Database: Compendex
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Database: Compendex 401. Defect revelation and evaluation of 4H silicon carbide by optimized molten KOH etching method Dong, Lin (Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Li, Xiguang; Sun, Guosheng; Wang, Zhanguo Source: Materials Science Forum, v 740-742, p 243-246, 2013, Silicon Carbide and Related Materials 2012, ECSCRM 2012 Database: Compendex 402. The fabrication of large-area upgraded metallurgical grade multi-crystalline silicon solar cells in a production line Chen, Teng (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese cademy of Sciences, Beijing, 100083, China); Zhao, Youwen; Dong, Zhiyuan; Wang, Jun; Liu, Tong; Xie, Hui Source: Materials Science Forum, v 743-744, p 863-869, 2013, Energy and Environment Materials Database: Compendex 403. High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization Xiao, Xi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, China); Xu, Hao; Li, Xianyao; Li, Zhiyong; Chu, Tao; Yu, Yude; Yu, Jinzhong Source: Optics Express, v 21, n 4, p 4116-4125, February 25, 2013 Database: Compendex 404. Improving the optical absorption of BiFeO3 for photovoltaic applications via uniaxial compression or biaxial tension Dong, Huafeng (Department of Physics, Tsinghua University, Beijing 100084, China); Wu, Zhigang; Wang, Shanying; Duan, Wenhui; Li, Jingbo Source: Applied Physics Letters, v 102, n 7, February 18, 2013 Database: Compendex 405. First-principles study of atomic hydrogen adsorption and initial hydrogenation of Zr(0001) surface Zhang, Peng (Department of Nuclear Science and Technology, Xi'An Jiaotong University, Xi'an 710049, China); Wang, Shuangxi; Zhao, Jian; He, Chaohui; Zhao, Yaolin; Zhang, Ping Source: Journal of Applied Physics, v 113, n 1, January 7, 2013 Database: Compendex 406. Anisotropic characteristics and morphological control of silicon nanowires fabricated by metal-assisted chemical etching Liu, Kong (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China); Qu, Shengchun; Zhang, Xinhui; Wang, Zhanguo Source: Journal of Materials Science, v 48, n 4, p 1755-1762, February 2013 Database: Compendex 407. Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for silicon solar cells Fan, Yujie (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. 35A Qinghua East Road, Haidian District, Beijing 100083, China); Han, Peide; Liang, Peng; Xing, Yupeng; Ye, Zhou; Hu, Shaoxu Source: Applied Surface Science, v 264, p 761-766, January 1, 2013 Database: Compendex 408. A 55 nm CMOS ΔΣ fractional-N frequency synthesizer for WLAN transceivers with low noise filters Chen, Mingyi (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Chu, Xiaojie; Yu, Peng; Yan, Jun; Shi, Yin Source: Journal of Semiconductors, v 34, n 10, October 2013 Database: Compendex 409. Design of polarization-independent adiabatic splitters fabricated on silicon-on-insulator substrates Xing, Jiejiang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Li, Zhiyong; Yu, Yude; Yu, Jinzhong Source: Optics Express, v 21, n 22, p 26729-26734, November 4, 2013 Database: Compendex 410. 760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation Wang, H.L. (School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN, United Kingdom); Kong, L.; Bajek, D.; Haggett, S.; Wang, X.L.; Cui, B.F.; Pan, J.Q.; Ding, Y.; Cataluna, M.A. Source: CLEO: Science and Innovations, CLEO_SI 2013, p JTh2A.20, 2013, CLEO: Science and Innovations, CLEO_SI 2013 Database: Compendex 411. Reduced defect density in microcrystalline silicon by hydrogen plasma treatment Li, Jingyan (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zeng, Xiangbo; Li, Hao; Xie, Xiaobing; Yang, Ping; Xiao, Haibo; Zhang, Xiaodong; Wang, Qiming Source: Journal of Semiconductors, v 34, n 10, October 2013 Database: Compendex 412. Selective silencing of the electrical properties