Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

E-mail Addresses: wanglc@ntu.edu.sg; spring@semi.ac.cn

ISSN: 0021-8979
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Record 63 of 495

Title: Demonstration of a vertical pin Ge-on-Si photo-detector on a wet-etched Si recess

Author(s): Fang, Q (Fang, Qing); Jia, LX (Jia, Lianxi); Song, JF (Song, Junfeng); Lim, AEJ (Lim, Andy E. J.); Tu, XG (Tu, Xiaoguang); Luo, XS (Luo, Xianshu); Yu, MB (Yu, Mingbin); Lo, GQ (Lo, Guoqiang)

Source: OPTICS EXPRESS Volume: 21 Issue: 20 Pages: 23325-23330 DOI: 10.1364/OE.21.023325 Published: OCT 7 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this paper, we demonstrate a vertical pin Ge-on-Si photo-detector on a wet-etched Si recess on a SOI wafer. A 120nm-deep Si recess is etched on the SOI wafer with a 340nm-thick top Si layer by the TMAH solution. The measured results show that the responsivity is more than 0.60 A/W for TE polarization and is more than 0.65 A/W for TM polarization at 1550 nm wavelength. Compared to the photo-detector without the Si recess, the responsivities for both TE and TM polarizations are improved by similar to 10%. A low dark current of 170 nA is achieved at a bias voltage of -1 V. And, the 3dB-bandwidth at a bias voltage of -3 V is 21.5 GHz. This approach can be used to improve the coupling and absorption for high responsivity of photo-detector while maintain its high speed on a thick SOI platform based on the simulation results. (C) 2013 Optical Society of America

Addresses: [Fang, Qing; Jia, Lianxi; Song, Junfeng; Lim, Andy E. J.; Tu, Xiaoguang; Luo, Xianshu; Yu, Mingbin; Lo, Guoqiang] A STAR Agcy Sci & Technol Res, Inst Microelect, Singapore 117685, Singapore.

[Fang, Qing] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

[Song, Junfeng] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China.

Reprint Address: Fang, Q (reprint author), A STAR Agcy Sci & Technol Res, Inst Microelect, Singapore 117685, Singapore.

E-mail Addresses: fangq@ime.a-star.edu.sg

ISSN: 1094-4087

Record 64 of 495

Title: Direct generation of broadband chaos by a monolithic integrated semiconductor laser chip

Author(s): Wu, JG (Wu, Jia-Gui); Zhao, LJ (Zhao, Ling-Juan); Wu, ZM (Wu, Zheng-Mao); Lu, D (Lu, Dan); Tang, X (Tang, Xi); Zhong, ZQ (Zhong, Zhu-Qiang); Xia, GQ (Xia, Guang-Qiong)

Source: OPTICS EXPRESS Volume: 21 Issue: 20 Pages: 23358-23364 DOI: 10.1364/OE.21.023358 Published: OCT 7 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A solitary monolithic integrated semiconductor laser (MISL) chip with a size of 780 micrometer is designed and fabricated for broadband chaos generation. Such a MISL chip consists of a DFB section, a phase section and an amplification section. Test results indicate that under suitable operation conditions, this laser chip can be driven into broadband chaos. The generated chaos covers an RF frequency range, limited by our measurement device, of 26.5GHz, and possesses significant dimension and complexity. Moreover, the routes into and out of chaos are also characterized through extracting variety dynamical states of temporal waveforms, phase portraits, RF spectra and statistical indicators. (C) 2013 Optical Society of America

Addresses: [Wu, Jia-Gui; Wu, Zheng-Mao; Tang, Xi; Zhong, Zhu-Qiang; Xia, Guang-Qiong] Southwest Univ, Sch Phys, Chongqing 400715, Peoples R China.

[Zhao, Ling-Juan; Lu, Dan] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Xia, GQ (reprint author), Southwest Univ, Sch Phys, Chongqing 400715, Peoples R China.

