Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Source: SCIENTIFIC REPORTS Volume: 3 Article Number: 2657 DOI: 10.1038/srep02657 Published: SEP 13 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Point defects in semiconductors can trap free charge carriers and localize excitons. The interaction between these defects and charge carriers becomes stronger at reduced dimensionalities, and is expected to greatly influence physical properties of the hosting material. We investigated effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductors where the vacancies density is controlled by alpha-particle irradiation or thermal-annealing. We found a new, sub-bandgap emission peak as well as increase in overall photoluminescence intensity as a result of the vacancy generation. Interestingly, these effects are absent when measured in vacuum. We conclude that in opposite to conventional wisdom, optical quality at room temperature cannot be used as criteria to assess crystal quality of the 2D semiconductors. Our results not only shed light on defect and exciton physics of 2D semiconductors, but also offer a new route toward tailoring optical properties of 2D semiconductors by defect engineering.

Addresses: [Tongay, Sefaattin; Suh, Joonki; Fan, Wen; Luce, Alexander; Kang, Jeong Seuk; Liu, Jonathan; Ko, Changhyun; Zhou, Jian; Wu, Junqiao] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA.

[Tongay, Sefaattin; Suh, Joonki; Li, Jingbo; Wu, Junqiao] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Ataca, Can; Raghunathanan, Rajamani; Grossman, Jeffrey C.] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA.

[Luce, Alexander; Ogletree, Frank; Wu, Junqiao] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.

Reprint Address: Wu, JQ (reprint author), Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA.

E-mail Addresses: wuj@berkeley.edu

ISSN: 2045-2322
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Record 102 of 495

Title: Modulation of Fermi velocities of Dirac electrons in single layer graphene by moire superlattice

Author(s): Zou, Q (Zou, Q.); Belle, BD (Belle, B. D.); Zhang, LZ (Zhang, L. Z.); Xiao, WD (Xiao, W. D.); Yang, K (Yang, K.); Liu, LW (Liu, L. W.); Wang, GQ (Wang, G. Q.); Fei, XM (Fei, X. M.); Huang, Y (Huang, Y.); Ma, RS (Ma, R. S.); Lu, Y (Lu, Y.); Tan, PH (Tan, P. H.); Guo, HM (Guo, H. M.); Du, SX (Du, S. X.); Gao, HJ (Gao, H. -J.)

Source: APPLIED PHYSICS LETTERS Volume: 103 Issue: 11 Article Number: 113106 DOI: 10.1063/1.4821178 Published: SEP 9 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Study of electronic properties of graphene on an anisotropic crystal substrate including boron nitride (BN) has raised significant interest recently due to the application of graphene based vertical hetero-devices. We have performed scanning tunneling microscopy (STM) and scanning tunneling spectroscopy studies of single-layer graphene on hexagonal BN (h-BN) substrates with an applied perpendicular magnetic field at low temperature. Different periodic moire superlattices can be resolved with STM, and their quantized Landau levels in high magnetic field are investigated. The renormalized Fermi velocities of massless Dirac fermions in graphene are revealed to show dependent on the moire superlattice. Density functional theory calculation verifies that the interlayer interaction between graphene and h-BN is stronger with smaller twisting angle between lattices of graphene and h-BN, thus, leading to a reduction in the velocity of charge carriers. Our results should provide valuable insight of electronic properties and device performance of graphene on crystal substrates. (C) 2013 AIP Publishing LLC.

Addresses: [Zou, Q.; Zhang, L. Z.; Xiao, W. D.; Yang, K.; Liu, L. W.; Wang, G. Q.; Fei, X. M.; Huang, Y.; Ma, R. S.; Guo, H. M.; Du, S. X.; Gao, H. -J.] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China.

[Belle, B. D.] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England.

[Lu, Y.; Tan, P. H.] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zou, Q (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China.

E-mail Addresses: hmguo@iphy.ac.cn; hjgao@iphy.ac.cn

ISSN: 0003-6951

Record 103 of 495

Title: Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2

Author(s): Zhu, CR (Zhu, C. R.); Wang, G (Wang, G.); Liu, BL (Liu, B. L.); Marie, X (Marie, X.); Qiao, XF (Qiao, X. F.); Zhang, X (Zhang, X.); Wu, XX (Wu, X. X.); Fan, H (Fan, H.); Tan, PH (Tan, P. H.); Amand, T (Amand, T.); Urbaszek, B (Urbaszek, B.)

