Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

Title: Tunable DFB lasers integrated with Ti thin film heaters fabricated with a simple procedure

Author(s): Zhang, C (Zhang, Can); Liang, S (Liang, Song); Zhu, HL (Zhu, Hongliang); Wang, W (Wang, Wei)

Source: OPTICS AND LASER TECHNOLOGY Volume: 54 Pages: 148-150 DOI: 10.1016/j.optlastec.2013.05.024 Published: DEC 30 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Tunable DFB lasers integrated with thin film heaters fabricated with a novel procedure are presented. Ti and Au layers are deposited successively in a single sputter run and act as both p electrodes of the lasers and contact pads of the heaters. Au above the heater strips is selectively removed, leaving Ti alone as the heater material. With the procedure, no separate step for the deposition of heater material is needed, which simplifies the integration of thin film heaters with lasers greatly. A large heater resistance and thus a high tuning efficiency can be obtained at the same time. (C) 2013 Elsevier Ltd. All rights reserved.

Addresses: [Zhang, Can; Liang, Song; Zhu, Hongliang; Wang, Wei] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Zhang, C (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: zhangcan537@semi.ac.cn

ISSN: 0030-3992
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Record 2 of 495

Title: Low temperature operating In2-xNixO3 sensors with high response and good selectivity for NO2 gas

Author(s): Chen, Y (Chen, Yu); Zhu, LH (Zhu, Linghui); Feng, CH (Feng, Caihui); Liu, J (Liu, Juan); Li, C (Li, Chao); Wen, SP (Wen, Shanpeng); Ruan, SP (Ruan, Shengping)

Source: JOURNAL OF ALLOYS AND COMPOUNDS Volume: 581 Pages: 653-658 DOI: 10.1016/j.jallcom.2013.07.168 Published: DEC 25 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Pure In2O3 and solid state solution In2-xNixO3 nanofibers with different Ni-doping concentration were prepared via electrospinning method. Sensor based on In2-xNixO3 nanofibers with 6 (mol)% Ni-doping concentration exhibited the highest response, good selectivity and low detectable concentration limit down to ppb levels of NO2 at a relatively low temperature of 90 degrees C. These properties make the In2-xNixO3 nanofibers good candidates for NO2 detection. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Zhu, Linghui; Feng, Caihui; Ruan, Shengping] State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China.

[Liu, Juan; Li, Chao; Wen, Shanpeng] Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples R China.

[Chen, Yu] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Wen, SP (reprint author), Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples R China.

E-mail Addresses: sp_wen@jlu.edu.cn; ruansp@jlu.edu.cn

ISSN: 0925-8388

Record 3 of 495

Title: TiO2 ultraviolet detector based on LaAlO3 substrate with low dark current

Author(s): Lv, KB (Lv, Kaibo); Zhang, M (Zhang, Min); Liu, CX (Liu, Caixia); Liu, GH (Liu, Guohua); Li, HC (Li, Huachen); Wen, SP (Wen, Shanpeng); Chen, Y (Chen, Yu); Ruan, SP (Ruan, Shengping)

Source: JOURNAL OF ALLOYS AND COMPOUNDS Volume: 580 Pages: 614-617 DOI: 10.1016/j.jallcom.2013.07.161 Published: DEC 15 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In this letter, metal-semiconductor-metal (MSM) ultraviolet TiO2 photodetectors based on LaAlO3 substrate were fabricated. TiO2 nano-film was prepared via a sol-gel method, and then was spin-coated on single crystal LaAlO3 substrate. Pt interdigitated electrodes were deposited on the top of TiO2 film. At 5 V bias, the dark current of the detector was only 50 pA, which is much lower than TiO2-based detector. When irradiated by 270 nm UV light, a high photoresponse of the device was obtained. The ratio of photocurrent to dark current was nearly 5 orders, which is much higher than other photodetectors based on TiO2 reported. The rise and fall time of the detector were 550 ms and 380 ms, respectively. The very low dark current and high sensitivity demonstrate the excellent application of the device in UV photo-electric detection. (C) 2013 Elsevier B.V. All rights reserved.

Addresses: [Lv, Kaibo; Liu, Caixia; Liu, Guohua; Ruan, Shengping] Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China.

[Zhang, Min; Li, Huachen; Wen, Shanpeng] Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples R China.

[Chen, Yu] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Wen, SP (reprint author), Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples R China.

