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458. High response solar-blind ultraviolet photodetector based on Zr 0.5Ti0.5O2 film

Zhang, Min (State Key Laboratory on Integrated Optoelectronics, Jilin University, 2699 Qianjin Street, Changchun 130012, China); Gu, Xuehui; Lv, Kaibo; Dong, Wei; Ruan, Shengping; Chen, Yu; Zhang, Haifeng Source: Applied Surface Science, v 268, p 312-316, 2013

Database: Compendex

459. Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy

Guo, Xiaolu (Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A 35, Beijing 100083, China); Ma, Wenquan; Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Cui, Kai; Cao, Yulian; Li, Qiong Source: Semiconductor Science and Technology, v 28, n 4, April 2013

Database: Compendex

460. PEDOT/MWCNT composite film coated microelectrode arrays for neural interface improvement

Chen, Sanyuan (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Pei, Weihua; Gui, Qiang; Tang, Rongyu; Chen, Yuanfang; Zhao, Shanshan; Wang, Huan; Chen, Hongda Source: Sensors and Actuators, A: Physical, v 193, p 141-148, 2013

Database: Compendex

461. Improved performance of dye-sensitized solar cells with TiO2 nanocrystal/nanowires double-layered films as photoelectrode

Meng, Xiuqing (Research Center for Light Emitting Diodes (LED), Zhejiang Normal University, Jinhua, 321004, China); Wang, Yan; Wang, Meili; Tu, Jielei; Wu, Fengmin Source: RSC Advances, v 3, n 10, p 3304-3308, March 14, 2013

Database: Compendex

462. Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping

Wang, Liancheng (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Zhang, Yiyun; Li, Xiao; Guo, Enqing; Liu, Zhiqiang; Yi, Xiaoyan; Zhu, Hongwei; Wang, Guohong Source: RSC Advances, v 3, n 10, p 3359-3364, March 14, 2013

Database: Compendex

463. Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor

Zhou, Yu (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China); Li, Xinxing; Tan, Renbing; Xue, Wei; Huang, Yongdan; Lou, Shitao; Zhang, Baoshun; Qin, Hua Source: Journal of Semiconductors, v 34, n 2, February 2013

Database: Compendex

464. Nucleation and growth surface conductivity of H-terminated diamond films prepared by DC arc jet CVD

Liu, J.L. (School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China); Li, C.M.; Chen, L.X.; Wei, J.J.; Hei, L.F.; Wang, J.J.; Feng, Z.H.; Guo, H.; Lv, F.X. Source: Diamond and Related Materials, v 32, p 48-53, 2013

Database: Compendex

465. Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

Ji, Dong (Department of Physics, Beijing Jiaotong University, Beijing 100044, China); Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo Source: Solid State Communications, v 153, n 1, p 53-57, January 2013

Database: Compendex

466. Diaphragm-based fiber optic fabry-perot hydrophone with hydrostatic pressure compensation

Wang, Zhaogang (Optoelectronics System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box 912, Beijing, 100083, China); Zhang, Wentao; Li, Fang Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8924, 2013, Fourth Asia Pacific Optical Sensors Conference

Database: Compendex

467. Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors

Wan, Xiaojia (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Xiaoliang; Xiao, Hongling; Feng, Chun; Jiang, Lijuan; Qu, Shenqi; Wang, Zhanguo; Hou, Xun Source: Journal of Semiconductors, v 34, n 10, October 2013

Database: Compendex

468. Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

Tan, Ren-Bing (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China); Qin, Hua; Zhang, Xiao-Yu; Xu, Wen Source: Chinese Physics B, v 22, n 11, November 2013

Database: Compendex

469. High efficiency beam combination of 4.6-μm quantum cascade lasers

Wu, Hao (Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China); Wang, Lijun; Liu, Fengqi; Peng, Hangyu; Zhang, Jun; Tong, Cunzhu; Ning, Yongqiang; Wang, Lijun Source: Chinese Optics Letters, v 11, n 9, September 2013

