Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Addresses: [Li Chong; Xue Chun-Lai; Li Chuan-Bo; Liu Zhi; Cheng Bu-Wen; Wang Qi-Ming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Xue, CL (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: clxue@semi.ac.cn

ISSN: 1674-1056

Record 27 of 495

Title: Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate

Author(s): Liu, Z (Liu Zhi); Cheng, BW (Cheng Bu-Wen); Li, YM (Li Ya-Ming); Li, CB (Li Chuan-Bo); Xue, CL (Xue Chun-Lai); Wang, QM (Wang Qi-Ming)

Source: CHINESE PHYSICS B Volume: 22 Issue: 11 Article Number: 116804 DOI: 10.1088/1674-1056/22/11/116804 Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Tensile strain, crystal quality, and surface morphology of 500 nm thick Ge films were improved after rapid thermal annealing at 900 degrees C for a short period (< 20 s). The films were grown on Si(001) substrates by ultra-high vacuum chemical vapor deposition. These improvements are attributed to relaxation and defect annihilation in the Ge films. However, after prolonged (> 20 s) rapid thermal annealing, tensile strain and crystal quality degenerated. This phenomenon results from intensive Si-Ge mixing at high temperature.

Addresses: [Liu Zhi; Cheng Bu-Wen; Li Ya-Ming; Li Chuan-Bo; Xue Chun-Lai; Wang Qi-Ming] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Cheng, BW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: cbw@semi.ac.cn

ISSN: 1674-1056

Record 28 of 495

Title: Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

Author(s): Tan, RB (Tan Ren-Bing); Qin, H (Qin Hua); Zhang, XY (Zhang Xiao-Yu); Xu, W (Xu Wen)

Source: CHINESE PHYSICS B Volume: 22 Issue: 11 Article Number: 117306 DOI: 10.1088/1674-1056/22/11/117306 Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs). By introducing a drifted Fermi-Dirac distribution, we calculate the transport properties of the 2DEG in the AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation. Then, the nonequilibrium Fermi-Dirac function is obtained by applying the calculated electron drift velocity and electron temperature. Under random phase approximation (RPA), the electric field driven plasmon dispersion is investigated. The calculated results indicate that the plasmon frequency is dominated by both the electric field E and the angle between wavevector q and electric field E. Importantly, the plasmon frequency could be tuned by the applied source-drain bias voltage besides the gate voltage (change of the electron density).

Addresses: [Tan Ren-Bing; Qin Hua; Zhang Xiao-Yu] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

[Tan Ren-Bing] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Tan Ren-Bing] Univ Chinese Acad Sci, Beijing 100049, Peoples R China.

[Xu Wen] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China.

Reprint Address: Qin, H (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.

E-mail Addresses: hqin2007@sinano.ac.cn

ISSN: 1674-1056
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Record 29 of 495

Title: High-speed and broad optical bandwidth silicon modulator

Author(s): Xu, H (Xu Hao); Li, XY (Li Xian-Yao); Xiao, X (Xiao Xi); Li, ZY (Li Zhi-Yong); Yu, YD (Yu Yu-De); Yu, JZ (Yu Jin-Zhong)

Source: CHINESE PHYSICS B Volume: 22 Issue: 11 Article Number: 114212 DOI: 10.1088/1674-1056/22/11/114212 Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A high-speed silicon modulator with broad optical bandwidth is proposed based on a symmetrically configured Mach-Zehnder interferometer. Careful phase bias control and traveling-wave design are used to improve the high-speed performance. Over a broadband wavelength range, high-speed operation up to 30 Gbit/s with a 4.5 dB-5.5 dB extinction ratio is experimentally demonstrated with a low driving voltage of 3 V.

