Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We study theoretically the effect of the in-plane magnetic field on two-dimensional electron gas transport in GaAs/InGaAs single quantum well structure. Our results show that, due to the scatterers (GaSb quantum dots) are one-side distributed, the in-plane magnetic field leads to an anisotropic scattering probability, which results in a higher mobility along the direction perpendicular to the magnetic field. Besides, compared with the no magnetic field case, the mobility shows a parabolic increasing trend as the in-plane magnetic field strength increases. (C) 2013 AIP Publishing LLC.

Addresses: [Jin, Dong-Dong; Yang, Shao-Yan; Li, Hui-jie; Zhang, Heng; Wang, Jian-xia; Yang, Tao; Liu, Xiang-Lin; Zhu, Qin-Sheng; Wang, Zhan-Guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Jin, Dong-Dong; Yang, Shao-Yan; Li, Hui-jie; Zhang, Heng; Wang, Jian-xia; Yang, Tao; Liu, Xiang-Lin; Zhu, Qin-Sheng; Wang, Zhan-Guo] Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

[Jin, Dong-Dong; Zhang, Liu-Wan] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

Reprint Address: Jin, DD (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: ddjin2009@semi.ac.cn; sh-yyang@semi.ac.cn; qszhu@semi.ac.cn

ISSN: 0021-8979

Record 224 of 495

Title: A sphere-cut-splice crossover for the evolution of cluster structures

Author(s): Chen, ZH (Chen, Zhanghui); Jiang, XW (Jiang, Xiangwei); Li, JB (Li, Jingbo); Li, SS (Li, Shushen)

Source: JOURNAL OF CHEMICAL PHYSICS Volume: 138 Issue: 21 Article Number: 214303 DOI: 10.1063/1.4807091 Published: JUN 7 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A new crossover operator is proposed to evolve the structures of the atomic clusters. It uses a sphere rather than a plane to cut and splice the parent structures. The child cluster is constructed by the atoms of one parent which lie inside the sphere, and the atoms of the other parent which lie outside the sphere. It can reliably produce reasonable offspring and preserve the good schemata in parent structures, avoiding the drawbacks of the classical plane-cut-splice crossover in the global searching ability and the local optimization speed. Results of Lennard-Jones clusters (30 <= N <= 500) show that at the same settings the genetic algorithm with the sphere-cut-splice crossover exhibits better performance than the one with the plane-cut-splice crossover. The average number of local minimizations needed to find the global minima and the average number of energy evaluation of each local minimization in the sphere scheme is 0.8075 and 0.8386 of that in the plane scheme, respectively. The mean speed-up ratio for the entire testing clusters reaches 1.8207. Moreover, the sphere scheme is particularly suitable for large clusters and the mean speed-up ratio reaches 2.3520 for the clusters with 110 <= N <= 500. The comparison with other successful methods in previous studies also demonstrates its good performance. Finally, a further analysis is presented on the statistical features of the cutting sphere and a modified strategy that reduces the probability of using tiny and large spheres exhibits better global search. (C) 2013 AIP Publishing LLC.

Addresses: [Chen, Zhanghui; Jiang, Xiangwei; Li, Jingbo; Li, Shushen] Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Chen, ZH (reprint author), Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jbli@semi.ac.cn

ISSN: 0021-9606

Record 225 of 495

Title: Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor

Author(s): Li, XM (Li, Xiaoming); Han, WH (Han, Weihua); Wang, H (Wang, Hao); Ma, LH (Ma, Liuhong); Zhang, YB (Zhang, Yanbo); Du, YD (Du, Yandong); Yang, FH (Yang, Fuhua)

Source: APPLIED PHYSICS LETTERS Volume: 102 Issue: 22 Article Number: 223507 DOI: 10.1063/1.4809828 Published: JUN 3 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: The electron mobility in a heavily n-doped junctionless nanowire transistor is demonstrated by the experimental investigation of the transfer characteristics at low temperatures. It is found that the minimum electron mobility at a critical low temperature results from the interplay of the thermal activation and impurity scattering. The temperature-dependence tendency of the normalized electron mobility by theoretical calculation and experimental extraction reveals that the thermal activation is responsible for the impact of the donor ionization and thermal energy on the electron mobility. (C) 2013 AIP Publishing LLC.

