458. High response solar-blind ultraviolet photodetector based on Zr 0.5Ti0.5O2 film
Zhang, Min (State Key Laboratory on Integrated Optoelectronics, Jilin University, 2699 Qianjin Street, Changchun 130012, China); Gu, Xuehui; Lv, Kaibo; Dong, Wei; Ruan, Shengping; Chen, Yu; Zhang, Haifeng Source: Applied Surface Science, v 268, p 312-316, 2013
Database: Compendex
459. Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy
Guo, Xiaolu (Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A 35, Beijing 100083, China); Ma, Wenquan; Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Cui, Kai; Cao, Yulian; Li, Qiong Source: Semiconductor Science and Technology, v 28, n 4, April 2013
Database: Compendex
460. PEDOT/MWCNT composite film coated microelectrode arrays for neural interface improvement
Chen, Sanyuan (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Pei, Weihua; Gui, Qiang; Tang, Rongyu; Chen, Yuanfang; Zhao, Shanshan; Wang, Huan; Chen, Hongda Source: Sensors and Actuators, A: Physical, v 193, p 141-148, 2013
Database: Compendex
461. Improved performance of dye-sensitized solar cells with TiO2 nanocrystal/nanowires double-layered films as photoelectrode
Meng, Xiuqing (Research Center for Light Emitting Diodes (LED), Zhejiang Normal University, Jinhua, 321004, China); Wang, Yan; Wang, Meili; Tu, Jielei; Wu, Fengmin Source: RSC Advances, v 3, n 10, p 3304-3308, March 14, 2013
Database: Compendex
462. Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping
Wang, Liancheng (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Zhang, Yiyun; Li, Xiao; Guo, Enqing; Liu, Zhiqiang; Yi, Xiaoyan; Zhu, Hongwei; Wang, Guohong Source: RSC Advances, v 3, n 10, p 3359-3364, March 14, 2013
Database: Compendex
463. Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor
Zhou, Yu (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China); Li, Xinxing; Tan, Renbing; Xue, Wei; Huang, Yongdan; Lou, Shitao; Zhang, Baoshun; Qin, Hua Source: Journal of Semiconductors, v 34, n 2, February 2013
Database: Compendex
464. Nucleation and growth surface conductivity of H-terminated diamond films prepared by DC arc jet CVD
Liu, J.L. (School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China); Li, C.M.; Chen, L.X.; Wei, J.J.; Hei, L.F.; Wang, J.J.; Feng, Z.H.; Guo, H.; Lv, F.X. Source: Diamond and Related Materials, v 32, p 48-53, 2013
Database: Compendex
465. Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors
Ji, Dong (Department of Physics, Beijing Jiaotong University, Beijing 100044, China); Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo Source: Solid State Communications, v 153, n 1, p 53-57, January 2013
Database: Compendex
466. Diaphragm-based fiber optic fabry-perot hydrophone with hydrostatic pressure compensation
Wang, Zhaogang (Optoelectronics System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box 912, Beijing, 100083, China); Zhang, Wentao; Li, Fang Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8924, 2013, Fourth Asia Pacific Optical Sensors Conference
Database: Compendex
467. Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors
Wan, Xiaojia (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Xiaoliang; Xiao, Hongling; Feng, Chun; Jiang, Lijuan; Qu, Shenqi; Wang, Zhanguo; Hou, Xun Source: Journal of Semiconductors, v 34, n 10, October 2013
Database: Compendex
468. Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors
Tan, Ren-Bing (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China); Qin, Hua; Zhang, Xiao-Yu; Xu, Wen Source: Chinese Physics B, v 22, n 11, November 2013
Database: Compendex
469. High efficiency beam combination of 4.6-μm quantum cascade lasers
