Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Addresses: [Li, Wei; Wang, Li Xian; Zhu, Ning Hua] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Zhu, NH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: nhzhu@semi.ac.cn

ISSN: 1943-0655

Record 150 of 495

Title: Note: Simultaneous measurements of magnetization and electrical transport signal by a reconstructed superconducting quantum interference device magnetometer

Author(s): Wang, HL (Wang, H. L.); Yu, XZ (Yu, X. Z.); Wang, SL (Wang, S. L.); Chen, L (Chen, L.); Zhao, JH (Zhao, J. H.)

Source: REVIEW OF SCIENTIFIC INSTRUMENTS Volume: 84 Issue: 8 Article Number: 086103 DOI: 10.1063/1.4817623 Published: AUG 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We have developed a sample rod which makes the conventional superconducting quantum interference device magnetometer capable of performing magnetization and electrical transport measurements simultaneously. The sample holder attached to the end of a 140 cm long sample rod is a nonmagnetic drinking straw or a 1.5 mm wide silicon strip with small magnetic background signal. Ferromagnetic semiconductor (Ga,Mn) As films are used to test the new sample rod, and the results are in good agreement with previous report. (C) 2013 AIP Publishing LLC.

Addresses: [Wang, H. L.; Yu, X. Z.; Wang, S. L.; Chen, L.; Zhao, J. H.] Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhao, JH (reprint author), Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: jhzhao@red.semi.ac.cn

ISSN: 0034-6748

Record 151 of 495

Title: Fabrication of Low-Density Long-Wavelength InAs Quantum Dots using a Formation-Dissolution-Regrowth Method

Author(s): Zhang, SZ (Zhang Shi-Zhu); Ye, XL (Ye Xiao-Ling); Xu, B (Xu Bo); Liu, SM (Liu Shu-Man); Zhou, WF (Zhou Wen-Fei); Wang, ZG (Wang Zhan-Guo)

Source: CHINESE PHYSICS LETTERS Volume: 30 Issue: 8 Article Number: 087804 DOI: 10.1088/0256-307X/30/8/087804 Published: AUG 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Low-density (similar to 10(9) cm(-2)), long-wavelength (more than 1300 nm at room temperature) InAs/GaAs quantum dots (QDs) with only 1.75-mono-layer (ML) InAs deposition were achieved by using a formation-dissolution-regrowth method. Firstly, small high-density InAs QDs were formed at 490 degrees C, then the substrate temperature was ramped up to 530 degrees C, and another 0.2 ML InAs was added. After this process, the density of the InAs QDs became much lower, and their size became much larger. The full width at half maximum of the photoluminescence peak of the low density, long-wavelength InAs QDs was as small as 27.5 meV.

Addresses: [Zhang Shi-Zhu; Ye Xiao-Ling; Xu Bo; Liu Shu-Man; Zhou Wen-Fei; Wang Zhan-Guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Ye, XL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: xlye@semi.ac.cn

ISSN: 0256-307X

Record 152 of 495

Title: Electrical and Optical Properties of a High-Voltage Large Area Blue Light-Emitting Diode

Author(s): Wang, W (Wang Wei); Cai, Y (Cai Yong); Huang, W (Huang Wei); Li, HO (Li Hai-ou); Zhang, BS (Zhang Bao-shun)

Source: JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 52 Issue: 8 Special Issue: SI Article Number: DOI: 10.7567/JJAP.52.08JG08 Part: 2 Published: AUG 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this paper, we report a single-chip large area (5 x 5mm(2)) InGaN/GaN blue LED with the optical output power of 4.3 W. This device consists of 24-stages small LED-cells that are connected in series. Driven at 500 mA, the forward voltage is measured to be 87.2 V with a reverse current of 2.63 x 10(-9) A at -120 V. The comparison of two different cooling schemes, i.e., with/without fan cooling, was made; the results suggest that the thermal convection between the heat sink and air is more critical. A simple white LED package was also tried by covering silicone gel mixed with yttrium aluminum garnet (YAG) phosphor. The luminous flux and the correlated color temperature (CCT) were measured to be 1090 lm and 5082 K, when the device was driven at 500 mA. This report also demonstrated the feasibility of the application for camera flash. (C) 2013 The Japan Society of Applied Physics

Addresses: [Wang Wei; Cai Yong; Zhang Bao-shun] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Jiangsu, Peoples R China.

