Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Author(s): Fang, ZQ (Fang, Zhiqiang); Mao, X (Mao, Xu); Yang, JL (Yang, Jinling); Yang, FH (Yang, Fuhua)

Source: JOURNAL OF MICROMECHANICS AND MICROENGINEERING Volume: 23 Issue: 9 Article Number: 095008 DOI: 10.1088/0960-1317/23/9/095008 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Sn-rich Au-Sn solder bonding has been systematically investigated for low temperature wafer-level hermetic packaging of high-end micro-electro-mechanical systems (MEMS) devices. The AuSn2 phase with the highest Vickers-hardness among the four stable intermetallic compounds of the Au-Sn system makes a major contribution to the high bonding strength. A maximum shear strength of 64 MPa and a leak rate lower than 4.9 x 10(-7) atm-cc s(-1) have been obtained for Au46Sn54 solder bonded at 310 degrees C. In addition, several routines have been used to effectively inhibit the solder overflow and preserve a good bonding strength and water resilience: producing dielectric SiO2 structures which do not wet the melting solder to the surrounding bonding region, reducing the bonding pressure, and prolonging the bonding time. This wafer level bonding technique with good hermeticity can be applied to MEMS devices requiring a low temperature package.

Addresses: [Fang, Zhiqiang; Mao, Xu; Yang, Jinling; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Fang, Zhiqiang; Mao, Xu; Yang, Jinling] State Key Lab Transducer Technol, Shanghai 200050, Peoples R China.

Reprint Address: Yang, JL (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: jlyang@semi.ac.cn

ISSN: 0960-1317
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Record 126 of 495

Title: Synthesis of chalcopyrite CuIn1-xGaxSe2 alloys for photovoltaic application by a novel melting method

Author(s): Chen, T (Chen, Teng); Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Yang, J (Yang, Jun); Liu, T (Liu, Tong)

Source: MATERIALS LETTERS Volume: 106 Pages: 52-55 DOI: 10.1016/j.matlet.2013.04.100 Published: SEP 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: CuIn1-xGaxSe2 (CIGS) compounds used for the fabrication of thin-film solar cell absorber layers have been synthesized by a novel melting method which is easily controlled and practical. Based on vapor phase transport caused by the temperature gradient built, the quaternary CIGS alloy was prepared from the low-cost elementary Cu, In, Ga and Se in a closed quartz tube at 1100 degrees C for 3 h. Through various characterization methods, the as-synthesized alloy with crystal grains sized 100-150 mu m presented a desirable chemical composition and a single-phase chalcopyrite structure. Furthermore, the CIGS absorber layer made from this material turned out to be high-quality with a correct phase and large nanocrystals, indicating great application potential of the proposed method in low-cost solar cell fabrication. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Chen, Teng; Zhao, Youwen; Dong, Zhiyuan; Yang, Jun; Liu, Tong] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Chen, Teng; Zhao, Youwen; Dong, Zhiyuan; Yang, Jun; Liu, Tong] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Chen, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: chenteng@semi.ac.cn

ISSN: 0167-577X
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Record 127 of 495

Title: A high average power single-stage picosecond double-clad fiber amplifier

Author(s): Sun, W (Sun, W.); Yu, HJ (Yu, H. J.); Zhang, L (Zhang, L.); Yan, SL (Yan, S. L.); Dong, ZY (Dong, Z. Y.); Han, ZH (Han, Z. H.); Hou, W (Hou, W.); Li, JM (Li, J. M.); Lin, XC (Lin, X. C.)

Source: LASER PHYSICS Volume: 23 Issue: 9 Article Number: 095101 DOI: 10.1088/1054-660X/23/9/095101 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this paper, we report 38.8 W average power output through a single-stage fiber amplifier, with emission of 1064 nm wavelength with 80 MHz repetition and 35 ps pulse width amplified from a 2.15 W SESAM passively mode-locked Nd:YVO4 laser oscillator. The high power fiber amplification is through a coupled 60.8 W 976 nm backward unidirectional pump power into a 2 m long 30/250 mu m Yb-doped inner cladding. No obvious nonlinear effects arise in the high power output. To our knowledge this is the highest average power output with 2 m 30/250 mu m Yb-doped double-clad fiber in a single-stage picosecond fiber amplifier.