Database: Compendex

470. A processing window for fabricating heavily doped silicon nanowires by metal-assisted chemical etching

Qi, Yangyang (Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Zhen; Zhang, Mingliang; Yang, Fuhua; Wang, Xiaodong Source: Journal of Physical Chemistry C, v 117, n 47, p 25090-25096, November 27, 2013

Database: Compendex

471. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots

Wang, Hong-Pei (Laboratory of Nanotechnology and Microsystems, Ordnance Engineering College, Shijiazhuang 050003, China); Wang, Guang-Long; Yu, Ying; Xu, Ying-Qiang; Ni, Hai-Qiao; Niu, Zhi-Chuan; Gao, Feng-Qi Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 20, 2013 Language: Chinese

Database: Compendex

472. Efficiency enhancement of polymer solar cells by localized surface plasmon of Au nanoparticles

Gao, H.L. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, X.W.; Yin, Z.G.; Zhang, S.G.; Meng, J.H.; Liu, X. Source: Journal of Applied Physics, v 114, n 16, October 28, 2013

Database: Compendex

473. Monolithic integrated silicon photonic interconnect with perfectly vertical coupling optical interface

Zhang, Zanyun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Huang, Beiju; Zheng, Zan; Cheng, Chuantong; Chen, Hongda Source: IEEE Photonics Journal, v 5, n 5, 2013

Database: Compendex

474. Optimum design of cam curve of zoom system based on Zemax

Gao, Yuhan (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yang, Zhiqing; Zhao, Weixing; Jiang, Bo; Li, Dongmei; Li, Mingshan Source: Optik, v 124, n 23, p 6359-6362, December 2013

Database: Compendex

475. Surface emitting quantum cascade lasers operating in continuous-wave mode above 70 °c at λ ~ 4.6 μm

Yao, Dan-Yang (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zhang, Jin-Chuan; Liu, Feng-Qi; Zhuo, Ning; Yan, Fang-Liang; Wang, Li-Jun; Liu, Jun-Qi; Wang, Zhan-Guo Source: Applied Physics Letters, v 103, n 4, July 22, 2013

Database: Compendex

476. Structural and optical properties of (Sr,Ba)2SiO4:Eu2+ thin films grown by magnetron sputtering

Li, Leliang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, Peoples Republic of China); Zheng, Jun; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming Source: Journal of Luminescence, 2013

Article in Press

Database: Compendex

477. Compact and power-efficient silicon modulators beyond 60 Gbit/s

Xiao, Xi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, China); Xu, Hao; Li, Xianyao; Chu, Tao; Yu, Jinzhong; Yu, Yude Source: Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 2013, 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013

Database: Compendex

478. Hydrogen storage by metalized silicene and silicane

Wang, Jing (Department of Physics, Hebei Advanced Thin Film Laboratory, Hebei Normal University, Shijiazhuang 050024, China); Li, Jingbo; Li, Shu-Shen; Liu, Ying Source: Journal of Applied Physics, v 114, n 12, 2013

Database: Compendex

479. Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

Wang, Lanxiang (Department of Electrical and Computer Engineering, NUS Graduate School of Integrative Sciences and Engineering (NGS), National University of Singapore, Singapore 117576, Singapore); Su, Shaojian; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Han, Genquan; Yeo, Yee-Chia Source: Solid-State Electronics, v 83, p 66-70, 2013

Database: Compendex

480. Photonic generation of widely tunable and background-free binary phase-coded radio-frequency pulses

Li, Wei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Li Xian; Li, Ming; Zhu, Ning Hua Source: Optics Letters, v 38, n 17, p 3441-3444, September 1, 2013

Database: Compendex

481. The output power and beam divergence behaviors of tapered terahertz quantum cascade lasers

Li, Yanfang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China); Wang, Jian; Yang, Ning; Liu, Junqi; Wang, Tao; Liu, Fengqi; Wang, Zhanguo; Chu, Weidong; Duan, Suqing Source: Optics Express, v 21, n 13, p 15998-16006, July 1, 2013