E-mail Addresses: sp_wen@jlu.edu.cn; chenyu@semi.ac.cn; rsp1226@gmail.com

ISSN: 0925-8388

Record 4 of 495

Title: Self-assembly epitaxial growth of nanorods on nanowalls in hierarchical ZnO hexagonal nanocastle

Author(s): Chen, CL (Chen, Chenlong); Yan, T (Yan, Tao); Chou, MMC (Chou, Mitch M. C.); Lee, CY (Lee, Chun-Yu); Wang, BM (Wang, Bang-Min); Wen, MJ (Wen, Meng-Jie); Zhang, XW (Zhang, Xingwang)

Source: JOURNAL OF NANOPARTICLE RESEARCH Volume: 16 Issue: 1 Article Number: DOI: 10.1007/s11051-013-2142-z Published: DEC 13 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Three-dimensional (3D) hierarchical porous nanostructure materials with controlled morphology have attracted much attention for their unique properties and wide applications. In the present work, a novel 3D hierarchical ZnO nanostructure was prepared through chemical vapor deposition, which is self-assembled by an array of vertical 1D nanorods on top of 2D nanowalls network in 3D hexagonal nanocastle. As revealed by transmission electron microscopy, the hierarchical nanostructures are composed of single crystal ZnO along the [0001] direction, and the preferred surfaces of nanowalls are . Based on those experimental results, a growth mechanism which involves a Zn-self-catalytic vapor-liquid-solid and vapor-solid mode is proposed to explain the formation of nanorods on nanowalls in 3D nanocastle. Raman and photoluminescence spectrum demonstrated that these 3D hierarchical ZnO nanostructures are nearly free of strain and exhibit an intense ultraviolet emission at 377.6 nm with negligible defect-related green bands.

Addresses: [Chen, Chenlong; Yan, Tao; Chou, Mitch M. C.; Lee, Chun-Yu; Wang, Bang-Min; Wen, Meng-Jie] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, NSC Taiwan Consortium Emergent Crystalline Mat, Kaohsiung 80424, Taiwan.

[Zhang, Xingwang] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Chou, MMC (reprint author), Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, NSC Taiwan Consortium Emergent Crystalline Mat, Kaohsiung 80424, Taiwan.

E-mail Addresses: clchen@semi.ac.cn; mitch@faculty.nsysu.edu.tw

ISSN: 1388-0764
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Record 5 of 495

Title: Monolithically integrated terahertz quantum cascade array laser

Author(s): Chen, JY (Chen, Jian-Yan); Liu, JQ (Liu, Junqi); Wang, T (Wang, Tao); Liu, FQ (Liu, Fengqi); Wang, ZG (Wang, Zhanguo)

Source: ELECTRONICS LETTERS Volume: 49 Issue: 25 Pages: 1632-1633 DOI: 10.1049/el.2013.3456 Published: DEC 5 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: By integrating triple terahertz quantum cascade lasers (at approximate to 3.25 THz) monolithically into an array, a peak power of 213 mW is obtained at 10 K with a threshold current density of only 257 A/cm(2). The device shows distinct single-lobe far-field behaviour in the temperature range from 10 to 90 K, with a full-width at half-maximum of 36 degrees. The highest operating temperature of the array laser is identical to that of the single ridge laser, indicating good heat dissipation design in the array. These results are promising for realising high power THz quantum cascade lasers.

Addresses: [Chen, Jian-Yan; Liu, Junqi; Wang, Tao; Liu, Fengqi; Wang, Zhanguo] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

Reprint Address: Chen, JY (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.

E-mail Addresses: jqliu@semi.ac.cn

ISSN: 0013-5194

Record 6 of 495

Title: An ultrathin terahertz lens with axial long focal depth based on metasurfaces

Author(s): Jiang, XY (Jiang, Xiao-Yan); Ye, JS (Ye, Jia-Sheng); He, JW (He, Jing-Wen); Wang, XK (Wang, Xin-Ke); Hu, D (Hu, Dan); Feng, SF (Feng, Sheng-Fei); Kan, Q (Kan, Qiang); Zhang, Y (Zhang, Yan)

Source: OPTICS EXPRESS Volume: 21 Issue: 24 Pages: 30030-30038 DOI: 10.1364/OE.21.030030 Published: DEC 2 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The plasmonic resonance effect on metasurfaces generates an abrupt phase change. We employ this phase modulation mechanism to design the longitudinal field distribution of an ultrathin terahertz (THz) lens for achieving the axial long-focal-depth (LFD) property. Phase distributions of the designed lens are obtained by the Yang-Gu iterative amplitude-phase retrieval algorithm. By depositing a 100 nm gold film on a 500 mu m silicon substrate and etching arrayed V-shaped air holes through the gold film, the designed ultrathin THz lens is fabricated by the micro photolithography technology. Experimental measurements have demonstrated its LFD property, which basically agree with the theoretical simulations. In addition, the designed THz lens possesses a good LFD property with a bandwidth of 200 GHz. It is expected that the designed ultrathin LFD THz lens should have wide potential applications in broadband THz imaging and THz communication systems. (C) 2013 Optical Society of America