Addresses: [Xu Hao; Li Xian-Yao; Xiao Xi; Li Zhi-Yong; Yu Yu-De; Yu Jin-Zhong] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Yu, YD (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: yudeyu@semi.ac.cn

ISSN: 1674-1056

Record 30 of 495

Title: Thermoelectric transport through a quantum dot with a magnetic impurity

Author(s): Yu, Z (Yu Zhen); Guo, Y (Guo Yu); Zheng, J (Zheng Jun); Chi, F (Chi Feng)

Source: CHINESE PHYSICS B Volume: 22 Issue: 11 Article Number: 117303 DOI: 10.1088/1674-1056/22/11/117303 Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: We study the thermoelectric effect in a small quantum dot with a magnetic impurity in the Coulomb blockade regime. The electrical conductance, thermal conductance, thermopower, and the thermoelectrical figure of merit (FOM) are calculated by using Green's function method. It is found that the peaks in the electrical conductance are split by the exchange coupling between the electron entering into the dot and the magnetic impurity inside the dot, accompanied by the decrease in the height of peaks. As a result, the resonances in the thermoelectric quantities, such as the thermal conductance, thermopower, and the FOM, are all split, opening some effective new working regions. Despite of the significant reduction in the height of the electrical conductance peaks induced by the exchange coupling, the values of the FOM and the thermopower can be as large as those in the case of zero exchange coupling. We also find that the thermoelectric efficiency, characterized by the magnitude of the FOM, can be enhanced by adjusting the left-right asymmetry of the electrode-dot coupling or by optimizing the system's temperature.

Addresses: [Yu Zhen; Zheng Jun] Bohai Univ, Coll Engn, Jinzhou 121013, Peoples R China.

[Guo Yu; Chi Feng] Bohai Univ, Sch Math & Phys, Jinzhou 121013, Peoples R China.

[Zheng Jun] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Chi, F (reprint author), Bohai Univ, Sch Math & Phys, Jinzhou 121013, Peoples R China.

E-mail Addresses: chifeng@semi.ac.cn

ISSN: 1674-1056

Record 31 of 495

Title: Recent progress in perpendicularly magnetized Mn-based binary alloy films

Author(s): Zhu, LJ (Zhu Li-Jun); Nie, SH (Nie Shuai-Hua); Zhao, JH (Zhao Jian-Hua)

Source: CHINESE PHYSICS B Volume: 22 Issue: 11 Article Number: 118505 DOI: 10.1088/1674-1056/22/11/118505 Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this article, we review the recent progress in growth, structural characterizations, magnetic properties, and related spintronic devices of tetragonal MnxGa and MnxAl thin films with perpendicular magnetic anisotropy. First, we present a brief introduction to the demands for perpendicularly magnetized materials in spintronics, magnetic recording, and permanent magnets applications, and the most promising candidates of tetragonal MnxGa and MnxAl with strong perpendicular magnetic anisotropy. Then, we focus on the recent progress of perpendicularly magnetized MnxGa and MnxAl respectively, including their lattice structures, bulk synthesis, epitaxial growth, structural characterizations, magnetic and other spin-dependent properties, and spintronic devices like magnetic tunneling junctions, spin valves, and spin injectors into semiconductors. Finally, we give a summary and a perspective of these perpendicularly magnetized Mn-based binary alloy films for future applications.

Addresses: [Zhu Li-Jun; Nie Shuai-Hua; Zhao Jian-Hua] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Zhao, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

E-mail Addresses: jhzhao@red.semi.ac.cn

ISSN: 1674-1056

Record 32 of 495

Title: Uni-traveling-carrier double heterojunction phototransistor photodetector

Author(s): Huo, WJ (Huo Wen-Juan); Xie, HY (Xie Hong-Yun); Liang, S (Liang Song); Zhang, WR (Zhang Wan-Rong); Jiang, ZY (Jiang Zhi-Yun); Chen, X (Chen Xiang); Lu, D (Lu Dong)

Source: ACTA PHYSICA SINICA Volume: 62 Issue: 22 Article Number: 228501 DOI: 10.7498/aps.62.228501 Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: An InP/InGaAsP uni-traveling-carrier double heterojunction phototransistor (UTC-DHPT) photodetector is simulated and analyzed in a two-dimensional (2D) model utilizing a numerical device simulator (Atlas). The effects of device structure parameters on operational performance, such as responsivity and characteristic frequency, are studied in detail. Simulation results indicate that the UTC-DHPT can ease the contradiction between detection efficiency and working speed, which exists in traditional heterojun-ction phototransistor and achieve both high responsivity (>= 17.93 A/W) and high characteristic frequency (>= 121.68 GHz) simultaneously.