E-mail Addresses: gqxia@swu.edu.cn

ISSN: 1094-4087
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Record 65 of 495

Title: Passive Q-switching in a diode-side-pumped Nd:YAG laser at 1.319 mu m

Author(s): Yan, SL (Yan, Shilian); Zhang, L (Zhang, Ling); Yu, HJ (Yu, Haijuan); Li, ML (Li, Menglong); Sun, W (Sun, Wei); Hou, W (Hou, Wei); Lin, XC (Lin, Xuechun); Wang, YG (Wang, Yonggang); Wang, YS (Wang, Yishan)

Source: OPTICAL ENGINEERING Volume: 52 Issue: 10 Article Number: 106107 DOI: 10.1117/1.OE.52.10.106107 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We demonstrated a passively Q-switched Nd:YAG laser operating at 1.319 mu m using a transmission-type single-wall carbon nanotube (SWCNT) as the saturable absorber. This is the first report on using SWCNT as a Q-switcher for 1.319 mu m Nd:YAG laser in a side-pumped configuration. A maximum output power of 780 mW was obtained with 1.15-mu s pulse duration and 42.7-kHz repetition rate. (C) 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)

Addresses: [Yan, Shilian; Zhang, Ling; Yu, Haijuan; Li, Menglong; Sun, Wei; Hou, Wei; Lin, Xuechun] Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing 100083, Peoples R China.

[Wang, Yonggang; Wang, Yishan] Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China.

Reprint Address: Yan, SL (reprint author), Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing 100083, Peoples R China.

E-mail Addresses: xclin@semi.ac.cn; chinawygxjw@hotmail.com

ISSN: 0091-3286
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Record 66 of 495

Title: A LOW POWER 2.4 GHz RF TRANSCEIVER FOR ZIGBEE APPLICATIONS

Author(s): Liu, WY (Liu, Weiyang); Chen, JJ (Chen, Jingjing); Wang, HY (Wang, Haiyong); Wu, NJ (Wu, Nanjian)

Source: JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS Volume: 22 Issue: 9 Special Issue: SI Article Number: 1340007 DOI: 10.1142/S0218126613400070 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: This paper presents a low power RF transceiver for 2.4 GHz ZigBee applications. The current reused inductor-less-load balun low noise amplifier (LNA) with quadrature mixer is proposed for area and power saving for low-IF receiver. The transmitter adopts power efficient power ampli fier (PA) to improve transmitting efficiency. This RF transceiver is implemented in 0.18 mu m CMOS technology. The receiver achieves 6.5 dB noise figure (NF) and 20 dB conversion gain. The transmitter delivers maximum +3dBm output power with PA efficiency of 30%. The receiver and transmitter front-end dissipate 1.9 mW and 5.3 mW at 1.8 V supply, respectively. The whole die area is 0.95 mm(2).

Addresses: [Liu, Weiyang; Chen, Jingjing; Wang, Haiyong; Wu, Nanjian] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Wu, NJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: nanjian@red.semi.ac.cn

ISSN: 0218-1266

Record 67 of 495

Title: Design of a high-speed silicon electro-optical modulator based on an add-drop micro-ring resonator

Author(s): Cao, TT (Cao Tong-Tong); Zhang, LB (Zhang Li-Bin); Fei, YH (Fei Yong-Hao); Cao, YM (Cao Yan-Mei); Lei, X (Lei Xun); Chen, SW (Chen Shao-Wu)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 19 Article Number: 194210 DOI: 10.7498/aps.62.194210 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Silicon electro-optical modulators based on add-drop micro-ring resonators have the advantage of more freedom in designing high-extinction-ratio and large-bandwidth modulators without changing the ion doping processes of the chip. Here we design a highspeed silicon modulator based on an add-drop micro-ring resonator with a radius of 20 mu m; it demonstrates high extinction ratio with low reverse bias. How the coupling between the straight waveguide and the ring resonator affects the performances is studied theoretically and it is found that a lower coupling coefficient at drop port leads to a higher extinction ratio but not the best bandwidth. Therefore, a balance should be considered between extinction ratio and bandwidth. According to the optimized result of the parameters the device is fabricated and tested. The spectrum testing indicates that the device can have 12 dB extinction ratio when it is operated at 3 V reverse bias. Furthermore, we have observed 8 Gbps open-eye diagram with only 1.2 V peak-to-peak signal voltage.