Addresses: [Jiang, Xiao-Yan; Ye, Jia-Sheng; He, Jing-Wen; Wang, Xin-Ke; Hu, Dan; Feng, Sheng-Fei; Zhang, Yan] Capital Normal Univ, Dept Phys, Beijing 100048, Peoples R China.

[Jiang, Xiao-Yan; Ye, Jia-Sheng; He, Jing-Wen; Wang, Xin-Ke; Hu, Dan; Feng, Sheng-Fei; Zhang, Yan] Minist Educ, Beijing Key Lab THz Spect & Imaging, Key Lab THz Optoelect, Beijing 100048, Peoples R China.

[Ye, Jia-Sheng; Wang, Xin-Ke; Feng, Sheng-Fei; Zhang, Yan] Harbin Inst Technol, Beijing Ctr Math & Informat Interdisciplinary Sci, Harbin 150001, Peoples R China.

[He, Jing-Wen; Hu, Dan; Zhang, Yan] Harbin Inst Technol, Dept Phys, Harbin 150001, Peoples R China.

[Kan, Qiang] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Ye, JS (reprint author), Capital Normal Univ, Dept Phys, Beijing 100048, Peoples R China.

E-mail Addresses: jiashengye@gmail.com; yzhang@mail.cnu.edu.cn

ISSN: 1094-4087

Record 7 of 495

Title: Improved picoliter-sized micro-reactors for high-throughput biological analysis

Author(s): Han, WJ (Han WeiJing); Yuan, LN (Yuan LiNa); Wei, QQ (Wei QingQuan); Li, YT (Li YunTao); Ren, LF (Ren LuFeng); Zhou, XG (Zhou XiaoGuang); Yu, J (Yu Jun); Yu, YD (Yu YuDe)

Source: SCIENCE CHINA-LIFE SCIENCES Volume: 56 Issue: 12 Pages: 1134-1141 DOI: 10.1007/s11427-013-4564-3 Published: DEC 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: High-throughput pyrosequencing, carried out in millions of picoliter-sized reactors on a fiber-optic slide, is known for its longer read length. However, both optical crosstalk (which reduces the signal-to-noise ratio of CCD images) and chemical retention adversely affect the accuracy of chemiluminescence determination, and ultimately decrease the read length and the accuracy of pyrosequencing results. In this study, both titanium and oxidized aluminum films were deposited on the side walls and upper faces of micro-reactor slides to enhance optical isolation; the films reduced the inter-well crosstalk by one order of magnitude. Subsequently, chemical retention was shown to be caused by the lower diffusion coefficient of the side walls of the picoliter-sized reactors because of surface roughness and random pores. Optically isolated fiber-optic slides over-coated with silicon oxide showed smoother surface morphology, resulting in little chemical retention; this was further confirmed with theoretical calculations. Picoliter-sized micro-reactors coated with titanium-silicon oxide films showed the least inter-well optical crosstalk and chemical retention; these properties are expected to greatly improve the high-throughput pyrosequencing performance.

Addresses: [Han WeiJing; Wei QingQuan; Li YunTao; Zhou XiaoGuang; Yu YuDe] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Yuan LiNa; Ren LuFeng; Yu Jun] Chinese Acad Sci, Beijing Inst Genom, DNA Sequencing Technol R&D Ctr, Beijing 100101, Peoples R China.

[Han WeiJing; Yuan LiNa; Wei QingQuan; Li YunTao; Ren LuFeng; Zhou XiaoGuang; Yu Jun; Yu YuDe] Chinese Acad Sci, Inst Semicond, Joint Lab Bioinformat Acquisit & Sensing Technol, Beijing Inst Genom, Beijing 100083, Peoples R China.

