Database: Compendex

Database: Compendex

288. Carrier-induced silicon waveguide Bragg grating filter based on ion implantation

Fang, Qing (Institute of Microelectronics, A STAR, 11Science Park Road, Science Park II, Singapore 117685, Singapore); Song, Junfeng; Tu, Xiaoguang; Jia, Lianxi; Luo, Xianshu; Yu, Mingbin; Lo, Guo Qiang Source: 2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference, OFC/NFOEC 2013, 2013, 2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference, OFC/NFOEC 2013

Database: Compendex

289. Improved performance of highly scaled AlGaN/GaN high-electron-mobility transistors using an AlN back barrier

Kong, Xin (Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China); Wei, Ke; Liu, Guoguo; Liu, Xinyu; Wang, Cuimei; Wang, Xiaoliang Source: Applied Physics Express, v 6, n 5, May 2013

Database: Compendex

290. Pyramid array InGaN/GaN core-shell light emitting diodes with homogeneous multilayer graphene electrodes

Kang, Junjie (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Zhi; Li, Hongjian; Liu, Zhiqiang; Li, Xiao; Yi, Xiaoyan; Ma, Ping; Zhu, Hongwei; Wang, Guohong Source: Applied Physics Express, v 6, n 7, July 2013

Database: Compendex

291. Fabrication of volcano-shaped nano-patterned sapphire substrates using colloidal self-assembly and wet chemical etching

Geng, Chong (Department of Chemistry, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China); Zheng, Lu; Fang, Huajing; Yan, Qingfeng; Wei, Tongbo; Hao, Zhibiao; Wang, Xiaoqing; Shen, Dezhong Source: Nanotechnology, v 24, n 33, August 23, 2013

Database: Compendex

292. Experimental investigation of quantum Simpson's paradox

Li, Yu-Long (Key Laboratory of Quantum Information, University of Science and Technology of China, CAS, Hefei 230026, China); Tang, Jian-Shun; Wang, Yi-Tao; Wu, Yu-Chun; Han, Yong-Jian; Li, Chuan-Feng; Guo, Guang-Can; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan Source: Physical Review A - Atomic, Molecular, and Optical Physics, v 88, n 1, July 24, 2013

Database: Compendex

293. Identifying different mechanisms of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two dimensional electron gas by photo-modulation technique

Ma, Hui (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Jiang, Chongyun; Liu, Yu; Zhu, Laipan; Qin, Xudong; Chen, Yonghai Source: Applied Physics Letters, v 102, n 23, June 10, 2013

Database: Compendex

294. Interplay between edge and bulk states in silicene nanoribbon

An, Xing-Tao (School of Sciences, Hebei University of Science and Technology, Shijiazhuang, Hebei 050018, China); Zhang, Yan-Yang; Liu, Jian-Jun; Li, Shu-Shen Source: Applied Physics Letters, v 102, n 21, 2013

Database: Compendex

295. The numerical-aperture-dependent optical contrast and thickness determination of ultrathin flakes of two-dimensional atomic crystals: A case of graphene multilayers

Han, Wen-Peng (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors Chinese Academy of Sciences, Beijing 100083, China); Shi, Yan-Meng; Li, Xiao-Li; Luo, Shi-Qiang; Lu, Yan; Tan, Ping-Heng Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 11, June 5, 2013 Language: Chinese

Database: Compendex

296. Ferromagnetic interfacial interaction and the proximity effect in a Co 2FeAl/(Ga,Mn)As Bilayer

Nie, S.H. (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Chin, Y.Y.; Liu, W.Q.; Tung, J.C.; Lu, J.; Lin, H.J.; Guo, G.Y.; Meng, K.K.; Chen, L.; Zhu, L.J.; Pan, D.; Chen, C.T.; Xu, Y.B.; Yan, W.S.; Zhao, J.H. Source: Physical Review Letters, v 111, n 2, July 9, 2013

Database: Compendex

297. Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting

Wang, Xiyuan (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Huang, Yongguang; Liu, Dewei; Zhu, Xiaoning; Cui, Xiao; Zhu, Hongliang Source: Journal of Semiconductors, v 34, n 6, June 2013

