Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

[Liu, Zhe; Luo, Tao; Liang, Bo; Chen, Gui; Yu, Gang; Xie, Xuming; Chen, Di] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China.

Reprint Address: Chen, D (reprint author), Huazhong Univ Sci & Technol, WNLO, Wuhan 430074, Peoples R China.

E-mail Addresses: dichen@mail.hust.edu.cn; gzshen@semi.ac.cn

ISSN: 1998-0124

Record 76 of 495

Title: A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe

Author(s): Chen, P (Chen Ping); Zhao, DG (Zhao De-Gang); Feng, MX (Feng Mei-Xin); Jiang, DS (Jiang De-Sheng); Liu, ZS (Liu Zong-Shun); Zhang, LQ (Zhang Li-Qun); Li, DY (Li De-Yao); Liu, JP (Liu Jian-Ping); Wang, H (Wang Hui); Zhu, JJ (Zhu Jian-Jun); Zhang, SM (Zhang Shu-Ming); Zhang, BS (Zhang Bao-Shun); Yang, H (Yang Hui)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 10 Article Number: 104205 DOI: 10.1088/0256-307X/30/10/104205 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated. The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition. The laser diode array consists of five emitter stripes which share common electrodes on one laser chip. The electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10 kHz frequency and 100 ns pulse width. The laser diode array emits at the wavelength of 409 nm, which is located in the blue-violet region, and the threshold current is 2.9 A. The maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8 nm under the current of 25 A.

Addresses: [Chen Ping; Zhao De-Gang; Feng Mei-Xin; Jiang De-Sheng; Liu Zong-Shun; Yang Hui] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Feng Mei-Xin; Zhang Li-Qun; Li De-Yao; Liu Jian-Ping; Wang Hui; Zhu Jian-Jun; Zhang Shu-Ming; Zhang Bao-Shun; Yang Hui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

Reprint Address: Zhao, DG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: dgzhao@red.semi.ac.cn

ISSN: 0256-307X
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Record 77 of 495

Title: Temperature Characteristics of Monolithically Integrated Wavelength-Selectable Light Sources

Author(s): Han, LS (Han Liang-Shun); Zhu, HL (Zhu Hong-Liang); Zhang, C (Zhang Can); Ma, L (Ma Li); Liang, S (Liang Song); Wang, W (Wang Wei)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 10 Article Number: 108501 DOI: 10.1088/0256-307X/30/10/108501 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The temperature characteristics of monolithically integrated wavelength-selectable light sources are experimentally investigated. The wavelength-selectable light sources consist of four distributed feedback (DFB) lasers, a multimode interferometer coupler, and a semiconductor optical amplifier. The oscillating wavelength of the DFB laser could be modulated by adjusting the device operating temperature. A wavelength range covering over 8.0 nm is obtained with stable single-mode operation by selecting the appropriate laser and chip temperature. The thermal crosstalk caused by the lateral heat spreading between lasers operating simultaneously is evaluated by oscillating-wavelength shift. The thermal crosstalk approximately decreases exponentially as the increasing distance between lasers.

Addresses: [Han Liang-Shun; Zhu Hong-Liang; Zhang Can; Ma Li; Liang Song; Wang Wei] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Zhu, HL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: zhuhl@red.semi.ac.cn

ISSN: 0256-307X

Record 78 of 495

Title: New Energy Storage Option: Toward ZnCo2O4 Nanorods/Nickel Foam Architectures for High-Performance Supercapacitors

Author(s): Liu, B (Liu, Bin); Liu, BY (Liu, Boyang); Wang, QF (Wang, Qiufan); Wang, XF (Wang, Xianfu); Xiang, QY (Xiang, Qingyi); Chen, D (Chen, Di); Shen, GZ (Shen, Guozhen)

Source: ACS APPLIED MATERIALS & INTERFACES Volume: 5 Issue: 20 Pages: 10011-10017 DOI: 10.1021/am402339d Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Hierarchical ZnCo2O4/nickel foam architectures were first fabricated from a simple scalable solution approach, exhibiting outstanding electrochemical performance in supercapacitors with high specific capacitance (similar to 1400 F g(-1) at 1 A g(-1)), excellent rate capability (72.5% capacity retention at 20 A g(-1)), and good cycling stability (only 3% loss after 1000 cycles at 6 A g(-1)). All-solid-state supercapacitors were also fabricated by assembling two pieces of the ZnCo2O4-based electrodes, showing superior performance in terms of high specific capacitance and long cycling stability. Our work confirms that the as-prepared architectures can not only be applied in high energy density fields, but also be used in high power density applications, such as electric vehicles, flexible electronics, and energy storage devices.