Database: Compendex

482. Design and experimental verification for optical module of optical vector-matrix multiplier

Zhu, Weiwei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zhang, Lei; Lu, Yangyang; Zhou, Ping; Yang, Lin Source: Applied Optics, v 52, n 18, p 4412-4418, June 20, 2013

Database: Compendex

483. Dual-beam optically injected semiconductor laser for radio-over-fiber downlink transmission with tunable microwave subcarrier frequency

Liu, Yuping (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Qi, Xiaoqiong; Xie, Liang Source: Optics Communications, v 292, p 117-122, 2013

Database: Compendex

484. Terahertz light deflection in doped semiconductor slit arrays

Xu, Binzong (Institute of Semiconductors, Chinese Academy of Sciences, No. A35, QingHua East Road, Haidian District, Beijing 100083, China); Hu, Haifeng; Liu, Jietao; Wei, Xin; Wang, Qing; Song, Guofeng; Xu, Yun Source: Optics Communications, v 308, p 74-77, 2013

Database: Compendex

485. Conjugated molecule doped polyaniline films as buffer layers in organic solar cells

Tan, Furui (Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Henan 475004, China); Qu, Shengchun; Zhang, Weifeng; Zhang, Xingwang; Wang, Zhanguo Source: Synthetic Metals, v 178, p 18-21, 2013

Database: Compendex

486. Growth temperature dependent structural and magnetic properties of epitaxial Co2FeAl Heusler alloy films

Qiao, Shuang (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui Source: Journal of Applied Physics, v 113, n 23, June 21, 2013

Database: Compendex

487. Investigation anisotropic mode splitting induced by electro-optic birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser

Yu, J.L. (College of Physics and Information Engineering, Institute of Micro/Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, Fujian Province, China); Cheng, S.Y.; Lai, Y.F.; Chen, Y.H. Source: Journal of Applied Physics, v 114, n 3, July 21, 2013

Database: Compendex

488. Multi-component continuous separation chip composed of micropillar arrays in a split-level spiral channel

Geng, Zhaoxin (School of Information Engineering, Minzu University of China, Beijing 100081, China); Ju, Yanrui; Wang, Qifeng; Wang, Wei; Li, Zhihong Source: RSC Advances, v 3, n 34, p 14798-14806, August 5, 2013

Database: Compendex

489. Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111) substrates: A potential route to fabricate topological insulator p-n junction

Zeng, Zhaoquan (Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701, United States); Morgan, Timothy A.; Fan, Dongsheng; Li, Chen; Hirono, Yusuke; Hu, Xian; Zhao, Yanfei; Lee, Joon Sue; Wang, Jian; Wang, Zhiming M.; Yu, Shuiqing; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J. Source: AIP Advances, v 3, n 7, 2013

Database: Compendex

490. A hybrid silicon single-mode laser with a racetrack ring and periodic slots

Zhang, Yejin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Hailing; Qu, Hongwei; Zhang, Siriguleng; Zheng, Wanhua Source: Microwave and Optical Technology Letters, v 55, n 9, p 2141-2143, September 2013

Database: Compendex

491. Dispersion relation of bloch modes in corrugated metallic thin film with square-lattice nanowell array

Wang, Zhenzhen (Key Laboratory Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Chunxia; Kan, Qiang; Chen, Hongda Source: Journal of Lightwave Technology, v 31, n 14, p 2314-2320, 2013

Database: Compendex

492. Structural and magnetic properties of Yb-implanted GaN

Yin, Chunhai (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Chao; Tao, Dongyan; Zeng, Yiping Source: Journal of Semiconductors, v 34, n 5, May 2013