Database: Compendex

298. Far-field pattern simulation and measurement for unidirectional-emission circular microlasers

Huang, Yong-Zhen (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Lv, Xiao-Meng; Long, Heng; Zou, Ling-Xiu; Yao, Qi-Feng; Yang, Yue-De; Jin, Xin; Tang, Ming-Ying; Xiao, Jin-Long; Du, Yun Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8600, 2013, Laser Resonators, Microresonators, and Beam Control XV

Database: Compendex

299. Multi-channel DFB laser arrays fabricated by SAG technology

Zhang, Can (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Liang, Song; Zhu, Hongliang; Ma, Li; Wang, Baojun; Ji, Chen; Wang, Wei Source: Optics Communications, v 300, p 230-235, 2013

Database: Compendex

300. Intrinsic photoinduced anomalous Hall effect in insulating GaAs/AlGaAs quantum wells at room temperature

Yu, J.L. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Chen, Y.H.; Liu, Y.; Jiang, C.Y.; Ma, H.; Zhu, L.P.; Qin, X.D. Source: Applied Physics Letters, v 102, n 20, May 20, 2013

Database: Compendex

301. Performance analysis of vertical multi-junction solar cell with front surface diffusion for high concentration

Xing, Yupeng (State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Han, Peide; Wang, Shuai; Fan, Yujie; Liang, Peng; Ye, Zhou; Li, Xinyi; Hu, Shaoxu; Lou, Shishu; Zhao, Chunhua; Mi, Yanhong Source: Solar Energy, v 94, p 8-18, August 2013

Database: Compendex

302. The quantification of quantum nonlocality by characteristic function

Wen, Wei (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China) Source: Science China: Physics, Mechanics and Astronomy, p 1-5, 2013

Article in Press

Database: Compendex

303. Dielectric and barrier thickness fluctuation scattering in Al 2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

Ji, Dong (Department of Physics, Beijing Jiaotong University, Beijing 100044, China); Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo Source: Thin Solid Films, v 534, p 655-658, May 1, 2013

Database: Compendex

304. Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature

Hu, Shaoxu (State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Han, Peide; Mi, Yanhong; Xing, Yupeng; Liang, Peng; Fan, Yujie Source: Materials Science in Semiconductor Processing, v 16, n 3, p 987-991, June 2013

Database: Compendex

305. Splitting of electromagnetically induced transparency window and appearing of gain due to radio frequency field

Li, Xiao-Li (College of Physical Science and Technology, Hebei University, Baoding 071002, China); Shang, Ya-Xuan; Sun, Jiang Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 6, March 20, 2013 Language: Chinese

Database: Compendex

306. Multilayer silver nanoparticles for light trapping in thin film solar cells

Shi, Yanpeng (Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Xiaodong; Liu, Wen; Yang, Tianshu; Xu, Rui; Yang, Fuhua Source: Journal of Applied Physics, v 113, n 17, May 7, 2013

Database: Compendex

307. Influence of strain and electric field on the properties of silicane

Cheng, Gang (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Peng-Fei; Li, Zi-Tao Source: Chinese Physics B, v 22, n 4, April 2013

Database: Compendex

308. 10 × 100 mm 4H-SiC epitaxial growth by warm-wall planetary reactor

Dong, Lin (Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Sun, Guosheng; Yu, Jun; Yan, Guoguo; Zhao, Wanshun; Wang, Lei; Zhang, Xinhe; Li, Xiguang; Wang, Zhanguo Source: Materials Science Forum, v 740-742, p 239-242, 2013, Silicon Carbide and Related Materials 2012, ECSCRM 2012

Database: Compendex

309. Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well

Jin, Dong-Dong (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Jiang, Chao; Li, Guo-Dong; Zhang, Liu-Wan; Yang, Tao; Liu, Xiang-Lin; Yang, Shao-Yan; Zhu, Qin-Sheng; Wang, Zhan-Guo Source: Journal of Applied Physics, v 113, n 3, January 21, 2013