Reprint Address: Yu, YD (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: junyu@big.ac.cn; yudeyu@semi.ac.cn

ISSN: 1674-7305

Record 8 of 495

Title: Performance Enhancement of Thin-Film Amorphous Silicon Solar Cells with Low Cost Nanodent Plasmonic Substrates (vol 6, pg 2965, 2013)

Author(s): Huang, HT (Huang, Hongtao); Lu, LF (Lu, Linfeng); Wang, J (Wang, Jun); Yang, J (Yang, Jie); Leung, SF (Leung, Siu-Fung); Wang, YQ (Wang, Yongqian); Chen, D (Chen, Di); Chen, XY (Chen, Xiaoyuan); Shen, GZ (Shen, Guozhen); Li, DD (Li, Dongdong); Fan, ZY (Fan, Zhiyong)

Source: ENERGY & ENVIRONMENTAL SCIENCE Volume: 6 Issue: 12 Pages: 3790-3790 Published: DEC 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Addresses: [Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Shen, GZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

ISSN: 1754-5692

Record 9 of 495

Title: Design and Optimization of 2D Laser Source Module for Compact Projector

Author(s): Kong, QS (Kong, Qingshan); Tong, YW (Tong, Youwan); Dong, H (Dong, Hui); Fang, Q (Fang, Qing); Zhou, Y (Zhou, Yan); Liu, YL (Liu, Yuliang)

Source: JOURNAL OF DISPLAY TECHNOLOGY Volume: 9 Issue: 12 Pages: 995-1000 DOI: 10.1109/JDT.2013.2272856 Published: DEC 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: In order to make projector compact and efficient, we propose that the 2D laser source module is consisted of VCSEL array and micro-lens array. It describes packaging structure design of VCSEL array and thermal resistance calculation. A thermal 3D analysis of 3x3 array based on the finite-element method (FEM) is presented. The analysis shows that the maximum internal temperature of a VCSEL array reaches 51 degrees C. Then, it describes the principle of the micro-lens array. By ZEMAX simulation, in the micro-lens array illumination system, we have got the energy efficiency 67.3%, the light uniformity is 95.5%, respectively, on the micro-display chip at the distance of 65 mm. We have successfully built the complete 3-LCOS projection system based on the 2D source module. It can provide 1362 lm D65 light, and its total volume is 260 x 200 x 160 mm(3) which is more compact than the commercial projector.

Addresses: [Kong, Qingshan; Tong, Youwan; Dong, Hui; Fang, Qing; Zhou, Yan; Liu, Yuliang] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

Reprint Address: Kong, QS (reprint author), Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, Beijing 100083, Peoples R China.

E-mail Addresses: kongqs@semi.ac.cn

ISSN: 1551-319X

Record 10 of 495

Title: A Processing Window for Fabricating Heavily Doped Silicon Nanowires by Metal-Assisted Chemical Etching

Author(s): Qi, YY (Qi, Yangyang); Wang, Z (Wang, Zhen); Zhang, ML (Zhang, Mingliang); Yang, FH (Yang, Fuhua); Wang, XD (Wang, Xiaodong)

Source: JOURNAL OF PHYSICAL CHEMISTRY C Volume: 117 Issue: 47 Pages: 25090-25096 DOI: 10.1021/jp407720e Published: NOV 28 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Heavily doped silicon nanowires (SiNWs) with controllable doping concentrations can be used in many fields because of their unique characteristics. However, it is difficult to fabricate long heavily doped SiNWs. In this article, a systematic study of metal-assisted chemical etching (MACE) of heavily doped silicon wafers is presented. High-quality SiNWS with lengths up to 40 mu m could be achieved. The electron-transfer processes among Si, Ag+, Ag nanoparticles, and H2O2 were investigated to explain the formation of SiNWs. A chemical etching processing window, considering HF and H2O2 concentrations, reaction temperature, and etching time, is proposed. To obtain SiNWs, the etching reaction should occur at room temperature for less than 40 min. The appropriate concentration ranges are 0.2-0.4 M for H2O2 and 8-10 M for HF. Transmission electron microscopy (TEM) measurements confirmed that the as-prepared nanowires were single-crystalline. Current-voltage (I-V) measurements of an individual nanowire showed a resistance larger than the calculated value based on bulk silicon. This work can provide guidelines for obtaining high-quality heavily doped SiNWs using the MACE method.

Addresses: [Qi, Yangyang; Wang, Zhen; Zhang, Mingliang; Yang, Fuhua; Wang, Xiaodong] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

Reprint Address: Wang, XD (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

E-mail Addresses: xdwang@semi.ac.cn

ISSN: 1932-7447

Record 11 of 495

Title: GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition

Author(s): Xu, K (Xu, Kun); Xu, C (Xu, Chen); Xie, YY (Xie, Yiyang); Deng, J (Deng, Jun); Zhu, YX (Zhu, Yanxu); Guo, WL (Guo, Weiling); Mao, MM (Mao, Mingming); Xun, M (Xun, Meng); Chen, MX (Chen, Maoxing); Zheng, L (Zheng, Lei); Sun, J (Sun, Jie)

Source: APPLIED PHYSICS LETTERS Volume: 103 Issue: 22 Article Number: 222105 DOI: 10.1063/1.4836375 Published: NOV 25 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar GaN-graphene diodes. The suspended graphene remains electrically stable up to 300 degrees C in air. The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications. (C) 2013 AIP Publishing LLC.