Wu, Hao (Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China); Wang, Lijun; Liu, Fengqi; Peng, Hangyu; Zhang, Jun; Tong, Cunzhu; Ning, Yongqiang; Wang, Lijun Source: Chinese Optics Letters, v 11, n 9, September 2013
Database: Compendex
470. A processing window for fabricating heavily doped silicon nanowires by metal-assisted chemical etching
Qi, Yangyang (Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Zhen; Zhang, Mingliang; Yang, Fuhua; Wang, Xiaodong Source: Journal of Physical Chemistry C, v 117, n 47, p 25090-25096, November 27, 2013
Database: Compendex
471. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots
Wang, Hong-Pei (Laboratory of Nanotechnology and Microsystems, Ordnance Engineering College, Shijiazhuang 050003, China); Wang, Guang-Long; Yu, Ying; Xu, Ying-Qiang; Ni, Hai-Qiao; Niu, Zhi-Chuan; Gao, Feng-Qi Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 20, 2013 Language: Chinese
Database: Compendex
472. Efficiency enhancement of polymer solar cells by localized surface plasmon of Au nanoparticles
Gao, H.L. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, X.W.; Yin, Z.G.; Zhang, S.G.; Meng, J.H.; Liu, X. Source: Journal of Applied Physics, v 114, n 16, October 28, 2013
Database: Compendex
473. Monolithic integrated silicon photonic interconnect with perfectly vertical coupling optical interface
Zhang, Zanyun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Huang, Beiju; Zheng, Zan; Cheng, Chuantong; Chen, Hongda Source: IEEE Photonics Journal, v 5, n 5, 2013
Database: Compendex
474. Optimum design of cam curve of zoom system based on Zemax
Gao, Yuhan (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yang, Zhiqing; Zhao, Weixing; Jiang, Bo; Li, Dongmei; Li, Mingshan Source: Optik, v 124, n 23, p 6359-6362, December 2013
Database: Compendex
475. Surface emitting quantum cascade lasers operating in continuous-wave mode above 70 °c at λ ~ 4.6 μm
Yao, Dan-Yang (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zhang, Jin-Chuan; Liu, Feng-Qi; Zhuo, Ning; Yan, Fang-Liang; Wang, Li-Jun; Liu, Jun-Qi; Wang, Zhan-Guo Source: Applied Physics Letters, v 103, n 4, July 22, 2013
Database: Compendex
476. Structural and optical properties of (Sr,Ba)2SiO4:Eu2+ thin films grown by magnetron sputtering
Li, Leliang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, Peoples Republic of China); Zheng, Jun; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming Source: Journal of Luminescence, 2013
Article in Press
Database: Compendex
477. Compact and power-efficient silicon modulators beyond 60 Gbit/s
Xiao, Xi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, China); Xu, Hao; Li, Xianyao; Chu, Tao; Yu, Jinzhong; Yu, Yude Source: Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 2013, 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
Database: Compendex
478. Hydrogen storage by metalized silicene and silicane
Wang, Jing (Department of Physics, Hebei Advanced Thin Film Laboratory, Hebei Normal University, Shijiazhuang 050024, China); Li, Jingbo; Li, Shu-Shen; Liu, Ying Source: Journal of Applied Physics, v 114, n 12, 2013
Database: Compendex
479. Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
Wang, Lanxiang (Department of Electrical and Computer Engineering, NUS Graduate School of Integrative Sciences and Engineering (NGS), National University of Singapore, Singapore 117576, Singapore); Su, Shaojian; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Han, Genquan; Yeo, Yee-Chia Source: Solid-State Electronics, v 83, p 66-70, 2013
Database: Compendex
480. Photonic generation of widely tunable and background-free binary phase-coded radio-frequency pulses
