Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Source: SCIENCE CHINA-TECHNOLOGICAL SCIENCES Volume: 56 Issue: 11 Pages: 2798-2807 DOI: 10.1007/s11431-013-5378-z Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The silicon vertical multi-junction (VMJ) solar cell has a good potential in high concentration, but it requires high quality front and back surface passivation layers to keep its high efficiency. We try to add dopants into the front and back surfaces of the VMJ cell to release this strict requirement in this work. The effects of recombination velocities, doping types and doping profiles of front and back surfaces on the performance of the P-type VMJ cell were calculated under 1 sun and 1000 suns. The 2D numerical simulation tool TCAD software was used. The performance of the VMJ cell without front and back surface dopants was also calculated for comparison. It was found that the requirement of high quality front and back surface passivation layers could be released remarkably by adding either N-type or P+-type front and back surface dopants. For the two types of front surface dopants, the highest efficiencies of the cells were got by light dopant; for the two types of back surface dopants, the doping type and profile affected little on the performance of the cell in our calculation range. It was also found that the series resistance of the VMJ cell with N-type front surface dopant was decreased by the 2D effect of front surface emitter. The VMJ cell with P+-type front surface dopant had the highest efficiency under 1000 suns and the VMJ cell with N-type front surface dopant had the highest efficiency under 1 sun in our calculation range.

Addresses: [Xing YuPeng; Han PeiDe; Wang Shuai; Liang Peng; Lou ShiShu; Zhang YuanBo; Hu ShaoXu; Zhu HuiShi; Mi YanHong; Zhao ChunHua] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Xing, YP (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: xingyupeng@semi.ac.cn

ISSN: 1674-7321

Record 40 of 495

Title: A compact neural recording interface based on silicon microelectrode

Author(s): Han, JQ (Han JianQiang); Zhang, X (Zhang Xu); Pei, WH (Pei WeiHua); Gui, Q (Gui Qiang); Liu, M (Liu Ming); Chen, HD (Chen HongDa)

Source: SCIENCE CHINA-TECHNOLOGICAL SCIENCES Volume: 56 Issue: 11 Pages: 2808-2813 DOI: 10.1007/s11431-013-5359-2 Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A prototype of hybrid neural recording interface has been developed for extracellular neural recording. It consists of a silicon-based plane microelectrode array and a CMOS low noise neural amplifier chip. The neural amplifier chip is designed and implemented in 0.18 mu m N-well CMOS 1P6M technology. The area of the neural preamplifier is only 0.042 mm(2) with a gain of 48.3 dB. The input equivalent noise is 4.73 mu Vrms within pass bands of 4 kHz. To avoid cable tethering for high dense multichannel neural recording interface and make it compact, flip-chip bonding is used to integrate the preamplifier chip and the microelectrode together. The hybrid device measures 3 mmx5.5 mmx330 mu m, which is convenient for implant or in-vivo neural recording. The hybrid device was testified in in-vivo experiment. Neural signals were recorded from hippocampus region of anesthetized Sprague Dawley rats successfully.

Addresses: [Han JianQiang; Zhang Xu; Pei WeiHua; Gui Qiang; Liu Ming; Chen HongDa] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Zhang, X (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: zhangxu@semi.ac.cn

ISSN: 1674-7321

Record 41 of 495

Title: All-Metal Optical Fiber Accelerometer With Low Transverse Sensitivity for Seismic Monitoring

Author(s): Jiang, DS (Jiang, Dongshan); Zhang, WT (Zhang, Wentao); Li, F (Li, Fang)