Database: Compendex

493. High sensitivity Hall devices with AlSb/InAs quantum well structures

Zhang, Yang (Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Yu-Wei; Wang, Cheng-Yan; Guan, Min; Cui, Li-Jie; Li, Yi-Yang; Wang, Bao-Qiang; Zhu, Zhan-Ping; Zeng, Yi-Ping Source: Chinese Physics B, v 22, n 5, May 2013

Database: Compendex

494. Mode analysis for unidirectional emission AlGaInAs/InP octagonal resonator microlasers

Zou, Ling-Xiu (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Lv, Xiao-Meng; Huang, Yong-Zhen; Long, Heng; Xiao, Jin-Long; Yao, Qi-Feng; Lin, Jian-Dong; Du, Yun Source: IEEE Journal on Selected Topics in Quantum Electronics, v 19, n 4, 2013

Database: Compendex

495. InP based DFB laser array integrated with MMI coupler

Zhu, Hongliang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Ma, Li; Liang, Song; Zhang, Can; Wang, Baojun; Zhao, Lingjuan; Wang, Wei Source: Science China Technological Sciences, v 56, n 3, p 573-578, March 2013

Database: Compendex

496. The effect of magnetic ordering on light emitting intensity of Eu-doped GaN

Li, Yanchen (Key Laboratory of Artificial Micro-and Nano-structures, Ministry of Education, Wuhan University, Wuhan 430072, Hubei, China); Yu, Sheng; Meng, Xianquan; Liu, Yihe; Zhao, Yonghe; Liu, Feng Qi; Wang, Zhanguo Source: Journal of Physics D: Applied Physics, v 46, n 21, May 29, 2013

Database: Compendex

497. Mode analysis for metal-coated nanocavity by three-dimensional S-matrix method

Yao, Qi-Feng (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Huang, Yong-Zhen; Yang, Yue-De; Zou, Ling-Xiu; Lv, Xiao-Meng; Long, Heng; Xiao, Jin-Long; Guo, Chu-Cai Source: Journal of the Optical Society of America B: Optical Physics, v 30, n 5, p 1335-1341, May 2013

Database: Compendex

498. High-performance energy-storage devices based on WO3 nanowire arrays/carbon cloth integrated electrodes

Gao, Lina (Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China); Wang, Xianfu; Xie, Zhong; Song, Weifeng; Wang, Lijing; Wu, Xiang; Qu, Fengyu; Chen, Di; Shen, Guozhen Source: Journal of Materials Chemistry A, v 1, n 24, p 7167-7173, June 28, 2013

Database: Compendex

499. Mach-Zehnder-based five-port silicon router for optical interconnects

Li, Xianyao (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Xiao, Xi; Xu, Hao; Li, Zhiyong; Chu, Tao; Yu, Jinzhong; Yu, Yude Source: Optics Letters, v 38, n 10, p 1703-1705, May 15, 2013

Database: Compendex

500. Selective synthesis of Sb2S3 nanoneedles and nanoflowers for high performance rigid and flexible photodetectors

Chao, Junfeng (Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China); Liang, Bo; Hou, Xiaojuan; Liu, Zhe; Xie, Zhong; Liu, Bin; Song, Weifeng; Chen, Gui; Chen, Di; Shen, Guozhen Source: Optics Express, v 21, n 11, p 13639-13647, June 3, 2013

Database: Compendex

501. Multibistability and self-pulsation in nonlinear high-Q silicon microring resonators considering thermo-optical effect

Zhang, Libin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Fei, Yonghao; Cao, Tongtong; Cao, Yanmei; Xu, Qingyang; Chen, Shaowu Source: Physical Review A - Atomic, Molecular, and Optical Physics, v 87, n 5, May 6, 2013

Database: Compendex

502. Observation of photo darkening in self assembled InGaAs/GaAs quantum dots

Zhang, Hongyi (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Chen, Yonghai; Zhou, Xiaolong; Jia, Yanan; Ye, Xiaoling; Xu, Bo; Wang, Zhanguo Source: Journal of Applied Physics, v 113, n 17, May 7, 2013