Addresses: [Li, Xiaoming; Han, Weihua; Wang, Hao; Ma, Liuhong; Zhang, Yanbo; Du, Yandong; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China.

Reprint Address: Li, XM (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China.

E-mail Addresses: weihua@semi.ac.cn

ISSN: 0003-6951

Record 226 of 495

Title: Tunable coupling-induced transparency band due to coupled localized electric resonance and quasiguided photonic mode in hybrid plasmonic system

Author(s): Liu, JT (Liu, Jietao); Xu, BZ (Xu, Binzong); Hu, HF (Hu, Haifeng); Zhang, J (Zhang, Jing); Wei, X (Wei, Xin); Xu, Y (Xu, Yun); Song, GF (Song, Guofeng)

Source: OPTICS EXPRESS Volume: 21 Issue: 11 Pages: 13386-13393 DOI: 10.1364/OE.21.013386 Published: JUN 3 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A numerical and theoretical study is presented on the exhibition of tunable narrow band coupled-induced transparency phenomenon in a hybrid waveguide-plasmon system consisting of gold twin nanowires array embedded in a slab waveguide. We show that, at slightly non-normal incidence, a properly designed splitting of transmission with narrow transparency peaks may occur at a given wavelength, depending on the angle of incidence. This leads to the wavelength-selective high quality coupled-induced transparency resonance at optical frequencies. By adjusting the gap distance of the pair gratings, the coupled-induced transparency band can be switched between on-state and off-state, which provides us possibilities to develop controllable plasmonic functional devices employing plasmonic nanostructures. (C) 2013 Optical Society of America

Addresses: [Liu, Jietao; Xu, Binzong; Hu, Haifeng; Zhang, Jing; Wei, Xin; Xu, Yun; Song, Guofeng] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Liu, JT (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: sgf@semi.ac.cn

ISSN: 1094-4087

Record 227 of 495

Title: Selective synthesis of Sb2S3 nanoneedles and nanoflowers for high performance rigid and flexible photodetectors

Author(s): Chao, JF (Chao, Junfeng); Liang, B (Liang, Bo); Hou, XJ (Hou, Xiaojuan); Liu, Z (Liu, Zhe); Xie, Z (Xie, Zhong); Liu, B (Liu, Bin); Song, WF (Song, Weifeng); Chen, G (Chen, Gui); Chen, D (Chen, Di); Shen, GZ (Shen, Guozhen)

Source: OPTICS EXPRESS Volume: 21 Issue: 11 Pages: 13639-13647 DOI: 10.1364/OE.21.013639 Published: JUN 3 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Needle-like and flower-like antimony sulfide nanostructures were synthesized and applied for both rigid and flexible photodetectors. Rigid photodetectors based on both nanostructures have the features of linear photocurrent characteristics, low linear dynamic range and good sensitivity to light intensity. Especially, the rigid Sb2S3 nanoflowers photodetector has high photoresponse characteristics and its response time and decay time were found to be relatively fast as 6 ms and 10 ms respectively. The flexible Sb2S3 nanoflowers photodetector has high flexible, light-weight and adequate bendability with a response time of about 0.09 s and recovery time of 0.27 s. Our results revealed that the rigid and flexible photodetectors based on Sb2S3 nanostructures have great potential in next generation optoelectronic devices. (C) 2013 Optical Society of America

Addresses: [Chao, Junfeng; Liang, Bo; Hou, Xiaojuan; Liu, Zhe; Xie, Zhong; Liu, Bin; Song, Weifeng; Chen, Gui; Chen, Di; Shen, Guozhen] HUST, WNLO, Wuhan 430074, Peoples R China.

[Chao, Junfeng; Liang, Bo; Hou, Xiaojuan; Liu, Zhe; Xie, Zhong; Liu, Bin; Song, Weifeng; Chen, Gui; Chen, Di; Shen, Guozhen] HUST, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China.

[Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Chao, JF (reprint author), HUST, WNLO, Wuhan 430074, Peoples R China.