of metallic single-walled carbon nanotubes by 4-nitrobenzenediazonium tetrafluoroborate Wang, Chao (Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, China); Xu, Wenya; Zhao, Jianwen; Lin, Jian; Chen, Zheng; Cui, Zheng Source: Journal of Materials Science, p 1-9, 2013 Article in Press Database: Compendex 413. Low cross-talk 2 × 2 silicon electro-optic switch matrix with a double-gate configuration Xing, Jiejiang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Li, Zhiyong; Yu, Yude; Yu, Jinzhong Source: Optics Letters, v 38, n 22, p 4774-4776, November 15, 2013 Database: Compendex 414. A compact neural recording interface based on silicon microelectrode Han, Jianqiang (State Key Laboratory on Integrated Optoelectronic, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Xu; Pei, Weihua; Gui, Qiang; Liu, Ming; Chen, Hongda Source: Science China Technological Sciences, v 56, n 11, p 2808-2813, November 2013, Special Topic on Nano Energy and Piezotronics (2615-2657) Special Topic on Space Sciences (2658-2689) Database: Compendex 415. Synthesis, properties, and top-gated metal-oxide-semiconductor field-effect transistors of p-type GaSb nanowires Xu, H.Q. (State Key Lab for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China); Xu, Guangwei; Huang, Shaoyun; Wang, Xiaoye; Yu, Bin; Zhang, Hui; Yang, Tao; Dai, Lun Source: RSC Advances, v 3, n 43, p 19834-19839, November 21, 2013 Database: Compendex 416. Controllable synthesis of ZnO nanostructures on the Si substrate by a hydrothermal route Dong, Jing-Jing (School of Science, China University of Geosciences, Beijing 100083, China); Zhen, Chun-Yang; Hao, Hui-Ying; Xing, Jie; Zhang, Zi-Li; Zheng, Zhi-Yuan; Zhang, Xing-Wang Source: Nanoscale Research Letters, v 8, n 1, p 1-7, 2013 Database: Compendex 417. Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(1 0 0) by molecular beam epitaxy Su, Shaojian (College of Information Science and Engineering, Huaqiao University, Xiamen 361021, Fujian Province, China); Zhang, Dongliang; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen Source: Superlattices and Microstructures, v 64, p 543-551, 2013 Database: Compendex 418. Spin-based effects and transport properties of a spin-orbit-coupled hexagonal optical lattice Zhu, G.-B. (Department of Physics, Capital Normal University, Beijing 100048, China); Sun, Q.; Zhang, Y.-Y.; Chan, K.S.; Liu, W.-M.; Ji, A.-C. Source: Physical Review A - Atomic, Molecular, and Optical Physics, v 88, n 2, August 13, 2013 Database: Compendex 419. Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2 Zhao, Weijie (Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore); Ghorannevis, Zohreh; Amara, Kiran Kumar; Pang, Jing Ren; Toh, Minglin; Zhang, Xin; Kloc, Christian; Tan, Ping Heng; Eda, Goki Source: Nanoscale, v 5, n 20, p 9677-9683, October 21, 2013 Database: Compendex 420. High-speed direct modulation unidirectional emission microring lasers Lv, Xiao-Meng (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Huang, Yong-Zhen; Zou, Ling-Xiu; Long, Heng; Xiao, Jin-Long; Yang, Yue-De; Du, Yun Source: Electronics Letters, v 49, n 20, p 1290-1291, September 26, 2013 Database: Compendex 421. The progress of silicon-based grating couplers Yang, Biao (National Key Laboratory for Optoelectronic Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Zhi-Yong; Xiao, Xi; Anastasia, Nemkova; Yu, Jin-Zhong; Yu, Yu-De Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 18, September 20, 2013 Language: Chinese Database: Compendex 422. Design of a silicon Mach-Zehnder modulator with a U-type PN junction Cao, Tongtong (State Key Laboratory on Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Fei, Yonghao; Zhang, Libin; Cao, Yanmei; Chen, Shaowu Source: Applied Optics, v 52, n 24, p 5941-5948, August 20, 2013 Database: Compendex 423. Chaos synchronization of two light-emitting diode systems with complex dynamics