Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Reprint Address: Li, W (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: liwei05@semi.ac.cn; lxwang@semi.ac.cn; ml@semi.ac.cn; nhzhu@semi.ac.cn

ISSN: 1041-1135

Record 89 of 495

Title: Photonic MMW-UWB Signal Generation via DPMZM-Based Frequency Up-Conversion

Author(s): Li, W (Li, Wei); Wang, LX (Wang, Li Xian); Zheng, JY (Zheng, Jian Yu); Li, M (Li, Ming); Zhu, NH (Zhu, Ning Hua)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 19 Pages: 1875-1878 DOI: 10.1109/LPT.2013.2278867 Published: OCT 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We propose a photonic technique for millimeter-wave ultra-wideband (MMW-UWB) signal generation via direct frequency up-conversion using a dual-parallel Mach-Zehnder modulator (DPMZM). By properly setting the dc bias voltages of the DPMZM, the baseband UWB pulse is up-converted to the MMW band without pulse distortion. In addition, the excessive residual local oscillator component is perfectly suppressed. The electrical spectrum of the up-converted UWB signal satisfies the Federal Communications Commission spectral mask very well.

Addresses: [Li, Wei; Wang, Li Xian; Zheng, Jian Yu; Li, Ming; Zhu, Ning Hua] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Li, W (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: liwei05@semi.ac.cn; lxwang@semi.ac.cn; jyzheng@semi.ac.cn; ml@semi.ac.cn; nhzhu@semi.ac.cn

ISSN: 1041-1135

Record 90 of 495

Title: Number-resolved master equation approach to quantum transport under the self-consistent Born approximation

Author(s): Liu, Y (Liu Yu); Jin, JS (Jin JinShuang); Li, J (Li Jun); Li, XQ (Li XinQi); Yan, YJ (Yan YiJing)

Source: SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY Volume: 56 Issue: 10 Pages: 1866-1873 DOI: 10.1007/s11433-013-5238-7 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We construct a particle-number (n)-resolved master equation (ME) approach under the self-consistent Born approximation (SCBA) for quantum transport through mesoscopic systems. The formulation is essentially non-Markovian and incorporates the interplay of the multi-tunneling processes and many-body correlations. The proposed n-SCBA-ME goes beyond the scope of the Born-Markov master equation, being applicable to transport under small bias voltage, in non-Markovian regime and with strong Coulomb correlations. For steady state, it can recover not only the exact result of noninteracting transport under arbitrary voltages, but also the challenging nonequilibrium Kondo effect. Moreover, the n-SCBA-ME approach is efficient for the study of shot noise. We demonstrate the application by a couple of representative examples, including particularly the nonequilibrium Kondo system.

Addresses: [Liu Yu; Li XinQi] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Jin JinShuang] Hangzhou Normal Univ, Dept Phys, Hangzhou 310036, Zhejiang, Peoples R China.

[Li Jun] Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China.

[Li XinQi] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China.

[Yan YiJing] Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China.

Reprint Address: Jin, JS (reprint author), Hangzhou Normal Univ, Dept Phys, Hangzhou 310036, Zhejiang, Peoples R China.

E-mail Addresses: jsjin@hznu.edu.cn; lixinqi@bnu.edu.cn

ISSN: 1674-7348

Record 91 of 495

Title: Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

Author(s): Wu, LL (Wu, L. L.); Zhao, DG (Zhao, D. G.); Jiang, DS (Jiang, D. S.); Chen, P (Chen, P.); Le, LC (Le, L. C.); Li, L (Li, L.); Liu, ZS (Liu, Z. S.); Zhang, SM (Zhang, S. M.); Zhu, JJ (Zhu, J. J.); Wang, H (Wang, H.); Zhang, BS (Zhang, B. S.); Yang, H (Yang, H.)

Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 28 Issue: 10 Article Number: 105020 DOI: 10.1088/0268-1242/28/10/105020 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 degrees C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 degrees C exhibits the best ohmic contact properties with respect to the specific contact resistivity (rho(c)). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer.