E-mail Addresses: dichen@mail.hust.edu.cn; gzshen@mail.hust.edu.cn

ISSN: 1094-4087

Record 228 of 495

Title: Impedance Immunosensor Based on Interdigitated Array Microelectrodes for Rapid Detection of Avian Influenza Virus Subtype H5

Author(s): Yan, XF (Yan, Xiaofei); Wang, RH (Wang, Ronghui); Lin, JH (Lin, Jianhan); Li, YT (Li, Yuntao); Wang, MH (Wang, Maohua); An, D (An, Dong); Jiao, PR (Jiao, Peirong); Liao, M (Liao, Ming); Yu, YD (Yu, Yude); Li, YB (Li, Yanbin)

Source: SENSOR LETTERS Volume: 11 Issue: 6-7 Special Issue: SI Pages: 1256-1260 DOI: 10.1166/sl.2013.2870 Published: JUN-JUL 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: An impedance immunosensor based on interdigitated array microelectrodes (IDAMs) was developed for rapid and sensitive detection of avian influenza virus (AIV) subtype H5. The surface of the gold microelectrodes was modified with protein A and then immobilized with monoclonal antibodies against an epitope in the hemagglutinin (HA) of AIV H5 subtype. The binding of H5 subtype viruses onto the antibody-modified nnicroelectrodes surface resulted in a change in the impedance, which was measured in a frequency range of 20 Hz to 1 MHz in the presence of 10 mM [Fe(CN)(6)](3-/4-) as a redox probe. An equivalent circuit was introduced to interpret the impedance spectra of this immunosensor system. Experimental and fitting impedance spectra were well matched. The results showed that the binding of AIV H5N1 to the modified microelectrodes surface significantly increased the electron transfer resistance. A linear relationship between the change of the electron transfer resistance and the logarithmic value of H5N1 virus concentration was found in the range of 2(1) to 2(5) HA unit/50 mu l. The detection limit was 2(1) HA unit/50 mu l and the detection time was 1 h. This impedance immunosensor was specific to H5 subtype virus (H5N1) as no detectable signals were generated in the detection of non-target viruses such as AIV H9 subtype and Newcastle disease virus.

Addresses: [Yan, Xiaofei; Wang, Maohua; An, Dong] China Agr Univ, Key Lab Modern Precis Agr Syst Integrat Res, Minist Educ, Beijing 100083, Peoples R China.

[Wang, Ronghui; Lin, Jianhan; Li, Yanbin] Univ Arkansas, Dept Biol & Agr Engn, Fayetteville, AR 72701 USA.

[Li, Yuntao; Yu, Yude] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Jiao, Peirong; Liao, Ming] South China Agr Univ, Coll Vet Med, Guangzhou 510642, Guangdong, Peoples R China.

Reprint Address: Wang, MH (reprint author), China Agr Univ, Key Lab Modern Precis Agr Syst Integrat Res, Minist Educ, Beijing 100083, Peoples R China.

E-mail Addresses: wangmh@cau.edu.cn

ISSN: 1546-198X
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Record 229 of 495

Title: Solution-grown ZnO Nanorods on Femtosecond Laser-microstructured Si Substrates

Author(s): Jia, GZ (Jia, Guozhi); Hao, BX (Hao, Bingxue); Lu, XC (Lu, Xucen); Yao, JH (Yao, Jianghong)

Source: INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE Volume: 8 Issue: 6 Pages: 7976-7983 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: High density ZnO nanorods were prepared on femtosecond laser-restructured Si substrates by the simple and facile sol-gel and chemical bath deposition combination technology. ZnO nanorods, preferentially oriented along the c-axis, were of the hexagonal wurzite structure. The investigation shown that the ultrafast melting and ablation can change the lattice constant during the formation of Si surface microstructure after laser irradiation, which can result in the surface of Si destroyed and rebuild. As a result, the strain between ZnO nanorods and Si can be effectively decreased. The influencing mechanism of laser-restructured Si surface on the characteristics of ZnO nanorods was further analyzed.

Addresses: [Jia, Guozhi] Tianjin Inst Urban Construct, Tianjin 300384, Peoples R China.

[Hao, Bingxue; Lu, Xucen; Yao, Jianghong] Nankai Univ, Minist Educ, Key Lab Adv Tech & Fabricat Weak Light Nonlinear, Tianjin 300457, Peoples R China.

[Jia, Guozhi] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Jia, GZ (reprint author), Tianjin Inst Urban Construct, Tianjin 300384, Peoples R China.