Addresses: [Sun, W.; Yu, H. J.; Zhang, L.; Yan, S. L.; Dong, Z. Y.; Han, Z. H.; Hou, W.; Li, J. M.; Lin, X. C.] Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing 100083, Peoples R China.

Reprint Address: Sun, W (reprint author), Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, Beijing 100083, Peoples R China.

E-mail Addresses: xclin@semi.ac.cn

ISSN: 1054-660X

Record 128 of 495

Title: Photonic generation of widely tunable and background-free binary phase-coded radio-frequency pulses

Author(s): Li, W (Li, Wei); Wang, LX (Wang, Li Xian); Li, M (Li, Ming); Zhu, NH (Zhu, Ning Hua)

Source: OPTICS LETTERS Volume: 38 Issue: 17 Pages: 3441-3444 DOI: 10.1364/OL.38.003441 Published: SEP 1 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: We present a novel photonic approach to generating widely tunable and background-free binary phase-coded radio-frequency (RF) pulses by cascading a polarization modulator (PolM) and a phase modulator (PM). The PolM is used to produce an optical carrier and two sidebands with orthogonal polarization states. The phase shift theta between the optical carrier and the sidebands is controlled by the electrical driving signal applied to the PM. For theta > pi/2 or < pi/2, the phase of the detected RF signal is 0 or pi, respectively. For theta = pi/2, there is no RF signal recovered in the photodiode (PD). In this way, binary phase-coded RF pulses can be generated, while the optical power launched to the PD keeps constant. The proposed technique is therefore background free by eliminating the baseband frequency components. Moreover, the carrier frequency of the RF pulses is widely tunable and the p phase shift of the RF signal is independent of the amplitude of the electrical driving signal. The proposed scheme is theoretically analyzed and experimentally verified. (C) 2013 Optical Society of America

Addresses: [Li, Wei; Wang, Li Xian; Li, Ming; Zhu, Ning Hua] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhu, NH (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

E-mail Addresses: nhzhu@semi.ac.cn

ISSN: 0146-9592

Record 129 of 495

Title: Two-mode multiplexer and demultiplexer based on adiabatic couplers

Author(s): Xing, JJ (Xing, Jiejiang); Li, ZY (Li, Zhiyong); Xiao, X (Xiao, Xi); Yu, JZ (Yu, Jinzhong); Yu, YD (Yu, Yude)

Source: OPTICS LETTERS Volume: 38 Issue: 17 Pages: 3468-3470 DOI: 10.1364/OL.38.003468 Published: SEP 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A two-mode (de) multiplexer based on adiabatic couplers is proposed and experimentally demonstrated. The experimental results are in good agreement with the simulations. An ultralow mode cross talk below -36 dB and a low insertion loss of about 0.3 dB over a broad bandwidth from 1500 to 1600 nm are measured. The design is also fabrication-tolerant, and the insertion loss can be further improved in the future. (C) 2013 Optical Society of America

Addresses: [Xing, Jiejiang; Li, Zhiyong; Xiao, Xi; Yu, Jinzhong; Yu, Yude] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Yu, YD (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yudeyu@semi.ac.cn

ISSN: 0146-9592

Record 130 of 495

Title: Numerical computation of pyramidal quantum dots with band non-parabolicity

Author(s): Gong, L (Gong Liang); Shu, YC (Shu Yong-chun); Xu, JJ (Xu Jing-jun); Wang, ZG (Wang Zhan-guo)

Source: SUPERLATTICES AND MICROSTRUCTURES Volume: 61 Pages: 81-90 DOI: 10.1016/j.spmi.2013.06.011 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: This paper presents an effective and feasible eigen-energy scanning method to solve polynomial matrix eigenvalues introduced by 3D quantum dots problem with band non-parabolicity. The pyramid-shaped quantum dot is placed in a computational box with uniform mesh in Cartesian coordinates. Its corresponding Schrodinger equation is discretized by the finite difference method. The interface conditions are incorporated into the discretization scheme without explicitly enforcing them. By comparing the eigenvalues from isolated quantum dots and a vertically aligned regular array of them, we investigate the coupling effect for variable distances between the quantum dots and different size. (C) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Gong Liang; Shu Yong-chun; Xu Jing-jun] Nankai Univ, Minist Educ, Key Lab Adv Tech & Fabricat Weak Light Nonlinear, Tianjin 300457, Peoples R China.