Database: Compendex

310. Au-decorated silicene: Design of a high-activity catalyst toward CO oxidation

Li, Chong (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yang, Shengxue; Li, Shu-Shen; Xia, Jian-Bai; Li, Jingbo Source: Journal of Physical Chemistry C, v 117, n 1, p 483-488, January 10, 2013

Database: Compendex

311. Enhancement of the Curie temperature of ferromagnetic semiconductor (Ga,Mn)As

Wang, Hailong (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Chen, Lin; Zhao, Jianhua Source: Science China: Physics, Mechanics and Astronomy, v 56, n 1, p 99-110, January 2013, Special Issue: Spintronics

Database: Compendex

312. Ag-assisted lateral etching of Si nanowires and its application to nanowire transfer

Li, Chuanbo (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Fobelets, Kristel; Liu, Chang; Xue, Chunlai; Cheng, Buwen; Wang, Qiming Source: Applied Physics Letters, v 103, n 18, October 28, 2013

Database: Compendex

313. Dark blue Cerenkov second harmonic generation in the octagonal quasi periodically poled MgO: LiNbO3

Fan, Xuedong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing, 100083, China); Ma, Chuanlong; Zheng, Wanhua Source: CLEO: Applications and Technology, CLEO_AT 2013, p JW2A.12, 2013, Conference on Lasers and Electro Optics, CLEO: Applications and Technology, CLEO_AT 2013

Database: Compendex

314. Structural, surface, and electrical properties of nitrogen ion implanted ZnTe epilayers

Yang, Qiumin (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Liu, Chao; Cui, Lijie; Zhang, Linen; Zeng, Yiping Source: Applied Physics A: Materials Science and Processing, p 1-5, 2013

Article in Press

Database: Compendex

315. Carrier-induced silicon waveguide bragg grating filter based on ion implantation

Fang, Qing (Institute of Microelectronics, A STAR, 11Science Park Road, Science Park II, 117685, Singapore); Song, JunFeng; Tu, Xiaoguang; Jia, Lianxi; Luo, Xianshu; Yu, Mingbin; Lo, Guo Qiang Source: Optical Fiber Communication Conference, OFC 2013, p OTu3C.8, 2013, Optical Fiber Communication Conference, OFC 2013

Database: Compendex

316. Micro-Raman study on chirped InGaAs-InAlAs superlattices

Hu, Yongzheng (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Lijun; Liu, Fengqi; Zhang, Jinchuan; Liu, Junqi; Wang, Zhanguo Source: Physica Status Solidi (A) Applications and Materials Science, v 210, n 11, p 2364-2368, November 2013

Database: Compendex

317. Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces

Dong, Lin (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, China); Sun, Guosheng; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Tian, Lixin; Li, Xiguang; Wang, Zhanguo Source: Physica Status Solidi (A) Applications and Materials Science, v 210, n 11, p 2503-2509, November 2013

Database: Compendex

318. Electro-optic logic circuits based on silicon microring switches

Yang, Lin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Zhang, Lei; Tian, Yonghui Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8855, 2013, Optics and Photonics for Information Processing VII

Database: Compendex

319. Femtosecond laser excitation of multiple spin waves and composition dependence of Gilbert damping in full-Heusler Co2Fe 1-xMnxAl films

Cheng, Chuyuan (State-Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China); Meng, Kangkang; Li, Shufa; Zhao, Jianhua; Lai, Tianshu Source: Applied Physics Letters, v 103, n 23, December 2, 2013

Database: Compendex

320. Structural and luminescence properties of yellow-emitting NaScSi 2O6:Eu2+ phosphors: Eu2+ Site preference analysis and generation of red emission by codoping Mn2+ for white-light-emitting diode applications

Xia, Zhiguo (School of Materials Sciences and Technology, China University of Geosciences, Beijing 100083, China); Zhang, Yuanyuan; Molokeev, Maxim S.; Atuchin, Victor V. Source: Journal of Physical Chemistry C, v 117, n 40, p 20847-20854, October 10, 2013

Database: Compendex

321. A high figure of merit localized surface plasmon sensor based on a gold nanograting on the top of a gold planar film

Zhang, Zu-Yin (Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Li-Na; Hu, Hai-Feng; Li, Kang-Wen; Ma, Xun-Peng; Song, Guo-Feng Source: Chinese Physics B, v 22, n 10, October 2013

