Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Source: AIP ADVANCES Volume: 3 Issue: 9 Article Number: 092124 DOI: 10.1063/1.4823478 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The InGaN multiple quantum well light-emitting diodes (LEDs) with different sizes of indium-tin-oxide (ITO) nanobowl photonic crystal (PhC) structure has been fabricated using self-assembled monolayer nanosphere lithography. The light output power (LOP) of PhC LEDs (at 350 mA) has been enhanced by 63.5% and the emission divergence exhibits a 28.8 degrees reduction compared to conventional LEDs without PhC structure. Current-Voltage curves have shown that these PhC structures on ITO layer will not degrade the LED electrical properties. The finite-difference time-domain simulation (FDTD) has also been performed for light extraction and emission characteristics, which is consistent with the experimental results. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Addresses: [Wu, Kui; Zhang, Yiyun; Wei, Tongbo; Sun, Bo; Zheng, Haiyang; Lu, Hongxi; Chen, Yu; Wang, Junxi; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

[Wu, Kui; Luo, Yi] Tsinghua Univ, Tsinghua Natl Lab Informat Sci & Technol, State Key Lab Integrated Optoelect, Dept Elect Engn, Beijing 100084, Peoples R China.

[Lan, Ding] Chinese Acad Sci, Inst Mech, Natl Micrograv Lab, Beijing 100080, Peoples R China.

Reprint Address: Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: tbwei@semi.ac.cn

ISSN: 2158-3226

Record 114 of 495

Title: A grating-coupled external cavity InAs/InP quantum dot laser with 85-nm tuning range

Author(s): Wei, H (Wei Heng); Jin, P (Jin Peng); Luo, S (Luo Shuai); Ji, HM (Ji Hai-Ming); Yang, T (Yang Tao); Li, XK (Li Xin-Kun); Wu, J (Wu Jian); An, Q (An Qi); Wu, YH (Wu Yan-Hua); Chen, HM (Chen Hong-Mei); Wang, FF (Wang Fei-Fei); Wu, J (Wu Ju); Wang, ZG (Wang Zhan-Guo)

Source: CHINESE PHYSICS B Volume: 22 Issue: 9 Article Number: 094211 DOI: 10.1088/1674-1056/22/9/094211 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The optical performance of a grating-coupled external cavity laser based on InAs/InP quantum dots is investigated. Continuous tuning from 1391 nm to 1468 nm is realized at an injection current of 1900 mA. With the injection current increasing to 2300 mA, the tuning is blue shifted to some extent to the range from 1383 nm to 1461 nm. By combining the effect of the injection current with the grating tuning, the total tuning bandwidth of the external cavity quantum-dot laser can reach up to 85 nm. The dependence of the threshold current on the tuning wavelength is also presented.

Addresses: [Jin Peng] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Jin, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: pengjin@semi.ac.cn

ISSN: 1674-1056
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Record 115 of 495

Title: High power 2-mu m room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers

Author(s): Xu, Y (Xu Yun); Wang, YB (Wang Yong-Bin); Zhang, Y (Zhang Yu); Song, GF (Song Guo-Feng); Chen, LH (Chen Liang-Hui)

Source: CHINESE PHYSICS B Volume: 22 Issue: 9 Article Number: 094208 DOI: 10.1088/1674-1056/22/9/094208 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A high power GaSb-based laser diode with lasing wavelength at 2 mu m was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm(2) (72 A/cm(2) per quantum well), and the slope efficiency was 0.2 W/A. The internal loss was 11 cm(-1) and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.