Addresses: [Wu, L. L.; Zhao, D. G.; Jiang, D. S.; Chen, P.; Le, L. C.; Li, L.; Liu, Z. S.] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Zhang, S. M.; Zhu, J. J.; Wang, H.; Zhang, B. S.; Yang, H.] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China.

Reprint Address: Wu, LL (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: dgzhao@red.semi.ac.cn

ISSN: 0268-1242
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Record 92 of 495

Title: Doping and electrical properties of cubic boron nitride thin films: A critical review

Author(s): Zhang, XW (Zhang, X. W.)

Source: THIN SOLID FILMS Volume: 544 Pages: 2-12 DOI: 10.1016/j.tsf.2013.07.001 Published: OCT 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Cubic boron nitride (c-BN) is a promising material for high-power and high-temperature electronic devices operating in harsh environments due to its outstanding properties including a wide band-gap, good chemical stability, high thermal conductivity, and high breakdown field. The electronic applications of c-BN have received considerable attention, benefiting from the progress in c-BN thin film deposition techniques during the last few years. The present article reviews the latest developments in doping and electrical properties of c-BN thin films. Following a brief introduction on film growth, we present calculated theoretical results on electronic structure as well as the energies of native defects and impurity dopants in c-BN. In recent experimental research, several dopants, including Be, Mg, Zn, S, and Si, have been incorporated into c-BN thin films during deposition or by post ion implantation, resulting in both n- and p-type conduction. These results are summarized and discussed in Section 3. In addition, results on c-BN/metal-contacts and p-n junctions based on intrinsic or doped c-BN thin films are discussed in Section 4. Finally, current status and future prospects for doping and electrical properties of c-BN thin films are discussed. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Zhang, XW (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: xwzhang@semi.ac.cn

ISSN: 0040-6090

Record 93 of 495

Title: Structural, morphological and magnetic properties of AlGaN thin films co-implanted with Cr and Sm ions

Author(s): Gao, XG (Gao, Xingguo); Liu, C (Liu, Chao); Yin, CH (Yin, Chunhai); Sun, LL (Sun, Lili); Tao, DY (Tao, Dongyan); Yang, C (Yang, Cheng); Man, BY (Man, Baoyuan)

Source: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS Volume: 343 Pages: 65-68 DOI: 10.1016/j.jmmm.2013.04.072 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Cr and Sm co-implanted AlGaN (AlGaN:Cr:Sm) films have been fabricated by metal organic chemical vapor deposition, ion implantation and annealing. No secondary phase and metal-related peak can be detected within the detection limit of X-ray diffraction measurement. The Raman analysis demonstrated that the peak of E-2 (H) phonon mode of sample B is much more narrow and sharp than that of sample A. The atomic force microscopy measurements indicated that the root mean square roughness for sample A and sample B were 2.26 and 1.07 nm, respectively. According to superconducting quantum interference device analysis, the AlGaN:Cr:Sm films exhibit room-temperature ferromagnetism and colossal magnetic moment effect. Moreover, the saturation magnetization of sample B is 9.75 mu(B)/atom, which is much higher than that of sample A (1.86 mu(B)/atom). Finally, the possible origin of the room-temperature ferromagnetism in AlGaN:Cr:Sm films was discussed. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Gao, Xingguo] Shandong Polytech Univ, Sch Sci, Jinan 250353, Peoples R China.

[Gao, Xingguo; Yang, Cheng; Man, Baoyuan] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China.

