Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Addresses: [Burla, Maurizio; Cortes, Luis Romero; Azana, Jose] INRS EMT, Varennes, PQ J3X 1S2, Canada.

[Li, Ming] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Wang, Xu; Chrostowski, Lukas] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V6T 1Z4, Canada.

Reprint Address: Burla, M (reprint author), INRS EMT, 1650 Blvd Lionel Boulet, Varennes, PQ J3X 1S2, Canada.

E-mail Addresses: maurizio.burla@gmail.com; azana@emt.inrs.ca

ISSN: 1094-4087

Record 51 of 495

Title: Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced light-extraction of light-emitting diodes

Author(s): Du, CX (Du, Chengxiao); Wei, TB (Wei, Tongbo); Zheng, HY (Zheng, Haiyang); Wang, LC (Wang, Liancheng); Geng, C (Geng, Chong); Yan, QF (Yan, Qingfeng); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin)

Source: OPTICS EXPRESS Volume: 21 Issue: 21 Pages: 25373-25380 DOI: 10.1364/OE.21.025373 Published: OCT 21 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Size-controllable p-GaN hexagonal nanopyramids (HnPs)-photonic crystal (PhC) structures were selectively grown on flat p-GaN layer for the elimination of total internal reflection of light-emitting diodes (LEDs). The LEDs with HnPs-PhC of 46.3% bottom fill factor (PhC lattice constant is 730 nm) showed an improved light output power by 99.9% at forward current of 350 mA compared to the reference LEDs with flat p-GaN layer. We confirmed the effect of HnPs-PhC with different bottom fill factors and the effect of nanopyramid-shaped and nanocolumn-shaped PhC on the light-extraction of LEDs was also investigated by using three-dimensional finite-difference time-domain simulations. (C) 2013 Optical Society of America

Addresses: [Du, Chengxiao; Wei, Tongbo; Zheng, Haiyang; Wang, Liancheng; Wang, Junxi; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

[Geng, Chong; Yan, Qingfeng] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Dept Chem, Beijing 100084, Peoples R China.

Reprint Address: Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: tbwei@semi.ac.cn

ISSN: 1094-4087
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Record 52 of 495

Title: Triangular-range-intensity profile spatial-correlation method for 3D super-resolution range-gated imaging

Author(s): Wang, XW (Wang Xinwei); Li, YF (Li Youfu); Zhou, Y (Zhou Yan)

Source: APPLIED OPTICS Volume: 52 Issue: 30 Pages: 7399-7406 DOI: 10.1364/AO.52.007399 Published: OCT 20 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We present a triangular-range-intensity profile (RIP) spatial-correlation method for 3D range-gated imaging with a depth of super resolution. In this method, spatial sampling volumes with triangular-RIPs are established by matching laser-pulse width and sensor gate time, and then depth information collapsed in gate images can be reconstructed by spatial correlation of overlapped gate images corresponding to sampling volumes. Compared with super-resolution depth mapping under trapezoidal-RIPs, range accuracy and precision are improved, and a large range fluctuation due to noise disturbance is smoothed by noise suppression under triangular-RIPs. In this paper, a proof experiment is demonstrated with a range precision 2.5 times better than that obtained under trapezoidal-RIPs. (C) 2013 Optical Society of America

Addresses: [Wang Xinwei; Zhou Yan] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

[Wang Xinwei; Li Youfu] City Univ Hong Kong, Dept Mech & Biomed Engn, Hong Kong, Hong Kong, Peoples R China.

Reprint Address: Li, YF (reprint author), City Univ Hong Kong, Dept Mech & Biomed Engn, Hong Kong, Hong Kong, Peoples R China.