via adaptive neural control Han, Chun Xiao (Tianjin Key Laboratory of Information Sensing and Intelligent Control, Tianjin University of Technology and Education, Tianjin, 300222, China); Li, Xiao Qin; Yang, Ting Ting; Li, Rui Xue Source: Applied Mechanics and Materials, v 344, p 170-173, 2013, Advanced Research on Applied Mechanics, Mechatronics and Intelligent System Database: Compendex 424. Ge/Si quantum dots thin film solar cells Liu, Zhi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhou, Tianwei; Li, Leliang; Zuo, Yuhua; He, Chao; Li, Chuanbo; Xue, Chunlai; Cheng, Buwen; Wang, Qiming Source: Applied Physics Letters, v 103, n 8, August 19, 2013 Database: Compendex 425. Tunable liquid crystal Fabry-Perot hyperspectral imaging detectors in mid-infrared Fu, Anbang (National Key Laboratory of Science and Technology on Multispectral Information Processing, Wuhan 430074, China); Zhang, Huaidong; Zhang, Xinyu; Sang, Hongshi; Ji, An; Xie, Changsheng Source: Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, v 42, n 7, p 1853-1857, July 2013 Database: Compendex 426. High power laser diode with non-absorbing windows fabricated by quantum well intermixing Lin, T. (School of Automation and Information Engineering, Xi'an University of Technology, P.O. Box 710048, Xi'an, China); Zhang, H.Q.; Li, C.; Ma, X.J.; Lin, N.; Zheng, K.; Ma, X.Y. Source: International Journal of Nanomanufacturing, v 9, n 3-4, p 368-374, 2013, Special Issue on New Energy Materials and Nanotechnology - Part I Database: Compendex 427. Synthesis of WO3 nanostructures and their ultraviolet photoresponse properties Huo, Nengjie (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yang, Shengxue; Wei, Zhongming; Li, Jingbo Source: Journal of Materials Chemistry C, v 1, n 25, p 3999-4007, July 7, 2013 Database: Compendex 428. Enhanced optical property of ingan light-emitting diodes with SiO 2 nano-bowl photonic crystal by nanosphere lithography Zheng, Haiyang (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wu, Kui Source: ECS Solid State Letters, v 2, n 7, p Q51-Q53, 2013 Database: Compendex 429. Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor Yu, Ying-Xia (School of Physics, Shandong University, Jinan 250100, China); Lin, Zhao-Jun; Luan, Chong-Biao; Wang, Yu-Tang; Chen, Hong; Wang, Zhan-Guo Source: Chinese Physics B, v 22, n 6, June 2013 Database: Compendex 430. The research of the perpendicular magnetic anisotropy in CoFeB/AlOx/Ta and AlOx/CoFeB/Ta structures Chen, Xi (The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Hou-Fang; Han, Xiu-Feng; Ji, Yang Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 13, July 5, 2013 Language: Chinese Database: Compendex 431. Product level accelerated lifetime test for indoor LED luminaires Koh, Sau (Delft Institute of Microsystems and Nanoelectronics (Dimes), Delft University of Technology, Netherlands); Yuan, Cadmus; Sun, Bo; Li, Bob; Fan, Xuejun; Zhang, G.Q. Source: 2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2013, 2013, 2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2013 Database: Compendex 432. The fabrication of GaN-based nanorod light-emitting diodes with multilayer graphene transparent electrodes Li, Zhi (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Kang, Junjie; Zhang, Yiyun; Liu, Zhiqiang; Wang, Liancheng; Lee, Xiao; Li, Xiao; Yi, Xiaoyan; Zhu, Hongwei; Wang, Guohong Source: Journal of Applied Physics, v 113, n 23, June 21, 2013 Database: Compendex 433. Comparisons of typical nonlinear states in single- and dual-beam optically injected semiconductor lasers Qi, Xiaoqiong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xie, Liang; Liu, Yuping Source: Optics Communications, v 309, p 163-169, 2013 Database: Compendex 434. High-brightness diode laser arrays integrated with a phase shifter designed for single-lobe far-field pattern