Source: IEEE SENSORS JOURNAL Volume: 13 Issue: 11 Pages: 4556-4560 DOI: 10.1109/JSEN.2013.2270554 Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: An all-metal double metal diaphragm-based optical fiber accelerometer with low transverse sensitivity is proposed and experimentally demonstrated. The theoretical analysis is given based on the electro-mechanical theory. Finite element modal analysis shows that the proposed accelerometer has low transverse sensitivity. Calibration results show that axis responsivity is 41 dB (re: 0 dB = 1 rad/g) with a fluctuation +/-2 dB in frequency bandwidth of 5-400 Hz. The transverse sensitivity is similar to 3 dB (re: 0 dB = 1 rad/g) with a fluctuation +/-1.5 dB. A transverse sensitivity of about -40 dB is achieved. The fluctuation of the acceleration responsivity for the three accelerometers is within +/-2.5 dB, which shows good consistency of the proposed accelerometer. The minimum phase demodulation detection accuracy of the phase-generated carrier is 10(-5) rad/Hz(1/2), and the minimum detectable acceleration can be 90 ng/Hz(1/2) theoretically. With an all-metal structure, the proposed accelerometer is expected to improve the reliability of long-term use in harsh environment. These desirable features show that the proposed optical fiber accelerometer is promising for seismic wave monitoring in oil and gas exploration.

Addresses: [Jiang, Dongshan; Zhang, Wentao; Li, Fang] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

Reprint Address: Jiang, DS (reprint author), Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

E-mail Addresses: zhangwt@semi.ac.cn

ISSN: 1530-437X

Record 42 of 495

Title: Low-threshold, high SMSR tunable external cavity quantum cascade laser around 4.7 mu m

Author(s): Tan, S (Tan, S.); Zhang, JC (Zhang, J. C.); Zhuo, N (Zhuo, N.); Wang, LJ (Wang, L. J.); Liu, FQ (Liu, F. Q.); Yao, DY (Yao, D. Y.); Liu, JQ (Liu, J. Q.); Wang, ZG (Wang, Z. G.)

Source: OPTICAL AND QUANTUM ELECTRONICS Volume: 45 Issue: 11 Pages: 1147-1155 DOI: 10.1007/s11082-013-9731-z Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Room-temperature pulsed and continuous-wave (cw) operation of a tunable external cavity (EC) quantum cascade laser (QCL) at an emitting wavelength of was presented. The effect of different external cavity lengths and grating angles of the EC-QCL system were analyzed numerically. A wide tuning range greater than was obtained in pulsed mode at room temperature. Without the anti-reflection coating procedure, single-mode cw operation with a side-mode suppression ratio (SMSR) above 20 dB and a wide tuning range greater than were achieved. Near the center region, SMSR about 30 dB was also realized through designing the external cavity length. Strain-compensation combined with two-phonon resonance in an active region design and the high-reflection coating promised low threshold current density. A record low threshold current density of for an EC-QCL operated in cw mode was realized.

Addresses: [Tan, S.; Zhang, J. C.; Zhuo, N.; Wang, L. J.; Liu, F. Q.; Yao, D. Y.; Liu, J. Q.; Wang, Z. G.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Tan, S.] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.

Reprint Address: Wang, LJ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: ts870222@semi.ac.cn; ljwang@semi.ac.cn; fqliu@red.semi.ac.cn

ISSN: 0306-8919
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Record 43 of 495

Title: Ohmic contact to n-type Ge with compositional Ti nitride

Author(s): Wu, HD (Wu, H. D.); Huang, W (Huang, W.); Lu, WF (Lu, W. F.); Tang, RF (Tang, R. F.); Li, C (Li, C.); Lai, HK (Lai, H. K.); Chen, SY (Chen, S. Y.); Xue, CL (Xue, C. L.)

Source: APPLIED SURFACE SCIENCE Volume: 284 Pages: 877-880 DOI: 10.1016/j.apsusc.2013.08.028 Published: NOV 1 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Fermi-Level pinning at Ge surface results in high Schottky barrier height (SBH) for nearly all metal/n-Ge contacts. By varying composition of the TiNx, modulation of the SBH was demonstrated for TiNx/n-Ge contact. The effective SBH of the TiN0.1/n-Ge Schottky contact was found decreased to 0.45 eV, as compared to the Ti/n-Ge contact SBH which was originally pinned at 0.56 eV. Ohmic contact to n-type Ge was realized by increasing the nitrogen composition to x = 0.8 in TiNx. Dipoles formed by the difference of the Pauling electronegativities for Ge and N at the contact interface is proposed to alleviate the Fermi-Level pinning effect. (C) 2013 Elsevier B. V. All rights reserved.