E-mail Addresses: meyfli@cityu.edu.hk

ISSN: 1559-128X
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Record 53 of 495

Title: Nanotetrapods: quantum dot hybrid for bulk heterojunction solar cells

Author(s): Tan, FR (Tan, Furui); Qu, SC (Qu, Shengchun); Li, FM (Li, Fumin); Jiang, QW (Jiang, Qiwei); Chen, C (Chen, Chong); Zhang, WF (Zhang, Weifeng); Wang, ZG (Wang, Zhanguo)

Source: NANOSCALE RESEARCH LETTERS Volume: 8 Article Number: 434 DOI: 10.1186/1556-276X-8-434 Published: OCT 19 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Hybrid thin film solar cell based on all-inorganic nanoparticles is a new member in the family of photovoltaic devices. In this work, a novel and performance-efficient inorganic hybrid nanostructure with continuous charge transportation and collection channels is demonstrated by introducing CdTe nanotetropods (NTs) and CdSe quantum dots (QDs). Hybrid morphology is characterized, demonstrating an interpenetration and compacted contact of NTs and QDs. Electrical measurements show enhanced charge transfer at the hybrid bulk heterojunction interface of NTs and QDs after ligand exchange which accordingly improves the performance of solar cells. Photovoltaic and light response tests exhibit a combined optic-electric contribution from both CdTe NTs and CdSe QDs through a formation of interpercolation in morphology as well as a type II energy level distribution. The NT and QD hybrid bulk heterojunction is applicable and promising in other highly efficient photovoltaic materials such as PbS QDs.

Addresses: [Tan, Furui; Li, Fumin; Jiang, Qiwei; Chen, Chong; Zhang, Weifeng] Henan Univ, Dept Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Henan, Peoples R China.

[Qu, Shengchun; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Qu, SC (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: qsc@semi.ac.cn

ISSN: 1931-7573
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Record 54 of 495

Title: Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field

Author(s): Yue, Q (Yue, Qu); Shao, ZZ (Shao, Zhengzheng); Chang, SL (Chang, Shengli); Li, JB (Li, Jingbo)

Source: NANOSCALE RESEARCH LETTERS Volume: 8 Article Number: 425 DOI: 10.1186/1556-276X-8-425 Published: OCT 17 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Using first-principles calculations, we investigate the adsorption of various gas molecules (H-2, O-2, H2O, NH3, NO, NO2, and CO) on monolayer MoS2. The most stable adsorption configuration, adsorption energy, and charge transfer are obtained. It is shown that all the molecules are weakly adsorbed on the monolayer MoS2 surface and act as charge acceptors for the monolayer, except NH3 which is found to be a charge donor. Furthermore, we show that charge transfer between the adsorbed molecule and MoS2 can be significantly modulated by a perpendicular electric field. Our theoretical results are consistent with the recent experiments and suggest MoS2 as a potential material for gas sensing application.

Addresses: [Yue, Qu; Shao, Zhengzheng; Chang, Shengli] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China.

[Li, Jingbo] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Li, JB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: jbli@semi.ac.cn

ISSN: 1931-7573
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Record 55 of 495

Title: Compact and low-loss silicon power splitter based on inverse tapers

Author(s): Li, XY (Li, Xianyao); Xu, H (Xu, Hao); Xiao, X (Xiao, Xi); Li, ZY (Li, Zhiyong); Yu, JZ (Yu, Jinzhong); Yu, YD (Yu, Yude)

Source: OPTICS LETTERS Volume: 38 Issue: 20 Pages: 4220-4223 DOI: 10.1364/OL.38.004220 Published: OCT 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A compact, low-loss, optical power splitter based on inverse tapers is proposed and fabricated on a silicon-on-insulator platform. High efficiency mode evolution between the fundamental mode of the input waveguide and the super mode of the output waveguides is realized using optimized tapers. A 1 x 4 splitter with insertion loss lower than 0.4 dB and uniformity better than 0.68 dB in a wavelength range from 1510 to 1550 nm are demonstrated within a footprint of only similar to 75 mu m(2). These properties are very promising for ultrahigh density photonic integration applications. (C) 2013 Optical Society of America

Addresses: [Li, Xianyao; Xu, Hao; Xiao, Xi; Li, Zhiyong; Yu, Jinzhong; Yu, Yude] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Yu, YD (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: yudeyu@semi.ac.cn

ISSN: 0146-9592

Record 56 of 495

Title: Nonequilibrium. Shot Noise Spectrum Through a Quantum Dot in the Kon.do Regime: A Master Equation Approach under Self-Consistent Born Approximation