[Wang Wei] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang Wei] Univ Chinese Acad Sci, Beijing 100049, Peoples R China.

[Huang Wei; Li Hai-ou] WuXi Jingkai Technol Co Ltd, Wuxi 214061, Jiangsu, Peoples R China.

Reprint Address: Wang, W (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Jiangsu, Peoples R China.

E-mail Addresses: ycai2008@sinano.ac.cn

ISSN: 0021-4922
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Record 153 of 495

Title: A fiber-based implantable multi-optrode array with contiguous optical and electrical sites

Author(s): Chen, SY (Chen, Sanyuan); Pei, WH (Pei, Weihua); Gui, Q (Gui, Qiang); Chen, YF (Chen, Yuanfang); Zhao, SS (Zhao, Shanshan); Wang, H (Wang, Huan); Chen, HD (Chen, Hongda)

Source: JOURNAL OF NEURAL ENGINEERING Volume: 10 Issue: 4 Article Number: 046020 DOI: 10.1088/1741-2560/10/4/046020 Published: AUG 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Objective. Although various kinds of optrodes are designed to deliver light and sense electrophysiological responses, few have a tightly closed optical delivering site or electrical recording site. The large space between them often blurs the stimulation location and light intensity threshold. Approach. Based on an optical fiber, we develop an optrode structure which has a coniform tip where the light exit point and gold-based electrode site are located. The optrode is fabricated by integrating a metal membrane electrode on the outside of a tapered fiber. Half of the cone-shape tip is covered by a layer of gold membrane to form the electrode. A commercial fiber connector, mechanical transfer (MT) module, is chosen to assemble the multi-optrode array (MOA). The MT connector acts as both the holder of the optrode array and an aligning part to connect the MOA with the light source. Main results. We fabricated a pluggable MOA weighing only 0.2 g. The scanning electron microscope images showed a tight cover of the metal layer on the optrode tip with an exposure area of 1500 mu m(2). The electrochemical impedance of the optrode at 1 kHz was 100 k Omega on average and the light emission intensity reached 13 mW. The optical modulating and electrophysiological recording ability of the MOA was validated by monitoring the response of cells in a ChR2-expressing mouse's cerebral cortex. Neurons that maintained high cluster quality (signal-to-noise ratio = 5:1) and coherence in response to trains of 20 Hz stimulation were monitored. Significance. The optrode array reduces the distance between the optical stimulating sites and electrophysiological sites dramatically and can supply multiple channels to guide different lights simultaneously. This optrode with its novel structure may lead to a different kind of optical neural control prosthetic device, opening up a new option for neural modulation in the brain.

Addresses: [Chen, Sanyuan; Pei, Weihua; Gui, Qiang; Chen, Yuanfang; Zhao, Shanshan; Wang, Huan; Chen, Hongda] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Pei, WH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: peiwh@semi.ac.cn

ISSN: 1741-2560

Record 154 of 495

Title: Electronic structure of twisted bilayer graphene

Author(s): Wu, JB (Wu Jiang-Bin); Zhang, X (Zhang Xin); Tan, PH (Tan Ping-Heng); Feng, ZH (Feng Zhi-Hong); Li, J (Li Jia)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 15 Article Number: 157302 DOI: 10.7498/aps.62.157302 Published: AUG 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: This paper uses the first-principles and the tight-binding methods to study the electronic structures of twisted bilayer graphene for different angles. The band structures and density of states of twisted bilayer graphene in different angles are calculated. Our analysis points out that there is a linear dispersion relation in a twisted bilayer graphene, which is similar to a monolayer graphene, and the Fermi velocity of twisted graphene is lower and lower with reducing angle. Furthermore, gaps appearing at M point of certain angles, in which the width of gap depends on the twist angle, this gap would strengthen the Raman mode intensity of twisted bilayer graphene, as was confirmed by experiment. The comparison of moire' patterns and the location of density of states both certify that 'AB region' of moire' patterns is the reason of gap at M point.

Addresses: [Wu Jiang-Bin; Zhang Xin; Tan Ping-Heng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Feng Zhi-Hong; Li Jia] Hebei Semicond Res Inst, Sci & Technol ASIC Lab, Shijiaghuang 050051, Peoples R China.