Database: Compendex

503. High performance thin film transistors based on regioregular poly(3-dodecylthiophene)-sorted large diameter semiconducting single-walled carbon nanotubes

Wang, Chao (Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, China); Qian, Long; Xu, Wenya; Nie, Shuhong; Gu, Weibing; Zhang, Jianhui; Zhao, Jianwen; Lin, Jian; Chen, Zheng; Cui, Zheng Source: Nanoscale, v 5, n 10, p 4156-4161, May 21, 2013

Database: Compendex

504. Error analysis of InP arrayed waveguide grating

Pan, Pan (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); An, Jun-Ming; Wang, Liang-Liang; Zhang, Li-Yao; Wang, Yue; Hu, Xiong-Wei Source: Guangzi Xuebao/Acta Photonica Sinica, v 42, n 3, p 293-297, March 2013 Language: Chinese

Database: Compendex

505. Fiber optic accelerometer based on clamped beam

Zhang, Wentao (Optoelectronics System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing,100083, China); Li, Fang Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8759, 2013, Eighth International Symposium on Precision Engineering Measurements and Instrumentation

Database: Compendex

506. Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire

He, Yu (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yu, Ying; Li, Mi-Feng; He, Ji-Fang; He, Yu-Ming; Wei, Yu-Jia; Zha, Guo-Wei; Shang, Xiang-Jun; Wang, Juan; Wang, Li-Juan; Wang, Guo-Wei; Ni, Hai-Qiao; Lu, Chao-Yang; Niu, Zhi-Chuan Source: Nano Letters, v 13, n 4, p 1399-1404, April 10, 2013

Database: Compendex

507. A chirped subwavelength grating with both reflection and transmission focusing

Lv, Xiaomin (College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China); Qiu, Weibin; Wang, Jia-Xian; Ma, Yuhui; Zhao, Jing; Li, Mengke; Yu, Hongyan; Pan, Jiaoqing Source: IEEE Photonics Journal, v 5, n 2, 2013

Database: Compendex

508. Five-port optical router based on microring switches for photonic networks-on-chip

Ji, Ruiqiang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xu, Jiang; Yang, Lin Source: IEEE Photonics Technology Letters, v 25, n 5, p 492-495, 2013

Database: Compendex

509. High efficiency and high power continuous-wave semiconductor terahertz lasers at ~3.1 THz

Liu, Junqi (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Chen, Jianyan; Wang, Tao; Li, Yanfang; Liu, Fengqi; Li, Lu; Wang, Lijun; Wang, Zhanguo Source: Solid-State Electronics, v 81, p 68-71, 2013

Database: Compendex

510. Far infrared response of silicon nanowire arrays

Fobelets, K. (Department of Electrical and Electronic Engineering, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom); Li, C.B.; Coquillat, D.; Arcade, P.; Teppe, F. Source: RSC Advances, v 3, n 13, p 4434-4439, April 7, 2013

Database: Compendex

511. Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy

Zhou, Kun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China); Liu, Jianping; Zhang, Shuming; Li, Zengcheng; Feng, Meixin; Li, Deyao; Zhang, Liqun; Wang, Feng; Zhu, Jianjun; Yang, Hui Source: Journal of Crystal Growth, 2013

Article in Press

Database: Compendex

512. Stable p- and n-type doping of few-layer graphene/graphite

Meng, Xiuqing (Research Center for Light Emitting Diodes (LED), Zhejiang Normal University, Jinhua 321004, China); Tongay, Sefaattin; Kang, Jun; Chen, Zhanghui; Wu, Fengmin; Li, Shu-Shen; Xia, Jian-Bai; Li, Jingbo; Wu, Junqiao Source: Carbon, v 57, p 507-514, June 2013

Database: Compendex

513. Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping

Yang, Xiaoguang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Kefan; Gu, Yongxian; Ni, Haiqiao; Wang, Xiaodong; Yang, Tao; Wang, Zhanguo Source: Solar Energy Materials and Solar Cells, v 113, p 144-147, 2013