Liu, Lei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083, China); Zhang, Jianxin; Ma, Shaodong; Qi, Aiyi; Qu, Hongwei; Zhang, Yejin; Zheng, Wanhua Source: Optics Letters, v 38, n 15, p 2770-2772, August 1, 2013 Database: Compendex 435. Enhanced photoluminescence from porous silicon nanowire arrays Zhang, Chunqian (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Chuanbo; Liu, Zhi; Zheng, Jun; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming Source: Nanoscale Research Letters, v 8, n 1, p 1-4, 2013 Database: Compendex 436. Interface and transport properties of metallization contacts to flat and wet-etching roughed N-polar n-type GaN Wang, Liancheng (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Zhiqiang; Guo, Enqing; Yang, Hua; Yi, Xiaoyan; Wang, Guohong Source: ACS Applied Materials and Interfaces, v 5, n 12, p 5797-5803, June 26, 2013 Database: Compendex 437. Bidirectional grating coupler based optical modulator for low-loss Integration and low-cost fiber packaging Zhang, Zanyun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Huang, Beiju; Zheng, Zan; Cheng, Chuantong; Chen, Hongda Source: Optics Express, v 21, n 12, p 14202-14214, June 2013 Database: Compendex 438. 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates Dong, Peng (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yan, Jianchang; Wang, Junxi; Zhang, Yun; Geng, Chong; Wei, Tongbo; Cong, Peipei; Zhang, Yiyun; Zeng, Jianping; Tian, Yingdong; Sun, Lili; Yan, Qingfeng; Li, Jinmin; Fan, Shunfei; Qin, Zhixin Source: Applied Physics Letters, v 102, n 24, June 17, 2013 Database: Compendex 439. Fabrication of strongly adherent platinum black coatings on microelectrodes array Tang, RongYu (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Pei, WeiHua; Chen, SanYuan; Zhao, Hui; Chen, YuanFang; Han, Yao; Wang, ChunLan; Chen, HongDa Source: Science China Information Sciences, p 1-11, 2013 Article in Press Database: Compendex 440. Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect Li, Ya-Ming (Institute State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China); Liu, Zhi; Xue, Chun-Lai; Li, Chuan-Bo; Cheng, Bu-Wen; Wang, Qi-Ming Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 11, June 5, 2013 Language: Chinese Database: Compendex 441. Fabrication and characterization of an SOI MEMS gyroscope Zhong, Weiwei (Research Center of Engineering for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Han, Guowei; Si, Chaowei; Ning, Jin; Yang, Fuhua Source: Journal of Semiconductors, v 34, n 6, June 2013 Database: Compendex 442. Electro-optic directed XNOR logic gate based on U-shaped waveguides and microring resonators Zhu, Weiwei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Tian, Yonghui; Zhang, Lei; Yang, Lin Source: IEEE Photonics Technology Letters, v 25, n 14, p 1305-1308, 2013 Database: Compendex 443. Magnetic silicon nanotube: Role of encapsulated europium atoms Li, Jing (Department of Physics, Hebei Advanced Thin Film Laboratory, Hebei Normal University, Shijiazhuang 050024, Hebei, China); Wang, Jing; Zhao, Hui-Yan; Liu, Ying Source: Journal of Physical Chemistry C, v 117, n 20, p 10764-10769, May 23, 2013 Database: Compendex 444. The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVD Zhu, Shaoxin (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yan, Jianchang; Zeng, Jianping; Zhang, Ning; Si, Zhao; Dong, Peng; Li, Jinmin; Wang, Junxi Source: Journal of Semiconductors, v 34, n 5, May 2013 Database: Compendex 445. 