Li, Wei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Li Xian; Li, Ming; Zhu, Ning Hua Source: Optics Letters, v 38, n 17, p 3441-3444, September 1, 2013
Database: Compendex
481. The output power and beam divergence behaviors of tapered terahertz quantum cascade lasers
Li, Yanfang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China); Wang, Jian; Yang, Ning; Liu, Junqi; Wang, Tao; Liu, Fengqi; Wang, Zhanguo; Chu, Weidong; Duan, Suqing Source: Optics Express, v 21, n 13, p 15998-16006, July 1, 2013
Database: Compendex
482. Design and experimental verification for optical module of optical vector-matrix multiplier
Zhu, Weiwei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zhang, Lei; Lu, Yangyang; Zhou, Ping; Yang, Lin Source: Applied Optics, v 52, n 18, p 4412-4418, June 20, 2013
Database: Compendex
483. Dual-beam optically injected semiconductor laser for radio-over-fiber downlink transmission with tunable microwave subcarrier frequency
Liu, Yuping (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Qi, Xiaoqiong; Xie, Liang Source: Optics Communications, v 292, p 117-122, 2013
Database: Compendex
484. Terahertz light deflection in doped semiconductor slit arrays
Xu, Binzong (Institute of Semiconductors, Chinese Academy of Sciences, No. A35, QingHua East Road, Haidian District, Beijing 100083, China); Hu, Haifeng; Liu, Jietao; Wei, Xin; Wang, Qing; Song, Guofeng; Xu, Yun Source: Optics Communications, v 308, p 74-77, 2013
Database: Compendex
485. Conjugated molecule doped polyaniline films as buffer layers in organic solar cells
Tan, Furui (Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Henan 475004, China); Qu, Shengchun; Zhang, Weifeng; Zhang, Xingwang; Wang, Zhanguo Source: Synthetic Metals, v 178, p 18-21, 2013
Database: Compendex
486. Growth temperature dependent structural and magnetic properties of epitaxial Co2FeAl Heusler alloy films
Qiao, Shuang (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui Source: Journal of Applied Physics, v 113, n 23, June 21, 2013
Database: Compendex
487. Investigation anisotropic mode splitting induced by electro-optic birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser
Yu, J.L. (College of Physics and Information Engineering, Institute of Micro/Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, Fujian Province, China); Cheng, S.Y.; Lai, Y.F.; Chen, Y.H. Source: Journal of Applied Physics, v 114, n 3, July 21, 2013
Database: Compendex
488. Multi-component continuous separation chip composed of micropillar arrays in a split-level spiral channel
Geng, Zhaoxin (School of Information Engineering, Minzu University of China, Beijing 100081, China); Ju, Yanrui; Wang, Qifeng; Wang, Wei; Li, Zhihong Source: RSC Advances, v 3, n 34, p 14798-14806, August 5, 2013
Database: Compendex
489. Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111) substrates: A potential route to fabricate topological insulator p-n junction
Zeng, Zhaoquan (Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701, United States); Morgan, Timothy A.; Fan, Dongsheng; Li, Chen; Hirono, Yusuke; Hu, Xian; Zhao, Yanfei; Lee, Joon Sue; Wang, Jian; Wang, Zhiming M.; Yu, Shuiqing; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J. Source: AIP Advances, v 3, n 7, 2013
Database: Compendex
490. A hybrid silicon single-mode laser with a racetrack ring and periodic slots
Zhang, Yejin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Hailing; Qu, Hongwei; Zhang, Siriguleng; Zheng, Wanhua Source: Microwave and Optical Technology Letters, v 55, n 9, p 2141-2143, September 2013
Database: Compendex
491. Dispersion relation of bloch modes in corrugated metallic thin film with square-lattice nanowell array