Addresses: [Liu, Bin; Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Liu, Bin; Liu, Boyang; Wang, Qiufan; Wang, Xianfu; Xiang, Qingyi; Chen, Di] Huazhong Univ Sci & Technol, WNLO, Wuhan 430074, Peoples R China.

[Liu, Bin; Liu, Boyang; Wang, Qiufan; Wang, Xianfu; Xiang, Qingyi; Chen, Di] Huazhong Univ Sci & Technol, Coll Opt & Elect Informat, Wuhan 430074, Peoples R China.

Reprint Address: Chen, D (reprint author), Huazhong Univ Sci & Technol, WNLO, Wuhan 430074, Peoples R China.

E-mail Addresses: dichen@mail.hust.edu.cn; gzshen@semi.ac.cn

ISSN: 1944-8244

Record 79 of 495

Title: Photovoltaic performance optimization of methyl 4-[6,6]-C61-benzoate based polymer solar cells with thermal annealing approach

Author(s): Chi, D (Chi, Dan); Liu, C (Liu, Chao); Qu, SC (Qu, Shengchun); Zhang, ZG (Zhang, Zhi-Guo); Li, YJ (Li, Yongjun); Li, YL (Li, Yuliang); Wang, JZ (Wang, Jizheng); Wang, ZG (Wang, Zhanguo)

Source: SYNTHETIC METALS Volume: 181 Pages: 117-122 DOI: 10.1016/j.synthmet.2013.08.019 Published: OCT 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A new type of fullerene acceptor, methyl 4-[6,6]-C61-benzoate (MCB), was used to fabricate bulk heterojunction solar cells in combination with poly(3-hexylthiopene) (P3HT) as donor. To optimization of device performance, the effect of annealing temperature was investigated in the range of 80-180 degrees C. And the highest power conversion efficiency (PCE) of 3.49% was achieved after baking the device at 110 degrees C for 10 min. This optimization condition was associated with the surface morphology of blend films as investigated by atomic force microscope and optical microscope. The device parameters were also analyzed by the relationship among the open circuit voltage, the short circuit current density, the reverse saturation current density and the ideality factor. Moreover, the devices were stable and the PCE showed about 90% durability even after 72 days. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Chi, Dan; Qu, Shengchun; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Chi, Dan; Liu, Chao; Zhang, Zhi-Guo; Li, Yongjun; Li, Yuliang; Wang, Jizheng] Chinese Acad Sci, Inst Chem, Being Natl Lab Mol Sci, CAS Key Lab Organ Solids, Beijing 100190, Peoples R China.

Reprint Address: Qu, SC (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: qsc@semi.ac.cn; zgzhangwhu@iccas.ac.cn

ISSN: 0379-6779
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Record 80 of 495

Title: Phosphor-Free, Color-Tunable Monolithic InGaN Light-Emitting Diodes

Author(s): Li, HJ (Li, Hongjian); Li, PP (Li, Panpan); Kang, JJ (Kang, Junjie); Li, Z (Li, Zhi); Li, ZC (Li, Zhicong); Li, J (Li, Jing); Yi, XY (Yi, Xiaoyan); Wang, GH (Wang, Guohong)

Source: APPLIED PHYSICS EXPRESS Volume: 6 Issue: 10 Article Number: 102103 DOI: 10.7567/APEX.6.102103 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We have demonstrated phosphor-free color-tunable monolithic GaN-based light-emitting diodes (LEDs) by inserting an ultrathin 1-nm-thick InGaN shallow quantum well (QW) between deep InGaN QWs and GaN barriers. Without using any phosphors, this monolithic LED chip can be tuned to realize wide-range multicolor emissions from red to yellow under different injection currents. In partical, when the injection current reaches an upper level above 100 mA, the LEDs will achieve white emission with a very high color rending index (CRI) of 85.6. This color-tunable characteristic is attributed to the carrier redistribution in the shallow/deep QWs and the energy band filling effect as well. (c) 2013 The Japan Society of Applied Physics

Addresses: [Li, Hongjian; Li, Panpan; Kang, Junjie; Li, Zhi; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Wang, Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D Ctr, Beijing 100083, Peoples R China.