Source: PHYSICAL REVIEW B Volume: 88 Issue: 12 Article Number: 121301 DOI: 10.1103/PhysRevB.88.121301 Published: SEP 9 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: We use micro-Raman and photoluminescence (PL) spectroscopy at 300 K to investigate the influence of uniaxial tensile strain on the vibrational and optoelectronic properties of monolayer and bilayer MoS2 on a flexible substrate. The initially degenerate E' monolayer Raman mode is split into a doublet as a direct consequence of the strain applied to MoS2 through Van der Waals coupling at the sample-substrate interface. We observe a strong shift of the direct band gap of 48 meV/(% of strain) for the monolayer and 46 meV/% for the bilayer, whose indirect gap shifts by 86 meV/%. We find a strong decrease of the PL polarization linked to optical valley initialization for both monolayer and bilayer samples, indicating that scattering to the spin-degenerate Gamma valley plays a key role.

Addresses: [Zhu, C. R.; Wang, G.; Liu, B. L.; Wu, X. X.; Fan, H.] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.

[Marie, X.; Amand, T.; Urbaszek, B.] Univ Toulouse, INSA CNRS UPS, LPCNO, F-31077 Toulouse, France.

[Qiao, X. F.; Zhang, X.; Tan, P. H.] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Zhu, CR (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.

E-mail Addresses: blliu@iphy.ac.cn; urbaszek@insa-toulouse.fr

ISSN: 1098-0121

Record 104 of 495

Title: Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots

Author(s): Li, ZC (Li, Z. C.); Liu, JP (Liu, J. P.); Feng, MX (Feng, M. X.); Zhou, K (Zhou, K.); Zhang, SM (Zhang, S. M.); Wang, H (Wang, H.); Li, DY (Li, D. Y.); Zhang, LQ (Zhang, L. Q.); Sun, Q (Sun, Q.); Jiang, DS (Jiang, D. S.); Wang, HB (Wang, H. B.); Yang, H (Yang, H.)

Source: JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 9 Article Number: 093105 DOI: 10.1063/1.4820935 Published: SEP 7 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Self-organized InGaN quantum dots (QDs) with emission wavelength from green to red range have been grown on GaN templated c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of matrix layer composition on the structural and optical properties of InGaN QDs have been investigated. A continued growth of QDs is observed during the growth of In0.1Ga0.9N matrix layer, which results in an increase of the QDs' size. By using In0.1Ga0.9N matrix layer instead of GaN one, the annealing induced blue-shift in emission energy of the InGaN QDs can be suppressed. After the growth of top GaN cap layer, a larger red-shift caused by the quantum confined Stark effect is observed in the sample with In0.1Ga0.9N matrix layer. Employing this method, InGaN QD sample emitting at 615 nm with an internal quantum efficiency of 24.3% has been grown. The significance of this method is that it allows a higher growth temperature of InGaN QDs with emission wavelength in the green range to improve the crystalline quality, which is beneficial to enhance the efficiency of green InGaN QD light-emitting-diodes and laser diodes. (C) 2013 AIP Publishing LLC.

Addresses: [Li, Z. C.; Feng, M. X.; Zhou, K.; Jiang, D. S.; Yang, H.] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Li, Z. C.; Liu, J. P.; Feng, M. X.; Zhou, K.; Zhang, S. M.; Wang, H.; Li, D. Y.; Zhang, L. Q.; Sun, Q.; Wang, H. B.] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

[Li, Z. C.; Liu, J. P.; Feng, M. X.; Zhou, K.; Zhang, S. M.; Wang, H.; Li, D. Y.; Zhang, L. Q.; Sun, Q.; Wang, H. B.; Yang, H.] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

Reprint Address: Liu, JP (reprint author), Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

E-mail Addresses: jpliu2010@sinano.ac.cn

ISSN: 0021-8979

Record 105 of 495

Title: Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements

Author(s): Zhang, YM (Zhang, Yamin); Feng, SW (Feng, Shiwei); Zhu, H (Zhu, Hui); Zhang, GC (Zhang, Guangchen); Deng, B (Deng, Bing); Ma, L (Ma, Lin)

Source: JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 9 Article Number: 094516 DOI: 10.1063/1.4820763 Published: SEP 7 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The forward Schottky characteristic method, utilizing the temperature dependence of forward gate-source Schottky junction voltage, has been used to measure the transient temperature rise under DC and cycle pulse for multi-finger AlGaN/GaN high electron mobility transistor. The effect of electrical pulse on channel temperature has been studied. The transient temperature rise of channel under pulses with different duty cycles and frequencies are determined, respectively. The measurement results show that operation under high frequency and/or low duty cycle can improve the lifetime and performance reliability of AlGaN/GaN HEMT devices effectively. Furthermore, the measurement results are found to be consistent with the electro-thermal simulation results performed for the device. (C) 2013 AIP Publishing LLC.

