Semester 1 08O101 calculus and its applications 3 2 0 4 basic concepts
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08O024 COMPUTATIONAL MATERIALS SCIENCE3 0 0 3 INTRODUCTION: Introduction: Simulation as a tool for materials science, Modelling of Natural phenomena – Types of models: Quantum mechanical, atomistic, mesoscopic, continuum – Multiscale approaches. (7) ELEMENTS OF DIFFERENTIAL EQUATIONS: Differential equations in discrete and contnum simulation methods – Ordinary differential equations for particle dynamics, partial differential equations, condition / diffusion equation. (6) EMPIRICAL METHODS AND COARSE GRAINING: Introduction - Reduction to classical potentials – polar systems, Vander Waals potential, potential for covalent bonds , Embedded-atom potential. The Connolly – Williams, approximation – Lattice gas model, Connolly Williams approximation; Potential renormalization. Basic idea; Two step renormalization scheme. The first step, second step and applications to Si. (8) MONTE CARLO METHODS: Introduction to probability and statistics – Basics of the Monte Carlo method – Stochastic processes, Markov process and Ergodicity. Algorithms for Monte Carlo simulation – Random Numbers, simple sampling technique, importance of sampling technique, General comments on dynamic models. Applications to systems of classical particles, modified Monte Carlo techniques, percolation and polymer systems. (8) APPLICATIONS OF MANTE-CARLO: Ramdom walk, self-avioding walk. Classical spin system- Ising model, Nucleation, crystal growth, Fractal system. (6) QUANTUM MONTE CARLO (QMC) METHODS: Introduction - Variational Monte Carlo methods, Diffusion Monte Carlo method, path integral Monte Carlo method, Quantum spin models and other Quantum Monte Carlo methods. (7) Total 42 REFERENCES: 1. Richard Catlow and Eugene Kotomin, “Computational Materials Science”, IOS Press, 2003. 2. Meyer M and Pontikis V, “Computer Simulation in Material Science: Inter Atomic Potentials, Simulation Techniques and Applications”, Kluwer, Academic Press, 2002. 3. Ohno K, Esfarjani K and Kawazoe Y, “Introduction to Computational Materials Science from AB inito to Montecarlo Methods”, Springer- Verlag, 1999. 4. Frenkel D and Smith B, “Understanding Molecular Simulation from Algorithm to Applications”, Kluwer, Academic press, 1999. 5. Rabbe D, “Computational Materials Science: The Simulation of Materials Microstructure and Properties”, Wiley-VCH, 1998. 08O025 QUANTUM MECHANICS 3 0 0 3 THE PHYSICAL BASIS OF QUANTUM MECHANICS: Experimental background – the uncertainty principle – wave packets. Schroedinger wave equation, time dependent and time independent equations, interpretation of the wave function and its normalisation, probability current density, expectation values of dynamical variables, operators corresponding to dynamical variables and their postulates – eigen functions and eigen values of operators. (8) VECTOR SPACES AND LINEAR OPERATORS: Representation of operators by matrix-adjoint of an operator – Hermitian operator, unitary operator, similarity transformation, Dirac’s Bra and Ket notation. Heisenberg’s representation of equation of motion. Matrix theory of Harmonic Oscillator. (7) HYDROGEN ATOM: Schrodinger equation for Hydrogen