Addresses: [Cao Tong-Tong; Zhang Li-Bin; Fei Yong-Hao; Cao Yan-Mei; Lei Xun; Chen Shao-Wu] Chinese Acad Sci, Inst Semicond, State Key Lab Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Chen, SW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: swchen@semi.ac.cn

ISSN: 1000-3290

Record 68 of 495

Title: Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN

Author(s): Li, XJ (Li Xiao-Jing); Zhao, DG (Zhao De-Gang); He, XG (He Xiao-Guang); Wu, LL (Wu Liang-Liang); Li, L (Li Liang); Yang, J (Yang Jing); Le, LC (Le Ling-Cong); Chen, P (Chen Ping); Liu, ZS (Liu Zong-Shun); Jiang, DS (Jiang De-Sheng)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 20 Article Number: 206801 DOI: 10.7498/aps.62.206801 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this paper, we investigate the effect of annealing conditions on the characteristic of Ni/Au Ohmic contact to p-GaN. The specific contact resistivities under different annealing temperature and different annealing atmosphere are tested using the circular transmission line model. It is found that the best annealing temperature is about 500 C. The annealing atmosphere of nitrogen-oxygen gas mixture can lead to lower specific contact resistivity than that of pure nitrogen, and the specific contact resistivity has no relationship with the content of oxygen. Finally, we obtain the lowest specific contact resistivity to be 7.65 x 10(-4) Omega.cm(2) at the best annealing temperature and atmosphere.

Addresses: [Li Xiao-Jing; Zhao De-Gang; He Xiao-Guang; Wu Liang-Liang; Li Liang; Yang Jing; Le Ling-Cong; Chen Ping; Liu Zong-Shun; Jiang De-Sheng] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Zhao, DG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: dgzhao@red.semi.ac.cn

ISSN: 1000-3290

Record 69 of 495

Title: Properties of delta doped GaAs/A1(chi)Ga(1-chi) As 2DEG with embedded InAs quantum dots

Author(s): Wang, HP (Wang Hong-Pei); Wang, GL (Wang Guang-Long); Yu, Y (Yu Ying); Xu, YQ (Xu Ying-Qiang); Ni, HQ (Ni Hai-Qiao); Niu, ZC (Niu Zhi-Chuan); Gao, FQ (Gao Feng-Qi)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 20 Article Number: 207303 DOI: 10.7498/aps.62.207303 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The delta-doped GaAs/AlxGa1-xAs 2DEG samples are grown with molecular beam epitaxy. In this process, the doping concentration (Nd), spatial isolation layer thickness (Wd) and Al component of ALGai_ As (xAl) are changed separately. Then Hall measurements on the samples are made in the two temperature conditions (300 and 78 K). According to the test results, the relationships of Nd, Wd and xAl to the carrier density and mobility of GaAs/AlxGa1-xAs 2DEG are discussed respectively. The b-doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dot samples are grown, and InAs quantum dots with different densities are grown with gradient growth method. The Hall measurement results show that the mobility of GaAs/AEGai_ As 2DEG greatly decreases with density of InAs quantum dots steadily increasing. In experiments, the lowest density of 16 x 108/cm2 InAs quantum dot sample is obtained. The experimental results can provide a reference for the study and application of b-doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots.

Addresses: [Wang Hong-Pei; Wang Guang-Long; Gao Feng-Qi] Ordnance Engn Coll, Lab Nanotechnol & Microsyst, Shijiazhuang 050003, Peoples R China.

[Wang Hong-Pei; Yu Ying; Xu Ying-Qiang; Ni Hai-Qiao; Niu Zhi-Chuan] Chinese Acad Sci, Inst Semicond, Natl Lab Superlatt & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Wang, HP (reprint author), Ordnance Engn Coll, Lab Nanotechnol & Microsyst, Shijiazhuang 050003, Peoples R China.

E-mail Addresses: realwhp@163.com

ISSN: 1000-3290
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Record 70 of 495