Reprint Address: Tan, PH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: phtan@semi.ac.cn

ISSN: 1000-3290
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Record 155 of 495

Title: Synthesis of silver quantum dots decorated TiO2 nanotubes and their incorporation in organic hybrid solar cells

Author(s): Tan, FR (Tan, Furui); Qu, SC (Qu, Shengchun); Zhang, XW (Zhang, Xingwang); Liu, K (Liu, Kong); Wang, ZG (Wang, Zhanguo)

Source: JOURNAL OF NANOPARTICLE RESEARCH Volume: 15 Issue: 8 Article Number: DOI: 10.1007/s11051-013-1844-6 Published: AUG 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Uniform silver quantum dots decorated TiO2 nanotubes (Ag-TiO2 NTs) were synthesized via a simple reduction reaction in ethanol solvent. The size distribution of composite NTs arranges from 3 to 5 nm for Ag quantum dots and about 10 nmfor TiO2 NTs in diameter. The composite Ag-TiO2 nanoparticles were incorporated in organic hybrid solar cells through doping into the active layer. Both the optical and electrical properties of the solar cells were improved. The photocurrent and fill factor of the devices were obviously increased after the Ag-TiO2 NTs were introduced, accompanied with a greatly reduced series resistance as well as enlarged shunt resistance. Suppressed recombination due to efficient charge transfer from plasmonic Ag quantum dots to the attached TiO2 NTs made contribution to the charge collection and transportation so that the fill factor was increased. Meanwhile, the enhanced light absorption resulted from effective incident light scattering by the Ag-TiO2 NTs composite played a role in increasing photocurrent. As a result, solar cells with Ag-TiO2 NTs generated an enhanced conversion efficiency up to 20 and 50 % compared to that adopting TiO2 NTs and that without doping, respectively.

Addresses: [Tan, Furui] Hehan Univ, Dept Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Henan, Peoples R China.

[Tan, Furui; Qu, Shengchun; Zhang, Xingwang; Liu, Kong; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Tan, FR (reprint author), Hehan Univ, Dept Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Henan, Peoples R China.

E-mail Addresses: frtan2012@163.com; qsc@semi.ac.cn

ISSN: 1388-0764
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Record 156 of 495

Title: Epitaxial Monolayer MoS2 on Mica with Novel Photoluminescence

Author(s): Ji, QQ (Ji, Qingqing); Zhang, YF (Zhang, Yanfeng); Gao, T (Gao, Teng); Zhang, Y (Zhang, Yu); Ma, DL (Ma, Donglin); Liu, MX (Liu, Mengxi); Chen, YB (Chen, Yubin); Qiao, XF (Qiao, Xiaofen); Tan, PH (Tan, Ping-Heng); Kan, M (Kan, Min); Feng, J (Feng, Ji); Sun, Q (Sun, Qiang); Liu, ZF (Liu, Zhongfan)

Source: NANO LETTERS Volume: 13 Issue: 8 Pages: 3870-3877 DOI: 10.1021/nl401938t Published: AUG 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Molybdenum disulfide (MoS2) is back in the spotlight because of the indirect-to-direct bandgap tunability and valley related physics emerging in the monolayer regime. However, rigorous control of the monolayer thickness is still a huge challenge for commonly utilized physical exfoliation and chemical synthesis methods. Herein, we have successfully grown predominantly monolayer MoS2 on an inert and nearly lattice-matching mica substrate by using a low-pressure chemical vapor deposition method. The growth is proposed to be mediated by an epitaxial mechanism, and the epitaxial monolayer MoS2 is intrinsically strained on mica due to a small adlayer-substrate lattice mismatch (similar to 2.7%). Photoluminescence (PL) measurements indicate strong single-exciton emission in as-grown MoS2 and room-temperature PL helicity (circular polarization similar to 0.35) on transferred samples, providing straightforward proof of the high quality of the prepared monolayer crystals. The homogeneously strained high-quality monolayer MoS2 prepared in this study could competitively be exploited for a variety of future applications.

Addresses: [Ji, Qingqing; Zhang, Yanfeng; Gao, Teng; Zhang, Yu; Ma, Donglin; Liu, Mengxi; Chen, Yubin; Liu, Zhongfan] Peking Univ, Acad Adv Interdisciplinary Studies, Coll Chem & Mol Engn, Ctr Nanochem CNC,Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China.