19 μm quantum cascade infrared photodetectors Zhai, Shen-Qiang (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Liu, Jun-Qi; Wang, Xue-Jiao; Zhuo, Ning; Liu, Feng-Qi; Wang, Zhan-Guo; Liu, Xi-Hui; Li, Ning; Lu, Wei Source: Applied Physics Letters, v 102, n 19, May 13, 2013 Database: Compendex 446. Synthesis of chalcopyrite CuIn1-xGaxSe2 alloys for photovoltaic application by a novel melting method Chen, Teng (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhao, Youwen; Dong, Zhiyuan; Yang, Jun; Liu, Tong Source: Materials Letters, v 106, p 52-55, 2013 Database: Compendex 447. A 1.55-μm laser array monolithically integrated with an MMI combiner Ma, Li (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhu, Hongliang; Liang, Song; Wang, Baojun; Zhang, Can; Zhao, Lingjuan; Bian, Jing; Chen, Minghua Source: Journal of Semiconductors, v 34, n 4, April 2013 Database: Compendex 448. Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition Wu, Liang-Liang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhao, De-Gang; Li, Liang; Le, Ling-Cong; Chen, Ping; Liu, Zong-Shun; Jiang, De-Sheng Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 8, April 20, 2013 Language: Chinese Database: Compendex 449. Wavelength evolution of long-period fiber gratings in a water environment Zhao, Qiang (National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China); Qu, Yi; Wang, Yong-Jie; Li, Fang Source: Applied Optics, v 52, n 11, p 2478-2483, April 10, 2013 Database: Compendex 450. Statistical properties of Rayleigh backscattered light in single-mode fibers caused by a highly coherent laser Ren, Meizhen (Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xu, Tuanwei; Zhang, Faxiang; Li, Fang; Liu, Yuliang Source: Zhongguo Jiguang/Chinese Journal of Lasers, v 40, n 1, January 2013 Language: Chinese Database: Compendex 451. Spin-polarized injection into a p-type GaAs layer from a Co2MnAl injector Yuan, Si-Peng (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Shen, Chao; Zheng, Hou-Zhi; Liu, Qi; Wang, Li-Guo; Meng, Kang-Kang; Zhao, Jian-Hua Source: Chinese Physics B, v 22, n 4, April 2013 Database: Compendex 452. Modulation of thermal conductivity in kinked silicon nanowires: Phonon interchanging and pinching effects Jiang, Jin-Wu (Institute of Structural Mechanics, Bauhaus-University Weimar, Marienstr. 15, D-99423 Weimar, Germany); Yang, Nuo; Wang, Bing-Shen; Rabczuk, Timon Source: Nano Letters, v 13, n 4, p 1670-1674, April 10, 2013 Database: Compendex 453. All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering Yu, Xuezhe (State Key Laboratory of Superlattices and Microstructrues, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Wang, Hailong; Pan, Dong; Zhao, Jianhua; Misuraca, Jennifer; Von Molnár, Stephan; Xiong, Peng Source: Nano Letters, v 13, n 4, p 1572-1577, April 10, 2013 Database: Compendex 454. Temperature dependence of anisotropic mode splitting induced by birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser studied by reflectance difference spectroscopy Yu, Jinling (College of Physics and Information Engineering, Institute of Micro/Nano Devices and Solar Cells, Fuzhou University, Fuzhou, Fujian Province 350108, China); Chen, Yonghai; Cheng, Shuying; Lai, Yunfeng Source: Applied Optics, v 52, n 5, p 1035-1040, February 10, 2013 Database: Compendex 455. High-bandwidth and high-responsivity top-illuminated germanium photodiodes for optical interconnection Li, Chong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xue, Chunlai; Liu, Zhi; Cheng, Buwen; Li, Chuanbo; Wang, Qiming Source: IEEE Transactions on Electron Devices, v 60, n 3, p 1183-1187, 2013 Database: Compendex 456. Surface plasmon resonance enhanced ellipsometric analysis for monitoring of cobalt electrochemical reaction in solution Wang, Zhenzhen (State Key Laboratory Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Wei; Wang, Chunxia; Kan, Qiang; Chen, She; Chen, Hongda Source: Sensors and Actuators, B: Chemical, v 181, p 221-226, 2013 Database: Compendex 457. In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots Li, Mi-Feng (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Yu, Ying; He, Ji-Fang; Wang, Li-Juan; Zhu, Yan; Shang, Xiang-Jun; Ni, Hai-Qiao; Niu, Zhi-Chuan Source: Nanoscale Research Letters, v 8, n 1, p 1-6, 2013 Database: Compendex |