like atoms and its solution (rigorous derivation is not included). Discussions of energy eigen values, the hydrogen orbitals and quantum numbers. (5) ANGULAR MOMENTUM: Orbital angular momentum, spin angular momentum operators and their properties with eigen values and eigen functions. (5) APPROXIMATION METHODS: Perturbation method – time independent perturbation of non-degenerate and degenerate cases. First order correction, applications. Stark effect and Zeeman effect of Hydrogen atom – harmonic oscillator, helium atom. (7) VARIATION METHOD: Principles of the variation method for ground state with proof. Application of variation method to He atom. Other simple examples. (4) TIME DEPENDENT PERTURBATION THEORY: First order correction – interaction between electromagnetic wave and atoms – transition probabilities – Einstein’s coefficients – selection rules for harmonic oscillator and hydrogen atom (rigorous derivation not included). (6) Total 42 REFERENCES: 1. Amit Goswami, "Quantum Mechanics", WCB Publishers, 1992. 2. Rajput Pragati Prakashan B S, "Advanced Quantum Mechanics", 1990. 3. Kakani and Chandalia, “Quantum Mechanics", Sultan Chand & Sons, 1980. 4. Schiff L I, "Quantum Mechanics", McGraw Hill Book Co.,1975. 5. Ghatak and Lokanathan, "Quantum Mechanics", The MacMillan Co., of India Ltd 1975. 6. Coulson ELBS and Oxford University Press, "Valence", 1969. 7. John C Slater, "Quantum Theory of Molecules and Solids" (Vol.I), McGraw Hill Book Co., 1965. 08O026 ELECTRO OPTIC MATERIALS 3 0 0 3 Basics of laser: Laser beam characteristics, modes, noise, types of solid lasers (brief). (5) Fundamentals of crystallography: Symmetry operations and symmetry elements, point groups, tensor properties, dielectric description of a crystal, crystal structure of KDP, BaTiO3 and LiNbO3 (6) PROPAGATION OF ELECTROMAGNETIC WAVES: Anisotropic media - index ellipsoid, propagation in uniaxial crystals, Birefringence, wave plates and compensators, optical activity. (5) MATERIALS SELECTION FOR ELECTRO-OPTIC AND ACOUSTO-OPTIC DEVICES: Growth of single crystals - Czochralski, Bridgmann and Zone refining techniques. (4) Electro-optic effect: E-O effect in KDP E-O retardation, E-O modulation - longitudinal and transverse E-O effect in cubic crystals, E-O Q- switching (Experimental) Beam deflectors. (6) ACOUSTO-OPTIC AND ELASTO-OPTIC EFFECTS: Materials and devices based on these effects - modulators. (4) Non linear phenomena: SHG, mode locking and frequency mixing - materials and devices. (5) Non Linear Optical Materials and Devices: Semiconductors - measurement of third order optical non-linearities in semiconductors. Optical switching devices employing optical non-linearities in semiconductors. Glasses - origin of non-linearity in glasses - SHG. (5) MOLECULAR CRYSTALS: Growth of molecular crystals by temperature difference method. Liquid crystal E-O devices (brief). (2)
REFERENCES: 1. Munn R W (Ed) and Ironsid C N, "Non Linear Optical Materials", Blackie Academic & Professional, Glassgow, 1993. 2. Kochner W, "Solid State Laser Engineering", Springer-Verlag, New York, 1976. 3. Yariv A, “Quantum Electronics", John Wiley & Sons, 1975. 4. Ivan P Kaminov, "An Introduction to Electro-Optic Devices", Academic press, New York, 1974.