E-mail Addresses: gzjia@semi.ac.cn

ISSN: 1452-3981

Record 230 of 495

Title: Size Effect of Heterostructure Type in Core/Shell Quantum Dot

Author(s): Jia, GZ (Jia, Guozhi); Hao, BX (Hao, Bingxue); Lu, XC (Lu, Xucen); Yao, JH (Yao, Jianghong)

Source: INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE Volume: 8 Issue: 6 Pages: 8167-8174 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Size effect of heterostructure type and exciton properties in ZnTexSe1-x/ZnSe core/shell structure QDs have been investigated by effective-mass approximation method with taking into the Coulomb interaction account. The heterostructure types of QDs can be changed from Type-I, to Type-II with changing of the size of QDs. The spatial separation between electron and hole in QDs can be presence abruptly by adjusting Se molar fraction in the core region and size of QDs. We demonstrate that the quantum confinement effect in the ternary core is a key to the transformation from the type-I to type-II. The transition energies can be widely tuned by the changing the Se molar fraction in the core layer and size of QDs.

Addresses: [Jia, Guozhi] Tianjin Inst Urban Construct, Tianjin 300384, Peoples R China.

[Hao, Bingxue; Lu, Xucen; Yao, Jianghong] Nankai Univ, Minist Educ, Key Lab Adv Tech & Fabricat Weak Light Nonlinear, Tianjin 300457, Peoples R China.

[Jia, Guozhi] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Jia, GZ (reprint author), Tianjin Inst Urban Construct, Tianjin 300384, Peoples R China.

E-mail Addresses: gzjia@semi.ac.cn

ISSN: 1452-3981

Record 231 of 495

Title: The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells

Author(s): Li, L (Li Liang); Zhao, DG (Zhao De-Gang); Jiang, DS (Jiang De-Sheng); Liu, ZS (Liu Zong-Shun); Chen, P (Chen Ping); Wu, LL (Wu Liang-Liang); Le, LC (Le Ling-Cong); Wang, H (Wang Hui); Yang, H (Yang Hui)

Source: CHINESE PHYSICS B Volume: 22 Issue: 6 Article Number: 068802 DOI: 10.1088/1674-1056/22/6/068802 Published: JUN 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: InGaN/GaN p-i-n solar cells, each with an undoped In0.12Ga0.88N absorption layer, are grown on c-plane sapphire substrates by metal-organic chemical vapor deposition. The effects of the thickness and dislocation density of the absorption layer on the collection efficiency of InGaN-based solar cells are analyzed, and the experimental results demonstrate that the thickness of the InGaN layer and the dislocation density significantly affect the performance. An optimized InGaN-based solar cell with a peak external quantum efficiency of 57% at a wavelength of 371 nm is reported. The full width at half maximum of the rocking curve of the (0002) InGaN layer is 180 arcsec.

Addresses: [Li Liang; Zhao De-Gang; Jiang De-Sheng; Liu Zong-Shun; Chen Ping; Wu Liang-Liang; Le Ling-Cong; Yang Hui] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Wang Hui; Yang Hui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

Reprint Address: Zhao, DG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: dgzhao@red.semi.ac.cn

ISSN: 1674-1056
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Record 232 of 495

Title: Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor

Author(s): Yu, YX (Yu Ying-Xia); Lin, ZJ (Lin Zhao-Jun); Luan, CB (Luan Chong-Biao); Wang, YT (Wang Yu-Tang); Chen, H (Chen Hong); Wang, ZG (Wang Zhan-Guo)

Source: CHINESE PHYSICS B Volume: 22 Issue: 6 Article Number: 067203 DOI: 10.1088/1674-1056/22/6/067203 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We simulate the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths using the quasi-two-dimensional (quasi-2D) model. The calculation results obtained using the modified mobility model are found to accord well with the experimental data. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with the electric field in the linear region of the AlGaN/AlN/GaN HFET I-V output characteristics, it is found that the polarization Coulomb field scattering still plays an important role in the electron mobility of AlGaN/AlN/GaN HFETs at the higher drain voltage and channel electric field. As drain voltage and channel electric field increase, the 2DEG density reduces and the polarization Coulomb field scattering increases, as a result, the 2DEG electron mobility decreases.

Addresses: [Yu Ying-Xia; Lin Zhao-Jun; Luan Chong-Biao; Wang Yu-Tang] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.

[Chen Hong] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.