Addresses: [Wu, H. D.; Huang, W.; Lu, W. F.; Tang, R. F.; Li, C.; Lai, H. K.; Chen, S. Y.] Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China.

[Xue, C. L.] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Huang, W (reprint author), Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China.

E-mail Addresses: weihuang@xmu.edu.cn; lich@xmu.edu.cn

ISSN: 0169-4332
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Record 44 of 495

Title: Ag-assisted lateral etching of Si nanowires and its application to nanowire transfer

Author(s): Li, CB (Li, Chuanbo); Fobelets, K (Fobelets, Kristel); Liu, C (Liu, Chang); Xue, CL (Xue, Chunlai); Cheng, BW (Cheng, Buwen); Wang, QM (Wang, Qiming)

Source: APPLIED PHYSICS LETTERS Volume: 103 Issue: 18 Article Number: 183102 DOI: 10.1063/1.4826930 Published: OCT 28 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Ag-assisted anisotropic lateral etching along the < 100 > directions in Si nanowire arrays (Si NWAs) is investigated. It is found that Ag ions, generated by H2O2 oxidation of Ag particles, re-nucleate on the sidewalls of the nanowires, causing side etching and tapering of the wires. By enhancing the side etching effect, fractures can be formed at specific positions along the nanowires. This technique is applied to transfer large-area Si NWAs onto a glass substrate. (C) 2013 AIP Publishing LLC.

Addresses: [Li, Chuanbo; Xue, Chunlai; Cheng, Buwen; Wang, Qiming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Fobelets, Kristel; Liu, Chang] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7 2AZ, England.

Reprint Address: Li, CB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: cbli@semi.ac.cn

ISSN: 0003-6951
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Record 45 of 495

Title: Efficiency enhancement of polymer solar cells by localized surface plasmon of Au nanoparticles

Author(s): Gao, HL (Gao, H. L.); Zhang, XW (Zhang, X. W.); Yin, ZG (Yin, Z. G.); Zhang, SG (Zhang, S. G.); Meng, JH (Meng, J. H.); Liu, X (Liu, X.)

Source: JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 16 Article Number: 163102 DOI: 10.1063/1.4827181 Published: OCT 28 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We demonstrate the improvement of power conversion efficiency (PCE) in bulk heterojunction polymer solar cells based on blended poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester by introducing 40 nm Au nanoparticles (NPs) with various concentrations. The Au NPs were deposited on indium-tin-oxide (ITO) substrates by spin-coating from colloidal solution prior to deposition of poly (3,4-ethylene dioxythiophene: poly (styrene sulfonate) (PEDOT:PSS) buffer layer. It has been found that both short-circuit current density and PCE increase after incorporating Au NPs between ITO and PEDOT: PSS layer, and a suitable area density of Au NPs is required to achieve a maximum enhancement of device efficiency. The PCE of solar cells has been increased from 3.50% to 3.81% with 0.9wt.% Au NPs. The PCE enhancement is attributed to the localized surface plasmon excitation of Au NPs. The method employed herein is a kind of simple and convenient solution process, and it has great potential in future practical applications. (C) 2013 AIP Publishing LLC.

Addresses: [Gao, H. L.; Zhang, X. W.; Yin, Z. G.; Zhang, S. G.; Meng, J. H.; Liu, X.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Zhang, XW (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: xwzhang@semi.ac.cn

ISSN: 0021-8979

Record 46 of 495

Title: Modeling an antenna-coupled graphene field-effect terahertz detector

Author(s): Tan, RB (Tan, Ren-Bing); Qin, H (Qin, Hua); Sun, JD (Sun, Jian-Dong); Zhang, XY (Zhang, Xiao-Yu); Zhang, BS (Zhang, Bao-Shun)

Source: APPLIED PHYSICS LETTERS Volume: 103 Issue: 17 Article Number: DOI: 10.1063/1.4826118 Published: OCT 21 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The effect of ambipolar carriers on terahertz self-mixing is theoretically investigated in an antenna-coupled graphene field-effect terahertz (GFET) detector by taking into account the spatial distributions of the charge carriers and the terahertz field. The model predicts that the charge and field distributions can be tuned by the gate voltage so that they match up with each other and enhance the photocurrent. Such a cooperative self-mixing does not occur in unipolar FET detectors. A GFET detector with a moderate carrier mobility could offer current responsivity of a few A/W and noise-equivalent power below 50 pW/root Hz at room temperature. (C) 2013 AIP Publishing LLC.