Database: Compendex

322. Mechanism of the improvement in microcrystalline silicon solar cells by hydrogen plasma treatment

Li, Jing Yan (State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zeng, Xiang Bo; Li, Hao; Xie, Xiao Bing; Yang, Ping; Xiao, Hai Bo; Zhang, Xiao Dong; Wang, Qi Ming Source: Advanced Materials Research, v 773, p 118-123, 2013, Industrial Technologies for Sustainable Development

Database: Compendex

323. Design and experimental research of all-optical scanning device

Wang, Feng (Research Center of Laser Fusion, CAEP, P. O. Box 919-986, Mianyang 621900, China); Wei, Huiyue; Wei, Xin; Song, Guofeng; Xu, Tao; Peng, Xiaoshi; Liu, Shenye Source: Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams, v 25, n 9, p 2213-2218, September 2013 Language: Chinese

Database: Compendex

324. Effect of atomic hydrogen bombardment on the surface conductivity of polycrystalline diamond films

Liu, J.L. (School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, PR China); Li, C.M.; Guo, J.C.; Zhu, R.H.; Chen, L.X.; Wei, J.J.; Hei, L.F.; Wang, J.J.; Feng, Z.H.; Guo, H.; Lv, F.X. Source: Applied Surface Science, 2013

Article in Press

Database: Compendex

325. Acoustic emission source location using a distributed feedback fiber laser rosette

Huang, Wenzhu (Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Wentao; Li, Fang Source: Sensors (Switzerland), v 13, n 10, p 14041-14054, October 17, 2013

Database: Compendex

326. Research of near-infrared small living animal fluorescence imaging system

Wang, Mao (Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Jiangsu 215123, China); Li, Chunyan; Sun, Yunfei; Li, Min; Zhai, Xiaomin; Wu, Dongmin Source: Guangxue Xuebao/Acta Optica Sinica, v 33, n 6, June 2013 Language: Chinese

Database: Compendex

327. Sn-rich Au-Sn hermetic packaging at wafer level and its application in SPR sensor

Mao, Xu (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Fang, Zhiqiang; Zhang, Zhe; Yang, Jinling; Qi, Zhimei; Yang, Fuhua Source: 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013, p 244-247, 2013, 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013

Database: Compendex

328. Two-mode multiplexer and demultiplexer based on adiabatic couplers

Xing, Jiejiang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Li, Zhiyong; Xiao, Xi; Yu, Jinzhong; Yu, Yude Source: Optics Letters, v 38, n 17, p 3468-3470, September 1, 2013

Database: Compendex

329. Ohmic contact to n-type Ge with compositional Ti nitride

Wu, H.D. (Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian 361005, China); Huang, W.; Lu, W.F.; Tang, R.F.; Li, C.; Lai, H.K.; Chen, S.Y.; Xue, C.L. Source: Applied Surface Science, v 284, p 877-880, November 1, 2013

Database: Compendex

330. Optimization of direct modulation rate for circular microlasers by adjusting mode Q factor

Lv, Xiao-Meng (Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, No. A35, QingHua East Road, Beijing 100083, China); Huang, Yong-Zhen; Zou, Ling-Xiu; Long, Heng; Du, Yun Source: Laser and Photonics Reviews, v 7, n 5, p 818-829, September 2013

Database: Compendex

331. An ultra-low-power area-efficient non-volatile memory in a 0.18 μm single-poly CMOS process for passive RFID tags

Jia, Xiaoyun (State Key Laboratory for Super Lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Feng, Peng; Zhang, Shengguang; Wu, Nanjian; Zhao, Baiqin; Liu, Su Source: Journal of Semiconductors, v 34, n 8, August 2013

Database: Compendex

332. Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers

Peng, Enchao (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Hou, Xun; Wang, Zhanguo Source: Journal of Crystal Growth, v 383, p 25-29, 2013

Database: Compendex

333. Mechanical and electronic properties of graphyne and its family under elastic strain: Theoretical predictions

Yue, Qu (College of Science, National University of Defense Technology, Changsha 410073, Hunan Province, China); Chang, Shengli; Kang, Jun; Qin, Shiqiao; Li, Jingbo Source: Journal of Physical Chemistry C, v 117, n 28, p 14804-14811, July 18, 2013