[Zhang, Yanfeng; Zhang, Yu; Kan, Min; Sun, Qiang] Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China.

[Qiao, Xiaofen; Tan, Ping-Heng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Feng, Ji] Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China.

[Sun, Qiang] Peking Univ, Ctr Appl Phys & Technol, Beijing 100871, Peoples R China.

Reprint Address: Zhang, YF (reprint author), Peking Univ, Acad Adv Interdisciplinary Studies, Coll Chem & Mol Engn, Ctr Nanochem CNC,Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China.

E-mail Addresses: yanfengzhang@pku.edu.cn; zfliu@pku.edu.cn

ISSN: 1530-6984

Record 157 of 495

Title: Elastic properties of VO2 from first-principles calculation

Author(s): Dong, HF (Dong, Huafeng); Liu, HF (Liu, Hongfei)

Source: SOLID STATE COMMUNICATIONS Volume: 167 Pages: 1-4 DOI: 10.1016/j.ssc.2013.05.011 Published: AUG 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We used first-principles methods to calculate the elastic properties of rutile (R) structure and monoclinic (M-1: space group P2(1)/c, M-2: space group C2/m) structure VO2, including single-crystal elastic constants c(ij)'s, polycrystalline bulk modulus, shear modulus, Young's modulus and elastic anisotropy ratio. We found that the energy difference among the R, M-1 and M-2 phases is small, indicating that it is easy to transit among them under a perturbation. Furthermore, from the pressure dependence of c(ij)'s, we also found that the structural instability (or phase transition) will occur when the volumes of the three phases are slightly smaller than their equilibrium volumes. Additionally, the R and M-2 phases are predicted to be harder than the M-1 phase, indicated by their larger bulk moduli and shear moduli. The elastic anisotropy of the M-2 phase is larger than the M-1 and R phases. The presently predicted elastic properties of VO2 provide helpful guidance for the strain energy estimation and stress analysis in nano-electronic devices. Crown Copyright (C) 2013 Published by Elsevier Ltd. All rights reserved.

Addresses: [Dong, Huafeng] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

[Dong, Huafeng; Liu, Hongfei] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Dong, HF (reprint author), Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

E-mail Addresses: hfdong@semi.ac.cn

ISSN: 0038-1098
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Record 158 of 495

Title: Numerical analysis on quantum dots-in-a-well structures by finite difference method

Author(s): Gong, L (Gong Liang); Shu, YC (Shu Yong-chun); Xu, JJ (Xu Jing-jun); Zhu, QS (Zhu Qin-sheng); Wang, ZG (Wang Zhan-guo)

Source: SUPERLATTICES AND MICROSTRUCTURES Volume: 60 Pages: 311-319 DOI: 10.1016/j.spmi.2013.05.012 Published: AUG 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A finite difference technology is applied to the InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) structures in order to determine their electronic properties. Conventional quantum dots (QDs) sample has a simple structure, i.e., the QDs are imbedded in a GaAs bulk medium. In stead of the conventional structure, we prefer the weak confinement DWELL structure because it can efficiently lower the intersubband transition energy. Thus the DWELL detector is expected to make the longer wavelength detection possible. Present method used in this study is demonstrated to be efficient and flexible for determining the electronic state of the DWELL system. However, to our knowledge there has been no literature reporting so far on the electronic structure of DWELL characterized by the finite difference method. (C) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Gong Liang; Shu Yong-chun; Xu Jing-jun] Nankai Univ, Minist Educ, Key Lab Adv Tech & Fabricat Weak Light Nonlinear, Tianjin 300457, Peoples R China.

[Zhu Qin-sheng; Wang Zhan-guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Gong, L (reprint author), Nankai Univ, Minist Educ, Key Lab Adv Tech & Fabricat Weak Light Nonlinear, Tianjin 300457, Peoples R China.