[Wang Zhan-guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Gong, L (reprint author), Nankai Univ, Minist Educ, Key Lab Adv Tech & Fabricat Weak Light Nonlinear, Tianjin 300457, Peoples R China.

E-mail Addresses: gongliang@mail.nankai.edu.cns

ISSN: 0749-6036
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Record 131 of 495

Title: Preparation and photoluminescence properties of reverse type-I ZnO/PbS core/shell nanorods

Author(s): He, ZH (He, Zhaohui); Meng, XQ (Meng, Xiuqing)

Source: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Volume: 24 Issue: 9 Pages: 3365-3370 DOI: 10.1007/s10854-013-1256-5 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: ZnO/PbS one-dimensional core/shell nanorods have been fabricated by a two-step growth method. Photoluminescence properties of these samples with different shell thickness are studied in detail. The result reveals that the photoluminescence intensity of the ZnO/PbS core/shell nanorods changes with the increase of thickness of PbS shell. When the shell is very thin, the increase in photoluminescence intensity is attributed to the modification of surface defect state. When the shell becomes thicker, the formation of a reverse type-I band alignment between the core and shell is ascribed to be the factor resulting in the decrease in intensity of the photoluminescence properties.

Addresses: [He, Zhaohui] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Meng, Xiuqing] Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua 321004, Peoples R China.

Reprint Address: He, ZH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: zhhe@semi.ac.cn

ISSN: 0957-4522
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Record 132 of 495

Title: Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001)/SiO2 interface

Author(s): Zheng, L (Zheng, Liu); Sun, GS (Sun, Guosheng); Zhang, F (Zhang, Feng); Liu, SB (Liu, Shengbei); Liu, B (Liu, Bin); Dong, L (Dong, Lin); Wang, L (Wang, Lei); Zhao, WS (Zhao, Wanshun); Liu, XF (Liu, Xingfang); Yan, GG (Yan, Guoguo); Tian, LX (Tian, Lixin); Zeng, YP (Zeng, Yiping)

Source: APPLIED SURFACE SCIENCE Volume: 280 Pages: 500-503 DOI: 10.1016/j.apsusc.2013.05.017 Published: SEP 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Formation mechanisms of initial 4H-SiC (0 0 0 1)/SiO2 interface were analyzed by density functional theory (DFT) and angle-dependent X-ray photoelectron spectroscopy (ADXPS). Through the theoretical model calculations, either C or O interstitial is likely to exist in the oxidation process of 4H-SiC. Besides, there is one suboxide theoretically more easily to form and more stable than any others. The results of the ADXPS experiment revealed only one suboxide with shift of +0.94 eV relative to the 4H-SiC bulk component rather than three ones, which verified the theoretical results. These calculation and experimental results demonstrated there is only one rather than three silicon suboxides that induced the high density of states in the 4H-SiC/SiO2 interface. Besides, we did some speculations about the formation mechanism of the initial 4H-SiC/SiO2 interface according to the theoretical and experimental results. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Zheng, Liu; Sun, Guosheng; Zhang, Feng; Liu, Shengbei; Liu, Bin; Dong, Lin; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Zheng, Liu; Sun, Guosheng; Zhang, Feng; Liu, Shengbei; Liu, Bin; Dong, Lin; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

Reprint Address: Zhang, F (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: fzhang@semi.ac.cn

ISSN: 0169-4332
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Record 133 of 495

Title: Multi-point defect single-fundamental-mode photonic crystal vertical cavity surface emitting laser

Author(s): Xie, YY (Xie, Yi-Yang); Xu, C (Xu, Chen); Kan, Q (Kan, Qiang); Wang, CX (Wang, Chun-Xia); Chen, HD (Chen, Hong-Da)