Addresses: [Xu Yun; Wang Yong-Bin; Zhang Yu; Song Guo-Feng; Chen Liang-Hui] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Song, GF (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: sgf@semi.ac.cn

ISSN: 1674-1056

Record 116 of 495

Title: Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

Author(s): Yang, J (Yang Jing); Zhao, DG (Zhao De-Gang); Jiang, DS (Jiang De-Sheng); Liu, ZS (Liu Zong-Shun); Chen, P (Chen Ping); Li, L (Li Liang); Wu, LL (Wu Liang-Liang); Le, LC (Le Ling-Cong); Li, XJ (Li Xiao-Jing); He, XG (He Xiao-Guang); Wang, H (Wang Hui); Zhu, JJ (Zhu Jian-Jun); Zhang, SM (Zhang Shu-Ming); Zhang, BS (Zhang Bao-Shun); Yang, H (Yang Hui)

Source: CHINESE PHYSICS B Volume: 22 Issue: 9 Article Number: 098801 DOI: 10.1088/1674-1056/22/9/098801 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The effects of Mg-induced net acceptor doping concentration and carrier lifetime on the performance of a p-i-n InGaN solar cell are investigated. It is found that the electric field induced by spontaneous and piezoelectric polarization in the i-region could be totally shielded when the Mg-induced net acceptor doping concentration is sufficiently high. The polarization-induced potential barriers are reduced and the short circuit current density is remarkably increased from 0.21 mA/cm(2) to 0.95 mA/cm(2) by elevating the Mg doping concentration. The carrier lifetime determined by defect density of i-InGaN also plays an important role in determining the photovoltaic properties of solar cell. The short circuit current density severely degrades, and the performance of InGaN solar cell becomes more sensitive to the polarization when carrier lifetime is lower than the transit time. This study demonstrates that the crystal quality of InGaN absorption layer is one of the most important challenges in realizing high efficiency InGaN solar cells.

Addresses: [Yang Jing; Zhao De-Gang; Jiang De-Sheng; Liu Zong-Shun; Chen Ping; Li Liang; Wu Liang-Liang; Le Ling-Cong; Li Xiao-Jing; He Xiao-Guang; Yang Hui] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Wang Hui; Zhu Jian-Jun; Zhang Shu-Ming; Zhang Bao-Shun; Yang Hui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

Reprint Address: Zhao, DG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: dgzhao@red.semi.ac.cn

ISSN: 1674-1056
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Record 117 of 495

Title: High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

Author(s): Zheng, L (Zheng Liu); Zhang, F (Zhang Feng); Liu, SB (Liu Sheng-Bei); Dong, L (Dong Lin); Liu, XF (Liu Xing-Fang); Fan, ZC (Fan Zhong-Chao); Liu, B (Liu Bin); Yan, GG (Yan Guo-Guo); Wang, L (Wang Lei); Zhao, WS (Zhao Wan-Shun); Sun, GS (Sun Guo-Sheng); He, Z (He Zhi); Yang, FH (Yang Fu-Hua)

Source: CHINESE PHYSICS B Volume: 22 Issue: 9 Article Number: 097302 DOI: 10.1088/1674-1056/22/9/097302 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: 4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 m Omega.cm(2) with a total active area of 2.46 x 10(-3) cm(2). Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250 degrees C in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9 x 10(-5) A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.

Addresses: [Zheng Liu; Zhang Feng; Liu Sheng-Bei; Dong Lin; Liu Xing-Fang; Liu Bin; Yan Guo-Guo; Wang Lei; Zhao Wan-Shun; Sun Guo-Sheng; He Zhi] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Fan Zhong-Chao; Yang Fu-Hua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

Reprint Address: Zhang, F (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: fzhang@semi.ac.cn

ISSN: 1674-1056
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Record 118 of 495

Title: Cavity-mode calculation of L3 photonic crystal slab using the effective index perturbation method

Author(s): Zhang, SZ (Zhang, Shizhu); Zhou, WF (Zhou, Wenfei); Ye, XL (Ye, Xiaoling); Xu, B (Xu, Bo); Wang, ZG (Wang, Zhanguo)