Addresses: [Zhang, Yamin; Feng, Shiwei; Zhu, Hui; Zhang, Guangchen; Deng, Bing; Ma, Lin] Beijing Univ Technol, Coll Elect Informat & Control Engn, Inst Semicond Device Reliabil Phys, Beijing 100124, Peoples R China.

Reprint Address: Zhang, YM (reprint author), Beijing Univ Technol, Coll Elect Informat & Control Engn, Inst Semicond Device Reliabil Phys, Beijing 100124, Peoples R China.

E-mail Addresses: shwfeng@bjut.edu.cn

ISSN: 0021-8979

Record 106 of 495

Title: Boron Nitride Nanopores: Highly Sensitive DNA Single-Molecule Detectors

Author(s): Liu, S (Liu, Song); Lu, B (Lu, Bo); Zhao, Q (Zhao, Qing); Li, J (Li, Ji); Gao, T (Gao, Teng); Chen, YB (Chen, Yubin); Zhang, YF (Zhang, Yanfeng); Liu, ZF (Liu, Zhongfan); Fan, ZC (Fan, Zhongchao); Yang, FH (Yang, Fuhua); You, LP (You, Liping); Yu, DP (Yu, Dapeng)

Source: ADVANCED MATERIALS Volume: 25 Issue: 33 Pages: 4549-4554 DOI: 10.1002/adma.201301336 Published: SEP 6 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Addresses: [Liu, Song; Lu, Bo; Zhao, Qing; Li, Ji; You, Liping; Yu, Dapeng] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China.

[Liu, Song; Lu, Bo; Zhao, Qing; Li, Ji; You, Liping; Yu, Dapeng] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China.

[Gao, Teng; Chen, Yubin; Zhang, Yanfeng; Liu, Zhongfan] Peking Univ, Coll Chem & Mol Engn, State Key Lab Struct Chem Unstable & Stable Speci, Ctr Nanochem CNC,Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China.

[Zhang, Yanfeng] Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China.

[Fan, Zhongchao; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Zhao, Q (reprint author), Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China.

E-mail Addresses: zhaoqing@pku.edu.cn; yudp@pku.edu.cn

ISSN: 0935-9648
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Record 107 of 495

Title: Controllable synthesis of ZnO nanostructures on the Si substrate by a hydrothermal route

Author(s): Dong, JJ (Dong, Jing-Jing); Zhen, CY (Zhen, Chun-Yang); Hao, HY (Hao, Hui-Ying); Xing, J (Xing, Jie); Zhang, ZL (Zhang, Zi-Li); Zheng, ZY (Zheng, Zhi-Yuan); Zhang, XW (Zhang, Xing-Wang)

Source: NANOSCALE RESEARCH LETTERS Volume: 8 Article Number: 378 DOI: 10.1186/1556-276X-8-378 Published: SEP 5 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this paper, controllable synthesis of various ZnO nanostructures was achieved via a simple and cost-effective hydrothermal process on the Si substrate. The morphology evolution of the ZnO nanostructures was well monitored by tuning hydrothermal growth parameters, such as the seed layer, solution concentration, reaction temperature, and surfactant. X-ray diffraction and photoluminescence measurements reveal that crystal quality and optical properties crucially depend on the morphology of the ZnO nanostructures. The ease of synthesis and convenience to tune morphology and optical properties bring this approach great potential for nanoscale applications.

Addresses: [Dong, Jing-Jing; Zhen, Chun-Yang; Hao, Hui-Ying; Xing, Jie; Zhang, Zi-Li; Zheng, Zhi-Yuan] China Univ Geosci, Sch Sci, Beijing 100083, Peoples R China.