Reprint Address: Li, HJ (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: semi_lihongjian@126.com

ISSN: 1882-0778

Record 81 of 495

Title: Four-wavelength microdisk laser array laterally coupled with a bus waveguide

Author(s): Zou, LX (Zou, Ling-Xiu); Lv, XM (Lv, Xiao-Meng); Huang, YZ (Huang, Yong-Zhen); Long, H (Long, Heng); Yao, QF (Yao, Qi-Feng); Xiao, JL (Xiao, Jin-Long); Du, Y (Du, Yun)

Source: OPTICS LETTERS Volume: 38 Issue: 19 Pages: 3807-3810 DOI: 10.1364/OL.38.003807 Published: OCT 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A four-wavelength microdisk laser array laterally coupled with a bus waveguide is demonstrated numerically and experimentally. The coupled-mode characteristics as well as scattering loss in the bus waveguide caused by the connected microdisks are simulated by a 2D finite-difference time-domain technique. An AlGaInAs/InP microdisk laser array with circular radii of 10.1, 10.2, 10.3, and 10.4 mu m is designed and fabricated by common photolithography and an inductively coupled-plasma etching technique. Continuous-wave electrically injected operation is realized at room temperature with the lowest threshold current of 3 mA. Four-wavelength lasing operation is realized with wavelength intervals of 3-4 nm and side mode suppression ratios larger than 25 dB. Finally, the influences of heating effect and thermal cross talk on lasing mode wavelength tuning are investigated experimentally. (C) 2013 Optical Society of America

Addresses: [Zou, Ling-Xiu; Lv, Xiao-Meng; Huang, Yong-Zhen; Long, Heng; Yao, Qi-Feng; Xiao, Jin-Long; Du, Yun] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Huang, YZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: yzhuang@semi.ac.cn

ISSN: 0146-9592

Record 82 of 495

Title: Nonblocking 4x4 silicon electro-optic switch matrix with push-pull drive

Author(s): Xing, JJ (Xing, Jiejiang); Li, ZY (Li, Zhiyong); Zhou, PJ (Zhou, Peiji); Xiao, X (Xiao, Xi); Yu, JZ (Yu, Jinzhong); Yu, YD (Yu, Yude)

Source: OPTICS LETTERS Volume: 38 Issue: 19 Pages: 3926-3929 DOI: 10.1364/OL.38.003926 Published: OCT 1 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: A compact rearrangeable nonblocking 4 x 4 silicon electro-optic switch matrix based on a Spanke-Benes network is proposed and fabricated by a 0.18 mu m standard commercial complementary metal-oxide semiconductor line. By respectively modulating the two modulation arms with a push-pull drive, a cross talk (CT) of less than -18 dB is obtained for the switching element with 150-mu m-long modulation arms. The total steady-state power consumption of the switch matrix ranges from 4.46 to 35.92 mW for different routing states. The CT values of the routing state with the minimum and maximum power consumptions are less than -19 dB and less than -12 dB, respectively. (C) 2013 Optical Society of America

Addresses: [Xing, Jiejiang; Li, Zhiyong; Zhou, Peiji; Xiao, Xi; Yu, Jinzhong; Yu, Yude] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Yu, YD (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yudeyu@semi.ac.cn

ISSN: 0146-9592

Record 83 of 495

Title: Enhanced optical absorption in nanohole-textured silicon thin-film solar cells with rear-located metal particles

Author(s): Chen, YK (Chen, Yankun); Han, WH (Han, Weihua); Yang, FH (Yang, Fuhua)