Addresses: [Tan, Ren-Bing; Qin, Hua; Sun, Jian-Dong; Zhang, Xiao-Yu; Zhang, Bao-Shun] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

[Tan, Ren-Bing] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Tan, Ren-Bing] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China.

Reprint Address: Qin, H (reprint author), Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.

E-mail Addresses: hqin2007@sinano.ac.cn

ISSN: 0003-6951

Record 47 of 495

Title: Tunable density of two-dimensional electron gas in GaN-based heterostructures: The effects of buffer acceptor and channel width

Author(s): Peng, EC (Peng, Enchao); Wang, XL (Wang, Xiaoliang); Xiao, HL (Xiao, Hongling); Wang, CM (Wang, Cuimei); Yin, HB (Yin, Haibo); Chen, H (Chen, Hong); Feng, C (Feng, Chun); Jiang, LJ (Jiang, Lijuan); Qu, SQ (Qu, Shenqi); Kang, H (Kang, He); Hou, X (Hou, Xun); Wang, ZG (Wang, Zhanguo)

Source: JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 15 Article Number: 154507 DOI: 10.1063/1.4825318 Published: OCT 21 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: This is a theoretical study of GaN-based heterostructures with unintentionally doped (UID) GaN channel layer and high-resistivity (HR) GaN buffer layer doped by deep acceptors. Self-consistent Schrodinger-Poisson (SP) numerical simulation shows that, by increasing the acceptor concentration in the HR buffer or narrowing the width of UID channel, the quantum confinement of two-dimensional electron gas (2DEG) is enhanced, while the sheet density of 2DEG is reduced. The tuning effect of 2DEG density is attributed to the depletion effect of negative space charges composed of ionized acceptors located in the region between the UID channel and the Fermi-level pinned region in the HR buffer. For the heterostructure without the UID channel, the 2DEG can be depleted as the acceptor concentration is beyond a critical value. However, by inserting a UID channel layer, the depletion effect of buffer acceptor on 2DEG density is reduced. To gain a further insight into the physics, a simple analytical model is developed, which reproduces well the results of SP simulation. By comparing our theoretical results with the experimental ones, a good agreement is reached, thus the validity of our model is verified. (C) 2013 AIP Publishing LLC.

Addresses: [Peng, Enchao; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Qu, Shenqi; Kang, He] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Wang, Xiaoliang; Wang, Zhanguo] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing, Peoples R China.

[Wang, Xiaoliang; Hou, Xun] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China.

Reprint Address: Wang, XL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: xlwang@semi.ac.cn

ISSN: 0021-8979

Record 48 of 495

Title: Theoretical study of transport property in InAsSb quantum well heterostructures

Author(s): Zhang, YW (Zhang, Yuwei); Zhang, Y (Zhang, Yang); Guan, M (Guan, Min); Cui, LJ (Cui, Lijie); Wang, CY (Wang, Chengyan); Zeng, YP (Zeng, Yiping)

Source: JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 15 Article Number: 153707 DOI: 10.1063/1.4826071 Published: OCT 21 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Theoretical studies of transport properties in InAsSb-based quantum well heterostructures are presented. The concentration of two-dimensional electron gas is calculated self-consistently from our improved Schrodinger-Poisson model by taking into account of nonparabolicity effect and strain effect, and the results are used to obtain the electron mobility. All major scattering mechanisms by acoustic phonon, polar optical phonon, remote ionized impurity, background impurity, interface roughness, and alloy disorder have been included in our calculation. Particularly, dislocation scattering, intrasubband scattering, and intersubband scattering, which are always neglected in heterostructure systems, are considered. The calculated electron mobility is proved to be in good agreement with the experimental data for modulation-doped AlSb/InAsSb quantum well heterostructures. With a view to optimize the transport property, quantum well width, spacer thickness, barrier thickness, and remote doping concentration for AlSb/InAsSb heterostructures are discussed to examine their effect on total electron mobility. Intrinsic electron mobility exceeding 40 000 cm(2)/Vs is predicted at 300 K for AlSb/InAs0.4Sb0.6 heterostructures which is dominated by a combination of polar optical phonon scattering, remote ionized impurity scattering, and interface roughness scattering. (C) 2013 AIP Publishing LLC.