E-mail Addresses: gongliang@mail.nankai.edu.cn

ISSN: 0749-6036
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Record 159 of 495

Title: Design of electro-absorption modulator with tapered-mode coupler on the GeSi layer

Author(s): Li, Y (Li, Ym); Cheng, B (Cheng, Bw)

Source: JOURNAL OF OPTICS Volume: 15 Issue: 8 Article Number: 085501 DOI: 10.1088/2040-8978/15/8/085501 Published: AUG 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A tapered-mode coupler integrated GeSi electro-absorption (EA) modulator is investigated theoretically. To improve the parameter insensitivity and modulation efficiency of the GeSi EA modulator based on evanescent coupling, a tapered coupler on the GeSi layer is introduced in our design. The two coupling mechanisms in our suggested structure are compared. Both the beam propagation method (BPM) calculation and coupling mode theory show almost 100% power transfer from the bottom rib waveguide to the GeSi layer. After a series of designs of the tapered coupler, we get a modulator with the advantages of both evanescent-coupling modulators (Feng et al 2011 Opt. Express 19 7062-7, Feng et al 2012 Opt. Express 20 22224-32, Liu et al 2008 Nature Photon. 2 433-7, Liu et al 2007 Opt. Express 15 623-8) and butt-coupling modulators (Lim et al 2011 Opt. Express 19 5040-6), that are ease of fabrication, low coupling loss, performance stability and high modulation efficiency.

Addresses: [Li, Ym; Cheng, Bw] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 10083, Peoples R China.

Reprint Address: Li, Y (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 10083, Peoples R China.

E-mail Addresses: ymli@semi.ac.cn; cbw@red.semi.ac.cn

ISSN: 2040-8978

Record 160 of 495

Title: Performance analysis of vertical multi-junction solar cell with front surface diffusion for high concentration

Author(s): Xing, YP (Xing, Yupeng); Han, PD (Han, Peide); Wang, S (Wang, Shuai); Fan, YJ (Fan, Yujie); Liang, P (Liang, Peng); Ye, Z (Ye, Zhou); Li, XY (Li, Xinyi); Hu, SX (Hu, Shaoxu); Lou, SS (Lou, Shishu); Zhao, CH (Zhao, Chunhua); Mi, YH (Mi, Yanhong)

Source: SOLAR ENERGY Volume: 94 Pages: 8-18 DOI: 10.1016/j.solener.2013.04.030 Published: AUG 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: The vertical multi-junction (VMJ) solar cell has good potential applications in high concentration photovoltaic. The efficiency of VMJ cell reached to 19.19% under 2480 suns has been reported. Numerical calculations show that the efficiency can reach close to 30% after optimization. In this work, the performance of the silicon VMJ cell with front surface diffusion working under 1 sun and 1000 suns was calculated numerically using a TCAD software. The front surface diffusion can reduce the requirement of high quality front surface passivation, but increases the series resistance. The effect of the N-type emitter dopant profile, P+-type back surface field dopant profile, width, thickness, bulk doping concentration and lifetime of the sub-cell on the performance of the VMJ cell with front surface diffusion was calculated and analyzed. The efficiency reached to 30.56% under 1000 suns after optimization. (C) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Xing, Yupeng; Han, Peide; Wang, Shuai; Fan, Yujie; Liang, Peng; Ye, Zhou; Li, Xinyi; Hu, Shaoxu; Lou, Shishu; Zhao, Chunhua; Mi, Yanhong] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Xing, YP (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: xingyupeng@semi.ac.cn

ISSN: 0038-092X

Record 161 of 495

Title: Highly Efficient Coupling Between Inner and Surface Fields in Photonic Crystal Waveguides

Author(s): Yu, TB (Yu, Tianbao); Li, SZ (Li, Sizhong); Liu, NH (Liu, Nianhua); Wang, TB (Wang, Tongbiao); Liao, QH (Liao, Qinghua); Xu, XM (Xu, Xuming)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 25 Issue: 15 Pages: 1496-1499 DOI: 10.1109/LPT.2013.2269998 Published: AUG 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Connecting inner and surface propagation field in photonic crystal waveguides (PCWs) with an efficient method is critical to achieve flexible designs and applications in photonic integrated circuits. This letter realizes highly efficient coupling between inner and surface PCWs by modifying the structures of waveguides and interface. The aim of the modification is to achieve a good match of modal field profiles between different types of waveguide structures as well as suppress the reflected field at the interface. The numerical results based on finite-difference time-domain simulations show that the bandwidth for coupling efficiency larger than 90% can be as broad as over 100 nm.