Addresses: [Xu, Kun; Xu, Chen; Deng, Jun; Zhu, Yanxu; Guo, Weiling; Mao, Mingming; Xun, Meng; Chen, Maoxing; Zheng, Lei; Sun, Jie] Beijing Univ Technol, Key Lab Optoelect, Minist Educ, Beijing 100124, Peoples R China.

[Xie, Yiyang] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

[Sun, Jie] Chalmers Tekniska Hogskola AB, S-41296 Gothenburg, Sweden.

Reprint Address: Xu, C (reprint author), Beijing Univ Technol, Key Lab Optoelect, Minist Educ, Beijing 100124, Peoples R China.

E-mail Addresses: xuchen58@bjut.edu.cn; jie.sun@chalmers.se

ISSN: 0003-6951

Record 12 of 495

Title: Algebraic and geometric mean density of states in topological Anderson insulators

Author(s): Zhang, YY (Zhang, Yan-Yang); Shen, SQ (Shen, Shun-Qing)

Source: PHYSICAL REVIEW B Volume: 88 Issue: 19 Article Number: 195145 DOI: 10.1103/PhysRevB.88.195145 Published: NOV 25 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Algebraic and geometric mean density of states in disordered systems may reveal properties of electronic localization. In order to understand the topological phases with disorder in two dimensions, we present the calculated density of states for the disordered Bernevig-Hughes-Zhang model. The topological phase is characterized by a perfectly quantized conducting plateau, carried by helical edge states, in a two-terminal setup. In the presence of disorder, the bulk of the topological phase is either a band insulator or an Anderson insulator. Both of them can protect edge states from backscattering. The topological phases are explicitly distinguished as a topological band insulator or a topological Anderson insulator from the ratio of the algebraic mean density of states to the geometric mean density of states. The calculation reveals that the topological Anderson insulator can be induced by disorders from either a topologically trivial band insulator or a topologically nontrivial band insulator.

Addresses: [Zhang, Yan-Yang; Shen, Shun-Qing] Univ Hong Kong, Dept Phys, Pokfulam, Hong Kong, Peoples R China.

[Zhang, Yan-Yang] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.

Reprint Address: Zhang, YY (reprint author), Univ Hong Kong, Dept Phys, Pokfulam, Hong Kong, Peoples R China.

ISSN: 1098-0121

Record 13 of 495

Title: Atomic Layer Deposition of BiFeO3 Thin Films Using beta-Diketonates and H2O

Author(s): Zhang, F (Zhang, Feng); Sun, GS (Sun, Guosheng); Zhao, WS (Zhao, Wanshun); Wang, L (Wang, Lei); Zeng, L (Zeng, Liu); Liu, SB (Liu, Shengbei); Liu, B (Liu, Bin); Dong, L (Dong, Lin); Liu, XF (Liu, Xingfang); Yan, GG (Yan, Guoguo); Tian, LX (Tian, Lixin); Zeng, YP (Zeng, Yiping)

Source: JOURNAL OF PHYSICAL CHEMISTRY C Volume: 117 Issue: 46 Pages: 24579-24585 DOI: 10.1021/jp4080652 Published: NOV 21 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Bismuth ferrite (BiFeO3) thin films were grown by atomic layer deposition (ALD) by combining ALD of Bi2O3 and Fe2O3 and monitored by in-situ quartz crystal microbalance (QCM). The physical and chemical mechanisms of ALD of BiFeO3 were studied according to the results of in-situ QCM and indicate that the deposition of Bi-O and Fe-O were self-limited by molecular sizes of precursors and chemical absorption between precursors and hydroxyl groups. Pure Bi3+ and Fe3+ with atomic ratio of 1:1 were formed during the ALD, and no evaporation of Bi atoms was found at 250 degrees C by X-ray photoelectron spectroscopy (XPS). Pure rhombohedral phase was formed in BiFeO3 films after annealing at 650 degrees C by using X-ray diffraction (XRD). Polarization property of the ALD BFO film was observed and studied by using piezoresponse force microscopy (PFM). The ALD growth of BFO films demonstrates that ALD is an advanced deposition technique for BFO film preparation and memory device application.