[Zhang, Xing-Wang] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Dong, JJ (reprint author), China Univ Geosci, Sch Sci, Beijing 100083, Peoples R China.

E-mail Addresses: jjdong@cugb.edu.cn; zcy19920609@foxmail.com; huiyinghaol@cugb.edu.cn; xingjie@cugb.edu.cn; zlzhang@cugb.edu.cn; zhyzheng@cugb.edu.cn; xwzhang@semi.ac.cn

ISSN: 1931-7573
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Record 108 of 495

Title: A 1319 nm diode-side-pumped Nd:YAG laser Q-switched with graphene oxide

Author(s): Zhang, L (Zhang, Ling); Yu, HJ (Yu, Haijuan); Yan, SL (Yan, Shilian); Zhao, WF (Zhao, Weifang); Sun, W (Sun, Wei); Yang, YY (Yang, Yingying); Wang, LR (Wang, Lirong); Hou, W (Hou, Wei); Lin, XC (Lin, Xuechun); Wang, YG (Wang, Yonggang); Wang, YS (Wang, Yishan)

Source: JOURNAL OF MODERN OPTICS Volume: 60 Issue: 15 Pages: 1287-1289 DOI: 10.1080/09500340.2013.837975 Published: SEP 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We have demonstrated a diode-side-pumped Q-switched Nd:YAG laser operating at 1319nm with a saturable absorber of graphene oxide fabricated by the vertical evaporation method. The 1319nm Q-switched laser pulses were realized with average output power of 820 mW, pulse width of 2s and repetition rate of 35kHz. The pulse energy and peak power were 23.4J and 11.7W, respectively when the optical pump power was 232W. The experimental results indicate that graphene oxide is an effective saturable absorber for Q-switched lasers.

Addresses: [Zhang, Ling; Yu, Haijuan; Yan, Shilian; Zhao, Weifang; Sun, Wei; Yang, Yingying; Wang, Lirong; Hou, Wei; Lin, Xuechun] Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing 100083, Peoples R China.

[Wang, Yonggang; Wang, Yishan] Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China.

Reprint Address: Lin, XC (reprint author), Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing 100083, Peoples R China.

E-mail Addresses: chinawygxjw@opt.ac.cn; xclin@semi.ac.cn

ISSN: 0950-0340
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Record 109 of 495

Title: Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization

Author(s): Li, HJ (Li, Hongjian); Li, PP (Li, Panpan); Kang, JJ (Kang, Junjie); Li, Z (Li, Zhi); Zhang, YY (Zhang, Yiyun); Liang, M (Liang, Meng); Li, ZC (Li, Zhicong); Li, J (Li, Jing); Yi, XY (Yi, Xiaoyan); Wang, GH (Wang, Guohong)

Source: APPLIED PHYSICS EXPRESS Volume: 6 Issue: 9 Article Number: 092101 DOI: 10.7567/APEX.6.092101 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Carrier localization can be modeled as a parameter of reduced effective volumes of the active region within the efficiency equation to describe efficiency droop of InGaN light-emitting diodes (LEDs). Reduced effective volume due to carrier localized in the potential minima of In-rich areas results in an increase of carrier density, which accelerates the saturation of radiative recombination as well as the loss of Auger recombination and carrier overflow. Wavelength-dependent droop can be well modeled with different reduced effective volumes of the active region. (c) 2013 The Japan Society of Applied Physics

Addresses: [Li, Hongjian; Li, Panpan; Kang, Junjie; Li, Zhi; Zhang, Yiyun; Liang, Meng; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Wang, Guohong] Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.

Reprint Address: Li, HJ (reprint author), Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.

E-mail Addresses: semi_lihongjian@126.com

ISSN: 1882-0778

Record 110 of 495

Title: High efficiency beam combination of 4.6-mu m quantum cascade lasers

Author(s): Wu, H (Wu, Hao); Wang, LJ (Wang, Lijun); Liu, FQ (Liu, Fengqi); Peng, HY (Peng, Hangyu); Zhang, J (Zhang, Jun); Tong, CZ (Tong, Cunzhu); Ning, YQ (Ning, Yongqiang); Wang, LJ (Wang, Lijun)

Source: CHINESE OPTICS LETTERS Volume: 11 Issue: 9 Article Number: 091401 DOI: 10.3788/COL201311.091401 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The quantum cascade laser (QCL), a potential laser source for mid-infrared applications, has all of the advantages of a semiconductor laser, such as small volume and light weight, and is driven by electric power. However, the optical power of a single QCL is limited by serious self-heating effects. Therefore, beam combination technology is essential to achieve higher laser powers. In this letter, we demonstrate a simple beam combination scheme using two QCLs to extend the output peak power of the lasers to 2.3 W. A high beam combination efficiency of 89% and beam quality factor of less than 5 are also achieved.