Author(s): Liu, Y (Liu Yu); Jin, JS (Jin Jin-Shuang); Li, J (Li Jun); Li, XQ (Li Xin-Qi); Yan, YJ (Yan Yi-Jing)

Source: COMMUNICATIONS IN THEORETICAL PHYSICS Volume: 60 Issue: 4 Pages: 503-509 Published: OCT 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We construct a number(n)-resolved master equation (ME) approach under self-consistent Born approximation (SCBA) for noise spectrum calculation. The formulation is essentially non-Markovian and incorporates properly the interlay of the multi-tunneling processes and many-body correlations. We apply this approach to the challenging none quilibrium Kondo system and predict a profound nonequilibriurn Kondo signature in the shot noise spectrum. The proposed n-SCBA-ME scheme goes completely beyond the scope of the Born-Markovian master equation approach, in the sense of being applicable to the shot noise of transport under small bias voltage, in non-Markovian regime, and with strong Coulomb correlations as favorably demonstrated in the none quilibrium Kondo system.

Addresses: [Liu Yu; Li Xin-Qi] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Jin Jin-Shuang] Hangzhou Normal Univ, Dept Phys, Hangzhou 310036, Zhejiang, Peoples R China.

[Li Jun] Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China.

[Li Xin-Qi] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China.

[Yan Yi-Jing] Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China.

[Li Jun] Dezhou Univ, Coll Phys & Elect Engn, Dezhou 253023, Peoples R China.

Reprint Address: Liu, Y (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: jsjin@hznu.edu.cn; lixinqi@bnu.edu.cn

ISSN: 0253-6102
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Record 57 of 495

Title: Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness

Author(s): Le, LC (Le, L. C.); Zhao, DG (Zhao, D. G.); Jiang, DS (Jiang, D. S.); Li, L (Li, L.); Wu, LL (Wu, L. L.); Chen, P (Chen, P.); Liu, ZS (Liu, Z. S.); Yang, J (Yang, J.); Li, XJ (Li, X. J.); He, XG (He, X. G.); Zhu, JJ (Zhu, J. J.); Wang, H (Wang, H.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, H.)

Source: JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 14 Article Number: 143706 DOI: 10.1063/1.4824801 Published: OCT 14 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The effect of quantum barrier (QB) thickness on performances of InGaN/GaN multiple-quantum-well light-emitting diodes (MQW LEDs) with relatively large barrier layer thicknesses has been investigated. It is found that the density and averaged size of V-defects increases with QB thickness, resulting in larger reverse-and forward-bias current in LEDs. Electroluminescence measurement shows that LED with thinner QB has higher internal quantum efficiency but lower efficiency droop-onset current density, which should be ascribed to the faster saturation of carrier leakage into V-defects. Correspondingly, above the droop-onset current density, severer Auger recombination and carrier overflow are induced by higher carrier density due to the less V-defect related carrier leakage, leading to the more serious droop phenomenon in LEDs with thinner QB. (C) 2013 AIP Publishing LLC.

Addresses: [Le, L. C.; Zhao, D. G.; Jiang, D. S.; Li, L.; Wu, L. L.; Chen, P.; Liu, Z. S.; Yang, J.; Li, X. J.; He, X. G.; Yang, H.] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Zhu, J. J.; Wang, H.; Zhang, S. M.; Yang, H.] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China.

Reprint Address: Zhao, DG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: dgzhao@red.semi.ac.cn

ISSN: 0021-8979
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Record 58 of 495

Title: Interface-Induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells

Author(s): Zhang, D (Zhang, Dong); Lou, WK (Lou, Wenkai); Miao, MS (Miao, Maosheng); Zhang, SC (Zhang, Shou-cheng); Chang, K (Chang, Kai)

Source: PHYSICAL REVIEW LETTERS Volume: 111 Issue: 15 Article Number: 156402 DOI: 10.1103/PhysRevLett.111.156402 Published: OCT 11 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We demonstrate theoretically that interface engineering can drive germanium, one of the most commonly used semiconductors, into a topological insulating phase. Utilizing giant electric fields generated by charge accumulation at GaAs/Ge/GaAs opposite semiconductor interfaces and band folding, the new design can reduce the sizable gap in Ge and induce large spin-orbit interaction, which leads to a topological insulator transition. Our work provides a new method to realize topological insulators in commonly used semiconductors and suggests a promising approach to integrate it in well-developed semiconductor electronic devices.