Title: Quantum-dot gated field effect enhanced single-photon detectors

Author(s): Wang, HP (Wang Hong-Pei); Wang, GL (Wang Guang-Long); Ni, HQ (Ni Hai-Qiao); Xu, YQ (Xu Ying-Qiang); Niu, ZC (Niu Zhi-Chuan); Gao, FQ (Gao Feng-Qi)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 19 Article Number: 194205 DOI: 10.7498/aps.62.194205 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In order to solve the problem of low light absorption efficiency of single photon detectors based on quantum-dot gated field effect transistor (QDFET), a new type of quantum-dot gated field effect enhanced single-photon detectors (QDFEE-SPD) was proposed. QDFEE-SPD was designed with a resonant cavity, and the GaAs/AlAs multilayer was used as the basic mirror. The light absorption efficiency and responsivity of QDFEE-SPD were analyzed and simulated. Results show that, compared with that without cavity, the absorption efficiency and responsivity of the QDFEE-SPD is greatly improved. Also for the optimization of light absorption efficiency, the thickness of the absorption layer should normally be 0.1-0.5 mu m. Then the material samples of QDFEE-SPD were grown and tested. Reflection spectroscopy and PL spectroscopy testing results show that the light absorption efficiency has been significantly enhanced. The achievements in this article provide a new way for researching high-efficiency single-photon detection technology based on QDFET.

Addresses: [Wang Hong-Pei; Wang Guang-Long; Gao Feng-Qi] Ordnance Engn Coll, Lab Nanotechnol & Microsyst, Shijiazhuang 050003, Peoples R China.

[Wang Hong-Pei; Ni Hai-Qiao; Xu Ying-Qiang; Niu Zhi-Chuan] Chinese Acad Sci, Inst Semicond, Natl Lab Superlatt & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Wang, HP (reprint author), Ordnance Engn Coll, Lab Nanotechnol & Microsyst, Shijiazhuang 050003, Peoples R China.

E-mail Addresses: realwhp@163.com

ISSN: 1000-3290
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Record 71 of 495

Title: Study of data format transform with optical waveguide resonators

Author(s): Zhang, LB (Zhang Li-Bin); Chen, SW (Chen Shao-Wu); Fei, YH (Fei Yong-Hao); Cao, TT (Cao Tong-Tong); Cao, YM (Cao Yan-Mei); Lei, X (Lei Xun)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 19 Article Number: 194201 DOI: 10.7498/aps.62.194201 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Based on the linear property of silicon microring resonators, we experimentally observed that such resonator can transform square-wave signal into pulse-wave signal, and the output waveform is strongly dependent on the input wavelength. We then proposed a mathematical model, which utilized linear coupling mode theory, Fourier transform and electro-optical Mach-Zehnder (MZ) intensity modulation functions. The numerical simulation results fit well with the experimental results. Besides, we gave a detailed explanation based on the transfer function of microrings. Furthermore, we have studied the case when the ring resonator is deviated from the critical coupling condition, and found that the coupling state, over coupling or under coupling, can be easily judged through the output waveform.

Addresses: [Zhang Li-Bin; Chen Shao-Wu; Fei Yong-Hao; Cao Tong-Tong; Cao Yan-Mei; Lei Xun] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Chen, SW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: swchen@semi.ac.cn

ISSN: 1000-3290

Record 72 of 495

Title: Design and fabrication of a high-performance evanescently coupled waveguide photodetector

Author(s): Liu, SQ (Liu Shao-Qing); Yang, XH (Yang Xiao-Hong); Liu, Y (Liu Yu); Li, B (Li Bin); Han, Q (Han Qin)

Source: CHINESE PHYSICS B Volume: 22 Issue: 10 Article Number: 108503 DOI: 10.1088/1674-1056/22/10/108503 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this paper, we present the design, fabrication, and measurement of an evanescently coupled waveguide photodetector operating at 1.55 mu m, which mainly comprises a diluted waveguide, a single-mode rib waveguide and a p-i-n photodiode with an extended optical matching layer. The optical characteristics of this structure are studied by using a three-dimensional finite-difference time-domain (3D FDTD) method. The photodetector exhibits a high 3-dB bandwidth of more than 35 GHz and a responsivity of 0.291 A/W at 1550 nm directly coupled with a cleaved fiber. Moreover, a linear response of more than 72-mW optical power is achieved, where a photocurrent of more than 21 mA is obtained at a reverse bias voltage of 3 V.