Source: OPTICAL REVIEW Volume: 20 Issue: 5 Pages: 420-425 DOI: 10.1007/s10043-013-0072-8 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: This paper mainly describes that the effective index perturbation (EIP) technique in combination with two-dimensional (2D)/three-dimensional (3D) PWE methods predicts resonant mode frequencies and mode patterns for the L3 photonic crystal slab cavity, which substantially reduces the computation time and computer memory without losing accuracy. The simulation results show that when the perturbed effective index by matching dielectric band edge is used, the fundamental resonant mode has small calculation frequency error; however, when the effective index obtained by the standard effective index method (EIM) is used, it is appropriate for predicting higher-order resonant modes, and the micro-photoluminescence experiments verify the predictions of the theoretical model. In addition, mode profiles of the L3 cavity with both the displacement of the end-holes and the base cavity structure can also be accurately predicted. (C) 2013 The Japan Society of Applied Physics

Addresses: [Zhang, Shizhu; Zhou, Wenfei; Ye, Xiaoling; Xu, Bo; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Zhang, SZ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: shizhuz@semi.ac.cn

ISSN: 1340-6000

Record 119 of 495

Title: Structural characterization and magnetic properties of perpendicularly magnetized MnAl films grown by molecular-beam epitaxy

Author(s): Nie, SH (Nie Shuai-Hua); Zhu, LJ (Zhu Li-Jun); Pan, D (Pan Dong); Lu, J (Lu Jun); Zhao, JH (Zhao Jian-Hua)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 17 Article Number: 178103 DOI: 10.7498/aps.62.178103 Published: SEP 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Perpendicularly magnetized MnAlx thin films with different Al contents have been epitaxied on GaAs (001) substrates by a molecular-beam epitaxy system. Crystalline quality of MnAlx films is closely related to Al content, and magnetic properties of MnAlx films are improved as crystalline quality of MnAlx fims increases. MnAl0.9 film shows the best crystalline quality and magnetic property among all samples. So we grew MnAl0.9 films at different growth temperatures to further optimize growth conditions. With increasing temperature, the chemical order parameter increases and the full width at half maximum of the tau (002) peak decreases, which reveal the improvement of crystalline quality. Higher perpendicular magnetization, coercivity and magnetic anisotropy are found as growth temperature increases. The best crystalline quality and perpendicularly magnetized properties are found at 350 degrees C; the coercivity of 8.3 kOe, saturation magnetization of 265 emu/cm(3), M-r/M-s of 0.933 and perpendicular magnetic anisotropy constant of 7.74 Merg/cm(3) are achieved. These tunable perpendicularly magnetized properties and good compatibility associated with semiconductor materials make the noble-metal-free and rare-earth-free MnAl films attractive in the application of spintronic devices.

Addresses: [Nie Shuai-Hua; Zhu Li-Jun; Pan Dong; Lu Jun; Zhao Jian-Hua] Chinese Acad Sci, Inst Semicond, Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Zhao, JH (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: jhzhao@red.semi.ac.cn

ISSN: 1000-3290

Record 120 of 495

Title: The progress of silicon-based grating couplers

Author(s): Yang, BA (Yang Biao); Li, ZY (Li Zhi-Yong); Xiao, X (Xiao Xi); Anastasia, N (Anastasia, Nemkova); Yu, JZ (Yu Jin-Zhong); Yu, YD (Yu Yu-De)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 18 Article Number: 184214 DOI: 10.7498/aps.62.184214 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Silicon-based photonic integrated chips recently have attracted great attention and actively intervened in many applications such as optical communications, optical interconnects, and optical sensing for relevant research institutions. Photonic integrated circuits are the key block to build information infrastructures. Among of them, grating couplers play an important role in silicon photonics, due to high efficient optical coupling on/off photonic chips. Also, they have many advantages in high density photonic packaging and on-wafer testing, such as large alignment tolerances and no requirements for wafer scribing or chip polishing. This review focuses on the principles and performances of grating couplers on silicon-on-insulator substrates. In this article, we also discuss the state-of-art and the trends in the near future, with a summary of our achievements over the last few years.