Database: Compendex

514. Spectra of circular and linear photogalvanic effect at inter-band excitation in In0.15Ga0.85As/Al0.3Ga 0.7As multiple quantum wells

Yu, Jinling (College of Physics and Information Engineering, Institute of Micro/Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, Fujian Province, China); Chen, Yonghai; Cheng, Shuying; Lai, Yunfeng Source: Physica E: Low-Dimensional Systems and Nanostructures, v 49, p 92-96, 2013

Database: Compendex

515. Highly nonlinear property and threshold voltage of Sc2O 3 doped ZnO-Bi2O3-based varistor ceramics

Xu, Dong (School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China); Wu, Jieting; Jiao, Lei; Xu, Hongxing; Zhang, Peimei; Yu, Renhong; Cheng, Xiaonong Source: Journal of Rare Earths, v 31, n 2, p 158-163, February 2013

Database: Compendex

516. Generation of pure bulk valley current in graphene

Jiang, Yongjin (Center for Statistical and Theoretical Condensed Matter Physics, Department of Physics, Zhejiang Normal University, Jinhua 321004, China); Low, Tony; Chang, Kai; Katsnelson, Mikhail I.; Guinea, Francisco Source: Physical Review Letters, v 110, n 4, January 23, 2013

Database: Compendex

517. Structural, morphological and magnetic characteristics of Tb-implanted GaN and AlGaN films

Gao, Xingguo (College of Physics and Electronics, Shandong Normal University, Jinan 250014, China); Liu, Chao; Yin, Chunhai; Tao, Dongyan; Yang, Cheng; Man, Baoyuan Source: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, v 178, n 6, p 349-353, April 1, 2013

Database: Compendex

518. Improvement of n/i interface layer properties in microcrystalline silicon solar cell

Zeng, Xiangbo (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Jinyan; Xie, Xiaobing; Yang, Ping; Li, Hao; Xiao, Haibo; Zhang, Xiaodong; Wang, Qiming Source: Key Engineering Materials, v 537, p 193-196, 2013, Inorganic Thin Films and Coatings

Database: Compendex

519. High-Q modes in defected microcircular resonator confined by metal layer for unidirectional emission

Yao, Qi-Feng (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Huang, Yong-Zhen; Lin, Jian-Dong; Lv, Xiao-Meng; Zou, Ling-Xiu; Long, Heng; Yang, Yue-De; Xiao, Jin-Long Source: Optics Express, v 21, n 2, p 2165-2170, January 28, 2013

Database: Compendex

520. 0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-ybuffers

Ji, Lian (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China); Lu, Shu-Long; Jiang, De-Sheng; Zhao, Yong-Ming; Tan, Ming; Zhu, Ya-Qi; Dong, Jian-Rong Source: Chinese Physics B, v 22, n 2, February 2013

Database: Compendex

521. Evolution of electronic structure in atomically thin sheets of ws 2 and wse2

Zhao, Weijie (Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore); Ghorannevis, Zohreh; Chu, Leiqiang; Toh, Minglin; Kloc, Christian; Tan, Ping-Heng; Eda, Goki Source: ACS Nano, v 7, n 1, p 791-797, January 22, 2013

Database: Compendex

522. Band offsets and heterostructures of two-dimensional semiconductors

Kang, Jun (Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Tongay, Sefaattin; Zhou, Jian; Li, Jingbo; Wu, Junqiao Source: Applied Physics Letters, v 102, n 1, January 7, 2013

Database: Compendex

523. The measurement of magneto-optical Kerr effect of ultrathin films in a pulsed magnetic field



Chen, Xi (SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Qian, Xuan; Meng, Kangkang; Zhao, Jianhua; Ji, Yang Source: Measurement: Journal of the International Measurement Confederation, v 46, n 1, p 52-56, January 2013

Database: Compendex
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