Database: Compendex
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| 1. A multi-channel fully differential programmable integrated circuit for neural recording application
Gui, Yun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Xu; Wang, Yuan; Liu, Ming; Pei, Weihua; Liang, Kai; Huang, Suibiao; Li, Bin; Chen, Hongda Source: Journal of Semiconductors, v 34, n 10, October 2013 Database: Compendex 2. Electronic structural Moiré pattern effects on MoS 2/MoSe2 2D heterostructures Kang, Jun (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Li, Jingbo; Li, Shu-Shen; Xia, Jian-Bai; Wang, Lin-Wang Source: Nano Letters, v 13, n 11, p 5485-5490, November 13, 2013 Database: Compendex 3. 1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure Wang, Huolei (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China); Mi, Junping; Zhou, Xuliang; Meriggi, Laura; Steer, Matthew; Cui, Bifeng; Chen, Weixi; Pan, Jiaoqing; Ding, Ying Source: Optics Letters, v 38, n 22, p 4868-4871, November 15, 2013 Database: Compendex 4. High delay precision based on dynamic phase-shift for range-gated laser imaging technology Cui, Wei (Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Fan, Song-Tao; Wang, Xin-Wei; Zhou, Yan Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8905, 2013, International Symposium on Photoelectronic Detection and Imaging 2013: Laser Sensing and Imaging and Applications Database: Compendex 5. The application of camera calibration in range-gated 3-D imaging technology Liu, Xiao-Quan (Optoelectronic System Laboratory, Institute of Semiconductor, CAS, Beijing 100083, China); Wang, Xian-Wei; Zhou, Yan Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8905, 2013, International Symposium on Photoelectronic Detection and Imaging 2013: Laser Sensing and Imaging and Applications Database: Compendex 6. Atomic layer deposition of BiFeO3 thin films using β-diketonates and H2O Zhang, Feng (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Sun, Guosheng; Zhao, Wanshun; Wang, Lei; Zheng, Liu; Liu, Shengbei; Liu, Bin; Dong, Lin; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping Source: Journal of Physical Chemistry C, v 117, n 46, p 24579-24585, November 21, 2013 Database: Compendex 7. GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition Xu, Kun (Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124, China); Xu, Chen; Xie, Yiyang; Deng, Jun; Zhu, Yanxu; Guo, Weiling; Mao, Mingming; Xun, Meng; Chen, Maoxing; Zheng, Lei; Sun, Jie Source: Applied Physics Letters, v 103, n 22, November 25, 2013 Database: Compendex 8. Temperature dependence of electronic behaviors in n-type multiple-channel junctionless transistors Ma, Liuhong (Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Han, Weihua; Wang, Hao; Li, Xiaoming; Yang, Fuhua Source: Journal of Applied Physics, v 114, n 12, 2013 Database: Compendex 9. Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced lightextraction of light-emitting diodes Du, Chengxiao (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wei, Tongbo; Zheng, Haiyang; Wang, Liancheng; Geng, Chong; Yan, Qingfeng; Wang, Junxi; Li, Jinmin Source: Optics Express, v 21, n 21, p 25373-25380, October 21, 2013 Database: Compendex 10. First-principles study of electronic and magnetic properties of FeC13-based graphite intercalation compounds Li, Yan (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yue, Qu Source: Physica B: Condensed Matter, v 425, p 72-77, 2013 Database: Compendex 11. Design of a high-speed silicon electro-optical modulator based on an add-drop micro-ring resonator Cao, Tong-Tong (State Key Laboratory on Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Li-Bin; Fei, Yong-Hao; Cao, Yan-Mei; Lei, Xun; Chen, Shao-Wu Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 19, 2013 Language: Chinese Database: Compendex 12. Nanotetrapods: Quantum dot hybrid for bulk heterojunction solar cells Tan, Furui (Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Kaifeng 475004, China); Qu, Shengchun; Li, Fumin; Jiang, Qiwei; Chen, Chong; Zhang, Weifeng; Wang, Zhanguo Source: Nanoscale Research Letters, v 8, n 1, p 1-8, 2013 Database: Compendex 13. High power buried sampled grating distributed feedback quantum cascade lasers Zhang, J.C. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Liu, F.Q.; Yao, D.Y.; Zhuo, N.; Wang, L.J.; Liu, J.Q.; Wang, Z.G. Source: Journal of Applied Physics, v 113, n 15, April 2013 Database: Compendex 14. Number-resolved master equation approach to quantum transport under the self-consistent Born approximation Liu, Yu (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Jin, Jinshuang; Li, Jun; Li, Xinqi; Yan, Yijing Source: Science China: Physics, Mechanics and Astronomy, v 56, n 10, p 1866-1873, October 2013 Database: Compendex 15. A low-power column-parallel ADC for high-speed CMOS image sensor Han, Ye (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Quanliang; Shi, Cong; Liu, Liyuan; Wu, Nanjian Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8908, 2013, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications Database: Compendex 16. Rechargeable mg-ion batteries based on WSe2 nanowire cathodes Liu, Bin (Wuhan National Laboratory for Optoelectronics (WNLO), College of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China); Luo, Tao; Mu, Guangyuan; Wang, Xianfu; Chen, Di; Shen, Guozhen Source: ACS Nano, v 7, n 9, p 8051-8058, September 24, 2013 Database: Compendex 17. High efficient GaN-based laser diodes with tunnel junction Feng, M.X. (Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, China); Liu, J.P.; Zhang, S.M.; Jiang, D.S.; Li, Z.C.; Zhou, K.; Li, D.Y.; Zhang, L.Q.; Wang, F.; Wang, H.; Chen, P.; Liu, Z.S.; Zhao, D.G.; Sun, Q.; Yang, H. Source: Applied Physics Letters, v 103, n 4, July 22, 2013 Database: Compendex 18. Designment of a novel optical streak camera with ultrahigh temporal resolution Wei, Huiyue (Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China); Xu, Tao; Wang, Feng; Peng, Xiaoshi; Wei, Xin; Liu, Shenye Source: Guangxue Xuebao/Acta Optica Sinica, v 33, n 8, p 0823003, August 2013 Language: Chinese Database: Compendex 19. Low-threshold, high SMSR tunable external cavity quantum cascade laser around 4.7 μ m Tan, S. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, J.C.; Zhuo, N.; Wang, L.J.; Liu, F.Q.; Yao, D.Y.; Liu, J.Q.; Wang, Z.G. Source: Optical and Quantum Electronics, v 45, n 11, p 1147-1155, 2013 Database: Compendex 20. N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array Wang, Liancheng (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Ma, Jun; Liu, Zhiqiang; Yi, Xiaoyan; Yuan, Guodong; Wang, Guohong Source: Journal of Applied Physics, v 114, n 13, 2013 Database: Compendex 21. Electronic structure of twisted bilayer graphene Wu, Jiang-Bin (The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Xin; Tan, Ping-Heng; Feng, Zhi-Hong; Li, Jia Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 15, August 5, 2013 Language: Chinese Database: Compendex 22. Two-band finite difference method for the bandstructure calculation with nonparabolicity effects in quantum cascade lasers Ma, Xunpeng (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Kangwen; Zhang, Zuyin; Hu, Haifeng; Wang, Qing; Wei, Xin; Song, Guofeng Source: Journal of Applied Physics, v 114, n 6, August 14, 2013 Database: Compendex 23. From the ZnO hollow cage clusters to zno nanoporous phases: A first-principles bottom-up prediction Liu, Zhifeng (College of Physics, Chongqing University, Chongqing 401331, China); Wang, Xinqiang; Cai, Jiangtao; Liu, Gaobin; Zhou, Ping; Wang, Kan; Zhu, Hengjiang Source: Journal of Physical Chemistry C, v 117, n 34, p 17633-17643, August 29, 2013 Database: Compendex 24. Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization Li, Hongjian (R and D Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Panpan; Kang, Junjie; Li, Zhi; Zhang, Yiyun; Liang, Meng; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Wang, Guohong Source: Applied Physics Express, v 6, n 9, September 2013 Database: Compendex 25. A 10-bit column-parallel cyclic ADC for high-speed CMOS image sensors Han, Ye (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Quanliang; Shi, Cong; Wu, Nanjian Source: Journal of Semiconductors, v 34, n 8, August 2013 Database: Compendex 26. Photonic MMW-UWB signal generation via DPMZM-based frequency up-conversion Li, Wei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Li Xian; Zheng, Jian Yu; Li, Ming; Zhu, Ning Hua Source: IEEE Photonics Technology Letters, v 25, n 19, p 1875-1878, 2013 Database: Compendex 27. Single phase modulator for binary phase-coded microwave signals generation Li, Wei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Li Xian; Li, Ming; Zhu, Ning Hua Source: IEEE Photonics Technology Letters, v 25, n 19, p 1867-1870, 2013 Database: Compendex 28. MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers Zhang, Tiancheng (National Key Laboratory on High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China); Ni, Qinfei; Liu, Xuezhen; Yu, Bin; Wang, Yuxia; Zhang, Yu; Ma, Xunpeng; Wang, Yongbin; Xu, Yun Source: Key Engineering Materials, v 552, p 389-392, 2013, Advances in Optics Manufacture Database: Compendex 29. Double-layer anti-reflection coating containing a nanoporous anodic aluminum oxide layer for GaAs solar cells Yang, Tianshu (Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Xiaodong; Liu, Wen; Shi, Yanpeng; Yang, Fuhua Source: Optics Express, v 21, n 15, p 18207-18215, July 29, 2013 Database: Compendex 30. Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure Wang, Juan (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Wang, Guo-Wei; Xu, Ying-Qiang; Xing, Jun-Liang; Xiang, Wei; Tang, Bao; Zhu, Yan; Ren, Zheng-Wei; He, Zhen-Hong; Niu, Zhi-Chuan Source: Journal of Applied Physics, v 114, n 1, July 7, 2013 Database: Compendex 31. InAs-mediated growth of vertical InSb nanowires on Si substrates Li, Tianfeng (Department of Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, China); Gao, Lizhen; Lei, Wen; Guo, Lijun; Pan, Huayong; Yang, Tao; Chen, Yonghai; Wang, Zhanguo Source: Nanoscale Research Letters, v 8, n 1, 2013 Database: Compendex 32. A sphere-cut-splice crossover for the evolution of cluster structures Chen, Zhanghui (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Jiang, Xiangwei; Li, Jingbo; Li, Shushen Source: Journal of Chemical Physics, v 138, n 21, June 7, 2013 Database: Compendex 33. Ab initio theoretical and photoemission studies on formation of 4H-SiC(0 0 0 1)/SiO2 interface Zheng, Liu (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Sun, Guosheng; Zhang, Feng; Liu, Shengbei; Liu, Bin; Dong, Lin; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping Source: Applied Surface Science, v 280, p 500-503, September 1, 2013 Database: Compendex 34. Flexible asymmetric supercapacitors based upon Co9S8 nanorod//Co3O4@RuO2 nanosheet arrays on carbon cloth Xu, Jing (Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China); Wang, Qiufan; Wang, Xiaowei; Xiang, Qingyi; Liang, Bo; Chen, Di; Shen, Guozhen Source: ACS Nano, v 7, n 6, p 5453-5462, June 25, 2013 Database: Compendex 35. Spontaneous quasi-periodic current self-oscillations in a weakly coupled GaAs/(Al,Ga)As superlattice at room temperature Huang, Yuyang (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, No. 