Addresses: [Zhang, Yuwei; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Chengyan; Zeng, Yiping] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Zhang, Y (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: terahertzantenna@163.com

ISSN: 0021-8979

Record 49 of 495

Title: Optical investigation of strong exciton localization in high Al composition AlxGa1-xN alloys

Author(s): Fan, SF (Fan, Shunfei); Qin, ZX (Qin, Zhixin); He, CG (He, Chenguang); Hou, MJ (Hou, Mengjun); Wang, XQ (Wang, Xinqiang); Shen, B (Shen, Bo); Li, W (Li, Wei); Wang, WY (Wang, Weiying); Mao, DF (Mao, Defeng); Jin, P (Jin, Peng); Yan, JC (Yan, Jianchang); Dong, P (Dong, Peng)

Source: OPTICS EXPRESS Volume: 21 Issue: 21 Pages: 24497-24503 DOI: 10.1364/OE.21.024497 Published: OCT 21 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The exciton localization in wurtzite AlxGa1-xN alloys with x varying from 0.41 to 0.63 has been studied by deep-ultraviolet photoluminescence (PL) spectroscopy and picosecond time-resolved PL spectroscopy. Obvious S-shape temperature dependence was observed indicating that the strong exciton localization can be formed in high Al composition AlxGa1-xN alloys. It was also found that the Al composition dependence of exciton localization energy of AlGaN alloys is inconsistent with that of the excitonic linewidth. We contribute the inconsistency to the strong zero-dimensional exciton localization. (C) 2013 Optical Society of America

Addresses: [Fan, Shunfei; Qin, Zhixin; He, Chenguang; Hou, Mengjun; Wang, Xinqiang; Shen, Bo] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China.

[Li, Wei; Wang, Weiying; Mao, Defeng; Jin, Peng] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

[Yan, Jianchang; Dong, Peng] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

Reprint Address: Qin, ZX (reprint author), Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China.

E-mail Addresses: zxqin@pku.edu.cn

ISSN: 1094-4087

Record 50 of 495

Title: Integrated waveguide Bragg gratings for microwave photonics signal processing

Author(s): Burla, M (Burla, Maurizio); Cortes, LR (Cortes, Luis Romero); Li, M (Li, Ming); Wang, X (Wang, Xu); Chrostowski, L (Chrostowski, Lukas); Azana, J (Azana, Jose)

Source: OPTICS EXPRESS Volume: 21 Issue: 21 Pages: 25120-25147 DOI: 10.1364/OE.21.025120 Published: OCT 21 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Integrated Microwave photonics (IMWP) signal processing using Photonic Integrated Circuits (PICs) has attracted a great deal of attention in recent years as an enabling technology for a number of functionalities not attainable by purely microwave solutions. In this context, integrated waveguide Bragg grating (WBG) devices constitute a particularly attractive approach thanks to their compactness and flexibility in producing arbitrarily defined amplitude and phase responses, by directly acting on coupling coefficient and perturbations of the grating profile. In this article, we review recent advances in the field of integrated WBGs applied to MWP, analyzing the advantages leveraged by an integrated realization. We provide a perspective on the exciting possibilities offered by the silicon photonics platform in the field of MWP, potentially enabling integration of highly-complex active and passive functionalities with high yield on a single chip, with a particular focus on the use of WBGs as basic building blocks for linear filtering operations. We demonstrate the versatility of WBG-based devices by proposing and experimentally demonstrating a novel, continuously-tunable, integrated true-time-delay (TTD) line based on a very simple dual phase-shifted WBG (DPS-WBG). (C) 2013 Optical Society of America