Addresses: [Yang Biao; Li Zhi-Yong; Xiao Xi; Anastasia, Nemkova; Yu Jin-Zhong; Yu Yu-De] Chinese Acad Sci, Inst Semicond, Natl Key Lab Optoelect Integrat, Beijing 100083, Peoples R China.

Reprint Address: Yu, YD (reprint author), Chinese Acad Sci, Inst Semicond, Natl Key Lab Optoelect Integrat, Beijing 100083, Peoples R China.

E-mail Addresses: yudeyu@semi.ac.cn

ISSN: 1000-3290

Record 121 of 495

Title: Detection of rail corrugation based on fiber laser accelerometers

Author(s): Huang, WZ (Huang, Wenzhu); Zhang, WT (Zhang, Wentao); Du, YL (Du, Yanliang); Sun, BC (Sun, Baochen); Ma, HX (Ma, Huaixiang); Li, F (Li, Fang)

Source: MEASUREMENT SCIENCE & TECHNOLOGY Volume: 24 Issue: 9 Article Number: 094014 DOI: 10.1088/0957-0233/24/9/094014 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Efficient inspection methods are necessary for detection of rail corrugation to improve the safety and ride quality of railway operations. This paper presents a novel fiber optic technology for detection of rail corrugation based on fiber laser accelerometers (FLAs), tailored to the measurement of surface damage on rail structures. The principle of detection of rail corrugation using double integration of axle-box acceleration is presented. Then we present the theoretical model and test results of FLAs which are installed on the bogie to detect the vertical axle-box acceleration of the train. Characteristics of high sensitivity and large dynamic range are achieved when using fiber optic interferometric demodulation. A flexible inertial algorithm based on double integration and the wavelet denoising method is proposed to accurately estimate the rail corrugation. A field test is carried out on the Datong-Qinhuangdao Railway in north China. The test results are compared with the results of a rail inspection car, which shows that the fiber laser sensing system has a good performance in monitoring rail corrugation.

Addresses: [Huang, Wenzhu; Zhang, Wentao; Li, Fang] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

[Huang, Wenzhu; Ma, Huaixiang] Shijiazhuang Tiedao Univ, Sch Mech Engn, Shijiazhuang 050043, Peoples R China.

[Du, Yanliang; Sun, Baochen] Shijiazhuang Tiedao Univ, Key Lab Struct Hlth Monitoring & Control Hebei Pr, Shijiazhuang 050043, Peoples R China.

Reprint Address: Huang, WZ (reprint author), Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

E-mail Addresses: zhangwt@semi.ac.cn

ISSN: 0957-0233

Record 122 of 495

Title: Characterization of Obtuse Triangular Defects on 4H-SiC 4 degrees off-Axis Epitaxial Wafers

Author(s): Dong, L (Dong Lin); Sun, GS (Sun Guo-Sheng); Yu, J (Yu Jun); Zheng, L (Zheng Liu); Liu, XF (Liu Xing-Fang); Zhang, F (Zhang Feng); Yan, GG (Yan Guo-Guo); Li, XG (Li Xi-Guang); Wang, ZG (Wang Zhan-Guo); Yang, F (Yang Fei)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 9 Article Number: 096105 DOI: 10.1088/0256-307X/30/9/096105 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We investigate the triangular defects with different structural features on 4H-SiC epilayers by a Nomarski microscope, a Candela optical surface analyzer and ultraviolet photoluminescence (UV-PL) imaging. Both the foreign particles and the substrate scratches can cause the formation of the obtuse triangular defects. The central area of some obtuse triangular defects can have the spatially confined core, in which the in-grown stacking faults can be observed under the UV-PL imaging. In contrast, the obtuse triangular defects induced by the scratches appear in the form of band-like defects, of which the width depends on the scratch direction and reaches the maximum when the scratch direction is parallel to the step flow direction. The formation mechanisms of these obtuse triangular defects are discussed.