Source: OPTICS AND LASER TECHNOLOGY Volume: 50 Pages: 130-133 DOI: 10.1016/j.optlastec.2013.02.009 Published: SEP 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A seven-point-defect photonic crystal (PhC) vertical cavity surface emitting laser (VCSEL) operating with high single-fundamental-mode of 23 mW and low threshold current of 1.2 mA was demonstrated and its performance was analyzed. The single-fundamental-mode emission aperture (central defect area) was enlarged to achieve high output power. Furthermore, suitable refractive index step due to the photonic crystal structure was obtained to overcome the external index perturbations, which can be attributed to stable single-fundamental-mode operation even at saturation current. The transverse mode confinement characteristics by photonic crystal was analyzed based on the effective index model and showed good agreement with the experiment results. (c) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Xie, Yi-Yang; Xu, Chen] Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China.

[Xie, Yi-Yang; Kan, Qiang; Wang, Chun-Xia; Chen, Hong-Da] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Kan, Q (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: kanqiang@semi.ac.cn

ISSN: 0030-3992
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Record 134 of 495

Title: From the ZnO Hollow Cage Clusters to ZnO Nanoporous Phases: A First-Principles Bottom-Up Prediction

Author(s): Liu, ZF (Liu, Zhifeng); Wang, XG (Wang, Xingiang); Cai, JT (Cai, Jiangtao); Liu, GB (Liu, Gaobin); Zhou, P (Zhou, Ping); Wang, K (Wang, Kan); Zhu, HJ (Zhu, Hengjiang)

Source: JOURNAL OF PHYSICAL CHEMISTRY C Volume: 117 Issue: 34 Pages: 17633-17643 DOI: 10.1021/jp405084r Published: AUG 29 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A family of ZnkOk (k = 12, 16) cluster-assembled solid phases with novel structures and properties has been characterized utilizing a bottom-up approach with density functional calculations. Geometries, stabilities, equation of states, phase transitions, and electronic properties of these ZnO polymorphs have been systematically investigated. First-principles molecular dynamics (FPMD) study of the two selected building blocks, Zn12O12 and Zn16O16, with hollow cage structure and large HOMO-LUMO gap shows that both of them are thermodynamically stable enough to survive up to at least 500 K. Via the coalescence of building blocks, we find that the Zn12O12 cages are able to form eight stable phases by four types of Zn12O12-Zn12O12 interactions, and the Zn16O16 cages can bind into three phases by the Zn16O16-Zn16O16 links of H', C', and S'. Among these phases, six ones are reported for the first time. This has greatly extended the family of ZnO nanoporous phases. Notably, some of these phases are even more stable than the synthesized metastable rocksalt ZnO polymorph. The hollow cage structure of the corresponding building block ZnkOk is well preserved in all of them, which leads to their low-density nanoporous and high flexibility features. In addition the electronic integrity (wide-energy gap) of the individual ZnkOk is also retained. Our calculation reveals that they are all semiconductor with a large direct or indirect band gap. The insights obtained in this work are likely to be general in II-VI semiconductor compounds and will be helpful for extending the range of properties and applications of ZnO materials.

Addresses: [Liu, Zhifeng; Wang, Xingiang; Liu, Gaobin; Zhou, Ping; Wang, Kan] Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China.

[Cai, Jiangtao] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Zhou, Ping] Chongqing Jiaotong Univ, Sch Sci, Chongqing 400074, Peoples R China.

[Zhu, Hengjiang] Xinjiang Normal Univ, Coll Phys & Elect Engn, Urumqi 830054, Peoples R China.

Reprint Address: Liu, ZF (reprint author), Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China.