Addresses: [Zhang, Dong; Lou, Wenkai; Chang, Kai] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

[Miao, Maosheng] Univ Calif Santa Barbara, Mat Res Lab, Santa Barbara, CA 93106 USA.

[Miao, Maosheng] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA.

[Zhang, Shou-cheng] Stanford Univ, Dept Phys, Stanford, CA 94305 USA.

[Chang, Kai] Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China.

Reprint Address: Chang, K (reprint author), Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: kchang@semi.ac.cn

ISSN: 0031-9007

Record 59 of 495

Title: Small linewidth and short lifetime of emission from GaAs/AlAs core/shell quantum dots on the facet of GaAs nanowire

Author(s): Shang, XJ (Shang, Xiangjun); Yu, Y (Yu, Ying); Zha, GW (Zha, Guowei); Li, MF (Li, Mifeng); Wang, LJ (Wang, Lijuan); Xu, JX (Xu, Jianxing); Ni, HQ (Ni, Haiqiao); Niu, ZC (Niu, Zhichuan)

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 46 Issue: 40 Article Number: 405102 DOI: 10.1088/0022-3727/46/40/405102 Published: OCT 9 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Inspired by the novel quantum dot (QD) structure, GaAs/AlAs core/shell QD on the facet of GaAs/AlGaAs nanowire (NW), and its nice single-photon emission properties in Heiss et al's work (2013 Nature Mater. 12 439), a mechanism of wavefunction resonance in QD, induced by the AlAs shell surrounding QD, is proposed and proved by Schrodinger equation simulation. The thin AlAs shell between GaAs NW and QD, acting as a tunnelling barrier, determines QD emission linewidth. A 3 nm thick AlAs shell gives a linewidth of 35 mu eV. QD emission efficiency and lifetime are studied by rate equations. The parallel decay channel along continuous GaAs NW band, in rate of Gamma(R), reduces QD emission lifetime. For Gamma(R) = 1 x 10(9) s(-1) and 3 nm thick AlAs shell, the lifetime is 680 ps. The AlAs shell thickness shows opposite influences on QD spectral linewidth and emission efficiency, and thus must be traded off.

Addresses: [Shang, Xiangjun; Yu, Ying; Zha, Guowei; Li, Mifeng; Wang, Lijuan; Xu, Jianxing; Ni, Haiqiao; Niu, Zhichuan] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Shang, XJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: xjshang@semi.ac.cn; zcniu@semi.ac.cn

ISSN: 0022-3727

Record 60 of 495

Title: Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth

Author(s): Li, ZC (Li, Zengcheng); Liu, JP (Liu, Jianping); Feng, MX (Feng, Meixin); Zhou, K (Zhou, Kun); Zhang, SM (Zhang, Shuming); Wang, H (Wang, Hui); Li, DY (Li, Deyao); Zhang, LQ (Zhang, Liqun); Zhao, DG (Zhao, Degang); Jiang, DS (Jiang, Desheng); Wang, HB (Wang, Huaibing); Yang, H (Yang, Hui)

Source: APPLIED PHYSICS LETTERS Volume: 103 Issue: 15 Article Number: 152109 DOI: 10.1063/1.4824850 Published: OCT 7 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Local InGaN quantum well (QW) decomposition and resultant inhomogeneous luminescence in green laser diode (LD) epitaxial structures are investigated using micro-photoluminescence, Z-contrast scanning transmission electron microscopy, and high-resolution transmission electron microscopy. The local InGaN QW decomposition is found to happen during p-type layer growth due to too high thermal budget and may initiate at the InGaN/GaN QW upper interface probably due to the formation of In-rich InGaN clusters there. Reducing thermal budget and optimizing InGaN/GaN QW growth suppress the local InGaN QW decomposition, and green LD structures with homogeneous luminescence and bright electroluminescence (EL) intensity are obtained. (C) 2013 AIP Publishing LLC.