Addresses: [Liu Shao-Qing; Yang Xiao-Hong; Liu Yu; Li Bin; Han Qin] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Yang, XH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: xhyang@semi.ac.cn; hanqin@red.semi.ac.cn

ISSN: 1674-1056

Record 73 of 495

Title: A mode-locked external-cavity quantum-dot laser with a variable repetition rate

Author(s): Wu, J (Wu Jian); Jin, P (Jin Peng); Li, XK (Li Xin-Kun); Wei, H (Wei Heng); Wu, YH (Wu Yan-Hua); Wang, FF (Wang Fei-Fei); Chen, HM (Chen Hong-Mei); Wu, J (Wu Ju); Wang, ZG (Wang Zhan-Guo)

Source: CHINESE PHYSICS B Volume: 22 Issue: 10 Article Number: 104206 DOI: 10.1088/1674-1056/22/10/104206 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A mode-locked external-cavity laser emitting at 1.17-mu m wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity length, repetition rates of 854, 912, and 969 MHz are achieved respectively. The narrowest -3-dB radio-frequency linewidth obtained is 38 kHz, indicating that the laser is under stable mode-locking operation.

Addresses: [Jin Peng] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Jin, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: pengjin@semi.ac.cn

ISSN: 1674-1056
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Record 74 of 495

Title: A high figure of merit localized surface plasmon sensor based on a gold nanograting on the top of a gold planar film

Author(s): Zhang, ZY (Zhang Zu-Yin); Wang, LN (Wang Li-Na); Hu, HF (Hu Hai-Feng); Li, KW (Li Kang-Wen); Ma, XP (Ma Xun-Peng); Song, GF (Song Guo-Feng)

Source: CHINESE PHYSICS B Volume: 22 Issue: 10 Article Number: 104213 DOI: 10.1088/1674-1056/22/10/104213 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We investigate the sensitivity and figure of merit (FOM) of a localized surface plasmon (LSP) sensor with gold nanograting on the top of planar metallic film. The sensitivity of the localized surface plasmon sensor is 317 nm/RIU, and the FOM is predicted to be above 8, which is very high for a localized surface plasmon sensor. By employing the rigorous coupled-wave analysis (RCWA) method, we analyze the distribution of the magnetic field and find that the sensing property of our proposed system is attributed to the interactions between the localized surface plasmon around the gold nanostrips and the surface plasmon polarition on the surface of the gold planar metallic film. These findings are important for developing high FOM localized surface plasmon sensors.

Addresses: [Zhang Zu-Yin; Wang Li-Na; Hu Hai-Feng; Li Kang-Wen; Ma Xun-Peng; Song Guo-Feng] Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China.

Reprint Address: Zhang, ZY (reprint author), Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China.

E-mail Addresses: wo2baobao1213@163.com

ISSN: 1674-1056

Record 75 of 495

Title: High-detectivity InAs nanowire photodetectors with spectral response from ultraviolet to near-infrared

Author(s): Liu, Z (Liu, Zhe); Luo, T (Luo, Tao); Liang, B (Liang, Bo); Chen, G (Chen, Gui); Yu, G (Yu, Gang); Xie, XM (Xie, Xuming); Chen, D (Chen, Di); Shen, GZ (Shen, Guozhen)

Source: NANO RESEARCH Volume: 6 Issue: 11 Pages: 775-783 DOI: 10.1007/s12274-013-0356-0 Published: OCT 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: InAs is a direct, narrow band gap (0.354 eV) material with ultrahigh electron mobility, and is potentially a good optoelectronic device candidate in the wide UV-visible-near-infrared region. In this work we report the fabrication of InAs nanowire-based photodetectors, which showed a very high photoresponse over a broad spectral range from 300 to 1,100 nm. The responsivity, external quantum efficiency and detectivity of the device were respectively measured to be 4.4 x 10(3) AW(-1), 1.03 x 10(6)%, and 2.6 x 10(11) Jones to visible incident light. Time dependent measurements at different wavelengths and under different light intensities also demonstrated the fast, reversible, and stable photoresponse of our device. Theoretical calculations of the optical absorption and the electric field component distribution were also performed to elucidate the mechanism of the enhanced photoresponse. Our results demonstrate that the single-crystalline InAs NWs are very promising candidates for the design of high sensitivity and high stability nanoscale photodetectors with a broad band photoresponse.

Addresses: [Liu, Zhe; Liang, Bo; Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Liu, Zhe; Luo, Tao; Liang, Bo; Chen, Gui; Yu, Gang; Xie, Xuming; Chen, Di] Huazhong Univ Sci & Technol, WNLO, Wuhan 430074, Peoples R China.