Title: Tunable dfb lasers integrated with Ti thin film heaters fabricated with a simple procedure

[Hou, Xiaojuan; Liu, Bin; Wang, Xianfu; Wang, Zhuoran; Wang, Qiufan; Chen, Di] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China.

[Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Chen, D (reprint author), Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China.

E-mail Addresses: dichen@mail.hust.edu.cn; gzshen@semi.ac.cn

ISSN: 2040-3364

Record 459 of 495

Title: Abnormal low-temperature behavior of a continuous photocurrent in Bi2S3 nanowires

Author(s): Li, RX (Li, Renxiong); Yue, Q (Yue, Qu); Wei, ZM (Wei, Zhongming)

Source: JOURNAL OF MATERIALS CHEMISTRY C Volume: 1 Issue: 37 Pages: 5866-5871 DOI: 10.1039/c3tc30943f Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: High-quality Bi2S3 nanowires are synthesized and their photoresponses are investigated in detail. Our results show that the photoresponsive curves have distinctly different characteristics at low-temperature (50 K) compared to those at room temperature (290 K). The transferred-electron effect is believed to cause this difference. A first principle calculation shows that Bi2S3 has many energy valleys, which agree with our experimental analysis. At low temperature, due to the lack of sufficient phonon energy, the photoexcited electrons in Bi2S3 mainly aggregate at the bottom of the conduction band. When this electron concentration increased to a high enough level after illumination, an electron transfer between the energy valleys happened and the photocurrent began to decrease slowly after the rapid increase in the first stage. After the transfer process reaches equilibrium, the photocurrent reaches a minimum, thus the trap states play a dominant role and the photocurrent rises slowly again. Furthermore, photocurrent curves at different temperatures were recorded to estimate the phonon energy value needed to assist the electron transitions. The required phonon energy is calculated to be about 16.3 meV (corresponding to 190 K), which fits well with previous results.

Addresses: [Li, Renxiong; Wei, Zhongming] Chinese Acad Sci, Inst Semiconductors, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

[Yue, Qu] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China.

Reprint Address: Wei, ZM (reprint author), Chinese Acad Sci, Inst Semiconductors, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: zmwei@semi.ac.cn

ISSN: 2050-7526
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Record 460 of 495

Title: Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier

Author(s): Si, Z (Si, Zhao); Wei, TB (Wei, Tongbo); Ma, J (Ma, Jun); Yan, JC (Yan, Jianchang); Wei, XC (Wei, Xuecheng); Lu, HX (Lu, Hongxi); Fu, BL (Fu, Binglei); Zhu, SX (Zhu, Shaoxin); Liu, Z (Liu, Zhe); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin)

Source: ECS SOLID STATE LETTERS Volume: 2 Issue: 10 Pages: R37-R39 DOI: 10.1149/2.006310ssl Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A study about the effect of Mg doping in specified quantum-barrier on dual wavelength light emitting diodes (LEDs) was performed. A series of dual wavelength LEDs with different Mg doping conditions and barrier thickness were fabricated. According to electroluminescence measurement, as Mg doping concentration and barrier thickness varied, improved carrier distribution and bottom QWs emitting was achieved. This result is in accord with APSYS simulation. In addition, the sample with appropriate Mg doping level showed dual wavelength emitting. It is concluded that Mg doping in specified quantum-barrier could improve optical and electrical properties of dual wavelength LEDs. (c) 2013 The Electrochemical Society. All rights reserved.

Addresses: [Si, Zhao; Wei, Tongbo; Ma, Jun; Yan, Jianchang; Wei, Xuecheng; Lu, Hongxi; Fu, Binglei; Zhu, Shaoxin; Liu, Zhe; Wang, Junxi; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting, Beijing 100083, Peoples R China.

Reprint Address: Si, Z (reprint author), Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting, Beijing 100083, Peoples R China.