Database: Compendex

334. The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells

Li, Liang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhao, De-Gang; Jiang, De-Sheng; Liu, Zong-Shun; Chen, Ping; Wu, Liang-Liang; Le, Ling-Cong; Wang, Hui; Yang, Hui Source: Chinese Physics B, v 22, n 6, June 2013

Database: Compendex

335. Highly efficient coupling between inner and surface fields in photonic crystal waveguides

Yu, Tianbao (Department of Physics, Nanchang University, Nanchang 330031, China); Li, Sizhong; Liu, Nianhua; Wang, Tongbiao; Liao, Qinghua; Xu, Xuming Source: IEEE Photonics Technology Letters, v 25, n 15, p 1496-1499, 2013

Database: Compendex

336. Electron energy and angle distribution of GaAs photocathodes

Chen, Zhanghui (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Jiang, Xiangwei; Li, Jingbo; Li, Shushen; Wang, Linwang Source: Journal of Applied Physics, v 114, n 3, July 21, 2013

Database: Compendex

337. Full-field strain mapping at a Ge/Si heterostructure interface

Li, Jijun (College of Science, Inner Mongolia University of Technology, Hohhot 010051, China); Zhao, Chunwang; Xing, Yongming; Su, Shaojian; Cheng, Buwen Source: Materials, v 6, n 6, p 2130-2142, 2013

Database: Compendex

338. Fabrication of SU8-based chip suitable for genomic sequencing

Han, Wei-Jing (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wei, Qing-Quan; Li, Yun-Tao; Zhou, Xiao-Guang; Yu, Yu-De Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 14, July 20, 2013 Language: Chinese

Database: Compendex

339. Mechanisms in thermal stress aided electroless etching of GaN grown on sapphire and approaches to vertical devices

Wang, Liancheng (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Zhiqiang; Zheng, Haiyang; Zhang, Yiyun; Cheng, Yan; Xie, Haizhong; Rao, Liqiang; Wei, Tongbo; Yang, Hua; Yuan, Guodong; Yi, Xiaoyan; Wang, Guohong Source: RSC Advances, v 3, n 27, p 10934-10943, 2013

Database: Compendex

340. Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor

Li, Xiaoming (Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Han, Weihua; Wang, Hao; Ma, Liuhong; Zhang, Yanbo; Du, Yandong; Yang, Fuhua Source: Applied Physics Letters, v 102, n 22, June 3, 2013

Database: Compendex

341. Ordered silicon nanowires prepared by template-assisted morphological design and metal-assisted chemical etching

Liu, Kong (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China); Qu, Shengchun; Tan, Furui; Bi, Yu; Lu, Shudi; Wang, Zhanguo Source: Materials Letters, v 101, p 96-98, 2013

Database: Compendex

342. Why twisting angles are diverse in graphene Moiré patterns?

Jiang, Jin-Wu (Institute of Structural Mechanics, Bauhaus-University Weimar, Marienstr. 15, D-99423 Weimar, Germany); Wang, Bing-Shen; Rabczuk, Timon Source: Journal of Applied Physics, v 113, n 19, May 21, 2013

Database: Compendex

343. Strain-driven synthesis of self-catalyzed branched GaAs nanowires

Zha, Guowei (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Li, Mifeng; Yu, Ying; Wang, Lijuan; Xu, Jianxing; Shang, Xiangjun; Ni, Haiqiao; Niu, Zhichuan Source: Applied Physics Letters, v 102, n 16, April 22, 2013

Database: Compendex

344. Flat spectral response of arrayed waveguide grating

Zhang, Li-Yao (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wu, Yuan-Da; An, Jun-Ming; Wang, Yue; Wang, Liang-Liang; Pan, Pan; Zhang, Jia-Shun; Zhang, Xiao-Guang; Hu, Xiong-Wei Source: Guangzi Xuebao/Acta Photonica Sinica, v 42, n 4, p 379-385, April 2013 Language: Chinese