers Xu, Tuanwei (Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Ren, Meizhen; Li, Fang Source: Optik, v 124, n 24, p 6790-6794, December 2013 Database: Compendex 229. All-metal optical fiber accelerometer with low transverse sensitivity for seismic monitoring Jiang, Dongshan (Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Wentao; Li, Fang Source: IEEE Sensors Journal, v 13, n 11, p 4556-4560, 2013 Database: Compendex 230. Abnormal low-temperature behavior of a continuous photocurrent in Bi 2S3 nanowires Li, Renxiong (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Yue, Qu; Wei, Zhongming Source: Journal of Materials Chemistry C, v 1, n 37, p 5866-5871, October 7, 2013 Database: Compendex 231. A novel analytical method for designing microelectromechanical filters Zhao, H. (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Luo, W.; Yang, J.L.; Yang, F.H. Source: Key Engineering Materials, v 562-565, p 1281-1284, 2013, Micro-Nano Technology XIV |