E-mail Addresses: sizhao@semi.ac.cn; tbwei@semi.ac.cn

ISSN: 2162-8742

Record 461 of 495

Title: Multi-component continuous separation chip composed of micropillar arrays in a split-level spiral channel

Author(s): Geng, ZX (Geng, Zhaoxin); Ju, YR (Ju, Yanrui); Wang, QF (Wang, Qifeng); Wang, W (Wang, Wei); Li, ZH (Li, Zhihong)

Source: RSC ADVANCES Volume: 3 Issue: 34 Pages: 14798-14806 DOI: 10.1039/c3ra41906a Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: The separation and concentration of blood components or biological functional microparticles, have become indispensable in various biomedical and environmental applications. In this paper, a chip with two rows of micropillar arrays along a spiral-channel, in which plasma and various blood cells with different sizes can be separated or enriched simultaneously, has been achieved. The proposed method combines crossflow, centrifugation and size-selective separation approaches. Specially, a 40 mm-high step, which can increase the pressure difference, is designed between the inner and middle channel to enhance the separation efficiency and purity. In the chip with split-level channels, the number of red blood cells (RBCs) gathered from the inner outlet decreased significantly, and the collected plasma volume increased, compared to those in the plain one.

Addresses: [Geng, Zhaoxin] Minzu Univ China, Sch Informat Engn, Beijing 100081, Peoples R China.

[Geng, Zhaoxin; Ju, Yanrui; Wang, Wei; Li, Zhihong] Peking Univ, Inst Microelect, Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China.

[Wang, Qifeng] Peking Univ, Coll Engn, Dept Mech & Aerosp Engn, Beijing 100871, Peoples R China.

[Geng, Zhaoxin] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Geng, ZX (reprint author), Minzu Univ China, Sch Informat Engn, Beijing 100081, Peoples R China.

E-mail Addresses: Gengsir@163.com

ISSN: 2046-2069
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Record 462 of 495

Title: Fabrication of Anti-reflecting Si Nano-structures with Low Aspect Ratio by Nano-sphere Lithography Technique

Author(s): Sun, SH (Sun, Shenghua); Lu, P (Lu, Peng); Xu, J (Xu, Jun); Xu, L (Xu, Ling); Chen, KJ (Chen, Kunji); Wang, QM (Wang, Qimin); Zuo, YH (Zuo, Yuhua)

Source: NANO-MICRO LETTERS Volume: 5 Issue: 1 Pages: 18-25 DOI: 10.3786/nml.v5i1.p18-25 Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Nano-structured photon management is currently an interesting topic since it can enhance the optical absorption and reduce the surface reflection which will improve the performance of many kinds of optoelectronic devices, such as Si-based solar cells and light emitting diodes. Here, we report the fabrication of periodically nano-patterned Si structures by using polystyrene nano-sphere lithography technique. By changing the diameter of nano-spheres and the dry etching parameters, such as etching time and etching power, the morphologies of formed Si nano-structures can be well controlled as revealed by atomic force microscopy. A good broadband antireflection property has been achieved for the formed periodically nano-patterned Si structures though they have the low aspect ratio (<0.53). The reflection can be significantly reduced compared with that of flat Si substrate in a wavelength range from 400 nm to 1200 nm. The weighted mean reflection under the AM1.5 solar spectrum irradiation can be as low as 3.92% and the corresponding optical absorption is significantly improved, which indicates that the present Si periodic nano-structures can be used in Si-based thin film solar cells.

Addresses: [Sun, Shenghua; Lu, Peng; Xu, Jun; Xu, Ling; Chen, Kunji] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China.

[Sun, Shenghua; Lu, Peng; Xu, Jun; Xu, Ling; Chen, Kunji] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China.

[Wang, Qimin; Zuo, Yuhua] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.

Reprint Address: Xu, J (reprint author), Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China.

E-mail Addresses: junxu@nju.edu.cn

ISSN: 2150-5551

Record 463 of 495

Title: Recent progress in organic-inorganic hybrid solar cells

Author(s): Fan, X (Fan, Xia); Zhang, ML (Zhang, Mingliang); Wang, XD (Wang, Xiaodong); Yang, FH (Yang, Fuhua); Meng, XM (Meng, Xiangmin)

Source: JOURNAL OF MATERIALS CHEMISTRY A Volume: 1 Issue: 31 Pages: 8694-8709 DOI: 10.1039/c3ta11200d Published: 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: Organic-inorganic hybrid solar cells were expected to adopt the advantages of both organic and inorganic materials. Due to several crucial problems, the power conversion efficiency of most hybrid solar cells was lower than 1%. Recent work reported the highest power conversion efficiency of a hybrid solar cell as 11.3%, which increased the research interest into organic-inorganic hybrid solar cells. This article focuses on the progress in state-of-the-art research on organic-inorganic hybrid solar cells and the associated key issues, including the energy band alignment of the organic and inorganic components, interface control of the heterojunction, and the use of ordered nanostructures were discussed. The challenges and prospects for organic-inorganic hybrid solar cells in the near future are discussed.