Addresses: [Wu, Hao; Peng, Hangyu; Zhang, Jun; Tong, Cunzhu; Ning, Yongqiang; Wang, Lijun] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China.

[Wang, Lijun; Liu, Fengqi] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Tong, CZ (reprint author), Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China.

E-mail Addresses: tongcz@ciomp.ac.cn

ISSN: 1671-7694
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Record 111 of 495

Title: Grain boundary ferromagnetism in vanadium-doped In2O3 thin films

Author(s): Feng, Q (Feng, Qi); Blythe, HJ (Blythe, Harry J.); Fox, AM (Fox, A. Mark); Qin, XF (Qin, Xiu-Fang); Xu, XH (Xu, Xiao-Hong); Heald, SM (Heald, Steve M.); Gehring, GA (Gehring, Gillian A.)

Source: EPL Volume: 103 Issue: 6 Article Number: 67007 DOI: 10.1209/0295-5075/103/67007 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Room temperature ferromagnetism was observed in In2O3 thin films doped with 5 at.% V, prepared by pulsed-laser deposition at substrate temperatures ranging from 300 to 600 degrees C. X-ray absorption fine-structure measurement indicated that V was substitutionally dissolved in the In2O3 host lattice, thus excluding the existence of secondary phases of V compounds. Magnetic measurements based on SQUID magnetometry and magnetic circular dichroism confirm that the magnetism is at grain boundaries and also in the grains. The overall magnetization originates from the competing effects between grains and grain boundaries. Copyright (C) EPLA, 2013

Addresses: [Feng, Qi; Blythe, Harry J.; Fox, A. Mark; Gehring, Gillian A.] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England.

[Qin, Xiu-Fang; Xu, Xiao-Hong] Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China.

[Heald, Steve M.] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA.

Reprint Address: Feng, Q (reprint author), Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: fengqi1985@gmail.com; g.gehring@sheffield.ac.uk

ISSN: 0295-5075

Record 112 of 495

Title: Optimization of direct modulation rate for circular microlasers by adjusting mode Q factor

Author(s): Lv, XM (Lv, Xiao-Meng); Huang, YZ (Huang, Yong-Zhen); Zou, LX (Zou, Ling-Xiu); Long, H (Long, Heng); Du, Y (Du, Yun)

Source: LASER & PHOTONICS REVIEWS Volume: 7 Issue: 5 Pages: 818-829 DOI: 10.1002/lpor.201300036 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Semiconductor microcircular lasers have been investigated as potential light sources for photonic integrated circuits and optical interconnections for more than two decades. However, the direct modulation bandwidths of the circular microlasers remain a challenge, especially when being compared with other microlasers, such as photonic crystal lasers. In this paper, microcircular lasers connected to an output waveguide are investigated for high-speed direct modulation with optimized mode Q factors. Small signal modulation with a resonance frequency of f(R) = 12.5 GHz is realized for a AlGaInAs/InP circular microlaser with a radius of 10 mu m at 290 K. Furthermore, clear eye diagrams are observed at 12.5 Gbit/s for a 15-mu m radius circular microlaser with f(R) = 6.9 GHz.

Addresses: [Lv, Xiao-Meng; Huang, Yong-Zhen; Zou, Ling-Xiu; Long, Heng; Du, Yun] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Huang, YZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, A35 QingHua East Rd, Beijing 100083, Peoples R China.

E-mail Addresses: yzhuang@semi.ac.cn

ISSN: 1863-8880

Record 113 of 495

Title: Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography

Author(s): Wu, K (Wu, Kui); Zhang, YY (Zhang, Yiyun); Wei, TB (Wei, Tongbo); Lan, D (Lan, Ding); Sun, B (Sun, Bo); Zheng, HY (Zheng, Haiyang); Lu, HX (Lu, Hongxi); Chen, Y (Chen, Yu); Wang, JX (Wang, Junxi); Luo, Y (Luo, Yi); Li, JM (Li, Jinmin)