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Database: Compendex 59. Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer Li, Hongjian (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Kang, Junjie; Li, Panpan; Ma, Jun; Wang, Hui; Liang, Meng; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Wang, Guohong Source: Applied Physics Letters, v 102, n 1, January 7, 2013 Database: Compendex 60. Influence of Ni and Au/Ni catalysts on GaN nanowire growth Zhao, Danna (Department of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China); Huang, Hui; Wu, Haibo; Ren, Mingkun; Zhu, Huichao; Liu, Yan; Sun, Baojuan Source: Physica Status Solidi (A) Applications and Materials Science, v 210, n 12, p 2689-2692, December 2013 Database: Compendex 61. Phosphor-free, color-tunable monolithic InGaN light-emitting diodes Li, Hongjian (Semiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Panpan; Kang, Junjie; Li, Zhi; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Wang, Guohong Source: Applied Physics Express, v 6, n 10, October 2013 Database: Compendex 62. Improved open-circuit voltage of silicon nanowires solar cells by surface passivation Yang, Ping (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zeng, Xiangbo; Xie, Xiaobing; Zhang, Xiaodong; Li, Hao; Wang, Zhanguo Source: RSC Advances, v 3, n 47, p 24971-24974, December 21, 2013 Database: Compendex 63. Tunable mode-locked external-cavity quantum-dot laser Wu, Jian (Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Jin, Peng; Li, Xin-Kun; Wei, Heng; Wu, Ju; Wang, -Zhan-Guo Source: Nanophotonics, Nanoelectronics and Nanosensor, N3 2013, p NSu2B.3, 2013, Nanophotonics, Nanoelectronics and Nanosensor, N3 2013 Database: Compendex 64. Transient thermal characteristics related to catastrophic optical damage in high power AlGaAs/GaAs laser diodes Qiao, Yanbin (School of Electronic Information and Control Engineering, Beijing University of Technology, No.100 Pingleyuan street, 100124 Beijing, China); Feng, Shiwei; Xiong, Cong; Zhu, Hui; Ma, Xiaoyu; Yue, Yuan Source: Physica Status Solidi (A) Applications and Materials Science, v 210, n 11, p 2379-2383, November 2013 Database: Compendex 65. On-chip optical matrix-vector multiplier Yang, Lin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Zhang, Lei; Ji, Ruiqiang Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8855, 2013, Optics and Photonics for Information Processing VII Database: Compendex 66. Analysis of effects of front and back surface dopants on silicon vertical multi-junction solar cell by 2D numerical simulation Xing, Yupeng (State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Han, Peide; Wang, Shuai; Liang, Peng; Lou, Shishu; Zhang, Yuanbo; Hu, Shaoxu; Zhu, Huishi; Mi, Yanhong; Zhao, Chunhua Source: Science China Technological Sciences, v 56, n 11, p 2798-2807, November 2013, Special Topic on Nano Energy and Piezotronics (2615-2657) Special Topic on Space Sciences (2658-2689) Database: Compendex 67. Measurement of thermal refractive index coefficients of nonlinear optical crystal RbBe2BO3F2 Zhai, Naixia (Beijing Center for Crystal Research and Development, Key Laboratory of Functional Crystals and Laser Technology, Chinese Academy of Sciences, Beijing 100190, China); Wang, Lirong; Liu, Lijuan; Wang, Xiaoyang; Zhu, Yong; Chen, Chuangtian Source: Optical Materials, v 36, n 2, p 333-336, December 2013 Database: Compendex 68. Integrated waveguide Bragg gratings for microwave photonics signal processing Burla, Maurizio (Institut National de la Recherche Scientifique-Energie, Materiaux et Telecommunications (INRS-EMT) 1650 Boulevard Lionel-Boulet, Varennes, QC, J3X 1S2, Canada); Cortes, Luis Romero; Li, Ming; Wang, Xu; Chrostowski, Lukas; Azana, Jose Source: Optics Express, v 21, n 21, p 25120-25147, October 21, 2013 Database: Compendex 69. Rapid thermal annealing on GaSb thin films grown by Molecular Beam Epitaxy on GaAs substrates Hao, Rui Ting (Institute of Solar energy, Yunnan Normal University, Kunming, Yunnan