[Wang Zhan-Guo] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Lin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.

E-mail Addresses: linzj@sdu.edu.cn

ISSN: 1674-1056

Record 233 of 495

Title: Highly tunable Terahertz filter with magneto-optical Bragg grating formed in semiconductor-insulator-semiconductor waveguides

Author(s): Li, KW (Li, Kangwen); Ma, XP (Ma, Xunpeng); Zhang, ZY (Zhang, Zuyin); Wang, LN (Wang, Lina); Hu, HF (Hu, Haifeng); Xu, Y (Xu, Yun); Song, GF (Song, Guofeng)

Source: AIP ADVANCES Volume: 3 Issue: 6 Article Number: 062130 DOI: 10.1063/1.4812703 Published: JUN 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A highly tunable terahertz (THz) filter with magneto-optical Bragg grating formed in semiconductor-insulator-semiconductor waveguides is proposed and demonstrated numerically by means of the Finite Element Method. The results reveal that a sharp peak with high Q-value presents in the band gap of Bragg grating waveguide with a defect, and the position of the sharp peak can be modified greatly by changing the intensity of the transverse magnetic field applied to the device. Compared to the situation without magnetic field applied, the shift of the filtered frequency (wavelength) reaches up to 36.1 GHz (11.4 mu m) when 1 T magnetic field is applied. In addition, a simple model to predict the filtered frequency and an effective way to improve the Q-value of the filter are proposed by this paper. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4812703]

Addresses: [Li, Kangwen; Ma, Xunpeng; Zhang, Zuyin; Wang, Lina; Hu, Haifeng; Xu, Yun; Song, Guofeng] Chinese Acad Sci, Inst Semicond, Beijing 10083, Peoples R China.

Reprint Address: Song, GF (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 10083, Peoples R China.

E-mail Addresses: sgf@semi.ac.cn

ISSN: 2158-3226

Record 234 of 495

Title: Flexible Asymmetric Supercapacitors Based upon Co9S8 Nanorod//Co3O4@RuO2 Nanosheet Arrays on Carbon Cloth

Author(s): Xu, J (Xu, Jing); Wang, QF (Wang, Qiufan); Wang, XW (Wang, Xiaowei); Xiang, QY (Xiang, Qingyi); Hang, B (Hang, Bo); Chen, D (Chen, Di); Shen, GZ (Shen, Guozhen)

Source: ACS NANO Volume: 7 Issue: 6 Pages: 5453-5462 DOI: 10.1021/nn401450s Published: JUN 2013

Times Cited in Web of Science: 3

Total Times Cited: 3

Abstract: We have successfully fabricated flexible asymmetric supercapacitors (ASCs) based on acicular Co9S8 nanorod arrays as positive materials and Co3O4@RuO2 nanosheet arrays as negative materials on woven carbon fabrics. Co9S8 nanorod arrays were synthesized by a hydrothermal sulfuration treatment of acicular Co3O4 nanorod arrays, while the RuO2 was directly deposited on the Co3O4 nanorod arrays. Carbon cloth was selected as both the substrate and the current collector for its good conductivity, high flexibility, good physical strength, and lightweight architecture. Both aqueous KOH solutions and polyvinyl alcohol (PVA)/KOH were employed as electrolyte for electrochemical measurements. The as-fabricated ASCs can be cycled reversibly In the range of 0-1.6 V and exhibit superior electrochemical performance with an energy density of 1.21 mWh/cm(3) at a power density of 13.29 W/cm(3) in aqueous electrolyte and an energy density of 1.44 mWh/cm(3) at the power density of 0.89 W/cm(3) in solid-state electrolyte, which are almost 10-fold higher than those reported In early ASC work. Moreover, they present excellent cycling performance at multirate currents and large currents after thousands of cycles. The high-performance nanostructured ASCs have significant potential applications in portable electronics and electrical vehicles.

Addresses: [Xu, Jing; Wang, Qiufan; Wang, Xiaowei; Xiang, Qingyi; Hang, Bo; Chen, Di; Shen, Guozhen] HUST, WNLO, Wuhan 430074, Peoples R China.

[Xu, Jing; Wang, Qiufan; Wang, Xiaowei; Xiang, Qingyi; Hang, Bo; Chen, Di; Shen, Guozhen] HUST, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China.

[Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.