Addresses: [Huo Wen-Juan; Xie Hong-Yun; Zhang Wan-Rong; Jiang Zhi-Yun; Chen Xiang; Lu Dong] Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China.

[Huo Wen-Juan; Liang Song] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Huo, WJ (reprint author), Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China.

E-mail Addresses: huowenjuan@semi.ac.cn

ISSN: 1000-3290
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Record 33 of 495

Title: Adsorption and diffusion of Pb(II) on the kaolinite(001) surface: A density-functional theory study

Author(s): He, MC (He, Man-Chao); Zhao, J (Zhao, Jian); Wang, SX (Wang, Shuang-Xi)

Source: APPLIED CLAY SCIENCE Volume: 85 Pages: 74-79 DOI: 10.1016/j.clay.2013.08.045 Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The adsorption and diffusion of Pb(II) atom on the hydroxylated (001) surface of kaolinite were investigated using density-functional theory within the generalized gradient approximation and a supercell approach. The coverage dependence of the adsorption structures and energetics was systematically studied for a wide range of coverage Theta [from 0.11 to 1.0 monolayers (ML)] and adsorption sites. The most stable among all possible adsorption sites was the two-fold bridge site followed by the one-fold top site, and the adsorption energy increased with the coverage, thus indicating the higher stability of surface adsorption and a tendency to the formation of Pb(II) islands (clusters) with increasing coverage. Moreover, the energy barrier for diffusion of Pb(II) atom between the one-fold top and the two-fold bridge adsorption sites on kaolinite(001) surface was 0.23 (0.31) eV, implying that the Pb(II) atom is prone to diffusing on kaolinite(001) surface. The other properties of the Pb(II)/kaolinite(001) system including the different charge distribution, the lattice relaxation, and the electronic density of states were also studied and discussed in detail. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [He, Man-Chao; Zhao, Jian] China Univ Min & Technol, State Key Lab Geomech & Deep Underground Engn, Beijing 100083, Peoples R China.

[Wang, Shuang-Xi] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Zhao, J (reprint author), China Univ Min & Technol, State Key Lab Geomech & Deep Underground Engn, Beijing 100083, Peoples R China.

E-mail Addresses: zhaojian0209@aliyun.com

ISSN: 0169-1317
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Record 34 of 495

Title: Electronic Structural Moire Pattern Effects on MoS2/MoSe2 2D Heterostructures

Author(s): Kang, J (Kang, Jun); Li, JB (Li, Jingbo); Li, SS (Li, Shu-Shen); Xia, JB (Xia, Jian-Bai); Wang, LW (Wang, Lin-Wang)

Source: NANO LETTERS Volume: 13 Issue: 11 Pages: 5485-5490 DOI: 10.1021/nl4030648 Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The structural and electronic properties of MoS2/MoSe2 bilayers are calculated using first-principles methods. It is found that the interlayer van der Waals interaction is not strong enough to form a lattice-matched coherent heterostructure. Instead, a nanometer-scale Moire pattern structure will be formed. By analyzing the electronic structures of different stacking configurations, we predict that the valence-band maximum (VBM) state will come from the Gamma point due to interlayer electronic coupling. This is confirmed by a direct calculation of a Moire pattern supercell containing 6630 atoms using the linear scaling three-dimensional fragment method. The VBM state is found to be strongly localized, while the conduction band minimum (CBM) state is only weakly localized, and it comes from the MoS2 layer at the K point. We predict such wave function localization can be a general feature for many two-dimensional (2D) van der Waals heterostructures and can have major impacts on the carrier mobility and other electronic and optical properties.

Addresses: [Kang, Jun; Li, Jingbo; Li, Shu-Shen; Xia, Jian-Bai] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Kang, Jun; Wang, Lin-Wang] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.

Reprint Address: Wang, LW (reprint author), Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.