Province,650092, China); Guo, Jie; Deng, Shu Kang; Liu, Ying; Miao, Yan Mei; Xu, Ying Qiang Source: Advanced Materials Research, v 787, p 143-147, 2013, Advanced Materials Researches, Engineering and Manufacturing Technologies in Industry Database: Compendex 70. Study of data format transform with optical waveguide resonators Zhang, Li-Bin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Chen, Shao-Wu; Fei, Yong-Hao; Cao, Tong-Tong; Cao, Yan-Mei; Lei, Xun Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 19, 2013 Language: Chinese Database: Compendex 71. Effect of the thickness of Bi2Se3 sheets on the morphologies of Bi2Se3-ZnS nanocomposites and improved photoresponsive characteristic Li, Renxiong (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Wang, Meili; Meng, Xiuqing; Wei, Zhongming Source: Journal of Materials Science: Materials in Electronics, v 24, n 11, p 4197-4203, November 2013 Database: Compendex 72. 16-Channel fiber laser sensing system based on phase generated carrier algorithm Fang, Gaosheng (Optoelectronics System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xu, Tuanwei; Li, Fang Source: IEEE Photonics Technology Letters, v 25, n 22, p 2185-2188, 2013 Database: Compendex 73. Adsorption and diffusion of Pb(II) on the kaolinite(001) surface: A density-functional theory study He, Man-Chao (State Key Laboratory of Geomechanics and Deep Underground Engineering, China University of Mining and Technology, Beijing 100083, China); Zhao, Jian; Wang, Shuang-Xi Source: Applied Clay Science, v 85, n 1, p 74-79, November 2013 Database: Compendex 74. Direct generation of broadband chaos by a monolithic integrated semiconductor laser chip Wu, Jia-Gui (School of Physics, Southwest University, Chongqing 400715, China); Zhao, Ling-Juan; Wu, Zheng-Mao; Lu, Dan; Tang, Xi; Zhong, Zhu-Qiang; Xia, Guang-Qiong Source: Optics Express, v 21, n 20, p 23358-23364, October 7, 2013 Database: Compendex 75. Electrical and optical properties of a high-voltage large area blue light-emitting diode Wang, Wei (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Science, Suzhou, Jiangsu 215123, China); Cai, Yong; Huang, Wei; Li, Hai-Ou; Zhang, Bao-Shun Source: Japanese Journal of Applied Physics, v 52, n 8 PART 2, August 2013, Recent Advances in Nitride Semiconductors Database: Compendex 76. Effect of arc characteristics on the properties of large size diamond wafer prepared by DC arc plasma jet CVD Li, C.M. (School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China); Zhu, R.H.; Liu, J.L.; Chen, L.X.; Guo, J.C.; Hua, C.Y.; Hei, L.F.; Wei, J.J.; Wang, J.J.; Feng, Z.H.; Guo, H.; Lu, F.X. Source: Diamond and Related Materials, v 39, p 47-52, 2013 Database: Compendex 77. Transmission properties of continuous terahertz waves based on metamaterials Luo, Jun (College of Science, Huazhong Agricultural University, Wuhan 430070, China); Gong, Jinhui; Zhang, Xinyu; Ji, An; Xie, Changsheng; Zhang, Tianxu Source: Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, v 42, n 7, p 1743-1747, July 2013 Language: Chinese Database: Compendex 78. Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer Peng, Enchao (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Hou, Xun; Wang, Zhanguo Source: Journal of Alloys and Compounds, v 576, p 48-53, 2013 Database: Compendex 79. Analysis of vertical radiation loss and far-field pattern for microcylinder lasers with an output waveguide Lv, Xiao-Meng (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Huang, Yong-Zhen; Yang, Yue-De; Long, Heng; Zou, Ling-Xiu; Yao, Qi-Feng; Jin, Xin; Xiao, Jin-Long; Du, Yun Source: Optics Express, v 21, n 13, p 16069-16074, July 1, 2013 Database: Compendex 80. Anisotropic current-controlled magnetization reversal in the ferromagnetic semiconductor (Ga,Mn)As Li, Yuanyuan (SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, 100083 Beijing, China); Cao, Y.F.; Wei, G.N.; Li, Yanyong; Ji, Y.; Wang, K.Y.; Edmonds, K.W.; Campion, R.P.; Rushforth, A.W.; Foxon, C.T.; Gallagher, B.L. Source: Applied Physics Letters, v 103, n 2, July 8, 2013 Database: Compendex 81. Doping and electrical properties of cubic boron nitride thin films: A critical review Zhang, X.W. (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083, People's Republic of China) Source: Thin Solid Films, 2013 Article in Press Database: Compendex 82. Quantum efficiency enhancement of 530nm InGaN green light-emitting diodes with shallow quantum well Li, Hongjian (Semiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Panpan; Kang, Junjie; Li, Zhi; Zhang, Yiyun; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Li, Jinmin; Wang, Guohong Source: Applied Physics Express, v 6, n 5, May 2013 Database: Compendex 83. Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials Zhang, Bai-Qiang (School of Physics and Technology, University of Jinan, Jinan 250022, China); Zheng, Zhong-Shan; Yu, Fang; Ning, Jin; Tang, Hai-Ma; Yang, Zhi-An Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 11, June 5, 2013 Language: Chinese Database: Compendex 84. Thermal analysis of remote phosphor in LED modules Dong, Mingzhi (Beijing Research Centre, Delft University of Technology, Beijing 100083, China); Wei, Jia; Ye, Huaiyu; Yuan, Cadmus; Zhang, Kouchi Source: Journal of Semiconductors, v 34, n 5, May 2013 Database: Compendex 85. Study on improving the compactness of SiO2 thin film by PECVD Guo, Wen-Tao (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Beijing 100083, China); Tan, Man-Qing; Jiao, Jian; Guo, Xiao-Feng; Sun, Ning-Ning Source: Rengong Jingti Xuebao/Journal of Synthetic Crystals, v 42, n 4, p 577-581, April 2013 Language: Chinese Database: Compendex 86. Anomalous circular photogalvanic effect of the spin-polarized two-dimensional electron gas in Mg0.2Zn0.8O/ZnO heterostructures at room temperature Duan, J.X. (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China); Tang, N.; Ye, J.D.; Mei, F.H.; Teo, K.L.; Chen, Y.H.; Ge, W.K.; Shen, B. Source: Applied Physics Letters, v 102, n 19, May 13, 2013 Database: Compendex 87. Fast tunable and broadband microwave sweep-frequency source based on photonic technology Zhu, Ninghua (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Du, Yuanxin; Wu, Xuming; Zheng, Jianyu; Wang, Hui; Liu, Jianguo Source: Science China Technological Sciences, v 56, n 3, p 612-616, March 2013 Database: Compendex 88. A high power picosecond Nd:YVO4 master oscillator power amplifier system pumped by 880 nm diodes Yan, S. (Laboratory of All-solid-state Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yan, X.; Yu, H.; Zhang, L.; Guo, L.; Sun, W.; Hou, W.; Lin, X. Source: Laser Physics, v 23, n 7, July 2013 Database: Compendex 89. Hybrid InGaAsP-Si evanescent laser by selective-area metal-bonding method Yuan, Lijun (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China); Tao, Li; Yu, Hongyan; Chen, Weixi; Lu, Dan; Li, Yanping; Ran, Guangzhao; Pan, Jiaoqing Source: IEEE Photonics Technology Letters, v 25, n 12, p 1180-1183, 2013 Database: Compendex 90. Numerical analysis on quantum dots-in-a-well structures by finite difference method Gong, Liang (Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, Ministry of Education, NanKai University, Tianjin 300457, China); Shu, Yong-Chun; Xu, Jing-Jun; Zhu, Qin-Sheng; Wang, Zhan-Guo Source: Superlattices and Microstructures, v 60, p 311-319, 2013 Database: Compendex 91. Tunable coupling-induced transparency band due to coupled localized electric resonance and quasiguided photonic mode in hybrid plasmonic system Liu, Jietao (Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Xu, Binzong; Hu, Haifeng; Zhang, Jing; Wei, Xin; Xu, Yun; Song, Guofeng Source: Optics Express, v 21, n 11, p 13386-13393, June 3, 2013 Database: Compendex 92. High efficiency broadband polarization converter based on tapered slot waveguide Fei, Yonghao (State Key Laboratory on Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Libin; Cao, Tongtong; Cao, Yanmei; Chen, Shaowu Source: IEEE Photonics Technology Letters, v 25, n 9, p 879-881, 2013 Database: Compendex 93. Elastic properties of tetragonal BiFeO3 from first-principles calculations Dong, Huafeng (Department of Physics, Tsinghua University, Beijing 100084, China); Chen, Changqing; Wang, Shanying; Duan, Wenhui; Li, Jingbo Source: Applied Physics Letters, v 102, n 18, May 6, 2013 Database: Compendex 94. Perpendicularly magnetized Mn x Ga films: Promising materials for future spintronic devices, magnetic recording and permanent magnets Zhu, Lijun (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zhao, Jianhua Source: Applied Physics A: Materials Science and Processing, v 111, n 2, p 379-387, May 2013, Spintronics Applications Database: Compendex 95. Enhanced performance of GaN-based light-emitting diodes with graphene/Ag nanowires hybrid films Li, Zhi (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Kang, Junjie; Liu, Zhiqiang; Du, Chengxiao; Lee, Xiao; Li, Xiao; Wang, Liancheng; Yi, Xiaoyan; Zhu, Hongwei; Wang, Guohong Source: AIP Advances, v 3, n 4, 2013 Database: Compendex 96. Ultraviolet detector based on SrZr0.1Ti0.9O 3 film Zhang, Min (State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012, China); Chen, Yu; Zhang, Haifeng; Chen, Weiyou; Lv, Kaibo; Ruan, Shengping Source: IEEE Electron Device Letters, v 34, n 3, p 420-422, 2013 Database: Compendex 97. Anomalous electron collimation in HgTe quantum wells with inverted band structure Zou, Y.L. (Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China); Zhang, L.B.; Song, J.T. Source: Journal of Physics Condensed Matter, v 25, n 7, February 20, 2013 Database: Compendex 98. Interfacial study and energy-band alignment of annealed Al 2O3 films prepared by atomic layer deposition on 4H-SiC Zhang, Feng (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Sun, Guosheng; Zheng, Liu; Liu, Shengbei; Liu, Bin; Dong, Lin; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping Source: Journal of Applied Physics, v 113, n 4, January 28, 2013 Database: Compendex 99. Vertical cavity surface emitting laser transverse mode and polarization control by elliptical hole photonic crystal Cao, Tian (Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124, China); Xu, Chen; Xie, Yi-Yang; Kan, Qiang; Wei, Si-Min; Mao, Ming-Ming; Chen, Hong-Da Source: Chinese Physics B, v 22, n 2, February 2013 Database: Compendex 100. Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0 1 1)-oriented vanadium dioxide films grown by magnetron sputtering Yu, Qian (Department of Electronic Engineering, Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241, China); Li, Wenwu; Liang, Jiran; Duan, Zhihua; Hu, Zhigao; Liu, Jian; Chen, Hongda; Chu, Junhao Source: Journal of Physics D: Applied Physics, v 46, n 5, February 6, 2013 Database: Compendex 101. High temperature operation of edge-emitting photonic-crystal distributed-feedback quantum cascade lasers at λ～7.6 μm Zhang, J.C. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, F.Q.; Wang, L.J.; Zhai, S.Q.; Yao, D.Y.; Liu, J.Q.; Wang, Z.G. Source: Physica E: Low-Dimensional Systems and Nanostructures, v 48, p 42-45, 2013 Database: Compendex 102. CMOS-compatible vertical grating coupler with quasi Mach-Zehnder characteristics Zhang, Zanyun (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China); Huang, Beiju; Cheng, Chuantong; Chen, Hongda Source: IEEE Photonics Technology Letters, v 25, n 3, p 224-227, 2013 Database: Compendex 103. Influence of Substrate Temperature on Stress and Morphology Characteristics of Co Doped ZnO Films Prepared by Laser-Molecular Beam Epitaxy Liu, Yunyan (School of Science, Shandong University of Technology, Zibo 255049, China); Yang, Shanying; Wei, Gongxiang; Pan, Jiaoqing; Yuan, Yuzhen; Cheng, Chuanfu Source: Journal of Materials Science and Technology, v 29, n 12, p 1134-1138, December 2013 Database: Compendex 104. A 1.65 μm three-section distributed Bragg reflector (DBR) laser for CH4 gas sensors Niu, Bin (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yu, Hongyan; Yu, Liqiang; Zhou, Daibing; Lu, Dan; Zhao, Lingjuan; Pan, Jiaoqing; Wang, Wei Source: Journal of Semiconductors, v 34, n 10, October 2013 Database: Compendex 105. An FPGA-based phase self-calibration system for micro-current sensor Chen, Gang (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Chen, Xu; Chen, Tianxiang; Gong, Guoliang; Bian, Yi; Lu, Huaxiang Source: Dianli Xitong Zidonghua/Automation of Electric Power Systems, v 37, n 20, p 102-107, October 25, 2013 Language: Chinese Database: Compendex 106. Design of a low-power 433/915-MHz RF front-end with a current-reuse common-gate LNA Jing, Yiou (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Lu, Huaxiang Source: Journal of Semiconductors, v 34, n 10, October 2013 Database: Compendex 107. Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate Liu, Zhi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Cheng, Bu-Wen; Li, Ya-Ming; Li, Chuan-Bo; Xue, Chun-Lai; Wang, Qi-Ming Source: Chinese Physics B, v 22, n 11, November 2013 Database: Compendex 108. XOR/XNOR directed logic circuit based on coupled-resonator-induced transparency Tian, Yonghui (Institute of Microelectronics, Lanzhou University, Lanzhou, Gansu 730000, China); Zhang, Lei; Yang, Lin Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8855, 2013, Optics and Photonics for Information Processing VII Database: Compendex 109. Thermoelectric transport through a quantum dot with a magnetic impurity Yu, Zhen (College of Engineering, Bohai University, Jinzhou 121013, China); Guo, Yu; Zheng, Jun; Chi, Feng Source: Chinese Physics B, v 22, n 11, November 2013 Database: Compendex 110. GaN-based light emitting diodes with hybrid micro-nano patterned sapphire substrate Cheng, Yan (Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Liancheng; Zhang, Yiyun; Zheng, Haiyang; Ma, Jun; Yi, Xiaoyan; Wang, Guohong; Li, Jinmin Source: ECS Solid State Letters, v 2, n 11, p Q93-Q97, 2013 Database: Compendex 111. A low power 2.4 GHz RF transceiver for ZIGBEE applications Liu, Weiyang (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Chen, Jingjing; Wang, Haiyong; Wu, Nanjian Source: Journal of Circuits, Systems and Computers, v 22, n 9, October 2013 Database: Compendex 112. An interpolation algorithm for image topological deformation based on triangle coordinate system Zhang, Zhongwei (Laboratory of Artificial Neural Networks, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xiao, Quan; Wang, Shoujue Source: Jisuanji Fuzhu Sheji Yu Tuxingxue Xuebao/Journal of Computer-Aided Design and Computer Graphics, v 25, n 11, p 1701-1708, November 2013 Language: Chinese Database: Compendex 113. Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography Wu, Kui (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Yiyun; Wei, Tongbo; Lan, Ding; Sun, Bo; Zheng, Haiyang; Lu, Hongxi; Chen, Yu; Wang, Junxi; Luo, Yi; Li, Jinmin Source: AIP Advances, v 3, n 9, 2013 Database: Compendex 114. Optical investigation of strong exciton localization in high Al composition AlxGa1-xN alloys Fan, Shunfei (State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China); Qin, Zhixin; He, Chenguang; Hou, Mengjun; Wang, Xinqiang; Shen, Bo; Li, Wei; Wang, Weiying; Mao, Defeng; Jin, Peng; Yan, Jianchang; Dong, Peng Source: Optics Express, v 21, n 21, p 24497-24503, October 21, 2013 Database: Compendex 115. Magnetic and Gilbert damping properties of L21-Co 2FeAl film grown by molecular beam epitaxy Qiao, Shuang (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Nie, Shuaihua; Zhao, Jianhua; Huo, Yan; Wu, Yizheng; Zhang, Xinhui Source: Applied Physics Letters, v 103, n 15, October 7, 2013 Database: Compendex 116. Tunable density of two-dimensional electron gas in GaN-based heterostructures: The effects of buffer acceptor and channel width Peng, Enchao (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Qu, Shenqi; Kang, He; Hou, Xun; Wang, Zhanguo Source: Journal of Applied Physics, v 114, n 15, October 21, 2013 |