Wang, Zhenzhen (Key Laboratory Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Chunxia; Kan, Qiang; Chen, Hongda Source: Journal of Lightwave Technology, v 31, n 14, p 2314-2320, 2013
Database: Compendex
492. Structural and magnetic properties of Yb-implanted GaN
Yin, Chunhai (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Chao; Tao, Dongyan; Zeng, Yiping Source: Journal of Semiconductors, v 34, n 5, May 2013
Database: Compendex
493. High sensitivity Hall devices with AlSb/InAs quantum well structures
Zhang, Yang (Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Yu-Wei; Wang, Cheng-Yan; Guan, Min; Cui, Li-Jie; Li, Yi-Yang; Wang, Bao-Qiang; Zhu, Zhan-Ping; Zeng, Yi-Ping Source: Chinese Physics B, v 22, n 5, May 2013
Database: Compendex
494. Mode analysis for unidirectional emission AlGaInAs/InP octagonal resonator microlasers
Zou, Ling-Xiu (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Lv, Xiao-Meng; Huang, Yong-Zhen; Long, Heng; Xiao, Jin-Long; Yao, Qi-Feng; Lin, Jian-Dong; Du, Yun Source: IEEE Journal on Selected Topics in Quantum Electronics, v 19, n 4, 2013
Database: Compendex
495. InP based DFB laser array integrated with MMI coupler
Zhu, Hongliang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Ma, Li; Liang, Song; Zhang, Can; Wang, Baojun; Zhao, Lingjuan; Wang, Wei Source: Science China Technological Sciences, v 56, n 3, p 573-578, March 2013
Database: Compendex
496. The effect of magnetic ordering on light emitting intensity of Eu-doped GaN
Li, Yanchen (Key Laboratory of Artificial Micro-and Nano-structures, Ministry of Education, Wuhan University, Wuhan 430072, Hubei, China); Yu, Sheng; Meng, Xianquan; Liu, Yihe; Zhao, Yonghe; Liu, Feng Qi; Wang, Zhanguo Source: Journal of Physics D: Applied Physics, v 46, n 21, May 29, 2013
Database: Compendex
497. Mode analysis for metal-coated nanocavity by three-dimensional S-matrix method
Yao, Qi-Feng (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Huang, Yong-Zhen; Yang, Yue-De; Zou, Ling-Xiu; Lv, Xiao-Meng; Long, Heng; Xiao, Jin-Long; Guo, Chu-Cai Source: Journal of the Optical Society of America B: Optical Physics, v 30, n 5, p 1335-1341, May 2013
Database: Compendex
498. High-performance energy-storage devices based on WO3 nanowire arrays/carbon cloth integrated electrodes
Gao, Lina (Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China); Wang, Xianfu; Xie, Zhong; Song, Weifeng; Wang, Lijing; Wu, Xiang; Qu, Fengyu; Chen, Di; Shen, Guozhen Source: Journal of Materials Chemistry A, v 1, n 24, p 7167-7173, June 28, 2013
Database: Compendex
499. Mach-Zehnder-based five-port silicon router for optical interconnects
Li, Xianyao (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Xiao, Xi; Xu, Hao; Li, Zhiyong; Chu, Tao; Yu, Jinzhong; Yu, Yude Source: Optics Letters, v 38, n 10, p 1703-1705, May 15, 2013
Database: Compendex
500. Selective synthesis of Sb2S3 nanoneedles and nanoflowers for high performance rigid and flexible photodetectors
Chao, Junfeng (Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China); Liang, Bo; Hou, Xiaojuan; Liu, Zhe; Xie, Zhong; Liu, Bin; Song, Weifeng; Chen, Gui; Chen, Di; Shen, Guozhen Source: Optics Express, v 21, n 11, p 13639-13647, June 3, 2013
Database: Compendex
501. Multibistability and self-pulsation in nonlinear high-Q silicon microring resonators considering thermo-optical effect
Zhang, Libin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Fei, Yonghao; Cao, Tongtong; Cao, Yanmei; Xu, Qingyang; Chen, Shaowu Source: Physical Review A - Atomic, Molecular, and Optical Physics, v 87, n 5, May 6, 2013
Database: Compendex
502. Observation of photo darkening in self assembled InGaAs/GaAs quantum dots