E-mail Addresses: lwwang@lbl.gov

ISSN: 1530-6984
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Record 35 of 495

Title: Poly(3,4-ethylenedioxythiophene) (PEDOT) as interface material for improving electrochemical performance of microneedles array-based dry electrode

Author(s): Chen, YF (Chen, Yuanfang); Pei, WH (Pei, Weihua); Chen, SY (Chen, Sanyuan); Wu, X (Wu, Xian); Zhao, SS (Zhao, Shanshan); Wang, H (Wang, Huan); Chen, HD (Chen, Hongda)

Source: SENSORS AND ACTUATORS B-CHEMICAL Volume: 188 Pages: 747-756 DOI: 10.1016/j.snb.2013.07.075 Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: As a promising alternative for conventional wet electrode made from silver/silver chloride (Ag/AgCl), micro-needles array (MNA)-based dry electrode has gained extensive attention. The low contact impedance between the MNA-based dry electrode and skin interfaces is pivotal for the acquisition of high quality biopotential, especially for long-term monitoring. In this report, we study, for the first time, the use of organic conductive polymer poly(3,4-ethylenedioxythiophene) (PEDOT) as the interface material of MNA-based dry electrode to improve its electrochemical performance. The interface performance of PEDOT coated dry electrode was characterized by electrochemical impedance spectroscopy and cyclic voltammetry. The mean impedance magnitudes (measured from skin) of PEDOT dry electrode are around 7.5 +/- 3.2K Omega at 2 Hz and 2.7 +/- 1.2K Omega at 100 Hz, while the values are 274.2 +/- 54.6K Omega and 31.8 +/- 9.6K Omega for gold dry electrode, and 547.1 +/- 374.2K Omega and 79.9 +/- 10.3K Omega for commercial electroencephalography (EEG) wet electrode. The charge storage capacity (measured on rat skin sample) of PEDOT and gold was 461.48 mu C and 1.8296 mu C, respectively. These improvements provided by PEDOT interface material can significantly contribute to MNA-based dry electrode for recording or electrostimulation. Compared with commercial EEG wet electrode, similar biopotential signals can be acquired with our PEDOT-coated MNA-based dry electrodes. (C) 2013 Published by Elsevier B.V.

Addresses: [Chen, Yuanfang; Pei, Weihua; Chen, Sanyuan; Wu, Xian; Zhao, Shanshan; Wang, Huan; Chen, Hongda] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Pei, WH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: peiwh@semi.ac.cn

ISSN: 0925-4005

Record 36 of 495

Title: High-Power Distributed Feedback Terahertz Quantum Cascade Lasers

Author(s): Wang, T (Wang, Tao); Liu, JQ (Liu, Jun-Qi); Li, YF (Li, Yan-Fang); Chen, JY (Chen, Jian-Yan); Liu, FQ (Liu, Feng-Qi); Wang, LJ (Wang, Li-Jun); Zhang, JC (Zhang, Jin-Chuan); Wang, ZG (Wang, Zhan-Guo)

Source: IEEE ELECTRON DEVICE LETTERS Volume: 34 Issue: 11 Pages: 1412-1414 DOI: 10.1109/LED.2013.2280713 Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Single-mode operation of distributed feedback (DFB) terahertz quantum cascade lasers based on metal-stripe surface grating structure is reported. Strong DFB coupling and low waveguide loss conditions are obtained while maintaining a high laser output power. A record high edge-emitting optical power of 57 mW, similar to 96.2 mu m at 10 K together with a well-shaped far-field pattern is presented. Reliable dynamic single-mode emission at all injection currents and operating temperatures is realized with a side-mode suppression ratio >17 dB.