[Liu, Chao; Yin, Chunhai; Sun, Lili; Tao, Dongyan] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Liu, C (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: cliu@semi.ac.cn; byman@sdnu.edu.cn

ISSN: 0304-8853

Record 94 of 495

Title: Environmentally stable/self-powered ultraviolet photodetectors with high sensitivity

Author(s): Yang, SX (Yang, Shengxue); Tongay, S (Tongay, Sefaattin); Li, SS (Li, Shu-Shen); Xia, JB (Xia, Jian-Bai); Wu, JQ (Wu, Junqiao); Li, JB (Li, Jingbo)

Source: APPLIED PHYSICS LETTERS Volume: 103 Issue: 14 Article Number: 143503 DOI: 10.1063/1.4824204 Published: SEP 30 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Here, we demonstrate self-powered ultraviolet photodetectors that are capable of generating opposite current flow when illuminated at different wavelengths. The photodetectors are composed of n-ZnO/Polyaniline (PANI) p-n and PANI/ZnGa2O4 type-II heterojunctions and operate without any need for external power source. Devices display superior stability in ambient conditions within months. Results provide opportunities for developing devices for optical recognition. (C) 2013 AIP Publishing LLC.

Addresses: [Yang, Shengxue; Tongay, Sefaattin; Li, Shu-Shen; Xia, Jian-Bai; Wu, Junqiao; Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Tongay, Sefaattin; Wu, Junqiao] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA.

Reprint Address: Li, JB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jbli@semi.ac.cn

ISSN: 0003-6951
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Record 95 of 495

Title: A novel humidity sensor based on NH2-MIL-125(Ti) metal organic framework with high responsiveness

Author(s): Zhang, Y (Zhang, Ying); Chen, Y (Chen, Yu); Zhang, YP (Zhang, Yupeng); Cong, HH (Cong, Huahua); Fu, B (Fu, Bo); Wen, SP (Wen, Shanpeng); Ruan, SP (Ruan, Shengping)

Source: JOURNAL OF NANOPARTICLE RESEARCH Volume: 15 Issue: 10 Article Number: DOI: 10.1007/s11051-013-2014-6 Published: SEP 29 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A novel porous nanosized humidity-sensing material of amine-functionalized titanium metal organic framework (MOF), NH2-MIL-125(Ti), was investigated. NH2-MIL-125(Ti) nanoparticles with high phase purity and good physicochemical property were synthesized by a simple hydrothermal method. The nanosized MOF was characterized by X-ray diffraction and scanning electron microscope. The average size of the MOF nanoparticles is around 300 nm. Then NH2-MIL-125(Ti) humidity sensor was fabricated by coating the nanosized materials on interdigitated electrodes. The humidity sensor based on NH2-MIL-125(Ti) shows good linearity of RH (11-95 % RH), as well as fast response and recovery time. The RH detecting range is from 11 to 95 % RH at 100 Hz. The response and recovery time are about 45 and 50 s, respectively. Moreover, the sensing mechanism was discussed by complex impedance analysis in detail. These results indicate the potential application of NH2-MIL-125(Ti) in humidity sensors.

Addresses: [Zhang, Ying; Zhang, Yupeng; Cong, Huahua; Ruan, Shengping] Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China.

[Chen, Yu] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Fu, Bo; Wen, Shanpeng] Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples R China.

Reprint Address: Ruan, SP (reprint author), Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China.

E-mail Addresses: sp_wen@jlu.edu.cn; maheping609@gmail.com

ISSN: 1388-0764

Record 96 of 495

Title: Temperature dependence of electronic behaviors in n-type multiple-channel junctionless transistors

Author(s): Ma, LH (Ma, Liuhong); Han, WH (Han, Weihua); Wang, H (Wang, Hao); Li, XM (Li, Xiaoming); Yang, FH (Yang, Fuhua)

Source: JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 12 Article Number: 124507 DOI: 10.1063/1.4822318 Published: SEP 28 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The electronic behaviors in the n-type multiple-channel junctionless nanowire transistors are investigated in the thermal range from 10K to 300K. At low temperatures (T < 100K), oscillation current spikes are clearly observed below flatband voltage and attributed to resonant tunneling through donor-induced quantum dot array. There is a minimum value at the critical temperature of 15K for the drain currents and the electron mobility. The electron mobility increases rapidly above 15K because of the thermal activation of ionized electrons. The temperature-dependent background trapping at the interface of silicon and silicon dioxide is evaluated by an Arrhenius-type off-state current with the activation energy of approximately 49meV. As temperatures increasing, the negative shift of the threshold voltage with the slope of 4.0mV K-1 is given predominantly by the thermal activation of traps. (C) 2013 AIP Publishing LLC.