Zhang, Hongyi (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Chen, Yonghai; Zhou, Xiaolong; Jia, Yanan; Ye, Xiaoling; Xu, Bo; Wang, Zhanguo Source: Journal of Applied Physics, v 113, n 17, May 7, 2013
Database: Compendex
503. High performance thin film transistors based on regioregular poly(3-dodecylthiophene)-sorted large diameter semiconducting single-walled carbon nanotubes
Wang, Chao (Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, China); Qian, Long; Xu, Wenya; Nie, Shuhong; Gu, Weibing; Zhang, Jianhui; Zhao, Jianwen; Lin, Jian; Chen, Zheng; Cui, Zheng Source: Nanoscale, v 5, n 10, p 4156-4161, May 21, 2013
Database: Compendex
504. Error analysis of InP arrayed waveguide grating
Pan, Pan (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); An, Jun-Ming; Wang, Liang-Liang; Zhang, Li-Yao; Wang, Yue; Hu, Xiong-Wei Source: Guangzi Xuebao/Acta Photonica Sinica, v 42, n 3, p 293-297, March 2013 Language: Chinese
Database: Compendex
505. Fiber optic accelerometer based on clamped beam
Zhang, Wentao (Optoelectronics System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing,100083, China); Li, Fang Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8759, 2013, Eighth International Symposium on Precision Engineering Measurements and Instrumentation
Database: Compendex
506. Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire
He, Yu (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yu, Ying; Li, Mi-Feng; He, Ji-Fang; He, Yu-Ming; Wei, Yu-Jia; Zha, Guo-Wei; Shang, Xiang-Jun; Wang, Juan; Wang, Li-Juan; Wang, Guo-Wei; Ni, Hai-Qiao; Lu, Chao-Yang; Niu, Zhi-Chuan Source: Nano Letters, v 13, n 4, p 1399-1404, April 10, 2013
Database: Compendex
507. A chirped subwavelength grating with both reflection and transmission focusing
Lv, Xiaomin (College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China); Qiu, Weibin; Wang, Jia-Xian; Ma, Yuhui; Zhao, Jing; Li, Mengke; Yu, Hongyan; Pan, Jiaoqing Source: IEEE Photonics Journal, v 5, n 2, 2013
Database: Compendex
508. Five-port optical router based on microring switches for photonic networks-on-chip
Ji, Ruiqiang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xu, Jiang; Yang, Lin Source: IEEE Photonics Technology Letters, v 25, n 5, p 492-495, 2013
Database: Compendex
509. High efficiency and high power continuous-wave semiconductor terahertz lasers at ~3.1 THz
Liu, Junqi (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Chen, Jianyan; Wang, Tao; Li, Yanfang; Liu, Fengqi; Li, Lu; Wang, Lijun; Wang, Zhanguo Source: Solid-State Electronics, v 81, p 68-71, 2013
Database: Compendex
510. Far infrared response of silicon nanowire arrays
Fobelets, K. (Department of Electrical and Electronic Engineering, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom); Li, C.B.; Coquillat, D.; Arcade, P.; Teppe, F. Source: RSC Advances, v 3, n 13, p 4434-4439, April 7, 2013
Database: Compendex
511. Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy
Zhou, Kun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China); Liu, Jianping; Zhang, Shuming; Li, Zengcheng; Feng, Meixin; Li, Deyao; Zhang, Liqun; Wang, Feng; Zhu, Jianjun; Yang, Hui Source: Journal of Crystal Growth, 2013
Article in Press
Database: Compendex
512. Stable p- and n-type doping of few-layer graphene/graphite
Meng, Xiuqing (Research Center for Light Emitting Diodes (LED), Zhejiang Normal University, Jinhua 321004, China); Tongay, Sefaattin; Kang, Jun; Chen, Zhanghui; Wu, Fengmin; Li, Shu-Shen; Xia, Jian-Bai; Li, Jingbo; Wu, Junqiao Source: Carbon, v 57, p 507-514, June 2013
Database: Compendex
513. Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping
Yang, Xiaoguang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Kefan; Gu, Yongxian; Ni, Haiqiao; Wang, Xiaodong; Yang, Tao; Wang, Zhanguo Source: Solar Energy Materials and Solar Cells, v 113, p 144-147, 2013
Database: Compendex
514. Spectra of circular and linear photogalvanic effect at inter-band excitation in In0.15Ga0.85As/Al0.3Ga 0.7As multiple quantum wells
Yu, Jinling (College of Physics and Information Engineering, Institute of Micro/Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, Fujian Province, China); Chen, Yonghai; Cheng, Shuying; Lai, Yunfeng Source: Physica E: Low-Dimensional Systems and Nanostructures, v 49, p 92-96, 2013
Database: Compendex
515. Highly nonlinear property and threshold voltage of Sc2O 3 doped ZnO-Bi2O3-based varistor ceramics
Xu, Dong (School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China); Wu, Jieting; Jiao, Lei; Xu, Hongxing; Zhang, Peimei; Yu, Renhong; Cheng, Xiaonong Source: Journal of Rare Earths, v 31, n 2, p 158-163, February 2013
Database: Compendex
516. Generation of pure bulk valley current in graphene
Jiang, Yongjin (Center for Statistical and Theoretical Condensed Matter Physics, Department of Physics, Zhejiang Normal University, Jinhua 321004, China); Low, Tony; Chang, Kai; Katsnelson, Mikhail I.; Guinea, Francisco Source: Physical Review Letters, v 110, n 4, January 23, 2013
Database: Compendex
517. Structural, morphological and magnetic characteristics of Tb-implanted GaN and AlGaN films
Gao, Xingguo (College of Physics and Electronics, Shandong Normal University, Jinan 250014, China); Liu, Chao; Yin, Chunhai; Tao, Dongyan; Yang, Cheng; Man, Baoyuan Source: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, v 178, n 6, p 349-353, April 1, 2013
Database: Compendex
518. Improvement of n/i interface layer properties in microcrystalline silicon solar cell
Zeng, Xiangbo (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Jinyan; Xie, Xiaobing; Yang, Ping; Li, Hao; Xiao, Haibo; Zhang, Xiaodong; Wang, Qiming Source: Key Engineering Materials, v 537, p 193-196, 2013, Inorganic Thin Films and Coatings
Database: Compendex
519. High-Q modes in defected microcircular resonator confined by metal layer for unidirectional emission
Yao, Qi-Feng (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Huang, Yong-Zhen; Lin, Jian-Dong; Lv, Xiao-Meng; Zou, Ling-Xiu; Long, Heng; Yang, Yue-De; Xiao, Jin-Long Source: Optics Express, v 21, n 2, p 2165-2170, January 28, 2013
Database: Compendex
520. 0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-ybuffers
Ji, Lian (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China); Lu, Shu-Long; Jiang, De-Sheng; Zhao, Yong-Ming; Tan, Ming; Zhu, Ya-Qi; Dong, Jian-Rong Source: Chinese Physics B, v 22, n 2, February 2013
Database: Compendex
521. Evolution of electronic structure in atomically thin sheets of ws 2 and wse2
Zhao, Weijie (Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore); Ghorannevis, Zohreh; Chu, Leiqiang; Toh, Minglin; Kloc, Christian; Tan, Ping-Heng; Eda, Goki Source: ACS Nano, v 7, n 1, p 791-797, January 22, 2013
Database: Compendex
522. Band offsets and heterostructures of two-dimensional semiconductors
Kang, Jun (Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Tongay, Sefaattin; Zhou, Jian; Li, Jingbo; Wu, Junqiao Source: Applied Physics Letters, v 102, n 1, January 7, 2013
Database: Compendex
523. The measurement of magneto-optical Kerr effect of ultrathin films in a pulsed magnetic field
Chen, Xi (SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Qian, Xuan; Meng, Kangkang; Zhao, Jianhua; Ji, Yang Source: Measurement: Journal of the International Measurement Confederation, v 46, n 1, p 52-56, January 2013
Database: Compendex |