398, Ruoshui Rd, 215123 Suzhou, China); Li, Wen; Ma, Wenquan; Qin, Hua; Grahn, Holger T.; Zhang, Yaohui Source: Applied Physics Letters, v 102, n 24, June 17, 2013 Database: Compendex 36. Numerical study of radial temperature distribution in the AlN sublimation growth system Li, Huijie (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Liu, Xianglin; Feng, Yuxia; Wei, Hongyuan; Yang, Shaoyan Source: Crystal Research and Technology, v 48, n 5, p 321-327, May 2013 Database: Compendex 37. The single-longitudinal-mode operation of a ridge waveguide laser based on two-dimensional photonic crystals Wang, Hua-Yong (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Xu, Xing-Sheng Source: Chinese Physics B, v 22, n 5, May 2013 Database: Compendex 38. Development of silicon photonic devices for optical interconnects Xiao, Xi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Zhiyong; Chu, Tao; Xu, Hao; Li, Xianyao; Nemkova, Anastasia; Kang, Xiong; Yu, Yude; Yu, Jinzhong Source: Science China Technological Sciences, v 56, n 3, p 586-593, March 2013 Database: Compendex 39. Output characteristics of square and circular resonator microlasers connected with two output waveguides Huang, Yongzhen (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Lü, Xiaomeng; Lin, Jiandong; Du, Yun Source: Science China Technological Sciences, v 56, n 3, p 538-542, March 2013 Database: Compendex 40. Shock-induced brittle cracking in HVPE-GaN processed by laser lift-off techniques Su, X.J. (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China); Xu, K.; Xu, Y.; Ren, G.Q.; Zhang, J.C.; Wang, J.F.; Yang, H. Source: Journal of Physics D: Applied Physics, v 46, n 20, May 22, 2013 Database: Compendex 41. Single InAs quantum dot coupled to different "environments" in one wafer for quantum photonics Yu, Ying (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Shang, Xiang-Jun; Li, Mi-Feng; Zha, Guo-Wei; Xu, Jian-Xing; Wang, Li-Juan; Wang, Guo-Wei; Ni, Hai-Qiao; Dou, Xiuming; Sun, Baoquan; Niu, Zhi-Chuan Source: Applied Physics Letters, v 102, n 20, May 20, 2013 Database: Compendex 42. 32-site microelectrode modified with Pt black for neural recording fabricated with thin-film silicon membrane Chen, SanYuan (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Pei, WeiHua; Zhao, Hui; Gui, Qiang; Tang, RongYu; Chen, YuanFang; Fang, XiaoLei; Hong, Bo; Gao, XiaoRong; Chen, HongDa Source: Science China Information Sciences, p 1-7, 2013 Article in Press Database: Compendex 43. A 0.6-V to 1-V Audio ΔΣ modulator in 65 nm CMOS with 90.2 dB SNDR at 0.6-V Liu, Liyuan (Tsinghua University, Beijing 100084, China); Li, Dongmei; Wang, Zhihua Source: VLSI Design, v 2013, 2013 Database: Compendex 44. Characteristics of GaN-based high-voltage LEDs compared to traditional high power LEDs Zhan, Teng (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Yang; Ma, Jun; Tian, Ting; Li, Jing; Liu, Zhiqiang; Yi, Xiaoyan; Guo, Jinxia; Wang, Guohong; Li, Jinmin Source: IEEE Photonics Technology Letters, v 25, n 9, p 844-847, 2013 Database: Compendex 45. Feed-through cancellation of a MEMS filter using the difference method and analysis of the induced notch Han, Guowei (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Si, Chaowei; Ning, Jin; Zhong, Weiwei; Sun, Guosheng; Zhao, Yongmei; Yang, Fuhua Source: Journal of Semiconductors, v 34, n 4, April 2013 Database: Compendex 46. DFB laser array monolithically integrated with MMI combiner and SOA Ma, Li (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhu, Hong-Liang; Liang, Song; Wang, Bao-Jun; Zhang, Can; Zhao, Ling-Juan; Bian, Jing; Chen, Ming-Hua Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 24, n 3, p 424-428, March 2013 Language: Chinese Database: Compendex 47. Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy Su, X.J. (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China); Xu, K.; Ren, G.Q.; Wang, J.F.; Xu, Y.; Zeng, X.H.; Zhang, J.C.; Cai, D.M.; Zhou, T.F.; Liu, Z.H.; Yang, H. Source: Journal of Crystal Growth, v 372, p 43-48, 2013 Database: Compendex 48. Electron transport in a HgTe quantum spin Hall bar with periodic electric modulations Lin, Liang-Zhong (SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, China); Cheng, F.; Zhang, D.; Lou, Wen-Kai; Zhang, Le-Bo Source: Solid State Communications, v 161, p 34-37, May 2013 Database: Compendex 49. EIT and MOLLOW spectrum in N-type four-level system Li, Xiao-Li (College of Physical Science and Technology, Hebei University, Baoding 071002, China); Meng, Xu-Dong; Yang, Zi-Cai; Sun, Jiang Source: Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis, v 33, n 3, p 590-594, March 2013 Language: Chinese Database: Compendex 50. Wavelength and mode-spacing tunable dual-mode distributed bragg reflector laser Yu, Liqiang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China); Lu, Dan; Zhao, Lingjuan; Li, Yan; Ji, Chen; Pan, Jiaoqing; Zhu, Hongliang; Wang, Wei Source: IEEE Photonics Technology Letters, v 25, n 6, p 576-579, 2013 Database: Compendex 51. Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell Li, Zhidong (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Xiao, Hongling; Wang, Xiaoliang; Wang, Cuimei; Deng, Qingwen; Jing, Liang; Ding, Jieqin; Hou, Xun Source: Physica B: Condensed Matter, v 414, p 110-114, April 1, 2013 Database: Compendex 52. Modulating lateral modes of semiconductor laser by photonic crystal structures Zhang, Jianxin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Lei; Chen, Wei; Qu, Hongwei; Zheng, Wanhua Source: Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, v 42, n 1, p 69-72, January 2013 Language: Chinese Database: Compendex 53. PDECO: Parallel differential evolution for clusters optimization Chen, Zhanghui (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Jiang, Xiangwei; Li, Jingbo; Li, Shushen; Wang, Linwang Source: Journal of Computational Chemistry, v 34, n 12, p 1046-1059, May 5, 2013 Database: Compendex 54. Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar Cheng, Fang (Department of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410004, China); Lin, L.Z.; Zhang, L.B.; Zhou, Guanghui Source: Journal of Applied Physics, v 113, n 5, February 7, 2013 Database: Compendex 55. Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching Ma, Jun (Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Liancheng; Liu, Zhiqiang; Yuan, Guodong; Ji, Xiaoli; Ma, Ping; Wang, Junxi; Yi, Xiaoyan; Wang, Guohong; Li, Jinmin Source: Optics Express, v 21, n 3, p 3547-3556, February 11, 2013 Database: Compendex 56. Pattern classification neural network model based on homologue connectedness Yang, Guo-Wei (Nanchang Hangkong University, Key Laboratory of Jiangxi Province for Image Processing and Pattern Recognition, Nanchang, Jiangxi 330063, China); Wang, Shou-Jue; Wei, Cheng-Bing; Cao, Wen-Yi Source: Tien Tzu Hsueh Pao/Acta Electronica Sinica, v 41, n 1, p 52-55, January 2013 Language: Chinese Database: Compendex 57. XOR/XNOR directed logic circuit based on coupled-resonator-induced transparency Tian, Yonghui (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Lei; Xu, Qianfan; Yang, Lin Source: Laser and Photonics Reviews, v 7, n 1, p 109-113, January 2013 Database: Compendex 58. Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes Zhang, Yiyun (Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zheng, Haiyang; Guo, Enqing; Cheng, Yan; Ma, Jun; Wang, Liancheng; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Guohong; Li, Jinmin Source: Journal of Applied Physics, v 113, n 1, January 7, 2013 |