Source: OPTICS LETTERS Volume: 38 Issue: 19 Pages: 3973-3975 DOI: 10.1364/OL.38.003973 Published: OCT 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We report the computational modeling of Ag nanoparticles deposited on the rear of a nanohole-textured silicon thin film to achieve higher absorption for silicon solar cells. The silicon nanoholes and the rear-located Ag nanoparticles can enhance the absorption in the silicon thin film. The short circuit current density for nanohole-textured silicon thin film can be further improved by about 11.6% by Ag nanoparticles. The combination of silicon nanoholes and plasmonic metal nanoparticles provides a promising way to enhance the absorption of silicon thin-film solar cells. (C) 2013 Optical Society of America

Addresses: [Chen, Yankun; Han, Weihua; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

Reprint Address: Han, WH (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

E-mail Addresses: weihua@semi.ac.cn

ISSN: 0146-9592

Record 84 of 495

Title: AlGaN/GaN Schottky Diode Fabricated by Au Free Process

Author(s): Jia, LF (Jia, Lifang); Yan, W (Yan, Wei); Fan, ZC (Fan, Zhongchao); He, Z (He, Zhi); Wang, XD (Wang, Xiaodong); Wang, GH (Wang, Guohong); Yang, FH (Yang, Fuhua)

Source: IEEE ELECTRON DEVICE LETTERS Volume: 34 Issue: 10 Pages: 1235-1237 DOI: 10.1109/LED.2013.2278337 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: An AlGaN/GaN Schottky diode is fabricated using an Au free process. Both ohmic and Schottky contact are studied. The ohmic contact results show low contact resistance and good surface morphology. The specific resistance (rho(c)) and contact resistance (R-c) of the ohmic contact are similar to 3.5x10(-5) Omega x cm(2) and 2.1 Omega . mm, respectively. Several current transport mechanisms are employed to analyze the measured I-V curves of the diode. The data have demonstrated that at a lower forward bias the combination of generation recombination and tunneling current mechanisms are dominant, whereas the thermionic emission mechanism becomes more significant at a higher forward bias. The effective Schottky barrier height is estimated to be 0.99 eV. The breakdown voltage of AlGaN/GaN Schottky diode is similar to 125 V.

Addresses: [Jia, Lifang; Yan, Wei; Fan, Zhongchao; He, Zhi; Wang, Xiaodong; Wang, Guohong; Yang, Fuhua] Chinese Acad Sci, Engn Res Ctr Semicond Integrat Technol, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Jia, LF (reprint author), Chinese Acad Sci, Engn Res Ctr Semicond Integrat Technol, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: hezhi@semi.ac.cn

ISSN: 0741-3106

Record 85 of 495

Title: Photonic Generation of Ultrawideband Signals With Large Carrier Frequency Tunability Based on an Optical Carrier Phase-Shifting Method

Author(s): Li, W (Li, Wei); Wang, LX (Wang, Li Xian); Zheng, JY (Zheng, Jian Yu); Li, M (Li, Ming); Zhu, NH (Zhu, Ning Hua)

Source: IEEE PHOTONICS JOURNAL Volume: 5 Issue: 5 Article Number: 5502007 DOI: 10.1109/JPHOT.2013.2284260 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We theoretically and experimentally demonstrated a novel photonic approach to generating ultrawideband (UWB) pulses with large carrier frequency tunability based on an optical carrier phase-shifting technique by cascading polarization modulators (PolMs) and a polarizer. The UWB pulses are generated by truncating a continuous wave (CW) RF signal into a pulsed signal in a photodetector (PD). The experimental results show that the base-band frequency components and the strong residual local oscillator (LO) signal are well suppressed. In addition, the generated UWB signals satisfy the Federal Communications Commission (FCC) spectral mask very well.