Addresses: [Fan, Xia] Beihang Univ, Key Lab Bioinspired Smart Interfacial Sci & Techn, Minist Educ, Sch Chem & Environm, Beijing 100191, Peoples R China.

[Zhang, Mingliang; Wang, Xiaodong; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.

[Zhang, Mingliang; Meng, Xiangmin] Chinese Acad Sci, Key Lab Photochem Convers & Optoelect Mat, Tech Inst Phys & Chem, Beijing 100190, Peoples R China.

Reprint Address: Fan, X (reprint author), Beihang Univ, Key Lab Bioinspired Smart Interfacial Sci & Techn, Minist Educ, Sch Chem & Environm, Beijing 100191, Peoples R China.

E-mail Addresses: xmmeng@mail.ipc.ac.cn

ISSN: 2050-7488

Record 464 of 495

Title: Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth

Author(s): Wen, JJ (Wen, J. J.); Liu, Z (Liu, Z.); Li, LL (Li, L. L.); Li, C (Li, C.); Xue, CL (Xue, C. L.); Zuo, YH (Zuo, Y. H.); Li, CB (Li, C. B.); Wang, QM (Wang, Q. M.); Cheng, BW (Cheng, B. W.)

Source: ECS SOLID STATE LETTERS Volume: 2 Issue: 9 Pages: P73-P75 DOI: 10.1149/2.005309ssl Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Ge-on-insulator film stacks were formed on Si (100) substrates by a rapid melt growth process at different soaking temperatures and cooling rates to investigate the orientation twist. The cooling rate was found to be the crucial parameter affecting the twist. With decreased cooling rate to 57.8 degrees C/s or lower, the twist along the strip was inhibited. The lattice rotation speed near the end of the Ge strip was slower than that of the forward part because of the less latent heat released toward the end of the strip. (c) 2013 The Electrochemical Society. All rights reserved.

Addresses: [Wen, J. J.; Liu, Z.; Li, L. L.; Li, C.; Xue, C. L.; Zuo, Y. H.; Li, C. B.; Wang, Q. M.; Cheng, B. W.] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

Reprint Address: Wen, JJ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.

E-mail Addresses: cbw@red.semi.ac.cn

ISSN: 2162-8742

Record 465 of 495

Title: Kinetic mechanism of ZnO hexagonal single crystal slices on GaN/sapphire by a layer-by-layer growth mode

Author(s): Jia, GZ (Jia, Guozhi); Lu, XC (Lu, Xucen); Hao, BX (Hao, Bingxue); Wang, XL (Wang, Xionglong); Li, YM (Li, Yumei); Yao, JH (Yao, Jianghong)

Source: RSC ADVANCES Volume: 3 Issue: 31 Pages: 12826-12830 DOI: 10.1039/c3ra23261a Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Hexagonal single crystal ZnO slices were prepared on a GaN/sapphire substrate by a chemical bath deposition method at low temperature. The ZnO slices were characterized by electron microscopy and photoluminescence spectroscopy. The nature of the kinetic mechanisms of the two-dimensional hexagonal ZnO slices' growth is explored. The formation of the slices involves several important processes: an ion adsorption competition mechanism, the forming of a nuclear center, diffusion of the nanoclusters and ripening of the ZnO cluster and a layer-by-layer growth process.

Addresses: [Jia, Guozhi] Tianjin Inst Urban Construct, Tianjin 300384, Peoples R China.

[Jia, Guozhi] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

[Lu, Xucen; Hao, Bingxue; Wang, Xionglong; Li, Yumei; Yao, Jianghong] Nankai Univ, Key Lab Weak Light Nonlinear Photon, Minist Educ, Sch Phys, Tianjin 300457, Peoples R China.

[Lu, Xucen; Hao, Bingxue; Wang, Xionglong; Li, Yumei; Yao, Jianghong] Nankai Univ, TEDA Appl Phys Sch, Tianjin 300457, Peoples R China.

Reprint Address: Jia, GZ (reprint author), Tianjin Inst Urban Construct, Tianjin 300384, Peoples R China.