Addresses: [Ma, Liuhong; Han, Weihua; Wang, Hao; Li, Xiaoming; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China.

Reprint Address: Ma, LH (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrat Technol, Beijing 100083, Peoples R China.

E-mail Addresses: weihua@semi.ac.cn; fhyang@semi.ac.cn

ISSN: 0021-8979

Record 97 of 495

Title: Hydrogen storage by metalized silicene and silicane

Author(s): Wang, J (Wang, Jing); Li, JB (Li, Jingbo); Li, SS (Li, Shu-Shen); Liu, Y (Liu, Ying)

Source: JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 12 Article Number: 124309 DOI: 10.1063/1.4823738 Published: SEP 28 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The hydrogen storage capacities of K-decorated silicene and silicane are studied using first-principles calculations. It is found that K atoms can form a uniform and stable coverage on one side of silicene and both sides of silicane. Each K atom can absorb a maximum of five H-2 molecules and the hydrogen storage capacity of K-decorated silicane can reach 6.13wt. % with an average adsorption energy of 0.133 eV/H-2. This hydrogen storage capacity is in excess of 6wt. %, the U. S. Department of Energy target. This is a remarkable result indicating another application of silicene/silicane as a potential high-capacity storage medium. (C) 2013 AIP Publishing LLC.

Addresses: [Wang, Jing; Liu, Ying] Hebei Normal Univ, Dept Phys, Shijiazhuang 050024, Peoples R China.

[Wang, Jing; Liu, Ying] Hebei Normal Univ, Hebei Adv Thin Film Lab, Shijiazhuang 050024, Peoples R China.

[Li, Jingbo; Li, Shu-Shen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Wang, J (reprint author), Hebei Normal Univ, Dept Phys, Shijiazhuang 050024, Peoples R China.

E-mail Addresses: yliu@hebtu.edu.cn

ISSN: 0021-8979

Record 98 of 495

Title: Electron delocalization in gate-tunable gapless silicene

Author(s): Zhang, YY (Zhang, Yan-Yang); Tsai, WF (Tsai, Wei-Feng); Chang, K (Chang, Kai); An, XT (An, X. -T.); Zhang, GP (Zhang, G. -P.); Xie, XC (Xie, X. -C.); Li, SS (Li, Shu-Shen)

Source: PHYSICAL REVIEW B Volume: 88 Issue: 12 Article Number: 125431 DOI: 10.1103/PhysRevB.88.125431 Published: SEP 26 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The application of a perpendicular electric field can drive silicene into a gapless state, characterized by two nearly fully spin-polarized Dirac cones owing to both relatively large spin-orbital interactions and inversion symmetry breaking. Here we argue that since intervalley scattering from nonmagnetic impurities is highly suppressed by time-reversal symmetry, the physics should be effectively single-Dirac-cone like. Through numerical calculations, we demonstrate that there is no significant backscattering from a single impurity that is nonmagnetic and unit-cell uniform, indicating a stable delocalized state. This conjecture is then further confirmed from a scaling of conductance for disordered systems using the same type of impurities.

Addresses: [Zhang, Yan-Yang; Chang, Kai; An, X. -T.; Li, Shu-Shen] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

[Zhang, Yan-Yang; Xie, X. -C.] Peking Univ, ICQM, Beijing 100871, Peoples R China.

[Tsai, Wei-Feng] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan.

[Zhang, G. -P.] Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China.

Reprint Address: Tsai, WF (reprint author), Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan.