Addresses: [Li, Wei; Wang, Li Xian; Zheng, Jian Yu; Li, Ming; Zhu, Ning Hua] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Zhu, NH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: nhzhu@semi.ac.cn

ISSN: 1943-0655

Record 86 of 495

Title: Enhanced 1524-nm Emission From Ge Quantum Dots in a Modified Photonic Crystal L3 Cavity

Author(s): Zhang, Y (Zhang, Yong); Zeng, C (Zeng, Cheng); Li, DP (Li, Danping); Huang, ZZ (Huang, Zengzhi); Li, KZ (Li, Kezheng); Yu, JZ (Yu, Jinzhong); Li, JT (Li, Juntao); Xu, XJ (Xu, Xuejun); Maruizumi, T (Maruizumi, Takuya); Xia, JS (Xia, Jinsong)

Source: IEEE PHOTONICS JOURNAL Volume: 5 Issue: 5 Article Number: 4500607 DOI: 10.1109/JPHOT.2013.2280525 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Light emitters based on Ge quantum dots embedded in modified photonic crystal three defect-long (L3) cavities are fabricated and characterized. Several sharp resonant luminescence peaks dominate the photoluminescence (PL) spectrum at room temperature. The strongest resonant luminescence peak is obtained at 1524 nm. The enhancement factor is 110, and the corresponding Purcell factor is estimated to be 6.7. The large enhancement is due to high Purcell factor and high collection efficiency of modified L3 cavity verified by far-field patterns. The intrinsic Q factor measured from crossed-polarized resonant scattering is much higher than the Q factor measured from PL, indicating that the Q factors measured from PL are inaccurate due to free-carrier absorption of the photogenerated carriers.

Addresses: [Zhang, Yong; Zeng, Cheng; Li, Danping; Huang, Zengzhi; Yu, Jinzhong; Xia, Jinsong] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China.

[Li, Kezheng; Li, Juntao] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China.

[Yu, Jinzhong] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

[Xu, Xuejun; Maruizumi, Takuya] Tokyo City Univ, Adv Res Labs, Res Ctr Silicon Nanosci, Tokyo 1580082, Japan.

Reprint Address: Xia, JS (reprint author), Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China.

E-mail Addresses: jinsongxia@gmail.com

ISSN: 1943-0655
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Record 87 of 495

Title: Monolithic Integrated Silicon Photonic Interconnect With Perfectly Vertical Coupling Optical Interface

Author(s): Zhang, ZY (Zhang, Zanyun); Huang, BJ (Huang, Beiju); Zhang, Z (Zhang, Zan); Cheng, CT (Cheng, Chuantong); Chen, HD (Chen, Hongda)

Source: IEEE PHOTONICS JOURNAL Volume: 5 Issue: 5 Article Number: 6601711 DOI: 10.1109/JPHOT.2013.2281978 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We proposed and demonstrated a point-to-point photonic interconnect based on a perfectly vertical grating coupler. This bidirectional grating plays double roles of coupling and splitting at the optical input. Based on such a configuration, an electrooptical (E-O) modulator and photonic interconnect were demonstrated. To characterize the photonic interconnect, both the E-O modulator and germanium waveguide photodetector were measured. Finally, an eye diagram test was carried out to study the dynamic performance of the photonic link. The results show that the maximum operation speed is 4 Gb/s.

Addresses: [Zhang, Zanyun; Huang, Beiju; Zhang, Zan; Cheng, Chuantong; Chen, Hongda] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Huang, BJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: bjhuang@semi.ac.cn

ISSN: 1943-0655

Record 88 of 495

Title: Single Phase Modulator for Binary Phase-Coded Microwave Signals Generation

Author(s): Li, W (Li, Wei); Wang, LX (Wang, Li Xian); Li, M (Li, Ming); Zhu, NH (Zhu, Ning Hua)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 19 Pages: 1867-1870 DOI: 10.1109/LPT.2013.2278277 Published: OCT 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We report a new approach to photonic generation of binary phase-coded microwave signals based on the asymmetric phase modulation indexes of a phase modulator in the TE and TM polarization states. The proposed system is extremely simplified compared with any other techniques reported in the previous literature since we only use one phase modulator. The microwave carrier frequency is widely tunable, and the p phase shift of the microwave signal is independent of the amplitude of the electrical driving signal. The proposed technique is theoretically analyzed and experimentally verified at carrier frequencies of 10 and 25 GHz, respectively.

Addresses: [Li, Wei; Wang, Li Xian; Li, Ming; Zhu, Ning Hua] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.