E-mail Addresses: jiaguozhi@tjuci.edu.cn

ISSN: 2046-2069
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Record 466 of 495

Title: Fabrication of curled conducting polymer microfibrous arrays via a novel electrospinning method for stretchable strain sensors

Author(s): Sun, B (Sun, Bin); Long, YZ (Long, Yun-Ze); Liu, SL (Liu, Shu-Liang); Huang, YY (Huang, Yuan-Yuan); Ma, J (Ma, Jie); Zhang, HD (Zhang, Hong-Di); Shen, GZ (Shen, Guozhen); Xu, S (Xu, Sheng)

Source: NANOSCALE Volume: 5 Issue: 15 Pages: 7041-7045 DOI: 10.1039/c3nr01832f Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Stretchable strain sensors based on aligned microfibrous arrays of poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate)-poly(vinyl pyrrolidone) (PEDOT:PSS-PVP) with curled architectures have been fabricated by a novel reciprocating-type electrospinning setup with a spinneret in straightforward simple harmonic motion. The incorporation of PEDOT:PSS into PVP is confirmed by Raman spectra, which improves the room-temperature conductivity of the composite fibers (1.6 x 10(-5) S cm(-1)). Owing to the curled architectures of the as-spun fibrous polymer arrays, the sensors can be stretched reversibly with a linear elastic response to strain up to 4%, which is three times higher than that from electrospun nonwoven mats. In addition, the stretchable strain sensor with a high repeatability and durability has a gauge factor of about 360. These results may be helpful for the fabrication of stretchable devices which have potential applications in some fields such as soft robotics, elastic semiconductors, and elastic solar cells.

Addresses: [Sun, Bin; Long, Yun-Ze; Liu, Shu-Liang; Huang, Yuan-Yuan; Ma, Jie; Zhang, Hong-Di; Xu, Sheng] Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China.

[Sun, Bin] Qingdao Univ, Coll Chem Chem Engn & Environm, Qingdao 266071, Peoples R China.

[Long, Yun-Ze; Zhang, Hong-Di; Xu, Sheng] Qingdao Univ, Key Lab Photon Mat & Technol Univ Shandong, Qingdao 266071, Peoples R China.

[Long, Yun-Ze] Qingdao Univ, State Key Lab Cultivat Base New Fiber Mat & Moder, Qingdao 266071, Peoples R China.

[Shen, Guozhen] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Long, YZ (reprint author), Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China.

E-mail Addresses: yunze.long@163.com

ISSN: 2040-3364

Record 467 of 495

Title: Timing and Operating Mode Design for Time-Gated Fluorescence Lifetime Imaging Microscopy

Author(s): Liu, C (Liu, Chao); Wang, XW (Wang, Xinwei); Zhou, Y (Zhou, Yan); Liu, YL (Liu, Yuliang)

Source: SCIENTIFIC WORLD JOURNAL Article Number: DOI: 10.1155/2013/801901 Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: Steady-state fluorence imaging and time-resolved fluorescence imaging are two important areas in fluorescence imaging research. Fluorescence lifetime imaging is an absolute measurement method which is independent of excitation laser intensity, fluorophore concentration, and photobleaching compared to fluorescence intensity imaging techniques. Time-gated fluorescence lifetime imaging microscopy (FLIM) can provide high resolution and high imaging frame during mature FLIM methods. An abstract time-gated FLIM model was given, and important temporal parameters are shown as well. Aiming at different applications of steady and transient fluorescence processes, two different operation modes, timing and lifetime computing algorithm are designed. High resolution and high frame can be achieved by one-excitation one-sampling mode and least square algorithm for steady imaging applications. Correspondingly, one-excitation two-sampling mode and rapid lifetime determination algorithm contribute to transient fluorescence situations.

Addresses: [Liu, Chao; Wang, Xinwei; Zhou, Yan; Liu, Yuliang] Chinese Acad Sci, Inst Semiconductors, Optoelect Syst Lab, Beijing 100083, Peoples R China.

Reprint Address: Liu, C (reprint author), Chinese Acad Sci, Inst Semiconductors, Optoelect Syst Lab, Beijing 100083, Peoples R China.