1. Treatise on Materials Science and Technology, Volume 27, "Analytical Techniques for Thin Films", Academic Press, Inc., New York, 1991. 2. Prutton M, "Surface Physics", Clarenden Press Oxford, 1975. 3. Rodriquez F, “Principles of Polymer Systems", Tata McGraw Hill Co., 1974. 4. Edward A Colline, Jan Bares and Fred W Billmeyer, "Experiments in Polymer science", Jr Wiley - Interscience, 1973. 5. Cullity Addision B D, "Elements of X-ray Diffraction", Wesley Publishing Co., 1967. 6. Bacon G E, "X- ray and Neutron Diffraction", Pergamon Press, 1966. 7. Rohert S Shankaland, "Atomic and Nuclear Physics", The Macmillan Co., New York, 1960. 08O028 VACUUM SCIENCE AND DEPOSITION TECHNIQUES 3 0 0 3 Elements of high vacuum system: Study of a system to produce high vacuum, pumping speed, conductance of an orifice and tube, losses in pumping speed and determination of pumping speed. (5) Types of pumps: Rotary pump, diffusion pump, ejector pump, turbo molecular pump, roots blower pump, getter ion pump, sputter ion pump, cryosorption pump, cryocondensation pump - working principle, construction, operation - pressure range, limitations and pumping characteristics. (8) Problems connected with high vacuum: Outgassing of materials - real and virtual leaks - methods of leak detection - sealing substance outside and pressure change inside - rate of pressure rise method - halogen leak detector and the helium leak detector. (7) Vacuum components: Baffles and traps: Some designs of baffles, inline trap, right angle trap, dished trap, re-entrant trap, spherical trap and sorption trap, pumping losses in baffles and traps (qualitative). Vacuum valves: Gate valve, disc valve, flap valve, globe valve, needle valve and diaphragm valve. Some types of backable valves (Apart, Theorres and Nier tange valve). Vacuum seals: Common seals using elastomers, sliding and rotating seals, electrical lead and through. (9) Vacuum measurements: Primary gauges: Viscosity gauge, radiometer types gauge, Mcleod gauge with construction and working principle. Secondary gauges: Pirani gauge, thermocouple gauge, thermionic ionization gauge, cold cathode ionisation gauge (Penning gauge) - working principle, construction and operation limits. (7) Ultra high vacuum gauges: X-ray limit of ionisation gauges, Baird Albert gauge, Klopfer gauge, Helmer gauge, Lafferty gauge, Red head gauge. (3) Materials used in vacuum system: Metals and their alloys, elastomer, glasses, ceramics, vacuum greases, oils, cements and waxes, drying and sorption agents. (3) Total 42 REFERENCES: 1. Pipko A, et al., "Fundamentals of Vacuum Techniques", Mir Publishers, 1987. 2. Leon I Maissel and Reinard Glang, "Hand Book of Thin Film Technology", McGraw Hill, 1970. 3. Green G L, “Design and Construction of Small Vacuum System", Chapman and Hall Ltd, 1968. 4. Dennis N TM and Heppel TA, "Vacuum Systems Design", Chapman and Hall Ltd., 1968. 5. Albert E Barrington, "High Vacuum Engineering", Prentice Hall, 1964. 6. Andrew Guthrie, "Vacuum Technology", John Wiley, 1963. 7. Davy J R, “Industrial High Vacuum", Sir Isaac Pitman and Sons, 1963. 08O029 SEMICONDUCTING MATERIALS AND DEVICES 3 0 0 3 PROPERTIES OF SEMICONDUCTORS: Density of states for a 3 dimensional system and in sub 3 dimensional system – Holes in semiconductors, Band structures of some semiconductors. Modification of band structure by alloying and by hetero structures. Quantum well structures, Intrinsic carrier concentration, Defect levels in semiconductors. (10) DOPING AND CARRIER TRANSPORT: Doping: Extrinsic carrier density – Heavily doped semiconductors – Modulation doping (MODFET) – Transport: Scattering of electrons – Photon and ionised impurity scattering – Low field and high field transport in Si and GaAs – Transport of holes – Very high field transport: Break down phenomena – Avalanche break down (APD) – Carrier transport by diffusion. (10) P N JUNCTIONS AND BIPOLAR JUNCTIONS TRANSISTORS: P-N junction under bias: Charge injection and current flow – Minority and majority currents – AC response of the p-n diode – Small signal equivalent circuit of a diode – BJT: minority carrier profiles – current components and current gain – Ebers – Moll model – Operating point and small signal equivalent circuits – BJT’s in integrated circuits – Heterojunction BJT’s – Microwave transistor – Qualitative operation of the JFET and MOSFET. (12) OPTO ELECTRONIC DETECTORS AND LASER DIODES: Optical absorption in a semiconductor, Materials for optical detectors, Photo current in a p-n diode, Solar cell, Avalanche photo detector, Photo transistor, Quantum well inter subband detector. Laser diode, the laser structure, the optical cavity, optical absorption, Loss and gain, Laser below and above threshold. Advanced structures, Double hetero structure laser, Quantum well lasers, Quantum wire and quantum dot lasers. (10)
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