Addresses: [Li, Zengcheng; Feng, Meixin; Zhou, Kun; Zhao, Degang; Jiang, Desheng; Yang, Hui] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Li, Zengcheng; Liu, Jianping; Feng, Meixin; Zhou, Kun; Zhang, Shuming; Wang, Hui; Li, Deyao; Zhang, Liqun; Wang, Huaibing; Yang, Hui] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

[Li, Zengcheng; Liu, Jianping; Feng, Meixin; Zhou, Kun; Zhang, Shuming; Wang, Hui; Li, Deyao; Zhang, Liqun; Wang, Huaibing; Yang, Hui] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

Reprint Address: Liu, JP (reprint author), SIP, SEID, 398 Ruoshui Rd, Suzhou 215123, Peoples R China.

E-mail Addresses: jpliu2010@sinano.ac.cn

ISSN: 0003-6951

Record 61 of 495

Title: Magnetic and Gilbert damping properties of L-21-Co2FeAl film grown by molecular beam epitaxy

Author(s): Qiao, S (Qiao, Shuang); Nie, SH (Nie, Shuaihua); Zhao, JH (Zhao, Jianhua); Huo, Y (Huo, Yan); Wu, YZ (Wu, Yizheng); Zhang, XH (Zhang, Xinhui)

Source: APPLIED PHYSICS LETTERS Volume: 103 Issue: 15 Article Number: 152402 DOI: 10.1063/1.4824654 Published: OCT 7 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Co2FeAl film with L-21 structure was prepared. Its magnetic and Gilbert damping properties were studied by ferromagnetic resonance (FMR) and time-resolved magneto-optical Kerr effect (TR-MOKE), respectively. It is observed that the apparent damping parameter decreases drastically with increasing magnetic field at low field regime and eventually becomes a constant value of 0.004 at high field regime by TR-MOKE measurements. A Gilbert damping parameter of 0.008 in the hard axis by FMR measurement has also been obtained, which is comparable with that extracted from TR-MOKE measurements at low external field, indicating the extrinsic damping processes involved in the low field regime. (C) 2013 AIP Publishing LLC.

Addresses: [Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Huo, Yan; Wu, Yizheng] Fudan Univ, Dept Phys, State Key Lab Surface Phys, Shanghai 200433, Peoples R China.

[Huo, Yan; Wu, Yizheng] Fudan Univ, Adv Mat Lab, Shanghai 200433, Peoples R China.

Reprint Address: Zhang, XH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: xinhuiz@semi.ac.cn

ISSN: 0003-6951

Record 62 of 495

Title: N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array

Author(s): Wang, LC (Wang, Liancheng); Ma, J (Ma, Jun); Liu, ZQ (Liu, Zhiqiang); Yi, XY (Yi, Xiaoyan); Yuan, GD (Yuan, Guodong); Wang, GH (Wang, Guohong)

Source: JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 13 Article Number: 133101 DOI: 10.1063/1.4823849 Published: OCT 7 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: N-polar GaN etching process and mechanism has been investigated in detail by varying the etching parameter (etchant temperature, etchant concentration, and etching duration) in KOH and H3PO4. Quasi-perfect micro-scale hexagonal pyramids vertical light emitting diodes (mu-HP VLEDs) array with least active area loss (<12%) has been fabricated by N-polar etching. The mu-HP VLEDs shows massively improved crystal quality with X-ray diffraction full width at half maxima decreased from 442 s to 273 s, and the room temperature minority carriers decay time increased from 252 ps to 747 ps. Temperature dependence of photoluminescence result reveals a similar to 30% improved internal quantum efficiency, and transmission electron microscope further reveals its quasi-perfect crystalline quality clearly. (C) 2013 AIP Publishing LLC.

Addresses: [Wang, Liancheng; Ma, Jun; Liu, Zhiqiang; Yi, Xiaoyan; Yuan, Guodong; Wang, Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

[Wang, Liancheng] Nanyang Technol Univ, Sch Elect & Elect Engn, Luminous Ctr Excellence Semicond Lighting & Displ, Singapore 639798, Singapore.

Reprint Address: Wang, LC (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.