Addresses: [Dong Lin; Sun Guo-Sheng; Zheng Liu; Liu Xing-Fang; Zhang Feng; Yan Guo-Guo; Wang Zhan-Guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Sun Guo-Sheng; Yu Jun; Li Xi-Guang] Dongguan Tianyu Semicond Inc, Dongguan 523000, South Korea.

[Yang Fei] State Grid Smart Grid Res Inst, Beijing 100192, Peoples R China.

Reprint Address: Dong, L (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: donglin09@semi.ac.cn

ISSN: 0256-307X

Record 123 of 495

Title: Strain Distributions in Non-Polar a-Plane InxGa1-xN Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction

Author(s): Zhao, GJ (Zhao Gui-Juan); Yang, SY (Yang Shao-Yan); Liu, GP (Liu Gui-Peng); Liu, CB (Liu Chang-Bo); Sang, L (Sang Ling); Gu, CY (Gu Cheng-Yan); Liu, XL (Liu Xiang-Lin); Wei, HY (Wei Hong-Yuan); Zhu, QS (Zhu Qin-Sheng); Wang, ZG (Wang Zhan-Guo)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 9 Article Number: 098102 DOI: 10.1088/0256-307X/30/9/098102 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: By using x-ray diffraction analysis, we investigate the major structural parameters such as strain state and crystal quality of non-polar a-plane InxGa1-xN thin films grown on r-sapphire substrates by metalorganic chemical vapour deposition. The results of the inplane grazing incidence diffraction technique are analyzed and compared with a complementary out-of-plane high resolution x-ray diffraction technique. When the indium composition is low, the a-plane InxGa1-xN layer is tensile strain in the growth direction (a-axis) and compressive strain in the two in-plane directions (m-axis and c-axis). The strain status becomes contrary when the indium composition is high. The stress in the m-axis direction sigma(yy) is larger than that in the c-axis direction sigma(zz). Furthermore, strain in the two in-plane directions decrease and the crystal quality becomes better with the growing of the InxGa1-xN film.

Addresses: [Zhao Gui-Juan] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Zhao, GJ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: gjzhao@semi.ac.cn; sh-yyang@red.semi.ac.cn

ISSN: 0256-307X
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Record 124 of 495

Title: Determination of the Interface States in Amorphous/Crystalline Silicon Using Surface Photovoltage Spectroscopy

Author(s): Li, H (Li, Hao); Zeng, XB (Zeng, Xiangbo); Yang, P (Yang, Ping); Zhang, XD (Zhang, Xiaodong); Xie, XB (Xie, Xiaobing); Li, JY (Li, Jingyan); Wang, QM (Wang, Qiming)

Source: IEEE ELECTRON DEVICE LETTERS Volume: 34 Issue: 9 Pages: 1079-1081 DOI: 10.1109/LED.2013.2273171 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The interface state level at amorphous/crystalline silicon (a-Si:H/c-Si) heterojunctions is identified with surface photovoltage spectroscopy (SPS). A positive slope alteration of SPS in 1.2 eV indicates there is a primarily empty state at Ev(c-Si) + 0.75 eV. Using hydrogen plasma treatment (HPT) on c-Si surface, we observed a systematic variation in the SPS signal upon HPT time, which was associated to the change of interface state density. Our results show that the SPS can be used to optimize the heterojunction with intrinsic thin-layer solar cell preparation process.

Addresses: [Li, Hao; Zeng, Xiangbo; Yang, Ping; Zhang, Xiaodong; Xie, Xiaobing; Li, Jingyan; Wang, Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Li, H (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: xbzeng@semi.ac.cn

ISSN: 0741-3106

Record 125 of 495

Title: A wafer-level Sn-rich Au-Sn intermediate bonding technique with high strength