Addresses: [Wang, Tao; Liu, Jun-Qi; Li, Yan-Fang; Chen, Jian-Yan; Liu, Feng-Qi; Wang, Li-Jun; Zhang, Jin-Chuan; Wang, Zhan-Guo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Wang, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: jqliu@semi.ac.cn; fqliu@red.semi.ac.cn

ISSN: 0741-3106

Record 37 of 495

Title: Sodium Titanate Nanorod Moisture Sensor and Its Sensing Mechanism

Author(s): Zhang, YP (Zhang, Yupeng); Zhang, Y (Zhang, Ying); Fu, B (Fu, Bo); Li, W (Li, Wei); Guo, WB (Guo, Wenbin); Ruan, SP (Ruan, Shengping); Liu, DL (Liu, Dali); Chen, Y (Chen, Yu)

Source: IEEE ELECTRON DEVICE LETTERS Volume: 34 Issue: 11 Pages: 1424-1426 DOI: 10.1109/LED.2013.2282832 Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Sodium titanate Na2Ti6O13 nanorods were synthesized by a hydrothermal method and characterized by X-ray diffraction and scanning electron microscopy. Then, the material was coated on a Al2O3 ceramic substrate to fabricate humidity sensors using Ag-Pd as interdigitated electrodes. The sensor shows high humidity sensitivity and fast response and recovery. The impedance changes by five orders of magnitude over a relative humidity (RH) range from 11% to 95%. At the frequency of 100 Hz, response and recovery times are both <2 s, and the maximum hysteresis is <3% RH. In addition, the complex impedance at different RH was investigated to understand the sensing mechanism. The results indicate potential applications of sodium titanate for fabricating high-performance humidity sensors.

Addresses: [Zhang, Yupeng; Zhang, Ying; Fu, Bo; Li, Wei; Guo, Wenbin; Ruan, Shengping; Liu, Dali; Chen, Yu] Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China.

[Zhang, Yupeng; Zhang, Ying; Fu, Bo; Li, Wei; Guo, Wenbin; Ruan, Shengping; Liu, Dali; Chen, Yu] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Zhang, YP (reprint author), Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China.

E-mail Addresses: guowb@jlu.edu.cn

ISSN: 0741-3106
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Record 38 of 495

Title: Effect of the thickness of Bi2Se3 sheets on the morphologies of Bi2Se3-ZnS nanocomposites and improved photoresponsive characteristic

Author(s): Li, RX (Li, Renxiong); Wang, ML (Wang, Meili); Meng, XQ (Meng, Xiuqing); Wei, ZM (Wei, Zhongming)

Source: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Volume: 24 Issue: 11 Pages: 4197-4203 DOI: 10.1007/s10854-013-1383-z Published: NOV 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Bi2Se3-ZnS nanocomposites were synthesized with different morphologies and their photoluminescence were investigated. The compounds formed hexagonal rods as the thickness of Bi2Se3 sheets stayed about a few nanometers; while the Bi2Se3 sheets' thickness increased to tens of nanometers, the compounds formed novel morphologies of Bi2Se3-ZnS nanocomposites with small ZnS nanoparticles randomly decorated onto Bi2Se3 sheets. The formation mechanism was proposed based on the different thickness of Bi2Se3 sheets used in experimental processes. In addition, the significant fluorescence quench and obvious improvement in photoresponsive characteristic were shown after the integration of ZnS with Bi2Se3 sheets, which showed potential application in optoelectronic devices.

Addresses: [Li, Renxiong; Wei, Zhongming] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Wang, Meili] BOE Technol Grp Co Ltd, Large Size AMOLED Project, BP Team, Ctr Technol, Beijing, Peoples R China.

[Meng, Xiuqing] Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua 321004, Peoples R China.

[Wei, Zhongming] Univ Copenhagen, Dept Chem, Nanosci Ctr, DK-2100 Copenhagen O, Denmark.

Reprint Address: Li, RX (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: renxiongli@semi.ac.cn; zmwei@semi.ac.cn

ISSN: 0957-4522
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Record 39 of 495

Title: Analysis of effects of front and back surface dopants on silicon vertical multi-junction solar cell by 2D numerical simulation

Author(s): Xing, YP (Xing YuPeng); Han, PD (Han PeiDe); Wang, S (Wang Shuai); Liang, P (Liang Peng); Lou, SS (Lou ShiShu); Zhang, YB (Zhang YuanBo); Hu, SX (Hu ShaoXu); Zhu, HS (Zhu HuiShi); Mi, YH (Mi YanHong); Zhao, CH (Zhao ChunHua)