E-mail Addresses: zfliu8413@cqu.edu.cn; xqwang@cqu.edu.cn

ISSN: 1932-7447
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Record 135 of 495

Title: Generation and evolution of the terahertz vortex beam

Author(s): He, JW (He, Jingwen); Wang, XK (Wang, Xinke); Hu, D (Hu, Dan); Ye, JS (Ye, Jiasheng); Feng, SF (Feng, Shengfei); Kan, Q (Kan, Qiang); Zhang, Y (Zhang, Yan)

Source: OPTICS EXPRESS Volume: 21 Issue: 17 Pages: 20230-20239 DOI: 10.1364/OE.21.020230 Published: AUG 26 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Based on the complementary V-shaped antenna structure, ultrathin vortex phase plates are designed to achieve the terahertz (THz) optical vortices with different topological charges. Utilizing a THz holographic imaging system, the two dimensional complex field information of the generated THz vortex beam with the topological number l = 1 is directly obtained. Its far field propagation properties are analyzed in detail, including the rotation, the twist direction, and the Gouy phase shift of the vortex phase. An analytic Laguerre-Gaussian mode is used to simulate and explain the measured phenomena. The experimental and simulation results overlap each other very well. (C)2013 Optical Society of America

Addresses: [He, Jingwen; Wang, Xinke; Hu, Dan; Ye, Jiasheng; Feng, Shengfei; Zhang, Yan] Capital Normal Univ, Dept Phys, Beijing Key Lab THz Spect & Imaging, Key Lab THz Optoelect,Minist Educ, Beijing 100048, Peoples R China.

[He, Jingwen; Hu, Dan; Zhang, Yan] Harbin Inst Technol, Harbin 150001, Peoples R China.

[Kan, Qiang] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Wang, XK (reprint author), Capital Normal Univ, Dept Phys, Beijing Key Lab THz Spect & Imaging, Key Lab THz Optoelect,Minist Educ, 105 XiSanHuan BeiLu, Beijing 100048, Peoples R China.

E-mail Addresses: wxk82721@gmail.com; yzhang@mail.cnu.edu.cn

ISSN: 1094-4087

Record 136 of 495

Title: Fabrication of volcano-shaped nano-patterned sapphire substrates using colloidal self-assembly and wet chemical etching

Author(s): Geng, C (Geng, Chong); Zheng, L (Zheng, Lu); Fang, HJ (Fang, Huajing); Yan, QF (Yan, Qingfeng); Wei, TB (Wei, Tongbo); Hao, ZB (Hao, Zhibiao); Wang, XQ (Wang, Xiaoqing); Shen, DZ (Shen, Dezhong)

Source: NANOTECHNOLOGY Volume: 24 Issue: 33 Article Number: 335301 DOI: 10.1088/0957-4484/24/33/335301 Published: AUG 23 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Patterned sapphire substrates (PSS) have been widely used to enhance the light output power in GaN-based light emitting diodes. The shape and feature size of the pattern in a PSS affect its enhancement efficiency to a great degree. In this work we demonstrate the nanoscale fabrication of volcano-shaped PSS using a wet chemical etching approach in combination with a colloidal monolayer templating strategy. Detailed analysis by scanning electron microscopy reveals that the unique pattern shape is a result of the different corrosion-resistant abilities of silica masks of different effective heights during wet chemical etching. The formation of silica etching masks of different effective heights has been ascribed to the silica precursor solution in the interstice of the colloidal monolayer template being distributed unevenly after infiltration. In the subsequent wet chemical etching process, the active reaction sites altered as etching duration was prolonged, resulting in the formation of volcano-shaped nano-patterned sapphire substrates.

Addresses: [Geng, Chong; Zheng, Lu; Fang, Huajing; Yan, Qingfeng; Wang, Xiaoqing; Shen, Dezhong] Tsinghua Univ, Dept Chem, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.

[Wei, Tongbo] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Hao, Zhibiao] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China.

Reprint Address: Geng, C (reprint author), Tsinghua Univ, Dept Chem, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.

E-mail Addresses: yanqf@mail.tsinghua.edu.cn

ISSN: 0957-4484

Record 137 of 495

Title: Ag@SiO2 core-shell nanoparticles on silicon nanowire arrays as ultrasensitive and ultrastable substrates for surface-enhanced Raman scattering

Author(s): Zhang, CX (Zhang, Chang Xing); Su, L (Su, Lei); Chan, YF (Chan, Yu Fei); Wu, ZL (Wu, Zheng Long); Zhao, YM (Zhao, Yong Mei); Xu, HJ (Xu, Hai Jun); Sun, XM (Sun, Xiao Ming)