E-mail Addresses: wftsai@mail.nsysu.edu.tw

ISSN: 1098-0121
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Record 99 of 495

Title: Large enhancement of sub-band-gap light absorption of sulfur hyperdoped silicon by surface dome structures

Author(s): Wang, KF (Wang, Ke-Fan); Qu, SC (Qu, Shengchun); Liu, DW (Liu, Dewei); Liu, K (Liu, Kong); Wang, J (Wang, Jian); Zhao, L (Zhao, Li); Zhu, HL (Zhu, Hongliang); Wang, ZG (Wang, Zhanguo)

Source: MATERIALS LETTERS Volume: 107 Pages: 50-52 DOI: 10.1016/j.matlet.2013.05.123 Published: SEP 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Sulfur hyperdoped silicon was usually prepared by sulfur ion implantation and nanosecond laser annealing. It has a smooth surface and a low sub-band-gap absorption of 30%. Here we report that the surface of silicon wafer was chemically textured before it was treated by the above two processes, which greatly enhanced the light absorption of the hyperdoped silicon from 30% to 70% in sub-band-gap wavelength and from 65% to 80% in visible wavelength for the antireflection characteristics of the formed dome structures. Consequently, the surface texture process will be a necessary step for device development that is based on sulfur hyperdoped silicon materials. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Wang, Ke-Fan] Henan Univ, Inst Computat Mat Sci, Sch Phys & Elect, Kaifeng 475004, Peoples R China.

[Wang, Ke-Fan; Qu, Shengchun; Liu, Kong; Zhu, Hongliang; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Liu, Dewei] Zhengzhou Univ Light Ind, Dept Technol & Phys, Zhengzhou 450002, Peoples R China.

[Wang, Jian; Zhao, Li] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China.

Reprint Address: Wang, KF (reprint author), Henan Univ, Inst Computat Mat Sci, Sch Phys & Elect, Kaifeng 475004, Peoples R China.

E-mail Addresses: kfwang@henu.edu.cn

ISSN: 0167-577X
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Record 100 of 495

Title: First-principles study of electronic and magnetic properties of FeCl3-based graphite intercalation compounds

Author(s): Li, Y (Li, Yan); Yue, Q (Yue, Qu)

Source: PHYSICA B-CONDENSED MATTER Volume: 425 Pages: 72-77 DOI: 10.1016/j.physb.2013.05.030 Published: SEP 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The structural, electronic and magnetic properties of stage-1 and -2 FeCl3-based graphite intercalation compounds (GICs) are studied in the framework of the GGA+U implementation of density functional theory. The intercalation process extends the c-axis remarkably and modulates the band structure of graphite to p-type doped. A linearly dispersing band structure is observed for stage-1 GIC. The carrier density shows a weak descending tendency from stage-1 GIC to stage-2 GIC. The dependence of the energy level positions of Fe 3d orbitals on parameter U is strong. With the increase of U, the spin-up states move to the deeper energy levels, while the spin-down states move to the shallower energy levels. Stage-1 GIC has antiferromagnetic (AFM) order and stage-2 GICs has ferromagnetic (FM) orders at the ground states, and two combinative effects are proposed to explain the origin of the magnetic transformation from stage-1 GIC to stage-2 GIC. (c) 2013 Elsevier B.V. All rights reserved.

Addresses: [Li, Yan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Yue, Qu] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China.

Reprint Address: Li, Y (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: bclly2008@semi.ac.cn

ISSN: 0921-4526
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Record 101 of 495

Title: Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

Author(s): Tongay, S (Tongay, Sefaattin); Suh, J (Suh, Joonki); Ataca, C (Ataca, Can); Fan, W (Fan, Wen); Luce, A (Luce, Alexander); Kang, JS (Kang, Jeong Seuk); Liu, J (Liu, Jonathan); Ko, C (Ko, Changhyun); Raghunathanan, R (Raghunathanan, Rajamani); Zhou, J (Zhou, Jian); Ogletree, F (Ogletree, Frank); Li, JB (Li, Jingbo); Grossman, JC (Grossman, Jeffrey C.); Wu, JQ (Wu, Junqiao)