E-mail Addresses: lcphs820@gmail.com

ISSN: 1537-744X

Record 468 of 495

Title: Enhanced Optical Property of InGaN Light-Emitting Diodes with SiO2 Nano-Bowl Photonic Crystal by Nanosphere Lithography

Author(s): Zheng, HY (Zheng, Haiyang); Wu, K (Wu, Kui)

Source: ECS SOLID STATE LETTERS Volume: 2 Issue: 7 Pages: Q51-Q53 DOI: 10.1149/2.001307ssl Published: 2013

Times Cited in Web of Science: 1

Total Times Cited: 1

Abstract: The InGaN-based light-emitting diodes (LEDs) incorporating SiO2 nano-bowl photonic crystal (SNPC) arrays with different periods onto the indium-tin oxide (ITO) layers have been fabricated using nano-sphere lithography (NSL). A monolayer of self-assembled nano-spheres has served as a hard mold for pattern transfer to the SiO2 layer, leaving the ITO layer intact and free of etching damages. The LEDs with SNPC arrays have exhibited enhancement of the light output power (LOP) by 42% and reduction of the emission divergence angle by 22.5 degrees compared with the conventional LEDs. Their optical performances and mechanisms have been investigated with finite-difference time-domain (FDTD) simulations. (C) 2013 The Electrochemical Society. [DOI: 10.1149/2.001307ssl] All rights reserved.

Addresses: [Zheng, Haiyang; Wu, Kui] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

[Wu, Kui] Tsinghua Univ, Dept Elect Engn, Tsinghua Natl Lab Informat Sci & Technol, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China.

Reprint Address: Zheng, HY (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.

E-mail Addresses: zhy168@semi.ac.cn

ISSN: 2162-8742
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Record 469 of 495

Title: Crystal growth of KPb2Cl5 by Bridgeman method with pressure control system

Author(s): Cheng, G (Cheng, Gang); Meng, XQ (Meng, Xiuqing); Shan, D (Shan, Dong)

Source: ZEITSCHRIFT FUR KRISTALLOGRAPHIE Volume: 228 Issue: 5 Pages: 228-231 DOI: 10.1524/zkri.2013.1554 Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: empty set 15 mm Single crystals of potassium lead chloride (KPb2Cl5) have been grown by a novel modified Bridgman method under protect of N-2 and CCl4 with a pressure control system. It could make vacuum or protect atmosphere according to the need of raw materials composition and crystals growth. So the process of preparation of crystal would be simplified. Measurements of the transmission of crystal in the mid-infrared were also made.

Addresses: [Cheng, Gang; Meng, Xiuqing; Shan, Dong] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Reprint Address: Cheng, G (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.

E-mail Addresses: chenggang@semi.ac.cn

ISSN: 0044-2968

Record 470 of 495

Title: Mechanisms in thermal stress aided electroless etching of GaN grown on sapphire and approaches to vertical devices

Author(s): Wang, LC (Wang, Liancheng); Liu, ZQ (Liu, Zhiqiang); Zheng, HY (Zheng, Haiyang); Zhang, YY (Zhang, Yiyun); Cheng, Y (Cheng, Yan); Xie, HZ (Xie, Haizhong); Rao, LQ (Rao, Liqiang); Wei, TB (Wei, Tongbo); Yang, H (Yang, Hua); Yuan, GD (Yuan, Guodong); Yi, XY (Yi, Xiaoyan); Wang, GH (Wang, Guohong)

Source: RSC ADVANCES Volume: 3 Issue: 27 Pages: 10934-10943 DOI: 10.1039/c3ra40794b Published: 2013

Times Cited in Web of Science: 0

Total Times Cited: 0

Abstract: A thermal stress aided electroless etching (TSEE) process of epitaxial GaN on sapphire has been demonstrated experimentally and theoretically. The sapphire has been successfully separated from the epitaxial GaN by electroless etching assisted by the thermal peeling stress at the GaN/sapphire interface. ANSYS simulation indicates a sharp increase in peeling stress at the edge of the chip. The mechanism of the TSEE process has been elucidated in macro-and micro-interpretation in this paper, which is based on a charge transfer reaction model with a thermodynamic cycle and an Arrhenius equation. The influences of etching temperature (ET) and etchant concentration (EC) on the TSEE process were quantitatively analyzed based on experimental results. X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) results show an improvement in the epitaxial GaN crystallinity with the TSEE process. Analysis of the mechanisms of the TSEE process will undoubtedly deepen our understanding of semiconductor etching and facilitate more potential applications.

Addresses: [Wang, Liancheng; Liu, Zhiqiang; Zhang, Yiyun; Cheng, Yan; Xie, Haizhong; Wei, Tongbo; Yang, Hua; Yuan, Guodong; Yi, Xiaoyan; Wang, Guohong] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.